Analysis and Design of Analog Integrated Circuits

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL...

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ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition

PAUL R. GRAY University of California, Berkeley

PAUL J. HURST University of California, Davis

STEPHEN H. LEWlS University of California, Davis

ROBERT G. MEYER University of California, Berkeley

JOHN WlLEY & SONS, INC. New York / Chichester / Weinheim /Brisbane /Singapore / Toronto

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Cover courtesy of Dr. Kenneth C. Dyer and Melgar Photography. This book was set in 10112 Times Roman by Publication Services, Inc. and printed and bound by Hamilton Printing Company. The cover was printed by Lehigh Press, Inc. This book was printed on acid-free paper. @ Copyright 2001 O John Wiley & Sons, Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system or transmitted in any form or by any means, electronic, mechanical, photocopying, recording, scanning or otherwise, except as permitted under Sections 107 or 108 of the 1976 United States Copyright Act, without either the prior written permission of the Publisher, or authorization through payment of the appropriate per-copy fee to the Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923, (978) 750-8400, fax (978) 750-4470. Requests to the Publisher for permission should be addressed to the Permissions Department, John Wiley & Sons, Inc., 605 Third Avenue, New York, NY 10158-0012, (212) 850-6011, fax (212) 850-6008, E-mail: [email protected]. To order books or for customer service please call 1-800-CALL-WILEY (255-5945).

Library of Congress Cataloging-in-PublicationData Analysis and design of analog integrated circuits l Paul R. Gray. . .[et al.]. - 4th ed. p. cm. lncludes bibliographical references and index. ISBN 0-471-32 168-0 (cloth: alk. paper) 1. Linear integrated circuits-Computer-aided design. 2. Metal oxide semiconductors-Computer-aided design. 3. Bipolar transistors-Computer-aided design. I. Gray, Paul R., 1942TK7874.A588 2000 621.38154~21 00-043583 Printed in the United States of America 10987654321

Preface In the 23 years since the publication of the first edition of this book, the field df analog integrated circuits has developed and matured. The initial groundwork was laid in bipolar technology, followed by a rapid evolution of MOS analog integrated circuits. Furthermore, BiCMOS technology (incorporating both bipolar and CMOS devices on one chip) has emerged as a serious contender to the original technologies. A key issue is that CMOS technologies have become dominant in building digital circuits because CMOS digital circuits are smaller and dissipate less power than their bipolar counterparts. To reduce system cost and power dissipation, analog and digital circuits are now often integrated together, providing a strong economic incentive to use CMOS-compatible analog circuits. As a result, an important question in many applications is whether to use pure CMOS or a BiCMOS technology. Although somewhat more expensive to fabricate, BiCMOS allows the designer to use both bipolar and MOS devices to their best advantage, and also allows innovative combinations of the characteristics of both devices. In addition, BiCMOS can reduce the design time by allowing direct use of many existing cells in realizing a given analog circuit function. On the other hand, the main advantage of pure CMOS is that it offers the lowest overall cost. Twenty years ago, CMOS technologies were only fast enough to support applications at audio frequencies. However, the continuing reduction of the minimum feature size in integrated-circuit (IC) technologies has greatly increased the maximum operating frequencies, and CMOS technologies have become fast enough for many new applications as a result. For example, the required bandwidth in video applications is about 4 MHz, requiring bipolar technologies as recently as 15 years ago. Now, however, CMOS can easily accommodate the required bandwidth for video and is even being used for radio-frequency applications. In this fourth edition, we have combined the consideration of MOS and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. We have written this edition so that instructors can easily select topics related to only CMOS circuits, only bipolar circuits, or a combination of both. We believe that it has become increasingly important for the analog circuit designer to have a thorough appreciation of the similarities and differences between MOS and bipolar devices, and to be able to design with either one where this is appropriate. Since the SPICE computer analysis program is now readily available to virtually all electrical engineering students and professionals, we have included extensive use of , SPICE in this edition, particularly as an integral part of many problems. We have used computer analysis as it is most commonly employed in the engineering design processboth as a more accurate check on hand calculations, and also as a tool to examine complex circuit behavior beyond the scope of hand analysis. In the problem sets, we have also included a number of open-ended design problems to expose the reader to real-world situations where a whole range of circuit solutions may be found to satisfy a given performance specification. This book is intended to be useful both as a text for students and as a reference book for practicing engineers. For class use, each chapter includes many worked problems; the problem sets at the end of each chapter illustrate the practical applications of the material in the text. All the authors have had extensive industrial experience in IC design as well vii

viii

Preface

as in the teaching of courses on this subject, and this experience is reflected in the choice of text material and in the problem sets. Although this book is concerned largely with the analysis and design of ICs, a considerable amount of material is also included on applications. In practice, these two subjects are closely linked, and a knowledge of both is essential for designers and users of ICs. The latter compose the larger group by far, and we believe that a working knowledge of IC design is a great advantage to an IC user. This is particularly apparent when the user mdst choose from among a number of competing designs to satisfy a particular need. An understanding of the IC structure is then useful in evaluating the relative desirability of the different designs under extremes of environment or in the presence of variations in supply voltage. In addition, the IC user is in a much better position to interpret a manufacturer's data if he or she has a working knowledge of the internal operation of the integrated circuit. The contents of this book stem largely from courses on analog integrated circuits given at the University of California at the Berkeley and Davis campuses. The courses are undergraduate electives and first-year graduate courses. The book is structured so that it can be used as the basic text for a sequence of such courses. The more advanced material is found at the end of each chapter or in an appendix so that a first course in analog integrated circuits can omit this material without loss of continuity. An outline of each chapter is given below together with suggestions for material to be covered in such a first course. It is assumed that the course consists of three hours of lecture per week over a 15-week semester and that the students have a working knowledge of Laplace transforms and frequency-domain circuit analysis. It is also assumed that the students have had an introductory course in electronics so that they are familiar with the principles of transistor operation and with the functioning of simple analog circuits. Unless otherwise stated, each chapter requires three to four lecture hours to cover. Chapter 1 contains a summary of bipolar transistor and MOS transistor device physics. We suggest spending one week on selected topics from this chapter, the choice of topics depending on the background of the students. The material of Chapters 1 and 2 is quite important in IC design because there is significant interaction between circuit and device design, as will be seen in later chapters. A thorough understanding of the influence of device fabrication on device characteristics is essential. Chapter 2 is concerned with the technology of IC fabrication and is largely descriptive. One lecture on this material should suffice if the students are assigned to read the chapter. Chapter 3 deals with the characteristics of elementary transistor connections. The material on one-transistor amplifiers should be a review for students at the senior and graduate levels and can be assigned as reading. The section on two-transistor amplifiers can be covered in about three hours, with greatest emphasis on differential pairs. The material on device mismatch effects in differential amplifiers can be covered to the extent that time allows. In Chapter 4, the important topics of current mirrors and active loads are considered. These configurations are basic building blocks in modern analog IC design, and this material should be covered in full, with the exception of the material on band-gap references and the material in the appendices. Chapter 5 is concerned with output stages and methods of delivering output power to a load. Integrated-circuit realizations of Class A, Class B, and Class AB output stages are described, as well as methods of output-stage protection. A selection of topics from this chapter should be covered. Chapter 6 deals with the design of operational amplifiers (op amps). Illustrative examples of dc and ac analysis in both MOS and bipolar op amps are performed in detail, and the limitations of the basic op amps are described. The design of op amps with improved

Preface

ix

characteristics in both MOS and bipolar technologies is considered. This key chapter on amplifier design requires at least six hours. In Chapter 7, the frequency response of amplifiers is considered. The zero-value timeconstant technique is introduced for the calculations of the -3-dB frequency of complex circuits. The material of this chapter should be considered in full. Chapter 8 describes the analysis of feedback circuits. Two different types of analysis are presented: two-port and return-ratio analyses. Either approach should be covered in full with the section on voltage regulators assigned as reading. Chapter 9 deals with the frequency response and stability of feedback circuits and should be covered up to the section on root locus. Time may not pennit a detailed discussion of root locus, but some introduction to this topic can be given. In a 15-week semester, coverage of the above material leaves about two weeks for Chapters 10, 11, and 12. A selection of topics from these chapters can be chosen as follows. Chapter 10 deals with nonlinear analog circuits, and portions of this chapter up to Section 10.3 could be covered in a first course. Chapter 11 is a comprehensive treatment of noise in integrated circuits, and material up to and including Section 11.4 is suitable. Chapter 12 describes fully differential operational amplifiers and common-mode feedback and may be best suited for a second course. We are grateful to the following colleagues for their suggestions for andor evaluation of this edition: R. Jacob Baker, Bemhard E. Boser, A. Paul Brokaw, John N. Churchill, David W. Cline, Ozan E. Erdogan, John W. Fattaruso, Weinan Gao, Edwin W. Greeneich, Alex Gros-Balthazard, Tiinde Gyurics, Ward J. Helms, Timothy H. Hu, Shafiq M. Jamal, John P. Keane, Haideh Khorramabadi, Pak-Kim Lau, Thomas W. Matthews, Krishnaswamy Nagaraj, Khalil Najafi, Borivoje NikoliC, Robert A. Pease, Lawrence T. Pileggi, Edgar Shnchez-Sinencio, Bang-Sup Song, Richard R. Spencer, Eric J. Swanson, Andrew Y. J. Szeto, Yannis P. Tsividis, Srikanth Vaidianathan, T. R. Viswanathan, ChomgKuang Wang, and Dong Wang. We are also grateful to Kenneth C. Dyer for allowing us to use on the cover of this book a die photograph of an integrated circuit he designed and to Zoe Marlowe for her assistance with word processing. Finally, we would like to thank the people at Wiley and Publication Services for their efforts in producing this fourth edition. The material in this book has been greatly influenced by our association with Donald 0. Pederson, and we acknowledge his contributions.

Berkeley and Davis, CA, 2001

Paul R. Gray Paul J. Hurst Stephen H. Lewis Robert G. Meyer

Contents . 1S.2

Comparison of Operating Regions of Bipolar and MOS Transistors 45 1S.3 Decomposition of Gate-Source Voltage 47 1.5.4 Threshold Temperature Dependence 47 1.5.5 MOS Device Voltage Limitations 48

CHAPTER l

Models for Integrated-Circuit Active Devices 1

Introduction 1 Depletion Region of a pn Junction 1 1.2.1 Depletion-Region Capacitance 5 1.2.2

JunctionBreakdown 6

Large-Signal Behavior of Bipolar Transistors 8

Small-Signal Models of the MOS \/Transistors 49

1.6

1.3.1 Large-Signal Models in the Forward-Active Region 9 1.3.2 Effects of Collector Voltage on Large-Signal Characteristics in the Forward-Active Region 14 1.3.3 Saturation and Inverse Active Regions 16 1.3.4 Transistor Breakdown Voltages 20 1.3.5 Dependence of Transistor Current Gain PF on Operating Conditions 23

Small-Signal Models of Bipolar Transistors 26

1.6.1 Transconductance 50 1.6.2 Intrinsic Gate-Source and Gate-Drain Capacitance 51

Base-Charging Capacitance 28

1.4.3

Input Resistance 29

1.7

Large Signal Behavior of Metal-Oxide-Semiconductor Field-Effect Transistors 38 1.5.1 Transfer Characteristics of MOS Devices 38

1.6.4 1.6.5

Output Resistance 52 Basic Small-Signal Model of the MOS Transistor 52

Short-Channel Effects in MOS Transistors 58 1.7.1 Velocity Saturation from the Horizontal Field 59 1.7.2 Transconductance and Transition Frequency 63 1.7.3 Mobility Degradation from the Vertical Field 65

1.4.4 Output Resistance 29 1.4.5 Basic Small-Signal Model of the Bipolar Transistor 30

1.4.6 Collector-Base Resistance 30 1.4.7 Parasitic Elements in the Small-Signal Model 3 1 1A.8 Specification of Transistor Frequency Response 34

InputResistance 52

1.6.6 Body Transconductance 53 1.6.7 Parasitic Elements in the Small-Signal Model 54 1.6.8 MOS Transistor Frequency Response 55

1.4.1 Transconductance 27 1.4.2

1.6.3

1.8

Weak Inversion in MOS Transistors 65 1.S. 1 Drain Current in Weak Inversion 66 1.8.2 Transconductance and Transition Frequency in Weak Inversion 68

Substrate Current Flow in MOS Transistors 7 1 A. 1.1 Summary of Active-Device

1.9

Contents xi CHAPTER 2

2.9.1 n-Channel Transistors

Bipolar, MOS, and BiCMOS Integrated-Circuit Technology 78

131

2.9.2 p-Channel Transistors 141 2.9.3 Depletion Devices

Introduction 78 Basic Processes in Integrated-Circuit Fabrication 79 Electrical Resistivity of Silicon 79

142

2.9.4 Bipolar Transistors 142 Passive Components in MOS Technology 144

Photolithography 84

2.10.1 Resistors 144 2.10.2 Capacitors in MOS Technology 145 2.10.3 Latchup in CMOS Technology 148

Epitaxial Growth 85

BiCMOS Technology

Ion Implantation 87

Heterojunction Bipolar Transistors 152

Solid-state Diffusion 80 Electrical Properties of Diffused Layers 82

Local Oxidation 87

Interconnect Delay

Polysilicon Deposition 87

150

153

Economics of Integrated-Circuit Fabrication 154

High-Voltage Bipolar Integrated-Circuit Fabrication 88

2.14.1 Yield Considerations in Integrated-Circuit Fabrication 154 2.14.2 Cost Considerations in Integrated-Circuit Fabrication 157 Packaging Considerations for Integrated Circuits 159

Advanced Bipolar Integrated-Circuit Fabrication 92 Active Devices in Bipolar Analog Integrated Circuits 95 2.5.1 Integrated-Circuit npn Transistor 96 2.5.2 Integrated-Circuit pnp Transistors 107 Passive Components in Bipolar Integrated Circuits 115

2.15.1 Maximum Power Dissipation 159 2.15.2 Reliability Considerations in Integrated-Circuit Packaging 162

2.6.1 Diffused Resistors 115 2.6.2 Epitaxial and Epitaxial Pinch Resistors 119

A.2.1 SPICE Model-Parameter Files

2.6.3 Integrated-Circuit Capacitors 120

CHAPTER 3

2.6.4 Zener Diodes 121

163

Single-Transistor and Multiple-Transistor Amplifiers 170

2.6.5 Junction Diodes 122 Modifications to the Basic Bipolar Process 123

3.1

Device Model Selection for Approximate Analysis of Analog Circuits 171

2.7.1 Dielectric Isolation 123 2.7.2 Compatible Processing for High-Performance Active Devices 124 2.7.3 High-Performance Passive Components 127

3.2 3.3

Two-Port Modeling of Amplifiers

MOS Integrated-Circuit Fabrication 127 Active Devices in MOS Integrated Circuits 131

172

Basic Single-Transistor Amplifier Stages 174 3.3.1 Common-Emitter Configuration 175 3.3.2 Common-Source Configuration 179 3.3.3 Common-Baseconfiguration 183 3.3.4 Common-Gate Configuration 186

xii

3.4

Contents

3.3.5 Common-Base and Common-Gate Configurations with Finite r, 188 3.3.5.1 Common-Base and Common-Gate Input Resistance 188 3.3.5.2 Common-Base and Common-Gate Output Resistance 190 3.3.6 Common-Collector Configuration (Emitter Follower) 191 3.3.7 Common-Drain Configuration (Source Follower) 195 3.3.8 Common-Emitter Amplifier with Emitter Degeneration 197 3.3.9 Common-Source Amplifier with Source Degeneration 200 Multiple-Transistor Amplifier Stages

3.5.6.5 Input Offset Current of the Emitter-Coupled Pair 235 3.5.6.6 Input Offset Voltage of the Source-Coupled Pair 236 3.5.6.7 Offset Voltage of the Source-Coupled Pair: Approximate Analysis 236 3.5.6.8 Offset Voltage Drift in the Source-Coupled Pair 238 3.5.6.9 Small-Signal Characteristics of Unbalanced Differential Amplifiers 238 A.3.1 Elementary Statistics and the Gaussian Distribution 246 CHAPTER 4

The CC-CE, CC-CC, and Darlington Configurations 202 The Cascode Configuration 206

Introduction

3.4.2.1 The Bipolar Cascode 206

Current Mirrors 253

3.4.2.2 The MOS Cascode 208

4.2.1 General Properties 253

The Active Cascode 211

4.2.2 Simple Current Mirror 255 4.2.2.1 Bipolar 255

The Super Source Follower 213

3.5

Current Mirrors, Active Loads, and References 253

Differential Pairs 215 The dc Transfer Characteristic of an Emitter-Coupled Pair 2 15 The dc Transfer Characteristic with Emitter Degeneration 2 17 The dc Transfer Characteristic of a Source-CoupledPair 2 18 Introduction to the Small-Signal Analysis of Differential Amplifiers 22 1 Small-Signal Characteristics of Balanced Differential Amplifiers 224 Device Mismatch Effects in Differential Amplifiers 23 1 Input Offset Voltage and Current 23 1 Input Offset Voltage of the Emitter-Coupled Pair 232 Offset Voltage of the Emitter-Coupled Pair: Approximate Analysis 232 Offset Voltage Drift in the Emitter-Coupled Pair 234

4.2.3

253

4.2.2.2 MOS 257 Simple Current Mirror with Beta Helper 260 4.2.3.1 Bipolar 260

4.2.4

4.2.3.2 MOS 262 Simple Current Mirror with Degeneration 262 4.2.4.1 Bipolar 262 4.2.4.2 MOS 263

4.2.5

Cascode Current Mirror 263 4.2.5.1 Bipolar 263 4.2.5.2 MOS 266

4.2.6 Wilson Current Mirror 274 4.2.6.1 Bipolar 274 4.2.6.2 MOS 277 Active Loads 278 4.3.1 Motivation 278 4.3.2 Common-EmitterlCommon-Source Amplifier with Complementary Load 279 4.3.3 Common-EmitterlCommon-Source Amplifier with Depletion Load 282

Contents

4.3.4 Common-Emitter/Common-Source

5.2

Amplifier with Diode-Connected Load 284 4.3.5 Differential Pair with Current-Mirror Load 287 4.3.5.1 Large-Signal Analysis

4.4

Voltage and Current References 299 4.4.1 Low-Current Biasing 299 4.4.1.1 Bipolar Widlar Current Source 299 4.4.1.2 MOS Widlar Current Source 302 4.4.1.3 Bipolar Peaking Current Source 303 4.4.1.4 MOS Peaking Current Source 304 4.4.2

Power Output and Efficiency 347 Emitter-Follower Drive Requirements 354 5.2.4 Small-Signal Properties of the Emitter Follower 355

5.3

The Source Follower As an Output Stage 356 5.3.1 5.3.2

Transfer Characteristics of the Source Follower 356 Distortion in the Source Follower 358

5.4

Class B Push-Pull Output Stage 362 5.4.1 Transfer Characteristic of the Class B Stage 363 5.4.2 Power Output and Efficiency of the Class B Stage 365 5.4.3 Practical Realizations of Class B

306 4.4.2.2 Current Sources Using

Complementary Output Stages 369

Other Voltage Standards

5.4.4

307 4.4.3

Transfer Characteristics of the Emitter-Follower 344

5.2.2 5.2.3

Supply-Insensitive Biasing 306 4.4.2.1 Widlar Current Sources

4.4.2.3 Self Biasing

The Emitter Follower As an Output Stage 344 5.2.1

287 4.3.5.2 Small-Signal Analysis 288 4.3.5.3 Common-Mode Rejection Ratio 293

xiii

All-npn Class B Output Stage 376

309

5.4.5

Quasi-Complementary Output Stages 379

5A.6

Overload Protection 380

Temperature-Insensitive Biasing 317 4.4.3.1 Band-Gap-Referenced

Bias Circuits in Bipolar Technology 3 17 4.4.3.2 Band-Gap-Referenced Bias Circuits in CMOS Technology 323

A.4.1 Matching Considerations in Current Mirrors 327 A.4.1.1 Bipolar 327 A.4.1.2 MOS 329

5.5

CMOS Class AB Output Stages 382 5 S. 1 Common-Drain Configuration 383 5S.2 Common-Source Configuration with Error Amplifiers 384 5.5.3

A.4.2 Input Offset Voltage of Differential Pair with Active Load 332 A.4.2.1 Bipolar 332 A.4.2.2 MOS 334

Alternative Configurations 391 5.5.3.1 Combined Common-Drain Common-Source Configuration 39 1 5.5.3.2 Combined Common-Drain Common-Source Configuration with High Swing 393 5S.3.3 Parallel Common-Source Configuration 394

CHAPTER 6 CHAPTER 5

Output Stages 344 5.1 Introduction 344

Operational Amplifiers with Single-Ended Outputs 404 6.1 Applications of Operational Amplifiers 405

xiv Contents 6.1.1 Basic Feedback Concepts 405 6.1.2 Inverting Amplifier 406 6.1.3 Noninverting Amplifier 408 6.1.4 Differential Amplifier 408

6.6 6.7 6.8

6.1.5 Nonlinear Analog Operations 409

6.8.1 The dc Analysis of the 741 Operational Amplifier 456 6.8.2 Small-Signal Analysis of the 741 Operational Amplifier 461 6.8.3 Input Offset Voltage, Input Offset Current, and Cornmon-Mode Rejection Ratio of the 741 470

6.1.6 Integrator, Differentiator 4 10 6.1.7 Internal Amplifiers 41 1 6.1.7.1 Switched-Capacitor Amplifier 411 6.1.7.2 Switched-Capacitor Integrator 416

Deviations from Ideality in Real Operational Amplifiers 419

6.2

6.9

Design Considerations for Bipolar Monolithic Operational Amplifiers

6.2.1 Input Bias Current 419

472

6.2.2 Input Offset Current 420

6.9.1 Design of Low-Drift Operational Amplifiers 474 6.9.2 Design of Low-Input-Current Operational Amplifiers 476

6.2.3 Input Offset Voltage 421 /

-,/6.2.4 Common-Mode Input Range 421 $.2.5 Common-Mode Rejection Ratio / (CMRR) 421 / $2.6 Power-Supply Rejection Ratio L/ (PSRR) 422 6.2.7 Input Resistance 424 6.2.8 Output Resistance 424

I

MOS Folded-Cascode Operational Amplifiers 446 MOS Active-Cascode Operational Amplifiers 450 Bipolar Operational Amplifiers 453

'

6.2.9 Frequency Response 424 6.2.10 Operational-Amplifier Equivalent Circuit 424

Basic Two-Stage MOS Operational Amplifiers 425 6.3.1 Input Resistance, Output Resistance, and Open-Circuit Voltage Gain 426 6.3.2 Output Swing 428 6.3.3 Input Offset Voltage 428 6.3.4 Common-Mode Rejection Ratio 1 431 6.3.5 Common-Mode Input Range 432 6.3.6 Power-Supply Rejection Ratio (PSRR) 434 6.3.7 Effect of Overdrive Voltages 439 6.3.8 Layout Considerations 439

Two-Stage MOS Operational Amplifiers with Cascodes 442 MOS Telescopic-Cascode Operational Amplifiers 444

CHAPTER 7

Frequency Response of Integrated Circuits 488 7.1 Introduction 488 7.2 Single-Stage Amplifiers 488 7.2.1 Single-Stage Voltage Amplifiers and The Miller Effect 488 7.2.1.1 The Bipolar Differential Amplifier: DifferentialMode Gain 493 7.2.1.2 The MOS Differential Amplifier: DifferentialMode Gain 496 7.2.2 Frequency Response of the Cornrnon-Mode Gain for a Differential Amplifier 499 7.2.3 Frequency Response of Voltage Buffers 502 7.2.3.1 Frequency Response of the Emitter Follower 503 7.2.3.2 Frequency Response of the Source Follower 509 7.2.4 Frequency Response of Current Buffers 511 7.2.4.1 Common-Base-Amplifier Frequency Response 5 14 7.2.4.2 Common-Gate-Amplifier Frequency Response 5 15

Contents

7.3

Multistage Amplifier Frequency Response 516 Dominant-Pole Approximation 5l 6 Zero-Value Time Constant Analysis 517 Cascode Voltage-Amplifier Frequency Response 522 Cascode Frequency Response 525 Frequency Response of a Current Mirror Loading a Differential Pair 532 Short-circuit Time Constants 533

7.4

Analysis of the Frequency Response of the 741 Op Amp 537 7.4.1 High-Frequency Equivalent Circuit of the741 537 7.4.2 Calculation of the -3-dB Frequency of the 741 538 7.4.3 Nondominant Poles of the 741 540

7.5

Relation Between Frequency Response and Time Response 542

xv

8.6.2 Local Shunt Feedback 591

The Voltage Regulator as a Feedback Circuit 593 Feedback Circuit Analysis Using Return Ratio 599 8.8.1 Closed-Loop Gain Using Return Ratio 601 8.8.2 Closed-Loop Impedance Formula Using Return Ratio 607 8.8.3 Summary-Return-Ratio Analysis 612

Modeling Input and Output Ports in Feedback Circuits 6 13 CHAPTER 9

Frequency Response and Stability of Feedback Amplifiers 624 Introduction 624 Relation Between Gain and Bandwidth in Feedback Amplifiers 624

Instability and the Nyquist Criterion 626

CHAPTER 8

Feedback 553 Ideal Feedback Equation 553 Gain Sensitivity 555 Effect of Negative Feedback on Distortion 555 Feedback Configurations 557

Compensation 633 9.4.1 Theory of Compensation 633 9.4.2 Methods of Compensation 637 9.4.3 Two-Stage MOS Amplifier Compensation 644 9.4.4 Compensation of Single-Stage CMOS OP Amps 652

8.4.1 Series-Shunt Feedback 557

9.4.5 Nested Miller Compensation 656

8.4.2 Shunt-Shunt Feedback 560

Root-Locus Techniques 664

8.4.3 Shunt-Series Feedback 561

9.5.1 Root Locus for a Three-Pole Transfer Function 664 9.5.2 Rules for Root-Locus Construction 667 9.5.3 Root Locus for Dominant-Pole Compensation 675 9.5.4 Root Locus for Feedback-Zero Compensation 676

8.4.4 Series-Series Feedback 562

Practical Configurations and the Effect of Loading 563 8.5.1 Shunt-Shunt Feedback 563 8.5.2 Series-Series Feedback 569 8.5.3 Series-Shunt Feedback 579 8.5.4 Shunt-Series Feedback 583 8.5.5 Summary 587

Single-Stage Feedback 587 8.6.1 Local Series Feedback 587

Slew Rate 680 9.6.1 Origin of Slew-Rate Limitations 680 9.6.2 Methods of Improving Slew-Rate 684

xvi Contents 9.6.3 Improving Slew-Rate in Bipolar Op Amps 685 9.6.4 Improving Slew-Rate in MOS Op Amps 686 9.6.5 Effect of Slew-Rate Limitations on Large-Signal Sinusoidal Performance 690

A.9.1 Analysis in Terms of Return-Ratio Parameters 69 1 A.9.2 Roots of a Quadratic Equation 692

11.2.1 Shot Noise 748 11.2.2 Thermal Noise 752 11.2.3 Flicker Noise (11f Noise) 753 11.2.4 Burst Noise (Popcorn Noise) 754 11.2.5 Avalanche Noise 755

11.3 Noise Models of Integrated-Circuit Components 756 11.3.1 Junction Diode 756 11.3.2 Bipolar Transistor 757 11.3.3 MOS Transistor 758

CHAPTER 10

Nonlinear Analog Circuits 702 10.1 Introduction 702 10.2 Precision Rectification 702 10.3 Analog Multipliers Employing the Bipolar Transistor 708 10.3.1 The Emitter-Coupled Pair as a Simple Multiplier 708 10.3.2 The dc Analysis of the Gilbert Multiplier Cell 7 10 10.3.3 The Gilbert Cell as an Analog Multiplier 7 12 10.3.4 A Complete Analog Multiplier 715 10.3.5 The Gilbert Multiplier Cell as a Balanced Modulator and Phase Dectector 7 l 6

10.4 Phase-Locked Loops (PLL) 720 10.4.1 Phase-Locked Loop Concepts 720 10.4.2 The Phase-Locked Loop in the Locked Condition 722 10.4.3 Integrated-Circuit Phase-Locked Loops 731 10.4.4 Analysis of the 560B Monolithic Phase-Locked Loop 735

10.5 Nonlinear Function Symbols 743 CHAPTER 1 1

Noise in Integrated Circuits 748 11.1 Introduction 748 11.2 Sources of Noise 748

11.3.4 Resistors 759 11.3.5 Capacitors and Inductors 759

11.4 Circuit Noise Calculations 760 11-4.1 Bipolar Transistor Noise Performance 762 11.4.2 Equivalent Input Noise and the Minimum Detectable Signal 766

11.S Equivalent Input Noise Generators 768 11S.1 Bipolar Transistor Noise Generators 768 11.5.2 MOS Transistor Noise Generators 773

11.6 Effect of Feedback on Noise Performance 776 11.6.1 Effect of Ideal Feedback on Noise Performance 776 11.6.2 Effect of Practical Feedback on Noise Performance 776

11.7 Noise Performance of Other Transistor Configurations 7 83 11.7.1 Common-Base Stage Noise Performance 783 11.7.2 Emitter-Follower Noise Performance 784 11.7.3 Differential-Pair Noise Performance 785

11.8 Noise in Operational Amplifiers 788 11.9 Noise Bandwidth 794 11.10 Noise Figure and Noise Temperature 799 11.10.1 Noise Figure 799 11.10.2 Noise Temperature 802

Contents

xvii

Fully DifferentialOperational Amplifiers

12.5.3 CMFB Using Transistors in the Triode Region 830

808

12.5.4 Switched-CapacitorCMFB 832

CHAPTER 12

12.1 Introduction 808 12.2 Properties of Fully Differential Amplifiers 808 12.3 Small-Signal Models for Balanced Differential Amplifiers 811 12.4 Common-Mode Feedback 8 l 6 12.4.1 Common-Mode Feedback at Low Frequencies 8 17 12.4.2 Stability and Compensation Considerations in a CMFB Loop 822

12.6 Fully Differential Op Amps 835 12.6.1 A Fully Differential Two-Stage Op Amp 835 12.6.2 Fully Differential Telescopic Cascode Op Amp 845 12.6.3 Fully Differential Folded-Cascode Op Amp 846 12.6.4 A Differential Op Amp with Two Differential Input Stages 847 12.6.5 Neutralization 849

12.7. Unbalanced Fully Differential Circuits 850

12.5 CMFB Circuits 823 12.5.1 CMFB Using Resistive Divider and Amplifier 824 12.5.2 CMFB Using Two Differential Pairs 828

12.8 Bandwidth of the CMFB Loop 856 Index

865

xviii Symbol Convention

Symbol Convention Unless otherwise stated, the following symbol convention is used in this book. Bias or dc quantities, such as transistor collector current Ic and collector-emitter voltage V C Eare , represented by uppercase symbols with uppercase subscripts. Small-signal quantities, such as the incremental change in transistor collector current i,, are represented by lowercase symbols with lowercase subscripts. Elements such as transconductance g, in small-signal equivalent circuits are represented in the same way. Finally, quantities such as total collector current I,, which represent the sum of the bias quantity and the signal quantity, are represented by an uppercase symbol with a lowercase subscript.

Modeisfor Integrated-Circuit Active Devices 1.1 Introduction The analysis and design of integrated circuits depend heavily on the utilization of suitable models for integrated-circuit components. This is true in hand analysis, where fairly simple models are generally used, and in computer analysis, where more complex models are encountered. Since any analysis is only as accurate as the model used, it is essential that the circuit designer have a thorough understanding of the origin of the models commonly utilized and the degree of approximation involved in each. This chapter deals with the derivation of large-signal and small-signal models for integrated-circuit devices. The treatment begins with a consideration of the properties of pn junctions, which are basic parts of most integrated-circuit elements. Since this book is primarily concerned with circuit analysis and design, no attempt has been made to produce a comprehensive treatment of semiconductor physics. The emphasis is on summarizing the basic aspects of semiconductor-device behavior and indicating how these can be modeled by equivalent circuits.

1.2 Depletion Region of a pn Junction The properties of reverse-biased pn junctions have an important influence on the characteristics of many integrated-circuit components. For example, reverse-biased p n junctions exist between many integrated-circuit elements and the underlying substrate, and these junctions all contribute voltage-dependent parasitic capacitances. In addition, a number of important characteristics of active devices, such as breakdown voltage and output resistance, depend directly on the properties of the depletion region of a reverse-biased pn junction. Finally, the basic operation of the junction field-effect transistor is controlled by the width of the depletion region of a p n junction. Because of its importance and application to many different problems, an analysis of the depletion region of a reverse-biased p n junction is considered below. The properties of forward-biased pn junctions are treated in Section 1.3 when bipolar-transistor operation is described. Consider a pn junction under reverse bias as shown in Fig. 1.1. Assume constant doping densities of ND atoms/cm3 in the n-type material and NA atoms/cm3 in the ptype material. (The characteristics of junctions with nonconstant doping densities will be described later.) Due to the difference in carrier concentrations in the p-type and n-type regions, there exists a region at the junction where the mobile holes and electrons have been removed, leaving the fixed acceptor and donor ions. Each acceptor atom carries a negative charge and each donor atom carries a positive charge, so that the region near the junction is one of significant space charge and resulting high electric field. This is called

2

Chapter 1

Models for Integrated-Circuit Active Devices

++'

VR

Charge density p

t

Applied external reverse bias

),(

--------Distance

-------------I

l

Electric jeld f

l

I

8!

!

I

Potential 4

I

Figure l . l The abrupt junction under reverse bias VR.( a ) Schematic. (b)Charge density. (C) Electric field. (d) Electrostatic potential.

the depletion region or space-charge region. It is assumed that the edges of the depletion region are sharply defined as shown in Fig. 1.1, and this is a good approximation in most cases. For zero applied bias, there exists a voltage $0 across the junction called the built-in potential. This potential opposes the diffusion of mobile holes and electrons across the junction in equilibrium and has a value1

where VT

=

kT

- -- 26 mV at 300•‹K 4

the quantity ni is the intrinsic carrier concentration in a pure sample of the semiconductor and ni = 1.5 X 1010cm-3 at 300•‹Kfor silicon. In Fig. 1.1 the built-in potential is augmented by the applied reverse bias, VR, and the total voltage across the junction is ($0 V R ) .If the depletion region penetrates a distance W , into the p-type region and Wz into the n-type region, then we require

+

because the total charge per unit area on either side of the junction must be equal in magnitude but opposite in sign.

1.2 Depletion Region of a pn Junction

3

Poisson's equation in one dimension requires that d2v - = - W -p - - q N ~ for - w1 < x < o dx2 E E where p is the charge density, q is the electron charge (1.6 X 10-l9 coulomb), and E is the permittivity of the silicon (1.04 X 10-l2 faradkm). The permittivity is often expressed as

where Ks is the dielectric constant of silicon and E O is the permittivity of free space (8.86 X l o w 4 Flcm). Integration of (1.3) gives

where Cl is a constant. However, the electric field % is given by

Since there is zero electric field outside the depletion region, a boundary condition is .

% =0

for

X =

-W1

and use of this condition in (1.6) gives dV for - W1 < x < O W1) = -dx Thus the dipole of charge existing at the junction gives rise to an electric field that varies linearly with distance. Integration of (1.7) gives @'A % = --(X+ E

If the zero for potential is arbitrarily taken to be the potential of the neutral p-type region, then a second boundary condition is V

=

0

for

X =

-W1

and use of this in (1.8) gives

At X

=

0, we define V

=

V1, and then (1.9) gives

If the potential difference from X

=

0 to X = W2 is V2, then it follows that

and thus the total voltage across the junction is

1

4 Chapter 1

Models for Integrated-CircuitActive Devices

Substitution of (1.2) in (1.12) gives

From (1.13), the penetration of the depletion layer into the p-type region is

Similarly

Equations 1.14 and 1.15 show that the depletion regions extend into the p-type and n-type regions in inverse relation to the impurity concentrations and in proportion to If either No or N A is much larger than the other, the depletion region exists almost entirely in the lightly doped region.

Jm.

rn

EXAMPLE

An abrupt pn junction in silicon has doping densities N A = 1015 atoms/cm3 and ND = 1016 atoms/cm3. Calculate the junction built-in potential, the depletion-layer depths, and the maximum field with 10 V reverse bias. From (1.1)

From (1.14) the depletion-layer depth in the p-type region is

=

3.5 p m (where 1 p m = 1 micrometer = 1 0 - ~m)

The depletion-layer depth in the more heavily doped n-type region is

Finally, from ( l .7) the maximum field that occurs for X

rn

Note the large magnitude of this electric field.

=

0 is


5

1.2.1 Depletion-RegionCapacitance Since there is a voltage-dependent charge Q associated with the depletion region, we can calculate a small-signal capacitance C, as follows:

Now

where A is the cross-sectional area of the junction. Differentiation of (1.14) gives

Use of (1.17) and ( l . 18) in (1.16) gives

The above equation was derived for the case of reverse bias VR applied to the diode. However, it is valid for positive bias voltages as long as the forward current flow is small. Thus, if VD represents the bias on the junction (positive for forward bias, negative for reverse bias), then (1.19) can be written as

where Cjo is the value of C j for VD = 0. Equations 1.20 and 1.21 were derived using the assumption of constant doping in the p-type and n-type regions. However, many practical diffused junctions more closely approach a graded doping profile as shown in Fig. 1.2. In this case a similar calculation yields

Note that both (1.21) and (1.22) predict values of Cj approaching infinity as VD approaches $0. However, the current flow in the diode is then appreciable and the equations no longer valid. A more exact analysis2v3of the behavior of Cj as a function of VD gives the result shown in Fig. 1.3. For forward bias voltages up to about $012, the values of C j predicted by (1.21) are very close to the more accurate value. As an approximation, some computer programs approximate Cj for VD > $012 by a linear extrapolation of (1.21) or (1.22).

1

6 Chapter 1

Models for Integrated-Circuit Active Devices Charge density p

Figure 1.2 Charge density versus dis-

tance in a graded junction.

--. More accurate calculation

1

Reverse bias

Foward bias

Figure 1.3 Behavior of p n junction depletion-layer capacitance C j as a function of bias voltage V D .

W

EXAMPLE = 0.5 V, calculate the If the zero-bias capacitance of a diffused junction is 3 pF and capacitance with 10 V reverse bias. Assume the doping profile can be approximated by an abrupt junction. From (1.21) 2

1.2.2 Junction Breakdown From Fig. l . lc it can be seen that the maximum electric field in the depletion region occurs at the junction, and for an abrupt junction (1.7) yields a value qN'4 w1 Zmax = -E

(1.23)



I-

max -

7

[ ~ ~ N A N D 1V"' R E

(NA + No)

where $o has been neglected. Equation 1.24 shows that the maximum field increases as the doping density increases and the reverse bias increases. Although useful for indicaton other variables, this equation is strictly valid ing the functional dependence of %,, for an ideal plane junction only. Practical junctions tend to have edge effects that cause somewhat higher values of g,,, due to a concentration of the field at the curved edges of the junction. Any reverse-biased pn junction has a small reverse current flow due to the presence of minority-carrier holes and electrons in the vicinity of the depletion region. These are swept across the depletion region by the field and contribute to the leakage current of the junction. As the reverse bias on the junction is increased, the maximum field increases and the carriers acquire increasing amounts of energy between lattice collisions in the depletion region. At a critical field %,., the carriers traversing the depletion region acquire sufficient energy to create new hole-electron pairs in collisions with silicon atoms. This is called the avalanche process and leads to a sudden increase in the reverse-bias leakage current since ,, is the newly created carriers are also capable of producing avalanche. The value of ,% about 3 X 105V/cm for junction doping densities in the range of 1015 to 1016 atoms/cm3, but it increases slowly as the doping density increases and reaches about 106 V/cm for doping densities of 1018 atoms/cm3. A typical I-V characteristic for a junction diode is shown in Fig. 1.4, and the effect of avalanche breakdown is seen by the large increase in reverse current, which occurs as the reverse bias approaches the breakdown voltage BV. This corresponds to the maximum field %,, approaching %,",. It has been found empirically4 that if the normal reverse bias current of the diode is IR with no avalanche effect, then the actual reverse current near the breakdown voltage is

Figure 1.4 Typical I-V characteristic of a junction diode showing avalanche breakdown.

8

Chapter 1


where M is the multiplication factor defined by

In this equation, V R is the reverse bias on the diode and n has a value between 3 and 6. The operation of a pn junction in the breakdown region is not inherently destructive. However, the avalanche current flow must be limited by external resistors in order to prevent excessive power dissipation from occurring at the junction and causing damage to the device. Diodes operated in the avalanche region are widely used as voltage references and are called Zener diodes. There is another, related process called Zener is different from the avalanche breakdown described above. Zener b r e a k d o ~ nwhich ,~ breakdown occurs only in very heavily doped junctions where the electric field becomes large enough (even with small reverse-bias voltages) to strip electrons away from the valence bonds. This process is called tunneling, and there is no multiplication effect as in avalanche breakdown. Although the Zener breakdown mechanism is important only for breakdown voltages below about 6 V, all breakdown diodes are commonly referred to as Zener diodes. The calculations so far have been concerned with the breakdown characteristic of plane abrupt junctions. Practical diffused junctions differ in some respects from these results and the characteristics of these junctions have been calculated and tabulated for use by designer^.^ In particular, edge effects in practical diffused junctions can result in breakdown voltages as much as 50 percent below the value calculated for a plane junction. EXAMPLE An abrupt plane pn junction has doping densities NA = 5 X 1015 atoms/cm3 and ND 1016 atoms/cm3. Calculate the breakdown voltage if %,~, = 3 X 10' Vlcm. , = %c*t in (1.24) to give The breakdown voltage is calculated using, , %

=

1.3 Large-Signal Behavior of Bipolar Transistors In this section, the large-signal or dc behavior of bipolar transistors is considered. Largesignal models are developed for the calculation of total currents and voltages in transistor circuits, and such effects as breakdown voltage limitations, which are usually not included in models, are also considered. Second-order effects, such as current-gain variation with collector current and Early voltage, can be important in many circuits and are treated in detail. The sign conventions used for bipolar transistor currents and voltages are shown in Fig. 1.5. All bias currents for both npn and pnp transistors are assumed positive going into the device.

Large-Signal Behavior of Bipolar Transistors

9

Figure 1.S Bipolar transistor sign convention.

1.3.1 Large-SignalModels in the Forward-ActiveRegion

A typical npn planar bipolar transistor structure is shown in Fig. 1.6a, where collector, base, and emitter are labeled C, B, and E, respectively. The method of fabricating such transistor structures is described in Chapter 2. It is shown there that the impurity doping density in the base and the emitter of such a transistor is not constant but varies with distance from the top surface. However, many of the characteristics of such a device can be predicted by analyzing the idealized transistor structure shown in Fig. 1.6b. In this structure the base and emitter doping densities are assumed constant, and this is sometimes called a uniform-base transistor. Where possible in the following analyses, the equations for the uniform-base analysis are expressed in a form that applies also to nonuniform-base transistors. A cross section AA' is taken through the device of Fig. 1.6b and carrier concentrations along this section are plotted in Fig. 1 . 6 ~Hole . concentrations are denoted by p and electron concentrations by n with subscripts p or n representing p-type or n-type regions. The n-type emitter and collector regions are distinguished by subscripts E and C, respectively. The carrier concentrations shown in Fig. 1 . 6 ~ apply to a device in the forward-active region. That is, the base-emitter junction is forward biased and the base-collector junction is reverse biased. The minority-carrier concentrations in the base at the edges of the depletion regions can be calculated from a Boltzmann approximation to the Fermi-Dirac distribution function to give6 VBE npoexp VT VBC np(WB) = npoexp - 0 VT where WB is the width of the base from the base-emitter depletion layer edge to the basecollector depletion layer edge and n,, is the equilibrium concentration of electrons in the base. Note that VBC is negative for an npn transistor in the forward-active region and thus n,(WB) is very small. Low-level injection conditions are assumed in the derivation of (1.27) and (1.28). This means that the minority-carrier concentrations are always assumed much smaller than the majority-carrier concentration. If recombination of holes and electrons in the base is small, it can be shown that7 the minority-carrier concentration np(x) in the base varies linearly with distance. Thus a straight line can be drawn joining the concentrations at X = 0 and X = WB in Fig. 1 . 6 ~ . For charge neutrality in the base, it is necessary that np(0)

=

-

10 Chapter 1

m Models for Integrated-Circuit Active Devices E

B

C

1 Carrier concentration

Emitter

Base

Collector

(4 Figure 1.6 (a)Cross section of a typical npn planar bipolar transistor structure. (b) Idealized transistor structure. (c) Carrier concentrations along the cross section AA' of the transistor in (b). Uniform doping densities are assumed. (Not to scale.)

and thus

where p,(x) is the hole concentration in the base and NA is the base doping density that is assumed constant. Equation 1.30 indicates that the hole and electron concentrations are separated by a constant amount and thus pp(x) also varies linearly with distance. Collector current is produced by minority-carrier electrons in the base diffusing in the direction of the concentration gradient and being swept across the collector-base depletion region by the field existing there. The diffusion current density due to electrons in the base is

1.3 Large-Signal Behavior of Bipolar Transistors

11

where D, is the diffusion constant for electrons. From Fig. 1 . 6 ~

If Ic is the collector current and is taken as positive flowing into the collector, it follows from (1.32) that

where A is the cross-sectional area of the emitter. Substitution of (1.27) into (1.33) gives

zc

=

qAD n WB

=

VBE' Is exp VT

VBE exp VT

where

and Is is a constant used to describe the transfer characteristic of the transistor in the forward-active region. Equation 1.36 can be expressed in terms of the base doping density by noting thats (see Chapter 2 )

and substitution of (1.37) in (1.36) gives

where QB = WBNA is the number of doping atoms in the base per unit area of the emitter and ni is the intrinsic carrier concentration in silicon. In this form (1.38) applies to both uniform- and nonuniform-base transistors and D, has been replaced by D,, which is an average effective value for the electron diffusion constant in the base. This is necessary for nonuniform-base devices because the diffusion constant is a function of impurity concentration. Typical values of Is as given by (1.38) are from 10-l4 to 10-l6 A. Equation 1.35 gives the collector current as a function of base-emitter voltage. The base current IB is also an important parameter and, at moderate current levels, consists of two major components. One of these ( I B l )represents recombination of holes and electrons in the base and is proportional to the minority-carrier charge Q, in the base. From Fig. 1.6c, the minority-carrier charge in the base is

and we have

12

Chapter 1

4


where rb is the minority-carrier lifetime in the base. IB1 represents a flow of majority holes from the base lead into the base region. Substitution of (1.27) in (1.40) gives

The second major component of base current (usually the dominant one in integratedcircuit npn devices) is due to injection of holes from the base into the emitter. This current component depends on the gradient of minority-carrier holes in the emitter and is9

where D, is the diffusion constant for holes and L, is the diffusion length (assumed small) for holes in the emitter. pnE(0) is the concentration of holes in the emitter at the edge of the depletion region and is

If ND is the donor atom concentration in the emitter (assumed constant), then

The emitter is deliberately doped much more heavily than the base, making ND large and p n ~small, o so that the base-current component, IB2,is minimized. Substitution of (1.43) and (1.44) in (1.42) gives qAD n2 VBE IB2= -P exp -

The total base current, IB, is the sum of ZB1 and IB2:

Although this equation was derived assuming uniform base and emitter doping, it gives the correct functional dependence of IBon device parameters for practical double-diffused nonuniform-base devices. Second-order components of ZB, which are important at low current levels, are considered later. Since Ic in (1.35) and IBin (1.46) are both proportional to exp(VBE/VT)in this analysis, the base current can be expressed in terms of collector current as

where PF is the forward current gain. An expression for PF can be calculated by substituting (1.34) and (1.46) in (1.47) to give

where (1.37) has been substituted for npo. Equation 1.48 shows that PF is maximized by minimizing the base width WB and maximizing the ratio of emitter to base doping


13

densities ND/NA.Typical values of PF for npn transistors in integrated circuits are 50 to 500, whereas lateral pnp transistors (to be described in Chapter 2) have values l 0 to 100. Finally, the emitter current is

where

The value of in (1.50)to obtain

can be expressed in terms of device parameters by substituting (1.48)

where

C< 1 and ( D P / D n ) ( W B / L p ) ( N A< /< N~ 1 ,) The validity of (1.51) depends on and this is always true if PF is large [see (1.48)].The term y in (1.51) is called the emitter injection eficiency and is equal to the ratio of the electron current (npn transistor) injected into the base from the emitter to the total hole and electron current crossing the base-emitter junction. Ideally y + 1 , and this is achieved by making ND/NAlarge and WBsmall. In that case very little reverse injection occurs from base to emitter. The term a~ in (1.51)is called the base transport factor and represents the fraction of carriers injected into the base (from the emitter) that reach the collector. Ideally a~ + 1 and this is achieved by making WBsmall. It is evident from the above development that fabrication changes that cause ar and y to approach unity also maximize the value of PF of the transistor. The results derived above allow formulation of a large-signal model of the transistor suitable for bias-circuit calculations with devices in the forward-active region. One such circuit is shown in Fig. 1.7 and consists of a base-emitter diode to model (1.46) and a controlled collector-current generator to model (1.47).Note that the collector voltage ideally has no influence on the collector current and the collector node acts as a high-impedance current source. A simpler version of this equivalent circuit, which is often useful, is shown in Fig. 1.7b, where the input diode has been replaced by a batwhich is usually 0.6 to 0.7 V. This represents the fact that in tery with a value VBE(,,,,), the forward-active region the base-emitter voltage varies very little because of the steep slope of the exponential characteristic. In some circuits the temperature coefficient of VBE(on) is important, and a typical value for this is -2 mVPC. The equivalent circuits of Fig. 1.7 apply for npn transistors. For pnp devices the corresponding equivalent circuits are shown in Fig. 1.8.

14

Chapter 1


Figure 1.7 Large-signal models of npn transistors for use in bias calculations. (a) Circuit incorporating an input diode. (b) Simplified circuit with an input voltage source.

Figure 1.8 Large-signal models of pnp transistors corresponding to the circuits of Fig. 1.7.

1.3.2 Effects of Collector Voltage on Large-Signal Characteristics in the Forward-Active Region In the analysis of the previous section, the collector-base junction was assumed reverse biased and ideally had no effect on the collector currents. This is a useful approximation for first-order calculations, but is not strictly true in practice. There are occasions where the influence of collector voltage on collector current is important, and this will now be investigated. The collector voltage has a dramatic effect on the collector current in two regions of device operation. These are the saturation (VCEapproaches zero) and breakdown (VCEvery large) regions that will be considered later. For values of collector-emittervoltage VCEbetween these extremes, the collector current increases slowly as VCEincreases. The reason for this can be seen from Fig. 1.9, which is a sketch of the minority-carrier concentration in the base of the transistor. Consider the effect of changes in VCEon the carrier concentration for constant VBE.Since VBE is constant, the change in VcB equals the change in VCEand this causes an increase in the collector-base depletion-layer width as shown. The change in the base width of the transistor, AWB,equals the change in the depletion-layer width and causes an increase AIc in the collector current. From (1.35) and (1.38) we have Ic

q ~ ~ , n : VBE

= ---- exp QB VT

Differentiation of (1.52) yields

and substitution of (1S2) in (1.53) gives


15

Carrier concentration A I Collector depletion I region widens due to AV ,,

I I

-depletion 4 region I I

Emitter

Base

B

I

I

I

,

~ollector

Figure 1.9 Effect of increases in VCEon the collector depletion region and base width of a bipolar transistor.

, (1.54) becomes For a uniform-base transistor QB = W E N A and

Note that since the base width decreases as VCEincreases, d WBldVcEin (1.55) is negative and thus dIcldVCE is positive. The magnitude of d WBldVcEcan be calculated from (1.18) for a uniform-base transistor. This equation predicts that dWB/dVcE is a function of the bias value of V C E ,but the variation is typically small for a reverse-biased junction and dWsldVcE is often assumed constant. The resulting predictions agree adequately with experimental results. Equation 1.55 shows that dIcldVcs is proportional to the collector-bias current and inversely proportional to the transistor base width. Thus narrow-base transistors show a greater dependence of Ic on VCEin the forward-active region. The dependence of dIcldVcE on Ic results in typical transistor output characteristics as shown in Fig. 1.10. In accordance with the assumptions made in the foregoing analysis, these characteristics are shown for constant values of VBE.However, in most integrated-circuit transistors the base current is dependent only on VBEand not on V C E ,and thus constant-base-current characteristics can often be used in the following calculation. The reason for this is that the base current is usually dominated by the IB2 component of (1.45), which has no dependence on VCE.Extrapolation of the characteristics of Fig. 1.10 back to the VCEaxis gives an intercept V Acalled the Early voltage, where

Substitution of (1.55) in (1S 6 ) gives

which is a constant, independent of Ic. Thus all the characteristics extrapolate to the same point on the VCEaxis. The variation of Ic with VCEis called the Early effect, and V A is a common model parameter for circuit-analysis computer programs. Typical values of V A

16 Chapter 1

Models for integrated-Circuit Active Devices

Figure 1.10 Bipolar transistor output characteristics showing the Early voltage, V A .

for integrated-circuit transistors are 15 to 100 V. The inclusion of Early effect in dc bias calculations is usually limited to computer analysis because of the complexity introduced into the calculation. However, the influence of the Early effect is often dominant in smallsignal calculations for high-gain circuits and this point will be considered later. Finally, the influence of Early effect on the transistor large-signal characteristics in the forward-active region can be represented approximately by modifying (1.35) to Ic

=

( + v:,.) 7:

Is 1

-

exp -

This is a common means of representing the device output characteristics for computer simulation. 1.3.3 Saturation and Inverse-Active Regions

Saturation is a region of device operation that is usually avoided in analog circuits because the transistor gain is very low in this region. Saturation is much more commonly encountered in digital circuits, where it provides a well-specified output voltage that represents a logic state. In saturation, both emitter-base and collector-base junctions are forward biased. Consequently, the collector-emitter voltage V C Eis quite small and is usually in the range 0.05 to 0.3 V.The carrier concentrations in a saturated npn transistor with uniform base doping are shown in Fig. 1.11. The minority-carrier concentration in the base at the edge of the depletion region is again given by (1.28) as

but since VBCis now positive, the value of n p ( W B )is no longer negligible. Consequently, changes in VCEwith VBEheld constant (which cause equal changes in V B C directly ) affect np(We).Since the collector current is proportional to the slope of the minority-carrier concentration in the base [see (1.3 l ) ] ,it is also proportional to [ n p ( 0 ) nP(WB)]from Fig. 1.11. Thus changes in n p ( W B )directly affect the collector current, and the collector node of the transistor appears to have a low impedance. As V C Eis decreased in saturation with V B E held constant, VBCincreases, as does n p ( W B from ) (1.59).Thus from Fig. 1 .l 1 the collector

1.3 Large-Signal Behavior o f Bipolar Transistors

17

Il

Pnc

P~E ,X

Emitter

Base

Il

!

Collector

Figure 1.1 1 Carrier concentrations in a saturated npn transistor. (Not to

scale.)

current decreases because the slope of the carrier concentration decreases. This gives rise to the saturation region of the Ic - VCEcharacteristic shown in Fig. 1.12. The slope of the Ic - VCEcharacteristic in this region is largely determined by the resistance in series with the collector lead due to the finite resistivity of the n-type collector material. A useful model for the transistor in this region is shown in Fig. 1.13 and consists of a fixed voltage source to represent VB,qon),and a fixed voltage source to represent the collector-emitter voltage VCqsat). A more accurate but more complex model includes a resistor in series with the collector. This resistor can have a value ranging from 20 to 500 Cl, depending on the device structure. An additional aspect of transistor behavior in the saturation region is apparent from Fig. 1.11. For a given collector current, there is now a much larger amount of stored charge in the base than there is in the forward-active region. Thus the base-current contribution represented by (1.41) will be larger in saturation. In addition, since the collector-base junction is now forward biased, there is a new base-current component due to injection of carriers from the base to the collector. These two effects result in a base current IB in saturation, which is larger than in the forward-active region for a given collector current Ic. Ratio Ic/IB in saturation is often referred to as the forced P and is always less than PF. As the forced P is made lower with respect to PF, the device is said to be more heavily saturated. The minority-carrier concentration in saturation shown in Fig. 1.11 is a straight line joining the two end points, assuming that recombination is small. This can be represented as a linear superposition of the two dotted distributions as shown. The justification for this is that the terminal currents depend linearly on the concentrations np(0) and np(WB).This picture of device carrier concentrations can be used to derive some general equations describing transistor behavior. Each of the distributions in Fig. l . l l is considered separately and the two contributions are combined. The emitter current that would result from npl (X) above is given by the classical diode equation

( ? )

IEF = -IES exp - - 1

where IESis a constant that is often referred to as the saturation current of the junction (no connection with the transistor saturation previously described). Equation 1.60 predicts that the junction current is given by IEF = IESwith a reverse-bias voltage applied. However,

18 Chapter 1


Figure 1.12 Typical I c - V c ~characteristics for an npn bipolar transistor. Note the different scales for positive and negative currents and voltages.

Figure 1 .l3

(4 nPn (b)P V Large-signal models for bipolar transistors in the saturation region.

in practice (1.60) is applicable only in the forward-bias region, since second-order effects dominate under reverse-bias conditions and typically result in a junction current several orders of magnitude larger than IES. The junction current that flows under reverse-bias conditions is often called the leakage current of the junction. Returning to Fig. 1.11, we can describe the collector current resulting from nP2(x) alone as ICR

= -ICS

7: )

(

exp - - 1

where Ics is a constant. The total collector current Ic is given by ICR plus the fraction of IEF that reaches the collector (allowing for recombination and reverse emitter injection). Thus

(:,"

)

Ic = a F I E s exp - - 1

-

(7; )

ICS exp - - 1


19

where a~ has been defined previously by (1.51). Similarly, the total emitter current is composed of IEF plus the fraction of ICR that reaches the emitter with the transistor acting in an inverted mode. Thus IE

=

( ? )

-IES exp-

-

1

(7:)

+ aRICS exp-

-

1

where ( Y R is the ratio of emitter to collector current with the transistor operating inverted (i.e., with the collector-base junction forward biased and emitting carriers into the base and the emitter-base junction reverse biased and collecting carriers). Typical values of c r ~ are 0.5 to 0.8. An inverse current gain PR is also defined

and has typical values 1 to 5. This is the current gain of the transistor when operated inverted and is much lower than PF because the device geometry and doping densities are designed to maximize PF. The inverse-active region of device operation occurs for VCE negative in an n p n transistor and is shown in Fig. 1.12. In order to display these characteristics adequately in the same figure as the forward-active region, the negative voltage and current scales have been expanded. The inverse-active mode of operation is rarely encountered in analog circuits. Equations 1.62 and 1.63 describe n p n transistor operation in the saturation region when VBE and VBC are both positive, and also in the forward-active and inverse-active regions. These equations are the Ebers-Moll equations. In the forward-active region, they degenerate into a form similar to that of (1.33, (1.47), and (1.49) derived earlier. This can be shown by putting VBEpositive and VBc negative in (1.62) and (1.63) to obtain

IE

=

( ?: )

-IES exp-

-

1 - ffRIcs

Equation 1.65 is similar in form to (1.35) except that leakage currents that were previously neglected have now been included. This minor difference is significant only at high temperatures or very low operating currents. Comparison of (1.65) with (1.35) allows us to identify Is = (YFIES,and it can be shown1•‹in general that

where this expression represents a reciprocity condition. Use of (1.67) in (1.62) and (1.63) allows the Ebers-Moll equations to be expressed in the general form Ic

=

(

:

) (tSR

Is exp - - 1 -

-

(exp -

I)

This form is often used for computer representation of transistor large-signal behavior. The effect of leakage currents mentioned above can be further illustrated as follows. In the forward-active region, from (1.66)

( ?B )

IES exp - - 1

=

-IE - QRICS

Chapter 1


Substitution of (1.68) in (1.65)gives

where

and Ico is the collector-base leakage current with the emitter open. Although Ico is given theoretically by (1.69a),in practice, surface leakage effects dominate when the collectorbase junction is reverse biased and Ico is typically several orders of magnitude larger than the value given by (1.69a).However, (1.69)is still valid if the appropriate measured value for Ico is used. Typical values of Ico are from 10-l0 to 10-l2 A at 25OC, and the magnitude doubles about every 8•‹C.As a consequence, these leakage terms can become very significant at high temperatures. For example, consider the base current IB. From Fig. 1.5 this is

r,

=

-(lc + I E )

(1.70)

If IE is calculated from (1.69) and substituted in (1.70),the result is

But from ( 1 SO)

and use of (1.72)in (1.7 1) gives

Since the two terms in (1.73) have opposite signs, the effect of Ico is to decrease the magnitude of the external base current at a given value of collector current. EXAMPLE

If Ico is 10-l0 A at 24"C, estimate its value at 120•‹C. Assuming that Ico doubles every 8"C, we have IC0(12O0C)= 10-l0 X 212 = 0.4 pA

1.3.4 Transistor Breakdown Voltages In Section 1.2.2 the mechanism of avalanche breakdown in a pn junction was described. Similar effects occur at the base-emitter and base-collector junctions of a transistor and these effects limit the maximum voltages that can be applied to the device. First consider a transistor in the common-base configuration shown in Fig. 1 . 1 4 ~and supplied with a constant emitter current. Typical Ic - VCBcharacteristics for an npn transistor in such a connection are shown in Fig. 1.14b. For IE = 0 the collector-base junction breaks down at a voltage BVcBo, which represents collector-base breakdown with the emitter open. For finite values of IE, the effects of avalanche multiplication are apparent for values of VcBbelow BVcBo. In the example shown, the effective common-base current


I

I (b)

BVCBO

21

transistor connection. (a) Test circuit. (b) Zc - V C B characteristics.

gain a~ = Ic/IE becomes larger than unity for values of VCBabove about 60 V. Operation in this region (but below BVcBo) can, however, be safely undertaken if the device power dissipation is not excessive. The considerations of Section 1.2.2 apply to this situation, and neglecting leakage currents, we can calculate the collector current in Fig. 1 . 1 4 as ~

where M is defined by (1.26) and thus

One further point to note about the common-base characteristics of Fig. 1.14b is that for low values of VcB where avalanche effects are negligible, the curves show very little of the Early effect seen in the common-emitter characteristics. Base widening still occurs in this configuration as VcB is increased, but unlike the common-emitter connection, it produces little change in Ic. This is because IEis now fixed instead of VBEor IB, and in Fig. 1.9, this means the slope of the minority-carrier concentration at the emitter edge of the base is fixed. Thus the collector current remains almost unchanged. Now consider the effect of avalanche breakdown on the common-emitter characteristics of the device. Typical characteristics are shown in Fig. 1.12, and breakdown occurs at a value BVcEo, which is sometimes called the sustaining voltage LVcEo. As in previous cases, operation near the breakdown voltage is destructive to the device only if the current (and thus the power dissipation) becomes excessive. The effects of avalanche breakdown on the common-emitter characteristics are more complex than in the common-base configuration. This is because hole-electron pairs are produced by the avalanche process and the holes are swept into the base, where they effectively contribute to the base current. In a sense the avalanche current is then amplzjied

22 Chapter 1


by the transistor. The base current is still given by IB

=

-(Ic

+ IE)

Equation 1.74 still holds, and substitution of this in (1.76) gives

where

Equation 1.77 shows that lc approaches infinity as M a F approaches unity. That is, the effective approaches infinity because of the additional base-current contribution from the avalanche process itself. The value of BVcEo can be determined by solving

If we assume that VCR= V C ~this , gives

and this results in

and thus

Equation 1.81 shows that BVcEo is less than BVcBo by a substantial factor. However, the value of BVcBo, which must be used in (1.81), is the plane junction breakdown of the collector-base junction, neglecting any edge effects. This is because it is only collectorbase avalanche current actually under the emitter that is amplified as described in the previous calculation. However, as explained in Section 1.2.2, the measured value of BVcso is usually determined by avalanche in the curved region of the collector, which is remote from the active base. Consequently, for typical values of PF = 100 and n = 4, the value of BVcEo is about one-half of the measured BVcso and not 30 percent as (1.81) would indicate. Equation 1 .8 1 explains the shape of the breakdown characteristics of Fig. 1.12 if the dependence of PF on collector current is included. As VCEis increased from zero with IB = 0, the initial collector current is approximately P F I C o from (1.73);since Ico is typically several picoamperes, the collector current is very small. As explained in the next section, PF is small at low currents, and thus from (1.81) the breakdown voltage is high. However, as avalanche breakdown begins in the device, the value of Ic increases and thus PF increases. From (1.81) this causes a decrease in the breakdown voltage and the characteristic bends back as shown in Fig. 1.12 and exhibits a negative slope. At higher collector currents, PF approaches a constant value and the breakdown curve with Is = 0 becomes perpendicular to the VCEaxis. The value of V C Ein this region of the curve is

1.3 Large-SignalBehavior of Bipolar Transistors

23

usually defined to be BVcEo, since this is the maximum voltage the device can sustain. The value of PF to be used to calculate BVcEo in (1.81) is thus the peak value of PF. Note from (1.81) that high-P transistors will thus have low values of BVcEo. The base-emitter junction of a transistor is also subject to avalanche breakdown. However, the doping density in the emitter is made very large to ensure a high value of P.r[ND is made large in (1.45) to reduce IB2].Thus the base is the more lightly doped side of the junction and determines the breakdown characteristic. This can be contrasted with the collector-base junction, where the collector is the more lightly doped side and results in typical values of BVcBo of 20 to 80 V or more. The base is typically an order of magnitude more heavily doped than the collector, and thus the base-emitter breakdown voltage is much less than BVcBo and is typically about 6 to 8 V. This is designed BVEBO.The breakdown voltage for inverse-active operation shown in Fig. 1.12 is approximately equal to this value because the base-emitter junction is reverse biased in this mode of operation. The base-emitter breakdown voltage of 6 to 8 V provides a convenient reference voltage in integrated-circuit design, and this is often utilized in the form of a Zener diode. However, care must be taken to ensure that all other transistors in a circuit are protected against reverse base-emitter voltages sufficient to cause breakdown. This is because, unlike collector-base breakdown, base-emitter breakdown is damaging to the device. It can cause a large degradation in PF, depending on the duration of the breakdown-current flow and its magnitude." If the device is used purely as a Zener diode, this is of no consequence, but if the device is an amplifying transistor, the PF degradation may be serious.

EXAMPLE If the collector doping density in a transistor is 2 X 1015 atoms/cm3 and is much less than = 3 X 105V/cm. the base doping, calculate BVcEo for P = 100 and n = 4. Assume The plane breakdown voltage in the collector can be calculated from (1.24) using gmax = Zcrit:

Since No (VGS- Vt). The pinch-off region for MOS devices is often called the saturation region. In saturation, the output characteristics are almost flat, which shows that the current depends mostly on the gate-source voltage and only to a small extent on the drain-source voltage. On the other hand, when VDs < (VGS- Vt), the device operates in the Ohmic or triode region, where the device can be modeled as a nonlinear voltage-controlled resistor connected between the drain and source. The resistance of this resistor is nonlinear because the V& term in (1.152) causes the resistance to depend on VDs. Since this term is small when VDs is small, however, the nonlinearity is also small when VDs is small, and the triode region is also sometimes called the linear region. The boundary between the triode and saturation regions occurs when VDs = (VGS- Vt). On this boundary, both (1.l52) and (1.157) correctly predict ID.Since VDs = (VGS- Vt) along the boundary between triode and satThis . parabolic function uration, (1.157) shows that the boundary is ID= ( ~ ' I ~ ) ( w I L ) v & ID

1

Ohmic or triode region

I

,

Active or pinch-off region

increases

-

v~~

Figure 1.29 NMOS device characteristics.

45

1.5 Large-Signal Behavior of Metal-Oxide-SemiconductorField-Effect Transistors

of VDs is shown in Fig. 1.29. For depletion n-channel MOS devices, V, is negative, and ID is nonzero even for VGS = 0. For PMOS devices, all polarities of voltages and currents are reversed. The results derived above can be used to form a large-signaI model of the NMOS transistor in saturation. The model topology is shown in Fig. 1.30, where ID is given by (1.152) in the triode region and (1.157) in saturation, ignoring the effect of channel-length modulation. To include the effect of channel-length modulation, (1.159) or (1.165) should be used instead of (1.157) to find the drain current in saturation. 1.5.2 Comparison of Operating Regions of Bipolar and MOS Transistors

Notice that the meaning of the word saturation for MOS transistors is quite different than for bipolar transistors. Saturation in bipolar transistors refers to the region of operation where both junctions are forward biased and the collector-emitter voltage is approximately constant or saturated. On the other hand, saturation in MOS transistors refers to the region of operation where the channel is attached only to the source but not to the drain and the current is approximately constant or saturated. To avoid confusion, the term active region will be used in this book to describe the flat region of the MOS transistor characteristics, as shown in Fig. 1.29. This wording is selected to form a link between the operation of MOS and bipolar transistors. This link is summarized in the table of Fig. 1.31, which reviews the operating regions of npn bipolar and n-channel MOS transistors. When the emitter junction is forward biased and the collector junction is reverse biased, bipolar transistors operate in the forward-active region. They operate in the reverseactive region when the collector junction is forward biased and the emitter junction is reverse biased. This distinction is important because integrated-circuit bipolar transistors are typically not symmetrical in practice; that is, the collector operates more efficiently as a collector of minority carriers than as an emitter. Similarly, the emitter operates more efficiently as an emitter of minority carriers than as a collector. One reason for this asymmetry is that the collector region surrounds the emitter region in integrated-circuit bipolar transistors, as shown in Fig. 1.19. A consequence of this asymmetry is that the current gain in the forward-active region PF is usually much greater than the current gain in the reverse-active region PR.

o

l

-

S

l

J

Figure 1.30

I

npn Bipolar Transistor

Region

VBE

Cutoff Forward Active Reverse Active Saturation

< VBC(~~) VBECon) < VBC(on) < VBE(on) 2 V R ~ ( ~ 2 VBE(O~) 2 VBC(O~)

Figure 1.31

Large-signal model for the NMOS

transistor.

vB~(on)

2

VBC

l

n-channel MOS Transistor

Region

VGS

VGD

Cutoff Saturation(Active) ~Saturation(Active) ) Triode

c

vl

2

V,

< vt < vt

< V,

m V,

r V,

2

Operating regions of npn bipolar and n-channel MOS transistors.

V,

1

46 Chapter 1


In contrast, the source and drain of MOS transistors are completely interchangeable based on the preceding description. (In practice, the symmetry is good but not perfect.) Therefore, distinguishing between the forward-active and reverse-active regions of operation of an MOS transistor is not necessary. Figure 1.31 also shows that npn bipolar transistors operate in cutoff when both junctions are reversed biased. Similarly, MOS transistors operate in cutoff when the gate is biased so that inversion occurs at neither the source nor the drain. Furthermore, npn transistors operate in saturation when both junctions are forward biased, and MOS transistors operate in the triode region when the gate is biased so that the channel is connected to both the source and the drain. Therefore, this comparison leads us to view the voltage required to invert the surface of an MOS transistor as analogous to the voltage required to forward bias a pn junction in a bipolar transistor. To display this analogy, we will use the circuit symbols in Fig. 1 . 3 2 ~ to represent MOS transistors. These symbols are intentionally chosen to appear similar to the symbols of the corresponding bipolar transistors. In bipolar-transistor symbols, the arrow at the emitter junction represents the direction of current flow when the emitter junction is forward biased. In MOS transistors, the pn junctions between the source and body and the drain and body are reverse biased for normal operation. Therefore, the arrows in Fig. 1 . 3 2 ~ do not indicate pn junctions. Instead they indicate the direction of current flow when the terminals are biased so that the terminal labeled as the drain operates as the drain and the terminal labeled as the source operates as the source. In NMOS transistors, the source is the source of electrons; therefore, the source operates at a lower voltage than the drain, and the current flows in a direction opposite that of the electrons in the channel. In PMOS transistors, the source is the source of holes; therefore, the source operates at a higher voltage than the drain, and the current flows in the same direction as the holes in the channel. In CMOS technology, one device type is fabricated in the substrate, which is common to all devices, invariably connected to a dc power-supply voltage, and usually not shown on the circuit diagram. The other device type, however, is fabricated in separate isolation

n-channel

p-channel

(4

S

n-channel

p-channel

n-channel

p-channel

Figure 1.32 (a) NMOS and PMOS symbols used in CMOS circuits. (b) NMOS and PMOS symbols used when the substrate connection is nonstandard. (c) Depletion MOS device symbols.

l

1.5 Large-SignalBehavior of Metal-Oxide-Semiconductor Field-Effect Transistors

47

regions called wells, which may or may not be connected together and which may or may not be connected to a power-supply voltage. If these isolation regions are connected to the appropriate power supply, the symbols of Fig. 1 . 3 2 ~will be used, and the substrate connection will not be shown. On the other hand, if the individual isolation regions are connected elsewhere, the devices will be represented by the symbols of Fig. 1.32b, where the substrate is labeled B. Finally, symbols for depletion-mode devices, for which a channel forms for VGS = 0 , are shown in Fig. 1 . 3 2 ~ .

1S.3 Decompositionof Gate-Source Voltage The gate-source voltage of a given MOS transistor is usually separated into two parts: the threshold, V,, and the voltage over the threshold, VGS- Vt. We will refer to this latter part of the gate-source voltage as the overdrive. This decomposition is used because these two components of the gate-source voltage have different properties. Assuming square-law behavior as in (1.157), the overdrive is

Since the transconductance parameter k' is proportional to mobility, and since mobility falls with increasing temperature, the overdrive rises with temperature. In contrast, the next section shows that the threshold falls with increasing temperature. Furthermore, (1.140) shows that the threshold depends on the source-body voltage, but not on the current; (1.166) shows that the overdrive depends directly on the current, but not on the source-body voltage.

1.5.4 Threshold Temperature Dependence Assume that the source-body voltage is zero. Substituting (1.138) into (1.139) gives

,, Assume that + (1.167) gives

Qss, and C,, are independent of temperature.19 Then differentiating

Substituting (1.136) into (1.135) gives

Assume both N, and N, are independent of temperature.20 Then differentiating (1.169) gives

48 Chapter 1


Substituting (1.169) into (1.170) and simplifying gives

Substituting (1.141) and ( l . 171) into (1.168) gives

Equation 1.172 shows that the threshold voltage falls with increasing temperature if < Egl(2q). The slope is usually in the range of -0.5 mVPC to -4 ~ v I O C . ~ ~

+

EXAMPLE Assume T = 300•‹K,NA From (1.135),

=

1015

and to,

=

100 A. Find dV,ldT.

Also

Substituting (1.173) and (1.174) into (1.17 1) gives

From (1.142), Cox =

3.9 (8.854 x 10-14 Flcm) 100 X I O - ~cm

=

fF 3.45 km2

Also,

Substituting (1.173) - (1.177) into (1.172) gives

1.5.5 MOS Device Voltage Limitations The main voltage limitations in MOS transistors are described next.22v23Some of these limitations have a strong dependence on the gate length L; others have little dependence on L. Also, some of the voltage limitations are inherently destructive; others cause no damage as long as overheating is avoided.

1

1.6 Small-Signal Models of MOS Transistors

49

Junction Breakdown. For long channel lengths, the drain-depletion region has little

effect on the channel, and the I ~ - v e r s u s - Vcurves ~ ~ closely follow the ideal curves of Fig. 1.29. For increasing VDs, however, eventually the drain-substrate pn-junction breakdown voltage is exceeded, and the drain current increases abruptly by avalanche breakdown as described in Section 1.2.2. This phenomenon is not inherently destructive. Punchthrough. If the depletion region around the drain in an MOS transistor touches the depletion region around the source before junction breakdown occurs, increasing the drainsource voltage increases the drain current by reducing the barrier to electron flow between the source and drain. This phenomenon is called punchthrough. Since it depends on the two depletion regions touching, it also depends on the gate length. Punchthrough is not inherently destructive and causes a more gradual increase in the drain current than is caused by avalanche breakdown. Punchthrough normally occurs below the surface of the silicon and is often prevented by an extra ion implantation below the surface to reduce the size of the depletion regions. Hot Carriers. With sufficient horizontal or vertical electric fields, electrons or holes may reach sufficient velocities to be injected into the oxide, where most of them increase the gate current and some of them become trapped. Such carriers are called hot because the required velocity for injection into the oxide is usually greater than the random thermal velocity. Carriers trapped in the oxide shift the threshold voltage and may cause a transistor to remain on when it should turn off or vice versa. In this sense, injection of hot carriers into the oxide is a destructive process. This process is most likely to be problematic in short-channel technologies, where horizontal electric fields are likely to be high. Oxide Breakdown. In addition to VDs limitations, MOS devices must also be protected

against excessive gate voltages. Typical gate oxides break down with an electric field of ~ ~ *corresponds ~ ~ to 6 to 7 V applied from about 6 X 106 V/cm to 7 X 106 v / c ~ , which gate to channel with an oxide thickness of 100 angstroms. Since this process depends on the vertical electrical field, it is independent of channel length. However, this process is destructive to the transistor, resulting in resistive connections between the gate and the channel. Oxide breakdown can be caused by static electricity and can be avoided by using pn diodes and resistors to limit the voltage range at sensitive nodes internal to the integrated circuit that connect to bonding pads.

1.6 Small-Signal Models of MOS Transistors As mentioned in Section 1S,MOS transistors are often used in analog circuits. To simplify the calculation of circuit gain and terminal impedances, small-signal models can be used. As in the case for bipolar transistors, a hierarchy of models with increasing complexity can be derived, and choosing the simplest model required to do a given analysis is important in practice. Consider the MOS transistor in Fig. 1.33 with bias voltages VGS and VDD applied as shown. These bias voltages produce quiescent drain current ID. If VGS > V, and VDD > (VGS- Vt),the device operates in the saturation or active region. A small-signal input voltage vi is applied in series with VGS and produces a small variation in drain current id. The total value of the drain current is Id = (ID + id).

50 Chapter 1

Models for Integrated-Circuit Active Devices t Id = ID

+ id

---

"DD

-

Figure 1.33 Schematic of an MOS transistor with biasing.

1.6.1 Transconductance Assuming square-law operation, the transconductance from the gate can be determined from (1.165) by differentiating.

If AVDs V,,, the transistor operates in the saturation or active region. From (1.180),

From (1.199),

From (1.194), 1 looo kdl AID 0.02 X 100

T O = - -

Using (1.201) with Vss

=

1 V , we find

The voltage from drain to body is

=

500 kdl

58 Chapter 1


and substitution in (1.202) gives Cdb

=

l0 fF=4fF (l+&r

From (1.142), the oxide capacitance per unit area is

The intrinsic portion of the gate-source capacitance can be calculated from (1.191), giving C,, =

2 -

3

X

10 X 1 X 3.45 fF

-

23 fF

The addition of overlap capacitance gives C,, = 24 fF Finally, since the transistor operates in the saturation or active region, the gate-drain capacitance consists of only overlap capacitance and is

c,,

=

l fF

The complete small-signal equivalent circuit is shown in Fig. 1.38. The fT of the device can be calculated from (1.208) as 1 2 n C,,

T - -

m

-

gm

+ cgb+ C,,

- -I

237

X 632 X 1oP6 X

1015 Hz = 3.4 GHz 24+5+1

1.7 Short-Channel Effects in MOS Transistors The evolution of integrated-circuit processing techniques has led to continuing reductions in both the horizontal and vertical dimensions of the active devices. (The minimum 1 fF

Figure 1.38 Complete small-signal equivalent circuit for an NMOS transistor with ID = 100 pA, V S B = 1 V , VDs = 2 V . Device paramtters are W = 10 pm, L = 1 pm, y = 0.5 V1I2, k' =

200 p m 2 , A = 0.02 V-', Cgb= 5 fF.

to, =

100 A, $0

=

0.6 V , CsbO= CdbO= 10 fF,Cgd = 1 fF, and

1

1.7 Short-Channel Effects in MOS Transistors

59

allowed dimensions of passive devices have also decreased.) This trend is driven primarily by economics in that reducing dimensions increases the number of devices and circuits that can be processed at one time on a given wafer. A second benefit has been that the frequency capability of the active devices continues to increase, as intrinsic fr values increase with smaller dimensions while parasitic capacitances decrease. Vertical dimensions such as the base width of a bipolar transistor in production processes may now be on the order of 0.05 p m or less, whereas horizontal dimensions such as bipolar emitter width or MOS transistor gate length may be significantly less than 1 pm. Even with these small dimensions, the large-signal and small-signal models of bipolar transistors given in previous sections remain valid. However, significant short-channel effects become important in MOS transistors at channel lengths of about 1 p m or less and require modifications to the MOS models given previously. The primary effect is to modify the classical MOS square-law transfer characteristic in the saturation or active region to make the device voltage-to-current transfer characteristic more linear. However, even in processes with submicron capability, many of the MOS transistors in a given analog circuit may be deliberately designed to have channel lengths larger than the minimum and may be well approximated by the square-law model.

1.7.1 Velocity Saturation from the Horizontal Field The most important short-channel effect in MOS transistors stems from velocity saturation of carriers in the channel.27 When an MOS transistor operates in the triode region, the average horizontal electric field along the channel is VDsIL.When VDsis small andlor L is large, the horizontal field is low, and the linear relation between carrier velocity and field assumed in (1.148) is valid. At high fields, however, the carrier velocities approach the thermal velocities, and subsequently the slope of the carrier velocity decreases with increasing field. This effect is illustrated in Fig. 1.39, which shows typical measured electron drift velocity vd versus horizontal electric field strength magnitude 8 in an NMOS surface channel. While the velocity at low field values is proportional to the field, the velocity at high field values approaches a constant called the scattering-limited velocity v,,~. A first-order analytical approximation to this curve is

Figure 1.39 Typical

5 x 1 0 ~ ~ 1o5

I 1o6

Electric field %: (V/m)

I 1o7

C

measured electron drift velocity vd versus horizontal electric field 8 in an MOS surface channel (solid plot). Also shown (dashed plot) is the analytical approximation of Eq. 1.212 with 8, = 1.5 X 106 V/m and p n = 0.07 m2N-S.

60

Chapter 1


where %, = 1.5 X 106 Vlm and p n = 0.07 m2/v-s is the low-field mobility close to the gate. Equation 1.212 is also plotted in Fig. 1.39. From (1.212), as % -. W, vd -+ v , , ~ = p,%,. At the critical field value %, the carrier velocity is a factor of 2 less than the lowfield formula would predict. In a device with a channel length L = 0.5 pm, we need a voltage drop of only 0.75 V along the channel to produce an average field equal to %, and this condition is readily achieved in short-channel MOS transistors. Similar results are found for PMOS devices. Substituting (1.212) and (1.149) into (1.147) and rearranging gives

Note that as %, + W and velocity saturation becomes negligible, (1.213) approaches the original equation (1.147). Integrating (1.213) along the channel, we obtain

and thus

In the limit as 8,--+ a,(1.215) is the same as (1.152), which gives the drain current in the triode region without velocity saturation. The quantity VDs/L in (1.215) can be interpreted as the average horizontal electric field in the channel. If this field is comparable to %, the drain current for a given VDs is less than the simple expression (1.152) would predict. Equation 1.215 is valid in the triode region. Let VDqaCt) represent the maximum value of VDs for which the transistor operates in the triode region, which is equivalent to the minimum value of VDs for which the transistor operates in the active region. In the active region, the current should be independent of VDs because channel-length modulation is not included here. Therefore, VDs(act)is the value of VDs that sets dIDldVDs = 0. From (1.215),

where k'

= pnCoxas

given by (1.153). To set dIDldVDs = 0,

Rearranging (1.217) gives

Solving the quadratic equation gives

1

1.7 Short-Channel Effects in MOS Transistors

61

Since the drain-source voltage must be greater than zero,

m so that the drift To determine VDs(act)without velocity-saturation effects, let %, velocity is proportional to the electric field, and let X = (VGS- Vt)l(%,L). Then X 0, and a Taylor series can be used to show that +

+

Using (1.221) in (1.220) gives

When %, + m, (1.222) shows that VDs(actj+ (VGS - V/), as expected.28 This observation is confirmed by plotting the ratio of VDscXgto the overdrive V,, versus %,L in Fig. a,VDS(act) + Vov = VGS - Vt, as predicted by (1.222). On the other 1.40. When %, hand, when %, is small enough that velocity saturation is significant, Fig. 1.40 shows that VDS(act) < Vov. To find the drain current in the active region with velocity saturation, substitute VDS(act) in (1.220) for VDs in (1.215). After rearranging, the result is +

Equation 1.223 is in the same form as (1.157), where velocity saturation is neglected, except that VDs(act)is less than (VGS- Vt) when velocity saturation is significant, as shown in Fig. 1.40. Therefore, the current predicted by (1.157) overestimates the current that really flows when the carrier velocity saturates. To examine the limiting case when the velocity is completely saturated, let 8,+ 0. Then (1.212) shows that the drift velocity approaches the scattering-limited velocity vd --+ v,,l = pn%,. Substituting (1.220) into (1.223) gives

Figure 1.40 Ratio of the minimum drain-source voltage required for operation in the active region to the overdrive versus the product of the critical field and the channel length. When 8, + m, velocity saturation is not a factor, and VnS(act)-+ V,, = VGS- V,, as expected. When velocity saturation is significant, Vosc,,,, < V,],,.

62

Chapter 1


In contrast to the square-law behavior predicted by (1.157), (1.224) shows that the drain current is a linear function of the overdrive (VGS- V t )when the carrier velocity saturates. Also, (1.224) shows that the drain current is independent of the channel length when the carrier velocity saturates. In this case, both the charge in the channel and the time required for the charge to cross the channel are proportional to L. Since the current is the ratio of the charge in the channel to the time required to cross the channel, the current does not depend on L as long as the channel length is short enough to produce an electric field that is high enough for velocity saturation to occur.29In contrast, when the carrier velocity is proportional to the electric field instead of being saturated, the time required for channel charge to cross the channel is proportional to because increasing L both reduces the carrier velocity and increases the distance between the source and the drain. Therefore, when velocity saturation is not significant, the drain current is inversely proportional to L, as we have come to expect through (1.157). Finally, (1.224) shows that the drain current in the active region is proportional to the scattering-limited velocity v,,l = p,,%, when the velocity is saturated. Substituting ( l .222) into (1.223) gives

where X

=

(VGS- Vt)/(%, L) as defined for (1.221). If

X

Cgb + Cgd, substituting (1.235) into (1.208) shows that

One key point here is that the transition frequency is independent of the overdrive once velocity saturation is reached. In contrast, (1.209) shows that increasing (VGS - Vt) increases fr before the velocity saturates. Also, (1.241) shows that the transition frequency

1.8 Weak lnversion in MOS Transistors

65

Figure 1.42 Transconductanceto-current ratio versus overdrive (VGS- V t )where velocity saturation is insignificant (%, L m), dominant (%,L = O), and of gradually increasing importance

-

3

(%,L

=

0.75 V ) .

is inversely proportional to the channel length when the velocity is saturated. In contrast, (1.209) predicts that fT is inversely proportional to the square of the channel length before the velocity saturates. As a result, velocity saturation reduces the speed improvement that can be achieved through reductions in the minimum channel length.

1.7.3 Mobility Degradation from the Vertical Field Thus far, we have considered only the effects of the horizontal field due to the VDsalong the channel when considering velocity saturation. However, a vertical field originating from the gate voltage also exists and influences carrier velocity. A physical reason for this effect is that increasing the vertical electric field forces the carriers in the channel closer to the surface of the silicon, where surface imperfections impede their movement from the source to the drain, reducing mobility.31 The vertical field at any point in the channel depends on the gate-channel voltage. Since the gate-channel voltage is not constant from the source to the drain, the effect of the vertical field on mobility should be included within the integration in (1.214) in principle.32For simplicity, however, this effect is often modeled after integration by changing the mobility in the previous equations to an effective mobility given by

where p, is the mobility with zero vertical field, and 6 is inversely proportional to the oxide thickness. For to, = 100 A , 6 is typically in the range from 0.1 V-' to 0.4 V-' .33 In practice, 0 is determined by a best fit to measured device characteristics.

1.8 Weak lnversion in MOS Transistors The MOSFET analysis of Section 1.5 considered the normal region of operation for which a well-defined conducting channel exists under the gate. In this region of strong inversion, changes in the gate-source voltage are assumed to cause only changes in the channel charge and not in the depletion-region charge. In contrast, for gate-source voltages less than the extrapolated threshold voltage V tbut high enough to create a depletionregion at the surface of the silicon, the device operates in weak inversion. In the weak-inversion region, the

66 Chapter 1


channel charge is much less than the charge in the depletion region, and the drain current arising from the drift of majority carriers is negligible. However, the total drain current in weak inversion is larger than that caused by drift because a gradient in minority-carrier concentration causes a diffusion current to flow. In weak inversion, an n-channel MOS transistor operates as an npn bipolar transistor, where the source acts as the emitter, the substrate as the base, and the drain as the collector.34 1.8.1 Drain Current in Weak Inversion

To analyze this situation, assume that the source and the body are both grounded. Also assume that VDs > 0. (If VDs < 0, the drain acts as the emitter and the source as the c ~ l l e c t o r . )Then ~ ~ increasing the gate-source voltage increases the surface potential which tends to reduce the reverse bias across the source-substrate (emitter-base) junction and to exponentially increase the concentration of electrons in the p-type substrate at the source np(0). From (1.27),

+,,

np(0)

=

+S np, exp VT

where n,, is the equilibrium concentration of electrons in the substrate (base). Similarly, the concentration of electrons in the substrate at the drain np(L) is

From (1.3 l), the drain current due to the diffusion of electrons in the substrate is

where D, is the diffusion constant for electrons, and A is the cross-sectional area in which the diffusion current flows. The area A is the product of the transistor width W and the thickness X of the region in which IDflows. Substituting (1.243) and (1.244) into (1.245) and rearranging gives W ID= -qXD,np, exp L

In weak inversion, the surface potential is approximately a linear function of the gatesource voltage.36 Assume that the charge stored at the oxide-silicon interface is independent of the surface potential. Then, in weak inversion, changes in the surface potential A+, are controlled by changes in the gate-source voltage AVGs through a voltage divider between the oxide capacitance C,, and the depletion-region capacitance Cj,. Therefore,

in which n = (1 + Cj,ICo,) and X in (1.247) and integrating gives

=

Cj,ICo,, as defined in (1.197). Separating variables

where kl is a constant. Equation 1.248 is valid only when the transistor operates in weak inversion. When VGS = Vt with VSB = 0, = 24f by definition of the threshold voltage. For VGS > Vt, the inversion layer holds the surface potential nearly constant and

1.8 Weak Inversion in MOS Transistors

67

(1.248) is not valid. Since (1.248) is valid only when VGS 5 V t , (1.248) is rewritten as follows:

where k2 = kl

+ Vtln.Substituting (1.249) into (1.246) gives

W ID = -qXDnnpo exp - exp V L

( ) (

)[

v ~ v, s 1 -exp

(--?)l

Let It

=

:( )

qXDnnp0exp -

represent the drain current with VGS= Vt, W / L = 1, and VDs >> V T .Then

Figure 1.43 plots the drain current versus the drain-source voltage for three values of the overdrive, with W = 20 pm, L = 20 pm, n .= 1.5, and It = 0.1 pA. Notice that the drain current is almost constant when VDs > 3VT because the last term in (1.252) approaches unity in this case. Therefore, unlike in strong inversion, the minimum drainsource voltage required to force the transistor to operate as a current source in weak inversion is independent of the overdrive.37 Figure 1.43 and Equation 1.252 also show that the drain current is not zero when VGS 5 V t . TO further illustrate this point, we show measured NMOS characteristics plotted on two different scales in Fig. 1.44. In Fig. 1.44a, versus VGSin the active region plotted on linear scales. For this device, we show W = 20 pm, L = 20 pm, and short-channel effects are negligible. (See Problem 1.21 for an example of a case in which short-channel effects are important.) The resulting straight line shows that the device characteristic is close to an ideal square law. Plots like the one in Fig. 1 . 4 4 are ~ commonly used to obtain Vt by extrapolation (0.7 V in this case) and also k' from the slope of the curve (54 p N v 2 in this case). Near the threshold voltage, the curve deviates from the straight line representing the square law. This region is weak inversion. The data are plotted a second time in Fig. 1.44b on log-linear scales. The straight line obtained for VGS < V t fits (1.252) with n = 1.5. For ID < 10-l2 A, the slope decreases because leakage currents are significant and do not follow (1.252).

6

Figure 1.43 Drain current versus drain-source voltage in weak inversion.

68

Chapter 1


v,,

=5v

W = 20 pm L=20pm

2

l 3

I 4

I

5

Figure 1.44 ( a )Mea-

-

VG, (V)

Extrapolated V, = 0.7 V

(4

sured NMOS transfer characteristic in the active region plotted on linear scales as versus VG,, showing the square-law characteristic.

ID (A)

104 -

v,,

=5v

W = 20 pm L = 20 pm

vGS(V)

Figure 1.44 (b) Data from Fig. 1 . 4 4 ~plotted on loglinear scales showing the exponential characteristic in the subthreshold region.

(b)

The major use of transistors operating in weak inversion is in very low power applications at relatively low signal frequencies. The limitation to low signal frequencies occurs because the MOSFET fT becomes very small. This result stems from the fact that the small-signal gm calculated from (1.252) becomes proportional to ID and therefore very small in weak inversion, as shown next.

1.8.2 Transconductance and Transition Frequency in Weak Inversion Calculating d l ~ l d from V ~ ~(1.252) and using (1.247) gives

1.8 Weak Inversion in MOS Transistors

69

The transconductance of an MOS transistor operating in weak inversion is identical to that of a corresponding bipolar transistor, as shown in (1.182), except for the factor of lln = CoxI(Cj, + C,,). This factor stems from a voltage divider between the oxide and depletion capacitors in the MOS transistor, which models the indirect control of the gate on the surface potential. From (1.253), the ratio of the transconductance to the current of an MOS transistor in weak inversion is

Equation 1.254 predicts that this ratio is independent of the overdrive. In contrast, (1.18 1) predicts that the ratio of transconductance to current is inversely proportional to the overdrive. Therefore, as the overdrive approaches zero, (1.18 1) predicts that this ratio becomes infinite. However, (1.181) is valid only when the transistor operates in strong inversion. To estimate the overdrive required to operate the transistor in strong inversion, we will equate the g m l I ratios calculated in (1.254) and (1.18 1). The result is

which is about 78 mV at room temperature with n = 1.5. Although this analysis implies that the transition from weak to strong inversion occurs abruptly, a nonzero transition width occurs in practice. Between weak and strong inversion, the transistor operates in a region of moderate inversion, where both diffusion and drift currents are ~ i g n i f i c a n t . ~ ~ Figure 1.45 plots the transconductance-to-current ratio versus overdrive for an example case with n = 1.5. When the overdrive is negative but high enough to cause depletion at the surface, the transistor operates in weak inversion and the transconductance-tocurrent ratio is constant, as predicted by (1.254). When VGS- Vr = 0, the surface potential is 2+ f , which means that the surface concentration of electrons is equal to the bulk concentration of holes. This point is usually defined as the upper bound on the region of weak inversion. When VGS- Vt > 2 n V ~ the , transconductance-to-current ratio is given by (1.181), assuming that velocity saturation is negligible. If velocity saturation is significant, (1.236) should be used instead of (1.18 1) both to predict the transconductanceto-current ratio and to predict the overdrive required to operate in strong inversion. For 0 5 VGS- Vt 5 2nVT, the transistor operates in moderate inversion. Because simple models for moderate inversion are not known in practice, we will ignore this region in

1

(moderatr nvr From (1.254) with n = 1.5 (weak inversion)

I

-)l51

10

,

/

Il

From (1.181)

I

5 0 -0.5

L

-0.25

0 2nVr VG, - v,(V)

0.25

0.5

Figure l .45 Tranrconductanceto-current ratio versus overdrive.

Chapter 1


the remainder of this book and assume that MOS transistors operate in weak inversion for overdrives less than the bound given in (1.255). Equation 1.208 can be used to find the transition frequency. In weak inversion, C,, = Cgd = 0 because the inversion layer contains little charge.39 However, Cgbcan be thought of as the series combination of the oxide and depletion capacitors. Therefore,

Substituting (1.253) and (1.256) into (1.208) gives

Let IM represent the maximum drain current that flows in the transistor in weak inversion. Then

where I, is given in (1.251). Multiplying numerator and denominator in (1.257) by IM and using (1.258) gives

From (1.251), It

D,. Using the Einstein relationship D,

=

p,Vr gives

Equation 1.260 shows that the transition frequency for an MOS transistor operating in weak inversion is inversely proportional to the square of the channel length. This result is consistent with (1.209) for strong inversion without velocity saturation. In contrast, when velocity saturation is significant, the transition frequency is inversely proportional to the channel length, as predicted by (1.241). Equation 1.260 also shows that the transition frequency in weak inversion is independent of the overdrive, unlike the case in strong inversion without velocity saturation, but like the case with velocity saturation. Finally, a more detailed analysis shows that the constant of proportionality in (1.260) is approximately unity.39 EXAMPLE Calculate the overdrive and the transition frequency for an NMOS transistor with ID = 1 pA, It = 0.1 pA, and VDs >> V r . Device parameters are W = 10 pm, L = 1 pm, n = 1.5, k' = 200 ~ A / v and ~ , to, = 100 A . Assume that the temperature is 27•‹C. From (1.166), if the transistor operates in strong inversion,

1.9 Substrate Current Flow in MOS Transistors

71

Since the value of the overdrive calculated by (1.166) is less than 2nVT -- 78 mV, the overdrive calculated previously is not valid except to indicate that the transistor does not operate in strong inversion. From (1.252), the overdrive in weak inversion with VDs >> VT is V,,

=

:( 4)

nVTln --

=

(1.5)(26 mV) ln

From (1L?%),

From (1.247), Cjs = (n - l)Cox = (0.5)COx From (1.256),

-

cgs+ cgb+ cgd

Cgb = W L

cox(o.~cox) = WL-c o x C,, 0.5COx 3

+

From (1.208), 1

26 = 360 MHz 271. 11.5fF Although 360 MHz may seem to be a high transition frequency at first glance, this result should be compared with the result of the example at the end of Section 1.6, where the same transistor operating in strong inversion with an overdrive of 3 16 mV had a transition frequency of 3.4 GHz. fT = GO'

=

-

1.9 Substrate Current Flow in MOS Transistors In Section 1.3.4, the effects of avalanche breakdown on bipolar transistor characteristics were described. As the reverse-bias voltages on the device are increased, carriers traversing the depletion regions gain sufficient energy to create new electron-hole pairs in lattice collisions by a process known as impact ionization. Eventually, at sufficient bias voltages, the process results in large avalanche currents. For collector-base bias voltages well below the breakdown value, a small enhanced current flow may occur across the collectorbase junction due to this process, with little apparent effect on the device characteristics. Impact ionization also occurs in MOS transistors but has a significantly different effect on the device characteristics. This difference is because the channel electrons (for the NMOS case) create electron-hole pairs in lattice collisions in the drain depletion region, and some of the resulting holes then flow to the substrate, creating a substrate current. (The electrons created in the process flow out the drain terminal.) The carriers created by impact ionization are therefore not confined within the device as in a bipolar transistor. The effect of this phenomenon can be modeled by inclusion of a controlled current generator

72

Chapter 1


Figure 1.46 Representation of impact ionization in an MOSFET by a drain-substrate current generator.

IDBfrom drain to substrate, as shown in Fig. 1.46 for an NMOS device. The magnitude of this substrate current depends on the voltage across the drain depletion region (which determines the energy of the ionizing channel electrons) and also on the drain current (which is the rate at which the channel electrons enter the depletion region). Empirical investigation has shown that the current IDBcan be expressed as

where K I and K2 are process-dependent parameters and VDs(act) is the minimum value of VDsfor which the transistor operates in the active region.40 Typical values for NMOS devices are K1 = 5 V-l and KZ = 30 V. The effect is generally much less significant in PMOS devices because the holes carrying the charge in the channel are much less efficient in creating electron-hole pairs than energetic electrons. The major impact of this phenomenon on circuit performance is that it creates a parasitic resistance from drain to substrate. Because the common substrate terminal must always be connected to the most negative supply voltage in the circuit, the substrate of an NMOS device in a p-substrate process is an ac ground. Therefore, the parasitic resistance shunts the drain to ac ground and can be a limiting factor in many circuit designs. Differentiating (1.261), we find that the drain-substrate small-signal conductance is

where the gate and the source are assumed to be held at fixed potentials.

EXAMPLE Calculate rdb = l / g d b for VDS = 2 V and 4 V, and compare with the device r,. Assume ID = 100 pA, A = 0.05 V-', VDs(act) = 0.3 V, K1 = 5 V-', and KZ = 30 V. For VDs = 2 V, we have from (1.261) IDB = 5 X 1.7 X 100 X 1 0 - ~X exp

From (1.262),

and thus

(

);.:

- -

= 1.8 X 10-l1 A

A. 1 . l SUMMARY OF ACTIVE-DEVICE PARAMETERS

73

This result is negligibly large compared with 1 1 = 200 ka AID 0.05 X 100 X 10P6

T o = - -

However, for VDs

=

4 V,

ID = 5B X 3.7 X 100 X I O - ~ X exp

( );.; -

-

5.6

X

1oP7A

The substrate leakage current is now about 0.5 percent of the drain current. More important, we find from (1.262) gdb

' :

30 X 5.6 X 10P7 A = 1.2 X 1oP63.72 v

and thus

D

This parasitic resistor is now comparable to r, and can have a dominant effect on highoutput-impedance MOS current mirrors, as described in Chapter 4.

APPENDIX A. 1.1 SUMMARY OF ACTIVE-DEVICE PARAMETERS (a) npn Bipolar Transistor Parameters

Quantity

Formula

Large-Signal Forward-Active Operation Collector current

Vbe I, = I, exp VT

Small-Signal Forward-Active Operation q k kT

Transconductance

g m = - -

Transconductance-to-current ratio

&=

Input resistance

rT

Ic

=

Ic VT

2VT PO gm

Output resistance Collector-base resistance Base-charging capacitance Base-emitter capacitance Emitter-base junction depletion capacitance

r p = Pore to %oro Cb = T ~ g m C, = Cb + C j e C j , = 2Cjeo

74 Chapter 1


(continued) Quantity

Formula

Small-Signal Forward-Active Operation Collector-substrate junction capacitance

C,,

(1-

gm

1

Transition frequency

fT

Effective transit time

Er

c m 0

=

=

c,, c

1 2 ~f T

-= T F + - + Y

TT=

Rm

Rm

Maximum gain

(b) NMOS Transistor Parameters Quantity

Formula

Large-Signal Operation Drain current (active region) Drain current (triode region) Threshold voltage Threshold voltage parameter

1

y = - J m cox

Oxide capacitance

C,,

=

E"" to,

=

3.45 fFIprn2for to, = 100 A

Small-Signal Operation (Active Region)

C

Top-gate transconductance

W g m = ~ C O X ~ ( V G S - V 2~ I)~=~ c o . x -

Transconductance-to-current ratio

-

2 VCS- vr

gm ID

Body-effect transconductance Channel-length modulation parameter

A

1

1 dXd Leff ~ V D S

= - = --

VA

Output resistance Effective channel length Maximum gain Source-body depletion capacitance

Csb =

CSb0

Problems

75

(continued) Quantity

Formula

Small-Signal Operation (Active Region) Drain-body depletion capacitance

C d b0

Cdb =

+

(l

Gate-source capacitance

c,,

=

2)"'

2 -WLC,, 3

Transition frequency

PROBLEMS l . l (a) Calculate the built-in potential, depletion-layer depths, and maximum field in a plane-abrupt pn junction in silicon with doping densities NA = 8 X l O I 5 atoms/cm3 and No = 1017 atoms/cm3. Assume a reverse bias of S V. (b) Repeat (a) for zero external bias and 0.3 V fonvard bias. 1.2 Calculate the zero-bias junction capacitance for the example in Problem 1.1, and also calculate the value at 5 V reverse bias and 0.3 V forward bias. Assume a junction area of 2 X 10-5 cm2. 1.3 Calculate the breakdown voltage for the junction of Problem 1. l if the critical field is = 4 X 105V/cm. 1.4 If junction curvature causes the maximum field at a practical junction to be 1.S times the theoretical value, calculate the doping density required to give a breakdown voltage of 150 V with an abrupt pn junction in silicon. Assume that one side of the junction is much more heavily doped than the other = 3 X 105V/cm. and 1.5 If the collector doping density in a transistor is 6 X 1015 atoms/cm3, and is much less than the base doping, find BVcEo for pF = 200 and n = 4. Use %", = 3 X 105V/cm. 1.6 Repeat Problem 1.S for a doping density of 10i5atoms/cm3 and pF = 400. 1.7(a) Sketch the Ic-VcE characteristics in the forward-active region for an npn transistor with PF = 100 (measured at low V C ~ )V,A = 50 V, BVc~o= 120 V, and n = 4. Use

where M is given by (1.78). Plot Zc from 0 to 10 mA and V C Efrom 0 to 50 V. Use IB = 1 pA, 10 FA, 30 FA, and 60 FA. (b) Repeat (a), but sketch VCEfrom 0 to 10 V. 1.8 Derive and sketch the complete smallsignal equivalent circuit for a bipolar transistor at Ic = 0.2 mA, VcB = 3 V, Vcs = 4 V. Device parameters are Cjeo = 20 fF, CPo = 10 fF, ccs0 = 2 0 ~ p =0 1 0 0 , ~ = ~i 5 P s , q = 1 0 - ~ , rb = 200 a , r, = 100 0 , r,, = 4 R , and r, = 5por,. Assume Q !,I = 0.55 V for all junctions. 1.9 Repeat Problem 1.8 for Ic = 1 mA, V- = l V , a n d Vcs = 2 V . 1.10 Sketch the graph of small-signal, common-emitter current gain versus frequency on log scales from 0.1 MHz to 1000 MHz for the examples of Problems 1.8 and 1.9. Calculate the fT of the device in each case. 1.1 1 An integrated-circuit npn transistor has the following measured characteristics: rb = loo a , r, = loo a, p, = loo, r, = 50 k a at Ic = 1 mA, fT = 600 MHz with Ic = 1 mA and V C B= 10 V, fT = 1 GHz with Ic = 10 mA and VcB = 10 V, C, = 0.15 pF with V C B = 10 V, and C,, = 1 pF with Vcs = 10 V. Assume $0 = 0.55 V for all junctions, and assume C,, is constant in the forward-bias region. Use r, = 5poro. (a) Form the complete small-signal equivalent circuit for this transistor at Ic = 0.1 mA, 1 mA, and 5 mA with VcB = 2 V and Vcs = 15 V. (b) Sketch the graph of fT versus Ic for this transistor on log scales from 1 p A to 10 mA with V C B= 2 V.

1

76 Chapter 1


1.12 A lateral pnp transistor has an effective base width of 10 p m ( l p m = 10-4 cm). (a) If the emitter-base depletion capacitance is 2 pF in the forward-bias region and is constant, calculate the device fT at Ic = -0.5 mA. (Neglect C,.) Also, calculate the minority-carrier charge stored in the base of the transistor at this current level. Data : Dp = 13 cm2/s in silicon. (b) If the collector-base depletion layer width changes 0.11 p m per volt of V C E calculate , r, for this transistor at Ic = -0.5 mA. 1.13 If the area of the transistor in Problem 1.11 is effectively doubled by connecting two transistors in parallel, which model parameters in the smallsignal equivalent circuit of the composite transistor would differ from those of the original device if the total collector current is unchanged? What is the relationship between the parameters of the composite and original devices? 1.14 An integrated npn transistor has the following characteristics: r~ = 0.25 ns, small-signal, short-circuit current gain is 9 with Ic = 1 mA at f = 50 MHz, V A = 40 V, PO = 100, rh = 1 5 0 R , r , = 1 5 0 R , C, = 0.6pF,C,, = 2 p F a t the bias voltage used. Determine all elements in the small-signal equivalent circuit at Ic = 2 mA and sketch the circuit. 1.15 An NMOS transistor has parameters W = 10 pm, L = 1 pm, k' = 194 p N V 2 , A = 0.024 V-', to, = 80A, c$f = 0.3 V, Vro = 0.6 V, and N A = 5 X 10IS atoms/cm3. Ignore velocity saturation effects. (a) Sketch the ID-VDScharacteristics for VDs from 0 to 3 V and Vcs = 0.5 V, 1.S V, and 3 V. Assume VsB = 0. (b) Sketch the ID-VGs characteristics for VDs = 2 V as VGSvaries from 0 to 2 V with V S B = 0,0.5 V, and 1 V. 1.16 Derive and sketch the complete smallsignal equivalent circuit for the device of Problem 1.15 with VGS = 1 V, VDS= 2V,and V S B= 1 V. Use $0 = 0.7 V, CsbO= CdbO= 20 fF,and Cgb = 5 fF.Overlap capacitance from gate to source and gate to drain is 2 fF.

1.17 Use the device data of Problems 1.15 and 1.16 to calculate the frequency of unity current gain of this transistor with VDs = 3 V, Vss = 0 V, VGS = 1 V, 1.5 V, and 2 V. 1.18 Examine the effect of velocity saturation on MOSFET characteristics by plotting ID - VDs curves for Vcs = 1 V, 2 V, and 3 V, and VDs = 0 to 3 V in the following cases, and by comparing the results with and without inclusion of velocity saturation effects. Assume V s s = 0, Vto = 0.6 V, k' = 194 A = 0, and'&, = 1.5 X 106Vlm. (a) W = 100 p m and L = 10 pm. (b) W = 10 p m and L = 1 pm. (C) W = 5 p m a n d L = 0.5pm. 1.19 Consider an NMOS transistor with W = 2 pm, L = 0.5 pm, k' = 194 pA/V2, A = 0, Vro = 0.6 V, and 8, = 1.5 X 106 Vlm. Compare the drain current predicted by the model of Fig. 1.41 to the drain current predicted by direct calculation using the equations including velocity saturation for VGSfrom 0 to 3 V. Assume VDs = 3 V and VsB = 0. For what range of VGSis the model of Fig. 1.41 accurate within 10 percent? 1.20 Calculate the transconductance of an n-channel MOSFET with W = 10 pm, p, = 450 cm2/(v-S), and 8, = 1.5 X 106 V/m using channel lengths from 10 p m to 0.4 pm. Assume that t,, = L150 and that the device operates in the active region with VGS- V t = 0.1 V. Compare the result to a calculation that ignores velocity saturation. For what range of channel lengths is the model without velocity saturation accurate within 10 percent? 1.21 Plot & versus VGS for an n-channel MOSFET with W = 1 pm, L = 1 pm, k' = 54 p m 2 , h = 0, VDS = 5 V, V S B = 0, Vto = 0.7 V, and 8, = 1.5 X 106 Vlm. Ignore subthreshold conduction. Compare the plot with Fig. 1.441 and explain the main difference for large VGS. 1.22 Calculate the transconductance of an nchannel MOSFET at ID = 10 nA and V D =~ 1 V, assuming subthreshold operation and n = 1.5. AsCKd Cgb) = 10 fF,calculate the suming (C,, corresponding device fT .

+

+

REFERENCES 1. P. E. Gray, D. DeWitt, A. R. Boothroyd, J. F. Gibbons. Physical Electronics and Circuit Models of Transistors. Wiley, New York, 1964, p. 20.

2. H. C. Poon and H. K. Gummel. "Modeling of Emitter Capacitance," Proc. IEEE, Vol. 57, pp. 218 1-2182, December 1969.

General References 77

3. B. R. Chawla and H. K. Gummel. "Transition Region Capacitance of Diffused pn Junctions," IEEE Trans. Electron Devices, Vol. ED-18, pp. 178-195, March 1971. 4. S. L. Miller. "Avalanche Breakdown in Germanium," Phys. Rev., Vol. 99, p. 1234, 1955. 5. A. S. Grove. Physics and Technology of Semiconductor Devices. Wiley, New York, 1967, Ch. 6. 6. A. S. Grove. Op. cit., Ch. 4. 7. A. S. Grove. Op. cit., Ch. 7. 8. P. E. Gray et al. Op. cit., p. 10. 9. P. E. Gray et al. Op. cit., p. 129. 10. P. E. Gray et al. Op. cit., p. 180. 11. B. A. McDonald. "Avalanche Degradation of hFE,"IEEE Trans. Electron Devices, Vol. ED17, pp. 871-878, October 1970. 12. H. DeMan. "The Influence of Heavy Doping on the Emitter Efficiency of a Bipolar Transistor," IEEE Trans. Electron Devices, Vol. ED-18, pp. 833-835, October 1971. 13. R. J. Whittier and D. A. Tremere. "Current Gain and Cutoff Frequency Falloff at High Currents," IEEE Trans. Electron Devices, Vol. ED-16, pp. 39-57, January 1969. 14. J. L. Moll and I. M. Ross. "The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity," Proc. IRE, Vol. 44, p. 72, 1956. 15. P. E. Gray et al. Op. cit., Ch. 8. 16. R. S. Muller andT. I. Kamins. Device Electronicsfor Integrated Circuits. Second Edition, Wiley, New York, 1986, p. 386. 17. Y. P. Tsividis. Operation and Modeling of the MOS Transistor. McGraw-Hill, New York, 1987, p. 141. 18. D. Frohman-Bentchkowsky and A. S. Grove. "Conductance of MOS Transistors in Satu-

ration," IEEE Trans. Electron Devices, Vol. ED- 16, pp. 108-113, January 1969. 19. S. M. Sze. Physics of Semiconductor Devices. Second Edition, Wiley, New York, 1981, pp. 451-452. 20. R. S. Muller and T. I. Kamins. Op. cit., p. 17. 21. Y. P. Tsividis. Op. cit., p. 148. 22. R. S. Muller and T. I. Kamins. Op. cit., pp. 490496. 23. Y. P. Tsividis. Op. cit., pp. 150-151 and 198-200. 24. R. S. Muller and T. I. Kamins. Op. cit., p. 496. 25. Y. P. Tsividis. Op. cit., p. 151. 26. Y. P. Tsividis. Op. cit., pp. 310-328. 27. R. S. Muller and T. I. Kamins. Op. cit., p. 480. 28. R. S. Muller and T. I. Kamins. Op. cit., p. 482. 29. Y. P. Tsividis. Op. cit., p. 181. 30. Y. P. Tsividis. Op. cit., p. 294. 31. Y. P. Tsividis. Op. cit., p. 142. 32. R. S. Muller and T. I. Kamins. Op. cit., p. 484. 33. Y. P. Tsividis. Op. cit., p. 146. 34. S. M. Sze. Op. cit., p. 446. 35. Y. P. Tsividis. Op. cit., p. 136. 36. Y. P. Tsividis. Op. cit., p. 83. 37. Y. P. Tsividis. Op. cit., p. 139. 38. Y. P. Tsividis. Op. cit., p. 137. 39. Y. P. Tsividis. Op. cit., p. 324. 40. K. Y. Toh, P. K. KO,and R. G. Meyer. "An Engineering Model for Short-Channel MOS Devices," IEEE Journal of Solid-State Circuits, Vol. 23, pp. 950-958, August 1988. '

GENERAL REFERENCES I. Getreu. Modelling the Bipolar Transistor. Tektronix Inc., 1976. P. E. Gray and C. L. Searle, Electronic Principles. Wiley, New York, 1969.

R. S. Muller and T. I Kamins. Device Electronics for Integrated Circuits. Wiley, New York, 1986. Y. P. Tsividis. Operation and Modeling of the MOS Transistor. McGraw-Hill, New York, 1987.

2.2 Basic Processes in Integrated-CircuitFabrication

79

2.2 Basic Processes in Integrated-Circuit Fabrication The fabrication of integrated circuits and most modern discrete component transistors is based on a sequence of photomasking, diffusion, ion implantation, oxidation, and epitaxial growth steps applied to a slice of silicon starting material called a Before beginning a description of the basic process steps, we will first review the effects produced on the electrical properties of silicon by the addition of impurity atoms.

2.2.1 Electrical Resistivity of Silicon The addition of small concentrations of n-type or p-type impurities to a crystalline silicon sample has the effect of increasing the number of majority carriers (electrons for n-type, holes for p-type) and decreasing the number of minority carriers. The addition of impurities is called doping the sample. For practical concentrations of impurities, the density of majority carriers is approximately equal to the density of the impurity atoms in the crystal. Thus for n-type material, ND (2.1) n,

-

where n, (cm-3) is the equilibrium concentration of electrons and ND (cmp3) is the concentration of n-type donor impurity atoms. For p-type material,

where pp (cmp3) is the equilibrium concentration of holes and N A (cmp3) is the concentration of p-type acceptor impurities. Any increase in the equilibrium concentration of one type of carrier in the crystal must result in a decrease in the equilibrium concentration of the other. This occurs because the holes and electrons recombine with each other at a rate that is proportional to the product of the concentration of holes and the concentration of electrons. Thus the number of recombinations per second, R, is given by R

=

ynp

where y is a constant, and n andp are electron and hole concentrations, respectively, in the silicon sample. The generation of the hole-electron pairs is a thermal process that depends only on temperature; the rate of generation, G, is not dependent on impurity concentration. In equilibrium, R and G must be equal, so that G If no impurities are present, then

=

constant

=

R

=

ynp

(2.4)

where ni (cmp3)is the intrinsic concentration of carriers in a pure sample of silicon. Equations 2.4 and 2.5 establish that, for any impurity concentration, y n p = constant = nf, and thus n p = $(T) (2.6) Equation 2.6 shows that as the majority carrier concentration is increased by impurity doping, the minority carrier concentration is decreased by the same factor so that product np is constant in equilibrium. For impurity concentrations of practical interest, the majority carriers outnumber the minority carriers by many orders of magnitude. The importance of minority- and majority-carrier concentrations in the operation of the transistor was described in Chapter 1.Another important effect of the addition of impurities

2.2 Basic Processes in Integrated-Circuit Fabrication

79

2.2 Basic Processes in Integrated-Circuit Fabrication The fabrication of integrated circuits and most modern discrete component transistors is based on a sequence of photomasking, diffusion, ion implantation, oxidation, and epitaxial growth steps applied to a slice of silicon starting material called a Before beginning a description of the basic process steps, we will first review the effects produced on the electrical properties of silicon by the addition of impurity atoms.

2.2.1 Electrical Resistivity of Silicon The addition of small concentrations of n-type or p-type impurities to a crystalline silicon sample has the effect of increasing the number of majority carriers (electrons for n-type, holes for p-type) and decreasing the number of minority carriers. The addition of impurities is called doping the sample. For practical concentrations of impurities, the density of majority carriers is approximately equal to the density of the impurity atoms in the crystal. Thus for n-type material, (2.1) n, = ND where n, (cmp3)is the equilibrium concentration of electrons and No (cmp3) is the concentration of n-type donor impurity atoms. For p-type material,

where pp (cmp3) is the equilibrium concentration of holes and NA (cmp3)is the concentration of p-type acceptor impurities. Any increase in the equilibrium concentration of one type of carrier in the crystal must result in a decrease in the equilibrium concentration of the other. This occurs because the holes and electrons recombine with each other at a rate that is proportional to the product of the concentration of holes and the concentration of electrons. Thus the number of recombinations per second, R, is given by R

=

ynp

(2.3)

where y is a constant, and n andp are electron and hole concentrations, respectively, in the silicon sample. The generation of the hole-electron pairs is a thermal process that depends only on temperature; the rate of generation, G, is not dependent on impurity concentration. In equilibrium, R and G must be equal, so that G If no impurities are present, then

=

constant

=

R = ynp

where ni (cm-3) is the intrinsic concentration of carriers in a pure sample of silicon. Equations 2.4 and 2.5 establish that, for any impurity concentration, y np = constant = n;, and thus (2.6) n p = n!(~) Equation 2.6 shows that as the majority carrier concentration is increased by impurity doping, the minority carrier concentration is decreased by the same factor so that product np is constant in equilibrium. For impurity concentrations of practical interest, the majority carriers outnumber the minority carriers by many orders of magnitude. The importance of minority- and majority-carrier concentrations in the operation of the transistor was described in Chapter 1. Another important effect of the addition of impurities

80

Chapter 2

10 1014

Bipolar, MOS, a n d BiCMOS Integrated-Circuit Technology

loi5

1oi6 10" 1 0 ' ~ 10'' 10" Total impurity concentration (cm3)

10"

Figure 2.1 Hole and electron mobility as a function of doping in silicon3

is an increase in the ohmic conductivity of the material itself. This conductivity is given by where pn (cm2N-S) is the electron mobility, p p (cm2/V-S) is the hole mobility, and a (0-cm)-' is the electrical conductivity. For an n-type sample, substitution of (2.1) and (2.6) in (2.7) gives

For a p-type sample, substitution of (2.2) and (2.6) in (2.7) gives

The mobility p is different for holes and electrons and is also a function of the impurity concentration in the crystal for high impurity concentrations. Measured values of mobility in silicon as a function of impurity concentration are shown in Fig. 2.1. The resistivity p (&cm) is usually specified in preference to the conductivity, and the resistivity of n- and p-type silicon as a function of impurity concentration is shown in Fig. 2.2. The conductivity and resistivity are related by the simple expression p = l l a .

2.2.2 Solid-state Diffusion Solid-state diffusion of impurities in silicon is the movement, usually at high temperature, of impurity atoms from the surface of the silicon sample into the bulk material. During this high-temperature process, the impurity atoms replace silicon atoms in the lattice and are termed substitutional impurities. Since the doped silicon behaves electrically as p-type or n-type material depending on the type of impurity present, regions of p-type and n-type material can be formed by solid-state diffusion. The nature of the diffusion process is illustrated by the conceptual example shown in Figs. 2.3 and 2.4. We assume that the silicon sample initially contains a uniform concentration of n-type impurity of 1015 atoms per cubic centimeter. Commonly used n-type impurities in silicon are phosphorus, arsenic, and antimony. We further assume that by


0.0001 1014

Boron

10'5

1

1016 10" 1018 Impurity concentration (cm")

ly

loi9

1oZ0

81

Figure 2.2 Resistivity of p- and n-type silicon as a function of impurity c~ncentration.~

n-type sample

Impurity concentration, atoms/cm3

(pm)

Figure 2.3 An n-type silicon sample with boron deposited on the surface.

some means we deposit atoms of p-type impurity on the top surface of the silicon sample. The most commonly used p-type impurity in silicon device fabrication is boron. The distribution of impurities prior to the diffusion step is illustrated in Fig. 2.3. The initial placement of the impurity atoms on the surface of the silicon is called the predeposition step and can be accomplished by a number of different techniques. If the sample is now subjected to a high temperature of about 1100•‹Cfor a time of about one hour, the impurities diffuse into the sample, as illustrated in Fig. 2.4. Within the silicon, the regions in which thep-type impurities outnumber the original n-type impurities display p-type electrical behavior, whereas the regions in which the n-type impurities are

82 Chapter 2


Boron atoms diffuse lnto the sample--X

F n-type sample

I


1oi8 1oi7

,

Figure 2.4 Distribution of impurities after Depth, (V) diffusion.

more numerous display n-type electrical behavior. The diffusion process has allowed the formation of a pn junction within the continuous crystal of silicon material. The depth of this junction from the surface varies from 0.1 p m to 20 p m for silicon integrated-circuit diffusions (where 1 p m = 1 micrometer = 1W6 m).

2.2.3 Electrical Properties of Diffused Layers The result of the diffusion process is often a thin layer near the surface of the silicon sample that has been converted from one impurity type to another. Silicon devices and integrated circuits are constructed primarily from these layers. From an electrical standpoint, if the pn junction formed by this diffusion is reverse biased, then the layer is electrically isolated from the underlying material by the reverse-biased junction, and the electrical properties of the layer itself can be measured. The electrical parameter most often used to characterize such layers is the sheet resistance. To define this quantity, consider the resistance of a uniformly doped sample of length L, width W, thickness T, and n-type doping concentration No, as shown in Fig. 2.5. The resistance is

Figure 2.5 Rectangular sample for calculation of sheet resistance.


83

Substitution of the expression for conductivity a from (2.8) gives

Quantity R. is the sheet resistance of the layer and has units of Ohms. Since the sheet resistance is the resistance of any square sheet of material with thickness T, its units are often given as Ohms per square (illEl)rather than simply Ohms. The sheet resistance can be written in terms of the resistivity of the material, using (2.8), as

The diffused layer illustrated in Fig. 2.6 is similar to this case except that the impurity concentration is not uniform. However, we can consider the layer to be made up of a parallel combination of many thin conducting sheets. The conducting sheet of thickness d x at depth X has a conductance

To find the total conductance, we sum all the contributions.

Inverting (2.13),we obtain

Comparison of (2.10) and (2.14) gives Rg

=

[Io''

-1 q p n N o ( x ) d*]

- 1;'

-1

[ q ~ n ND(x) d x ]


t

A

L-

Net impurity concentration, ND(4 - N k ) =N D ( ~

X.

A'

Figure 2.6 Calculation of the resistance o f a diffused layer.

Chapter 2

Bipolar, MOS, and BiCMOS Integrated-Circuit Technology

where p,, is the average mobility. Thus (2.10) can be used for diffused layers if the appropriate value of R. is used. Equation 2.15 shows that the sheet resistance of the diffused layer depends on the total number of impurity atoms in the layer per unit area. The depth xj in (2.13), (2.14), and (2.15) is actually the distance from the surface to the edge of the junction depletion layer, since the donor atoms within the depletion layer do not contribute to conduction. Sheet resistance is a useful parameter for the electrical characterization of diffusion processes and is a key parameter in the design of integrated resistors. The sheet resistance of a diffused layer is easily measured in the laboratory; the actual evaluation of (2.15) is seldom necessary. EXAMPLE

Calculate the resistance of a layer with length 50 p m and width 5 p m in material of sheet resistance 200 WO. From (2.10)

Note that this region constitutes 10 squares in series, and R is thus 10 times the sheet resistance. In order to use these diffusion process steps to fabricate useful devices, the diffusion must be restricted to a small region on the surface of the sample rather than the entire planar surface. This restriction is accomplished with photolithography.

2.2.4 Photolithography When a sample of crystalline silicon is placed in an oxidizing environment, a layer of silicon dioxide will form at the surface. This layer acts as a barrier to the diffusion of impurities, so that impurities separated from the surface of the silicon by a layer of oxide do not diffuse into the silicon during high-temperature processing. A p n junction can thus be formed in a selected location on the sample by first covering the sample with a layer of oxide (called an oxidation step), removing the oxide in the selected region, and then performing a predeposition and diffusion step. The selective removal of the oxide in the desired areas is accomplished with photolithography. This process is illustrated by the conceptual example of Fig. 2.7. Again we assume the starting material is a sample of ntype silicon. We first perform an oxidation step in which a layer of silicon dioxide (SO2) is thermally grown on the top surface, usually of thickness of 0.2 p m to 1 pm. The wafer following this step is shown in Fig. 2 . 7 ~ Then . the sample is coated with a thin layer of photosensitive material called photoresist. When this material is exposed to a particular wavelength of light, it undergoes a chemical change and, in the case of positive photoresist, becomes soluble in certain chemicals in which the unexposed photoresist is insoluble. The sample at this stage is illustrated in Fig. 2.7b. To define the desired diffusion areas on the silicon sample, a photomask is placed over the surface of the sample; this photomask is opaque except for clear areas where the diffusion is to take place. Light of the appropriate wavelength is directed at the sample, as shown in Fig. 2.7c, and falls on the photoresist only in the clear areas of the mask. These areas of the resist are then chemically dissolved in the development step, as shown in Fig. 2.7d. The unexposed areas of the photoresist are impervious to the developer. Since the objective is the formation of a region clear of S O 2 , the next step is the etching of the oxide. This step can be accomplished by dipping the sample in an etching


SiO, / n-type wafer /

85

Mask

Figure 2.7 Conceptual example of the use of photolithography to form a p n junction diode. ( a ) Grow S O z . (b) Apply photoresist. (c) Expose through mask. (6) Develop photoresist. ( e ) Etch Si02 and remove photoresist. ( f ) Predeposit and diffuse impurities.

solution, such as hydrofluoric acid, or by exposing it to an electrically produced plasma in a plasma etcher. In either case, the result is that in the regions where the photoresist has been removed, the oxide is etched away, leaving the bare silicon surface. The remaining photoresist is next removed by a chemical stripping operation, leaving the sample with holes, or windows, in the oxide at the desired locations, as shown in Fig. 2.7e. The sample now undergoes a predeposition and diffusion step, resulting in the formation of p-type regions where the oxide had been removed, as shown in Fig. 2.7f. In some instances, the impurity to be locally added to the silicon surface is deposited by using ion implantation (see Section 2.2.6). This method of insertion can often take place through the silicon dioxide so that the oxide-etch step is unnecessary. The minimum dimension of the diffused region that can be routinely formed with this technique in device production has decreased with time, and at present is approximately 0.2 p m by 0.2 pm. The number of such regions that can be fabricated simultaneously can be calculated by noting that the silicon sample used in the production of integrated circuits is a round slice, typically 4 inches to 12 inches in diameter and 250 p m thick. Thus the number of electrically independent p n junctions of dimension 0.2 p m X 0.2 p m spaced 0.2 p m apart that can be formed on one such wafer is on the order of 10". In actual integrated circuits, a number of masking and diffusion steps are used to form more complex structures such as transistors, but the key points are that photolithography is capable of defining a large number of devices on the surface of the sample and that all of these devices are batch fabricated at the same time. Thus the cost of the photomasking and diffusion steps applied to the wafer during the process is divided among the devices or circuits on the wafer. This ability to fabricate hundreds or thousands of devices at once is the key to the economic advantage of IC technology.

2.2.5 Epitaxial Growth Early planar transistors and the first integrated circuits used only photomasking and diffusion steps in the fabrication process. However, all-diffused integrated circuits had severe

86

Chapter 2

Bipolar, MOS,a n d BiCMOS Integrated-Circuit Technology

p-type substrate Impurity concentration atoms/cm3

l02'

Emitter diffusion ( n )

Base diffusion (p) Collector diffusion (n)

c

Depth X (pm)

Figure 2.8 Triple-diffused transistor and resulting impurity profile.

limitations compared with discrete component circuits. In a triple-diffused bipolar transistor, as illustrated in Fig. 2.8, the collector region is formed by an n-type diffusion into the p-type wafer. The drawbacks of this structure are that the series collector resistance is high and the collector-to-emitter breakdown voltage is low. The former occurs because the impurity concentration in the portion of the collector diffusion below the collector-base junction is low, giving the region high resistivity. The latter occurs because the concentration of impurities near the surface of the collector is relatively high, resulting in a low breakdown voltage between the collector and base diffusions at the surface, as described in Chapter 1. To overcome these drawbacks, the impurity concentration should be low at the collector-base junction for high breakdown voltage but high below the junction for low collector resistance. Such a concentration profile cannot be realized with diffusions alone, and the epitaxial growth technique was adopted as a result. Epitaxial (epi) growth consists of formation of a layer of single-crystal silicon on the surface of the silicon sample so that the crystal structure of the silicon is continuous across the interface. The impurity concentration in the epi layer can be controlled independently and can be greater or smaller than in the substrate material. In addition, the epi layer is often of opposite impurity type from the substrate on which it is grown. The thickness of epi layers used in integrated-circuit fabrication varies from 1 k m to 20 km, and the growth of the layer is accomplished by placing the wafer in an ambient atmosphere containing silicon tetrachloride (SiC14) or silane ( S i b ) at an elevated temperature. A chemical reaction takes place in which elemental silicon is deposited on the surface of the wafer, and the resulting surface layer of silicon is crystalline in structure with few defects if the conditions are carefully controlled. Such a layer is suitable as starting material for the fabrication of bipolar transistors. Epitaxy is also utilized in some CMOS and most BiCMOS technologies.


87

2.2.6 Ion Implantation Ion implantation is a technique for directly inserting impurity atoms into a silicon ~ a f e r . ~ . ~ The wafer is placed in an evacuated chamber, and ions of the desired impurity species are directed at the sample at high velocity. These ions penetrate the surface of the silicon wafer to an average depth of from less than 0.1 pm to about 0.6 km, depending on the velocity with which they strike the sample. The wafer is then held at a moderate temperature for a period of time (for example, 800•‹Cfor 10 minutes) in order to allow the ions to become mobile and fit into the crystal lattice. This is called an anneal step and is essential to allow repair of any crystal damage caused by the implantation. The principal advantages of ion implantation over conventional diffusion are ( l ) that small amounts of impurities can be reproducibly deposited and (2) that the amount of impurity deposited per unit area can be precisely controlled. In addition, the deposition can be made with a high level of uniformity across the wafer. Another useful property of ion-implanted layers is that the peak of the impurity concentration profile can be made to occur below the surface of the silicon, unlike with diffused layers. This allows the fabrication of implanted bipolar structures with properties that are significantly better than those of diffused devices. This technique is also widely applied in MOS technology where small, well-controlled amounts of impurity are required at the silicon surface for adjustment of device thresholds, as described in Section 1S .1. 2.2.7 Local Oxidation In both MOS and bipolar technologies, the need often arises to fabricate regions of the silicon surface that are covered with relatively thin silicon dioxide, adjacent to areas covered by relatively thick oxide. Typically, the former regions constitute the active-device areas, whereas the latter constitute the regions that electrically isolate the devices from each other. A second requirement is that the transition from thick to thin regions must be accomplished without introducing a large vertical step in the surface geometry of the silicon, so that the metallization and other patterns that are later deposited can lie on a relatively planar surface. Local oxidation is used to achieve this result. The local oxidation process begins with a sample that already has a thin oxide grown on it, as shown in Fig. 2 . 9 ~ First . a layer of silicon nitride (SiN) is deposited on the sample and subsequently removed with a masking step from all areas where thick oxide is to be grown, as shown in Fig. 2.9b. Silicon nitride acts as a barrier to oxygen atoms that might otherwise reach the Si-Si02 interface and cause further oxidation, Thus when a subsequent long, hightemperature oxidation step is carried out, a thick oxide is grown in the regions where there is no nitride, but no oxidation takes place under the nitride. The resulting geometry after . that the top surface of the silicon dioxide has a nitride removal is shown in Fig. 2 . 9 ~Note smooth transition from thick to thin areas and that the height of this transition is less than the oxide thickness difference because the oxidation in the thick oxide regions consumes some of the underlying silicon. 2.2.8 Polysilicon Deposition Many process technologies utilize layers of polycrystalline silicon that are deposited during fabrication. After deposition of the polycrystalline silicon layer on the wafer, the desired features are defined by using a masking step and can serve as gate electrodes for silicon-gate MOS transistors, emitters of bipolar transistors, plates of capacitors, resistors,

88

Chapter 2


I

Thick 30, N

SiN

Thin SiO,

SiO,

I

. Figure 2.9 Local oxidation process. (a) Sili-

con sample prior to deposition of nitride. (b) After nitride deposition and definition. (c) After oxidation and nitride removal.

fuses, and interconnect layers. The sheet resistance of such layers can be controlled by the impurity added, much like bulk silicon, in a range from about 20 Q/R up to very high values. The process that is used to deposit the layer is much like that used for epitaxy. However, since the deposition is usually over a layer of silicon dioxide, the layer does not form as a single-crystal extension of the underlying silicon but forms as a granular (or polysilicon) film. Some MOS technologies contain as many as three separate polysilicon layers, separated from one another by layers of S O z .

2.3 High-Voltage Bipolar Integrated-Circuit Fabrication Integrated-circuit fabrication techniques have changed dramatically since the invention of the basic planar process. This change has been driven by developments in photolithography, processing techniques, and also the trend to reduce power-supply voltages in many systems. Developments in photolithography have reduced the minimum feature size attainable from tens of microns to the submicron level. The precise control allowed by ion implantation has resulted in this technique becoming the dominant means of predepositing impurity atoms. Finally, many circuits now operate from 3 V or 5 V power supplies instead of from the I+- 15 V supplies used earlier to achieve high dynamic range in stand-alone integrated circuits, such as operational amplifiers. Reducing the operating voltages allows closer spacing between devices in an IC. It also allows shallower structures with higher frequency capability. These effects stem from the fact that the thickness of junction depletion layers is reduced by reducing operating voltages, as described in Chapter 1. Thus the highest-frequency IC processes are designed to operate from 5-V supplies or less and are generally not usable at higher supply voltages. In fact, a fundamental trade-off exists between the frequency capability of a process and its breakdown voltage. In this section, we examine first the sequence of steps used in the fabrication of highvoltage bipolar integrated circuits using junction isolation. This was the original IC process

2.3 High-Voltage Bipolar Integrated-Circuit Fabrication

89

n+ buried layer

n-type impurities

. . . . . . . . . . . . . .:.....:.....:..... ......... .. ....... .. ......: ..... . . . ..:.....:... . .. .... .... ... .... ... .... ..:.'. ....... p-type substrate . :.': :':':.... .*. .... ... .. .. .. . .. .. . . . .. . . ... ..... .. . . . .. ... . . . . .: ....:.... ... ... . ... ..:... ...... ..... . .. . .. .-.. .- . .. . .. _ . .. .. . . . . . . .. A . . . . . .

.

.

e

a

.

.

.

.

.

.

.

.

Figure 2.10

.

.

.

I

.

.

.

.

.

.

.

.

a

.

.

.

Buried-layer diffusion.

and is useful as a vehicle to illustrate the basic methods of IC fabrication. It is still used in various forms to fabricate high-voltage circuits. The fabrication of a junction-isolated bipolar integrated circuit involves a sequence of from six to eight masking and diffusion steps. The starting material is a wafer of ptype silicon, usually 250 p m thick and with an impurity concentration of approximately 1016 atoms/cm3. We will consider the sequence of diffusion steps required to form an npn integrated-circuit transistor. The first mask and diffusion step, illustrated in Fig. 2.10, forms a low-resistance n-type layer that will eventually become a low-resistance path for the collector current of the transistor. This step is called the buried-layer difision, and the layer itself is called the buried layer. The sheet resistance of the layer is in the range of 20 to 50 010,and the impurity used is usually arsenic or antimony because these impurities diffuse slowly and thus do not greatly redistribute during subsequent processing. After the buried-layer step, the wafer is stripped of all oxide and an epi layer is grown, as shown in Fig. 2.11. The thickness of the layer and its n-type impurity concentration determine the collector-base breakdown voltage of the transistors in the circuit since this material forms the collector region of the transistor. For example, if the circuit is to operate at a power-supply voltage of 36 V, the devices generally are required to have BVcEo breakdown voltages above this value. As described in Chapter l , this implies that the plane breakdown voltage in the collector-base junction must be several times this value because of the effects of collector avalanche multiplication. For BVcEo = 36 V, a collectorbase plane breakdown voltage of approximately 90 V is required, which implies an impurity concentration in the collector of approximately 1015 atoms/cm3 and a resistivity of S fl-cm. The thickness of the epitaxial layer then must be large enough to accommodate the depletion layer associated with the collector-base junction. At 36 V, the results of Chapter 1 can be used to show that the depletion-layer thickness is approximately 6 pm. Since the buried layer diffuses outward approximately 8 p m during subsequent processing, and the base diffusion will be approximately 3 k m deep, a total epitaxial layer thickness of 17 p m is required for a 36-V circuit. For circuits with lower operating voltages, thinner and more heavily doped epitaxial layers are used to reduce the transistor collector series resistance, as will be shown later. Following the epitaxial growth, an oxide layer is grown on the top surface of the epitaxial layer. A mask step and boron (p-type) predeposition and diffusion are performed, resulting in the structure shown in Fig. 2.12. The function of this diffusion is to isolate the collectors of the transistors from each other with reverse-biased p n junctions, and it

Figure 2.1 1

Bipolar integrated-circuit wafer following epitaxial growth.

90

Chapter 2

Bipolar, MOS, a n d BiCMOS Integrated-Circuit Technology /p-type

impurities

/

. .. . . . . .. . .. . .......... ... ... .... ... . .. ... .. ... :. . . p-type substrate .:'.*: :..':: - . .. .. .. . '.. : . . . . .......:.. :. .:...... ..:.;..: . . . . . . . . . ............. . . . . . . .:. ... ... ... . S

.

.

.

. . ' . . . . . . a * .

a

.

.

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.

.

e

a

.

.

.

.

.

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.

.

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.

.

a

Figure 2.12 Structure following isolation diffusion.

Figure 2.13 Structure following base hffusion.

is termed the isolation diffusion. Because of the depth to which the diffusion must penetrate, this diffusion requires several hours in a diffusion furnace at temperatures of about 1200•‹C.The isolated diffused layer has a sheet resistance from 20 fl/0to 40 film. The next steps are the base mask, base predeposition, and base diffusion, as shown in Fig. 2.13. The latter is usually a boron diffusion, and the resulting layer has a sheet resistance of from 100 i2/O to 300 f i / 0 , and a depth of 1 pm to 3 pm at the end of the process. This diffusion forms not only the bases of the transistors, but also many of the resistors in the circuit, so that control of the sheet resistance is important. Following the base diffusion, the emitters of the transistors are formed by a mask step, n-type predeposition, and diffusion, as shown in Fig. 2.14. The sheet resistance is between 2 C E I and 10 fi/CI, and the depth is 0.5 Fm to 2.5 p m after the diffusion. This diffusion step is also used to form a low-resistance region, which serves as the contact to the collector region. This is necessary because ohmic contact is difficult to accomplish between alurninum metallization and the high-resistivity epitaxial material directly. The next masking step, the contact mask, is used to open holes in the oxide over the emitter, the base, and the collector of the transistors so that electrical contact can be made to them. Contact windows are also opened for the passive components on the chip. The entire wafer n-type impurities

h

/

p-type base

f

si02

..................... .. ... ...:................ .... ... ..:.......... .......................... p-type substrate . .. ... ... .. ....... .. .. . .. .. . .. .. '... .- .. ...:.. ... ... . .... .:. .. .... .. .. ... .I. .-.... .... .- .. . . . . . . . . . .. .. . . . . . . . . . . . . . . . . . a . . . . . .

.

.

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a .

.

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a

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.

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.

.

Figure 2.14 Structure following emitter diffusion.

.

.

S

.

2.3 High-Voltage Bipolar Integrated-CircuitFabrication Collector contact

Base

Emitter

91

SiO,

\

_

. .. . .. . . .. . . :. . . ...... ... .. ... .. ...... .... .. . .. .. . . . . . . . ..:.:... . . . . . . . . . . . . . . . . . . . . ...... .. ... ..... .. .. .. .. .. .. .. ... . . . . .. ......:. ... .:.. ..: .:.. . . .:.: ... : . . .. .. ... . p-type substrate : '.': . . . ..... .. .. .:.. . . . . .. ........ ..................... ......................................... . .. ... ... .... ... . . . .. . .. ... . .. . .. . . . .... ... .... .. ... . . . . . Figure 2.15 Final structure following contact mask and metallization. .

.

.

.

.

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a

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S

.

,

. I

is then coated with a thin (about l km) layer of aluminum that will interconnect the circuit elements. The actual interconnect pattern is defined by the last mask step, in which the aluminum is etched away in the areas where the photoresist is removed in the develop step. The final structure is shown in Fig. 2.15. A microscope photograph of an actual structure of the same type is shown in Fig. 2.16. The terraced effect on the surface of the device results from the fact that additional oxide is grown during each diffusion cycle, so that the oxide is thickest over the epitaxial region, where no oxide has been removed, is less thick over the base and isolation regions, which are both opened at the base mask step, and is thinnest over the emitter diffusion. A typical diffusion profile for a high-voltage, deep-diffused analog integrated circuit is shown in Fig. 2.17. This sequence allows simultaneous fabrication of a large number (often thousands) of complex circuits on a single wafer. The wafer is then placed in an automatic tester, which checks the electrical characteristics of each circuit on the wafer and puts an ink dot on circuits that fail to meet specifications. The wafer is then broken up, by sawing or scribing and breaking, into individual circuits. The resulting silicon chips are called dice,and the singular is die.Each good die is then mounted in a package, ready for final testing.

Base contact window Base tnetallizatton

Emitter contact window

Edge of base diffusion Edge of emitter diffusion

Edge of collector

7,'

/

Emitter metallization

dtffuslon/

!

Collector metallizatro~i Collector contact w~ndow

Figure 2.16

Scanning electron microscope photograph of npn transistor structure.

92

Chapter 2


Impurity concentration, (cross section A-A')

102'

-

-

1013-

X

concentration (NO)

(pm)

Figure 2.17 Typical impurity concentration for a monolithic npn transistor in a high-voltage, deep-diffused process.

2.4 Advanced Bipolar Integrated-Circuit Fabrication A large fraction of bipolar analog integrated circuits currently manufactured uses the basic technology described in the previous section, or variations thereof. The fabrication sequence is relatively simple and low in cost. However, many of the circuit applications of commercial importance have demanded steadily increasing frequency response capability, which translates directly to a need for transistors of higher frequency-response capability in the technology. The higher speed requirement dictates a device structure with thinner base width to reduce base transit time and smaller dimensions overall to reduce parasitic capacitances. The smaller device dimensions require that the width of the junction depletion layers within the structure be reduced in proportion, which in turn requires the use of lower circuit operating voltages and higher impurity concentrations in the device structure. To meet this need, a class of bipolar fabrication technologies has evolved that, compared to the high-voltage process sequence described in the last section, use much thinner and more heavily doped epitaxial layers, selectively oxidized regions for isolation instead of diffused junctions, and a polysilicon layer as the source of dopant for the emitter. Because of the growing importance of this class of bipolar process, the sequence for such a process is described in this section.

2.4 Advanced Bipolar Integrated-Circuit Fabrication n-type epitaxial layer

/

93

SiO,

. .. .. ......._...... . . . . . . . . .. ....:....... .. .... .. .. ... .. ... ..-...... ... .. .. ... .. .. .. ... ........ ......... ...:...: . . . . . . .. . . . . . . . . . . . . . . .. ... .. .. .. .. ... . . . . . .. .. . . . .......::..... p-iype substrate : ::'. . : . .... ... . . . . .. .... . . . .: . :... ..... ....... ......-.. ... ............. .. .. .. . .:..'.: . . . . . . . . . . . . . . . . . .. ... .. .. .. .. . . ... ... ....... .. ... .... ........ ... ....... ..: . -: ... .: .. . . ......:..: . . .'. :. : . . . . : :..:. -,; : . .. . . . _ . . . . . . . . .::. .. . . . . . . Figure 2.18 Device cross section following initial buried-layer mask, implant, and epitaxial-layer growth.

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The starting point for the process is similar to that for the conventional process, with a mask and implant step resulting in the formation of a heavily-doped n+ buried layer in a p-type substrate. Following this step, a thin n-type epitaxial layer is grown, about 1 k m in thickness and about 0.5 Q-cm in resistivity. The result after these steps is shown in cross section in Fig. 2.18. Next, a selective oxidation step is carried out to form the regions that will isolate the transistor from its neighbors and also isolate the collector-contact region from the rest of the transistor. The oxidation step is as described in Section 2.2.7, except that prior to the actual growth of the thick Si02 layer, an etching step is performed to remove silicon material from the regions where oxide will be grown. If this is not done, the thick oxide growth results in elevated humps in the regions where the oxide is grown. The steps around these humps cause difficulty in coverage by subsequent layers of metal and polysilicon that will be deposited. The removal of some silicon material before oxide growth results in a nearly planar surface after the oxide is grown and removes the step coverage problem in subsequent processing. The resulting structure following this step is shown in Fig. 2.19. Note that the Si02 regions extend all the way down to the p-type substrate, electrically isolating the n-type epi regions from one another. These regions are often referred to as moats. Because growth of oxide layers thicker than a micron or so requires impractically long times, this method of isolation is practical only for very thin transistor structures. Next, two mask and implant steps are performed. A heavy n+ implant is made in the collector-contact region and diffused down to the buried layer, resulting in a low-resistance path to the collector. A second mask is performed to define the base region, and a thin-base p-type implant is performed. The resulting structure is shown in Fig. 2.20. A major challenge in fabricating this type of device is the formation of very thin base and emitter structures, and then providing low-resistance ohmic contact to these regions. This is most often achieved using polysilicon as a doping source. An n+ doped layer of polysilicon is deposited and masked to leave polysilicon only in the region directly over the emitter. During subsequent high-temperature processing steps, the dopant (usually

Figure 2.19

moats.

Device cross section following selective etch and oxidation to form thick-oxide

94 Chapter 2

Bipolar, MOS, and BiCMOS Integrated-Circuit Technology p- base layer

/ . . .:.:.... ... . .. . . . . . . .... ........ .. ..:.. ... .. ... .. ... .. ... .... .. ... .. ... ...... ... .... ......: . . . . . . .. . . . . . . . . . .. .. .. .. . . . . . . .. .. .....:... .. . . . . .. . . :. ::.-. .............S.. :.. p-type substrate .: .: .: . . . ....:... .... ..;..:.. .. .. . . . . . . . . . . . . . . . . . . . . . . . . . . . : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ........... ... . .. .. .. .. .. .. .. .. .. ..... ... .. :.. .. .. . . . . . . . . . . . . . . ... .. ... .. ... .. ... . . . . . .

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Figure 2.20 Device cross section following mask, implant, and diffusion of collector n' region, and mask and implant of base p-type region.

1 1 p+ base layer

p+ implant n+ polysilicon emitter

/ n- epi layer

\

. .. . . . . . . . ..:....: . . . .. .. . ... .: .. ... .. ... .... .. ........... .. ... ..... ........................ .. .. .. .. .......... .. .. .... ............ .. ... ...... . .......... .. . .. .. ......:: . ' . . . . . . . . . . . . . . a ........... . .. ...... .... .. ....... .... ....... .. ....... .:......- .:....:....:p. . .type . . . substrate...: .......................... . . . . .. ,.. . .. .. .. .. ... .. .. .. . . . . . . ............... . . . . . . . . ... ... .. ... .. ... ... .. ... .. ... ... .. ... .. ........ .... .. .. ... .. .. .. .. .. .. . . . . . .. ... ...-.:.. . S

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l

Figure 2.21 Device cross section following poly deposition and mask, base p-type implant, and thermal diffusion cycle.

arsenic) diffuses out of the polysilicon and into the crystalline silicon, forming a very thin, heavily doped emitter region. Following the poly deposition, a heavy p-type implant is performed, which results in a more heavily doped p-type layer at all points in the base region except directly under the polysilicon, where the polysilicon itself acts as a mask to prevent the boron atoms from reaching this part of the base region. The structure that results following this step is shown in Fig. 2.2 1. This method of forming low-resistance regions to contact the base is called a selfaligned structure because the alignment of the base region with the emitter happens automatically and does not depend on mask alignment. Similar processing is used in MOS technology, described later in this chapter. The final device structure after metallization is shown in Fig. 2.22. Since the moats are made of S O a , the metallization contact windows can overlap into them, a fact that

/ Polysilicon emitter

Base contact

/ metal

Collector contact

/ metal

F

t

P

.... ..... .. ..... .......... .. .. ...... ..... .. ........ ..... ..... .. ..... .. ......... .... .. ... .....:..:. . . . . ... .... . . .. . . . . ..:.. . . . . . ' . . . . . . .. .. ............... .. . . . . . . . . : . . . . . . . . ... . . :.:,: . . . .:. . .. .::.:' . . . . ....... .. . . . . . ... .. . .. .. p-type substrate ............... . . . . . . . . . . . . .. ... .. .. .. ... . . . . . . . . . . : . . . . . . . . . .. .. ................ ... ....:.............. .. . .... . . . .. . . .. . . . , .... .' . . . . . . . . . . . . v

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Figure 2.22 Final device cross section. Note that collector and base contact windows can overlap moat regions. Emitter contact for the structure shown here would be made on an extension of the polysilicon emitter out of the device active area, allowing the minimum possible emitter size.

i

i

2.5 Active Devices in Bipolar Analog lntegrated Circuits

Thermal (grown) oxide

Oxide opening defining base region

Collector contact (first metal)

Step coverage into contact through De~osited o .~ e n i n ain ( C V oxide ~ deposited oxide

95

Second-metal interconnect to base

Base contact (first metal)

~oi;silicon em~tter

Second-metal interconnect to collector

Second-metal interconnect to emitter

Figure 2.23 Scanning-electron-microscope photographs of a bipolar transistor in an advanced, polysilicon-emitter, oxide-isolated process. ( a ) After polysilicon emitter definition and first-metal contact to the base and collector. The polysilicon emitter is 1 p m wide. (b) After oxide deposition, contact etch, and second-metal interconnect. [QUBic process photograph courtesy of Signetics.]

dramatically reduces the minimum achievable dimensions of the base and collector regions. All exposed silicon and polysilicon is covered with a highly conductive silicide (a compound of silicon and a refractory metal such as tungsten) to reduce series and contact resistance. For minimum-dimension transistors, the contact to the emitter is made by extending the polysilicon to a region outside the device active area and forming a metal contact to the polysilicon there. A photograph of such a device is shown in Fig. 2.23, and a typical impurity profile is shown in Fig. 2.24. The use of the remote emitter contact with polysilicon connection does add some series emitter resistance, so for larger device geometries or cases in which emitter resistance is critical, a larger emitter is used and the contact ~.~ is placed directly on top of the polysilicon emitter itself. Production IC p r o c e s s e ~based on technologies similar to the one just described yield bipolar transistors having fT values well in excess of 10 GHz, compared to a typical value of 500 MHz for deep-diffused, high-voltage processes.

2.5 Active Devices in Bipolar Analog lntegrated Circuits The high-voltage IC fabrication process described previously is an outgrowth of the one used to make npn double-diffused discrete bipolar transistors, and as a result the process inherently produces double-diffused n p n transistors of relatively high performance. The advanced technology process improves further on all aspects of device performance except for breakdown voltage. In addition to npn transistors, pnp transistors are also required in many analog circuits, and an important development in the evolution of analog IC technologies was the invention of device structures that allowed the standard technology to produce pnp transistors as well. In this section, we will explore the structure and properties of nyn, lateral pny, and substrate pnp transistors. We will draw examples primarily from the high-voltage technology. The available structures in the more advanced technology

96

Chapter 2 m Bipolar, MOS, a n d BiCMOS Integrated-Circuit Technology

Impurity concentration, cm-3 (cross section A-A')

t I

( Emitter (As)

Depth,

Figure 2.24 npical impurity profile in a shallow oxide-isolated bipolar transistor.

are similar, except that their frequency response is correspondingly higher. We will include representative device parameters from these newer technologies as well.

2.5.1 Integrated-Circuit npn Transistors The structure of a high-voltage, integrated-circuit npn transistor was described in the last section and is shown in plan view and cross section in Fig. 2.25. In the forward-active region of operation, the only electrically active portion of the structure that provides current gain is that portion of the base immediately under the emitter diffusion. The rest of the structure provides a top contact to the three transistor terminals and electrical isolation of the device from the rest of the devices on the same die. From an electrical standpoint, the principal effect of these regions is to contribute parasitic resistances and capacitances that must be included in the small-signal model for the complete device to provide an accurate representation of high-frequency behavior. An important distinction between integrated-circuit design and discrete-component circuit design is that the IC designer has the capability to utilize a device geometry that is specifically optimized for the particular set of conditions found in the circuit. Thus the circuit-design problem involves a certain amount of device design as well. For example, the need often exists for a transistor with a high current-carrying capability to be used in the output stage of an amplifier. Such a device can be made by using a larger device geometry than the standard one, and the transistor then effectively consists of many standard devices connected in parallel. The larger geometry, however, will display larger

2.5 Active Devices in Bipolar Analog Integrated Circuits

-P -

IC

Distance, Pm

-

97

+ Buried layer + Isolation 1 Base

=+Emitter

vA + Contact opening + Metal

IE

120

90 80

Collector

Base

Emitter

. .. . .. . . . . . . . . . . . .:.; . . .. . . . . , ..... .. . .. .. .. .. .. .. .. .. ..- .. .. . .. .. .' . p-type.substrate :... : . . . ............... . . . . . . ... .. :.. ' . :.. - . - . . . . . . . . .. . . . .. .. . . . .. . .. . . . .. . Figure 2.25 Integrated-circuit npn transistor. The mask layers are coded as shown. .

a

_

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base-emitter, collector-base, and collector-substrate capacitance than the standard device, and this must be taken into account in analyzing the frequency response of the circuit. The circuit designer then must be able to determine the effect of changes in device geometry on device characteristics and to estimate the important device parameters when the device structure and doping levels are known. To illustrate this procedure, we will calculate the model parameters of the npn device shown in Fig. 2.25. This structure is typical of the devices used in circuits with a 5-a-cm, 17-pm epitaxial layer. The emitter diffusion is 20 p m X 25 pm, the base diffusion is 45 p m X 60 km, and the base-isolation spacing is 25 pm. The overall device dimensions are 140 p m X 95 pm. Device geometries intended for lower epi resistivity and thickness can be much smaller; the base-isolation spacing is dictated by the side diffusion of the isolation region plus the depletion layers associated with the base-collector and collector-isolation junctions. Saturation Current Is. In Chapter l, the saturation current of a graded-base transistor was

shown to be

98

Chapter 2

Bipolar, MOS, and BiCMOS Integrated-CircuitTechnology

where A is the emitter-base junction area, QBis the total number of impurity atoms per unit area in the base, nj is the intrinsic carrier concentration, and D, is the effective diffusion constant for electrons in the base region of the transistor. From Fig. 2.17, the quantity QB can be identified as the area under the concentration curve in the base region. This could be determined graphically but is most easily determined experimentally from measurements of the base-emitter voltage at a constant collector current. Substitution of (2.16) in (1.35) gives

and QB can be determined from this equation. m

EXAMPLE A base-emitter voltage of 550 mV is measured at a collector current of 10 pA on a test transistor with a 100 p m X 100 pm emitter area. Estimate QB if T = 300•‹K.From Chapter 1, we have ni = 1.5 X 10'' cmp3. Substitution in (2.17) gives

At the doping levels encountered in the base, an approximate value of D,, the electron diffusivity, is

Thus for this example,

Note that QB depends on the diffusion profiles and will be different for different types of processes. Generally speaking, fabrication processes intended for lower voltage operation use thinner base regions and display lower values of QB. Within one nominally fixed process, QBcan vary by a factor of two or three to one because of diffusion process variations. The principal significance of the numerical value for QB is that it allows the calculation of the saturation current Is for any device structure once the emitter-base junction area is known. Series Base Resistance lb. Because the base contact is physically removed from the active

base region, a significant series ohmic resistance is observed between the contact and the active base. This resistance can have a significant effect on the high-frequency gain and on the noise performance of the device. As illustrated in Fig. 2.26a, this resistance consists of two parts. The first is the resistance 1-61 of the path between the base contact and the edge of the emitter diffusion. The second part rb2 is that resistance between the edge of

(4

Figure 2.26 (a) Base resistance components for the npn transistor.


99

Figure 2.26 (b) Calculation of rbr. The rbl component of base resistance can be estimated by calculating the resistance of the rectangular block above.

the emitter and the site within the base region at which the current is actually flowing. The former component can be estimated by neglecting fringing and by assuming that this component of the resistance is that of a rectangle of material as shown in Fig. 2.26b. For a base sheet resistance of 100 a10 and typical dimensions as shown in Fig. 2.26b, this would give a resistance of

The calculation of rb2 is complicated by several factors. First, the current flow in this region is not well modeled by a single resistor because the base resistance is distributed throughout the base region and two-dimensional effects are important. Second, at even moderate current levels, the effect of current crowding9 in the base causes most of the carrier injection from the emitter into the base to occur near the periphery of the emitter diffusion. At higher current levels, essentially all of the injection takes place at the periphery and the effective value of r b approaches r b l . In this situation, the portion of the base directly beneath the emitter is not involved in transistor action. A typically observed variation of r b with collector current for the npn geometry of Fig. 2.25 is shown in Fig. 2.27. In transistors designed for low-noise andor high-frequency applications where low rb is important, an effort is often made to maximize the periphery of the emitter that is adjacent to the base contact. At the same time, the emitter-base junction and collector-base junction areas must be kept small to minimize capacitance. In the case of high-frequency transistors, this usually dictates the use of an emitter geometry that consists of many narrow A 500 400 300 200 l00 1

l

0.001 0.01

l

1

l

0.1

1

10

Collector current, rnA

+

Figure 2.27 Typical variation of effective small-signal base resistance with collector

current for integrated-circuit npn transistor.

100 Chapter 2


(4 Figure 2.28 (a) Components of collector resistance r,.

stripes with base contacts between them. The ease with which the designer can use such device geometries is an example of the flexibility allowed by monolithic IC construction. Series Collector Resistance r,. The series collector resistance is important both in highfrequency circuits and in low-frequency applications where low collector-emitter saturation voltage is required. Because of the complex three-dimensional shape of the collector region itself, only an approximate value for the collector resistance can be obtained by hand analysis. From Fig. 2.28, we see that the resistance consists of three parts: that from the collector-base junction under the emitter down to the buried layer, r,~;that of the buried layer from the region under the emitter over to the region under the collector contact, rc2; and finally, that portion from the buried layer up to the collector contact, rcg. The smallsignal series collector resistance in the forward-active region can be estimated by adding the resistance of these three paths.

EXAMPLE Estimate the collector resistance of the transistor of Fig. 2.25, assuming the doping profile of Fig. 2.17. We first calculate the rcl component. The thickness of the lightly doped epi layer between the collector-base junction and the buried layer is 6 pm. Assuming that the collector-base junction is at zero bias, the results of Chapter 1 can be used to show that the depletion layer is about 1 p m thick. Thus the undepleted epi material under the base is 5 p m thick. The effective cross-sectional area of the resistance r,l is larger at the buried layer than at the collector-base junction. The emitter dimensions are 20 p m X 25 pm, while the buried layer dimensions are 41 k m X 85 p m on the mask. Since the buried layer sidediffuses a distance roughly equal to the distance that it out-diffuses, about 8 p m must be added on each edge, giving an effective size of 57 k m X 101 km. An exact calculation of the ohmic resistance of this three-dimensional region would require a solution of Laplace's equation in the region, with a rather complex set of boundary conditions. Consequently, we will carry out an approximate analysis by modeling the region as a rectangular paral-

l

---

Figure 2.28 (b) Model for calculation of collector (b)

resistance.


101

lelepiped, as shown in Fig. 2.28b. Under the assumptions that the top and bottom surfaces of the region are equipotential surfaces, and that the current flow in the region takes place only in the vertical direction, the resistance of the structure can be shown to be

where T p W,L a b

thickness of the region resistivity of the material width, length of the top rectangle = ratio of the width of the bottom rectangle to the width of the top rectangle = ratio of the length of the bottom rectangle to the length of the top rectangle =

= =

Direct application of this expression to the case at hand would give an unrealistically low value of resistance, because the assumption of one-dimensional flow is seriously violated when the dimensions of the lower rectangle are much larger than those of the top rectangle. Equation 2.18 gives realistic results when the sides of the region form an angle of about 60" or less with the vertical. When the angle of the sides is increased beyond this point, the resistance does not decrease very much because of the long path for current flow between the top electrode and the remote regions of the bottom electrode. Thus the limits of the bottom electrode should be determined either by the edges of the buried layer or by the edges of the emitter plus a distance equal to about twice the vertical thickness T of the region, whichever is smaller. For the case of r,l ,

We assume that the effective emitter dimensions are those defined by the mask plus approximately 2 k m of side diffusion on each edge. Thus

For this case, the buried-layer edges are further away from the emitter edge than twice the thickness T on all four sides when side diffusion is taken into account. Thus the effective buried-layer dimensions that we use in (2.18) are

and

Thus from (2.1g),

102

Chapter 2


We will now calculate rc2, assuming a buried-layer sheet resistance of 20 f i10.The distance from the center of the emitter to the center of the collector-contact diffusion is 62 pm, and the width of the buried layer is 41 p,m. The rc2 component is thus, approximately,

Here the buried-layer side diffusion was not taken into account because the ohmic resistance of the buried layer is determined entirely by the number of impurity atoms actually diffused [see (2.15)] into the silicon, which is determined by the mask dimensions and the sheet resistance of the buried layer. For the calculation of rc3, the dimensions of the collector-contact n+ diffusion are 18 p m X 49 pm, including side diffusion. The distance from the buried layer to the bottom of the n+ diffusion is seen in Fig. 2.17 to be 6.5 pm, and thus T = 6.5pm in this case. On the three sides of the collector'n diffusion that do not face the base region, the outdiffused buried layer extends only 4 p m outside the n+ diffusion, and thus the effective dimension of the buried layer is determined by the actual buried-layer edge on these sides. On the side facing the base region, the effective edge of the buried layer is a distance 2 T , or 13 pm, away from the edge of the n+ diffusion. The effective buried-layer dimensions for the calculation of rc3 are thus 35 k m X 57 pm. Using (2.18),

The total collector resistance is thus

The value actually observed in such devices is somewhat lower than this for three reasons. First, we have approximated the flow as one-dimensional, and it is actually threedimensional. Second, for larger collector-base voltages, the collector-base depletion layer extends further into the epi, decreasing r,,. Finally, the value of rc that is important is often that for a saturated device. In saturation, holes are injected into the epi region under the emitter by the forward-biased, collector-base function, and they modulate the conductivity of the region even at moderate current levels.1•‹Thus the collector resistance one measures when the device is in saturation is closer to (rc2 + rc3), or about 250 to 300 S1. Thus r, is smaller in saturation than in the forward-active region. Collector-Base Capacitance. The collector-base capacitance is simply the capacitance

of the collector-base junction including both the flat bottom portion of the junction and the sidewalls. This junction is formed by the diffusion of boron into an n-type epitaxial material that we will assume has a resistivity of 5 0-cm, corresponding to an impurity concentration of 1015 atoms/cm3. The uniformly doped epi layer is much more lightly doped than the p-diffused region, and as a result, this junction is well approximated by a step junction in which the depletion layer lies almost entirely in the epitaxial material. Under this assumption, the results of Chapter 1 regarding step junctions can be applied, and for convenience this relationship has been plotted in nomograph form in Fig. 2.29. This nomograph is a graphical representation of the relation


1

2

4

6 8 1 0 Voltage (V)

20

40

103

6080100

Figure 2.29 Capacitance and depletion-layer width of an abrupt p n junction as a function of applied voltage and doping concentration on the lightly doped side of the junction"

where NB is the doping density in the epi material and V Ris the reverse bias on the junction. The nomograph of Fig. 2.29 can also be used to determine the junction depletion-region width as a function of applied voltage, since this width is inversely proportional to the capacitance. The width in microns is given on the axis on the right side of the figure. Note that the horizontal axis in Fig. 2.29 is the total junction potential, which is the applied potential plus the built-in voltage .~!,t In order to use the curve, then, the builtin potential must be calculated. While this would be an involved calculation for a diffused junction, the built-in potential is actually only weakly dependent on the details of the diffusion profile and can be assumed to be about 0.55 V for the collector-base junction, 0.52 V for the collector-substrate junction, and about 0.7 V for the emitter-base junction. I

EXAMPLE Calculate the collector-base capacitance of the device of Fig. 2.25. The zero-bias capacitance per unit area of the collector-base junction can be found from Fig. 2.29 to be approximately 1OP4p ~ / ~ The m ~total . area of the collector-base junction is the sum of the area of the bottom of the base diffusion plus the base sidewall area. From Fig. 2.25, the bottom area is

The edges of the base region can be seen from Fig. 2.17 to have the shape similar to onequarter of a cylinder. We will assume that the region is cylindrical in shape, which yields a sidewall area of

104

Chapter 2


where P = base region periphery d = base diffusion depth Thus we have Asidewall= 3 p m X (60 p m

+ 60 p m + 45 p m + 45 pm) X

'TT -

2

=

989 pm2

and the total capacitance is

Collector-Substrate Capacitance. The collector-substrate capacitance consists of three portions: that of the junction between the buried layer and the substrate, that of the sidewall of the isolation diffusion, and that between the epitaxial material and the substrate. Since the substrate has an impurity concentration of about 1016 cmp3, it is more heavily doped than the epi material, and we can analyze both the sidewall and epi-substrate capacitance under the assumption that the junction is a one-sided step junction with the epi material as the lightly doped side. Under this assumption, the capacitance per unit area in these regions is the same as in the collector-base junction.

EXAMPLE Calculate the collector-substrate capacitance of the standard device of Fig. 2.25. The area of the collector-substrate sidewall is

We will assume that the actual buried layer covers the area defined by the mask, indicated on Fig. 2.25 as an area of 41 p m X 85 pm, plus 8 p m of side-diffusion on each edge. This gives a total area of 57 p m X 101 pm. The area of the junction between the epi material and the substrate is the total area of the isolated region, minus that of the buried layer.

Aepi-substrate = (140 k m =

X

95 pm)

-

(57 p m

X

101 pm)

7543 p,m2

The capacitances of the sidewall and epi-substrate junctions are, using a capacitance per unit area of 10-4p~/pm2 CCso(sidewall)

=

CCso(epi-substrate)=

(12,550 pm2)(10-4p~/pm2)= 1.26 pF (7543 pm2)(10-4 p ~ / p m 2 = ) 0.754 pF

For the junction between the buried layer and the substrate, the lightly doped side of the junction is the substrate. Assuming a substrate doping level of 1016 atoms/cm3, and a built-in voltage of 0.52 V, we can calculate the zero-bias capacitance per unit area as 3.3 X 1 0 - ~pF/pm2. The area of the buried layer is

and the zero-bias capacitance from the buried layer to the substrate is thus


105

The total zero-bias, collector-substrate capacitance is thus

Emitter-Base Capacitance. The emitter-base junction of the transistor has a doping profile that is not well approximated by a step junction because the impurity concentration on both sides of the junction varies with distance in a rather complicated way. Furthermore, the sidewall capacitance per unit area is not constant but varies with distance from the surface because the base impurity concentration varies with distance. A precise evaluation of this capacitance can be carried out numerically, but a firstorder estimate of the capacitance can be obtained by calculating the capacitance of an abrupt junction with an impurity concentration on the lightly doped side that is equal to the concentration in the base at the edge of the junction. The sidewall contribution is neglected. U

EXAMPLE Calculate the zero-bias, emitter-base junction capacitance of the standard device of Fig. 2.25. We first estimate the impurity concentration at the emitter edge of the base region. From Fig. 2.17, it can be seen that this concentration is approximately 1017 atoms/cm3. From the nomograph of Fig. 2.29, this abrupt junction would have a zero-bias capacitance per unit area of 10-3 p ~ / p m 2Since . the area of the bottom portion of the emitter-base junction is 25 p m X 20 pm, the capacitance of the bottom portion is

Again assuming a cylindrical cross section, the sidewall area is given by

Assuming that the capacitance per unit area of the sidewall is approximately the same as the bottom,

The total emitter-base capacitance is

Current Gain. As described in Chapter 1, the current gain of the transistor depends on minority-carrier lifetime in the base, which affects the base transport factor, and on the diffusion length in the emitter, which affects the emitter efficiency. In analog IC processing, the base minority-carrier lifetime is sufficiently long that the base transport factor is not a limiting factor in the forward current gain in npn transistors. Because the emitter region is heavily doped with phosphorus, the rninority-carrier lifetime is degraded in this region, and current gain is limited primarily by emitter efficiency.12 Because the doping level, and hence lifetime, vary with distance in the emitter, the calculation of emitter efficiency for the npn transistor is difficult, and measured parameters must be used. The room-temperature current gain typically lies between 200 and l000 for these devices. The current gain falls with decreasing temperature, usually to a value of from 0.5 to 0.75 times the room temperature value at -55•‹C.

106

Chapter 2


Parameter

Typical Value, Typical Value, 5-R-cm,l7-t~mepi l-a-cm,lO-pmepi 44-V Device 20-V Device

PF BR

vA

77 1s

Ico BVCEO BVcso BVEBO TF TR

PO rb

r, (saturation) re.,

Base-emitter junction

junction Collectorsubstrate junction Figure 2.30 Typical parameters for high-voltage integrated npn transistors with 500 pm2 emitter area. The thick epi device is typical of those used in circuits operating at up to 44 V power-supply voltage, while the thinner device can operate up to about 20 V. While the geometry of the thin epi device is smaller, the collector-base capacitance is larger because of the heavier epi doping. The emitter-base capacitance is higher because the base is shallower, and the doping level in the base at the emitter-base junction is higher.

Summary of High-Voltage npn Device Parameters. A typical set of device parameters for the device of Fig. 2.25 is shown in Fig. 2.30. This transistor geometry is typical of that used for circuits that must operate at power supply voltages up to 40 V. For lower operating voltages, thinner epitaxial layers can be used, and smaller device geometries can be used as a result. Also shown in Fig. 2.30 are typical parameters for a device made with l-&cm epi material, which is 10 p m thick. Such a device is physically smaller and has a collector-emitter breakdown voltage of about 25 V. Advanced-Technology Oxide-Isolated npn Bipolar Transistors. The structure of an advanced oxide-isolated, poly-emitter npn bipolar transistor is shown in plan view and cross section in Fig. 2.31. Typical parameters for such a device are listed in Fig. 2.32. Note the enormous reduction in device size, transit time, and parasitic capacitance compared to the high-voltage, deep-diffused process. These very small devices achieve optimum performance characteristics at relatively low bias currents. The value of P for such a device typically peaks at a collector current of about 50 pA. For these advanced-technology tran-


107

!

B

I

I 1

I

I 5

I 4

3

I

I

I

I

I

5

6

7

8

9

I I I C 1 0 . 1 1 1 2 Distance, pm

-P - -4 Buried layer

- + Thick oxide edge n+ Collector

-

=$ p+Base

+ Polysilicon + Contact regions + Metal

fi [XI

.. ...... ..... ... .......... .............. ... .... . .. . . . . ... ... ... ... .. .. . . . . . . . ...::....::. . . . . . . . . . . . . ... .. .. ... .. . . ..:.....::. . .. .. .:............... ............. ...... . . . . . . . . . . . . . . . . . S . . : . . . . . . . . . . . . p-type . . . . substrate ... .... . .. . .. .. .. . . ... . .. . . . . . . . . .. .. .. .. .. .. .. ... .. :.. .. . . . . .:....... .. . .,.. -. . .. :. ... .. . . . .. ... .. . .: .. .. . .. . .. ... . . . . . . .... .. .... . _... . . . .. .. .. .. .. .

m

.

.

.

a

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.

.

.

.

.

.

.

.

.

.

,

.

.

.

.

.

.

.

.

.

S

.

Figure 2.31 Plan view and cross section of a typical advanced-technology bipolar transistor. Note the much smaller dimensions compared with the high-voltage device.

sistors, the use of ion implantation allows precise control of very shallow emitter (0.1 km) and base (0.2 km) regions. The resulting base width is of the order of 0.1 pm, and (1.99) predicts a base transit time about 25 times smaller than the deep-diffused device of Fig. 2.17. This is observed in practice, and the ion-implanted transistor has a peak fT of about 13 GHz.

2.5.2 Integrated-Circuitpnp Transistors As mentioned previously, the integrated-circuit bipolar fabrication process is an outgrowth of that used to build double-diffused epitaxial n p n transistors, and the technology inherently produces n p n transistors of high performance. However, p n p transistors of comparable performance are not easily produced in the same process, and the earliest analog integrated circuits used no p n p transistors. The lack of a complementary device for use in biasing, level shifting, and as load devices in amplifier stages proved to be a severe

108

Chapter 2


Parameter

Vertical npn Transistor with 2 pm2 Emitter Area

Lateral pnp Transistor with 2 p,m2 Emitter Area

Figure 2.32 Typical device parameters for bipolar transistors in a low-voltage, oxide-isolated, ionimplanted process.

limitation on the performance attainable in analog circuits, leading to the development of several p n p transistor structures that are compatible with the standard IC fabrication process. Because these devices utilize the lightly doped n-type epitaxial material as the base of the transistor, they are generally inferior to the npn devices in frequency response and high-current behavior, but are useful nonetheless. In this section, we will describe the lateral p n p and substrate p n p structures. Lateral pnp Transistors. A typical lateral p n p transistor structure fabricated in a highvoltage process is illustrated in Fig. 2.33a.13 The emitter and collector are formed with the same diffusion that forms the base of the npn transistors. The collector is a p-type ring around the emitter, and the base contact is made in the n-type epi material outside the collector ring. The flow of minority carriers across the base is illustrated in Fig. 2.33b. Holes are injected from the emitter, flow parallel to the surface across the n-type base region, and ideally are collected by the p-type collector before reaching the base contact. Thus the transistor action is lateral rather than vertical as in the case for npn transistors. The principal drawback of the structure is the fact that the base region is more lightly doped than the collector. As a result, the collector-base depletion layer extends almost entirely into the base. The base region must then be made wide enough so that the depletion layer does not reach the emitter when the maximum collector-emitter voltage is applied. In a typical analog IC process, the width of this depletion layer is 6 p m to 8 p m when the collector-emitter voltage is in the 40-V range. Thus the minimum base width for such a device is about 8 km, and the minimum base transit time can be estimated from (1.99)


109

Distance,

Pm 120 110 l00 -

90 80 70 60 50 40 30 20 10 0-

I

Base

I

Collector

Emitter

(4 Figure 2.33 (a) Lateral pnp structure fabricated in a high-voltage process.

Use of WB = 8 p m and Dp

=

10 cm2/s (for holes) in (2.20) gives

This corresponds to a peak f~of 5 MHz, which is a factor of 100 lower than a typical n p n transistor in the same process. The current gain of lateral pnp transistors tends to be low for several reasons. First, minority carriers (holes) in the base are injected downward from the emitter as well as laterally, and some of them are collected by the substrate, which acts as the collector of a parasitic vertical pnp transistor. The buried layer sets up a retarding field that tends to inhibit this process, but it still produces a measurable degradation of PF. Second, the emitter of the pnp is not as heavily doped as is the case for the n p n devices, and thus the emitter injection efficiency given by (1.5 1b) is not optimized for the pnp devices. Finally,

110

Chapter 2


p

P

2'

P n

Injected holes

Figure 2.33 (b) Minority-carrier flow in the lateral pnp transistor.

the wide base of the lateral pnp results in both a low emitter injection efficiency and also a low base transport factor as given by (1.51a). Another drawback resulting from the use of a lightly doped base region is that the current gain of the device falls very rapidly with increasing collector current due to highlevel injection. The minority-carrier distribution in the base of a lateral pnp transistor in the forward-active region is shown in Fig. 2.34. The collector current per unit of crosssectional area can be obtained from (1.32) as

Inverting this relationship, we can calculate the minority-carrier density at the emitter edge of the base as

As long as this concentration is much less than the majority-carrier density in the base, low-level injection conditions exist and the base minority-carrier lifetime remains constant. However, when the minority-carrier density becomes comparable with the majoritycarrier density, the majority-carrier density must increase to maintain charge neutrality in the base. This causes a decrease in PF for two reasons. First, there is a decrease in the effective lifetime of minority carriers in the base since there is an increased number of majority carriers with which recombination can occur. Thus the base transport factor given by (1 S l a ) decreases. Second, the increase in the majority-carrier density represents an effective increase in base doping density. This causes a decrease in emitter injection efficiency given by (1.51b). Both these mechanisms are also present in npn transistors, but occur at much higher current levels due to the higher doping density in the base of the npn transistor.

t Minority-carrier concentration P Emitter

depletion layer

A

n Base

P

Collector

ase layer

Figure 2.34 Minority-carrier distribution in the base of a lateral pnp transistor in the forward-active region. This distribution is that observed through section X - X ' in Fig. 2.33b.


111

The collector current at which these effects become significant can be calculated for a lateral p n p transistor by equating the minority-carrier concentration given by (2.22) to the equilibrium majority-carrier concentration. Thus

where (2.1) has been substituted for n,, and No is the donor density in the p n p base (npn collector). From (2.23), we can calculate the collector current for the onset of high-level injection in a p n p transistor as

where A is the effective area of the emitter-base junction. Note that this current depends directly on the base doping density in the transistor, and since this is quite low in a lateral pnp transistor, the current density at which this fall-off begins is quite low. Lateral p n p transistors are also widely used in shallow oxide-isolated bipolar IC technologies. The device structure used is essentially identical to that of Fig. 2.33, except that the device area is orders of magnitude smaller and the junction isolation is replaced by oxide isolation. Typical parameters for such a device are listed in Fig. 2.32. As in the case of npn transistors, we see dramatic reductions in device transit time and parasitic capacitance compared to the high-voltage, thick-epi process. The value of P for such a device typically peaks at a collector current of about 50 nA. I

EXAMPLE

Calculate the collector current at which the current gain begins to fall for the p n p structure of Fig. 2 . 3 3 ~The . effective cross-sectional area A of the emitter is the sidewall area of the emitter, which is the p-type diffusion depth multiplied by the periphery of the emitter multiplied by d 2 . A

=

(3 pm)(30 p m

+ 30 p m + 30 p m + 30 pm)

G) -

=

565 km2

=

5.6

X

10-~ cm2

The majority-carrier density is 1015 atoms/cm3 for an epi-layer resistivity of 5 &cm. In addition, we can assume W B = 8 p m and Dp = 10 cm2/s. Substitution of this data in (2.24) gives

The typical lateral p n p structure of Fig. 2 . 3 3 ~ shows a low-current beta of approximately 30 to 50, which begins to decrease at a collector current of a few tens of microamperes, and has fallen to less than 10 at a collector current of l mA. A typical set of parameters for a structure of this type is shown in Fig. 2.35. Note that in the lateral p n p transistor, the substrate junction capacitance appears between the base and the substrate. Substrate pnp Transistors. One reason for the poor high-current performance of the lateral

pnp is the relatively small effective cross-sectional area of the emitter, which results from the lateral nature of the injection. A common application for a p n p transistor is in a ClassB output stage where the device is called on to operate at collector currents in the 10-mA range. A lateral p n p designed to do this would require a large amount of die area. In this application, a different structure is usually used in which the substrate itself is used as the collector instead of a diffused p-type region. Such a substrate p n p transistor in a

1 12

Chapter 2


Typical Value, 5-R-cm,l7-pm epi 44-V Device Parameter

Typical Value, l-&cm, 10-km epi 20-V Device

PF

PR

vA

"7

is [CO

BVCEO

BVcso BVEBO Tk TR

PO rh

rc rrr

junction

junction c

Base-substrate junction

Figure 2.35 Typical parameters for lateral pnp transistors with 900 km2 emitter area in a highvoltage, thick-epi process.

high-voltage, thick-epi process is shown in Fig. 2.36a. Thep-type emitter diffusion for this particular substrate p n p geometry is rectangular with a rectangular hole in the middle. In this hole an nf region is formed with the npn emitter diffusion to provide a contact for the n-type base. Because of the lightly doped base material, the series base resistance can become quite large if the base contact is far removed from the active base region. In this particular structure, the n+ base contact diffusion is actually allowed to come in contact with thep-type emitter diffusion, in order to get the low-resistance base contact diffusion as close as possible to the active base. The only drawback of this, in a substrate pnp structure, is that the emitter-base breakdown voltage is reduced to approximately 7 V. If larger emitter-base breakdown is required, then the p-emitter diffusion must be separated from the n' base contact diffusion by a distance of about 10 p m to 15 km. Many variations exist on the substrate p n p geometry shown in Fig. 2 . 3 6 ~They . can also be realized in thinepi, oxide-isolated processes. The minority-carrier flow in the forward-active region is illustrated in Fig. 2.36b. The principal advantage of this device is that the current flow is vertical and the effective cross-sectional area of the emitter is much larger than in the case of the lateral p n p for the same overall device size. The device is restricted to use in emitter-follower configurations, however, since the collector is electrically identical with the substrate that must be tied to


,

Distance, Pm

t

Substrate I

I

Emitter contact

Base contact

Emitter contact

......................... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .. . . .. .. . .. .. .. ... .. .. ... .. . . . . .. . .. . ... .. . . . . . . . . . : . . . . .- . .' p-type substrate collector . :.: .. .. . . - . . . - . . ' .. ... ... . . . . . . . ... .. . ........ .:.: . . . . . .. .. .. ... .. .. .. .. .. .. .... . .. :::...... . . : ..................... : ........ . . . . . . . . . . ..'. .'. . . ..*..: .

a

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a

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'

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.

h

'

.m

'

.

a

(4 Figure 2.36 (a) Substrate pnp structure in a high-voltage, thick-epi process.

B E

0

P

P Injected n

p-type substrate collector (b)

Figure 2.36 (b)Minority-carrier flow in the substrate pnp transistor.

113

114

Chapter 2


the most negative circuit potential. Other than the better current-handling capability, the properties of substrate p n p transistors are similar to those for lateral p n p transistors since the base width is similar in both cases. An important consideration in the design of substrate p n p structures is that the collector current flows in the p-substrate region, which usually has relatively high resistivity. Thus, unless care is taken to provide an adequate low-resistance path for the collector current, a high series collector resistance can result. This resistance can degrade device performance in two ways. First, large collector currents in the p n p can cause enough voltage drop in the substrate region itself that other substrateepitaxial layer junctions within the circuit can become forward biased. This usually has a catastrophic effect on circuit performance. Second, the effects of the collector-base junction capacitance on the p n p are multiplied by the Miller effect resulting from the large series collector resistance, as described further in Chapter 7. To minimize these effects, the collector contact is usually made by contacting the isolation diffusion immediately adjacent to the substrate p n p itself with metallization. For high-current devices, this isolation diffusion contact is made to surround the device to as great an extent as possible. The properties of a typical substrate p n p transistor in a high-voltage, thick-epi process are summarized in Fig. 2.37. The dependence of current gain on collector current for a typical npn, lateral pnp, and substrate p n p transistor in a high-voltage, thick-epi process are shown in Fig. 2.38. The low-current reduction in P , which is apparent for all three

Parameter

Typical Value, 5-Q-cm, 17-pm epi 44-V Device 5100 pm2 Emitter Area

Typical Value, l-fl-cm, 10-pm epi 20-V Device 5100 pm' Emitter Area

PF PR

vA

rl 1s Ico B V ~ BVCBO BVEBO

~

~

TF TR

PO Yh

rc re1

Base-emitter junction ne

junction nc

Figure 2.37 Typical device parameters for a substrate pnp with 5100 pm2 emitter area in a high-

voltage, thick-epi process.

2.6 Passive Components in Bipolar Integrated Circuits

115

npn transistor with 500 pm2 emitter area

PF

Substrate pnp transistor with 5100 urn2 emitter area

-

Lateral pnp transistor with 900 pm2 emitter area

10 O.1yA

1pA

-

1 0 y A IOOKA l mA Collector current

l 1 0 m A 100mA

Figure 2.38 Current gain as a function of collector current for typical lateral pnp, substrate pnp, and npn transistor geometries in a high-voltage, thick-epi process.

devices, is due to recombination in the base-emitter depletion region, described in Section 1.3.5.

2.6 Passive Components in Bipolar lntegrated Circuits In this section, we describe the structures available to the integrated-circuit designer for realization of resistance and capacitance. Resistor structures include base-diffused, emitterdiffused, ion-implanted, pinch, epitaxial, and pinched epitaxial resistors. Other resistor technologies, such as thin-film resistors, are considered in Section 2.7.3. Capacitance structures include MOS and junction capacitors. Inductors with values larger than a few nanohenries have not proven to be feasible in monolithic technology. However, such small inductors are useful in very-high-frequency integrated circuit^.'^^'^.^^ 2.6.1 Diffused Resistors

In an earlier section of this chapter, the sheet resistance of a diffused layer was calculated. Integrated-circuit resistors are generally fabricated using one of the diffused or ion-implanted layers formed during the fabrication process, or in some cases a combination of two layers. The layers available for use as resistors include the base, the emitter, the epitaxial layer, the buried layer, the active-base region layer of a transistor, and the

116

Chapter 2


Distance,

epi

P-'

P

80

Resistor contact

P-~YP~ diffusion \

Isolation pocket contact

Resistor contact

....-......:........ ..... . . . -. . .. . . .-.. ... . . . .. . .. . . . . . . . .. :.. . .. .. ... .. . . ..:...... substraie : ..:.. . . . . . .. . . . ... ' ..'.. . .: .. .~ . . ...... .. ... ......_.. .._..... : . . .... ._...:.:........... . .. . . . . : p-type ..:.:........ . .. .. ..... ... . ..:..:........ : .

.

Figure 2.39

S

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a

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:'

Base-diffused resistor structure.

epitaxial layer pinched between the base diffusion and the p-type substrate. The choice of layer generally depends on the value, tolerance, and temperature coefficient of the resistor required. Base and Emitter Diffused Resistors. The structure of a typical base-diffused resistor in a high-voltage process is shown in Fig. 2.39. The resistor is formed from the p-type base diffusion for the npn transistors and is situated in a separate isolation region. The epitaxial region into which the resistor structure is diffused must be biased in such a way that the pn junction between the resistor and the epi layer is always reverse biased. For this reason, a contact is made to the n-type epi region as shown in Fig. 2.39, and it is connected either to that end of the resistor that is most positive or to a potential that is more positive than either end of the resistor. The junction between these two regions contributes a parasitic capacitance between the resistor and the epi layer, and this capacitance is distributed along the length of the resistor. For most applications, this parasitic capacitance can be adequately modeled by separating it into two lumped portions and placing one lump at each end of the resistor as illustrated in Fig. 2.40. The resistance of the structure shown in Fig. 2.39 is given by (2.10) as

where L is the resistor length and W is the width. The base sheet resistance Ro lies in the range 100 to 200 IR/O, and thus resistances in the range 50 ll to 50 k l l are practical using


117

Resistor contact 0

+ v2

-

Isolation region contact

Figure 2.40 Lumped model for the base-diffused

resistor.

the base diffusion. The resistance contributed by the clubheads at each end of the resistor can be significant, particularly for small values of LIW. The clubheads are required to allow space for ohmic contact to be made at the ends of the resistor. Since minimization of die area is an important objective, the width of the resistor is kept as small as possible, the minimum practical width being limited to about 1 p m by photolithographic considerations. Both the tolerance on the resistor value and the precision with which two identical resistors can be matched can be improved by the use of wider geometries. However, for a given base sheet resistance and a given resistor value, the area occupied by the resistor increases as the square of its width. This can be seen from (2.10) since the ratio LJW is constant. In shallow ion-implanted processes, the ion-implanted base can be used in the same way to form a resistor. I

EXAMPLE Calculate the resistance and parasitic capacitance of the base-diffused resistor structure shown in Fig. 2.39 for a base sheet resistance of 100 RIO, and an epi resistivity of 2.5 0 - c m . Neglect end effects. The resistance is simply

The capacitance is the total area of the resistor multiplied by the capacitance per unit area. The area of the resistor body is

AI

=

(10 pm)(100 pm)

=

1000 pm2

The area of the clubheads is A2

=

2 (30 pm

X

30 pm) = 1800 pm2

The total zero-bias capacitance is, from Fig. 2.29,

m

As a first-order approximation, this capacitance can be divided into two parts, one placed at each end. Note that this capacitance will vary depending on the voltage at the clubhead with respect to the epitaxial pocket. Emitter-diffused resistors are fabricated using geometries similar to the base resistor, but the emitter diffusion is used to form the actual resistor. Since the sheet resistance of this diffusion is in the 2 to 10 ln/Urange, these resistors can be used to advantage where very low resistance values are required. In fact, they are widely used simply to provide a

118

Chapter 2

Bipolar, MOS, a n d BiCMOS Integrated-Circuit Technology epi/isolation pocket epil isolation pocket I R

I

R

R

I

R

I

I

I

p-type diffusion

\

n+diffusion

\

S~O,

Resistor contact

\

Pinched region 1

Resistor contact

Isolation pocket contact

Figure 2.41 Pinch resistor structure.

crossunder beneath an aluminum metallization interconnection. The parasitic capacitance can be calculated in a way similar to that for the base diffusion. However, these resistors have different temperature dependence from base-diffused resistors and the two types do not track with temperature. Base Pinch Resistors. A third layer available for use as a resistor is the layer that forms the active base region in the npn transistor. This layer is pinched between the n+ emitter and the n-type collector regions, giving rise to the term pinch resistor. The layer can be electrically isolated by reverse biasing the emitter-base and collector-base junctions, which is usually accomplished by connecting the n-type regions to the most positive end of the resistor. The structure of a typical pinch resistor is shown in Fig. 2.41; the n+ diffusion overlaps the p-diffusion so that the n+ region is electrically connected to the n-type epi region. The sheet resistance is in the 5 k R I O to 15 k R / O range. As a result, this resistor allows the fabrication of large values of resistance. Unfortunately, the sheet resistance undergoes the same process-related variations as does the QB of the transistor, which is approximately 250 percent. Also, because the material malung up the resistor itself is relatively lightly doped, the resistance displays a relatively large variation with temperature. Another significant drawback is that the maximum voltage that can be applied across the resistor is limited to around 6 V because of the breakdown voltage between the emitterdiffused top layer and the base diffusion. Nonetheless, this type of resistor has found wide application where the large tolerance and low breakdown voltage are not significant drawbacks.


119

2.6.2 Epitaxial and Epitaxial Pinch Resistors

The limitation of the pinch resistor to low operating voltages disallows its use in circuits where a small bias current is to be derived directly from a power-supply voltage of more than about 7 V using a large-value resistor. The epitaxial layer itself has a sheet resistance much larger than the base diffusion, and the epi layer is often used as a resistor for this application. For example, the sheet resistance of a 17-pm thick, 5-Cl-cm epi layer can be calculated from (2.11) as & = - Pepi =

T

5 Q-cm (17 pm) X (10-4 cmlpm)

=

2.9 kS110

Large values of resistance can be realized in a small area using structures of the type shown in Fig. 2.42. Again, because of the light doping in the resistor body, these resistors display a rather large temperature coefficient. A still larger sheet resistance can be obtained by putting ap-type base diffusion over the top of an epitaxial resistor, as shown in Fig. 2.42. The depth of the p-type base and the thickness of the depletion region between the p-type

epi resistor (no top p+ diffusion) R

Substrate epi-FET with top plate

(two alternate symbols)

Figure 2.42 Epitaxial resistor structure. The p-cap diffusion is optional and forms an epitaxial pinch resistor.

120 Chapter 2


Resistor Type

Sheet p a10

Absolute Tolerance (%)

Matching Tolerance (%)

Base diffused

100t0200

k20

?2(5 p m wide) +-0.2(50 p m wide)

(+l500 to +2000) pprn/"C

Emitter diffused

2 to 10

? 20

52

+600 p p d • ‹ C

Ion implanted

100 to 1000

23

t l(5 p m wide)

Controllable to ? 100ppid•‹C

-CO.l(5O p m wide) P -

Temperature Coefficient

P

Base pinch

2k to 10k

550

+ 10

Epitaxial

2k to 5k

rt 30

25

+3000 ppm/"C

Epitaxial pinch

4k to 10k

-C 50

-C 7

+3000 p p d • ‹ C

Thin film

O.lkto2k

t5to520

2 0.2 to

+2

( 210 to

+200) ppd•‹C

Figure 2.43 Summary of resistor properties for different types of IC resistors.

base and the n-type epi together reduce the thickness of the resistor, increasing its sheet resistance. Such a structure actually behaves as a junction FET, in which the p-type gate is tied to the substrate.17 The properties of the various diffused and pinch-resistor structures are summarized in Fig. 2.43.

2.6.3 Integrated-Circuit Capacitors Early analog integrated circuits were designed on the assumption that capacitors of usable value were impractical to integrate on the chip because they would take too much area, and external capacitors were used where required. Monolithic capacitors of value larger than a few tens of picofarads are still expensive in terms of die area. As a result, design approaches have evolved for monolithic circuits that allow small values of capacitance to be used to perform functions that previously required large capacitance values. The compensation of operational amplifiers is perhaps the best example of this result, and monolithic capacitors are now widely used in all types of analog integrated circuits. These capacitors fall into two categories. First, pn junctions under reverse bias inherently display depletion capacitance, and in certain circumstances this capacitance can be effectively utilized. The drawbacks of junction capacitance are that the junction must always be kept reverse biased, that the capacitance varies with reverse voltage, and that the breakdown voltage is only about 7 V for the emitter-basejunction. For the collector-base junction, the breakdown voltage is higher, but the capacitance per unit area is quite low. By far the most commonly used monolithic capacitor in bipolar technology is the MOS capacitor structure shown in Fig. 2.44. In the fabrication sequence, an additional mask step is inserted to define a region over an emitter diffusion on which a thin layer of silicon dioxide is grown. Aluminum metallization is then placed over this thin oxide, producing a capacitor between the aluminum and the emitter diffusion, which has a capacitance of 0.3 fFlPm2 to 0.5 fFlPm2 and a breakdown voltage of 60 V to 100 V. This capacitor is extremely linear and has a low temperature coefficient. A sizable parasitic capacitance


+-I C,

-

-I =

SiO,

121

CIS0

Substrate

Thin oxide mask

/ Aluminum contact

Figure 2.44 MOS capacitor

structure.

Crso is present between the n-type bottom plate and the substrate because of the depletion capacitance of the epi-substrate junction, but this parasitic is unimportant in many applications.

2.6.4 Zener Diodes As described in Chapter l, the emitter-base junction of the npn transistor structure displays a reverse breakdown voltage of between 6 V and 8 V, depending on processing details. When the total supply voltage is more than this value, the reverse-biased, emitter-base junction is useful as a voltage reference for the stabilization of bias reference circuits, and for such functions as level shifting. The reverse bias I-V characteristic of a typical emitter-base junction is illustrated in Fig. 2.45a. An important aspect of the behavior of this device is the temperature sensitivity of the breakdown voltage. The actual breakdown mechanism is dominated by quantum mechanical tunneling through the depletion layer when the breakdown voltage is below about 6 V; it is dominated by avalanche multiplication in the depletion layer at the larger breakdown voltages. Because these two mechanisms have opposite temperature coefficients of breakdown voltage, the actually observed breakdown voltage has a temperature coefficient that varies with the value of breakdown voltage itself, as shown in Fig. 2.45b.

Chapter 2


A

6.2V

(4

=v Figure 2.45 (a) Current-voltage characteristic of a typical emitter-base Zener diode.

Figure 2.45 (b) Temperature coefficient of junction breakdown voltage as a function of breakdown voltage.

2.6.5 Junction Diodes

Junction diodes can be formed by various connections of the n p n and pnp transistor structures, as illustrated in Fig. 2.46. When the diode is forward biased in the diode connections a, b, and d of Fig. 2.46, the collector-base junction becomes forward biased as well. When this occurs, the collector-base junction injects holes into the epi region that can be collected by the reverse-biased, epi-isolation junction or by other devices in the same isolation region. A similar phenomenon occurs when a transistor enters saturation. As a result, substrate currents can flow that can cause voltage drops in the high-resistivity substrate material, and other epi-isolation junctions within the circuit can become inadvertently forward biased. Thus the diode connections of Fig. 2 . 4 6 ~are usually preferable since they keep the base-collector junction at zero bias. These connections have the additional advantage of resulting in the smallest amount of minority charge storage within the diode under forward-bias conditions.

2.7 Modifications to the Basic Bipolar Process

123

Figure 2.46 Diode connections for n p n and pnp

transistors.

2.7 Modifications to the Basic Bipolar Process The basic high-voltage bipolar IC fabrication process described previously can be modified by the addition of extra processing steps to produce special devices or characteristics.

2.7.1 Dielectric Isolation We first consider a special isolation technique-dielectric isolation-that has been used in digital and analog integrated circuits that must operate at very high speed andor must operate in the presence of large amounts of radiation. The objective of the isolation technique is to electrically isolate the collectors of the devices from each other with a layer of silicon dioxide rather than with a p n junction. This layer has much lower capacitance per unit area than a pn junction, and as a result, the collector-substrate capacitance of the transistors is greatly reduced. Also, the reverse photocurrent that occurs with junction-isolated devices under intense radiation is eliminated. The fabrication sequence used for dielectric isolation is illustrated in Figs. 2.47~-d. The starting material is a wafer of n-type material of resistivity appropriate for the collector region of the transistor. The first step is to etch grooves in the back side of the starting wafer, which will become the isolation regions in the finished circuit. These grooves are about 20 pm deep for typical analog circuit processing. This step, called moat etch, can be accomplished with a variety of techniques, including a preferential etch that allows precise definition of the depth of the moats. Next, an oxide is grown on the surface and a thick layer of polycrystalline silicon is deposited on the surface. This layer will be the mechanical support for the finished wafer and thus must be on the order of 200 p m thick. Next, the starting wafer is etched or ground from the top side until it is entirely removed except for the material left in the isolated islands between the moats, as illustrated in Fig. 2 . 4 7 ~After . the growth of an oxide, the wafer is ready for the rest of the standard process sequence. Note that the isolation of each device is accomplished by means of an oxide layer.

124 Chapter 2


-Si02 n-type wafer

. .. . .. . .. . .. . .. . .. . .. . .. ... .. .. .. .. .. .. .. .. .. ... ... ... ... ... ... ... ... ... ... . . . . . . . . . . . . . . . . . . . Polycrystalline silicon. . . . . . . . . a . . . . . . . . . * . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Grind off starting wafer

(4 Emitter Base

Collector

. . . . . . . . . . .. .. .. .. .. .. .. .. .. .. .. . . . . . . . . . . . . . . . . . . . . . . . . . .. .. .. .. .. . .bxide . . isolation . . . ....... . . . .. . .Polycrystallinesilicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . .

.

.

.

S

.

.

.

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figure 2.47 Fabrication steps in dielectric isolation. (a) Moat etch on bottom of starting wafer. (b) Deposit polycrystalline silicon support layer. ( c )Grind off starting wafer and polish. (d) Carry out standard process, starting with base mask.

2.7.2 Compatible Processing for High-PerformanceActive Devices Many specialized circuit applications require a particular type of active device other than the npn and pnp transistors that result from the standard process schedule. These include high-beta (superbeta) npn transistors for low-input-current amplifiers, MOSFETs for analog switching and low-input-current amplifiers, and high-speed pnp transistors for fast analog circuits. The fabrication of these devices generally requires the addition of one or more mask steps to the basic fabrication process. We now describe these special structures. Superbeta Transistors. One approach to decreasing the input bias current in amplifiers is

to increase the current gain of the input stage transistors.I8 Since a decrease in the base width of a transistor improves both the base transport factor and the emitter efficiency

2.7 Modifications to the Basic Bipolar Process

125

(see Section 1.3.1), the current gain increases as the base width is made smaller. Thus the current gain of the devices in the circuit can be increased by simply increasing the emitter diffusion time and narrowing the base width in the resulting devices. However, any increase in the current gain also causes a reduction in the breakdown voltage BVcEo of the transistors. Section 1.3.4 shows that BVcso BVCEO= --

"JP

where BVcso is the plane breakdown voltage of the collector-base junction. Thus for a given epitaxial layer resistivity and corresponding collector-base breakdown voltage, an increase in beta gives a decrease in BVcEo. As a result, using such a process modification to increase the beta of all the transistors in an operational amplifier is not possible because the modified transistors could not withstand the required operating voltage. The problem of the trade-off between current gain and breakdown voltage can be avoided by fabricating two different types of devices on the same die. The standard device is similar to conventional transistors in structure. By inserting a second diffusion, however, high-beta devices also can be formed. A structure typical of such devices is shown in Fig. 2.48. These devices may be made by utilizing the same base diffusion for both devices and using separate emitter diffusions, or by using two different base diffusions and the same emitter diffusion. Both techniques are used. If the superbeta devices are used only as the input transistors in an operational amplifier, they are not required to have a breakdown voltage of more than about 1 V. Therefore, they can be diffused to extremely narrow base widths, giving current gain on the order of 2000 to 5000. At these base widths, the actual breakdown mechanism is often no longer collector multiplication at all but is due to the depletion layer of the collector-base junction depleting the whole base region and reaching the emitter-base depletion layer. This breakdown mechanism is called punchthrough. An application of these devices in op-amp design is described in Section 6.9.2. MOS Transistors. MOS transistors are useful in bipolar integrated-circuit design because they provide high-performance analog switches and low-input-current amplifiers, and particularly because complex digital logic can be realized in a small area using MOS technology. The latter consideration is important since the partitioning of subsystems into analog and digital chips becomes more and more cumbersome as the complexity of the individual chips becomes greater. Metal-gate p-channel MOS transistors can be formed in a standard high-voltage bipolar analog IC process with one extra mask step.lg If a capacitor mask is included in the Base width

Base width

W, = 0.1 pm -0.2 pm

W , = 0.5 pm -1 pm

Super-P transistor, B=2000-5000

Standard transistor, p = 200-500

Figure 2.48 Superbeta device structure.

126

Chapter 2


C

B

Source

Gate

Drain

SiO,

Si02

. . . . . .. . . . . ....-........ ... ... ... . .. ... ............... ..... .................. . . . . ......................... . . substrate .. ... . .. . .. . . . . . . . . . . . . p-type . . .I... . . ..' ..... ..... ... .. .......... .. .: .. .1 .,.. . ... . . . .... . : . . . . . . . . . . . ... .-. ..... . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . . . . . . a e .

.

...:a

npn transistor

p-channel MOS transistor

Figure 2.49 Compatible p-channel MOS transistor.

original sequence, then no extra mask steps are required. As illustrated in Fig. 2.49, the source and drain are formed in the epi material using the base diffusion. The capacitor mask is used to define the oxide region over the channel and the aluminum metallization forms the metal gate. A major development in IC processing in recent years has been the combination on the same chip of high-performance bipolar devices with CMOS devices in a BiCMOS process. This topic is considered in Section 2.11. Double-Diffused pnp Transistors. The limited frequency response of the lateral p n p transistor places a limitation on the high-frequency performance attainable with certain types of analog circuits. While this problem can be circumvented by clever circuit design in many cases, the resulting circuit is often quite complex and costly. An alternative approach is to use a more complex process that produces a high-speed, double-diffused pnp transistor with properties comparable to those of the npn t r a n s i ~ t o rThe . ~ ~ process usually utilizes three additional mask steps and diffusions: one to form a lightly doped p-type region, which will be the collector of the p p ; one n-type diffusion to form the base of the pnp; and onep-type diffusion to form the emitter of the pnp. A typical resulting structure p well for pnp and third isolation, done after second

Base nCcontact diffusion, same as emitter diffusion for npn Base n- region for pnp, predeposition is a implant

\

epi. Predeposition is a boron implant n+ collector sink for npn, (phosphorous) /done after second epi

\

pnp

U Emitter p+ diffusion for pnp, also forms collector p+contact Second epitaxial growth (n type) First epitaxial growth (n type)

Base and emitter \ of npn

npn

'

Buried layer for npn, done after first epi (arsenic predeposition)

First isolation diffusion, done on starting wafer before first epi

\ pnp buried layer and second isolation, done after first epi. Predeposition is a boron implant

Figure 2.50 Compatible double-diffused p n p process.

2.8 MOS Integrated-Circuit Fabrication

127

is shown in Fig. 2.50. This process requires 10 masking steps and two epitaxial growth steps. Oxide isolation and poly-emitter technology have been incorporated into more advanced versions of this process. 2.7.3 High- Performance Passive Components Diffused resistors have three drawbacks: They have high temperature coefficients, they have poor tolerance, and they are junction-isolated. The latter means that a parasitic capacitance is associated with each resistor, and exposure to radiation causes photocurrents to flow across the isolating junction. These drawbacks can be overcome by the use of thin-film resistors deposited on the top surface of the die over an insulating layer of oxide. After the resistor material itself is deposited, the individual resistors are defined in a conventional way using a masking step. They are then interconnected with the rest of the circuit using the standard aluminum interconnect process. The most common materials for the resistors are nichrome and tantalum, and a typical structure is shown in Fig. 2.51. The properties of the resulting resistors using these materials are summarized in Fig. 2.52.

2.8 MOS Integrated-Circuit Fabrication Fabrication technologies for MOS integrated circuits span a considerably wider spectrum of complexity and performance than those for bipolar technology. CMOS technologies provide two basic types of transistors: enhancement-mode n-channel transistors (which have positive thresholds) and enhancement-mode p-channel transistors (which have negative thresholds). The magnitudes of the threshold voltages of these transistors are typically set to be 0.6 V to 0.8 V so that the drain current resulting from subthreshold conduction with zero gate-source voltage is very small. This property gives standard CMOS digital circuits high noise margins and essentially zero static power dissipation. However, such thresholds do not always minimize the total power dissipation because significant dynamic power is Tantalum resistor Deposited oxide passivation layer

Aluminum contact SiO, Silicon substrate

Tantalum thin-film

/

layer

Section Figure 2.51 Typical thin-film resistor structure.

Range of sheet resistance ( ~ 1 0 ) Temperature coefficient (ppmI0C)

Nichrome

Tantalum

10 to 1000 2 10 to 1150

15 to 2200

10 to 1000

Cermet (Cr-SiO) 30 to 2500 5 0 to f150

Figure 2.52 Properties of monolithic thin-film resistors.

128 Chapter 2


dissipated by charging and discharging internal nodes during logical transitions, especially for high clock rates and power-supply volt age^.^' To reduce the minimum required supply voltage and the total power dissipation for some applications, low-threshold, enhancementmode devices or depletion-mode devices are sometimes used instead of or along with the standard-threshold, enhancement-mode devices. For the sake of illustration, we will consider an example process that contains enhancement-mode n- and p-channel devices along with a depletion-mode n-channel device. CMOS technologies can utilize either a p-type or n-type substrate, with the complementary device type formed in an implanted well of the opposite impurity type. We will take as an example a process in which the starting material is p-type. The starting material is a silicon wafer with a concentration in the range of 1014 to 1015 atoms/cm3. In CMOS technology, the first step is the formation of a well of opposite impurity-type material where the complementary device will be formed. In this case, the well is n-type and is formed by a masking operation and ion implantation of a donor species, typically phosphorus. Subsequent diffusion results in the structure shown in Fig. 2.53. The surface concentration in the well following diffusion is typically between 1015 and 1016 atoms/cm3. Next, a layer of silicon nitride is deposited and defined with a masking operation so that nitride is left only in the areas that are to become active devices. After this masking operation, additional ion implantations are carried out, which increase the surface concentrations in the areas that are not covered by nitride, called the Jield regions. This often involves an extra masking operation so that the surface concentration in the well and that in the substrate areas can be independently controlled by means of separate implants. This increase in surface concentration in the field is necessary because the field regions themselves are MOS transistors with very thick gate oxide. To properly isolate the active devices from one another, the field devices must have a threshold voltage high enough that they never turn on. This can be accomplished by increasing the surface concentration in the field regions. Following the field implants, a local oxidation is performed, which results in the structure shown in Fig. 2.54. n-type well

SiO, (thin)

Figure 2.53 Cross section of sample following implantation and diffusion of the n-type well. Subsequent processing will result in formation of an n-channel device in the unimplanted p-type portions of the substrate and a p-type transistor in the n-type well region.

. -. .. ..._. .. . .. .. .. . .. .. ... .. ... .. . . . ... .. ... .. .. .. . .. .. .. . .. .. .. .. ... .. . . . . . . . . . ..................... . ~ ~ ~ : : ~ : . ~ ~ : ' . : ~ ~ : ; : : ~ . p-typesubstrate ~.~~::.~ .......... .. ........ .... .. ...... .... .. ... .. ... .. ... .. . ..... .... ... .. ... .. ... .. ... .. ... .. ....... .. .. . ...::.::.. . . ...... .. .. ....... .. .. ............... .. .. .. .. ... . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . S . . . . . . . . . .

.. .. . . . ..: .

.

.

a

.

.

.

.

.

.

.

.

.

.

a

.

.

Figure 2.54 Cross section of the sample following field implant steps and field oxidation.

2.8 MOS Integrated-CircuitFabrication

n-Woe itn~lantedlaver

129

Polvsilicon

Figure 2.55 Cross section of the sample following deposition and definition of the polysilicon gate layer. Ion implantations have been performed in the thin-oxide regions to adjust the thresholds of the devices.

After field-oxide growth, the nitride is removed from the active areas, and implantation steps are carried out, which adjust the surface concentrations in what will become the channel of the MOS transistors. Equation 1.139, applied to the doping levels usually found in the active-device areas, gives an n-channel threshold of within a few hundred millivolts of zero, and p-channel threshold of about -2 V. To shift the magnitudes of the device threshold voltages to 0.6 V to 0.8 V, an implantation step that changes the impurity concentration at the surface in the channel regions of the two transistor types is usually included. This shift in threshold can sometimes be accomplished by using a single sheet implant over the entire wafer, which simultaneously shifts the thresholds of both types of devices. More typically, however, two separate masked implants are used, one for each device type. Also, if a depletion-mode n-channel device is included in the process, it is defined at this point by a masking operation and subsequent implant to shift the threshold of the selected devices to a negative value so that they are normally on. Next, a layer of polysilicon is deposited, and the gates of the various devices are defined with a masking operation. The resulting structure is shown in Fig. 2.55. Silicon-gate MOS technology provides three materials that can be used for interconnection: polysilicon, diffusion, and several layers of metal. Unless special provision is made in the process, connections between polysilicon and diffusion layers require a metallization bridge, since the polysilicon layer acts as a mask for the diffused layers. To provide a direct electrical connection between polysilicon and diffusion layers, a buried contact can be included just prior to the polysilicon deposition. This masking operation opens a window in the silicon dioxide under the polysilicon, allowing it to touch the bare silicon surface when it is deposited, forming a direct polysilicon-silicon contact. The depletion device shown in Fig. 2.55 has such a buried contact connecting its source to its gate. Next, a masking operation is performed such that photoresist covers the p-channel devices, and the wafer is etched to remove the oxide from the source and drain areas of the n-channel devices. Arsenic or phosphorus is then introduced into these areas, using either diffusion or ion implantation. After a short oxidation, the process is repeated for thep-channel source and drain areas, where boron is used. The resulting structure is shown in Fig. 2.56. At this point in the process, a layer of silicon dioxide is usually deposited on the wafer, using chemical vapor deposition or some other similar technique. This layer is required to reduce the parasitic capacitance of the interconnect metallization and cannot be thermally grown because of the redistribution of the impurities within the device structures that would result during the growth. Following the oxide deposition, the contact windows are formed with a masking operation, and metallization is deposited and defined with a second masking operation. The final structure is shown in Fig. 2.57. A microscope photograph of such a device is shown in Fig. 2.58. Subsequent fabrication steps are as described in Section 2.3 for bipolar technology.

130 Chapter 2


. . .. ... .. . . . . . . . . ... .. .. .................. . . .. .. . .. .. . .. .. . .. .. . . . . .. .. . .. .. .. _ . . . . . . . ...................... ... ..: ..... ... ... ................. .. .. .. .. ..... ........... .. .. .. .. . .:.p-type substrate :: . . . . . . . . . . . . a . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . ...: , . ...... .. . .. .. ...-. .... .. .. .... . ... ... .. .. ....... .. ......... .. ...... .... ... .. ... .. . .. . . . . . .. . .. ..:. .. :. .. .. . ... . . .

I

.

.

.

.

.

.

.

.

.

.

.

.

.

a

.

.

a

.

.

.

.

.

.

Figure 2.56 Cross section of the sample following the source drain masking and diffusion operations. Metallization

........ .............. ............ ... .. .... .... .. .. . . . . . . . . . . . . . . . . .. .. . . . . .. ... .. .. ... .. .. .. ... . ... .. . . . . .. .. . . . .. .. .. . . _. .. .. .. p-type _ . . .:1 : : .. . .. . . .. . . . . .. ..... .. :........................... ..:..:.. . .: ....:.'. . . . .. .... .. ..substraie ........ : ...:.......:..... .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ............. . . . .. * ..:. . . . . . . . a : .

a

.

.

.

.

.

a

.

.

.

a

n-channel

n-channel

p-channel

transistor

transistor

transistor

Figure 2.57 Cross section of the sample after final process step. The enhancement and depletion n-channel devices are distinguished from each other by the fact that the depletion device has received a channel implantation of donor impurities to lower its threshold voltage, usually to the range of - 1.5 V to -3 V. Polysilicon gate Edge of field oxide region

/

Source metall ization Source

7

7 //

,- contact windows(2) --, /

2

Drain rnetallization

1

Drain contact windows ( 2 )

Figure 2.58 Photomicrograph of a silicon-gate MOS transistor. Visible in this picture are the polysilicon gate, field-oxide region boundary, source and drain metallization, and contact windows. In this particular device, the contact windows have been broken into two smaller rectangular openings rather than a single long one as shown in Fig. 2.59. Large contact windows are frequently implemented with an array of small openings so that all individual contact holes in the integrated circuit have the same nominal geometry. This results in better uniformity of the etch rate of the contact windows and better matching.

2.9 Active Devices in MOS Integrated Circuits

131

2.9 Active Devices in MOS lntegrated Circuits The process sequence described in the previous section results in a variety of device types having different threshold voltages, channel mobilities, and parasitic capacitances. In addition, the sequence allows the fabrication of a bipolar emitter follower, using the well as a base. In this section, we explore the properties of these different types of devices. 2.9.1 n-Channel Transistors

A typical layout of an n-channel MOS transistor is shown in Fig. 2.59. The electrically active portion of the device is the region under the gate; the remainder of the device area simply provides electrical contact to the terminals. As in the case of integrated bipolar transistors, these areas contribute additional parasitic capacitance and resistance. In the case of MOS technology, the circuit designer has even greater flexibility than in the bipolar case to tailor the properties of each device to the role it is to play in the individual circuit application. Both the channel width (analogous to the emitter area in bipolar) and the channel length can be defined by the designer. The latter is analogous to the base width of a bipolar device, which is not under the control of the bipolar circuit designer since it is a process parameter and not a mask parameter. In contrast to a bipolar transistor, the transconductance of an MOS device can be made to vary over a wide range

4

Scale, 1.1"'

Nitride

Polysilicon Contact opening

I

"

i

G

Metal

-.-

,

. . . . .. ........... .... ... ... ... .... : .:. ." ." : .-. :"...'. :. . . .. ................... . . . . . .. .. .. ._ . . .. : : . . : : .' p-type substrate : .': :. . . .. . .... .. . . . . . . . . . . ....... .. ' '

+:

a

.

.

.

.

.

.

Figure 2.59 Example layout of an n-channel silicon-gate MOS transistor. The mask layers are coded as shown.

132 Chapter 2


at a fixed drain current by simply changing the device geometry. The same is true of the gate-source voltage. In making these design choices, the designer must be able to relate changes in device geometry to changes in the electrical properties of the device. To illustrate this procedure, we will calculate the model parameters of the device shown in Fig. 2.59. This device has a drawn channel length of 6 k m and channel width of 50 pm. We will assume the process has the parameters that are summarized in Table 2.1. This is typical of processes with minimum allowed gate lengths of 3 pm. Parameters for more advanced processes are given in Tables 2.2,2.3, and 2.4. Threshold Voltage. In Chapter 1, an MOS transistor was shown to have a threshold volt-

age of

v, =

# l , ,

+ 2+Jf + CQbo x - c o x -

Qss

(2.27)

-

Table 2.1 Summary of Process Parameters for a Typical Silicon-Gate n-Well CMOS Process with 3 p m Minimum Allowed Gate Length

Parameter

Symbol

Value n-Channel Transistor

Substrate doping Gate oxide thickness Metal-silicon work function Channel mobility Minimum drawn channel length Source, drain junction depth Source, drain side diffusion Overlap capacitance per unit gate width Threshold adjust implant (box dist) impurity type effective depth effective surface concentration Nominal threshold voltage Polysilicon gate doping concentration Poly gate sheet resistance Source, drain-bulk junction capacitances (zero bias) Source, drain-bulk junction capacitance grading coefficient Source, drain periphery capacitance (zero bias) Source, drain periphery capacitance grading coefficient Source, drain junction built-in potential Surface-state density Channel-length modulation parameter

Qss 4

10"

Value p-Channel Transistor

Units


133

Table 2.2 Summary of Process Parameters for a Typical Silicon-Gate n-Well CMOS Process with 1.5 p m Minimum Allowed Gate Length

Parameter

Symbol



Units


,+,

where is the metal-silicon work function, is the Fermi level in the bulk silicon, Qb is the bulk depletion layer charge, C,, is the oxide capacitance per unit area, and Q,, is the concentration of surface-state charge. An actual calculation of the threshold is illustrated in the following example. Often the threshold voltage must be deduced from measurements, and a useful approach to doing this is to plot the square root of the drain current as a function of VGS,as shown in Fig. 2.60. The threshold voltage can be determined as the extrapolation of the straight portion of the curve to zero current. The slope of the curve also yields a direct measure of the quantity p,C,, WILeFffor the device at the particular drain-source voltage at which the measurement is made. The measured curve deviates from a straight line at low currents because of subthreshold conduction and at high currents because of mobility degradation in the channel as the carriers approach scattering-limited velocity.

134 Chapter 2


Table 2.3 Summary of Process Parameters for a Typical Silicon-Gate n-Well C M O S Process with 0.8 p m Minimum Allowed Gate Length

Parameter

Symbol



Units


Figure 2.60 Typical experimental variation of drain current as a function of the square root of gate-source voltage in the active region.


135

Table 2.4 Summary of Process Parameters for a Typical Silicon-Gate n-Well CMOS Process with 0.4 p m Minimum Allowed Gate Length

Parameter

Symbol



Units


r

Qss 4

0.04

Pm/v

EXAMPLE Calculate the zero-bias threshold voltage of the unimplanted and implanted NMOS transistors for the process given in Table 2.1. Each of the four components in the threshold voltage expression (2.27) must be calculated. The first term is the metal-silicon work function. For an n-channel transistor with an n-type polysilicon gate electrode, this has a value equal to the difference in the Fermi potentials in the two regions, or approximately -0.6 V. The second term in the threshold voltage equation represents the band bending in the semiconductor that is required to strongly invert the surface. To produce a surface concentration of electrons that is approximately equal to the bulk concentration of holes, the surface potential must be increased by approximately twice the bulk Fermi potential.

136 Chapter 2


The Fermi potential in the bulk is given by

For the unimplanted transistor with the substrate doping given in Table 2.1, this value is 0.27 V. Thus the second term in (2.27) takes on a value of 0.54 V. The value of this term will be the same for the implanted transistor since we are defining the threshold voltage as the voltage that causes the surface concentration of electrons to be the same as that of holes in the bulk material beneath the channel implant. Thus the potential difference between the surface and the bulk silicon beneath the channel implant region that is required to bring this condition about is still given by (2.30), independent of the details of the channel implant. The third term in (2.27) is related to the charge in the depletion layer under the channel. We first consider the unimplanted device. Using (1.137), with a value of N A of 1015 atoms/cm3, Qbo =

-/,

=

,/2 (1.6 X 10-'9)(1015)(11.6 X 8.86 X 10-14)(0.54) (229)

Also, the capacitance per unit area of the 400-A gate oxide is

The resulting magnitude of the third term is 0.16 V. The fourth term in (2.27) is the threshold shift due to the surface-state charge. This positive charge has a value equal to the charge of one electron multiplied by the density of surface states, 10" atoms/cm2, from Table 2.1. The value of the surface-state charge term is then

Using these calculations, the threshold voltage for the unimplanted transistor is For the implanted transistor, the calculation of the threshold voltage is complicated by the fact that the depletion layer under the channel spans a region of nonuniform doping. A precise calculation of device threshold voltage would require consideration of this nonuniform profile. The threshold voltage can be approximated, however, by considering the implanted layer to be approximated by a box distribution of impurities with a depth Xi and a specified impurity concentration Ni.If the impurity profile resulting from the threshold-adjustment implant and subsequent process steps is sufficiently deep so that the channel-substrate depletion layer lies entirely within it, then the effect of the implant is simply to raise the effective substrate doping. For the implant specified in Table 2.1, the average doping in the layer is the sum of the implant doping and the background concentration, or 2.1 X 1016 atoms/cm3. This increases the Qboterm in the threshold voltage to 0.71 V and gives device threshold voltage of 0.47 V. The validity of the assumption regarding the boundary of the channel-substrate depletion layer can be checked by using Fig. 2.29. For a doping level of 2.1 X 1016 atoms/cm3, a one-sided step junction displays a depletion region width of approximately 0.2 pm. Since the depth of the layer is 0.3 pm in this case, the assumption is valid. Alternatively, if the implantation and subsequent diffusion had resulted in a layer that was very shallow, and was contained entirely within the depletion layer, the effect of the implanted layer would be simply to increase the effective value of Qss by an amount equal to the effective implant dose over and above that of the unimplanted transistor. The total


m

137

active impurity dose for the implant given in Table 2.1 is the product of the depth and the impurity concentration, or 6 X 1011 atoms/cm2. For this case, the increase in threshold voltage would have been 1.11 V, giving a threshold voltage of 1.02 V. Body-Effect Parameter. For an unimplanted, uniform-channel transistor, the body-effect parameter is given by (1.141).

The application of this expression is illustrated in the following example. 1

EXAMPLE Calculate the body-effect parameter for the unirnplanted n-channel transistor in Table 2.1. Utilizing in (2.33) the parameters given in Table 2.1, we obtain

I

The calculation of body effect in an implanted transistor is complicated by the fact that the channel is not uniformly doped and the preceding simple expression does not apply. The threshold voltage as a function of body bias voltage can be approximated again by considering the implanted layer to be approximated by a box distribution of impurity of depth Xiand concentration Ni.For small values of body bias where the channel-substrate depletion layer resides entirely within the implanted layer, the body effect is that corresponding to a transistor with channel doping (Ni+ NA).For larger values of body bias for which the depletion layer extends into the substrate beyond the implanted distribution, the incremental body effect corresponds to a transistor with substrate doping NA.A typical variation of threshold voltage as a function of substrate bias for this type of device is illustrated in Fig. 2.61. Effective Channel Length. The gate dimension parallel to current flow that is actually

drawn on the mask is called the drawn channel length L&,,. This is the length referred to on circuit schematics. Because of exposure variations and other effects, the physical length of the polysilicon strip defining the gate may be somewhat larger or smaller than

Implanted transistor

Unimplanted transistor

-0.5 -

Figure 2.61 Typical variation of threshold voltage as a function of substrate bias for n-channel

devices with uniform channel doping (no channel implant) and with nonuniform channel doping resulting from threshold adjustment channel implant.

138 Chapter 2


this value. The actual channel length of the device is the physical length of the polysilicon gate electrode minus the side or lateral diffusions of the source and the drain under the gate. This length will be termed the metallurgical channel length and is the distance between the metallurgical source and drain junctions. Assuming that the lateral diffusion of the source and drain are each equal to Ld, the metallurgical channel length is L = (Ldrwn- 2Ld). When the transistor is biased in the active or saturation region, a depletion region exists between the drain region and the end of the channel. In Chapter 1, the width of this region was defined as Xd. Thus for a transistor operating in the active region, the actual effective channel length Leffis given by (2.35) Ldrwn - 2Ld - Xd A precise determination of Xd is complicated by the fact that the field distribution in the drain region is two-dimensional and quite complex. The drain depletion width Xd can be approximated by assuming that the electric field in the drain region is one-dimensional and that the depletion width is that of a one-sided step junction with an applied voltage of VDs - V,,, where V,, = VGs - V, is the potential at the drain end of the channel with respect to the source. This assumption is used in the following example. As shown in Chapter 1, the small-signal output resistance of the transistor is inversely proportional to the effective channel length. Because the performance of analog circuits often depends strongly on the transistor small-signal output resistance, analog circuits often use channel lengths that are longer than the minimum channel length for digital circuits. This statement is particularly true for unimplanted transistors. Leff =

EXAMPLE

Estimate the effective channel length for the unimplanted and implanted transistors for the process shown in Table 2.1 and the device geometry shown in Fig. 2.59. Assume the device is biased at a drain-source voltage of 5 V and a drain current of 10 pA. Calculate the transconductance and the output resistance. For the calculation of Xd, assume that the depletion region between the drain and the end of the channel behaves like a step junction. At the given drain bias voltage, assume that the values of dXd/dVDs have been deduced from other measurements to be 0.1 pmN for the unimplanted device and 0.02 pmN for the implanted device. The metallurgical channel length is given by

L

=

Ldmn- 2Ld

=

6 k m - (2 X 0.3 pm)

=

5.4 p m

(2.36)

The effective channel length is this length minus the width of the depletion region at the drain Xd. In the active region, the voltage at the drain end of the channel is approximately (VGs - V,). From (l.l66),

If we ignore Xd at first and assume that L = Leff,we obtain a V,, of 0.16 V using the data from the Table 2.1. Thus the voltage across the drain depletion region is approximately 4.84 V. To estimate the depletion-region width, assume it is a one-sided step junction that mainly exists in the lightly doped side. Since the channel and the drain are both n-type regions, the built-in potential of the junction is near zero. The width of the depletion layer can be calculated using (1.14) or the nomograph in Fig. 2.29. Using (1.l4), and assuming ND >> N A ,


139

For the unimplanted device, this equation gives a depletion width of 2.4 km. For the implanted device, the result is 0.5 km, assuming an effective constant channel doping of 2.1 X 1016 atomslcm? Thus the effective channel lengths of the two devices would be approximately 3.0 p m and 4.9 pm, respectively. From (l.l8O), the device transconductance is given by gm = J~P,c,,(wIL)ID

(2.39)

Assuming that pn = 700 cm2N-S,we find g, = J2 (700)(8.6 X 10-8)(50/3.0)(10 X

=

141 p A N

(2.40)

for the unimplanted transistor and

for the implanted transistor. The output resistance can be calculated by using (1.163) and (1.194). For the unimplanted device,

For the implanted device,

Because the depletion region for unimplanted devices is much wider than for implanted devices, the channel length of unimplanted devices must be made longer than for implanted devices to achieve comparable punch-through voltages and small-signal output resistances under identical bias conditions. Effective Channel Width. The effective channel width of an MOS transistor is determined

by the gate dimension parallel to the surface and perpendicular to the channel length over which the gate oxide is thin. Thick field oxide regions are grown at the edges of each transistor by using the local-oxidation process described in Sections 2.2.7 and 2.8. Before the field oxide is grown, nitride is deposited and patterned so that it remains only in areas that should become transistors. Therefore, the width of a nitride region corresponds to the the drawn width of a transistor. To minimize the width variation, the field oxide should grow only vertically; that is, the oxide thickness should increase only in regions were nitride does not cover the oxide. In practice, however, some lateral growth of oxide also occurs near the edges of the nitride during field-oxide growth. As a result, the edges of the field oxide are not vertical, as shown in Figures 2.9 and 2.54. This lateral growth of the oxide reduces the effective width of MOS transistors compared to their drawn widths. It is commonly referred to as the bird's beak because the gradually decreasing oxide thickness in the cross sections of Figures 2.9 and 2.54 resembles the corresponding portion of the profile of a bird. As a result, both the effective lengths and the effective widths of transistors differ from the corresponding drawn dimensions. In analog design, the change in the effective length is usually much more important than the change in the effective width because transistors usually have drawn lengths much less than their drawn widths. As a result, the difference between the drawn and effective width is often ignored. However, this difference is sometimes important, especially when the matching between two ratioed transistors limits the accuracy of a given circuit. This topic is considered in Section 4.2.

140

Chapter 2


Intrinsic Gate-Source Capacitance. As described in Chapter 1, the intrinsic gate-source capacitance of the transistor in the active region of operation is given by

The calculation of this parameter is illustrated in the next example. Overlap Capacitance. Assuming that the source and drain regions each diffuse under the gate by Ld after implantation, the gate-source and gate-drain overlap capacitances are given by col =

WLdCox

(2.45)

This parasitic capacitance adds directly to the intrinsic gate-source capacitance. It constitutes the entire drain-gate capacitance in the active region of operation. Junction Capacitances. Source-substrate and drain-substrate capacitances result from the junction-depletion capacitance between the source and drain diffusions and the substrate. A complicating factor in calculating these capacitances is the fact that the substrate doping around the source and drain regions is not constant. In the region of the periphery of the source and drain diffusions that border on the field regions, a relatively high surface concentration exists on the field side of the junction because of the field threshold adjustment implant. Although approximate calculations can be carried out, the zero-bias value and grading parameter of the periphery capacitance are often characterized experimentally by using test structures. The bulk-junction capacitance can be calculated directly by using (1.21) or can be read from the nomograph in Fig. 2.29. An additional capacitance that must be accounted for is the depletion capacitance between the channel and the substrate under the gate, which we will term C,,. Calculation of this capacitance is complicated by the fact that the channel-substrate voltage is not constant but varies along the channel. Also, the allocation of this capacitance to the source and drain varies with operating conditions in the same way as the allocation of C,,. A reasonable approach is to develop an approximate total value for this junction capacitance under the gate and allocate it to source and drain in the same ratio as the gate capacitance is allocated. For example, in the active region, a capacitance of two-thirds of C,, would appear in parallel with the source-substrate capacitance and none would appear in parallel with the drain-substrate capacitance. EXAMPLE

Calculate the capacitances of an implanted device with the geometry shown in Fig. 2.59. Use the process parameters given in Table 2.1 and assume a drain-source voltage of 5 V, drain current of 10 pA, and no substrate bias voltage. Neglect the capacitance between the channel and the substrate. Assume that Xd is negligibly small. From (2.44), the intrinsic gate-source capacitance is C,,

=

2 WLeffCoX= 3

-

50 pm X 5.4 p m

X

0.86 fF'/p-m2 = 155 fF

(2.46)

From (2.451, the overlap capacitance is given by Thus the total gate-source capacitance is (C,, + Col)or 168 E The gate-drain capacitance is equal to the overlap capacitance, or 12.9 fF.


141

The source- and drain-to-substrate capacitances consist of two portions. The periphery or sidewall part Cjswis associated with that portion of the edge of the diffusion area that is adjacent to the field region. The second portion C j is the depletion capacitance between the diffused junction and the bulk silicon under the source and drain. For the bias conditions given, the source-substrate junction operates with zero bias and the drain-substrate junction has a reverse bias of 5 V. Using Table 2.1, the periphery portion for the sourcesubstrate capacitance is Here, the perimeter is set equal to W + 2L because that is the distance on the surface of the silicon around the part of the source and drain regions that border on field-oxide regions. Since the substrate doping is high along this perimeter to increase the magnitude of the threshold voltage in the field regions, the sidewall capacitance here is dominant. The bulk capacitance is simply the source-diffusion area multiplied by the capacitance per unit area from Table 2. l.

The total capacitance from source to bulk is the sum of these two, or

For the geometry given for this example, the transistor is symmetrical, and the source and drain areas and peripheries are the same. From Table 2.1, both the bulk and periphery capacitances have a grading coefficient of 0.5. As a result, the drain-bulk capacitance is the same as the source-bulk capacitance modified to account for the 5 V reverse bias on = 0.65 V, the junction. Assuming

2.9.2 p-ChannelTransistors

The p-channel transistor in most CMOS technologies displays dc and ac properties that are comparable to the n-channel transistor. One difference is that the transconductance parameter k' of a p-channel device is about one-half to one-third that of an n-channel device because holes have correspondingly lower mobility than electrons. As shown in (1.209), this difference in mobility also reduces the fT of p-channel devices by the same factor. Another difference is that for a CMOS technology with a p-type substrate and ntype wells, the substrate terminal of the p-channel transistors can be electrically isolated since the devices are made in an implanted well. Good use can be made of this fact in analog circuits to alleviate the impact of the high body effect in these devices. For a CMOS process made on an n-type substrate with p-type wells, the p-channel devices are made in the substrate material, which is connected to the highest power-supply voltage, but the n-channel devices can have electrically isolated substrate terminals. The calculation of device parameters forp-channel devices proceeds exactly as for nchannel devices. An important difference is the fact that for the p-channel transistors the threshold voltage that results if no threshold adjustment implant is used is relatively high, usually in the range of 1 to 3 V. This occurs because the polarities of the Q,, term and the work-function term are such that they tend to increase the p-channel threshold voltages while decreasing the n-channel threshold voltages. Thus the p-type threshold adjustment implant is used to reduce the surface concentration by partially compensating the doping

142

Chapter 2


of the n-type well or substrate. Thus in contrast to the n-channel device, thep-channel transistor has an effective surface concentration in the channel that is lower than the bulk concentration, and as a result, often displays a smaller incremental body effect for low values of substrate bias and a larger incremental body effect for larger values of substrate bias. 2.9.3 Depletion Devices

The properties of depletion devices are similar to those of the enhancement device already considered, except that an implant has been added in the channel to make the threshold negative (for an n-channel device). In most respects a depletion device closely resembles an enhancement device with a voltage source in series with the gate lead of value (VtD- VtE),where VtDis the threshold voltage of the depletion-mode transistor and VtEis the threshold voltage of the enhancement-mode transistor. Depletion transistors are most frequently used with the gate tied to the source. Because the device is on with VGS = 0, if it operates in the active region, it operates like a current source with a drain current of

An important aspect of depletion-device performance is the variation of IDss with process variations. These variations stem primarily from the fact that the threshold voltage varies substantially from its nominal value due to processing variations. Since the transistor IDSSvaries as the square of the threshold voltage, large variations in Ims due to process variations often occur. Tolerances of k 4 0 percent or more from nominal due to process variations are common. Because IDss determines circuit bias current and power dissipation, the magnitude of this variation is an important factor. Another important aspect of the behavior of depletion devices stems from the body effect. Because the threshold voltage varies with body bias, a depletion device with VGS = 0 and v,,j # 0 displays a finite conductance in the active region even if the effect of channel-length modulation is ignored. In turn, this finite conductance has a strong effect on the performance of analog circuits that use depletion devices as load elements.

2.9.4 Bipolar Transistors Standard CMOS technologies include process steps that can be used to form a bipolar transistor whose collector is tied to the substrate. The substrate, in turn, is tied to one of the power supplies. Fig. 2.62a shows a cross section of such a device. The well region forms the base of the transistor, and the sourceldrain diffusion of the device in the well forms the emitter. Since the current flow through the base is perpendicular to the surface of the silicon, the device is a vertical bipolar transistor. It is a p n p transistor in processes that utilize p-type substrates as in Fig. 2.62a and an npn transistor in processes that use an n-type substrate. The device is particularly useful in band-gap references, described in Chapter 4, and in output stages, considered in Chapter 5. The performance of the device is a strong function of well depth and doping but is generally similar to the substrate pnp transistor in bipolar technology, described in Section 2.5.2. The main limitation of such a vertical bipolar transistor is that its collector is the substrate and is connected to a power supply to keep the substratep-n junctions reverse biased. Standard CMOS processes also provide another bipolar transistor for which the collector need not be connected to a power supply.22 Figure 2.62b shows a cross section of such a device. As in the vertical transistor, the well region forms the base and a source/drain diffusion forms the emitter. In this case, however, another sourceldrain diffusion forms the collector Cl. Since the current flow through the base is parallel to the surface of the sili-

2.9 Active Devices in MOS Integrated Circuits E

B

P

P

n-type well

143

C (connect to lowest supply)

P

J

p-type substrate

Gate (connect to highest supply) ' 2

(connect to lowest supply)

n-type well p-type substrate

Figure 2.62 ( a )Cross section of a vertical pnp transistor in an n-well CMOS process. (b) Cross section of lateral and vertical pnp transistors in an n-well CMOS process. (c) Schematic of the bipolar transistors in (b).

con, this device is a lateral bipolar transistor. Again, it is a pnp transistor in processes that utilize n-type wells and an n p n transistor in processes that use p-type wells. The emitter and collector of this lateral device correspond to the source and drain of an MOS transistor. Since the goal here is to build a bipolar transistor, the MOS transistor is deliberately biased to operate in the cutoff region. In Fig. 2.6217, for example, the gate of thep-channel transistor must be connected to a voltage sufficient to bias it in the cutoff region. A key point here is that the base width of the lateral bipolar device corresponds to the channel length of the MOS device. One limitation of this structure is that when a lateral bipolar transistor is intentionally formed, a vertical bipolar transistor is also formed. In Fig. 2.62b, the emitter and base connections of the vertical transistor are the same as for the lateral transistor, but the collector is the substrate, which is connected to the lowest supply voltage. When the emitter injects minority carriers into the base, some flow parallel to the surface and are collected by the collector of the lateral transistor Cl. However, others flow perpendicular to the surface and are collected by the substrate C2. Figure 2 . 6 2 ~models this behavior by showing a transistor symbol with one emitter and one base but two collectors. The current Icl is the collector current of the lateral transistor, and Icz is the collector current of the vertical transistor. Although the base current is small because little recombination and reverse injection occur, the undesired current IC2 is comparable to the desired current Icl.To minimize the ratio, the collector of the lateral transistor usually surrounds the emitter, and the emitter area as well as the lateral base width are minimized. Even with these techniques,

144 Chapter 2


however, the ratio of IC211C1is poorly controlled in practice.22~23 If the total emitter current is held constant as in many conventional circuits, variation of IC2/IC1changes the desired collector current and associated small-signal parameters such as the transconductance. To overcome this problem, the emitter current can be adjusted by negative feedback so that the desired collector current is insensitive to variations in IC2/IC1.24 Some important properties of the lateral bipolar transistor, including its PF and fT, improve as the base width is reduced. Since the base width corresponds to the channel length of an MOS transistor, the steady reduction in the minimum channel length of scaled MOS technologies is improving the performance and increasing the importance of the available lateral bipolar transistor.

2.10 Passive Components in MOS Technology In this section, we describe the various passive components that are available in CMOS technologies. Resistors include diffused, poly-silicon, and well resistors. Capacitors include poly-poly, metal-poly, metal-silicon, silicon-silicon, and vertical and lateral metal-metal.

2.10.1 Resistors Diffused Resistors. The diffused layer used to form the source and drain of the n-channel

and p-channel devices can be used to form a diffused resistor. The resulting resistor structure and properties are very similar to the resistors described in Section 2.6.1 on diffused resistors in bipolar technology. The sheet resistances, layout geometries, and parasitic capacitance~are similar. Polysilicon Resistors. At least one layer of polysilicon is required in silicon-gate MOS technologies to form the gates of the transistors, and this layer is often used to form resistors. The geometries employed are similar to those used for diffused resistors, and the resistor exhibits a parasitic capacitance to the underlying layer much like a diffused resistor. In this case, however, the capacitance stems from the oxide layer under the polysilicon instead of from a reverse-biased pn junction. The nominal sheet resistance of most polysilicon layers that are utilized in MOS processes is on the order of 20 R I O to 80 R I O and typically displays a relatively large variation around the nominal value due to process variations. The matching properties of polysilicon resistors are similar to those of diffused resistors. A cross section and plan view of a typical polysilicon resistor are shown in Fig. 2 . 6 3 ~ . The sheet resistance of polysilicon can limit the speed of interconnections, especially in submicron technologies. To reduce the sheet resistance, a silicide layer is sometimes deposited on top of the polysilicon. Silicide is a compound of silicon and a metal, such as tungsten, that can withstand subsequent high-temperature processing with little movement. Silicide reduces the sheet resistance by about an order of magnitude. Also, it has little effect on the oxidation rate of polysilicon and is therefore compatible with conventional CMOS process t e c h n ~ l o g i e sFinally, .~~ silicide can be used on the sourceldrain diffusions as well as on the polysilicon. Well Resistors. In CMOS technologies the well region can be used as the body of a resistor.

It is a relatively lightly doped region and when used as a resistor provides a sheet resistance on the order of 10 kCh/O. Its properties and geometrical layout are much like the epitaxial

2.10 Passive Components in MOS Technology

145

Scale, (pm)

Metal

\

Polysilicon

Metal

/

/

(4

Field oxide

polysilicon resistor.

resistor described in Section 2.6.2 and shown in Fig. 2.42. It displays large tolerance, high voltage coefficient, and high temperature coefficient relative to other types of resistors. Higher sheet resistance can be achieved by the addition of the pinching diffusion just as in the bipolar technology case. MOS Devices as Resistors. The MOS transistor biased in the triode region can be used in many circuits to perform the function of a resistor. The drain-source resistance can be calculated by differentiating the equation for the drain current in the triode region with respect to the drain-source voltage. From (1.153),

Since LIW gives the number of squares, the second term on the right side of this equation gives the sheet resistance. This equation shows that the effective sheet resistance is a function of the applied gate bias. In practice, this sheet resistance can be much higher than polysilicon or diffused resistors, allowing large amounts of resistance to be implemented in a small area. Also, the resistance can be made to track the transconductance of an MOS transistor operating in the active region, allowing circuits to be designed with properties insensitive to variations in process, supply, and temperature. An example of such a circuit is considered in Section 9.4.3. The principal drawback of this form of resistor is the high degree of nonlinearity of the resulting resistor element; that is, the drain-source resistance is not constant but depends on the drain-source voltage. Nevertheless, it can be used very effectively in many applications.

2.10.2 Capacitors in MOS Technology As a passive component, capacitors play a much more important role in MOS technology than they do in bipolar technology. Because of the fact that MOS transistors have virtually infinite input resistance, voltages stored on capacitors can be sensed with little leakage using MOS amplifiers. As a result, capacitors can be used to perform many functions that are traditionally performed by resistors in bipolar technology.

146

Chapter 2


Poly-Poly Capacitors. Many MOS technologies that are used to implement analog functions have two layers of polysilicon. The additional layer provides an efficient capacitor structure, an extra layer of interconnect, and can also be used to implement floating-gate memory cells that are electrically programmable and optically erasable with UV light (EPROM). A typical poly-poly capacitor structure is shown in cross section and plan view in Fig. 2.63b. The plate separation is usually comparable to the gate oxide thickness of the MOS transistors. An important aspect of the capacitor structure is the parasitic capacitance associated with each plate. The largest parasitic capacitance exists from the bottom plate to the underlying layer, which could be either the substrate or a well diffusion whose terminal is electrically isolated. This bottom-plate parasitic capacitance is proportional to the bottomplate area and typically has a value from 10 to 30 percent of the capacitor itself. The top-plate parasitic is contributed by the interconnect metallization or polysilicon that connects the top plate to the rest of the circuit, plus the parasitic capacitance of the transistor to which it is connected. In the structure shown in Fig. 2.63b, the drain-substrate capacitance of an associated MOS transistor contributes to the top-plate parasitic capacitance. The minimum value of this parasitic is technology dependent but is typically on the order of 5 fF to 50 fF. Other important parameters of monolithic capacitor structures are the tolerance, voltage coefficient, and temperature coefficient of the capacitance value. The tolerance on the absolute value of the capacitor value is primarily a function of oxide-thickness variations and is usually in the 10 percent to 30 percent range. Within the same die, however, the matching of one capacitor to another identical structure is much more precise and can typically be in the range of 0.05 percent to 1 percent, depending on the geometry. Because the plates of the capacitor are a heavily doped semiconductor rather than an ideal conductor, some variation in surface potential relative to the bulk material of the plate occurs as voltage is applied to the capacitor.26 This effect is analogous to the variation in surface potential that occurs in an MOS transistor when a voltage is applied to the gate. However, since the impurity concentration in the plate is usually relatively high, the variations in surface potential are small. The result of these surface potential variations is a slight variation in capacitance with applied voltage. Increasing the doping in the capacitor plates

,

First poly layer

SiO,

\

Second coly layer /

. .. .. .. .. .. .. . . . . . . . . . . . . . . . . . ...:.. ..: .. .: ..................................................... . . .... . . . . . . . . . . ... .. .. . .. .. .:.. :. . . . .Si-Substrate. ....... . . :.. .. .. ........ ... .:... ... ....... . . . - . .. . . . . . . . . . . . . . . . . . .. ...... .... ........ ...: .......:.. . .. . .. . ..- ... . . . ..... ..:. . .... .. .... . ... ........ .. . .

.

.

.

.

.

.

.

.

.

a

.

.

.

.

.

a

.

.

.

.

.

.

.

.

.

. . . a . . . . . . . .

. . . S . : .

.

.

.

.

.

.

a

.

.

.

a

.

.

.

.

.

-

a

Figure 2.63 (b) Plan view and cross section of tvuical poly-poly capacitor. 2 L


147

reduces the voltage coefficient. For the impurity concentrations that are typically used in polysilicon layers, the voltage coefficient is usually less than 50 ppmN, 26,27 a level small enough to be neglected in most applications. A variation in the capacitance value also occurs with temperature variations. This variation stems primarily from the temperature variation of the surface potential in the plates previously d e ~ c r i b e d Also, . ~ ~ secondary effects include the temperature variation of the dielectric constant and the expansion and contraction of the dielectric. For heavily doped polysilicon plates, this temperature variation is usually less than 50 ppm/OC.26,27 MOS Transistors as Capacitors. The MOS transistor itself can be used as a capacitor when biased in the triode region, the gate forming one plate and the source, drain, and channel forming another. Unfortunately, because the underlying substrate is lightly doped, a large amount of surface potential variation occurs with changes in applied voltage and the capacitor displays a high voltage coefficient. In noncritical applications, however, it can be used effectively under two conditions. The circuit must be designed in such a way that the device is biased in the triode region when a high capacitance value is desired, and the high sheet resistance of the bottom plate formed by the channel must be taken into account. Other Vertical Capacitor Structures. In processes with only one layer of polysilicon,

alternative structures must be used to implement capacitive elements. One approach involves the insertion of an extra mask to reduce the thickness of the oxide on top of the polysilicon layer so that when the interconnect metallization is applied, a thin-oxide layer exists between the metal layer and the polysilicon layer in selected areas. Such a capacitor has properties that are similar to poly-poly capacitors. Another capacitor implementation in single-layer polysilicon processing involves the insertion of an extra masking and diffusion operation such that a diffused layer with low sheet resistance can be formed underneath the polysilicon layer in a thin-oxide area. This is not possible in conventional silicon-gate processes because the polysilicon layer is deposited before the source-drain implants or diffusions are performed. The properties of such capacitors are similar to the poly-poly structure, except that the bottom-plate parasitic capacitance is that of a pn junction, which is voltage dependent and is usually larger than in the poly-poly case. Also, the bottom plate has a junction leakage current that is associated with it, which is important in some applications. To avoid the need for extra processing steps, capacitors can also be constructed using the metal and poly layers with standard oxide thicknesses between layers. For example, in a process with one layer of polysilicon and two layers of metal, the top metal and the poly can be connected together to form one plate of a capacitor, and the bottom metal can be used to form the other plate. A key disadvantage of such structures, however, is that the capacitance per unit area is small because the oxide used to isolate one layer from another is thick. Therefore, such capacitors usually occupy large areas. Furthermore, the thickness of this oxide changes little as CMOS processes evolve with reduced minimum channel length. As a result, the area required by analog circuits using such capacitors undergoes a much smaller reduction than that of digital circuits in new technologies. This characteristic is important because reducing the area of an integrated circuit reduces its cost. Lateral Capacitor Structures. To reduce the capacitor area, and to avoid the need for extra processing steps, lateral capacitors can be used.28 A lateral capacitor can be formed in one layer of metal by separating one plate from another by spacing S, as shown in Fig. 2.64a. If W is the width of the metal and t is the metal thickness, the capacitance is ( w t ~ l s ) , where E is the dielectric constant. As technologies evolve to reduced feature sizes, the

148

Chapter 2

Bipolar. MOS, and BiCMOS Integrated-CircuitTechnology

=

h

-P Figure 2.64 ( a )Lateral capacitor in one level of metal. (b) Capacitor using two levels of metal in which both lateral and vertical capacitance contribute to the desired capacitance.

minimum metal spacing shrinks but the thickness changes little; therefore, the die area required for a given lateral capacitance decreases in scaled t e c h n o l ~ g i e s Note . ~ ~ that the lateral capacitance is proportional to the perimeter of each plate that is adjacent to the other in a horizontal plane. Geometries to increase this perimeter in a given die area have been proposed.29 Lateral capacitors can be used in conjunction with vertical capacitors, as shown in Fig. 2.64be2' The key point here is that each metal layer is composed of multiple pieces, and each capacitor node is connected in an alternating manner to the pieces in each layer. As a result, the total capacitance includes vertical and lateral components arising between all adjacent pieces. If the vertical and lateral dielectric constants are equal, the total capacitance is increased compared to the case in which the same die area is used to construct only a vertical capacitor when the minimum spacing s < where t is the metal thickness and to, is the oxide thickness between metal layers. This concept can be extended to additional pieces in each layer and additional layers.

Jm,

2.10.3 Latchup in CMOS Technology

The device structures that are present in standard CMOS technology inherently comprise a pnpn sandwich of layers. For example, consider the typical circuit shown in Fig. 2 . 6 5 ~ . It uses one n-channel and one p-channel transistor and operates as an inverter if the two gates are connected together as the inverter input. Figure 2.65b shows the cross section in an n-well process. When the two MOS transistors are fabricated, two parasitic bipolar transistors are also formed: a lateral npn and a vertical pnp. In this example, the source of the n-channel transistor forms the emitter of the parasitic lateral npn transistor, the substrate forms the base, and the n-well forms the collector. The source of the p-channel transistor forms the emitter of a parasitic vertical p n p transistor, the n-well forms the base, and the p-type substrate forms the collector. The electrical connection of these bipolar transistors that results from the layout shown is illustrated in Fig. 2 - 6 5 . In normal operation, all the pn junctions in the structure are reverse biased. If the two bipolar transistors enter the


+y

149

Output

G1

p output

Figure 2.65 (a) Schematic of a typical CMOS device pair. (b) Cross section illustrating the parasitic bipolar transistors. ( c ) Schematic of the parasitic bipolar transistors.

active region for some reason, however, the circuit can display a large amount of positive feedback, causing both transistors to conduct heavily. This device structure is similar to that of a silicon-controlled rectifier (SCR), a widely used component in power-control applications. In power-control applications, the property of the pnpn sandwich to remain in the on state with no externally supplied signal is a great advantage. However, the result of this behavior here is usually a destructive breakdown phenomenon called latchup. The positive feedback loop is labeled in Fig. 2 . 6 5 ~ Feedback . is studied in detail in Chapters 8 and 9. To explain why the feedback around this loop is positive, assume that both transistors are active and that the base current of the npn transistor increases by i for some reason. Then the collector current of the npn transistor increases by P,,,,,i. This current is pulled out of the base of the pnp transistor if R2 is ignored. As a result, the current flowing out of the collector of the pnp transistor increases by Pn,,P,,,i. Finally, this current flows into the base of the npn transistor if R Iis ignored. This analysis shows that the circuit generates a current that flows in the same direction as the initial disturbance; therefore, the feedback is positive. If the gain around the loop is more than unity, the response of the circuit to the initial disturbance continues to grow until one or both of the bipolar transistors saturate. In this case, a large current flows from the positive supply to ground until the power supply is turned off or the circuit burns out. This condition is called latchup. If RI and R2 are large enough that base currents are large compared to the currents in these resistors, the gain around the loop is PnPnPpn,,Therefore, latchup can occur if the product of the betas is greater than unity. For latchup to occur, one of the junctions in the sandwich must become forward biased. In the configuration illustrated in Fig. 2.65, current must flow in one of the resistors between the emitter and the base of one of the two transistors in order for this to occur. This current can come from a variety of causes. Examples are an application of a voltage that is

150

Chapter 2


larger than the power-supply voltage to an input or output terminal, improper sequencing of the power supplies, the presence of large dc currents in the substrate or p- or n-well, or the flow of displacement current in the substrate or well due to fast-changing internal nodes. Latchup is more likely to occur in circuits as the substrate and well concentration is made lighter, as the well is made thinner, and as the device geometries are made smaller. All these trends in process technology tend to increase RI and R2 in Fig. 2.65b. Also, they tend to increase the betas of the two bipolar transistors. These changes increase the likelihood of the occurrence of latchup. The layout of CMOS-integrated circuits must be carried out with careful attention paid to the prevention of latchup. Although the exact rules followed depend on the specifics of the technology, the usual steps are to keep RI and R2, as well as the product of the betas, small enough to avoid this problem. The beta of the vertical bipolar transistor is determined by process characteristics, such as the well depth, that are outside the control of circuit designers. However, the beta of the lateral bipolar transistor can be decreased by increasing its base width, which is the distance between the source of the n-channel transistor and the n-type well. To reduce R I and R2, many substrate and well contacts are usually used instead of just one each, as shown in the simple example of Fig. 2.65. In particular, guard rings of substrate and well contacts are often used just outside and inside the well regions. These rings are formed by using the sourceldrain diffusion and provide low-resistance connections in the substrate and well to reduce series resistance. Also, special protection structures at each input and output pad are usually included so that excessive currents flowing into or out of the chip are safely shunted.

2.1 1 BiCMOS Technology In Section 2.3, we showed that to achieve a high collector-base breakdown voltage in a bipolar transistor structure, a thick epitaxial layer is used (17 p m of 5 In-cm material for 36-V operation). This in turn requires a deepp-type diffusion to isolate transistors and other devices. On the other hand, if a low breakdown voltage (say about 7 V to allow 5-V supply operation) can be tolerated, then a much more heavily doped (on the order of 0.5 Q-cm) collector region can be used that is also much thinner (on the order of 1 pm). Under these conditions, the bipolar devices can be isolated by using the same local-oxidation technique used for CMOS, as described in Section 2.4. This approach has the advantage of greatly reducing the bipolar transistor collector-substrate parasitic capacitance because the heavily doped high-capacitance regions near the surface are now replaced by low-capacitance oxide isolation. The devices can also be packed much more densely on the chip. In addition, CMOS and bipolar fabrication technologies begin to look rather similar, and the combination of high-speed, shallow, ion-implanted bipolar transistors with CMOS devices in a BiCMOS technology becomes feasible (at the expense of several extra processing steps).30 This technology has performance advantages in digital applications because the high current-drive capability of the bipolar transistors greatly facilitates driving large capacitive loads. Such processes are also attractive for analog applications because they allow the designer to take advantage of the unique characteristics of both types of devices. We now describe the structure of a typical high-frequency, low-voltage, oxide-isolated BiCMOS process. A simplified cross section of a high-performance process31 is shown in Fig. 2.66. The process begins with masking steps and the implantation of n-type antimony buried layers into a p-type substrate wherever an npn bipolar transistor or PMOS device is to be formed. A second implant of p-type boron impurities forms a p-well wherever an NMOS device is to be formed. This is followed by the growth of about l p m of n- epi,

Bipolar npn transistor

NMOS

-

Deposited oxide

Collector

-

Field ox~de

-

Source

"

Gate oxide

Figure 2.66 Cross section of a high-performance BiCMOS process.

152 Chapter 2


which forms the collectors of the npn bipolar devices and the channel regions of the PMOS devices. During this and subsequent heat cycles, the more mobile boron atoms out-diffuse and the p-well extends to the surface, whereas the antimony buried layers remain essentially fixed. A masking step defines regions where thick field oxide is to be grown and these regions are etched down into the epi layer. Field-oxide growth is then carried out, followed by a planarization step where the field oxide that has grown above the plane of the surface is etched back level with the other regions. This eliminates the lumpy surface shown in Fig. 2.57 and helps to overcome problems of ensuring reliable metal connections over the oxide steps (so-called step coverage). Finally, a series of masking steps and p- and n-type implants are carried out to form bipolar base and emitter regions, low-resistance bipolar collector contact, and source and drain regions for the MOSFETs. In this sequence, gate oxide is grown, polysilicon gates and emitters are formed, and threshold-adjusting implants are made for the MOS devices. Metal contacts are then made to the desired regions, and the chip is coated with a layer of deposited SiOa. A second layer of metal interconnects is formed on top of this oxide with connections where necessary to the first layer of metal below. A further deposited layer of Si02 is then added with a third layer of metal interconnect and vias to give even more connection flexibility and thus to improve the density of the layout.

2.12 Heterojunction Bipolar Transistors A heterojunction is a p n junction made of two different materials. Until this point, all the junctions we have considered have been hornojunctions because the same material (silicon) has been used to form both the n-type and the p-type regions. In contrast, a junction between an n-type region of silicon and a p-type region of germanium or a compound of silicon and germanium forms a heterojunction. In homojunction bipolar transistors, the emitter doping is selected to be much greater than the base doping to give an emitter injection efficiency y of about unity, as shown by (1.51b). As a result, the base is relatively lightly doped while the emitter is heavily doped in practice. Section 1.4.8 shows that the fT of bipolar devices is limited in part by TF, which is the time required for minority carriers to cross the base. Maximizing fT is , important in some applications such as radio-frequency electronics. To increase f ~the base width can be reduced. If the base doping is fixed to maintain a constant y , however, this approach increases the base resistance rb. In turn, this base resistance limits speed because it forms a time constant with capacitance attached to the base node. As a result, a tradeoff exists in standard bipolar technology between high fT on the one hand and low rb on the other, and both extremes limit the speed that can be attained in practice. One way to overcome this tradeoff is to add some germanium to the base of bipolar transistors to form heterojunction transistors. The key idea is that the different materials on the two sides of the junction have different band gaps. In particular, the band gap of silicon is greater than for germanium, and forming a SiGe compound in the base reduces the band gap there. The relatively large band gap in the emitter can be used to increase the potential barrier to holes that can be injected from the base back to the emitter. Therefore, this structure does not require that the emitter doping be much greater than the base doping to give y = l. As a result, the emitter doping can be decreased and the base doping can be increased in a heterojunction bipolar transistor compared to its homojunction counterpart. Increasing the base doping allows rb to be constant even when the base width is reduced to increase fT. Furthermore, this change also reduces the width of the base-collector depletion

2.13 lnterconnect Delay

153

region in the base when the transistor operates in the forward active region, thus decreasing the effect of base-width modulation and increasing the early voltage V*. Not only does increasing the base doping have a beneficial effect on performance, but also decreasing the emitter doping increases the width of the base-emitter, space-charge region in the emitter, reducing the C j , capacitance and further increasing the maximum speed. The base region of the heterojunction bipolar transistors can be formed by growing a thin epitaxial layer of SiGe using ultra-high vacuum chemical vapor deposition (UHV~CVD)." Since this is an epi layer, it takes on the crystal structure of the silicon in the substrate. Because the lattice constant for germanium is greater than that for silicon, the SiGe layer forms under a compressive strain, limiting the concentration of germanium and the thickness of the layer to avoid defect formation after subsequent high-temperature processing used at the back end of conventional t e c h n o l o g i e ~ In . ~ ~practice, with a base thickness of 0.1 km, the concentration of germanium is limited to about 15 percent so that the layer is unconditionally stable.34 With only a small concentration of germanium, the change in the band gap and the resulting shift in the potential barrier that limits reverse injection of holes into the emitter is small. However, the reverse injection is an exponential function of this barrier; therefore, even a small change in the barrier greatly reduces the reverse injection and results in these benefits. In practice, the concentration of germanium in the base need not be constant. In particular, the UHVICVD process is capable of increasing the concentration of germanium in the base from the emitter end to the collector end. This grading of the germanium concentration results in an electric field that helps electrons move across the base, further reducing TF and increasing fr. The heterojunction bipolar transistors described above can be included as the bipolar transistors in otherwise conventional BiCMOS processes. The key point is that the device processing sequence retains the weli-established properties of silicon integrated-circuit processing because the average concentration of germanium in the base is This characteristic is important because it allows the new processing steps to be included as a simple addition to an existing process, reducing the cost of the new technology. For example, a BiCMOS process with a minimum drawn CMOS channel length of 0.3 pm and heterojunction bipolar transistors with a fT of 50 GHz has been r e p ~ r t e d . 'The ~ use of the heterojunction technology increases the fT by about a factor of two compared to a comparable homojunction technology.

2.13 Interconnect Delay As the minimum feature size allowed in integrated-circuit technologies is reduced, the maximum operating speed and bandwidth have steadily increased. This trend stems partly from the reductions in the minimum base width of bipolar transistors and the minimum channel length of MOS transistors, which in turn increase the fr of these devices. While scaling has increased the speed of the transistors, however, it is also increasing the delay introduced by the interconnections to the point where it could soon limit the maximum speed of integrated circuit^.^' This delay is increasing as the minimum feature size is reduced because the width of metal lines and spacing between them are both being reduced to increase the allowed density of interconnections. Decreasing the width of the lines increases the number of squares for a fixed length, increasing the resistance. Decreasing the spacing between the lines increases the lateral capacitance between lines. The delay is proportional to the product of the resistance and capacitance. To reduce the delay, alternative materials are being studied for use in integrated circuits.

154 Chapter 2


First, copper is replacing aluminum in metal layers because copper reduces the resistivity of the interconnection by about 40 percent and is less susceptible to electromigration and stress migration than aluminum. Electromigration and stress migration are processes in which the material of a conductor moves slightly while it conducts current and is under tension, respectively. These processes can cause open circuits to appear in metal interconnects and are important failure mechanisms in integrated circuits. Unfortunately, however, copper can not simply be substituted for aluminum with the same fabrication process. Two key problems are that copper diffuses through silicon and silicon dioxide more quickly than aluminum, and copper is difficult to plasma etch.36 To overcome the diffusion problem, copper must be surrounded by a thin film of another metal that can endure high-temperature processing with little movement. To overcome the etch problem, a damascene process has been developed.37 In this process, a layer of interconnection is formed by first depositing a layer of oxide. Then the interconnect pattern is etched into the oxide, and the wafer is uniformly coated by a thin diffusionresistant layer and then copper. The wafer is then polished by a chemical-mechanical process until the surface of the oxide is reached, which leaves the copper in the cavities etched into the oxide. A key advantage of this process is that it results in a planar structure after each level of metalization. Also, low-permittivity dielectrics are being studied to replace silicon dioxide to reduce the interconnect capacitance. The dielectric constant of silicon dioxide is 3.9 times more than for air. For relative dielectric constants between about 2.5 and 3.0, polymers have been studied. For relative dielectric constants below about 2.0, the proposed materials include foams and gels, which include air.36 Other important requirements of low-permittivity dielectric materials include low leakage, high breakdown voltage, high thermal conductivity, stability under high-temperature processing, and adhesion to the metal layers.35 The search for a replacement for silicon dioxide is difficult because it is an excellent dielectric in all these ways.

2.14 Economics of Integrated-Circuit Fabrication The principal reason for the growing pervasiveness of integrated circuits in systems of all types is the reduction in cost attainable through integrated-circuit fabrication. Proper utilization of the technology to achieve this cost reduction requires an understanding of the factors influencing the cost of an integrated circuit in completed, packaged form. In this section, we consider these factors. 2.14.1 Yield Considerations in Integrated-CircuitFabrication As pointed out earlier in this chapter, integrated circuits are batch-fabricated on single wafers, each containing up to several thousand separate but identical circuits. At the end of the processing sequence, the individual circuits on the wafer are probed and tested prior to the breaking up of the wafer into individual dice. The percentage of the circuits that are electrically functional and within specifications at this point is termed the wafer-sort yield Y,, and is usually in the range of 10 percent to 90 percent. The nonfunctional units can result from a number of factors, but one major source of yield loss is point defects of various kinds that occur during the photoresist and diffusion operations. These defects can result from mask defects, pinholes in the photoresist, airborne particles that fall on the surface of the wafer, crystalline defects in the epitaxial layer, and so on. If such a defect occurs in the active region on one of the transistors or resistors making up the circuit, a nonfunctional unit usually results. The frequency of occurrence per unit of wafer area of such defects

2.14 Economics of Integrated-Circuit Fabrication

155

Figure 2.67 Conceptual exarnple of the effect of die size on yield.

is usually dependent primarily on the particular fabrication process used and not on the particular circuit being fabricated. Generally speaking, the more mask steps and diffusion operations that the wafer is subjected to, the higher will be the density of defects on the surface of the finished wafer. The existence of these defects limits the size of the circuit that can be economically fabricated on a single die. Consider the two cases illustrated in Fig. 2.67, where two identical wafers with the same defect locations have been used to fabricate circuits of different area. Although the defect locations in both cases are the same, the wafer-sort yield of the large die would be zero. When the die size is cut to one-fourth of the original size, the wafer sort yield is 62 percent. This conceptual example illustrates the effect of die size on wafersort yield. Quantitatively, the expected yield for a given die size is a strong function of the complexity of the process, the nature of the individual steps in the process, and perhaps, most importantly, the maturity and degree of development of the process as a whole and the individual steps within it. Since the inception of the planar process, a steady reduction in defect densities has occurred as a result of improved lithography, increased use of low-temperature processing steps such as ion implantation, improved manufacturing environmental control, and so forth. Three typical curves derived from yield data on bipolar and MOS processes are shownin Fig. 2.68. These are representative of yields for processes ranging from a very complex process with many yield-reducing steps to a very simple process

Die size (rni12 X 1 03)

Figure 2.68 Typically observed yield versus die size for the three different processes, ranging from a very simple, well-developed process (curve A), to a very complex process with many yield-reducing steps (curve C).

156 Chapter 2


carried out in an advanced VLSI fabrication facility. Also, the yield curves can be raised or lowered by more conservative design rules, and other factors. Uncontrolled factors such as testing problems and design problems in the circuit can cause results for a particular integrated circuit to deviate widely from these curves, but still the overall trend is useful. In addition to affecting yield, the die size also affects the total number of dice that can be fabricated on a wafer of a given size. The total number of usable dice on the wafer, called the

Die size (mi12)

Figure 2.69 Gross die per wafer for 4-in., 8-in., and 12-in, wafers.

Die size (rnii2X 103)

Figure 2.70 Net good die per wafer for the three processes in Fig. 2.66, assuming a 4-in. wafer. The same curve can be obtained approximately for other wafer sizes by simply scaling the vertical axis by a factor equal to the wafer area.

2.14 Economics of Integrated-CircuitFabrication

157

gross die per wafer N , is plotted in Fig. 2.69 as a function of die size for several wafer sizes. The product of the gross die per wafer and the wafer-sort yield gives the net good die per wafer, plotted in Fig. 2.70 for the yield curve of Fig. 2.68, assuming a 4-in wafer. Once the wafer has undergone the wafer-probe test, it is separated into individual dice by sawing or scribing and breaking. The dice are visually inspected, sorted, and readied for assembly into packages. This step is termed diefab, and some loss of good dice occurs in the process. Of the original electricaIly good dice on the wafer, some will be lost in the die fab process due to breakage and scratching of the surface. The ratio of the electrically good dice following die fab to the number of electrically good dice on the wafer before die fab is called the die fab yield, YG. The good dice are then inserted in a package, and the electrical connections to each die are made with bonding wires to the pins on the package. The packaged circuits then undergo a final test, and some loss of functional units usually occurs because of improper bonding and handling losses. The ratio of the number of good units at final test to the number of good dice into assembly is called the$nal test yield Yj,. 2.14.2 Cost Considerations in Integrated-CircuitFabrication The principal direct costs to the manufacturer can be divided into two categories: those associated with fabricating and testing the wafer, called the wafer fab cost C,, and those associated with packaging and final testing the individual dice, called the packaging cost C,. If we consider the costs incurred by the complete fabrication of one wafer of dice, we first have the wafer cost itself C,. The number of electrically good dice that are packaged from the wafer is NYwsYdf.The total cost C, incurred once these units have been packaged and tested is

The total number of good finished units N , is

Thus the cost per unit is

The first term in the cost expression is wafer fab cost, while the second is associated with assembly and final testing. This expression can be used to calculate the direct cost of the finished product to the manufacturer as shown in the following example. EXAMPLE

Plot the direct fabrication cost as a function of die size for the following two sets of assumptions. (a) Wafer-fab cost of $75.00, packaging and testing costs per die of $0.06, a die-fab yield of 0.9, and a final-test yield of 0.9. Assume yield curve B in Fig. 2.68. This set of conditions might characterize an operational amplifier manufactured on a medium-complexity bipolar process and packaged in an inexpensive 8 or 14 lead package. From (2.56),

This cost is plotted versus die size in Fig. 2 . 7 1 ~ . (b) A wafer-fab cost of $100.00, packaging and testing costs of $1.00, die-fab yield of

158

Chapter 2


/

4-inch wafer yield CUW~B

.-S

$2.00

C

3

U

a

0

m

Y U

m

Die cost limited

10

20 30 40 Die size (rni12 X 103)

(4

50

C

Figure 2.71 (a) Cost curve for example a.

0.9, and final-test yield of 0.8. Assume yield curve A in Fig. 2.68. This might characterize a complex analogldigital integrated circuit, utilizing an advanced CMOS process and packaged in a large, multilead package. Again, from (2.56),

U

This cost is plotted versus die size in Fig. 2.71b. This example shows that most of the cost comes from packaging and testing for small die sizes, whereas most of the cost comes from wafer-fab costs for large die sizes. This relationship is made clearer by considering the cost of the integrated circuit in terms of cost per unit area of silicon in the finished product, as illustrated in Fig. 2.72 for the examples previously given. These curves plot of the ratio of the finished-product cost to the number of square mils of silicon on the die. The minimum cost per unit area of silicon results

-

4-inch wafer yield curve A

Die size (miI2 X 103)

(b)

Figure 2.7 1 (b) Cost curve for example b.

2.15 Packaging Considerations for Integrated Circuits

159

3

U

0

La $0.80 U a,

5 .- $0.70 C

limited

m

Die cost limited

$0.50 c

0

.- $0.40

N_

E

g

$0.30

I

I

I

l

l

10

20

30

40

I

50 Die area (miI2 X lo3)

I

60

L

Figure 2.72 Cost of finished product in terms of cost per unit of silicon area for the two examples. Because the package and testing costs are lower in example a, the minimum cost point falls at a much smaller die size. The cost per unit of silicon area at large die sizes is smaller for example b because process A gives higher yield at large die sizes.

midway between the package-cost and die-cost limited regions for each example. Thus the fabrication of excessively large or small dice is uneconomical in terms of utilizing the silicon die area at minimum cost. The significance of these curves is that, for example, if a complex analogldigital system, characterized by example b in Fig. 2.72 with a total silicon area of 80,000 square mils is to be fabricated in silicon, it probably would be most economical to build the system on two chips rather than on a single chip. This decision would also be strongly affected by other factors such as the increase in the number of total package pins required for the two chips to be interconnected, the effect on performance of the required interconnections, and the additional printed circuit board space required for additional packages. The shape of the cost curves is also a strong function of the package cost, test cost of the individual product, yield curve for the particular process, and so forth. The preceding analysis concerned only the direct costs to the manufacturer of the fabrication of the finished product; the actual selling price is much higher and reflects additional research and development, engineering, and selling costs. Many of these costs are fixed, however, so that the selling price of a particular integrated circuit tends to vary inversely with the quantity of the circuits sold by the manufacturer.

2.15 Packaging Considerations for lntegrated Circuits The finished cost of an integrated circuit is heavily dependent on the cost of the package in which it is encapsulated. In addition to the cost, the package also strongly affects two other important parameters. The first is the maximum allowable power dissipation in the circuit, and the second is the reliability of the circuit. We will consider these limitations individually.

2.15.1 Maximum Power Dissipation When power is dissipated within a device on the surface of the integrated circuit die, two distinct changes occur. First, the dissipated heat must flow away from the individual

160 Chapter 2

1-

-T +

Tarnbient


Figure 2.73 Electrical analog for the thermal behavior of the die-package structure.

device through the silicon material, which gives rise to temperature gradients across the top surface of the chip. These gradients can strongly affect circuit performance, and their effects are studied further in Chapter 6. Second, the heat must then flow out of the silicon material into the package structure, and then out of the package and to the ambient atmosphere. The flow of heat from the package to the ambient atmosphere can occur primarily by radiation and convection or, if the package is attached to a heat sink, can occur primarily by conduction. This flow of heat to the ambient environment causes the die as a whole to experience an increase in temperature, and in the steady state the average die temperature will be higher than the ambient temperature by an amount proportional to the power dissipation on the chip and the thermal resistance of the package. The steady-state thermal behavior of the dielpackage structure can be analyzed approximately using the electrical model shown in Fig. 2.73. In this model, current is analogous to a flow of heat, and voltage is analogous to temperature. The current source represents the power dissipation on the integrated circuit die. The voltage drop across the resistance O j c represents the temperature drop between the surface of the chip and the outside of the case of the package. Finally, the drop across the resistor O,, represents the temperature drop between the outside of the case and the ambient atmosphere. This representation is only approximate since in reality the structure is distributed and neither the top surface of the die nor the outside of the case is isothermal. However, this equivalent circuit is useful for approximate analysis. The resistance 6 j , is termed the junction-to-case thermal resistance of the package. This resistance varies from about 30•‹C/W for the TO-99 metal package to about 4OC1W for the TO-3 metal power package. These packages are shown in Fig. 2.74 along with the plastic dual-in-line package (DIP). The resistance O,, is termed the case-to-ambient thermal resistance. For the situation in which no heat sink is used, this resistance is determined primarily by the rate at which heat can be transferred from the outside surface of the package to the surrounding air. This rate is dependent on package size and on the rate of airflow around the package, if any. Because thermal radiation effects are present, the rate of heat transfer is not a linear function of case temperature, but the approximation is usually made that this thermal resistance is linear. For the case in which the surrounding air is still and no heat sink is used, the resistance O,, varies from about 100•‹C/Wfor the TO-99 to about 40•‹C/Wfor the TO-3. For integrated circuits that dissipate large amounts of power, the use of a heat sink is often necessary to prevent excessive die temperatures. For this situation, the case-toambient thermal resistance is determined by the heat sink. Heat sinks for use with integrated circuit packages vary from small finned structures having a thermal resistance of about 30•‹C/Wto massive structures achieving thermal resistances in the range of 2OC/W. Effective utilization of low-thermal-resistance heat sinks requires that the package and

2.15 Packaging Considerationsfor Integrated Circuits

16 1

0.040 0.165

Seating plane

4 8 leads

:E; E dia

/rOl 0 01 +0.200 T.P. +

0.291 0.170 0.165 0.100

0.011 0.009

Standoff width

DIP

Figure 2.74 TO-99, TO-3, dual-in-line (DIP) integrated-circuit packages. Dimensions are in inches. The TO-3 is used as shown for three-terminal ICs such as voltage regulators, and in versions with up to 10 leads when required. The basic TO-99 package shape is available in 3,4,6, 8, 10, and 12 lead versions. The DIP package is available in 8, 14, 16, 18, and 22 lead versions. It is available in both hermetically sealed ceramic and plastic versions.

heat sink be in intimate thermal contact with each other. For TO-3 packages, special mica washers and heat-sink grease are used to attach the package to the heat sink while maintaining electrical isolation. The choice of package and heat sink for a particular circuit is dependent on the power to be dissipated in the circuit, the range of ambient temperatures to be encountered, and the maximum allowable chip temperature. These three quantities are related under

162

Chapter 2


steady-state conditions by the following expression:

where Tarnbientis the ambient temperature, Tchipis the chip temperature, and Pd is the power dissipation on the chip. For silicon integrated circuits, reliability considerations dictate that the chip temperature be kept below about 150•‹C, and this temperature is normally taken as the maximum allowable chip temperature. Thus once the maximum ambient temperature is known, the temperature drop across the series combination of Bjc and 8,, is specified. Once the power dissipation is known, the maximum allowable thermal resistance of the package and heat sink can be calculated.

EXAMPLE What is the maximum permissible power dissipation in a circuit in a TO-99 package in still air when the ambient temperature is 70•‹C?125"C? For the TO-99 in still air, (8jc + OC,) = 30•‹C/W+ 100"C/W=130"C/W. From (2.59),

For Tambient = 70•‹C,

and thus

For Tambient = 125"C,

and thus m

2.15.2 Reliability Considerations in Integrated-CircuitPackaging In applications where field servicing is difficult or impossible, or where device failure has catastrophic consequences, circuit reliability becomes a primary concern. The primary parameter describing circuit reliability is the mean time to failure of a sample of integrated circuits under a specified set of worst-case environmental conditions. The study of the various failure modes that can occur in integrated circuits under such conditions and the means to avoid such failures have evolved into a separate discipline, which is beyond the scope of this book. However, integrated circuit packages can be divided into two distinct groups from a reliability standpoint: those in which the die is in a hermetically sealed cavity and those in which the cavity is not hermetically sealed. The former group includes most of the metal can packages and the ceramic dual-in-line and flat packages. The latter group includes the plastic packages. The plastic packages are less expensive to produce and are as reliable as the hermetic packages under mild environmental conditions. The hermetic packages are generally more expensive to produce, but are more reliable under adverse environmental conditions, particularly in the case of high temperaturehigh humidity conditions.

A.2.1 SPICE MODEL-PARAMETER FILES

163

APPENDIX A.2.1 SPICE MODEL-PARAMETER FILES In this section, SPICE model-parameter symbols are compared with the symbols employed

in the text for commonly used quantities. Bipolar 'hansistor Parameters SPICE Symbol IS BF BR VAF RB RE RC TF TR CJE VJE MJE CJC VJC MJC CJS VJS MJS

Text Symbol

Description

1s

Transport saturation current Maximum forward current gain Maximum reverse current gain Forward Early voltage Base series resistance Emitter series resistance Collector series resistance Forward transit time Reverse transit time Zero-bias base-emitter depletion capacitance Base-emitter junction built-in potential Base-emitter junction-capacitance exponent Zero-bias base-collector depletion capacitance Base-collector junction built-in potential Base-collector junction-capacitance exponent Zero-bias collector-substrate depletion capacitance Collector-substrate junction built-in potential Collector-substrate junction-capacitance exponent

PF PR VA rb re X rc TF

7~ +oe

ne CwO

$ 0 ~

nc

ccso $OS

ns

Note: Depending on which version of SPICE is used, a separate diode may have to be included to model base-subsuate capacitance in a lateral pnp transistor.

MOSFET Parameters SPICE Symbol

Text Symbol

VTO

v,

KP GAMMA

k'

CGSO CGDO

Threshold voltage with zero sourcesubstrate voltage Transconductance parameter Threshold voltage parameter

y =

26 f

PHI LAMBDA

= pcox

Description

A

=

Surface potential dXd -- Channel-length modulation parameter k f ~ V D S COI Gate-source overlap - capacitance per unit channel width Col Gate-drain overlap capacitance per unit channel width l

'

-

164 Chapter 2


MOSFET Parameters SPICE Symbol CJ

MJ CJSW

MJSW PB TOX NSUB NSS XJ LD

Text Symbol

Description Zero-bias junction capacitance per unit area from source and drain bottom to bulk (substrate) Source-bulk and drain-bulk junction capacitance exponent (grading coefficient) Zero-bias junction capacitance per unit junction perimeter from source and drain sidewall (periphery) to bulk Source-bulk and drain-bulk sidewall junction capacitance' exponent Source-bulk and drain-bulk junction builtin potential Oxide thickness Substrate doping Surface-state density Source, drain junction depth Source, drain lateral diffusion

PROBLEMS 2.1 What impurity concentration corresponds to a 1 0 - c m resistivity in p-type silicon? In n-type silicon? 2.2 What is the sheet resistance of a layer of 1 Cl-cm material that is 5 p m thick? 2.3 Consider a hypothetical layer of silicon that has an n-type impurity concentration of 10'' cmp3 at the top surface, and in which the impurity concentration decreases exponentially with distance into the silicon. Assume that the concentration has decreased to lle of its surface value at a depth of 0.5 pm, and that the impurity concentration in the sample before the insertion of the ntype impurities was l O I 5 cm-3 p-type. Determine the depth below the surface of the pn junction that results and determine the sheet resistance of the n-type layer. Assume a constant electron mobility of 800 cm2/v-S. Assume that the width of the depletion layer is negligible. 2.4 A diffused resistor has a length of 200 k m and a width of 5 pm. The sheet resistance of the base diffusion is 100 i l / 0 and the emitter diffusion is 5 i l I 0 . The base pinched layer has a sheet resistance of 5 kR/O. Determine the resistance of the resistor if it is an emitter-diffused, base-diffused, or pinch resistor. 2.5 A base-emitter voltage of from 520 mV to 580 mV is measured on a test npn transistor

structure with 10 y A collector current. The emitter dimensions on the test transistor are 100 Frn X 100 pm. Determine the range of values of QB implied by this data. Use this information to calculate the range of values of sheet resistance that will be observed in the pinch resistors in the circuit. Assume a constant electron diffusivity, D,, of 13 cm2/s, and a constant hole mobility of 150 cm2N-S.Assume that the width of the depletion layer is negligible. 2.6 Estimate the series base resistance, series collector resistance r,, base-emitter capacitance, base-collector capacitance, and collector-substrate capacitance of the high-current npn transistor structure shown in Fig. 2.75. This structure is typical of those used as the output transistor in operational amplifiers that must supply up to about 20 mA. Assume a doping profile as shown in Fig. 2.17. 2.7 If the lateral p n p structure of Fig. 2.33a is fabricated with an epi layer resistivity of 0.5 In-cm, determine the value of collector current at which the current gain begins to fall off. Assume a diffusivity for holes of: D, = 10 cm2/s. Assume a base width of 8 pm. 2.8 The substrate p n p of Fig. 2.36a is to be used as a test device to monitor epitaxial layer thickness. Assume that the flow of minority carriers across the base is vertical, and that the width of the emitter-base and collector-base depletion layers is

Problems

V

Distance,

-

km

=$ Buried layer

+ Isolation

i

+ Emitter

////

4

=$ Base

l60 l50 -

I

l E lI I

I

165

Contact opening

+ Metal

I

l40 l30 120 110 l00 90 80 70 60 -

B

5040 -

30 2010 0-

C

I Figure 2.75 Device structure for Problem 2.6.

negligible. Assume that the epi layer resistivity is known to be 2 R-cm by independent measurement. The base-emitter voltage is observed to vary from 525 mV to 560 mV over several wafers at a collector current of 10 pA. What range of epitaxial layer thickness does this imply? What is the corresponding range of sheet resistance that will be observed in the epitaxial pinch resistors? Assume a hole diffusivity of 10 cm2/s, and an electron mobility of 800 cm2/v-S.Neglect the depletion layer thickness. Assume a junction depth of 3 p m for the base diffusion. 2.9 Calculate the total parasitic junction capacitance associated with a 10-kR base-diffused resistor if the base sheet resistance is 100 S1/0and the resistor width is 6 km. Repeat for a resistor width of 12 km. Assume the doping profiles are as shown in Fig. 2.17. Assume the clubheads are 26 pm X 26 km, and that the junction depth is 3 km.Account for sidewall effects. 2.10 For the substrate pnp structure shown in Fig. 2.36a, calculate Is, Cj,, C,, and TF. Assume the doping profiles are as shown in Fig. 2.17. 2.11 A base-emitter voltage of 480 mV is measured on a super-p test transistor with a

l00 p m X 100 p m emitter area at acollector current of 10pA. Calculate the Qsand the sheetresistanceof the base region. Estimate the punch-through voltage in the following way. When the base depletionregion includes the entire base, charge neutrality requires that the number of ionized acceptors in the depletion region in the base be equal to the number of ionized donors in the depletion region on the collector side of the base. [See (1.2).] Therefore, when enough voltage is applied that the depletion region in the base region includes the whole base, the depletion region in the collector must include a number of ionized atoms equal to QB. Since the density of these atoms is known (equal to ND),the width of the depletion layer in the collectorregion at punch-through can be determined. If we assume that the doping in the base N A is much larger than that in the collector No, then (1.15) can be used to find the voltage that will result in this depletion layer width. Repeat this problem for the standard device, assuming a VBE measured at 560 mV. Assume an electron dffusivity D, of 13 cm2/s, and a hole mobility F , of 150 cm2N-S.Assume the epi doping is 1015cmp3.Use E = 1.04 X 10-12F/cmfor the permittivity of silicon. Also, assume cC,. for the collector-basejunction is 0.55 V.

166 Chapter 2


2.12 An MOS transistor biased in the active region displays a drain current of 100 p A at a VGS of 1.5 V and a drain current of 10 p A at a VGSof 0.8 V. Determine the threshold voltage and p,C,,(W/L). Neglect subthreshold conduction and assume that the mobility is constant. 2.13 Calculate the threshold voltage of the p-channel transistors for the process given in Table 2.1. First do the calculation for the unimplanted transistor, then for the case in which the device receives the channel implant specified. Note that this is ap-type implant, so that the effective surface concentration is the difference between the background substrate concentration and the effective concentration in the implant layer. 2.14 An n-channel implanted transistor from the process described in Table 2.1 displays a measured output resistance of 5 M O at a drain current of 10 pA, biased in the active region at a VDs of 5 V. The drawn dimensions of the device are 100 p m by 7 pm. Find the output resistance of a second device on the same technology that has drawn dimensions of 50 p m by 12 p m and is operated at a drain current of 30 p A and a V D , ~ of 5 V. 2.15 Calculate the small-signal model pararneters of the device shown in Fig. 2.76, including g,, gmhrro,CgJ, Cgd,Csb,and Cdb.Assume the transistor is biased at a drain-source voltage of 2 V and a drain current of 20 pA. Use the process parametersthat are specified in Table 2.4. Assume Vss = 1 V. 2.16 The transistor shown in Fig. 2.76 is connected in the circuit shown in Fig. 2.77. The gate is grounded, the substrate is connected to - 1.5 V, and the drain is open circuited. An ideal current source is tied to the source, and this source has a value of zero for t < 0 and 10 p A for t > 0. The source and drain are at an initial voltage of +1.5 V at t = 0. Sketch the voltage at the source and drain from t = 0 until the drain voltage reaches - 1.5 V. For simplicity, assume that the source-substrate and drainsubstrate capacitances are constant at their zerobias values. Assume the transistor has a threshold voltage of 0.6 V.

1

P

3 Gate

c

3

Figure 2.76 Transistor for Problem 2.15.

Figure 2.77 Circuit for Problem 2.16. 2.17 Show that two MOS transistors connected in parallel with channel widths of W1 and W2 and identical channel lengths of L can be modeled as one equivalent MOS transistor whose width is W1 W2 and whose length is L, as shown in Fig. 2.78. Assume the transistors are identical except for their channel widths. 2.18 Show that two MOS transistors connected in series with channel lengths of L1 and L2 and

+

L

Figure 2.78 Circuit for Problem 2.17.

References

identical channel widths of W can be modeled as one equivalent MOS transistor whose width is W and whose length is L1 + L2, as shown in Fig. 2.79. Assume the transistors are identical except for their channel lengths. Ignore the body effect and channel-length modulation.

Assume a wafer-fab cost of $130.00, a package and testing cost of $0.40, a die-fab yield of 0.8, and a final-test yield of 0.8. Work the problem for yield curves A, B, and CinFig. 2.68. Assume a4-in wafer. 2.21 (a) A frequently used empirical approximation for the yield of an IC process as a function of die size is Y,,


2.19 An integrated electronic subsystem is to be fabricated, which requires 40,000 square mils of silicon area. Determine whether the system should be put on one or two chips, assuming that the fabrication cost of the two chips is the only consideration.Assume that the wafer-fab cost is $100.00, the packaging and testing costs are $0.60, the die-fab yield is 0.9, and the final-test yield is 0.8. Assume the process used follows curve B in Fig. 2.68. Repeat the problem assuming yield curve A, and then yield curve C. Assume a 4-in wafer. 2.20 Determine the direct fabrication cost of an integrated circuit that is 150 rnils on a side in size.

167

=

exp (-AIAo)

where A is the die area and A. is a constant. Using Fig. 2.68, determine approximate values of A. for each of the three processes shown. Use the point on the curve at which the yield is e-' to determine Ao. Plot the yield predicted by this expression and compare with the curves shown in Fig. 2.68. (b) Use the expression derived in (a), together with the gross-die-per-wafer curves shown in Fig. 2.69, to develop an analytical expression for the cost of silicon per unit area as a function of die size, YG, Yf,, Cp,and C , for each of the three processes A, B, and C. 2.22 A TO-99 package is used with a heat sink, providing a thermal resistance from case to ambient of 20•‹CtW.The junction-to-case thermal resistance of the TO-99 is 30•‹C/W.Plot the maximum allowable power dissipation in this package as a function of ambient temperature, assuming a maximum die temperature of 150•‹C.

REFERENCES 1. A. S. Grove. Physics and Technology of Semiconductor Devices. Wiley, New York, 1967. 2. R. S. Muller and T. I. Karnins. Device Electronics for lntegrated Circuits. Wiley, New York, 1986. 3. E. M. Conwell. "Properties of Silicon and Germanium," Proc. IRE, Vol. 46, pp. 1281-1300, June 1958. 4. J. C. Lrvin. "Resistivity of Bulk Silicon and of Diffused Layers in Silicon," Be21 System Tech. Journal, Vol. 41, pp. 387-410, March 1962. 5. R. W. Russell and D. D. Culmer. "IonImplanted JFET-Bipolar Monolithic Analog Circuits," Digest of Technical Papers, 1974 International Solid-state Circuits Conference, Philadelphia, PA, pp. 140-141, February 1974. 6. D. J. Hamilton and W. G. Howard. Basic Integrated Circuit Engineering. McGraw-Hill, New York, 1975.

7. Y Tamaki, T. Shiba, I. Ogiwara, T. Kure, K. Ohyu, and T. Nakarnura. "Advanced Device Process Technology for 0.3 p m Self-Aligned Bipolar LSI," Proceedings of the IEEE Bipolar Circuits and Technology Meeting, pp. 166-168, September 1990. 8. M. Kurisu, Y. Sasyama, M. Ohuchi, A. Sawairi, M. Sigiyarna, H. Takemura, and T. Tashiro. "A Si Bipolar 21 GHz Static Frequency Divider," Digest of Technical Papers, 1991 International Solid-State Circuits Conference, pp. 158-159, February 1991. 9. R. M. Burger and R. P. Donovan. Fundamentals of Silicon Integrated Device Technology. Vol. 2, pp. 134-1 36. Prentice-Hall, Englewood Cliffs, NJ, 1968. 10. R. J. Whittier and D. A. Tremere. "Current Gain and Cutoff Frequency Falloff at High

168 Chapter 2


Currents," IEEE Transactions Electron Devices, Vol. ED-16, pp. 39-57, January 1969. 11. H. R. Camenzind. Electronic Integrated Systems Design. Van Nostrand Reinhold, New York, 1972. Copyright O 1972 Litton Educational Publishing, Inc. Reprinted by permission of Van Nostrand Reinhold Company. 12. H. J. DeMan. "The Influence of Heavy Doping on the Emitter Efficiency of a Bipolar Transistor," IEEE Transactions on Electron Devices, Vol. ED-18, pp. 833-835, October 1971. 13. H. C. Lin. Integrated Electronics. HoldenDay, San Francisco, 1967. 14. N. M. Nguyen and R. G. Meyer, "Si ICCompatible Inductors and LC Passive Filters," IEEE Journal of Solid-State Circuits, Vol. 25, pp. 1028-1031, August 1990. 15. J. Y.-C. Chang, A. A. Abidi, and M. Gaitan. "Large Suspended Inductors on Silicon and Their Use in a 2 Frn CMOS RF Amplifier," IEEE Electron Device Letters, Vol. 14, pp. 246-248, May 1993. 16. K. Negus, B. Koupal, J. Wholey, K. Carter, D. Millicker, C. Snapp, and N. Marion. "Highly Integrated Transmitter RFIC with Monolithic Narrowband Tuning for Digital Cellular Handsets," Digest of Technical Papers, 1994 International SolidState Circuits Conference, San Francisco, CA, pp. 38-39, February 1994. 17. P. R. Gray and R. G. Meyer. Analysis and Design of Analog Integrated Circuits, Third Edition, Wiley, New York, 1993. 18. R. J. Widlar. "Design Techniques for Monolithic Operational Amplifiers," IEEE Journal of Solid-State Circuits, Vol. SC-4, pp. 184-191, August 1969. 19. K. R. Stafford, P. R. Gray, and R. A. Blanchard. "A Complete Monolithic SampleMold Amplifier," IEEE Journal of Solid-State Circuits, Vol. SC-9, pp. 381-387, December 1974. 20. P. C. Davis, S. F. Moyer, and V. R. Saari. "High Slew Rate Monolithic Operational Amplifier Using Compatible Complementary pnp's," IEEE Journal of Solid-State Circuits, Vol. SC-9, pp. 340346, December 1974. 21. A. P. Chandrakasan, S. Sheng, and R. W. Brodersen. "Low-Power CMOS Digital Design," IEEE Journal of Solid-State Circuits, Vol. 27, pp. 473-484, April 1992. 22. E. A. Vittoz. "MOS Transistors Operated in the Lateral Bipolar Mode and Their Application in CMOS Technology," IEEE Journal of Solid-State Circuits, Vol. SC-18, pp. 273-279, June 1983.

23. W. T. Holman and J. A. Connelly. "A Compact Low-Noise Operational Amplifier for a 1.2 km Digital CMOS Technology," IEEE Journal of SolidState Circuits, Vol. 30, pp. 710-714, June 1995. 24. C. A. Laber, C. F. Rahim, S. F. Dreyer, G . T. Uehara, P. T. Kwok, and P. R. Gray. "Design Considerations for a High-Performance 3-km CMOS Analog Standard-Cell Library," IEEE Journal of Solid-State Circuits, Vol. SC-22, pp. 181189, April 1987. 25. B. L. Crowder and S. Zirinsky. "1 km MOSFET VLSI Technology: Part VII-Metal Silicide Interconnection Technology-A Future Perspective," IEEE Journal of Solid-State Circuits, Vol. SC-14, pp. 291-293, April 1979. 26. J. L. McCreary. "Matching Properties, and Voltage and Temperature Dependence of MOS Capacitors," ZEEE Journal of Solid-State Circuits, Vol. SC-16, pp. 608-616, December l98 1. 27. D. J. Allstot and W. C. Black, Jr. "Technological Design Considerations for Monolithic MOS Switched-Capacitor Filtering Systems," Proceedings of the IEEE, Vol. 71, pp. 967-986, August 1983. 28. 0. E. Akcasu. "High Capacitance Structure in a Semiconductor Device," U.S. Patent 5,208,725,May 1993. 29. H. Samavati, A. Hajimiri, A. R. Shahani, G. N. Nasserbakht, and T. H. Lee. "Fractal Capacitors," ZEEE Journal of Solid-State Circuits, Vol. 33, pp. 2035-2041, December 1998. 30. A. R. Alvarez. BiCMOS Technology and Applications. Kluwer Academic Publishers, Dordrecht, The Netherlands, 1989. 31. J. L. de Jong, R. Lane, B. van Schravendijk, and G. Conner. "Single Polysilicon Layer Advanced Super High-speed BiCMOS Technology," Proceedings of the ZEEE Bipolar Circuits and Technology Meeting, pp. 182-185, September 1989. 32. D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. CrabbC, J. Y.-C. Sun, B. S. Meyerson, and T. Tice. "SiISiGe Epitaxial-Base Transistors-Part I: Materials, Physics, and Circuits," IEEE Transactions on Electron Devices, Vol. 42, pp. 455-468, March 1995. 33. J. D. Cressler, D. L. Harame, J. H. Comfort, J. M. C. Stork, B. S. Meyerson, and T. E. Tice. "Silicon-Germanium Heterojunction Bipolar Technology: The Next Leap in Silicon?Wigest of Technical Papers, 1994 International Solid-State Circuits Conference, San Francisco, CA, pp. 2427, February 1994.

References

l69

34. D. L. Harame, J. H. Comfort, J. D. Cressler, tional Technology Roadmap for Semiconductors," E. F. CrabbC, J. Y.-C. Sun, B. S. Meyerson, and IEEE International Interconnect Technology Conference, pp. 3-6, June 1998. T. Tice. ''SiISiGe Epitaxial-Base Transistors-Part 11: Process Integration and Analog Applications," 37. D. Edelstein, J. Heidenreich, R. Goldblatt, lEEE Transactions on Electron Devices, Vol. 42, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, pp. 469-482, March 1995. W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz, L. Su, S. Luce, and 35. M. T. Bohr. "Interconnect Scaling-The Real Limiter to High Performance ULSI," Techni- J. Slattery. "Full Copper Wiring in a Sub-0.25 cal Digest, International Electron Devices Meet- p m CMOS ULSI Technology," IEEE International Electron Devices Meeting, pp. 773-776, ing, pp. 24 1-244, December 1995. December 1997. 36. C. S. Chang, K. A. Monnig, and M. MelliarSmith. "Interconnection Challenges and the Na-

Single-Transistor and MultipleTransistor Amplifiers The technology used to fabricate integrated circuits presents a unique set of componentcost constraints to the circuit designer. The most cost-effective circuit approach to accomplish a given function may be quite different when the realization of the circuit is to be in monolithic form as opposed to discrete transistors and passive elements.' As an illustration, consider the two realizations of a three-stage audio amplifier shown in Figs. 3.1 and 3.2. The first reflects a cost-effective solution in the context of discrete-component circuits, since passive components such as resistors and capacitors are less expensive than the active components, the transistors. Hence, the circuit contains a minimum number of transistors, and the interstage coupling is accomplished with capacitors. However, for the case of monolithic construction, a key determining factor in cost is the die area used. Capacitors of the values used in most discrete-component circuits are not feasible and would have to be external to the chip, increasing the pin count of the package, which increases cost. Therefore, a high premium is placed on eliminating large capacitors, and a dc-coupled circuit realization is very desirable. A second constraint is that the cheapest component that can be fabricated in the integrated circuit is the one that occupies the least area, usually a transistor. Thus a circuit realization that contains the minimum possible total resistance while using more active components may be ~ p t i m u r n . Furthermore, ~,~ an important application of analog circuits is to provide interfaces between the real world and digital circuits. In building digital integrated circuits, CMOS technologies have become dominant because of their high densities and low power dissipations. To reduce the cost and increase the portability of mixed-analog-and-digital systems, both increased levels of integration and reduced power dissipations are required. As a result, we are interested in building analog interface circuits in CMOS technologies. The circuit of Fig. 3.2 reflects these constraints. It uses a CMOS technology and many more transistors than in Fig. 3.1, has less total resistance, and has no coupling capacitors. A differential pair is used to allow direct coupling between stages, while transistor current sources provide biasing without large amounts of resistance. In practice, feedback would be required around the amplifier shown in Fig. 3.2 but is not shown for simplicity. Feedback is described in Chapter 8. The next three chapters analyze various circuit configurations encountered in linear integrated circuits. In discrete-component circuits, the number of transistors is usually minimized. The best way to analyze such circuits is usually to regard each individual transistor as a stage and to analyze the circuit as a collection of single-transistor stages. A typical monolithic circuit, however, contains a large number of transistors that perform many functions, both passive and active. Thus monolithic circuits are often regarded as a collection of subcircuits that perform specific functions, where the subcircuits may contain many transistors. In this chapter, we first consider the dc and low-frequency properties of the simplest subcircuits: common-emitter, common-base, and common-collector singletransistor amplifiers and their counterparts using MOS transistors. We then consider some multi-transistor subcircuits that are useful as amplifying stages. The most widely used of

3.1 Device Model Selection for Approximate Analysis of Analog Circuits

17 1

* Figure 3.1 Typical discrete-component realization of an audio amplifier.

Figure 3.2 Typical CMOS integrated-circuit realization of an audio amplifier.

these multi-transistor circuits are the differential pairs, which are analyzed extensively in this chapter.

3.1 Device ModelSelection for Approximate Analysis of Analog Circuits Much of this book is concerned with the salient performance characteristics of a variety of subcircuits commonly used in analog circuits and of complete functional blocks made up of these subcircuits. The aspects of the performance that are of interest include the dc currents and voltages within the circuit, the effect of mismatches in device characteristics on these voltages and currents, the small-signal, low-frequency input and output resistance, and the voltage gain of the circuit. In later chapters, the high-frequency, small-signal behavior of circuits is considered. The subcircuit or circuit under investigation is often one of considerable complexity, and the most important single principle that must be followed to achieve success in the hand analysis of such circuits is selecting the simplest possible

172

Chapter 3

Single-Transistor and Multiple-Transistor Amplifiers

model for the devices within the circuit that will result in the required accuracy. For example, in the case of dc analysis, hand analysis of a complex circuit is greatly simplified by neglecting certain aspects of transistor behavior, such as the output resistance, which may result in a 10 to 20 percent error in the dc currents calculated. The principal objective of hand analysis, however, is to obtain an intuitive understanding of factors affecting circuit behavior so that an iterative design procedure resulting in improved performance can be carried out. The performance of the circuit can at any point in this cycle be determined precisely by computer simulation, but this approach does not yield the intuitive understanding necessary for design. Unfortunately, no specific rules can be formulated regarding the selection of the simplest device model for analysis. For example, in the dc analysis of bipolar biasing circuits, assuming constant base-emitter voltages and neglecting transistor output resistances often provides adequate accuracy. However, certain bias circuits depend on the nonlinear relation between the collector current and base-emitter voltage to control the bias current, and the assumption of a constant VBEwill result in gross errors in the analyses of these circuits. When analyzing the active-load stages in Chapter 4, the output resistance must be considered to obtain meaningful results. Therefore, a key step in every analysis is to inspect the circuit to determine what aspects of the behavior of the transistors strongly affect the performance of the circuit, and then simplify the model(s) to include only those aspects. This step in the procedure is emphasized in this and the following chapters.

3.2 Two-Port Modeling of Amplifiers The most basic parameter of an amplifier is its gain. Since amplifiers may be connected to a wide variety of sources and loads, predicting the dependence of the gain on the source and load resistance is also important. One way to observe this dependence is to include these resistances in the amplifier analysis. However, this approach requires a completely new amplifier analysis each time the source or load resistance is changed. To simplify this procedure, amplifiers are often modeled as two-port equivalent networks. As shown in Fig. 3.3, two-port networks have four terminals and four port variables (a voltage and a current at each port). A pair of terminals is a port if the current that flows into one terminal is equal to the current that flows out of the other terminal. To model an amplifier, one port represents the amplifier input characteristics and the other represents the output. One variable at each port can be set independently. The other variable at each port is dependent on the two-port network and the independent variables. This dependence is expressed by two equations. We will focus here on the admittance-parameter equations, where the terminal currents are viewed as dependent variables controlled by the independent terminal voltages because we usually model transistors with voltage-controlled current sources. If the network is linear and contains no independent sources, the admittance-parameter equations are:

Two-port network

"1 il

'2

Figure 3.3 Two-port-network block diagram.

3.2 Two-Port Modeling of Amplifiers il

173

i2 -C-

V1

-

Figure 3.4 Admittanceparameter, two-port equivalent circuit.

The voltages and currents in these equations are deliberately written as small-signal quantities because transistors behave in an approximately linear way only for small signals around a fixed operating point. An equivalent circuit for these equations is shown in Fig. 3.4. The parameters can be found and interpreted as follows: il v1

I vz = O

=

il yl2 = v2

I ,, =o

= Reverse transconductance with the input short-circuited

y11 =

-

Input admittance with the output short-circuited

(3.3) (3.4)

i2

I V 2 =0 = Forward transconductance with the output short-circuited

(3.5)

i2

I

(3.6)

y21

= v1

y22

= v2

=0

=

Output admittance with the input short-circuited

The yl2 parameter represents feedback in the amplifier. When the signal propagates back from the output to the input as well as forward from the input to the output, the amplifier is said to be bilateral. In many practical cases, especially at low frequencies, this feedback is negligible and yl2 is assumed to be zero. Then the amplifier is unilateral and characterized by the other three parameters. Since the model includes only one transconductance when y12 = 0, y21 is usually referred to simply as the short-circuit transconductance, which will be represented by G, in this book. When an amplifier is unilateral, the calculation of yll is simplified from that given in (3.3) because the connections at the output port do not affect the input admittance when ylz = 0. Instead of calculating yll and y22, we will often calculate the reciprocals of these parameters, or the input and output impedances Zi = l/yll and 2, = I I Y ~as~ shown , in the unilateral two-port model of Fig. 3.5a. Also, instead of calculating the short-circuit transconductance G, = y21, we will sometimes calculate the open-circuit voltage gain a,. This substitution is justified by conversion of the Norton-equivalent output model shown in Fig. 3.5a to the Thtvenin-equivalent output model shown in Fig. 3.5b. In general, finding

Unilateral two-port equivalent circuits with (a)Norton output model (b) ThCvenin output model. Figure 3.5

(b)

174

Chapter 3 m Singie-Transistor and Muitiple-Transistor Amplifiers

Figure 3.6 Example of loading at the input and output of an amplifier modeled by a two-port equivalent circuit.

any two of the three parameters including G,, Z,, and a, specifies the third parameter because

Once two of these parameters and the input impedance are known, calculation of the effects of loading at the input and output ports is possible. At low frequencies, the input and output impedances are usually dominated by resistances. Therefore, we will characterize the low-frequency behavior of many amplifiers in this book by finding the input and output resistances, Ri and R,, as well as G, or a , .

EXAMPLE A two-port model of a unilateral amplifier is shown in Fig. 3.6. Assume Ri = 1 kQ, R, = l MSZ, and G, = l M.Let Rs and RL represent the source resistance of the input generator and load resistance, respectively. Find the low-frequency gain vOutlvin,assuming that the input is an ideal voltage source and the output is unloaded. Repeat, assuming that Rs = 1 k R a n d R L = IMSZ. The open-circuit voltage gain of the two-port amplifier model by itself from v1 to vOut is

Since the source and input resistances form a voltage divider, and since the output resistance appears in parallel with the load resistance, the overall gain from vin to vOutis

U

With an ideal voltage source at the input and no load at the output, Rs = 0, RL + m, and v ~ = -~ 1000. ~ With~ Rs v= 1 kSZ ~ and~ RL = 1 MSZ, the gain is reduced by a factor of four to ~ o , = ~ -0.5(1 l ~ ~ mAN)(5OO ~ kQ) = -250.

3.3 Basic Single-Transistor Amplifier Stages Bipolar and MOS transistors are capable of providing useful amplification in three different configurations. In the common-emitter or common-source configuration, the signal is applied to the base or gate of the transistor and the amplified output is taken from the collector or drain. In the common-collector or common-drain configuration, the signal is applied to the base or gate and the output signal is taken from the emitter or source. This configuration is often referred to as the emitter follower for bipolar circuits and the source

3.3 Basic Single-TransistorAmplifier Stages

175

follower for MOS circuits. In the common-base or common-gate configuration, the signal is applied to the emitter or the source, and the output signal is taken from the collector or the drain. Each of these configurations provides a unique combination of input resistance, output resistance, voltage gain, and current gain. In many instances, the analysis of complex multistage amplifiers can be reduced to the analysis of a number of single-transistor stages of these types. We showed in Chapter 1 that the small-signal equivalent circuits for the bipolar and MOS transistors are very similar, with the two devices differing mainly in the values of some of their small-signal parameters. In particular, MOS transistors have essentially infinite input resistance from the gate to the source, in contrast with the finite r, of bipolar transistors. On the other hand, bipolar transistors have a g, that is usually an order of magnitude larger than that of MOS transistors biased with the same current. These differences often make one or the other device desirable for use in different situations. For example, amplifiers with very high input impedance are more easily realized with MOS transistors than with bipolar transistors. However, the higher g, of bipolar transistors makes the realization of high-gain amplifiers with bipolar transistors easier than with MOS transistors. In other applications, the exponential large-signal characteristics of bipolar transistors and the square-law characteristics of MOS transistors may each be used to advantage. As described in Chapter 2, integrated-circuit processes of many varieties now exist. Examples include processes with bipolar or MOS transistors as the only active devices and combined bipolar and CMOS devices in BiCMOS processes. Because the more complex processes involve more masking steps and are thus somewhat more costly to produce, integrated-circuit designers generally use the simplest process available that allows the desired circuit specifications to be achieved. Therefore, designers must appreciate the similarities and differences between bipolar and MOS transistors so that appropriate choices of technology can be made.

3.3.1 Common-Emitter Configuration The resistively loaded common-emitter (CE) amplifier configuration is shown in Fig. 3.7. The resistor RC represents the collector load resistance. The short horizontal line labeled Vcc at the top of RC implies that a voltage source of value Vcc is connected between that point and ground. This symbol will be used throughout the book. We first cakulate the dc transfer characteristic of the amplifier as the input voltage is increased in the positive direction from zero. We assume that the base of the transistor is driven by a voltage source of value Vi. When V iis zero, the transistor operates in the cutoff state and no collector

$ 5 r -

v,

-

--

Figure 3.7 Resistively loaded common-emitter

amplifier.

176

Chapter 3 m Single-Transistor a n d Multiple-TransistorAmplifiers

v,

L-

Ib + This diode has a saturation current of JLVb,

-

1s -

PF

T

Figure 3.8 Large-signal

equivalent circuit valid when the transistor is in the forward-active = PFIO region. The saturation current of the equivalent base-emitter diode is

current flows other than the leakage current lco.As the input voltage is increased, the transistor enters the forward-active region, and the collector current is given by Vi Is expVT The equivalent circuit for the amplifier when the transistor operates in the forward-active region was derived in Chapter 1 and is repeated in Fig. 3.8. Because of the exponential relationship between I, and Vbe,the value of the collector current is very small until the input voltage reaches approximately 0.5 V. As long as the transistor operates in the forward-active region, the base current is equal to the collector current divided by PF, or

Ic

=

The output voltage is equal to the supply voltage, Vcc, minus the voltage drop across the collector resistor: Vi Vcc - Rcls exp VT When the output voltage approaches zero, the collector-base junction of the transistor becomes forward biased and the device enters saturation. Once the transistor becomes saturated, the output voltage and collector current take on nearly constant values: V,

=

Vcc

- I, RC =

The base current, however, continues to increase with further increases in Vi.Therefore, the forward current gain Ic/Ibdecreases from PF as the transistor leaves the forward-active region of operation and moves into saturation. In practice, the current available from the signal source is limited. When the signal source can no longer increase the base current, Vi is maximum. The output voltage and the base current are plotted as a function of the input voltage in Fig. 3.9. Note that when the device operates in the forward-active region, small changes in the input voltage can give rise to large changes in the output voltage. The circuit thus provides voltage gain. We now proceed to calculate the voltage gain in the forward-active region. While incremental performance parameters such as the voltage gain can be calculated from derivatives of the large-signal analysis, the calculations are simplified by using the small-signal hybrid-.rr model for the transistor developed in Chapter 1. The small-signal

3.3 Basic Single-Transistor Amplifier Stages

vcc

177

,

Forward-active region Saturation region V~~ (sat)

I--L ; 1 1

0.5 I,, A

4

Spturation ;region

Saturation region

I 1.5

Figure 3.9 Output voltage and base current as a function of Vi for the common-emitter circuit.

equivalent circuit for the common-emitter amplifier is shown in Fig. 3.10. Here we have neglected rb, assuming that it is much smaller than r,. We have also neglected r,. This equivalent circuit does not include the resistance of the load connected to the amplifier output. The collector resistor RC is included because it is usually present in some form as a biasing element. Our objective is to characterize the amplifier alone so that the voltage gain can then be calculated under arbitrary conditions of loading at the input and output. Since the common-emitter amplifier is unilateral when r, is neglected, we will calculate the small-signal input resistance, transconductance, and output resistance of the circuit as explained in Section 3.2. The input resistance is the ThCvenin-equivalent resistance seen looking into the input. For the CE amplifier,

The transconductance G, is the change in the short-circuit output current per unit change of input voltage and is given by

Figure 3.10 Small-signal equivalent circuit for the CE amplifier.

178 Chapter 3

Single-Transistor and Multiple-TransistorAmplifiers

Equation 3.14 shows that the transconductance of the CE amplifier is equal to the transconductance of the transistor. The output resistance is the ThCvenin-equivalent resistance seen looking into the output with the input shorted, or

The open-circuit, or unloaded, voltage gain is

If the collector load resistor RC is made very large, then a, becomes

where Ic is the dc collector current at the operating point, VT is the thermal voltage, VA is the Early voltage, and 77 is given in (1.114). This gain represents the maximum lowfrequency voltage gain obtainable from the transistor. It is independent of the collector bias current for bipolar transistors, and the magnitude is approximately 5000 for typical npn devices. Another parameter of interest is the short-circuit current gain ai. This parameter is the ratio of i, to ii when the output is shorted. For the CE amplifier,

EXAMPLE

(a) Find the input resistance, output resistance, voltage gain, and current gain of the common-emitter amplifier in Fig. 3.11a. Assume that Ic = 100 pA, PO = 100, rb = 0, ca. and r, +

ai =

PO = 100

(b) Calculate the voltage gain of the circuit of Fig. 3.1 lb. Assume that VBIAsis adjusted so that the dc collector current is maintained at 100 pA.

3.3 B a s k Single-Transistor Amplifier Stages

179

Figure 3. l l (a) Example amplifier circuit. (b) Circuit for calculation of voltage gain with typical source and load resistance values.

3.3.2 Common-Source Configuration The resistively loaded cornmon-source (CS) amplifier configuration is shown in Fig. 3.12a using an n-channel MOS transistor. The corresponding small-signal equivalent circuit is shown in Fig. 3.12b. As in the case of the bipolar transistor, the MOS transistor is cutoff for Vi = 0 and thus Id = 0 and V, = VDD.As Vi is increased beyond the threshold voltage Vt, nonzero drain current flows and the transistor operates in the active region (which is often called saturation for MOS transistors) when V, > VGs - V,. The large-signal model

180

Chapter 3 m Single-Transistor and Multiple-Transistor Amplifiers

Figure 3.12 (a) Resistively loaded, common-source amplifier. (b) Small-signal equivalent circuit for the common-source amplifier.

(4

of Fig. 1.30 can then be used together with (1.157) to derive

The output voltage is equal to the drain-source voltage and decreases as the input increases. When V, < VGS- V t ,the transistor enters the triode region, where its output resistance becomes low and the small-signal voltage gain drops dramatically. In the triode region, the output voltage can be calculated by using (1.152) in (3.19). These results are illustrated in the plot of Fig. 3.13. The slope of this transfer characteristic at any operating

I I

I I l I

I

o

I f Vt

l

I

2

1 3

Figure 3.13 Output voltV,(V)

age versus input voltage for the common-source circuit.

3.3 Basic Single-TransistorAmplifier Stages

181

point is the small-signal voltage gain at that point. The MOS transistor has much lower voltage gain in the active region than does the bipolar transistor; therefore, the active region for the MOS CS amplifier extends over a much larger range of V ithan in the bipolar common-emitter amplifier. Since the source and body of the MOS transistor both operate at ac ground, vb, = 0 in Fig. 1.36; therefore, the g,b generator is omitted in Fig. 3.12b. As a result, this circuit is topologically identical to the small-signal equivalent circuit for the common-emitter amplifier shown in Fig. 3.10. The CS amplifier is unilateral because it contains no feedback. Therefore, the low-frequency behavior of this circuit can be characterized using the transconductance, input resistance, and output resistance as described in Section 3.2. The transconductance G , is

Equation 3.21 shows that the transconductance of the CS amplifier is equal to the transconductance of the transistor, as in a common-emitter amplifier. Since the input of the CS amplifier is connected to the gate of an MOS transistor, the dc input current and its lowfrequency, small-signal variation ii are both assumed to equal zero. Under this assumption, the input resistance Riis

Another way to see this result is to let Do -+ in (3.13) because MOS transistors behave like bipolar transistors with infinite Do. The output resistance is the Thkvenin-equivalent resistance seen looking into the output with the input shorted, or

The open-circuit, or unloaded, voltage gain is

If the drain load resistor RD is replaced by a current source, RD -. lim a, = -g,r,

RD+m

and a, becomes (3.25)

Equation 3.25 gives the maximum possible voltage gain of a one-stage CS amplifier. This result is identical to the first part of (3.17) for a common-emitter amplifier. In the case of the CS amplifier, however, g, is proportional to from (1.180) whereas r, is inversely proportional to ID from (1.194). Thus, we find in (3.25) that the maximum voltage gain per stage is proportional to 11A.In contrast, the maximum voltage gain in the common-emitter amplifier is independent of current. A plot of the maximum voltage gain versus ID for a typical MOS transistor is shown in Fig. 3.14. At very low currents, the gain approaches a constant value comparable to that of a bipolar transistor. This region is sometimes called subthreshold, where the transistor operates in weak inversion and the square-law characteristic in (1.157) is no longer valid. As explained in Section 1.8, the drain current becomes an exponential function of the gate-source voltage in this region, resembling the collector-current dependence on the base-emitter voltage in a bipolar transistor.

182 Chapter 3


Maximum MOSFET

voltage gain

10' I o4

1o - ~ 10-G

l 0"

to-4

ID(A)

IO-~

Figure 3.14 Typical variation of maximum MOSFET voltage gain with bias current.

Using (1.194), the limiting gain given by (3.25) can also be expressed as lim a, = -g,r,

=

RD+m

gm

IDr, = ID

--

gm

IDvA

--

In the square-law region in Fig. 3.14, substituting (1.181) into (3.26) gives lim a, =

RD +m

-

VA WGS- VtY2

- -2 VA

Vov

where V,, = VGS- Vt is the gate overdrive. Since the gate overdrive is typically an order of magnitude larger than the thermal voltage VT, the magnitude of the maximum gain predicted by (3.27) is usually much smaller than that predicted by (3.17) for the bipolar case. Substituting (1.163) into (3.27) gives lim a, =

-

RD+m

EXAMPLE Find the voltage gain of the common-source amplifier of Fig 3.12a with VDD = 5 V, RD = 5kCI,kt = p,C,, = 10OFA/V2,W = 5 0 p m , L = l p m , V , = 0.8V,Ld = 0 , Xd = 0, and h = 0. Assume that the bias value of Vi is 1 V. To determine whether the transistor operates in the active region, we first find the dc output voltage V. = VDs- If the transistor operates in the active region, (1.157) gives

Then V.

=

VD,

=

VDD- IDRD = 5 V - (0. l mA)(5 k l l ) = 4.5 V

Since Vos = 4.5 V > VGS- Vt = 0.2 V, the transistor does operate in the active region, as assumed. Then from (l.l8O), V,)

=

100

X

1oP6

X

50

-(l 1

-

0.8)

=

PA 1000 -

v


* Then since A

=

0, VA

+

183

Figure 3.15 Typical common-base amplifier.

and (3.24) gives

Note that the open-circuit voltage gain here is much less than in the bipolar example in Section 3.3.1 even though the dc bias currents are equal.

3.3.3 Common-Base Configuration In the common-base (CB) ~ o n f i ~ u r a t i othe n , ~input signal is applied to the emitter of the transistor, and the output is taken from the collector. The base is tied to ac ground. The common-base connection is shown in Fig. 3.15. While the connection is not as widely used as the common-emitter amplifier, it has properties that make it useful in certain circumstances. In this section, we calculate the small-signal properties of the common-base stage. The hybrid-.rr model provides an accurate representation of the small-signal behavior of the transistor independent of the circuit configuration. For the common-base stage, however, the hybrid-T model is somewhat cumbersome because the dependent current source is connected between the input and output terminal^.^ The analysis of common-base stages can be simplified if the model is modified as shown in Fig. 3.16. The small-signal hybrid.rr model is shown in Fig. 3.16a. First note that the dependent current source flows from the collector terminal to the emitter terminal. The circuit behavior is unchanged if we replace this single current source with two current sources of the same value, one going from the collector to the base and the other going from the base to the emitter, as shown in Fig. 3.16b. Since the Currents fed into and removed from the base are equal, the equations that describe the operation of these circuits are identical. We next note that the controlled current source connecting the base and emitter is controlled by the voltage across its own terminals. Therefore, by the application of Ohm's law to this branch, this dependent current source can be replaced by a resistor of value llg,. This resistance appears in parallel with r,, and the parallel combination of the two is called the emitter resistance re.

The new equivalent circuit is called the T model and is shown in Fig. 3 . 1 6 ~ It . has terminal properties exactly equivalent to those of the hybrid-T model but is often more convenient to use for common-base calculations. For dc and low input frequencies, the capacitors C, and C, appear as high-impedance elements and can be neglected. Assume at first that rb = 0 and r, so that the circuit is unilateral. When r , is also neglected, the model reduces to the simple form shown in Fig. 3.16d. Using the T model under these conditions, the small-signal equivalent circuit of the common-base stage is shown in +

184

Chapter 3

W


CP II 0

Collector

Emitter

(4

0

Collector

(b)

Base

d Emitter (C)

Figure 3.16 Generation of emitter-current-controlledT model from the hybrid-T. ( a )Hybrid-.n model. (b) The collector current source g,vl is changed to two current sources in series, and the point between them attached to the base. This change does not affect the current flowing in the base. (c) The current source between base and emitter is converted to a resistor of value llg,. (d) T model for low frequencies, neglecting r,, r,, and the charge-storage elements.

Fig. 3.17. By inspection of Fig. 3.17, the short-circuit transconductance is

The input resistance is just the resistance re:


T

"l

n

f

v

e -

?Fo -

-

185

Figure 3.17 Small-signal equivalent circuit of the common-base stage; r,, r b , and r , are assumed negligible.

The output resistance is given by

Using these parameters, the open-circuit voltage gain and the short-circuit current gain are

Comparing (3.31) and (3.13) shows that the input resistance of the common-base configuration is a factor of (po + 1) less than in the common-emitter configuration. Also, comparing (3.34) and (3.18) shows that the current gain of the common-base configuration is reduced by a factor of (po + 1) compared to that of the common-emitter configuration. Until now, we have assumed that rb is negligible. In practice, however, the base resistance has a significant effect on the transconductance and the input resistance when the common-base stage is operated at sufficiently high current levels. To recalculate these 0, assume the transistor operates in the forward-active region and parameters with Tb consider the small-signal model shown in Fig. 3.18. Here, the transconductance is

To find the relationship between v, and v;, Kirchoff's current law (KCL) and Kirchoff's and around the input voltage law (KVL) can be applied at the internal base node (node loop, respectively. From KCL at node D,

0)

From KVL around the input loop,

Solving (3.37) for vb, substituting into (3.36), and rearranging gives


Similarly, the input resistance in Fig. 3.18 is

186

Chapter 3


Figure 3.18 Small-signal model of the common-base stage with rb > 0.


Thus if the dc collector current is large enough that r, is comparable with rb, then the effects of base resistance must be included. For example, if rb = 100 L(t and p. = 100, then a collector current of 26 mA makes rb and r, equal. The main motivation for using common-base stages is twofold. First, the collectorbase capacitance does not cause high-frequency feedback from output to input as in the common-emitter amplifier. As described in Chapter 7, this change can be important in the design of high-frequency amplifiers. Second, as described in Chapter 4, the common-base amplifier can achieve much larger output resistance than the common-emitter stage in the limiting case where RC -t m. As a result, the common-base configuration can be used as a current source whose current is nearly independent of the voltage across it.

3.3.4 Common-Gate Configuration In the common-gate configuration, the input signal is applied to the source of the transistor, and the output is taken from the drain while the gate is connected to ac ground. This configuration is shown in Fig. 3.19, and its behavior is similar to that of a common-base stage. As in the analysis of common-base amplifiers in Section 3.3.3, the analysis of common-gate amplifiers can be simplified if the model is changed from a hybrid-.rr configuration to a T model, as shown in Fig. 3.20. In Fig. 3.20a, the low-frequency hybrid-.rr model is shown. Note that both transconductance generators are now active. If the substrate or body connection is assumed to operate at ac ground, then vb, = v,, because the gate also operates at ac ground. Therefore, in Fig. 3.20b, the two dependent current sources are combined. In Fig. 3.20c, the combined current source from the source to the drain is replaced by two current sources: one from the source to the gate and the other from the gate to the drain. Since equal currents are pushed into and pulled out of the gate, the equations that describe the operation of the circuits in Figs. 3.206 and 3.20~ are identical. Finally, because the current source from the source to the gate is controlled by the voltage across itself, it can be replaced by a resistor of value l/(g, + gmb),as in Fig. 3.20d. If r, is finite, the circuit of Fig. 3.20d is bilateral because of feedback provided through r,. At first, we will assume that r, m so that the circuit is unilateral. Using the T model under these conditions, the small-signal equivalent circuit of the common-gate stage is shown in Fig. 3.21. By inspection of Fig. 3.21,

-


uTo

+

l87

+

v;

v0

f

Figure 3.19 Common-gate configuration.

ss D

gm+gmb

f

-

-

(d)

(grn+ gmb) vsg

Figure 3.20 Conversion from hybrid-n to T model. (a) Low-frequency hybrid-.rr model. (b) The two dependent sources are combined. ( c )The combined source is converted into two sources. (d) The current source between the source and gate is converted into a resistor.

Using these parameters, the open-circuit voltage gain and the short-circuit current gain are

188 Chapter 3

gsv#-vy i


-

e

L

+

f

a

-

-

Small-signal equivdent circuit of the common-gate stage; r, is assumed negligible. Figure 3.21

3.3.5 Common-Base and Common-Gate Configurations with Finite r, In calculating the expressions for G,, Ri, and R, of the common-base and common-gate amplifiers, we have neglected the effects of r,. Since r , is connected from each amplifier output back to its input, finite r , causes each circuit to be bilateral, making the input resistance depend on the connection at the amplifier output. Let R = RC in Fig. 3.17 or R = RD in Fig. 3.21, depending on which circuit is under consideration. When R becomes large enough that it is comparable with r,, r, must be included in the small-signal model to accurately predict not only the input resistance, but also the output resistance. On the other hand, since the transconductance is calculated with the output shorted, the relationship between r , and R has no effect on this calculation, and the effect of finite r , on transconductance can be ignored if r, >> l/Gm. 3.3.5.1 Common-Base and Common-Gate lnput Resistance

Figure 3 . 2 2 ~shows a small-signal T model of a common-base or common-gate stage including finite r,, where Ri(ideal)is given by (3.31) for a common-base amplifier or by (3.43) for a common-gate amplifier. Also, R represents RC in Fig. 3.17 or RD in Fig. 3.21. Connections to the load and the input source are shown in Fig. 3 . 2 2 to ~ include their contributions to the input and output resistance, respectively. In Fig. 3.22a, the input resistance is Ri = vllii. To find the input resistance, a simplified equivalent circuit such as in Fig. 3.22b is often used. Here, a test voltage source v, is used to drive the amplifier input, and the resulting test current it is calculated. KCL at the output node in Fig. 3.22b gives

KCL at the input in Fig. 3.22b gives

Solving (3.47) for v , and substituting into (3.48) gives


/ common-~aseInput Resistance. For the common-base amplifier, G, = g, from (3.30),

and Ri(ideal)= re

=

a0/gm from (3.31). Substituting (3.30) and (3.31) into (3.50) with

3.3 Basic Single-Transistor Amplifier Stages R;

,------------------

I I

R,

r----l

l

I

I

-1

I I I I

-----,--,-J

Input generator model

Amplifier model

l89

L----4

RL

I I I I I I 1

Load model

(4

(4 Figure 3.22 (a) Model of common-base and common-gate amplifiers with finite r,, showing connections to the input source and load. (b) Equivalent circuit for calculation of R,. (c) Equivalent circuit for calculation of R,.

R

=

RC and rearranging gives

From (3.51), when (Po + l)ro >> RC 11 RL,

From (3.52), when gmro >> ao,

The first term on the right side of (3.53) is the same as in (3.31), where the commonbase amplifier was unilateraI because infinite ro was assumed. The second term shows that the input resistance now depends on the connection to the output (because finite r, provides feedback and makes the amplifier bilateral). The second term is about equal to the resistance at the amplifier output divided by the G,r, product. When r, >> (Rc (1 RL), the effect of,&e second term can be neglected. /

+

Common-Gate Input Resistance. For the common-gate amplifier, G,, = (g, gmb) Ri(ideall = I/(g, + gmb)from (3.43). Substituting (3.42) and (3.43) into

from (3.42) and

190 Chapter 3


(3.50) with R

=

RD and rearranging gives

The first term on the right side of (3.55) is the same as in (3.43), where the common-gate amplifier was unilateral because infinite r, was assumed. The second term is about equal to the resistance at the amplifier output divided by the G,r, product and shows the effect of finite r,, which makes the circuit bilateral. When ro >> ( R D11 RL),the effect of the second term can be neglected. Neglecting the second term usually causes only a small error when RD here or RC in the common-base case is built as a physical resistor even if the amplifier is unloaded ( R L 4 W). However, when RD or RC is replaced by a transistor current source, the effect of the second term can be significant. Chapter 4 describes techniques used to construct transistor current sources that can have very high equivalent resistance. 3.3.5.2 Common-Base and Common-Gate Output Resistance

The output resistance in Fig. 3 . 2 2 ~is R, = vo/io with v, = 0. For this calculation, con~ v, = 0. A test voltage vt is used to sider the equivalent circuit shown in Fig. 3 . 2 2 where drive the amplifier output, and the resulting test current it can be calculated. Since R appears in parallel with the amplifier output, the calculation will be done in two steps. First, the output resistance with R is calculated. Second, this result is placed in parallel with R to give the overall output resistance. From KCL at the input node in Fig. 3.22c, +

With R -. W, KCL at the output node gives

it

=

-G,vl

+ vt -r v1

0

Solving (3.56) for vl and substituting into (3.57) gives


With finite R, the output resistance is


191

Common-Base Output Resistance. For the common-base amplifier, G , = g, from

(3.30) and Ri(ideaU= re and rearranging gives

=

aO/gmfrom (3.3 1). Substituting (3.30) and (3.3 1 ) into (3.60)

The term in brackets on the right side of (3.61) shows that the output resistance of the common-base amplifier depends on the resistance of the input source Rs when r, is finite. For example, if the input comes from an ideal voltage source, Rs = 0 and

R,

=

R 11 ro

(3.62)

On the other hand, if the input comes from an ideal current source, Rs

+

m

and

From (3.61), when Rs > a0 and gmRs

The term in parentheses in (3.65) is about equal to the input source resistance multiplied by the G,,ro product. Therefore, (3.65) and (3.53) together show that the common-base amplifier can be thought of as a resistance scaler, where the resistance is scaled up from the emitter to the collector and down from the collector to the emitter by a factor approximately equal to the Gmr, product in each case. Common-Gate Output Resistance. For the common-gate amplifier, G, = (g,

+

+ gmb)

from (3.42) and Ri(ideall= l / ( g m gmb)from (3.43). Substituting (3.42) and (3.43) into (3.60) and rearranging gives

R. = R 11 [ r , + Rs (l + ( g , From (3.66),when ( g ,

+ g,b)

r,)]

(3.66)

+ gmb)ro >> 1 and (g, + gmb)Rs >> 1,

-

R I/ ((gm + gmb) T O R S )

(3.67)

The term in parentheses in (3.67) is equal to the input source resistance multiplied by the Gmroproduct. Therefore, (3.67) and (3.55) together show that the common-gate amplifier is also a resistance scaler, where the resistance is scaled up from the source to the drain and down from the drain to the source by a factor approximately equal to the G,r, product in each case.

3.3.6 Common-Collector Configuration (Emitter Follower) The common-collector connection is shown in Fig. 3 . 2 3 ~ The . distinguishing feature of this configuration is that the signal is applied to the base and the output is taken from the

192 Chapter 3

m

Single-Transistorand Multiple-TransistorAmplifiers

"cc

l-

Figure 3.23 (a) Common-collector configuration. (b) Small-signal equivalent circuit of the emitter-

follower circuit including RL and Rs.

emitter.4 From a large-signal standpoint, the output voltage is equal to the input voltage minus the base-emitter voltage. Since the base-emitter voltage is a logarithmic function of the collector current, the base-emitter voltage is almost constant even when the collector current varies. If the base-emitter voltage were exactly constant, the output voltage of the common-collector amplifier would be equal to the input voltage minus a constant offset, and the small-signal gain of the circuit would be unity. For this reason, the circuit is also known as an emitter follower because the emitter voltage follows the base voltage. In practice, the base-emitter voltage is not exactly constant if the collector current varies. For example, (1.82) shows that the base-emitter voltage must increase by about 18 mV to double the collector current and by about 60 mV to increase the collector current by a factor of 10at room temperature. Furthermore, even if the collector current were exactly constant, the base-emitter voltage depends to some extent on the collector-emitter voltage if the Early voltage is finite. These effects are most easily studied using small-signal analysis. The appropriate small-signal transistor model is the hybrid-.sr, and the small-signal equivalent circuit is shown in Fig. 3.23b. When the input voltage v, increases, the baseemitter voltage of the transistor increases, which increases the output current i,. However, increasing i, increases the output voltage v,, which decreases the base-emitter voltage by negative feedback. Negative feedback is covered thoroughly in Chapter 8. The key point here is that the common-collector configuration is not unilateral. As a result, the input resistance depends on the load resistor RL and the output resistance depends on the source resistance Rs. Therefore, the characterization of the emitter follower by the corresponding equivalent two-port network is not particularly useful for intuitive understanding. Instead, we will analyze the entire emitter-follower circuit of Fig. 3.23b, including both the source resistance Rs and the load resistor RL. From KCL at the output node, we find


193

from which we find

If the base resistance rb is significant, it can simply be added to Rs in these expressions. The voltage gain is always less than unity and will be close to unity if PO(RL 11 r,) >> (Rs + r,). In most practical circuits, this condition holds. Note that because we have included the source resistance in this calculation, the value of v,lv, is not analogous to a, calculated for the CE and CB stages. When r , >> Rs, PO>> 1, and ro >> RL, (3.69) can be approximated as

We calculate the input resistance R iby removing the input source, driving the input with a test current source it, and calculating the resulting voltage vt across the input terminals. The circuit used to do this calculation is shown in Fig. 3 . 2 4 ~From . KCL at the output node,

Then the voltage vl is

and thus

A general property of emitter followers is that the resistance looking into the base is equal to r, plus (po+ 1) times the incremental resistance connected from the emitter to smallsignal ground. The factor of p. + I in (3.73) stems from the current gain of the commoncollector configuration from the base to the emitter, which increases the voltage drop on the resistance connected from the emitter to small-signal ground and its contribution to the test voltage vt in (3.72). We now calculate the output resistance R, by removing the load resistance RL and finding the Thtvenin-equivalent resistance looking into the output terminals. We can do this by either inserting a test current and calculating the resulting voltage or applying a test voltage and calculating the current. In this case, the calculation is simpler if a test voltage v, is applied as shown in Fig. 3.24b. The voltage v1 is given by

The total output current it is thus

194 Chapter 3


-

+"t

m

4

f

RL

-

(Q)

o+

Figure 3.24 (a) Circuit for calculation of

v0

the input resistance of the emitter follower. (b) Circuit for calculation of the output resistance of the emitter follower. (c) Example emitter follower.

L-

"cc 7

Therefore,

If PO >> 1 and r, >> (llg,)

+ Rsl(Po + l),

Equation 3.77 shows that the resistance at the output is about equal to the resistance in the base lead, divided by (po+ l), plus l/gm.In (3.77), Rs is divided by p. + 1 because the base current flows in Rs, and the base current is PO+ 1 times smaller than the emitter current. Therefore, the emitter follower has high input resistance, low output resistance, and near-unity voltage gain. It is most widely used as an impedance transformer to reduce loading of a preceding signal source by the input impedance of a following stage. It also

195


finds application as a unity-voltage-gain level shift because the dc output voltage is shifted from the dc input voltage by VBE(on).

EXAMPLE Calculate the input resistance, output resistance, and voltage gain of the emitter follower of Fig. 3.24~.Assume that Do = 100, rb = 0, r , m, and Ic = 100 FA. +

3.3.7 Common-Drain Configuration (Source Follower)

The common-drain configuration is shown in Fig. 3 . 2 5 ~The . input signal is appIied to the gate and the output is taken from the source. From a large-signal standpoint, the output voltage is equal to the input voltage minus the gate-source voltage. The gate-source voltage consists of two parts: the threshold and the overdrive. If both parts are constant, the resulting output voltage is simply offset from the input, and the small-signal gain would be unity. Therefore, the source follows the gate, and the circuit is also known as a source follower. In practice, the body effect changes the threshold voltage, and the overdrive depends on the drain current, which changes as the output voltage changes unless RL a. Furthermore, even if the current were exactly constant, the overdrive depends to some extent on the drain-source voltage unless the Early voltage is infinite. We will use smallsignal analysis to study these effects. The small-signal equivalent circuit is shown in Fig. 3.25b. Since the body terminal is not shown in Fig. 3.25a, we assume that the body is connected to the lowest supply voltage (ground here) to keep the source-body p n junction reverse biased. As a result, vb, changes when the output changes because the source is connected to the output, and the gmb generator is active in general. From KVL around the input loop, -+

With the output open circuited, io

=

0, and KCL at the output node gives

Solving (3.78) for vgs, substituting into (3.79), and rearranging gives

If RL

+

03,

(3.80) simplifies to

196 Chapter 3


Figure 3.25 (a) Common-drain configuration. (b)

Small-signal equivalent circuit of the commondrain configuration.

Equation 3.81 gives the open-circuit voltage gain of the source follower with the load resistor replaced by an ideal current source. If r, is finite, this gain is less than unity even if the body effect is eliminated by connecting the source to the body to deactivate the g,b generator. In this case, variation in the output voltage changes the drain-source voltage and the current through r,. From a large-signal standpoint, solving (1.165) for VGS- Vt shows that the overdrive also depends on the drain-source voltage unless the channellength modulation parameter h is zero. This dependence causes the small-signal gain to be less than unity. A significant difference between bipolar and MOS followers is apparent from (3.80). If RL + and r, + m,

Equation 3.82 shows that the source-follower gain is less than unity under these conditions and that the gain depends on X = gmb/gm,which is typically in the range of 0.1 to 0.3. In contrast, the gain of an emitter follower would be unity under these conditions. As a result, the source-follower gain is not as well specified as that of an emitter follower when body effect is a factor. Furthermore, (1.200) shows that X depends on the source-body voltage which is equal to V, when the body is connected to ground. Therefore, the gain calculated in (3.82) depends on the output voltage, causing distortion to arise for large-signal changes in the output as shown in Section 5.3.2. To overcome these limitations in practice, the type of source follower (n-channel or p-channel) can be chosen so that it can be fabricated in an isolated well. Then the well can be connected to the source of the transistor, setting Vss = 0 and v,b = 0. Unfortunately, the parasitic capacitance from the well to the substrate increases the capacitance attached to the source with this connection, reducing the bandwidth of the source follower. The frequency response of source followers is covered in Chapter 7.


197

The output resistance of the source follower can be calculated from Fig. 3.25b by setting vi = 0 and driving the output with a voltage source v,. Then v,, = -v, and io is


Equation 3.84 shows that the body effect reduces the output resistance, which is desirable because the source follower produces a voltage output. This beneficial effect stems from the nonzero small-signal current conducted by the gmbgenerator in Fig. 3.25b7which increases the output current for a given change in the output voltage. As r, + and RL -+ CO, this output resistance approaches l/(g, + gmb).The common-gate input resistance given in (3.54) approaches the same limiting value. As with emitter followers, source followers are used as voltage buffers and level shifters. When used as a level shifter, they are more flexible than emitter followers because the dc value of VGS can be altered by changing the W / L ratio. 3.3.8 Common-Emitter Amplifier with Emitter Degeneration In the common-emitter amplifier considered earlier, the signal is applied to the base, the output is taken from the collector, and the emitter is attached to ac ground. In practice, however, the common-emitter circuit is often used with a nonzero resistance in series with the emitter as shown in Fig. 3 . 2 6 ~ The . resistance has several effects, including reducing the transconductance, increasing the output resistance, and increasing the input resistance. These changes stem from negative feedback introduced by the emitter resistor R E . When V iincreases, the base-emitter voltage increases, which increases the collector current. As a result, the voltage dropped across the emitter resistor increases, reducing the base-emitter voltage compared to the case where RE = 0. Therefore, the presence of nonzero RE reduces the base-emitter voltage through a negative-feedback process termed emitter degeneration. This circuit is examined from a feedback standpoint in Chapter 8. In this section, we calculate the input resistance, output resistance, and transconductance of the emitter-degenerated, common-emitter amplifier. To find the input resistance and transconductance, consider the small-signal equivalent circuit shown in Fig. 3.26b, and focus on vi, ib, and i,. From KCL at the emitter,

From KCL at the collector,

From KVL around the input loop,

l98

Chapter 3


v.

-

Figure 3.26 (a)Common-emitter amplifier with emitter degeneration. (b) Small-signal equivalent circuit for emitter-degenerated, common-emitter amplifier. ( c ) Circuit for calculation of output resistance. (6)Small-signal, two-port equivalent of emitter-degenerated CE amplifier.


199

Solving (3.85) for i,, substituting into (3.86) and rearranging gives

Substituting (3.88) into (3.87) and rearranging gives

If r, >> RC and r, >> RE, the last term in parentheses in (3.89) is approximately equal to unity and (3.90) Ri = r, + (Po + 1) RE Because the last term in parentheses in (3.89) is less than one, comparing (3.89) and (3.90) shows that finite r, reduces the input resistance of the common-emitter amplifier with emitter degeneration. This reduction stems from nonzero current that flows in r, when r, is finite. If vi increases, v, follows vi because the base-emitter voltage is approximately constant, but the collector voltage (-i,Rc) decreases by an amount determined by the small-signal gain from the base to the collector. Therefore, the current that flows in r, from the emitter to the collector increases, increasing the base current and reducing the input resistance. In practice, (3.90) is usually used to calculate the input resistance. The error in the approximation is usually small unless the resistances represented by RC or RE are large, such as when implemented with transistors in active-load configurations. Active loads are considered in Chapter 4. Now we will calculate the transconductance of the stage. First, set RC = 0 in Fig. 3.266 because G m = i0hi with the output shorted. Substituting (3.87) into (3.85) with RC = 0 and rearranging gives

Substituting (3.87) and (3.91) into (3.86) with RC

=

0 and rearranging gives

In most practical cases, p. >> 1, r , >> R E , and gmr, >> 1. Then

Equation 3.93 is usually used to calculate the transconductance of a common-emitter amplifier with emitter degeneration. The output resistance is calculated using the equivalent circuit of Fig. 3 . 2 6 ~For . the time being, assume that RC is very large and can be neglected. The test current if flows in

200

Chapter 3


the parallel combination of r, and RE, SO that

The current through r, is

In this equation, the first term is much smaller than the second. If the first term is neglected, we obtain,

If g, RE > PO,(3.98) shows that

The output resistance is finite even when RE r , when p. is finite.

+

because nonzero test current flows in

3.3.9 Common-SourceAmplifier with Source Degeneration Source degeneration in MOS transistor amplifiers is not as widely used as emitter degeneration in bipolar circuits for at least two reasons. First, the transconductance of MOS transistors is normally much lower than that of bipolar transistors so that further reduction in transconductance is usually undesirable. Second, although degeneration increases the input resistance in the bipolar case, Ri + even without degeneration in the MOS case. However, examining the effects of source degeneration is important in part because it is widely used to increase the output resistance of MOS current sources. Also, because smallgeometry MOS transistors can be modeled as ideal square-law devices with added source resistors as shown in Section 1.7.1, we will consider the effects of source degeneration below. A common-source amplifier with source degeneration is shown in Fig. 3.27. Its smallsignal equivalent circuit is shown in Fig. 3.28. Because the input is connected to the gate of the MOS transistor, Ri + a.To calculate the transconductance, set RD = 0 because G, = i,lvi with the output shorted. Also, since a connection to the body is not shown in


201

vi

1

-

+

Figure 3.27 Common-source amplifier with source degeneration.

+

+

RD

"P Vi

@

n

-

+

VU

-

Figure 3.28 Small-signal equivalent of the sourcedegenerated, commonsource amplifier.

-

Fig. 3.27, we assume that the body is connected to the lowest power-supply voltage, which is ground. Therefore, the dc body voltage is constant and v b = 0. From KCL at the source with RD = 0,

From KCL at the drain with RD

=

0,

Solving (3.101) for v,, substituting into (3.102), and rearranging gives

For large Rs, (3.104) shows that the value of G,, approaches 1/[(1 + X ) Rs]. Even in this limiting case, the transconductance of the common-source amplifier with degeneration is dependent on an active-device parameter X . Since X is typically in the range of 0.1 to 0.3, the body effect causes the transconductance in this case to deviate from lIRs by about 10 to 20 percent. In contrast, (3.92) indicates that the value of G, for a commonemitter amplifier with degeneration approaches Pol[(Pn 1) RE]for large RE, assuming that r, >> RE and g,r, >> 1. If PO > 100, the transconductance of this bipolar amplifier is within l percent of l / R E .Therefore, the transconductance of a common-source amplifier with degeneration is usually much more dependent on active-device parameters than in its bipolar counterpart.

+

202

Chapter 3


Figure 3.29 Circuit for calculation of output resistance.

The output resistance of the circuit can be calculated from the equivalent circuit of Fig. 3.29, where RD is neglected. Since the entire test current flows in Rs, v,

=

i,Rs

(3.105)

Then

vt

= V,

+ ilro = V, + r,

[it - g m (0 - vs) - gmb (0 - V,)]

(3.106)


This equation shows that as Rs is made arbitrarily large, the value of R, continues to increase. In contrast, (3.100) shows that R, in the common-emitter amplifier with degeneration approaches a maximum value of about (po 1) r, as RE -+ m.

+

3.4 Multiple-Transistor Amplifier Stages Most integrated-circuit amplifiers consist of a number of stages, each of which provides voltage gain, current gain, andlor impedance-level transformation from input to output. Such circuits can be analyzed by considering each transistor to be a stage and analyzing the circuit as a collection of individual transistors. However, certain combinations of transistors occur so frequently that these combinations are usually characterized as subcircuits and regarded as a single stage. The usefulness of these topologies varies considerably with the technology being used. For example, the Darlington two-transistor connection is widely used in bipolar integrated circuits to improve the effective current gain and input resistance of a single bipolar transistor. Since the current gain and input resistance are infinite with MOS transistors however, this connection finds little use in pure MOS integrated circuits. On the other hand, the cascode connection achieves a very high output resistance and is useful in both bipolar and MOS technologies.

3.4.1 The CC-CE, CC-CC and Darlington Configurations The common-collector -common-emitter (CC-CE), common-collector-common-collector (CC-CC), and ~ a r l i n g t o nconfigurations ~ are all closely related. They incorporate an additional transistor to boost the current gain and input resistance of the basic bipolar transistor. The common-collector-common-emitter configuration is shown in Fig. 3.30~. The biasing current source IBIAs is present to establish the quiescent dc operating current this current source may be absent in some cases or in the emitter-follower transistor Ql; may be replaced by a resistor. The common-collector-common-collector configuration is

3.4 Multiple-Transistor Amplifier Stages

-

203

"cc

0

Q2 0

Out

Figure 3.30 (a) Common-collector-common-emitter cascade. (b) Common-collector-commoncollector cascade.

illustrated in Fig. 3.30b. In both of these configurations, the effect of transistor Ql is to increase the current gain through the stage and to increase the input resistance. For the purpose of the low-frequency, small-signal analysis of circuits, the two transistors Ql and Q2 can be thought of as a single composite transistor, as illustrated in Fig. 3.3 1. The smallsignal equivalent circuit for this composite device is shown in Fig. 3.32, assuming that the effects of the r, of Ql are negligible. We will now calculate effective values for the r,, g,, PO,and r, of the composite device, and we will designate these composite parameters with a superscript c. We will also denote the terminal voltages and currents of the composite device with a superscript c. We assume that p. is constant. The effective value of r,, r;, is the resistance seen looking into the composite base BC with the composite emitter ECgrounded. Referring to Fig. 3.32, we see that the resistance looking into the base of Q2 with ECgrounded is simply r,2. Thus (3.73) for the input resistance of the emitter follower can be used. Substituting r,2 for RL and allowing "cc

-r

C"

B C0 Q2

Figure 3.3 1 The composite tran-

--

0

EC

sistor representation of the CCCE and CC-CC connections.

Figure 3.32 Small-signal equivalent circuit for the CC-CE and CC-CC connected transistors.

204 Chapter 3


The effective transconductance of the configuration g; is the change in the collector current of Q2, i,", for a unit change in v$, with C Cand E" grounded. To calculate this transconductance, we first find the change in v2 that occurs for a unit change in v;,. Equation 3.69 can be used directly, giving

Also

Thus

is zero, the emitter For the special case in which the biasing current source IBIAs current of Ql is equal to the base current of Q2. Thus the ratio of r , ~to r,2 is (Po + l), and (3.111) reduces to L

The effective current gain PCis the ratio 'C

pc=fr= i;

The emitter current of Ql is given by iel Since iel

=

=

(P0 +

ib2, ic2 = i:

=

POib2=

PO(PO+ 1) ibl

=

PO(PO+ 1) :i

(3.115)

Therefore,

Pc = PO(PO+ 1)

(3.116)

Equation 3.116 shows that the current gain of the composite transistor is approximately equal to p i . Also, by inspection of Fig. 3.32, assuming r, is negligible, we have r: = r02

(3.117)

The small-signal, two-port network equivalent for the CC-CE connection is shown in Fig. 3.33, where the collector resistor RC has not been included. This small-signal equivalent can be used to represent the small-signal operation of the composite device, simplifying the analysis of circuits containing this structure.

3.4 Multiple-TransistorAmplifier Stages

205

Figure 3.33 Two-port representation,

CC-CE connection.

The Darlington configuration, illustrated in Fig. 3.34, is a composite two-transistor device in which the collectors are tied together and the emitter of the first device drives the base of the second. A biasing element of some sort is used to control the emitter current of Q l . The result is a three-terminal composite transistor that can be used in place of a single transistor in common-emitter, common-base, and common-collector configurations. When used as an emitter follower, the device is identical to the CC-CC connection already described. When used as a common-emitter amplifier, the device is very similar to the CC-CE connection, except that the collector of Ql is connected to the output instead of to the power supply. One effect of this change is to reduce the effective output resistance of the device because of feedback through the r, of Ql. Also, this change increases the input capacitance because of the connection of the collector-base capacitance of Ql from the input to the output. Because of these drawbacks, the CC-CE connection is normally preferable in integrated small-signal amplifiers. The term Darlington is often used to refer to both the CC-CE and CC-CC connections. As mentioned previously, Darlington-type connections are used to boost the effective current gain of bipolar transistors and have no significant application in pure-MOS circuits. In BiCMOS technologies, however, a potentially useful connection is shown in Fig. 3.35, where an MOS transistor is used for Ql. This configuration not only realizes the infinite input resistance and current gain of the MOS transistor, but also the large transconductance of the bipolar transistor. m

EXAMPLE Find the effective r;, PC,and gF, for the composite transistor shown in Fig. 3.3 1. For both devices, assume that PO= 100, r b = 0, and r, -+ m. For Q2, assume that Ic = 100 pA and that IBrAs = 10 pA.

A

Figure 3.34 The Darlington configuration.

206

Chapter 3


Figure 3.35 Compound Darlington connection available in BiCMOS technology.

The base current of Q2 is 100 pA1100 11 pA. Then

rn

=

1 FA. Thus the emitter current of Ql is

Thus the composite transistor has much higher input resistance and current gain than a single transistor. 3.4.2 The Cascode Configuration

The cascode configuration was first invented for vacuum-tube circuit^.^.^ With vacuum tubes, the terminal that emits electrons is the cathode, the terminal that controls current flow is the grid, and the terminal that collects electrons is the anode. The cascode is a cascade of common-cathode and common-grid stages joined at the anode of the first stage and the cathode of the second stage. The cascode configuration is important mostly because it increases output resistance and reduces unwanted capacitive feedback in amplifiers, allowing operation at higher frequencies than would otherwise be possible. The high output resistance attainable is particularly useful in desensitizing bias references from variations in power-supply voltage and in achieving large amounts of voltage gain. These applications are described further in Chapter 4. The topic of frequency response is covered in Chapter 7. Here, we will focus on the low-frequency, small-signal properties of the cascode configuration. 3.4.2.1 The Bipolar Cascode

In bipolar form, the cascode is a common-emitter-common-base (CE-CB) amplifier, as shown in Fig. 3.36. We will assume here that rb in both devices is zero. Although the base resistances have a negligible effect on the low-frequency performance, the effects of nonzero r b are important in the high-frequency performance of this combination. These effects are considered in Chapter 7.


207

Q2

-

+C

v;

-4,

"BIAS

Figure 3.36 The cascode amplifier using bipolar transistors.

-

The small-signal equivalent for the bipolar cascode circuit is shown in Fig. 3.37. Since we are considering the low-frequency performance, we neglect the capacitances in the model of each transistor. We will determine the input resistance, output resistance, and transconductance of the cascode circuit. By inspection of Fig. 3.37, the input resistance is simply

Ri = r,l

(3.118)

Since the current gain from the emitter to the collector of Q2 is nearly unity, the transconductance of the circuit from input to output is Gm

(3.119)

gm1

X

The output resistance can be calculated by shorting the input vi to ground and applying a test signal at the output. Then v1 = 0 in Fig. 3.37 and the g,lvl generator is inactive. The circuit is then identical to that of Fig. 3 . 2 6 ~for a bipolar transistor with emitter degeneration. Therefore, using (3.98) with RE = rol shows that the output resistance is

Therefore, the CE-CB connection displays an output resistance that is larger by a factor of about POthan the CE stage alone. If this circuit is operated with a hypothetical collector load that has infinite incremental resistance, the voltage gain is

'0

2

+

-

+0 ro l

-

Figure 3.37 Small-signal equivalent circuit for the bipolar-transistor cascode connection.

208

Chapter 3 m Single-Transistor and Multiple-Transistor Amplifiers

Thus the magnitude of the maximum available voltage gain is higher by a factor p. than for the case of a single transistor. For a typical npn transistor, the ratio of P o l q is approximately 2 X 105. In this analysis, we have neglected r,. As described in Chapter 1, the value of r,, for integrated-circuit npn transistors is usually much larger than Pore, and then r, has little effect on R,. For lateral pnp transistors, however, r, is comparable with Par, and decreases R, somewhat. 3.4.2.2 The MOS Cascode

In MOS form, the cascode is a common-source-common-gate (CS-CG) amplifier, as shown in Fig. 3.38. The small-signal equivalent circuit is shown in Fig. 3.39. Since the input is connected to the gate of M1, the input resistance is

To find the transconductance, set R i,. From KCL at the output,

=

0 to short the output and calculate the current

From KCL at the source of M2,

and rearranging gives Solving (3.125) for vdsl, substituting into (3.1 N),

-

-

- VDD Figure 3.38 Cascode amplifier using

MOSFETs.

2

'-0

+0--

+

"i

-

--

-

A

Figure 3.39 Small-signal equivalent circuit for the MOS-transistor cascode connection.


209

Equation 3.126 shows that the transconductance of the simple cascode is less than g,~. If (gm2+ gmb2)rol >> 1, however, the difference is small, and the main point here is that the cascode configuration has little effect on the transconductance. This result stems from the observation that Ri2,the resistance looking in the source of M2, is much less than rol. From (3.54) and (3.55) with R = RD 11 RL,

In finding the transconductance, we set R = 0 so that v, = 0. Then Ri2 = l/(g, + gmb), and most of the g,lvi current flows in the source of M2 because Ri2 0, the factor ( a + 1) in (3.131) amplifies the gate-source voltage of M2 compared to the case of a simple cascode. This amplification is central to the characteristics of the active-cascode circuit. Since the smallsignal diagrams of the simple and active-cascode circuits are identical except for the value of vgs2,and since vgs2 is only used to control the current flowing in the g,;! generator, the active-cascode circuit can be analyzed using the equations for the simple cascode with g,z replaced by ( a 1 ) gm2.In other words, the active cascode behaves as if it were a simple cascode with an enhanced value of g,2. To find the transconductance of the active cascode, g,:! (a+ 1) replaces g,2 in (3.126), giving

+

-

Again, Gm g,l under most conditions; therefore, the active-cascode structure is generally not used to modify the transconductance. The active cascode reduces Ri2, the resistance looking into the source of M2, compared to the simple cascode, which reduces the vdsl/v, ratio given in (3.130) and increases the output resistance. Substituting (3.130) into (3.129) with g,2 ( a + 1 ) replacing gm2 gives


213

This result can also be derived by substituting g,2 (a + 1) for g,2 in (3.128). Equation 3.133 shows that the active-cascode configuration increases the output resistance by a factor of about [ g , ( a + 1) + gmb] r, compared to a common-source amplifier. A key limitation of the active-cascode circuit is that the output impedance is increased only at frequencies where the amplifier that drives the gate of M2 provides some gain. In practice, the gain of this amplifier falls with increasing frequency, reducing the potential benefits of the active-cascode circuits in high-frequency applications. A potential problem with the active-cascode configuration is that the negative feedback loop through M2 may not be stable in all cases.

3.4.4 The Super Source Follower Equation 3.84 shows that the output resistance of a source follower is approximately l/(g, + gmb). Because MOS transistors usually have much lower transconductance than their bipolar counterparts, this output resistance may be too high for some applications, especially when a resistive load must be driven. One way to reduce the output resistance is to increase the transconductance by increasing the WIL ratio of the source follower and its dc bias current. However, this approach requires a proportionate increase in the area and power dissipation to reduce R,. To minimize the area and power dissipation required to reach a given output resistance, the super source follower configuration shown in Fig. 3.43 is sometimes used. This circuit uses negative feedback through M 2 to reduce the output resistance. Negative feedback is studied quantitatively in Chapter 8. From a qualitative standpoint, when the input voltage is constant and the output voltage increases, the magnitude of the drain current of M1 also increases, in turn increasing the gate-source voltage of M2. As a result, the drain current of M 2 increases, reducing the output resistance by increasing the total current that flows into the output node under these conditions. From a dc standpoint, the bias current in M 2 is the difference between I I and 12; therefore, I I > Z2 is required for proper operation. This information can be used to find the small-signal parameters of both transistors. The small-signal equivalent circuit is shown in Fig. 3.44. The body-effect transconductance generator for M 2 is inactive because vbs2 = 0. Also, the polarities of the voltage-controlled current sources for n- and p-channel devices are identical. Finally, the output resistances of current sources I I and I2 are represented by rl and r2, respectively. If the current sources are ideal, rl -+ and 7-2 + m. In practice, these resistances are large but finite. Techniques to build high-resistance current sources are considered in Chapter 4. To find the output resistance, set vi = 0 and calculate the current i, that flows in the output node when the output is driven by a voltage v,. From KCL at the output under these

1

y2 1

1-

Figure 3.43 Super-source-follower configuration.

214 Chapter 3 m Single-Transistor and Multiple-TransistorAmplifiers

Figure 3.44 Small-signal equivalent circuit of the super-source follower.

conditions,

From KCL at the drain of M 1 with vi

=

0,

Solving (3.135) for v2, substituting into (3.l34), and rearranging gives

Assume Il and I2 are ideal current sources so that rl if (gm1 + gmbl) rol >> 1,

R,

-

-+

and 7-2

+

a.If

iL !

1 gm1 +gmbl grn2rol

r02

+

m,

and

(3.137)

Comparing (3.84) and (3.137) shows that the negative feedback through M2 reduces the output resistance by a factor of about gm2rol. Now we will calculate the open-circuit voltage gain of the super-source follower. With the output open circuited, KCL at the output node gives

From KCL at the drain of M 1 ,

Solving (3.138) for vz, substituting into (3.139),and rearranging gives

With ideal current sources,

3.5 Differential Pairs 215

Comparing (3.141) and (3.81) shows that the deviation of this gain from unity is greater than with a simple source follower. If gm2r02>> l , however, the difference is small and the main conclusion is that the super-source-follower configuration has little effect on the open-circuit voltage gain. As mentioned earlier, the super-source follower is sometimes used in MOS technologies to reduce the source-follower output resistance. It is also used in bipolar technologies in output stages to reduce the current conducted in a weak lateral pnp transistor. This application is described in Chapter 5. The main potential problem with the super-sourcefollower configuration is that the negative feedback loop through M2 may not be stable in all cases, especially when driving a capacitive load. The stability of feedback amplifiers is considered in Chapter 9.

3.5 Differential Pairs The differential pair is another example of a circuit that was first invented for use with vacuum tubes.'' The original circuit uses two vacuum tubes whose cathodes are connected together. Modern differential pairs use bipolar or MOS transistors coupled at their emitters or sources, respectively, and are perhaps the most widely used two-transistor subcircuits in monolithic analog circuits. The usefulness of the differential pair stems from two key properties. First, cascades of differential pairs can be directly connected to one another without interstage coupling capacitors. Second, the differential pair is primarily sensitive to the difference between two input voltages, allowing a high degree of rejection of signals common to both inputs."1l2 In this section, we consider the properties of emitter-coupled pairs of bipolar transistors and source-coupled pairs of MOS transistors in detail.

3.5.1 The dc Transfer Characteristic of an Emitter-Coupled Pair The simplest form of an emitter-coupled pair is shown in Fig. 3.45. The biasing circuit in the lead connecte,d to the emitters of Ql and Q2 can be a transistor current source, which is called a tail current source, or a simple resistor. If a simple resistor RTAL is used alone, ITAIL = 0 in Fig. 3.45. Otherwise, ITAIL and RTAIL together form a Norton-equivalent model of the tail current source.

Figure 3.45 Emitter-coupled pair circuit diagram.

216 Chapter 3 B Single-Transistor and Multiple-Transistor Amplifiers The large-signal behavior of the emitter-coupled pair is important in part because it illustrates the limited range of input voltages over which the circuit behaves almost linearly. Also, the large-signal behavior shows that the amplitude of analog signals in bipolar circuits can be limited without pushing the transistors into saturation, where the response time would be increased because of excess charge storage in the base region. For simplicity in the analysis, we assume that the output resistance of the tail current source RTArL W, that the output resistance of each transistor r, a,and that the base resistance of each transistor rb = 0. These assumptions do not strongly affect the low-frequency, large-signal behavior of the circuit. From KVL around the input loop, +

+

Assume the collector resistors are small enough that the transistors do not operate in saturation if Vil 5 Vcc and Viz 5 Vcc. If Vbel >> VT and Vbe2 >> VT, the Ebers-Moll equations show that

Assume the transistors are identical so that Isl = IS2. Then combining (3.142), (3.143), and (3. l44), we find I cl 1~2 =

where Vid a ~ = 2 aF.

exp

(

Vil

vT

Vi2

)

=

exp

(g)

Vil - Vi2. Since we have assumed that the transistors are identical, a Then KCL at the emitters of the transistors shows

=

~ = 1

Combining (3.145) and (3.146), we find that

These two currents are shown as a function of Vid in Fig. 3.46. When the magnitude of Vid is greater than about 3VT, which is approximately 78 mV at room temperature, the collector currents are almost independent of Vid because one of the transistors turns off and the other conducts all the current that flows. Furthermore, the circuit behaves in an approximately linear fashion only when the magnitude of Vid is less than about VT. We can now compute the output voltages as V01 V02

= =

Vcc Vcc

(3.149) (3.150)

ICI RC - Ic2Rc -

The output signal of interest is often the difference between V,, and Vo2,which we define as Vod. Then

(2)

VOd = Vol - Vo2 = ( Y F I ~tanh ~ ~ ~ R ~

3.5 Differential Pairs

217

ITAIL

- 4 v T - 3 v T - 2 v T -V,

0 Vrd

V,

Figure 3.46 Emitter-coupled pair collector currents as a function of differential input voltage.

2 v T 3 v , 4VT

@TAIL&

I

I

I

l

I

I

-

Vid

-------W-------------------------

-~F~TAILRC

Figure 3.47 Emitter-coupled pair, differential output voltage as a function of differential input voltage.

This function is plotted in Fig. 3.47. Here a significant advantage of differential amplifiers is apparent: When Vld is zero, VOd is zero if Ql and Q2 are identical and if identical resistors are connectedto the colldctors of Ql and Qz. This property allows direct coupling of cascaded stages without offsets. 3.5.2 The dc Transfer Characteristic with Emitter Degeneration

To increase the range of Vid over which the emitter-coupled pair behaves approximately as a linear amplifier, emitter-degeneration resistors are frequently included in series with the emitters of the transistors, as shown in Fig. 3.48. The analysis of this circuit proceeds in the same manner as without degeneration, except that the voltage drop across these resistors must be included in the KVL equation corresponding to (3.142). A transcendental equation results from this analysis and a closed-form solution like that of (3.151) does not exist, but the effect of the resistors may be understood intuitively from the examples plotted in Fig. 3.49. For large values of emitter-degeneration resistors, the linear range of operation is extended by an amount approximately equal to ITAILRE. This result stems from the observation that all of ITAILflows in one of the degeneration resistors when one transistor turns off. Therefore, the voltage drop is ITAILREon one resistor and zero on the other, and the value of Vid required to turn one transistor off is changed by the difference of the voltage drops on these resistors. Furthermore, since the voltage gain is the slope of

2 18

Chapter 3 m Single-Transistor and Multiple-TransistorAmplifiers

Figure 3.48 Circuit diagram of emitter-coupled pair with emitter degeneration.

"id

Figure 3.49 Output voltage as a function of input voltage, emitter-coupled pair with emitter degeneration.

the transfer characteristic, the voltage gain is reduced by approximately the same factor that the input range is increased. In operation, the emitter resistors introduce local negative feedback in the differential pair. This topic is considered in Chapter 8.

3.5.3 The dc Transfer Characteristic of a Source-Coupled Pair Consider the n-channel MOS-transistor source-coupled pair shown in Fig. 3.50. The following analysis applies equally well to a corresponding p-channel source-coupled pair with appropriate sign changes. In monolithic form, a transistor current source, called a tail current source, is usually connected to the sources of M 1 and M 2 . In that case, ITAILand RTAILtogether form a Norton-equivalent model of the tail current source. For this large-signal analysis, we assume that the output resistance of the tail current source is RTAIL+ m. Also, we assume that the output resistance of each transistor r, a.Although these assumptions do not strongly affect the low-frequency, large-signal behavior of the circuit, they could have a significant impact on the small-signal behavior. Therefore, we will reconsider these assumptions when we analyze the circuit from a small+


219

Figure 3.50 n-channel MOSFET source-coupled pair.

signal standpoint. From KVL around the input loop,

We assume that the drain resistors are small enough that neither transistor operates in the triode region if Vil 5 VDDand Vi2 5 VDD. Furthermore, we assume that the drain current of each transistor is related to its gate-source voltage by the approximate squarelaw relationship given in (1.157). If the transistors are identical, applying (1.157) to each transistor and rearranging gives (3.153) and

Substituting (3.153) and (3.154) into (3.152) and rearranging gives

From KCL at the source of M 1 and M2, Id1

Solving (3.156) for formula gives

Id2,

+ Id2

=

(3.156)

ITAIL

substituting into (3.155), rearranging, and using the quadratic

Id, = ITAIL -+

I IT AIL k' (WIL)

-

v;

220


Chapter 3

Since Idl > ITAIL/2when Vid > 0, the potential solution where the second term is subtracted from the first in (3.157) cannot occur in practice. Therefore,


Equations 3.158 and 3.159 are valid when both transistors operate in the active or saturation region. Since we have assumed that neither transistor operates in the triode region, the limitation here stems from turning off one of the transistors. When M 1 turns off, I d l = 0 and Id2 = ITAL. On the other hand, Idl = ITAIL and Id2 = 0 when M2 turns off. Substituting these values in (3.155) shows that both transistors operate in the active region if

Since Idl

=

Id2

when Vid = 0, the range in (3.160) can be rewritten as

=

Equation 3.161 shows that the range of Vid for which both transistors operate in the active region is proportional to the overdrive calculated when Vid = 0. This result is illustrated in Fig. 3.5 1. The overdrive is an important quantity in MOS circuit design, affecting not only the input range of differential pairs, but also other characteristics including the speed, offset, and output swing of MOS amplifiers. Since the overdrive of an MOS transistor depends on its current and WIL ratio, the range of a source-coupled pair can be adjusted to suit a given application by adjusting the value of the tail current andor the

v v,,,= 0.2 v

V", = 0.1

v,,

= 0.2

v

V,, = 0.4 V

Figure 3.51 dc transfer characteristic of the MOS source-coupled pair. The parameter is the over-

drive V,, = VGS- V, determined when

Vid =

0.


221

aspect ratio of the input devices. In contrast, the input range of the bipolar emitter-coupled pair is about ? 3 V T ,independent of bias current or device size. In fact, the source-coupled pair behaves somewhat like an emitter-coupled pair with emitter-degeneration resistors that can be selected to give a desired input voltage range. In many practical cases, the key output of the differential pair is not Idlor Id2alone but the difference between these quantities. Subtracting (3.159) from (3.158) gives

We can now compute the differential output voltage as Vod = Vol - Vo2 = VDD- IdlRD - VDD+ Id2RD = -(AId) RD (3.163) Since AId = 0 when Vid = 0, (3.163) shows that VOd = 0 when Vid = 0 if M1 and M2 are identical and if identical resistors are connected to the drains of M1 and M2. This property allows direct coupling of cascaded MOS differential pairs, as in the bipolar case. 3.5.4 Introduction to the Small-Signal Analysis of Differential Amplifiers

The features of interest in the performance of differential pairs are often the small-signal properties for dc differential input voltages near zero volts. In the next two sections, we assume that the dc differential input voltage is zero and calculate the small-signal parameters. If the parameters are constant, the small-signal model predicts that the circuit operation is linear. The results of the small-signal analysis are valid for signals that are small enough to cause insignificant nonlinearity. In previous sections, we have considered amplifiers with two input terminals (Vi and ground) and two output terminals (V, and ground). Small-signal analysis of such circuits leads to one equation for each circuit, such as Here, A is the small-signal voltage gain under given loading conditions. In contrast, differential pairs have three input terminals (Vil, Vi2, and ground) and three output terminals (Vo1,Vo2,and ground). Therefore, direct small-signal analysis of differential pairs leads to two equations for each circuit (one for each output), where each output depends on each input: (3.165) v01 = Allvil + A12~i2 (3.166) V 0 2 = A ~ l ~+i A22vi2 l Here, four voltage gains, All, AI2, A21, and A22, specify the small-signal operation of the circuit under given loading conditions. These gains can be interpreted as

222

Chapter 3 W Single-Transistor and Multiple-Transistor Amplifiers

Although direct small-signal analysis of differential pairs can be used to calculate these four gain values in a straightforward way, the results are difficult to interpret because differential pairs usually are not used to react to vil or viz alone. Instead, differential pairs are used most often to sense the difference between the two inputs while trying to ignore the part of the two inputs that is common to each. Desired signals will be forced to appear as differences in differential circuits. In practice, undesired signals will also appear. For example, mixed-signal integrated circuits use both analog and digital signal processing, and the analog signals are vulnerable to corruption from noise generated by the digital circuits and transmitted through the common substrate. The hope in using differential circuits is that undesired signals will appear equally on both inputs and be rejected. To highlight this behavior, we will define new differential and common-mode variables at the input and output as follows. The differential input, to which differential pairs are sensitive, is

The common-mode or average input, to which differential pairs are insensitive, is

These equations can be inverted to give vil and vi2 in terms of

vid

and vie:

The physical significance of these new variables can be understood by using (3.173) and (3.174) to redraw the input connections to a differential amplifier as shown in Fig. 3.52. The common-mode input is the input component that appears equally in vil and viz. The differential input is the input component that appears between vil and viz. New output variables are defined in the same way. The differential output is

The common-mode or average output is

LP-'

Figure 3.52 A differential amplifier with its inputs ( a )shown as independent of each other and (b) redrawn in terms of the differential and common-mode components.


223

Solving these equations for vol and vv2,we obtain

We have now defined two new input variables and two new output variables. By substituting the expressions for vil, vi2, v01, and v,a in terms of the new variables back into (3.165) and (3.166), we find

voc =

(Ail

-

A12 + A21 4

-

A22 )vid

+

(

A11

i

+ A12 + A21 + A22 vj, 2

(3.180)

Defining four new gain factors that are equal to the coefficients in these equations, (3.179) and (3.180) can be rewritten as

The differential-mode gain Admis the change in the differential output per unit change in differential input:

The common-mode gain A,,, is the change in the common-mode output voltage per unit change in the common-mode input:

is the change in the common-mode The differential-mode-to-common-modegain Ad,-., output voltage per unit change in the differential-mode input:

gain AcmPdmis the change in the differentialThe common-mode-to-diflerential-mode mode output voltage per unit change in the common-mode input:

_The_purpose - ---- -of - a differential amplifier is to sense changes in its differential input while rejecting changes in its common-mode input. The desired output is differential, and it$vHZZ€Ef~Shou1d%e propot9tonal'ro the variation in the differential input. Variation in the common-mode output is undesired because it must be rejected by another differential stage to sense the desired differential signal. Therefore, an important design goal in differential to the other three u f i e----r s is to make 81) __ Adm large compared -- ,and (3.182). '>~&fferential amplifiers with perfect symmetry, each component on the side of one output corresponds to an identical component on the side of the other output. With such --

224 Chapter 3


perfectly balanced amplifiers, when vil = -viz, v,l = -v,z. In other words, when the input is purely differential (vic = O), the output of a perfectly balanced differential ampli= 0 . Similarly, pure common-mode fier is purely differential (v,, = O), and thus inputs (for which vid = 0) produce pure common-mode outputs and Acm-dm = 0 in perfectly balanced differential amplifiers. Even with perfect symmetry, however, Acm Z 0 is possible. Therefore, the ratio Ad,,IAcm is one figure of merit for a differential amplifier, giving the ratio of the desired differential-mode gain to the undesired common-mode gain. In this book, we will define the magnitude of this ratio as the common-mode-rejection ratio, CMRR: CMRR

E

l l Adm

-

Furthermore, since differential amplifiers are not perfectly balanced in practice, AdmPcm# 0 and # 0. The ratios AdmlAcm-dmand AdmlAdm-cmare two other figures of merit that characterize the performance of differential amplifiers. Of these, the first is particularly important because ratio AdmlAcm-dmdetermines the extent to which the differential output is produced by the desired differential input instead of by the undesired cornrnonmode input. This ratio is important because once a common-mode input is converted to a differential output, the result is treated as the desired signal by subsequent differential amplifiers. In fact, in multistage differential amplifiers, the common-mode-to-differentialmode gain of the first stage is usually an important factor in the overall CMRR. In Section 3.5.5, we consider perfectly balanced differential amplifiers from a small-signal standpoint; in Section 3.5.6.9, imperfectly balanced differential amplifiers from the same standpoint.

3.5.5 Small-Signal Characteristics of Balanced Differential Amplifiers In this section, we will study perfectly balanced differential amplifiers. Therefore, Acm-dm = 0 and Ad,,,-,, = 0 here, and our goal is to calculate A d , and A,,. Although calculating Ad, and A,, from the entire small-signal equivalent circuit of a differential amplifier is possible, these calculations are greatly simplified by taking advantage of the symmetry that exists in perfectly balanced amplifiers. In general, we first find the response of a given circuit to pure differential and pure common-mode inputs separately. Then the results can be superposed to find the total solution. Since superposition is valid only for linear circuits, the following analysis is strictly valid only from a small-signal standpoint and approximately valid only for signals that cause negligible nonlinearity. In previous sections, we carried out large-signal analyses of differential pairs and assumed that the Norton-equivalent resistance of the tail current source was infinite. Since this resistance has a considerable effect on the small-signal behavior of differential pairs, however, we now assume that this resistance is finite. Because the analysis here is virtually the same for both bipolar and MOS differential pairs, the two cases will be considered together. Consider the bipolar emitter-coupled pair of Fig. 3.45 and the MOS source-coupled pair of Fig. 3.50 from a small-signal standpoint. Then Vil = vil and V i z = V Q . These circuits are redrawn in Fig. 3 . 5 3 ~and Fig. 3.53b with the common-mode input voltages set to zero so we can consider the effect of the differential-mode input by itself. The small-signal equivalent circuit for both cases is shown in Fig. 3.54 with R used to replace RC in Fig. 3 . 5 3 ~and RD in 3.53b. Note that the small-signal equivalent circuit neglects finite r, in both cases. Also, in the MOS case, nonzero g,b is ignored and r, + because p. -. m.


-

225

Q2

1

"id --

2

RTAIL

Figure 3.53 (a) Emitter-coupled pair with pure differential input. (b)Sourcecoupled pair with pure differential input.

* Figure 3.54 Small-signal equivalent circuit for differential pair with pure differential-mode input.

226

Chapter 3


Figure 3.55 Differential-mode circuit with the tail current source grounded. Because of the symmetry of the circuit, i, = 0.

Because the circuit in Fig. 3.54 is perfectly balanced, and because the inputs are driven by equal and opposite voltages, the voltage across RTAn does not vary at all. Another way to see this result is to view the two lower parts of the circuit as voltage followers. When one side pulls up, the other side pulls down, resulting in a constant voltage across the tail current source by superposition. Since the voltage across RTAILexperiences no variation, the behavior of the small-signal circuit is unaffected by the placement of a short circuit across RTAIL,as shown in Fig. 3.55. After placing this short circuit, we see that the two sides of the circuit are not only identical, but also independent because they are joined at a node that operates as a small-signal ground. Therefore, the response to small-signal differential inputs can be determined by analyzing one side of the original circuit with RTAL replaced by a short circuit. This simplified circuit, shown in Fig. 3.56, is called the diferential-mode half circuit and is useful for analysis of both the low- and highfrequency performance of all types of differential amplifiers. By inspection of Fig. 3.56, we recognize this circuit as the small-signal equivalent of a common-emitter or commonsource amplifier. Therefore,

and

To include the output resistance of the transistor in the above analysis, R in (3.189) should be replaced by R (1 r,. Finally, note that neglecting g,b from this analysis for MOS sourcecoupled pairs has no effect on the result because the voltage from the source to the body of the input transistors is the same as the voltage across the tail current source, which is constant with a pure differential input.


227

Figure 3.57 ( a ) Emitter-coupled pair with pure common-mode input. (b) Source-coupled pair with pure common-mode input.

The circuits in Fig. 3.45 and Fig. 3.50 are now reconsidered from a small-signal, common-mode standpoint. Setting Vil= Vi2 = vie, the circuits are redrawn in Fig. 3.57a and Fig. 3.57b. The small-signal equivalent circuit is shown in Fig. 3.58, but with the modification that the resistor RTAK has been split into two parallel resistors, each of value twice the original. Also R has been used to replace RC in Fig. 3 . 5 7 ~and RD in 3.57b. Again r, is neglected in both cases, and g,b is neglected in the MOS case, where r, because PO m. +

+

228 Chapter 3


"ic

-

-

A m

m

-

Figure 3.58 Small-signal equivalent circuit, pure common-mode input.

Because the circuit in Fig. 3.58 is divided into two identical halves, and because each half is driven by the same voltage vie, no current i, flows in the lead connecting the half circuits. The circuit behavior is thus unchanged when this lead is removed as shown in Fig. 3.59. As a result, we see that the two halves of the circuit in Fig. 3.58 are not only identical, but also independent because they are joined by a branch that conducts no smallsignal current. Therefore, the response to small-signal, common-mode inputs can be determined by analyzing one half of the original circuit with an open circuit replacing the branch that joins the two halves of the original circuit. This simplified circuit, shown in Fig. 3.60, is called the common-mode half circuit. By inspection of Fig. 3.60, we recognize this circuit as a common-emitter or common-source amplifier with degeneration. Then

where G, is the transconductance of a common-emitter or common-source amplifier with degeneration and will be considered quantitatively below. Since degeneration reduces the transconductance, and since degeneration occurs only in the common-mode case, (3.189) and (3.191) show that IAd,l > \A,,); therefore, the differential pair is more sensitive to differential inputs than to common-mode inputs. In other words, the tail current source provides local negative feedback to common-mode inputs (or local common-mode feedback). Negative feedback is studied in Chapter 8.

I

I equivalent circuit.


229

Figure 3.60 half circuit.

Bipolar Emitter-Coupled Pair. For the bipolar case, substituting (3.93) for G, with RE =

2RTAILinto (3.191) and rearranging gives

To include the effect of finite r, in the above analysis, R in (3.192) should be replaced by R 11 R,, where R, is the output resistance of a common-emitter amplifier with emitter degeneration of RE = 2RTAIL,given in (3.97) or (3.98). This substitution ignores the effect of finite r, on G,, which is shown in (3.92) and is usually negligible. The CMRR is found by substituting (3.189) and (3.192) into (3.187), which gives

CMRR

=

1 + 2gmRTAIL

(3.193)

This expression applies to the particular case of a single-stage, emitter-coupled pair. It shows that increasing the output resistance of the tail current source RTMLimproves the common-mode-rejection ratio. This topic is considered in Chapter 4. Since bipolar transistors have finite PO,and since differential amplifiers are often used as the input stage of instrumentation circuits, the input resistance of emitter-coupled pairs is also an important design consideration. The differential input resistance Ridis defined as the ratio of the small-signal differential input voltage v;d to the small-signal input current ib when a pure differential input voltage is applied. By inspecting Fig. 3.56, we find that

Therefore, the differential input resistance of the emitter-coupled pair is

Thus the differential input resistance depends on the r, of the transistor, which increases with increasing POand decreasing collector current. High input resistance is therefore obtained when an emitter-coupled pair is operated at low bias current levels. Techniques to achieve small bias currents are considered in Chapter 4. The common-mode input resistance Ri, is defined as the ratio of the small-signal, common-mode input voltage vi, to the small-signal input current ib in one terminal when a pure common-mode input is applied. Since the common-mode half circuit in Fig. 3.60 is the same as that for a common-emitter amplifier with emitter degeneration, substituting RE = 2RTAILinto (3.90) gives Ric as

230 Chapter 3


figure 3.61 ( a ) General low-frequency, small-signal, T-equivalent input circuit for the differential amplifier. (b)T-equivalent input circuit.

The small-signal input current that flows when both common-mode and differential-mode input voltages are applied can be found by superposition and is given by vid Rid

Zbl = -

Vic +Ric

where ibl and ibZrepresent the base currents of Ql and Q2, respectively. The input resistance can be represented by the .rr equivalent circuit of Fig. 3 . 6 1 ~or by the T-equivalent circuit of Fig. 3.61b. For the .rr model, the common-mode input resistance is exactly Ri, independent of R,. To make the differential-mode input resistance exactly Rid, the value of R, should be more than RLdto account for nonzero current in Ri,. On the other hand, for the T model, the differential-mode input resistance is exactly Rid independent of R,, and the common-mode input resistance is Ri, if Ry is chosen to be less than RiJ2 as shown. The approximations in Fig. 3.61 are valid if Ric is much larger than Rid. MOS Source-Coupled Pair. For the MOS case, substituting (3.104) for Gm with g,b and Rs = 2RTAILinto (3.191) and rearranging gives

=

0

Although (3.199) and the common-mode half circuit in Fig. 3.60 ignore the body-effect transconductance gmb, the common-mode gain depends on gmb in practice because the body effect changes the source-body voltage of the transistors in the differential pair. Since nonzero g,b was included in the derivation of the transconductance of the commonsource amplifier with degeneration, a simple way to include the body effect here is to allow nonzero g,b when substituting (3.104) into (3.191). The result is

To include the effect of finite r , in the above analysis, R in (3.199) and (3.200) should be replaced by R 11 R,, where R, is the output resistance of a common-source amplifier with source degeneration of Rs = 2RTAIL,given in (3.107). This substitution ignores the effect of finite r , on Gm,which is shown in (3.103) and is usually negligible. The CMRR is found by substituting (3.189) and (3.200) into (3.187), which gives


23 1

Equation 3.201 is valid for a single-stage, source-coupled pair and shows that increasing RTAILincreases the CMRR. This topic is studied in Chapter 4.

3.5.6 Device Mismatch Effects in DifferentialAmplifiers An important aspect of the performance of differential amplifiers is the minimum dc and ac differential voltages that can be detected. The presence of component mismatches within the amplifier itself and drifts of component values with temperature produce dc differential voltages at the output that are indistinguishable from the dc component of the signal being amplified. Also, such mismatches and drifts cause nonzero commonmode-to-differential-mode gain as well as nonzero differential-to-common-mode gain to arise. Nonzero Acm-dmis especially important because it converts common-mode inputs to differential outputs, which are treated as the desired signal by subsequent stages. In many analog systems, these types of errors pose the basic limitation on the resolution of the system, and hence consideration of mismatch-induced effects is often central to the design of analog circuits. 3.5.6.1 Input Offset Voltage and Current

For differential amplifiers, the effect of mismatches on dc performance is most conveniently represented by two quantities, the input offset voltage and the input offset current. These quantities represent the input-referred effect of all the component mismatches within the amplifier on its dc performance.11,12As illustrated in Fig. 3.62, the dc behavior of the amplifier containing the mismatches is identical to an ideal amplifier with no mismatches but with the input offset voltage source added in series with the input and the input offset current source in shunt across the input terminals. Both quantities are required to represent the effect of mismatch in general so that the model is valid for any source resistance. For example, if the input terminals are driven by an ideal voltage source with zero resistance, the input offset current does not contribute to the amplifier output, and the offset voltage generator is needed to model the effect of mismatch. On the other hand, if the input terminals are driven by an ideal current source with infinite resistance, the input offset voltage does not contribute to the amplifier output, and the offset current generator is needed to model the effect of mismatch. These quantities are usually a function of both temperature and common-mode input voltage. In the next several sections, we calculate the input offset voltage and current of the emitter-coupled pair and the source-coupled pair.

Differential amplifier with mismatches

(4

Differential amplifier without mismatches (b)

Figure 3.62 Equivalent input offset voltage (Vos) and current (Ios) for a differential amplifier. (a) Actual circuit containing mismatches. (b)Equivalent dc circuit with identically matched de-

vices and the offset voltage and current referred to the input.

232 Chapter 3 m Single-Transistor and Multiple-Transistor Amplifiers 3.5.6.2 Input Offset Voltage of the Emitter-Coupled Pair

The predominant sources of offset error in the emitter-coupled pair are the mismatches in the base width, base doping level, and collector doping level of the transistors, mismatches in the effective emitter area of the transistors, and mismatches in the collector load resistors. To provide analytical results simple enough for intuitive interpretation, the analysis will be carried out assuming a uniform-base transistor. The results are similar for the nonuniform case, although the analytical procedure is more tedious. In most instances the dc base current is low enough that the dc voltage drop in r b is negligible, so we neglect rb. Consider Fig. 3.45 with dc signals so that Vil = VI1, Viz = VI2, Vol = VO1, and Vo2 = VO2.Let VrD = VI1 - V12. Also, assume that the collector resistors may not be identical. Let Rcl and Rc2 represent the values of the resistors attached to Q1 and Q2, respectively. From KVL around the input loop, Therefore,

The factors determining the saturation current Is of a bipolar transistor are described in Chapter l. There it was shown that if the impurity concentration in the base region is uniform, these saturation currents can be written

where WB(VcB) is the base width as a function of VcB, NA is the acceptor density in the base, and A is the emitter area. We denote the product NAWB(VcB) as QB(VcB),the total base impurity doping per unit area. The input offset voltage Vos is equal to the value of VID = VI1 - V12 that must be applied to the input to drive the differential output voltage VoD = Vol - VO2to zero. For VoD to be zero, IclRcl = IC2RC2;therefore,

Substituting (3.204), (3.205), and (3.206) into (3.203) gives Qas (VCB) This expression relates the input offset voltage to the device parameters and RC mismatch. Usually, however, the argument of the log function is very close to unity and the equation can be interpreted in a more intuitively satisfying way. In the following section we perform an approximate analysis, valid if the mismatches are small. 3.5.6.3 Offset Voltage of the Emitter-Coupled Pair: Approximate Analysis

In cases of practical interest involving offset voltages and currents, the mismatch between any two nominally matched circuit parameters is usually small compared with the absolute value of that parameter. This observation leads to a procedure by which the individual contributions to offset voltage can be considered separately and summed.


233

First, define new parameters to describe the mismatch in the components, using the relations

Thus AX is the difference between two parameters, and X is the average of the two nominally matched parameters. Note that AX can be positive or negative. Next invert (3.208) and (3.209) to give

These relations can be applied to the collector resistances, the emitter areas, and the base doping parameters in (3.207) to give

With the assumptions that ARC > 1 and g,r, >> 1, this parallel combination is approximately equal to llgm3.Then the drop across r,4 is

290

Chapter 4

Current Mirrors, Active Loads, and References

Figure 4.26 (a) Small-signal equivalent circuit, differential pair with current-mirror load. (b)

Simplified drawing of small-signal model of differential pair with current-mirror load. We will also assume that the two transistors in the differential pair match perfectly and operate with equal dc currents, as do the two transistors in the current-mirror load. Then grn(dp) = gm1 = gm27 gm(mir) = gm3 = gm49 ra(dp)- ra1 = ra2, rrcmir) = r ~ 3= rr4, ro(dp)- roi = r02, and ro(,ir) - ro3 = ro4. From (4.134), the resulting voltagecontrolled current gm4v3 is

Equations 4.133 and 4.135 show that E, = 0 and thus the active load acts as a current mirror in a small-signal sense, as expected. Using (4.133),the small-signal circuit is redrawn

4.3 Active Loads

291

in Fig. 4.26b with the output grounded to find the transconductance. Note that r,3 is omitted because it is attached to a small-signal ground on both ends. From KCL at node @,

where v1 and v3 are the voltages to ground from nodes @ and 0 . To complete an exact small-signal analysis, KCL equations could also be written at nodes and 0 , and these KCL equations plus (4.136) could be solved simultaneously. However, this procedure is complicated algebraically and leads to an equation that is difficult to interpret. To simplify the analysis, we will assume at first that rtail 00 and r,(dp) + since the transistors are primarily controlled by their base-emitter or gate-source voltages. Then from (4.136)

a

-

where vi, is the common-mode component of the input. Let vid = vil - vi2 represent the differential-mode component of the input. Then vjl = vi, -t vid/2 and vi2 = V j c - vid/2, and the small-signal collector or drain currents

and

With a resistive load and a single-ended output, only i2 flows in the output. Therefore, the transconductance for a differential-mode (dm) input with a passive load is

On the other hand, with the active loads in Fig. 4.25, not only iz but also most of i3 flows in the output because of the action of the current mirror, as shown by (4.135). Therefore, the output current in Fig. 4.26b is Assume at first that the current mirror is ideal so that E, stituting (4.138) and (4.139) in (4.141) gives lout =

gm(dp)vid

=

0. Then since i3

=

-il, sub(4.142)

Therefore, with an active load,

Equation 4.143 applies for both the bipolar and MOS amplifiers shown in Fig. 4.25. Comparing (4.140) and (4.143) shows that the current-mirror load doubles the differential transconductance compared to the passive-load case. This result stems from the fact that the current mirror creates a second signal path to the output. (The first path is through the differential pair.) Although frequency response is not analyzed in this chapter, note that the two signal paths usually have different frequency responses, which is often important in high-speed applications.

292 Chapter 4


Figure 4.27 Circuit for calculation of the output resistance of the differential pair with currentmirror load.

The key assumptions that led to (4.142) and (4.143) are that the current mirror is ideal so E , = 0 and that rtail -+ m and r,(dp) + m. Under these assumptions, the output current is independent of the common-mode input. In practice, none of these assumptions is exactly true, and the output current depends on the common-mode input. However, this dependence is small because the active load greatly enhances the common-mode rejection ratio of this stage, as shown in Section 4.3.5.3. Another important parameter of the differential pair with active load is the output resistance. The output resistance is calculated using the circuit of Fig. 4.27, in which a test voltage source vt is applied at the output while the inputs are connected to small-signal ground. The resulting current it has four components. The current in r,4 is

The resistance in the emitter or source lead of T2 is rtail in parallel with the resistance seen looking into the emitter or source of T 1 ,which is approximately l/gml.Thus, using (3.99) for a transistor with degeneration, we find that the effective output resistance looking into the collector or drain of T2 is

Hence

If rtail >> l/gml,this current flows into the emitter or source of T1, and is mirrored to the output with a gain of approximately unity to produce

Thus

4.3 Active Loads

293

The result in (4.149)applies for both the bipolar and MOS amplifiers shown in Fig. 4.25. In multistage bipolar amplifiers, the low-frequency gain of the loaded circuit is likely to be reduced by the input resistance of the next stage because the output resistance is high. In contrast, low-frequency loading is probably not an issue in multistage MOS amplifiers because the next stage has infinite input resistance if the input is the gate of an MOS transistor. Finally, although the source-coupled pair has infinite input resistance, the emittercoupled pair has finite input resistance because p. is finite. If the effects of the ro of T2 and T4 are neglected, the differential input resistance of the actively loaded emitter-coupled pair is simply 2r,(dp1as in the resistively loaded case. In practice, however, the asymmetry of the circuit together with the high voltage gain cause feedback to occur through the output This feedback causes the input resistance to differ slightly from resistance of T2 to node 2rv(dp) In summary, the actively loaded differential pair is capable of providing differentialto-single-ended conversion, that is, the conversion from a differential voltage to a voltage referenced to the ground potential. The high output resistance of the circuit requires that the next stage must have high input resistance if the large gain is to be realized. A smallsignal two-port equivalent circuit for the stage is shown in Fig. 4.28.

a.

4.3.5.3 Common-Mode Rejection Ratio

In addition to providing high voltage gain, the circuits in Fig. 4.25 provide conversion from a differential input signal to an output signal that is referenced to ground. Such a conversion is required in all differential-input, single-ended output amplifiers. The simplest differential-to-single-ended converter is a resistively loaded differential pair in which the output is taken from only one side, as shown in Fig. 4 . 2 9 ~In. this case, Adm > 0, A,, < 0, and the output is

- -

2

CMRR

Figure 4.28 Two-port representation of

small-signal properties of differential pair with current-mirror load. The effects of asymmetrical input resistance have been neglected.

Chapter 4


Figure 4.29 Differential-to-single-ended conversion using ( a )resistively loaded differential pairs

and ( b ) actively loaded differential pairs.

Thus, common-mode signals at the input will cause changes in the output voltage. The common-mode rejection ratio (CMRR) is

where the common-mode (cm) transconductance is

Since the circuits in Fig. 4.29a are symmetrical, a common-mode half circuit can be used to find Gm[cm].The common-mode half circuit is a common-emitterlsource amplifier with

4.3 Active Loads

295

degeneration. From (3.93) and (3.104),

where gm(dp) = gml = gm;? and rt,,l represents the output resistance of the tail current source T 5 .The negative sign appears in (4.155) because the output current is defined as positive when it flows from the output terminal into the small-signal ground to be consistent with the differential case, as in Fig. 4.26b. Equation 4.155 applies for both the bipolar and MOS cases if the base current is ignored in the bipolar case, the body effect is ignored in the MOS case, and rol and r,2 are ignored in both cases. Substituting (4.140) and (4.155) into (4.153)gives CMRR

=

1 + 2gm(dp)rtail 'gm(dp)rtail = 2

gmlro5

Equation 4.156 shows that the common-mode rejection ratio here is about half that in (3.193)because the outputs in Fig. 4.29 are taken only from one side of each differential pair instead of from both sides, reducing the differential-mode gain by a factor of two. The result in (4.156) applies for both the bipolar and MOS amplifiers shown in Fig. 4 . 2 9 ~ . Because gmro is much higher for bipolar transistors than MOS transistors, the CMRR of a bipolar differential pair with resistive load is much higher than that of its MOS counterpart. On the other hand, the active-load stages shown in Fig 4.29b have common-mode rejection ratios much superior to those of the corresponding circuits in Fig. 4 . 2 9 ~Assume . that the outputs in Fig. 4.29b are connected to small-signal ground to allow calculation of the common-mode transconductance. The small-signal model is the same as shown in Fig. 4.26b with vil = vi2 = vie. For simplicity, let p. and r, CO at first. As with a resistive load, changes in the common-mode input will cause changes in the tail bias current itailbecause the output resistance of T5 is finite. If we assume that the currents in the differential-pair transistors are controlled only by the base-emitter or gate-source voltages, the change in the current in T1and T2is +

+

If E , = 0, the gain of the current mirror is unity. Then substituting (4.157) into (4.141) with ig = - il gives As a result, G,[cm]

=

iout

(4.159)

v,,, = O

Therefore, CMRR

(4.160)

+ CO

The common-mode rejection ratio in (4.160)is infinite because the change in the current in T4 cancels that in T2 even when rtail is finite under these assumptions. The key assumptions that led to (4.160) are that ro(dp) SO il = i2 and that the current mirror is ideal so E, = 0. In practice, the currents in the differential-pair transistors are not only controlled by their base-emitter or gate-source voltages, but also to some extent by their collector-emitter or drain-source voltages. As a result, il is not exactly equal to i2 because of finite ro(dp) in T1and T2. Furthermore, the gain of the current mirror is not -+

296

Chapter 4


exactly unity, which means that E , is not exactly zero in practice because of finite ro(mir) in T3 and T4. Finite PO also affects the systematic gain error of the current mirror when bipolar transistors are used. For these reasons, the common-mode rejection ratio is finite in practice. However, the use of the active load greatly improves the common-mode rejection ratio compared to the resistive load case, as we will show next. Suppose that where ~d can be thought of as the gain error in the differential pair. Substituting (4.161) into (4.141)with i3 = -il gives

Rearranging (4.162)gives If ~d l and (g,(mir)r,(,ir~/2) >> 1, (4.180) can be simplified to give

Comparing (4.18 1) and (4.156) shows that the active load increases the common-mode rejection ratio by a factor of about 2g,(,il) (ro(dp)ll(r,(,ir)/2)) for the bipolar circuit in Fig. 4.29b compared to its passive-load counterpart in Fig. 4 . 2 9 ~ . On the other hand, for the MOS circuit in Fig. 4.29b, substituting (4.173) and (4.179) into (4.167) gives CMRR

-

,

1 + 2gm(dp)rtail

(4.182)

If (gm(mir)ro(dp)) >> 1 and (gm(,i,~ro(mir)) >> 1, (4.182) can be simplified to give

Comparing (4.183) and (4.156) shows that the active load increases the common-mode for the MOS circuit in Fig. 4.29b rejection ratio by a factor of about 2gm(mir)(ro(dp~~~ro~mir)) compared to its passive-load counterpart in Fig. 4 . 2 9 ~ . For these calculations, perfect matching was assumed so that g,l = gm2,gm3 = gm4, rol = ro2, and ro3 = ro4. In practice, however, nonzero mismatch occurs. With mismatch in a MOS differential pair using a current-mirror load, the differential-mode transconductance is

where Agml-2 = gm1 - gm22 gm1-2 = (gm1 + g d 2 , Agm3-4 = gm3 - gm43 and gm3-4 = (gm3f gm4)/2.See Problem 4.18. The approximation in (4.184) is valid to the extent that gmro>> 1 for each transistor and (gml+ gm2)rtail>> 1 for the tail current source. Equation 4.184 shows that the mismatch between gml and g,2 has only a minor effect on G,[dm]. This result stems from the fact that the small-signal voltage across the tail current source, vhil, is zero with a purely differential input only when gml = gm2, assuming r,l + and r,2 m. For example, increasing gm, compared to gm2tends to increase the smallsignal drain current il if v,,l is constant. However, this change also increases v,il, which reduces v,,~for a fixed vid. The combination of these two effects causes il to be insensitive to gmr - gm2. On the other hand, mismatch between g,3 and g,4 directly modifies the contribution of il through the current mirror to the output current. Therefore, (4.184) shows that G,[dm] is most sensitive to the mismatch between gm3and gm4. With mismatch in a MOS differential pair using a current-mirror load, the commonmode transconductance is +

4.4 Voltage and Current References

299

where ~d is the gain error in the source-coupled pair with a pure common-mode input defined in (4.161)and E , is the gain error in the current mirror defined in (4.133).From Problem 4.19,

Each term in (4.186) corresponds to one source of gain error by itself, and interactions between terms are ignored. The first term in (4.186) is consistent with (4.173) when gm3r0(dp)>> l and stems from the observation that the drain of T 1 is not connected to a small-signal ground during the calculation of Gm[dm], unlike the drain of T2.The second term in (4.186)stems from mismatch between g,l and g,2 alone. The third term in (4.186) stems from the mismatch between rol and r,2 alone. The contribution of this mismatch to G, [cm]is significant because the action of the current mirror nearly cancels the contributions of the input g , generators to G,[cm] under ideal conditions, causing Gm[cm] 0 in (4.166). In contrast, G,[dm] is insensitive to the mismatch between rol and r02 because the dominant contributions to G,[dm] arising from the input g , generators do not cancel at the output. From Problem 4.19,

-

Each term in (4.187) corresponds to one source of gain error by itself, and interactions between terms are ignored. The first term in (4.187), which is consistent with (4.179) when gm3r03 >> 1 , stems from the observation that the small-signal input resistance of the The second term in (4.187) stems from current mirror is not exactly l/gm3but (l/gm3)llro3. mismatch between g,g and g,4 alone. The CMRR with mismatch is the ratio of G,[dm] in (4.184)to G, [cm]in (4.185),using (4.186)and (4.187)for ~d and E,, respectively. Since the common-mode transconductance is very small without mismatch (as a result of the behavior of the current-mirror load), mismatch usually reduces the CMRR by increasing IGm[cmlI.

4.4 Voltage and Current References 4.4.1 Low-Current Biasing 4.4.1.1 Bipolar Widlar Current Source

In ideal operational amplifiers, the current is zero in each of the two input leads. However, the input current is not zero in real op amps with bipolar input transistors because PF is finite. Since the op-amp inputs are usually connected to a differential pair, the tail current must usually be very small in such op amps to keep the input current small. Typically, the tail current is on the order of 5 pA. Bias currents of this magnitude are also required in a variety of other applications, especially where minimizing power dissipation is important. The simple current mirrors shown in Fig. 4.30 are usually not optimum for such small currents. For example, using a simple bipolar current mirror as in Fig. 4 . 3 0 ~and assuming a maximum practical emitter area ratio between transistors of ten to one, the mirror would need an input current of 50 pA for an output current of 5 pA. If the power-supply voltage in Fig. 4.30a is 5 V, and if VB,qon)= 0.7 V, R = 86 kC! would be required. Resistors of this magnitude are costly in terms of die area. Currents of such low magnitude can be obtained

300

Chapter 4

Current Mirrors, Active Loads, and References Vcc

"DD

~IIN

+'IN

R

O t

'OUT

R

O i

'OUT

0

*-I

M1

--

-

(4

(b)

Figure 4.30 Simple two-transistor current mirrors where the input current is set by the supply

voltage and a resistor using (a) bipolar and (b) MOS transistors.

with moderate values of resistance, however, by modifying the simple current mirror so that the transistors operate with unequal base-emitter voltages. In the Widlar current source of Fig. 4.3 la, resistor R:! is inserted in series with the emitter of Q2, and transistors Q, and Q2 operate with unequal base emitter voltages if R2 Z This circuit is referred to as a current source rather than a current mirror because the output current in Fig. 4 . 3 1 ~ is much less dependent on the input current and the power-supply voltage than in the simple current mirror of Fig. 4.30a, as shown in Section 4.4.2. We will now calculate the output current of the Widlar current source. If Im > 0, Q1 operates in the forward-active region because it is diode connected. Assume that Q2 also operates in the forward active region. KVL around the base-emitter loop gives 0

J&

.

~

~

1

~

~

VDD

1'.

14.

p4

RI O r u r

l

Q1

--

M1

t

-=

R,

(4

(b)

Figure 4.31 Widlar current sources: (a) bipolar and (b) MOS.


301

If we assume that VBEl = VBE2= VBE(on) = 0.7 V in (4.188), we would predict that IoUT = 0. Although IoUT is small in practice, it is greater than zero under the usual bias conditions, which means that the standard assumption about VBE(on) is invalid here. In contrast, the standard assumption is usually valid in calculating IINbecause small variations . one base-emitter voltage is subin VBElhave little effect on IINif VCC>> V B E l When tracted from another, however, small differences between them are important. If V A -+ a , (4.188) can be rewritten using (1.35) as

If PF

3

a, (4.189)

simplifies to

For identical transistors, Isl and ls2are equal, and (4.190) becomes

This transcendental equation can be solved by trial and error to find louTif R2 and Im are known, as in typical analysis problems. Because the logarithm function compresses changes in its argument, attention can be focused on the linear term in (4.191), simplifying convergence of the trial-and-error process. In design problems, however, the desired Im and loUT are usually known, and (4.191) provides the required value of R2. EXAMPLE

In the circuit of Fig. 4.3 la, determine the proper value of R2 to give IoUT that Vcc = 5 V, R1 = 4.3 k a , V B E ( ~= " ) 0.7 V, and PF m.

=

5 pA. Assume

+

Thus from (4.19 1) IoUTR2 = 137 mV

and

The total resistance in the circuit is 3 1.7 kfl. EXAMPLE

In the circuit of Fig. 4.31a, assume that IIN = 1 mA, R2 IOUT.From (4.191),

=

5 kfl, and

PF

+

a.

Find

302

Chapter 4

fl


The linear term IOUTR2is too small; therefore, IoUT > 15 p A should be tried. Try

IoUT = 20 p A 101.7 mV - 100 mV

rn

-

0

Therefore, the output current is close to 20 pA. Notice that while the linear term increased by 25 mV from the first to the second trial, the logarithm term decreased by only about 6 mV because the logarithm function compresses changes in its argument. 4.4.1.2 MOS Widlar Current Source

The Widlar configuration can also be used in MOS technology, as shown in Fig. 4.31b. If IIN > 0, M 1 operates in the active region because it is diode connected. Assume that M2 also operates in the forward active region. KVL around the gate-source loop gives

If we ignore the body effect, the threshold components of the gate-source voltages cancel and (4.192) simplifies to

If the transistors operate in strong inversion and V A -+

This quadratic equation can be solved for

a,

G.

where VOv1 = , / ~ I ~ ~ I [ ~ ' ( w From I L )(1.157), ~].

Equation 4.196 applies only when M2 operates in the active region, which means that > 0 and the potential solution where the second term in VGsZ > V t .As a result, the numerator of (4.195) is subtracted from the first, cannot occur in practice. Therefore,

Equation 4.197 shows that a closed-form solution for the output current can be written for a Widlar current source that uses MOS transistors operating in strong inversion, unlike the bipolar case where trial and error is required to find IouT.


303

EXAMPLE

In Fig. 4.31b, find IoUT if IIN = 100 pA, R2 = 4 kn, k' = 200 p N v 2 , and (WIL)] = (WIL)% = 25. Assume the temperature is 27•‹C and that n = 1.5 in (1.247). Then R2 = 0.004 MSZ, = J ~ o o / ( ~ o oX 25) V = 0.2 V,

and IoUT = 25 pA. Also, Therefore, both transistors operate in strong inversion, as assumed. 4.4.1.3 Bipolar Peaking Current Source

The Widlar source described in Section 4.4.1.1 allows currents in the microamp range to be realized with moderate values of resistance. Biasing integrated-circuit stages with currents on the order of nanoamps is often desirable. To reach such low currents with moderate values of resistance, the circuit shown in Fig. 4.32 can be ~ s e d . ' Neglecting ~ ~ ' ~ ~ base ~ ~ currents, we have \

If VA

-+

03,

(4-198) can be rewritten using (1.35) as

If Q, and Q2 are identical, (4.199) can be rewritten as IoUT

=

Im exp

( 9) -

Equation 4.200 is useful for analysis of a given circuit. For design with identical Ql and Q 2 , (4.199) can be rewritten as VT InR= IIN

+

IIN

[OUT

Figure 4.32 Bipolar peaking current source.

(4.20 1)

304

Chapter 4

8


Figure 4.33 Transfer characteristics of the bipolar peaking current source with T = 27•‹C

-

For example, for IIN = 10 pA and IoUT = 100 nA, (4.201) can be used to show that R 12 k f l . A plot of IoUT versus Im from (4.200) is shown in Fig. 4.33. When the input current = Im. AS the is small, the voltage drop on the resistor is small, and VBE2* VBElSO IOUT input current increases, VBElincreases in proportion to the logarithm of the input current while the drop on the resistor increases linearly with the input current. As a result, increases in the input current eventually cause the base-emitter voltage of Q2 to decrease. The output current reaches a maximum when VBE2is maximum. The name peaking current source stems from this behavior, and the location and magnitude of the peak both depend on R. 4.4.1.4 MOS Peaking Current Source

The peaking-current configuration can also be used in MOS technology, as shown in Fig. 4.34. If IINis small and positive, the voltage drop on R is small and M1 operates in the active region. Assume that M2 also operates in the active region. KVL around the gate-source loop gives Since the sources of M 1 and M2 are connected together, the thresholds cancel and (4.202) simplifies to

Figure 4.34 MOS peaking current source.


305

From (1.157),

where Vovl = , / ~ I ~ I [ ~ ~ ( W 1. IEquation L ) ~ 4.204 assumes that the transistors operate in strong inversion. In practice, the input current is usually small enough that the overdrive of M 1 is less than 2nVT, where n is defined in (1.247) and VT is a thermal voltage. Equation 4.203 shows that the overdrive of M2 is even smaller than that of M,. Therefore, both transistors usually operate in weak inversion, where the drain current is an exponential function of the gate-source voltage as shown in (1.252). If VDsl > 3VT, applying (1.252) to M1 and substituting into (4.202) gives

Then if the transistors are identical and VDS2 > 3VT, substituting (4.205) into (1.252) gives

where I, is given by (1.251) and represents the drain current of M2 with VGS2= V*, WIL = 1, and VDs >> V T . Comparing (4.206) with (4.200) shows that the output current in an MOS peaking current source where both transistors operate in weak inversion is the same as in the bipolar case except that 1.3 In 5 1.5 in the MOS case and n = 1 in the bipolar case. Plots of (4.206) and (4.204) are shown in Fig. 4.35 for n = 1.5, T = 27"C, R = 10 k f l , k' = 200 F ~ / ~and 2 ,(WILl2 = (WIL)l = 25. In both cases, when the input current is small, the voltage drop on the resistor is small, and IoUT = Im. AS the input current increases, VGsl increases more slowly than the drop on the resistor. As a result, increases in the input current eventually cause the gate-source voltage of M2 to decrease. The output current reaches a maximum when VGs2 is maximum. As in the bipolar case, the name peaking current source stems from this behavior, and the location and magnitude of the peak both depend on R. Because the overdrives on both transistors are usually very small, the strong-inversion equation (4.204) usually underestimates the output current.

Figure 4.35 Transfer characteris-

tics of the MOS peaking current source assuming both transistors operate in weak inversion or in strong inversion.

306 Chapter 4 = Current Mirrors, Active Loads, and References 4.4.2 Supply-InsensitiveBiasing

Consider the simple current mirror of Fig. 4.30a, where the input current source has been replaced by a resistor. Ignoring the effects of finite PF and VA,(4.5)shows that the output current is

If Vcc >> VBE(on), this circuit has the drawback that the output current is proportional to the power-supply voltage. For example, if VBE(on)= 0.7 V, and if this current mirror is used in an operational amplifier that has to function with power-supply voltages ranging from 3 V to 10 V, the bias current would vary over a four-to-one range, and the power dissipation would vary over a thirteen-to-one range. One measure of this aspect of bias-circuit performance is the fractional change in the bias current that results from a given fractional change in supply voltage. The most useful parameter for describing the variation of the output current with the power-supply voltage is the sensitivity S. The sensitivity of any circuit variable y to a parameter X is defined as follows:

Applying (4.208) to find the sensitivity of the output current to small variations in the power-supply voltage gives

The supply voltage VsUpis usually called Vcc in bipolar circuits and VDDin MOS circuits. If Vcc >> VeE(on)in Fig. 4.30a, and if VDD>> VGsl in Fig. 4.30b,

Equation 4.210 shows that the output currents in the simple current mirrors in Fig. 4.30 depend strongly on the power-supply voltages. Therefore, this configuration should not be used when supply insensitivity is important. 4.4.2.1 Widlar Current Sources

For the case of the bipolar Widlar source in Fig. 4.3 la, the output current is given implicitly to the power-supply voltage, this equation by (4.191).To determine the sensitivity of IoUT is differentiated with respect to Vcc:

Differentiating yields

Solving this equation for dlouT/dVcc, we obtain


307


IIN = VCC/R1and the sensitivity of Im to Vcc is approximately unity, If Vcc >> VBE(on), as in the simple current mirror of Fig. 4.30~.For the example in Section 4.4.1.1 where IIN = 1 mA, IoUT = 5 FA, and R2 = 27.4 kfi, (4.214) gives

Thus for this case, a 10 percent power-supply voltage change results in only 1.6 percent change in IOUT. For the case of the MOS Widlar source in Fig. 4.31b, the output current is given by (4.197). Differentiating with respect to VDDgives

where


-

Since IoUT is usually much less than IIN, Vov2is usually small and IOUTR2 (4.2 18) simplifies to

Vovl and

If VDD>> VGSl,IIN = VDDIR1and the sensitivity of IN to VDDis approximately unity, as in the simple current mirror of Fig. 4.30b. Thus for this case, a 10 percent power-supply voltage change results in a 5 percent change in IouT. 4.4.2.2 Current Sources Using Other Voltage Standards

The level of power-supply independence provided by the bipolar and MOS Widlar current sources is not adequate for many types of analog circuits. Much lower sensitivity can be obtained by causing bias currents in the circuit to depend on a voltage standard other than the supply voltage. Bias reference circuits can be classified according to the voltage standard by which the bias currents are established. The most convenient standards are the base-emitter or threshold voltage of a transistor, the thermal voltage, or the breakdown voltage of a reverse-biased pn junction (a Zener diode). Each of these standards can be used to reduce supply sensitivity, but the drawback of the first three standards is that the

308

Chapter 4


Figure 4.36 (a) Base-emitter referenced current source. (b) Threshold referenced current source.

reference voltage is quite temperature dependent. Both the base-emitter and threshold voltages have negative temperature coefficients of magnitude 1 to 2 mVI0C, and the thermal voltage has a positive temperature coefficient of klq = 86 pVI0C. The Zener diode has the disadvantage that at least 7 to 10 V of supply voltage are required because standard integrated-circuit processes produce a minimum breakdown voltage of about 6 V across the most highly doped junctions (usually npn transistor emitter-base junctions). Furthermore, pn junctions produce large amounts of voltage noise under the reverse-breakdown conditions encountered in a bias reference circuit. Noise in avalanche breakdown is considered further in Chapter 11. We now consider bias reference circuits based on the base-emitter or gate-source voltage. The circuit in simplest form in bipolar technology is shown in Fig. 4.36a. This circuit is similar to a Wilson current mirror where the diode-connected transistor is replaced by a resistor. For the input current to flow in T1, transistor T2 must supply enough current into R2 so that the base-emitter voltage of T1 is

is equal to the current flowing through R2. Since the If we neglect base currents, IoUT voltage drop on R2 is V B E 1the , output current is proportional to this base-emitter voltage. Thus, neglecting base currents, we have

Differentiating (4.221) and substituting into (4.209) gives

IIN= VCCIRIand the sensitivity of Imto Vcc is approximately unity. If Vcc >> 2VBE(on), With VBE(on) = 0.7 V,

4.4 Voltage a n d Current References

309

Thus for this case, a 10 percent power-supply voltage change results in a 0.37 percent The result is significantly better than for a bipolar Widlar current source. change in IOUTThe MOS counterpart of the base-emitter reference is shown in Fig. 4.36b. Here

The case of primary interest is when the overdrive of T 1is small compared to the threshold voltage. This case can be achieved in practice by choosing sufficiently low input current and large (WIL)l.In this case, the output current is determined mainly by the threshold voltage and R2. Therefore, this circuit is known as a threshold-referenced bias circuit. Differentiating (4.224)with respect to VDDand substituting into (4.209)gives

For example, if Vt

=

l V, VmI

=

0.1 V, and

=

1

These circuits are not fully supply independent because the base-emitter or gatesource voltages of T 1 change slightly with power-supply voltage. This change occurs because the collector or drain current of T 1 is approximately proportional to the supply voltage. The resulting supply sensitivity is often a problem in bias circuits whose input current is derived from a resistor connected to the supply terminal, since this configuration causes the currents in some portion of the circuit to change with the supply voltage. 4.4.2.3 Self Biasing

Power-supply sensitivity can be greatly reduced by the use of the so-called bootstrap bias technique, also referred to as selfbiasing. Instead of developing the input current by connecting a resistor to the supply, the input current is made to depend directly on the output current of the current source itself. The concept is illustrated in block-diagram form in . that the feedback loop formed by this connection has a stable operFig. 4 . 3 7 ~Assuming ating point, the currents flowing in the circuit are much less sensitive to power-supply voltage than in the resistively biased case. The two key variables here are the input current, I N ,

/

Current mirror

I

'our

t Current mirror

4 N = 'OUT \,,/

'

1

OUT Current source

Current source

1 b

11 N

Figure 4.37 ( a )Block diagram of a self-biased reference. (b) Determination of operating point.

3 10 Chapter 4


and the output current, ZoUT. The relationship between these variables is governed by both the current source and the current mirror. From the standpoint of the current source, the output current is almost independent of the input current for a wide range of input currents as shown in Fig. 4.37b. From the standpoint of the current mirror, ITN is set equal to IouT, assuming that the gain of the current mirror is unity. The operating point of the circuit must satisfy both constraints and hence is at the intersection of the two characteristics. In the plot of Fig. 4.37b, two intersections or potential operating points are shown. Point A is the desired operating point, and point B is an undesired operating point because IoUT = z, = 0. If the output current in Fig. 4 . 3 7 increases ~ for any reason, the current mirror increases the input current by the same amount because the gain of the current mirror is assumed to be unity. As a result, the current source increases the output current by an amount that depends on the gain of the current source. Therefore, the loop responds to an initial change in the output current by further changing the output current in a direction that reinforces the initial change. In other words, the connection of a current source and a current mirror as shown in Fig. 4 . 3 7 ~forms a positive feedback loop, and the gain around the loop is the gain of the current source. In Chapter 9, we will show that circuits with positive feedback are stable if the gain around the loop is less than unity. At point A, the gain around the loop is quite small because the output current of the current source is insensitive to changes in the input current around point A. On the other hand, at point B, the gain around the feedback loop is deliberately made greater than unity so that the two characteristics shown in Fig. 4.37b intersect at a point away from the origin. As a result, this simplified analysis shows that point B is an unstable operating point in principle, and the circuit would ideally tend to drive itself out of this state. In practice, however, point B is frequently a stable operating point because the currents in the transistors at this point are very small, often in the picoampere range. At such low current levels, leakage currents and other effects reduce the current gain of both bipolar and MOS transistors, usually causing the gain around the loop to be less than unity. As a result, actual circuits of this type are usually unable to drive themselves out of the zerocurrent state. Thus, unless precautions are taken, the circuit may operate in the zero-current condition. For these reasons, self-biased circuits often have a stable state in which zero current flows in the circuit even when the power-supply voltage is nonzero. This situation is analogous to a gasoline engine that is not running even though it has a full tank of fuel. An electrical or mechanical device is required to start the engine. Similarly, a start-up circuit is usually required to prevent the self-biased circuit from remaining in the zero-current state. The application of this technique to the VBE-referencedcurrent source is illustrated in Fig. 4.38a, and the threshold-referenced MOS counterpart is shown in Fig. 4.3827. We assume for simplicity that V A -+ W. The circuit composed of T1, T2, and R dictates that the current IoUTdepends weakly on ZIN, as indicated by (4.221) and (4.224). Second, the current mirror composed of matched transistors T4 and T5 dictates that IINis equal to ZOUT.The operating point of the circuit must satisfy both constraints and hence is at the intersection of the two characteristics as in Fig. 4.373. Except for the effects of finite output resistance of the transistors, the bias currents are independent of supply voltage. If required, the output resistance of the current source and mirror could be increased by the use of cascode or Wilson configurations in the circuits. The actual bias currents for other circuits are supplied by T6 andfor T3, which are matched to T5 and Tl, respectively. The zero-current state can be avoided by using a start-up circuit to ensure that some current always flows in the transistors in the reference so that the gain around the feedback loop at point B in Fig. 4.37b does not fall below unity. An additional requirement is that


Figure 4.38 (a) Self-biasing VBEreference. (b) Self-biasing V,

3 11

reference.

the start-up circuit must not interfere with the normal operation of the reference once the desired operating point is reached. The Vm-referenced current source with a typical start-up circuit used in bipolar technologies is illustrated in Fig. 4 . 3 9 ~We . first assume that the circuit is in the undesired zero-current state. If this were true, the base-emitter voltage of T 1 would be zero. The base-emitter voltage T2 would be tens of rnillivolts above ground, determined by the leakage currents in the circuit. However, the voltage on the left-hand end of D 1is four diode drops above ground, so that a voltage of at least three diode drops would appear across R,, and a current would flow through R, into the T1-T2combination. This action would cause current to flow in T4 and T5, avoiding the zero-current state. The bias reference circuit then drives itself toward the desired stable state, and we require that the start-up circuit not affect the steady-state current values. This can be accomplished by causing R, to be large enough that when the steady-state current is established in T 1 ,the voltage drop across R, is large enough to reverse bias D 1 . In the steady state, the collector-emitter voltage of T 1 is two diode drops above ground, and the left-hand end of D 1is four diode drops above ground. Thus if we make ImR, equal to two diode drops, D 1will have zero voltage across it in the steady state. As a result, the start-up circuit composed of R,, D2-D5, and D 1is, in effect, disconnected from the circuit for steady-state operation. Floating diodes are not usually available in MOS technologies. The thresholdreferenced current source with a typical start-up circuit used in MOS technologies is illustrated in Fig. 4.39b. If the circuit is in the undesired zero-current state, the gatesource voltage of T 1 would be less than a threshold voltage. As a result, T7 is off and T g operates in the triode region, pulling the gate-source voltage of T9 up to VDD.Therefore, T9 is on and pulls down on the gates of T4 and Ts. This action causes current to flow in T4 and T 5 ,avoiding the zero-current state. In steady state, the gate-source voltage of T7 rises to IOUTR,which turns on T7 and reduces the gate-source voltage of T9. In other words, T7 and T g form a CMOS inverter

312 Chapter 4


Figure 4.39 (a) Self-biasing VBEreference with

start-up circuit. (b) Self-biasing V, reference with

start-up circuit. whose output falls when the reference circuit turns on. Since the start-up circuit should not interfere with normal operation of the reference in steady state, the inverter output should fall low enough to turn T9 off in steady state. Therefore, the gate-source voltage of T9 must fall below a threshold voltage when the inverter input rises from zero to IouTR. In practice, this requirement is satisfied by choosing the aspect ratio of T7 to be much larger than that of T8. Another important aspect of the performance of biasing circuits is their dependence on temperature. This variation is most conveniently expressed in terms of the fractional change in output current per degree centigrade of temperature variation, which we call the

4.4Voltage and Current References 3 13

fractional temperature coefficient T C F :

For the VBE-referencedcircuit of Fig. 4.38a,

Therefore,

Thus the temperature dependence of the output current is related to the difference between the resistor temperature coefficient and that of the base-emitter junction. Since the former has a positive and the latter a negative coefficient, the net TCF is quite large. EXAMPLE Design a bias reference as shown in Fig. 4.38a to produce 100 pA output current. Find the TCF.Assume that for T 1 ,Is = 10-l4 A. Assume that dVBE/dT = -2mVI0C and that (l/R)(dRldT)= + 1500 ppd•‹C. The current in T1 will be equal to IOUT,SO that

Thus from (4.228),

From (4.23l ) ,

and thus

W

The term ppm is an abbreviation for parts per million and implies a multiplier of 1OP6. For the threshold-referenced circuit of Fig. 4.38b,

Differentiating (4.232) and substituting into (4.227) gives

314 Chapter 4


Figure 4.40 Example of a VBE-

referenced self-biased circuit in CMOS technology.

Since the threshold voltage of an MOS transistor and the base-emitter voltage of a bipolar transistor both change at about -2 mVIoC, (4.233)and (4.23 1 ) show that the temperature dependence of the threshold-referenced current source in Fig. 4.38b is about the same as the VBE-referencedcurrent source in Fig. 4 . 3 8 ~ . VBE-referencedbias circuits are also used in CMOS technology. An example is shown in Fig. 4.40, where the pnp transistor is the parasitic device inherent inp-substrate CMOS technologies. A corresponding circuit utilizing npn transistors can be used in n-substrate CMOS technologies. The feedback circuit formed by M2, M3,M4, and Ms forces the current in transistor Ql to be the same as in resistor R. Assuming matched devices, VGS2= VGS3and thus

An alternate source for the voltage reference is the thermal voltage V T .The difference in junction potential between two junctions operated at different current densities can be shown to be proportional to VT. This voltage difference must be converted to a current to provide the bias current. For the Widlar source shown in Fig. 4.31a, (4.190) shows that the voltage across the resistor R2 is

Thus if the ratio of the input to the output current is held constant, the voltage across R2 is indeed proportional to V T .This fact is utilized in the self-biased circuit of Fig. 4.41. Here Q3 and Q4 are selected to have equal areas. Therefore, if we assume that PF -+ and V A -+ a,the current mirror formed by Q3 and Q4 forces the collector current of Ql to equal that of Q2. Figure 4.41 also shows that Q2 has two emitters and Ql has one emitter, which indicates that the emitter area of Q2 is twice that of Ql in this example. This selection is made to force the gain around the positive feedback loop at point B in Fig. 4.37b to be more than unity so that point B is an unstable operating point and a stable nonzero operating point exists at point A. As in other self-biased circuits, a start-up circuit is required to make sure that enough current flows to force operation at point A in Fig. 4.37b in practice. Under these conditions, IS2 = 21S1and the voltage across R2 is


3 15

Figure 4.41 Bias current source using the

thermal voltage.

Therefore, the output current is

The temperature variation of the output current can be calculated as follows. From (4.237)

Substituting (4.237) in (4.238) gives

This circuit produces much smaller temperature coefficient of the output current than the VBEreference because the fractional sensitivities of both VT and that of a diffused resistor R:! are positive and tend to cancel in (4.239). We have chosen a transistor area ratio of two to one as an example. In practice, this ratio is often chosen to minimize the total area required for the transistors and for resistor R2.

EXAMPLE Design a bias reference of the type shown in Fig. 4.41 to produce an output current of 100 FA. Find the TCF of IOUT. Assume the resistor temperature coefficient (lIR)(dRIdT) = + 1500 ppmI0C. From (4.237)

316 Chapter 4

m Current Mirrors, Active Loads,and References

From (4.239)

Assuming operation at room temperature, T

=

300•‹Kand

VT-referenced bias circuits are also commonly used in CMOS technology. A simple example is shown in Fig. 4.42, where bipolar transistors Ql and Q2 are parasitic devices inherent in p-substrate CMOS technologies. Here the emitter areas of these transistors differ by a factor n, and the feedback loop forces them to operate at the same bias current. As a result, the difference between the two base-emitter voltages must appear across resistor R. The resulting current is

In the circuit of Fig. 4.42, small differences in the gate-source voltages of M3 and M4 result in large variations in the output current because the voltage drop across R is only on the order of 100 mV. Such gate-source voltage differences can result from device mismatches or from channel-length modulation in M3 and M4 because they have different drain-source voltages. Practical implementations of this circuit typically utilize large geometry devices for M gand M4 to minimize offsets and cascode or Wilson current sources to minimize channel-length modulation effects. A typical example of a practical circuit is shown in Fig. 4.43. In general, cascoding is often used to improve the performance of reference circuits in all technologies. The main limitation of the application of cascoding is that it increases the minimum required power-supply voltage to operate all transistors in the active region.

Figure 4.42 Example of a CMOS V r referenced self-biased circuit.


3 17

Figure 4.43 Example of a CMOS V T referenced self-biased reference circuit with cascoded devices to improve power-supply rejection and initial accuracy.

4.4.3 Temperature-Insensitive Biasing

As illustrated by the examples in Section 4.4.2, the base-emitter-voltage- and thermalvoltage-referenced circuits have rather high temperature coefficients of output current. Although the temperature sensitivity is reduced considerably in the thermal-voltage circuit, even its temperature coefficient is not low enough for many applications. Thus we are led to examine other possibilities for the realization of a biasing circuit with low temperature coefficient. 4.4.3.1 Band-Gap-Referenced Bias Circuits in Bipolar Technology

Since the bias sources referenced to VBE(on)and VT have opposite T C F ,the possibility exists for referencing the output current to a composite voltage that is a weighted sum of VBE(on)and V T .By proper weighting, zero temperature coefficient should be attainable. In the biasing sources described so far, we have concentrated on the problem of obtaining a current with low temperature coefficient. In practice, requirements often arise for low-temperature-coefficientvoltage bias or reference voltages. The voltage reference for a voltage regulator is a good example. The design of these two types of circuits is similar except that in the case of the current source, a temperature coefficient must be intentionally introduced into the voltage reference to compensate for the temperature coefficient of the resistor that will define the current. In the following description of the band-gap reference, we assume for simplicity that the objective is a voltage source of low temperature coefficient. First consider the hypothetical circuit of Fig. 4.44. An output voltage is developed that is equal to VBE(on)plus a constant M times V T .To determine the required value for M, we must determine the temperature coefficient of VBE(,,,,). Neglecting base current,

3 18 Chapter 4


generator

/

Figure 4.44 Hypothetical

band-gap reference circuit.

t T

As shown in Chapter 1, the saturation current Is can be related to the device structure by

where ni is the intrinsic minority-carrier concentration, QBis the total base doping per unit area, p,, is the average electron mobility in the base, A is the emitter-basejunction area, and T is the temperature. Here, the constants B and B' involve only temperature-independent quantities. The Einstein relation p,, = (qlkT)D, was used to write Is in terms of p,, and n:. The quantities in (4.242) that are temperature dependent are given by15 (4.243)

f i n = CT-"

where VGOis the band-gap voltage of silicon extrapolated to 0•‹K.Here again C and D are temperature-independent quantities whose exact values are unimportant in the analysis. The exponent n in the expression for base-region electron mobility p, is dependent on the doping level in the base. Combining (4.241), (4.242), (4.243), and (4.244) yields V B E ( ~=~VT ) In

exp -

(4.245)

where E is another temperature-independent constant and y =4-n

(4.246)

In actual band-gap circuits, the current Zlis not constant but varies with temperature. We assume for the time being that this temperature variation is known and that it can be written in the form I I = GT" (4.247)


3 19

where G is another temperature-independent constant. Combining (4.245) and (4.247) gives VBE(O,) = VGO- VT [(Y - f f )ln 7' - ln(EG)I

(4.248)

From Fig. 4.44, the output voltage is (4.249)

VOUT = VBE(O~) f MVT

Substitution of (4.248) into (4.249) gives VoUT = VGO- VT( y

-

a ) ln T

+ VT [M + ln(E G)]

(4.250)

This expression gives the output voltage as a function of temperature in terms of the circuit parameters G, a , and M, and the device parameters E and y . Our objective is to make VoUT independent of temperature. To this end, we take the derivative of VoUT with respect to temperature to find the required values of G, y , and M to give zero T C F .Differentiating (4.250) gives

where To is the temperature at which the TCF of the output is zero and VTOis the thermal voltage VT evaluated at To.Equation 4.251 can be rearranged to give This equation gives the required values of circuit parameters M, a , and G in terms of the device parameters E and y . In principle, these values could be calculated directly from (4.252). However, further insight is gained by back-substituting (4.252) into (4.250). The result is

Thus the temperature dependence of the output voltage is entirely described by the single parameter To,which in turn is determined by the constants M, E, and G. Using (4.253), the output voltage at the zero TCF temperature (T = To) is given by

For example, to achieve zero TCF at 27OC, assuming that y = 3.2 and a

=

1,

The band-gap voltage of silicon is VGO = 1.205 V so that

Therefore, the output voltage for zero temperature coefficient is close to the band-gap voltage of silicon, which explains the name given to these bias circuits. Differentiating (4.253) with respect to temperature yields

320 Chapter 4


Figure 4.45 Variation of band-gap reference output voltage with temperature.

Equation 4.257 gives the slope of the output as a function of temperature. A typical family of output-voltage-variation characteristics is shown in Fig. 4.45 for different values of To for the special case in which a = 0 and Il is temperature independent. The slope of each curve is zero at T = To. When T < To,the slope is positive because the argument of the logarithm in (4.257) is more than unity. Similarly, the slope is negative when T > To. For values of T near To,

and we have

As shown by (4.257) and (4.259), the temperature coefficient of the output is zero only at one temperature T = To. This result stems from the addition of a weighted thermal voltage to a base-emitter voltage as in Fig. 4.44. Since the temperature coefficient of base-emitter voltage is not exactly constant, the gain M can be chosen to set the temperature coefficient of the output to zero only at one temperature. In other words, the thermal voltage generator is used to cancel the linear dependence of the base-emitter voltage with temperature. After this cancellation, the changing outputs in Fig. 4.45 stem from the nonlinear dependence of the base-emitter voltage with temperature. Band-gap references that compensate for this nonlinearity are said to be curvature ~orn~ensated.'~~'~~~~ EXAMPLE A band-gap reference is designed to give a nominal output voltage of 1.262 V, which gives zero TCF at 27•‹C.Because of component variations, the actual room temperature output voltage is 1.280 V. Find the temperature of actual zero TCF of VOUT.Also, write an equation for VoUT as a function of temperature, and calculate the TCF at room temperature. Assume that y = 3.2 and a = 1.


From (4.253) at T

=

321

27•‹C = 300•‹K,

and thus

Therefore, the TCF will be zero at To

From (4.259) with T

=

300•‹Kand To

=

=

41 1•‹K= 138"C, and we can express VoUTas

41 1•‹K

Therefore, the T CF at room temperature is

To reduce the TCF, the constant M in (4.249)-(4.252) is often trimmed at one temperature so that the band-gap output is set to a desired target voltage.19 In principle, the target voltage is given by (4.253). In practice, however, significant inaccuracy in (4.253) stems from an approximation in (4.244).20As a result, the target voltage is usually determined experimentallyby measuring the T CF directly for several samples of each band-gap reference in a given p r o c e ~ s .This ~ ~ ,procedure ~~ reduces the T CF at the reference temperature to a level of about 10 ppm/ "C. A key parameter of interest in reference sources is the variation of the output that is encountered over the entire temperature range. Since the TCF expresses the temperature sensitivity only at one temperature, a different parameter must be used to characterize the behavior of the circuit over a broad temperature range. An effective temperature coefficient can be defined for a voltage reference as

where VMAXand VMw are the largest and smallest output voltages observed over the tem- TMLN is the temperature excursion. VoUTis the nominal output perature range, and TMAX voltage. By this standard, TCF(eff)over the -55 to 125•‹Crange for case (b) of Fig. 4.45 is 44 pprnf'c. If the temperature range is restricted to 0 to 70•‹C, TCF(eff)improves to 17 ppd0C. Thus over a restricted temperature range, this reference is comparable with the standard cell in temperature stability once the zero TCF temperature has been set at room temperature. Saturated standard cells (precision batteries) have a TCF of about 2 30 ppm/"C. Practical realizations of band-gap references in bipolar technologies take on several forms.15~19~23 One such circuit is illustrated in Fig. 4.46a.I5 This circuit uses a feedback loop to establish an operating point in the circuit such that the output voltage is equal to a VB,qon)plus a voltage proportional to the difference between two base-emitter voltages. The operation of the feedback loop is best understood by reference to Fig. 4.46b, in which a portion of the circuit is shown. We first consider the variation of the output voltage V2 as the input voltage V1 is varied from zero in the positive direction. Initially, with V1 = 0,

322 Chapter 4


devices Ql and Q2 do not conduct and V2 = 0.As V1 is increased, Ql and Q2 do not conduct significant current until the input voltage reaches about 0.6 V. When V1 < 0.6V1 V2 = V1 since the voltage drop on R2 is zero. When V1 exceeds 0.6 V, however, Ql begins to conduct current, corresponding to point @ in Fig. 4.46b. The magnitude of the current in Ql is roughly equal to (V1 - 0.6 V)IR1. For small values of this current, Q1 and Q2 carry the same current because the drop across R3 is negligible at low currents. Since R2 is much larger than R1, the voltage drop across R2 is much larger than (V1- 0.6 V), and transistor Q2 saturates, corresponding to point Qin Fig. 4.46b. Because of the presence of R3, the collector current that would flow in Q2 if it were in the forward-active region has an approximately logarithmic dependence on V1, exactly as in the Widlar source. Thus as V1 is further increased, a point is reached at which Q2 comes out of saturation because V1 increases faster than the voltage drop across R2. This point is labeled point @in Fig. 4.46b. Now consider the complete circuit of Fig. 4.46~.If transistor Q3 is initially turned off, transistor Q4will drive V1 in the positive direction. This process will continue until enough voltage is developed at the base of Q3to produce a collector current in Q3 approximately equal to I. Thus the circuit stabilizes with voltage V2 equal to one diode drop, the baseemitter voltage of Q3,which can occur at point @ or point @ in Fig. 4.46b. Appropriate start-up circuitry must be included to ensure operation at point @. Assuming that the circuit has reached a stable operating point at point @, the output voltage VoUT is the sum of the base-emitter voltage of Q3 and the voltage drop across R2. The drop across R2 is equal to the voltage drop across R3 multiplied by R21R3 because the collector current of Q2 is approximately equal to its emitter current. The voltage drop across Rg is equal to the difference in base-emitter voltages of Ql and Q2. The ratio of currents in Ql and Q2 is set by the ratio of R2 to RI. A drawback of this reference is that the current I is set by the power supply and may vary with power-supply variations. A self-biased band-gap reference circuit is shown in Fig. 4.46~.Assume that a stable operating point exists for this circuit and that the op amp is ideal. Then the differential input voltage of the op amp must be zero and the voltage drops across resistors R1 and R2 are equal. Thus the ratio of R2 to R1 determines the ratio of II to 12. These two currents are the collector currents of the two diode-connected transistors Q2 and Q1, assuming base currents are negligible. The voltage across R3 is

Since the same current that flows in R3 also flows in R2, the voltage across R2 must be

This equation shows that the voltage across R2 is proportional to absolute temperature (PTAT) because of the temperature dependence of the thermal voltage. Since the op amp forces the voltages across RI and R2 to be equal, the currents Il and I2 are both proportional to temperature if the resistors have zero temperature coefficient. Thus for this reference, a = l in (4.247). The output voltage is the sum of the voltage across Q2, R3, and R2:


323

v,,

I

1

(C)

Figure 4.46 (a)Widlar band-gap reference. (b) Band-gap subcircuit. (c) Improved band-gap reference.

The circuit thus behaves as a band-gap reference, with the value of M set by the ratios of Rzl R3, R 2 / R 1 ,and IS2/Zs1. 4.4.3.2 Band-Gap-Referenced Bias Circuits in CMOS Technology

Band-gap-referenced biasing also can be implemented using the parasitic bipolar devices inherent in CMOS technology. For example, in a n-well process, substrate p n p transistors can be used to replace the npn transistors in Fig. 4.46c, as shown in Fig. 4.47. Assume that the CMOS op amp has infinite gain but nonzero input-referred offset voltage Vos. (The input-referred offset voltage of an op amp is defined as the differential input voltage required to drive the output to zero.) Because of the threshold mismatch and the low transconductance per current of CMOS transistors, the offset of op amps in CMOS technologies is usually larger than in bipolar technologies. With the offset voltage, the voltage across R3 is

324 Chapter 4

m

Current Minors, Active Loads, and References

Figure 4.47 A band-

p;ammx in n-well The emitter-base voltages are used here because the base-emitter voltages of the pnp transistors operating in the forward-active region are negative. Then the voltage across R2 is

and the output voltage is18

Since the difference in the base-emitter voltages is proportional to the thermal voltage, comparing (4.266)with Vos = 0 to (4.249) shows that the gain M here is proportional to (1 + R2/R3).Rearranging (4.266)gives

where the output-referred offset is

Equations 4.267 and 4.268 show that the output contains an offset voltage that is a factor of ( 1 + R2/R3)times bigger than the input-referred offset voltage. Therefore, the same gain that is applied to the difference in the base-emitter voltages is also applied to the input-referred offset voltage. Assume that the offset voltage is independent of temperature. To set TCF of the output equal to zero, the gain must be changed so that temperature coefficients of the VEB and AVEB terms cancel. Since the offset is assumed to be temperature independent, this cancellation occurs when the output is equal to the target, where zero offset was assumed, plus the output-referred offset. If the gain is trimmed at T = To to set the output to a target voltage assuming the offset is zero, (4.267)shows that the gain is too small if the offset voltage is positive and that the gain is too big if the offset voltage is negative. Since the gain is applied to the PTAT term, the resulting slope of the output versus temperature is negative when the offset is positive and the gain is too small. On the other hand, this slope is positive when the offset is negative and the gain is too big. We will now calculate the magnitude of the slope of the output versus temperature at T = To. With zero offset and a target that assumes zero offset, trimming R2 andfor R3 to


325

set the output in (4.267) to the target forces the slope of the AVEBterm to cancel the slope of the V E term. ~ With nonzero offset but the same target, the factor (1 + R2/R3) differs from its ideal value after trimming by -VOS(outjAVE~. Since this error is multiplied by AVEBin (4.267), the resulting slope of the output versus temperature is

Since AVEBis proportional to the thermal voltage VT, where H is a temperature-independent constant. Substituting (4.270) into (4.269) gives

Therefore, when the gain is trimmed at one temperature to set the band-gap output to a desired target voltage, variation in the op-amp offset causes variation in the output temperature coefficient. In practice, the op-amp offset is usually the largest source of nonzero temperature coeffi~ient.'~ Equation 4.271 shows that the temperature coefficient at T = To is proportional to the output-referred offset under these circumstances. Furthermore, (4.268) shows that the output-referred offset is equal to the gain that is applied to the A V E ~term times the input-referred offset. Therefore, minimizing this gain minimizes the variation in the temperature coefficient at the output. Since the reference output at T = To for zero TCF is approximately equal to the band-gap voltage, the required gain can be minimized by maximizing the AVEBterm. To maximize the AVEB term, designers generally push a large current into a small transistor and a small current into a large transistor, as shown in Fig. 4.48. Ignoring base currents,

Equation 4.272 shows that maximizing the product of the ratios 11/12and Is2/IS1 maximizes AVEB. In Fig. 4.48, I1 > I2is emphasized by drawing the symbol for II larger than the symbol for 12. Similarly, the emitter area of Q2 is larger than that of Ql to make Is2 > ISl,and this relationship is shown by drawing the symbol of Q2 larger than the symbol of Q1.24 In practice, these ratios are often each set to be about equal to ten, and the resulting AVEB'= 120 mV at room temperature. Because the logarithm function compresses its argument, however, a limitation of this approach arises. For example, if the argument is increased by a factor of ten, AVEBincreases by only V, ln(l0) 60 mV. Therefore, to

-

-

m

m

AVEB

< +

-

=

Figure 4.48 A circuit that increases A V E B by increasing 11112 and I s d I s l .

326

Chapter 4

H


Figure 4.49 A circuit that cascades emitter followers to double AVEB if IS3 = I S , and Is4 =

IS^.

double AVEBto 240 mV, (Ill12)(IS2/IS1) must be increased by a factor of 100 to 10,000. On the other hand, if Q,and the transistors that form I2 are minimum-sized devices when (11/12)(IS2/IS1) = 100,the required die area would be dominated by the biggest devices (Q2andlor the transistors that form Il). Therefore, increasing (11/12)(IS2/IS1) from 100 to 10,000would increase the die area by about a factor of 100 but only double AVEB. To overcome this limitation, stages that each contribute to AVEB can be cascaded.25 For example, consider Fig. 4.49, where two emitter-follower stages are cascaded. Here

Assume the new devices in Fig. 4.49 are identical to the corresponding original devices in Fig. 4.48 so that I3 = I,,I4 = I2 Is3 = IS1,and ZS4 = Is2. Then ignoring base currents

& Figure 4.50 Example of a VBE-referencedself-biased reference circuit in CMOS technology.

A.4.1 MATCHING CONSIDERARTION IN CURRENT MIRRORS

327

Thus cascading two identical emitter followers doubles AVEB while only doubling the required die area. The effect of the offset in a band-gap reference can also be reduced by using offset cancellation. An example of offset cancellation in a CMOS band-gap reference with curvature correction in addition to an analysis of other high-order effects arising from finite PF, PF mismatch, PF variation with temperature, nonzero base resistance, and nonzero temperature coefficient in the resistors is presented in Ref. 18. A high-performance CMOS band-gap reference is shown in Fig. 4.50, where cascoded current mirrors are used to improve supply rejection. A VT-dependent current from MI1 develops a VT-dependentvoltage across resistor xR. A proper choice of the ratio X can give a band-gap voltage at VOUT.If desired, a temperature-independent output current can be realized by choosing X to give an appropriate temperature coefficient to VoUTto cancel the temperature coefficient of resistor R2.

APPENDIX A.4.1 MATCHING CONSIDERARTION IN CURRENT MIRRORS In many types of circuits, an objective of current-mirror design is generation of two or more current sources whose values are identical. This objective is particularly important in the design of digital-to-analog converters, operational amplifiers, and instrumentation amplifiers. We first examine the factors affecting matching in active current mirrors in bipolar technologies and then in MOS technologies.

A.4.1.1 BIPOLAR

Consider the bipolar current mirror with two outputs in Fig. 4.51. If the resistors and transistors are identical and the collector voltages are the same, the collector currents will match precisely. However, mismatch in the transistor parameters a~ and Is and in the emitter resistors will cause the currents to be unequal. For Q3,

Figure 4.51 Matched bipolar current sources.

328

Chapter 4

m


Ic4

VT In-

15'4

Ic4 + -R4 ffF4

=

VB

Subtraction of these two equations gives VT In-Ic3 Ic4

-

VT In-Is3 4

Ic3 + -R3 ffF3

Ic4

- -R4 a

~

=

0

4

We now define average and mismatch parameters as follows:

These relations can be inverted to give the original parameters in terms of the average and mismatch parameters. For example,

This set of equations for the various parameters is now substituted into (4.277). The result is

The first term in this equation can be rewritten as

A.4.1 MATCHING CONSIDERARTION IN CURRENT MIRRORS

329

If AZc/2Zc 0 and loUT2 > 0. Therefore, with perfectly matched transistors, the output currents are less than the input current, and the errors in the output currents can be predicted by an analysis similar to that presented in Section 4.4.1 for Widlar current sources. The key point here is that Rsl and RS2 increase as the distances between the input and output transistors increase, increasing the errors in the output currents. As a result of both of these disadvantages, the output currents may have considerable variation from one IC to another with voltage routing, increasing the difficulty of designing the circuits biased by M2 and M3 to meet the required specifications even if IN is precisely controlled. To overcome these problems, the circuit in Fig. 4.53 can be built so that M1-M3 are close together physically, and the current outputs IoUTl and IoUTZare routed as required on the IC. This case is referred to as an example of the current routing of bias signals. Current routing reduces the problems with mismatch and supply resistance by reducing the distances between the input and output transistors in the current mirror in Fig. 4.53

332

Chapter 4 m Current Mirrors, Active Loads, and References

+

Figure 4.54 Bias-distribution circuit using both current routing and voltage routing.

compared to voltage routing. One disadvantage of current routing is that it requires one node to be routed for each bias signal. Therefore, when the number of bias outputs is large, the die area required for the interconnect to distribute the bias currents can be much larger than that required with voltage routing. Another disadvantage of current routing is that it can increase the parasitic capacitance on the drains of M2 and M 3 . If these nodes are connected to circuits that process high-frequency signals, increased parasitic capacitance can reduce performance in some ways. For example, if M2 and M3 act as the tail current sources of differential pairs, increased parasitic capacitance will increase the commonmode gain and reduce the common-mode rejection ratio of each differential pair at high frequencies. In practice, many ICs use a combination of current- and voltage-routing techniques. For example, Fig. 4.54 shows a circuit with five current mirrors, where the input and output currents are still referenced as in Fig. 4.53. If the current routing bus in Fig. 4.54 travels over a large distance, the parasitic capacitances on the drains of M2 and M3 may be large. However, the parasitic capacitances on the drains of M7 and MI1 are minimized by using voltage routing within each current mirror. Although simple current mirrors are shown in Fig. 4.54, cascoding is often used in practice to reduce gain errors stemming from a finite Early voltage. In ICs using both current and voltage routing, currents are routed globally and voltages locally, where the difference between global and local routing depends on distance. When the distance is large enough to significantly worsen mismatch or supplyresistance effects, the routing is global. Otherwise, it is local. An effective combination of these bias distribution techniques is to divide an IC into blocks, where bias currents are routed between blocks and bias voltages within the blocks.

A.4.2 INPUT OFFSET VOLTAGE OF DIFFERENTIAL PAIR WITH ACTIVE LOAD A.4.2.1 BIPOLAR

For the resistively loaded emitter-coupled pair, we showed in Chapter 3 that the input offset voltage arises primarily from mismatches in Is in the input transistors and from

A,4.2 INPUT OFFSET VOLTAGE OF DIFFERENTIAL PAIR WITH ACTIVE LOAD

333

mismatches in the collector load resistors. In the active-load case, the input offset voltage results from nonzero base current of the load devices and mismatches in the input transistors and load devices. Refer to Fig. 4.25a. Assume the inputs are grounded. If the matching is perfect and if PF + in T3 and T4, Equation 4.306 holds because only this output voltage forces VCE3 = VCE4,where Icl = IC2and VBEl = VBE2,which is required by KVL when VI1 = VIZ. The differential input required to drive the output to the value given by (4.306)is the input-referred offset voltage. With finite PF in the active-load transistors andor device mismatch, the offset is usually nonzero. In the active-load, KVL shows that VBE~= VBE~

(4.307)

Solving (1.58) for VBE3and VBE4and substituting in (4.307) gives

Assume that the Early voltages of T3 and T4 are identical. Since VCE3 = VCE4 when (4.306) is satisfied, (4.308) can be simplified to

Since IC2= -IC4, (4.309) can be written as

From KCL at the collector of T3,

where PF is the ratio of the collector to base current in the active-load devices. From KVL in the input loop, (4.3 12) VID = V11 - V12 = VBE~- VBE~ Then the input offset voltage, Vos, is the value of VID for which the output voltage is given by (4.306). If the Early voltages of T 1 and T2 are identical, solving (1.58) for VsEl and VBE2 and substituting into (4.312) gives

because VCEl = VCE2 when (4.306) is satisfied. Substituting (4.310) and (4.311) in (4.3 13) gives

If the mismatches are small, this expression can be approximated as

334

Chapter 4


using the technique described in Section 3.5.6.3, where

In the derivation of (4.315), we assumed that the Early voltages of matched transistors are identical. In practice, mismatch in Early voltages also contributes to the offset, but the effect is usually negligible when the transistors are biased with collector-emitter voltages much less than their Early voltages. Assuming a worst-case value for AIs/Is of -+5 percent and a pnp beta of 20, the worst-case offset voltage is

To find the worst-case offset, we have added the mismatch terms for the pnp and n p n transistors in (4.320) instead of subtracting them as shown in in (4.315) because the mismatch terms are random and independent of each other in practice. Therefore, the polarity of the mismatch terms is unknown in general. Comparing (4.320) to (3.219) shows that the actively loaded differential pair has significantly higher offset than the resistively loaded case under similar conditions. The offset arising here from mismatch in the load devices can be reduced by inserting resistors in series with the emitters of T 3 and T4 as shown in Section A.4.1. To reduce the offset arising from finite PF in the load devices, the current mirror in the load can use a beta helper transistor as described in Section 4.2.3. A.4.2.2 MOS

The offset in the CMOS differential pair with active load shown in Fig. 4.2517 is similar to the bipolar case. If the matching is perfect with the inputs grounded,

Equation 4.321 holds because only this output voltage forces VDS3 = VDS4,where I I = I2 and VGsl = VGSZ,which is required by KVL when VI1 = V12The differential input required to drive the output to the value given by (4.321) is the input-referred offset voltage. With device mismatch, the offset is usually nonzero.

Assume that the Early voltages of T 1 and T2 are identical. Since VDsl when VID = Vos, applying (1.165) to Vovl and VoR in (4.322) gives

If the mismatches are small, this expression can be approximated as

=

VDs2

=

VDsN

A.4.2 INPUT OFFSET VOLTAGE OF DIFFERENTIAL PAIR WITH ACTIVE LOAD

335


Since Il

= -I3

and I2

= -I4

where

To find A I p / I p , we will use KVL in the gate-source loop in the load as follows Since T3 and T4 are p-channel transistors, their overdrives are negative. Assume that the Early voltages of T3 and T4 are identical. Since V D S 3 = VDS4 = VDSPwhen V I D = Vos (4.333) can be rewritten as

In (4.334), absolute value functions have been used so that the arguments of the square-root functions are positive. If the mismatches are small, this expression can be approximated as



336

Chapter 4


Comparing (4.339) to (4.315) shows that the MOS differential pair with active load includes terms to account for threshold mismatch but excludes a term to account for finite beta in the active load because PF + in MOS transistors. EXAMPLE Find the input-referred offset voltage of the circuit in Fig. 4.25b using the transistor parameters in the table below.

Transistor

T1 T2 T3 T4

V, (V) 0.705 0.695 -0.698 -0.702

W (pm) 49 51 103 97

L (pm) l 1 1 1

k' (p,AlV2) 100 100 50 50

Assume that ITAIL = 200 p A and that ANVosN < < l and and KCL,

1 , and 2gmzrtai1>> 1 . (b) Use (4.173) to calculate ~ d with perfect matching, where e d represents the gain error of the differential pair with a pure common-mode input and is defined in (4.161). (C) Calculate ~ d if llgm3= 0 and if the only mismatch is g,, # gm2. (d) Calculate ~ d if l/gm3 = 0 and if the only mismatch is r , ~# r02.

340 Chapter 4

Current Mirrors, Active Loads,and References

(C) Transistor M2 must operate in the active reincluding rnis(e) Now estimate the total match by adding the values calculated in parts (b), gion if the voltage from the drain of M2 to ground (c), and (d). Show that the result agrees with (4.186) is at least 0.2 V. if g m 3 r o ( d p ) >> 1. (d) The output resistance should be 50 MC!. (0 Calculate E,,, which represents the gain erIgnore the body effect. Assume LdWn= 1 p m ror of the current mirror and is defined in (4.133). and Xd = Ld = 0. Use Table 2.4 for other Show that the result agrees with (4.187). parameters. (g) Calculate the value of G,[cm] using 4.24 Design the MOS peaking current source in (4.185) and the CMRR for the data given in Prob- Fig. 4.34 so that I o U=~0.1 pA. lem 4.18. Compare your answer with a SPICE sim(a) First, let IIN= 1 FA and find the required ulation. Also, compare your answer to the result value of R. that would apply without mismatch. (b) Second, let R = 10 kfl and find the re4.20 Design a Widlar current source using npn quired IIN. transistors that produces a 5-pA output current. Use In both cases, assume that both transistors are Fig. 4.3 1a with identical transistors, Vcc = 30 V, identical and operate in weak inversion with It = and R1 = 30 kCl. Find the output resistance. 0.1 p,A and n = 1.5. Also, find the minimum WIL 4.21 In the design of a Widlar current source of in both cases, assuming that VGS- Vt < 0 is reFig. 4.3 1a to produce a specified output current, two quired to operate a transistor in weak inversion as resistors must be selected. Resistor R1 sets IIN,and shown in Fig. 1.45. the emitter resistor R:! sets louT.Assuming a supply 4.25 Determine the output current and output voltage of Vcc and a desired output current I O U ~ , resistance of the circuit shown in Fig. 4.6 1. determine the values of the two resistors so that the total resistance in the circuit is minimized. Your answer should be given as expressions for R1 and R:! in terms of Vcc and I O U What ~ . values would these expressions give for Problem 4.20? Are these values practical? 4.22 Determine the output current in the circuit of Fig. 4.60.

+ Figure 4.61 Circuit for Problem 4.25.


4.23 Design a MOS Widlar current source using the circuit shown in Fig. 4.31b to meet the following constraints with VDD = 3 V: (a) The input current should be 100 FA, and the output current should be 10 pA. (b) V,", = 0.2 V.

4.26 Determine the value of sensitivity S of output current to supply voltage for the circuit of Fig. 4.62, where S = (Vcc/lou~)(dIou~/dVcc). 4.27 In the analysis of the hypothetical reference of Fig. 4.44, the current I, was assumed proportional to temperature. Assume instead that this current is derived from a diffused resistor, and thus has a TCF of - 1500 pprn/"C. Determine the new value of V o U ~required to achieve zero TCF at 25•‹C.Neglect base current.

Problems

341

value. Assume VOS = 0. What is dVouT/dT at 25"C? Neglect base currents. 4.30 Simulate the band-gap reference from Problem 4.29 on SPICE. Assume that the amplifier is just a voltage-controlled voltage source with an open-loop gain of 10,000 and that the resistor values are independent of temperature. Also assume that Is, = 1.25 X 10-l7 A and Is2 = 1 X 10-l6 A. In SPICE, adjust the closed-loop gain of the amplifier (by choosing suitable resistor values) so that the output TCF is zero at 25•‹C. What is the resulting target value of VOUT?NOWdouble Isl and IS^. Use SPICE to adjust the gain so that VoUTis equal to the target at 25•‹C.Find the new dVoUTldT at 25•‹Cwith SPICE. Compare this result with the calculations from Problem 4.29. 4.31 Repeat Problem 4.29 assuming that the Figure 4.62 Circuit for Problem 4.26. values of Is, R2, and RI are nominal but that R3 is l percent low. Assume VBE(on) = 0.6 V . 4.28 The circuit of Fig. 4 . 4 6 ~is to be used as 4.32 A band-gap reference circuit is shown in a band-gap reference. If the op amp is ideal, its Fig. 4.63. Assume that PF + m, V A -+ m, ZS1 = differential input voltage and current are both zero 1 X 10-l5 A, and IS2 = 8 X A. Assume the and op amp is ideal except for a possibly nonzero offset voltage Vos, which is modeled by a voltage source in Fig. 4.63. (a) Suppose that R2 is trimmed to set VoUT equal to the target voltage for which d VouTldT = Assume that II is to be made equal to 200 pA, and 0 at T = 25•‹Cwhen Vos = 0. Find dVoUTldT at that ( V B -~ VBE2) ~ is to be made equal to 100 mV. T = 25•‹Cwhen Vos = 30 mV. (b) Under the conditions in part (a), is Determine R I ,R2, and R3 to realize zero TCF of VoU~ at 25•‹C.Neglect base currents. d VouTldT positive or negative? Explain. 4.29 A band-gap reference like that of Fig. 4.47 4.33 For the circuit of Fig. 4.64, find the value is designed to have nominally zero TCF at 25•‹C. of WIL for which dVGsldT = 0 at 25•‹C.Assume Due to process variations, the saturation current that the threshold voltage falls 2 mV for each IS of the transistors is actually twice the nominal 1•‹Cincrease in temperature. Also, assume that the

*

4 Figure 4.63 Band-gap reference circuit for Problem 4.32.

342 Chapter 4


mobility temperature dependence is given by (4.243) with n = 1.5. Finally, use Table 2.4 for other parameters at 25"C, and let I = 200 pA.

effect. Comment on the temperature dependence of the bias current. Assume a channel mobility and oxide thickness from Table 2.4. Compare your calculations to a SPICE simulation using a full circuit model from Table 2.4, and also use SPICE to determine the supply-voltage sensitivity of IBIAS.

50

50

-

1

M3

1

M4 (I

M2

1

1

Figure 4.64 Circuit for Problem 4.33. 4.34 Calculate the bias current of the circuit shown in Fig. 4.65 as a function of R, p,C,,,

(WIL)I,and (WIL)2.Comment on the temperature behavior of the bias current. For simplicity, assume that Xd = Ld = 0 and ignore the body effect. Assume M4 is identical to Mg.

* Figure 4.65 Circuit for Problem 4.34. 4.35 The circuit of Fig. 4.65 produces a supplyinsensitive current. Calculate the ratio of smallsignal variations in IBIAs to small-signal variations in VDDat low frequencies. Ignore the body effect but include finite transistor r, in this calculation. 4.36 For the bias circuit shown in Fig. 4.66, determine the bias current. Assume that Xd = LA = 0. Neglect base currents and the bodv

%A Q2

-

lzB'As 32

100 Q1

IX

-

1ox

transistors Bipolar

Figure 4.66 Circuit for Problem 4.36. 4.37 A pair of bipolar current sources is to be designed to produce output currents that match with 5 1 percent. If resistors display a worst-case mismatch of ? O S percent, and transistors a worst-case VBE mismatch of 2 mV, how much voltage must be dropped across the emitter resistors? 4.38 Determine the worst-case input offset voltage for the circuit of Fig. 4.58. Assume the worstcase Is mismatches in the transistors are +5 percent and PF = 15 for the pnp transistors. Assume the dc output voltage is VsUp - I VB/?(on) 1. 4.39 Repeat Problem 4.38, but assume that 2-kfl resistors are placed in series with the emitters of Q3 and Q4. Assume the worst-case resistor mismatch is 20.5 percent and the worst-case pnp PF mismatch is t- 10 percent. 4.40 Repeat Problem 4.38 but replace the bipolar transistors with MOS transistors as in Problem 4.14. Assume the worst-case WIL mismatches in the transistors are %5 percent and the worst-case V, mismatches are 5 10 mV. Assume the dc output voltage to ground is VsUp - IVGS31.Also, assume that (WIL),+ (WIL)2= 20 and (WIL)3+(WIL)4 = 60. Use Table 2.4 to calculate the transconductance

References

343

REFERENCES 1. Y. P. Tsividis. Operation and Modeling of the MOS Transistol; McGraw Hill, New York, 1987, p. 139. 2. J.-B. Shyu, G. C. Temes, and F. Krurnmenacher. "Random Error Effects in Matched MOS Capacitors and Current Sources," IEEE Journal of Solid-State Circuits, Vol. SC-19, pp. 948-955, December 1984. 3. K. R. Lakshmikumar, R. A. Hadaway, and M. A. Copeland. "Characterisation and Modeling of Mismatch in MOS Transistors for Precision Analog Design," IEEE Journal of Solid-State Circuits, Vol. SC-21, pp. 1057-1066, December 1986. 4. M. J. M. Pelgrom, A. C. 3. Duinmaijer, and A. P. G. Webers. "Matching Properties of MOS Transistors," IEEE Joumal of Solid-State Circuits, Vol. 24, pp. 1433-1440, October 1989. 5. W.-J, Hsu, B. J. Sheu, and S. M. Gowda. "Design of Reliable VLSI Circuits Using Simulation Techniques," IEEE Journal of Solid-State Circuits, Vol. 26, pp. 452457, March 1991. 6. T. C. Choi, R. T. Kaneshiro, R. W. Brodersen, P. R. Gray, W. B. Jett, and M. Wilcox. "HighFrequency CMOS Switched-Capacitor Filters for Communications Application," IEEE Journal of Solid-state Circuits, Vol. SC-18, pp. 652464, December 1983. 7. N. S. Sooch. "MOS Cascode Current Mirror," U.S. Patent 4,550,284, October 1985. 8. G. R. Wilson. "A Monolithic Junction FETn-p-n Operational Amplifier," IEEE Journal of Solid-State Circuits, Vol. SC-3, pp. 341-348, December 1968. 9. D. Fullagar. "A New-Performance Monolithic Operational Amplifier," Fairchild Semiconductor Applications Brie$ May 1968. 10. R. J. Widlar. "Some Circuit Design Techniques for Linear Integrated Circuits," IEEE Transactions on Circuit Theory, Vol. CT-12, pp. 586590, December 1965. 11. R. J. Widlar. "Design Techniquesfor Monolithic Operational Amplifiers," IEEE Journal of Solid-State Circuits, Vol. SC-4, pp. 184-191, August 1969.

12. M. Nagata. "Constant Current Circuits," Japanese Patent 628,228, May 6, 1971. 13. T. M. Frederiksen. "Constant Current Source," U.S. Patent 3,659,121, April 25, 1972. 14. C. Y. Kwok. "Low-Voltage Peaking Complementary Current Generator," IEEE Journal of Solid-State Circuits, Vol. SC-20, pp. 816-818, June 1985. 15. R. J. Widlar. "New Developments in IC Voltage Regulators," IEEE Journal of Solid-state Circuits, Vol. SC-6, pp. 2-7, February 1971. 16. C. R. Palmer and R. C. Dobkin. "A Curvature Corrected Micropower Voltage Reference," Inte~nationalSolid-State Circuits Conference, pp. 58-59, February 1981. 17. G. C. M. Meijer, P. C. Schmale, and K. van Zalinge. "A New Curvature-Corrected Bandgap Reference," IEEE Journal of Solid-State Circuits, Vol. SC-17, pp. 1139-1143, December 1982. 18. B.-S. Song and P. R. Gray. "A Precision Curvature-Compensated CMOS Bandgap Reference," IEEE Journal of Solid-State Circuits, Vol. SC-18, pp. 634-643, December 1983. 19. A. P. Brokaw. "A Simple Three-Terminal IC Bandgap Reference," ZEEE Journal of SolidState Circuits, Vol. SC-9, pp. 388-393, December 1974. 20. Y. P. Tsividis. "Accurate Analysis of TemE with perature Effects in Ic - V ~ Characteristics Application to Bandgap Reference Sources," IEEE Journal of Solid-state Circuits, Vol. SC- 15, pp. 1076-1084, December 1980. 21. A. P. Brokaw. Private Communication. 22. R. A. Pease. Private Communication. 23. K. E. Kuijk. "A Precision Reference Voltage Source," IEEE Journal of Solid-State Circuits, Vol. SC-8, pp. 222-226, June 1973. 24. T. R. Viswanathan. Private Communication. 25. E. A. Vittoz and 0. Neyroud. "A LowVoltage CMOS Bandgap Reference," IEEE Journal of Solid-State Circuits, Vol. SC-14, pp. 573577, June 1979.

Output Stages 5.1 Introduction The output stage of an amplifier must satisfy a number of special requirements. Onkof -p ~ toO_a r the most important requirements is to deliver a specified amount -of--signal load with acceptably low levels of s i g d distorti&&other common a b i e c e e of stage design is to minimize the output impedance so that the voltage gain is relative11 _ unaffected by the value of load impedance. A well-designed output stage should achieve these performance specifications while consuming low quiescent power and, in addition, should not be a major limitation on the frequency response of the amplifier. In this chapter, several output-stage configurations will be considered to satisfy the above requirements. The .-A -simplest output-stage configurations are the emitter and source followers. More complex output stages employing multiple output devices are also treated, and comparisons are made of power-output capability and efficiency. Because of their excellent current-handling capability, bipolar transistors are the preferred devices for use in output stages. Although parasitic bipolar transistors can be used in some CMOS output stages, output stages in CMOS technologies are usually constructed without bipolar transistors and are also described in this chapter.

~UP:-

_I__..1_---

5.2 The Emitter Follower as an Output Stage An emitter-follower output stage is shown in Fig. 5.1. To simplify the analysis, positive and negative bias supplies of equal magnitude Vcc are assumed, although these supplies may have different values in practice. When output voltage V, is zero, output current I, is also zero. The emitter-follower output device Ql is biased to a quiescent current IQ by current source Q2.The output stage is driven by voltage V i ,which has a quiescent dc value of Vbel for V . = 0 V. The bias components RI, Rg,and Q3 can be those used to bias other stages in the circuit. Since the quiescent current IQin Q2 will usually be larger than the reference current IR,resistor R2 is usually smaller than R I to accommodate this difference. This circuit topology can also be implemented in CMOS technologies using an MOS current source for bias and the parasitic bipolar-transistor emitter follower available in standard CMOS processes. Because any large current flow to the substrate can initiate the pnpn latch-up phenomenon described in Chapter 2, however, this configuration should be used carefully in CMOS technologies with lightly doped substrates. Extensive substrate taps in the vicinity of the emitter follower are essential to collect the substrate current flow. 5.2.1 Transfer Characteristicsof the Emitter-Follower

The circuit of Fig. 5.1 must handle large signal amplitudes; that is, the current and voltage swings resulting from the presence of signals may be a large fraction of the bias values. As a result, the small-signal analyses that have been used extensively up to this point

5.2 The Emitter Follower as an Output Stage

345

I0

4

-

-"cc

Figure 5.1 Emitter-follower output stage with current-mirrorbias.

must be used with care in this situation. For this reason, we first determine the dc transfer characteristic of the emitter follower. This characteristic allows calculation of the gain of the circuit and also gives important information on the linearity and thus on the distortion performance of the stage. Consider the circuit of Fig. 5.1. The large-signal transfer characteristic can be derived as follows:

In this case, the base-emitter voltage Vbel of Ql cannot be assumed constant but must be expressed in terms of the collector current IC1of Ql and the saturation current Is. If the load resistance RL is small compared with the output resistance of the transistors,

if Ql is in the forward-active region. Also

if Q2 is in the forward-active region and (5.2) in (5.1) gives

PF is assumed large. Substitution of (5.3) and

Equation 5.4 is a nonlinear equation relating V, and V iif both Ql and Q2 are in the forwardactive region. The transfer characteristic from (5.4) has been plotted in Fig. 5.2. First, consider the case where RL is large, which is labeled RL1.In this case, the first term on the right-hand side of (5.4), which represents the base-emitter voltage Vbel of Ql, is almost constant as V, changes. This result stems from the observation that the current in the load is small for a large RL;therefore, the current in Q1 and Vbel are both almost constant as V, changes in this case. As a result, the center part of the transfer characteristic for RL = RL1is nearly

346 Chapter 5

Output Stages

Figure 5.2 Transfer characteristic of the circuit of Fig. 5.1 for a low (RL2)and a high ( R L 1value ) of load resistance.

a straight line with unity slope that is offset on the Vi axis by VBEl,the quiescent value of Vbel. This near-linear region depends on both Ql and Q2 being in the forward-active region. However, as Vi is made large positive or negative, one of these devices saturates and the transfer characteristic abruptly changes slope. Consider Vi made large and positive. Output voltage V, follows Vi until V, = Vcc VCEl(sat)at which point Ql saturates. The collector-base junction of Ql is then forward biased and large currents flow from base to collector. In practice, the transistor base resistance (and any source resistance present) limit the current in the forward-biased collectorbase junction and prevent the voltage at the internal transistor base from rising appreciably higher. Further increases in Vi thus produce little change in V, and the characteristic flattens out, as shown in Fig. 5.2. The value of V irequired to cause this behavior is slightly larger than the supply voltage because Vbel is larger than the saturation voltage VCE(sat). Consequently, the preceding stage often limits the maximum positive output voltage in a practical circuit because a voltage larger than Vcc usually cannot be generated at the base of the output stage. (The portion of the curve for V ilarge positive where Ql is saturated actually has a positive slope if the effect of the collector series resistance r, of Q1 is included. In any event, this portion of the transfer characteristic must be avoided, because the saturation of Qlresults in large nonlinearity and a major reduction of power gain.) Now consider Vimade large and negative. The output voltage follows the input until V, = -Vcc + VCE2(sat), at which point Q2 saturates. (The voltage drop across R2 is assumed small and is neglected. It could be lumped in with the saturation voltage VCE2(sat) of Q2 if necessary.) When Q2 saturates, another discontinuity in the transfer curve occurs, and the slope abruptly decreases. For acceptable distortion performance in the circuit, the voltage swing must be limited to the region between these two break points. As mentioned above, the driver stage supplying Vi usually cannot produce values of Vi that have a magnitude exceeding Vcc (if it is connected to the same supply voltages) and the driver itself then sets the upper limit. Next consider the case where RL in Fig. 5.1 has a relatively small value. Then when V . is made large and negative, the first term in (5.4) can become large. In particular, this term approaches minus infinity when V, approaches the critical value

5.2 The Emitter Follower as a n Output Stage

347

In this situation, the current drawn from the load (- V,IRL) is equal to the current IQ, and device Ql cuts off, leaving Q2 to draw the current IQfrom the load. Further decreases in V iproduce no change in V,, and the transfer characteristic is the one labeled RL2 in Fig. 5.2. The transfer characteristic for positive Vi is similar for both cases. For the case RL = RL2,the stage will produce severe waveform distortion if Vi is a sinusoid with amplitude exceeding IQRL2.Consider the two sinusoidal waveforms in Fig. 5.3a. Waveform @has an amplitude V1 IQRU and waveform @ has an amplitude V2 > IQRL2.If these signals are applied as inputs at Vi in Fig. 5.1 (together with a bias voltage), the output waveforms that result are as shown in Fig. 5.3b for RL = RL2.For the smaller input signal, the circuit acts as a near-linear amplifier and the output is near sinusoidal. The output waveform distortion, which is apparent for the larger input, is termed "clipping" and must be avoided in normal operation of the circuit as a linear output stage. For a given IQand RL, the onset of clipping limits the maximum signal that can be ham dled. Note that if IQRLis larger than Vcc, the situation shown for RL = RL1in Fig. 5.2 holds, and the output voltage can swing almost to the positive and negative supply voltages before excessive distortion occurs. 5.2.2 Power Output and Efficiency

Further insight into the operation of the circuit of Fig. 5.1 can be obtained from Fig. 5.4 where three different load lines are drawn on the I, - V,, characteristics of Ql. The equation for the load lines can be written from Fig. 5. l and is

Figure 5.3 (a)ac input signals applied to the circuit of Fig. 5.1. (b) ac output waveforms corresponding to the inputs in (a)with RL = R L ~ .

348

Chapter 5

Output Stages

Curves of constant V ,,,

l

I I

VCEI

(sat)

'cc

Figure 5.4 Load lines in the I,I

+ IQ

-

Maximum possible value of V,,,

V,,1 plane for emitter follower Ql of Fig. 5.1

when both Ql and Q2 are in the forward-active region. The values of V,,, and ZC1 are related by (5.6) for any value of Vi and the line includes the quiescent point Q, where IC1= IQand VCe1= Vcc. Equation 5.6 is plotted in Fig. 5.4 for load resistances RLl,RL2, and RL3 and the device operating point moves up and down these lines as Vi varies. As Vi increases and VCe1decreases, Ql eventually saturates, as was illustrated in Fig. 5.2. As Vi decreases and VCe1 increases, there are two possibilities as described above. If RL is large (RL1), V. decreases and VCe1increases until Q2 saturates. Thus the maximum possible value that VCe1can attain is [2Vcc - VCE2(sat)] and this value is marked on Fig. 5.4. However, if RL is small (RL2),the maximum negative value of V, as illustrated in Fig. 5.2 is -IQRL2 and the maximum possible value of VCe1is (Vcc + IQRL2). Thus far no mention has been made of the maximum voltage limitations of the output stage. As described in Chapter 1, avalanche breakdown of a bipolar transistor occurs for V,, = BVcEo in the common-emitter configuration, which is the worst case for breakdown voltage. In a conservative design, the value of V,, in the circuit of Fig. 5.1 should always be less than BVcEo by an appropriate safety margin. In the preceding analysis, the maximum value that VCe1can attain in this circuit for any load resistance was calculated as approximately 2Vcc, and thus BVcEo must be greater than this value. Consider now the power relationships in the circuit. When sinusoidal signals are present, the power dissipated in various elements varies with time. We are concerned both with the instantaneous power dissipated and with the average power dissipated. Instantaneous power is important when considering transistor dissipation with low-frequency or dc signals. The junction temperature of the transistor will tend to rise and fall with the instantaneous power dissipated in the device, limiting the maximum allowable instantaneous power dissipation for safe operation of any device. Average power levels are important because the power delivered to a load is usually specified as an average value. Also note that if an output stage handles only high-frequency

5.2 The Emitter Follower as an Output Stage

349

signals, the transistor junction temperature will not vary appreciably over a cycle and the average device power dissipation will then be the limiting quantity. Consider the output signal power that can be delivered to load RL when a sinusoidal input is applied at Vi. Assuming that V , is approximately sinusoidal, the average output power delivered to RL is

where POand I^, are the amplitudes (zero to peak) of the output sinusoidal voltage and current. As described previously, the maximum output signal amplitude that can be attained before clipping occurs depends on the value of RL. If PLIma,is the maximum value of PL that can be attained before clipping occurs with sinusoidal signals, then

, and I",, are the maximum values of 13, and tothat can be attained before where Q clipping. Consider the case of the large load resistance, RLl. Figures 5.2 and 5.4 show that clipping occurs symmetrically in this case, and we have assuming equal saturation voltages in Qland Q 2 The corresponding sinusoidal output 1 . maximum average power that can be delivered current amplitude is to,= V o m / ~ LThe to RL1is calculated by substituting these values in (5.7a). This value of power can be interpreted geometrically as the area of the triangle A in Fig. 5.4 since the base of the triangle As RLl is increased, the maximum average output power equals Q,, and its height is tom. that can be delivered diminishes because the triangle becomes smaller. The maximum output voltage amplitude remains essentially the same but the current amplitude decreases as RLl increases. If RL = RL2 in Fig. 5.4, the maximum output voltage swing before clipping occurs is The corresponding current amplitude is fo, = IQ. Using (5.7a), the maximum average that can be delivered is given by the area of triangle B, shown in output power PLJmax Fig. 5.4. As RL2is decreased, the maximum average power that can be delivered is diminished. An examination of Fig. 5.4 shows that the power-output capability of the stage is maximized for RL = RL3,which can be calculated from (5.6) and Fig. 5.4 as

This load line gives the triangle of largest area ( C ) and thus the largest average output power. In this case, Q,, = [Vcc - VcE(sat)] and G, = IQ. Using (5.7a), we have

To calculate the efJiciency of the circuit, the power drawn from the supply voltages must now be calculated. The current drawn from the positive supply is the collector current of Ql, which is assumed sinusoidal with an average value IQ. The current flowing in the negative supply is constant and equal to IQ (neglecting bias current IR). Since the supply voltages are constant, the average power drawn from the supplies is constant and independent of the presence of sinusoidal signals in the circuit. The total power drawn

350

Chapter 5

Output Stages

from the two supplies is thus The power conversion eficiency (qc) of the circuit at an arbitrary output power level is defined as the ratio of the average power delivered to the load to the average power drawn from the supplies.

Since the power drawn from the supplies is constant in this circuit, the efficiency increases as the output power increases. Also, since the previous analysis shows that the poweroutput capability of the circuit depends on the value of RL, the efficiency also depends on RL. The best efficiency occurs for RL = RL3 since this value gives maximum average = Q,, then substitution of (5.11) and (5.12) in (5.13) power output. If RL = RL3 and gives for the maximum possible efficiency

v,

Thus if 0, Q2 is off with a reverse bias of VBE(On)across its base-emitter junction. As Vi and is made even more positive, QIeventually saturates (for Vi = Vcc + Vbel- VCEl(sal)), the characteristic flattens out as for the conventional emitter follower considered earlier. As V iis taken negative from Vi = 0, a similar characteristic is obtained except that Q2 now acts as an emitter follower for Vi more negative than -VBE(on).In this region, Ql is held in the off condition with a reverse bias of VBE(on)across its base-emitter junction. The characteristic of Fig. 5.11 shows a notch (or deadband) of 2VBE(on)in Vi centered around V i = 0. This deadband is common in Class B output stages and gives rise to crossover distortion, which is illustrated in Fig. 5.12, where the output waveforms from the circuit are shown for various amplitude input sinusoidal signals. In this circuit, the distortion is high for small input signals with amplitudes somewhat larger than vBE(on).

Q,saturates

I I I I

["CC + 'be1

-V

~ (sat)] ~ l

I I I

I

V~~(on) Q2 saturates

-vcc

+ /v~~2(sat)l

Figure 5.1 1 Transfer characteristic of the Class B output stage of Fig. 5.10.

364

Chapter 5

Output Stages

Figure 5.12 Output waveforms for various amplitude input signals applied to the Class B circuit of Fig. 5.10.

The effect of this source of distortion diminishes as the input signal becomes larger and the deadband represents a smaller fraction of the signal amplitude. Eventually, for very large signals, saturation of Ql and Q2 occurs and distortion rises sharply again due to clipping. This behavior is characteristic of Class B output stages and is why distortion figures are often quoted for both low and high output power operation. The crossover distortion described above can be reduced by using Class AB operation of the circuit. In this scheme, the active devices are biased so that each conducts a small quiescent current for V i = 0. Such biasing can be achieved as shown in Fig. 5.13, where the current source IQ forces bias current in diodes Q3 and Q4. Since the diodes are connected in parallel with the base-emitter junctions of Ql and Q2, the output transistors are biased on with a current that is dependent on the area ratios of Q,, Q2,Q3, and Q4. A

Figure 5.13 Class AB output stage. The diodes reduce crossover distortion.

5.4 Class B Push-Pull Output Stage

365

Figure S. 14 Transfer characteristic of the circuit of Fig. 5.13.

typical transfer characteristic for this circuit is shown in Fig. 5.14, and the deadband has been effectively eliminated. The remaining nonlinearities due to crossover in conduction from Ql to Q2 can be reduced by using negative feedback, as described in Chapter 8. The operation of the circuit in Fig. 5.13 is quite similar to that of Fig. 5.11. As V i is taken negative from its quiescent value, emitter follower Q2 forces V, to follow. The load current flows through Q2, whose base-emitter voltage will increase slightly. Since the diodes maintain a constant total bias voltage across the base-emitter junctions of Ql and Q2,the base-emitter voltage of Ql will decrease by the same amount that Q2 increased. Thus during the negative output voltage excursion, Ql stays on but conducts little current and plays no part in delivering output power. For Vi taken positive, the opposite occurs, and Ql acts as the emitter follower delivering current to RL with Q2 conducting only a very small current. In this case, the current source IQ supplies the base-current drive to Ql. In the derivation of the characteristics of Figures 5.11 and 5.14, we assumed that the magnitude of the input voltage Vi was unlimited. In the characteristic of Fig. 5.11, the magnitude of Vi required to cause saturation of Ql or Q2 exceeds the supply voltage VC-. However, as in the case of the single emitter follower described earlier, practical driver stages generally cannot produce values of Vi exceeding Vcc if they are connected to the same supply voltages as the output stage. For example, the current source IQ in Fig. 5.13 is usually realized with a pnp transistor and thus the voltage at the base of Ql cannot exceed (Vcc - VCE(sat)),at which point saturation of the current-source transistor occurs. Consequently, the positive and negative limits of V, where clipping occurs are generally somewhat less than shown in Fig. 5.11 and Fig. 5.14, and the limitation usually occurs in the driver stage. This point will be investigated further when practical output stages are considered in later sections. 5.4.2 Power Output and Efficiency of the Class B Stage

The method of operation of a Class B stage can be further appreciated by plotting the collector current waveforms in the two devices, as in Fig. 5.15, where crossover distortion is ignored. Note that each transistor conducts current to RL for half a cycle. The collector current waveforms of Fig. 5.15 also represent the waveforms of the current drawn from the two supplies. If the waveforms are assumed to be half-sinusoids, then the average current drawn from the + Vcc supply is

366

Chapter 5

Output Stages

Ct - -- -- -

-

- - -- - -

v,

-I,=--

RI.

for Figure a Class 5.15BVoltage output stage. and current (a) Input waveforms voltage. ( b ) Output voltage. (c) Q , collector current. (d) Q2 collector current.

where T is the period of the input signal. Also, Q, and are the zero-to-peak amplitudes of the output sinusoidal voltage and current. Since each supply delivers the same current magnitude, the total average power drawn from the two supplies is

where (5.66) has been substituted. Unlike in the Class A case, the average power drawn from the supplies does vary with signal level for a Class B stage, and is directly proportional to p,. The average power delivered to RL is given by

From the definition of circuit efficiency in (5.13),


367

where (5.67) and (5.68) have been substituted. Equation 5.69 shows that 7 for a Class B stage is independent of RL but increases linearly as the output voltage amplitude p, increases. can attain before clipping occurs with the characteristic The maximum value that of Fig. 5.14 is Q,, = (Vcc - VCE($at)) and thus the maximum average signal power that can be delivered to RL for sinusoidal signals can be calculated from (5.68) as

v.

From (5.69), the corresponding maximum efficiency is

If VcE(sat) is small compared with Vcc, the circuit has a maximum efficiency of 0.786 or 78.6 percent. This maximum efficiency is much higher than the value of 25 percent achieved in Class A circuits. In addition, the standby power dissipation is essentially zero in the Class B circuit. These advantages explain the widespread use of Class B and Class AB output stages. The load line for one device in a Class B stage is shown in Fig. 5.16. For values of V,, less than the quiescent value (which is Vcc), the load line has a slope of (- lIRL).For values of V,, greater than VC=,the load line lies along the V,, axis because the device under consideration turns off and the other device conducts. As a result, the V,, of the device under consideration increases while its collector current is zero. The maximum value of V,, is (2Vcc - VCE(sat)). AS in the case of a Class A stage, a geometrical interpretation of the average power PL delivered to RL can be obtained by noting that Pr = f i,P,, where toand Q, are the peak sinusoidal current and voltage delivered to RL.Thus PL is the area of the triangle in Fig. 5.16 between the V,, axis and the portion of the load line traversed by the operating point. Consider the instantaneous power dissipated in one device:

I

P = Ic V,, = constant

Quiescent point

-

I

I

sat)

vcc 2

vcc

Load line

-

. I

I I

vce

2 v ~ v~~ ~- ( s a t )

Figure 5.16 Load line for one device in a Class B stage.

368 Chapter 5

Output Stages

But VC,

=

V c c - ICRL


Differentiation of (5.74) shows that P, reaches a peak for

This peak lies on the load line midway between the I, and V,, axis intercepts and agrees with the result derived earlier for the Class A stage. As in that case, the load line in Fig. 5.16 is tangent to a power hyperbola at the point of peak dissipation. Thus, in a Class B stage, maximum instantaneous device dissipation occurs for an output voltage equal to about half the maximum swing. Since the quiescent device power dissipation is zero, the operating temperature of a Class B device always increases when nonzero signal is applied. The instantaneous device power dissipation as a function of time is shown in Fig. 5.17, where collector current, collector-emitter voltage, and their product are displayed for one device in a Class B stage at maximum output. (Crossover distortion is ignored, and VCE(sat)= 0 is assumed.) When the device conducts, the power dissipation varies at twice the signal frequency. The device power dissipation is zero for the half cycle when the device is cut off. For an open-circuited load, the load line in Fig. 5.16 lies along the V,, axis and the device has zero dissipation. As in the case of Class A stage, the load line in Fig. 5.16 becomes vertical through the quiescent point for a short-circuited load, and the

lc'

Figure 5.17 Waveforms at maximum output for one device in a Class B stage. ( a )Collector current waveform. (b) Collector voltage waveform. ( c ) Collector power dissipation waveform.


369

instantaneous device power dissipation can then become excessive. Methods of protection against such a possibility are described in Section 5.4.6. EXAMPLE

A Class B stage of the type shown in Fig. 5.10 drives a load RL = 500 0. If the positive and negative supplies have magnitudes of 15 V, calculate the maximum average power that is delivered to RL for to= 14.4 V, the corresponding efficiency, and the maximum instantaneous device dissipation. Assume that V, is sinusoidal. From (5.66), the average of supply current is

Use of (5.67) gives the average power drawn from the supplies as

From (5.68), the average power delivered to RL is

From (5.13), the corresponding efficiency is qc

P~

-

207 ~275

= --- - - = P s u ~ ~ l

75.3 percent

This result is close to the theoretical maximum of 78.6 percent. From (5.75), the maximum instantaneous device power dissipation occurs when

The corresponding value of V,, is Vcc/2 device dissipation is

=

7.5 V and thus the maximum instantaneous

By conservation of power, the average power dissipated per device is P,,

=

1 1 -(Psupply- PL)= -(275 2 2

- 207) mW =

34 mW

5.4.3 Practical Realizations of Class B Complementary Output Stages6 The practical aspects of Class B output-stage design will now be illustrated by considering two examples. One of the simplest realizations is the output stage of the 709 op amp, and a simplified schematic of this is shown in Fig. 5.18. Transistor Q3acts as a common-emitter driver stage for output devices Ql and Q2. The transfer characteristic of this stage can be calculated as follows. In the quiescent condition, V, = 0 and V1 = 0. Since Q1 and Q2 are then off, there is no base current in these devices. Therefore, for Vcc = 10 V, the bias current in Q3 is

370

Chapter 5

D

Output Stages

Figure 5.18 Simplified schematic of the output stage of the 709 op amp.

-Vcc

The limiting values that V, can take are determined by the driver stage. When V iis taken large positive, V1 decreases until Q3 saturates, at which point the negative voltage limit V ; is reached: (5.76) V, = -VCC + VCE3(sat) - Vbe2 For values of V1 between (- Vcc + VCE3(sat)) and (- VBE(on)), both Q3 and Q2 are in the forward-active region, and V, follows V1 with Q2 acting as an emitter follower. As Vi is taken negative, the current in Q3 decreases and V1 rises, turning Ql on. The positive voltage limit V: is reached when Q3 cuts off and the base of Ql is simply fed from the positive supply via RI. Then

where PF1is the current gain of Ql. Thus 17s

Substituting (5.78) in (5.77) and rearranging gives

For RL

=

10 k a and PF1 = 100, (5.79) gives

In this case, the limit on V, is similar for positive and negative swings. However, if RL = 1 ki2 and PF1 = 100, (5.79) gives For this lower value of RL, the maximum positive value of V, is reduced, and clipping on a sine wave occurs first for V, going positive.


371

"0

Volts

Vi Volts

Figure 5.19 SPICE-generated transfer characteristic for the circuit of Fig. 5.18 with Vcc = 10 V and RL = 1 kfl and 10 kn.

Computer-generated transfer curves using SPICE for this circuit with Vcc = 10 V are shown in Fig. 5.19 for RL = 1 kfl and RL = 10 kQ. ( P F = 100 is assumed for all devices.) The reduced positive voltage capability for RL = 1 k.12 is apparent, as is the deadband present in the transfer characteristic. The curvature in the characteristic is due to the exponential nonlinearity of the driver Q3.In practice, the transfer characteristic may be even more nonlinear than shown in Fig. 5.19 because PF for the npn transistor Ql is generally larger than PF for the pnp transistor Q2, causing the positive and negative sections of the characteristic to differ significantly. This behavior can be seen by calculating the small-signal gain AVolAVi for positive and negative V,. In the actual 709 integrated circuit, negative feedback is applied around this output stage to reduce these nonlinearities in the transfer characteristic. A second example of a practical Class B output stage is shown Fig. 5.20, where SPICE-calculated bias currents are included. This circuit is a simplified schematic of the 741 op amp output circuitry. The output devices Q14and QZ0are biased to a collector current of about 0.17 mA by the diodes Q18 and QI9. The value of the bias current in Q14 and Q20 depends on the effective area ratio between diodes Q18 and QI9 and the output devices. (Qls and QI9 are implemented with transistors in practice.) The output stage is driven by lateral pnp emitter-follower Q23,which is driven by common-emitter stage Q17 biased to 0.68 rnA by current source Q13B. The diodes in Fig. 5.20 essentially eliminate crossover distortion in the circuit, which can be seen in the SPICE-generated transfer characteristic of Fig. 5.21. The linearity of this stage is further improved by the fact that the output devices are driven from a low resistance provided by the emitter follower Q23. Consequently, differences in PF between Q14 and QZ0produce little effect on the transfer characteristic because small-signal gain AVoIAV1 1 for any practical value of PF with either Q14 or Qzo conducting. The limits on the output voltage swing shown in Fig. 5.21 can be determined as follows. As Vi is taken positive, the voltage V1 at the base of Q23goes negative, and voltages V2 and V, follow with Q20 drawing current from RL.When Q17 saturates, the output

-

372 Chapter 5

Output Stages

(a)

-"cc

+v, .,

Figure 5.20 (a) Simplified

-vcc (b)

schematic of the 741 op amp output stage. (b) Schematic of the 741 output stage showing the detail of Q18and Q19.

voltage limit for negative excursions is reached at

This limit is about 1.4 V more positive than the negative supply. Thus V ; is limited by saturation in QI7, which is the stage preceding driver stage Q23. As V iis taken negative from its quiescent value (where V, = 0), voltage V1 rises and voltages V2 and V, follow with QI4delivering current to the load. The positive output


373

v0

Volts

v;

Volts

Figure 5.21 SPICE-generated transfer curve for the circuit of Fig. 5 . 2 0 ~with Vcc = 15 V and

Rr = 1 kR.

voltage limit V: is reached when current source

saturates and

This limit is about 0.8 V below the positive supply because VCE13A(sat) = -0.1 V for the pnp device. Thus V: is also limited by the driver stage. The power requirements of the driver circuits in a configuration such as shown in Fig. 5.20 require some consideration. The basic requirement of the driver is to supply sufficient drive to the output stage so that it can supply the desired power to RL. As V, is taken negative, Q23draws current from the base of Qzo with essentially no limit. In fact, the circuit must be protected in case of a short-circuited load. Otherwise in this case, a large input signal could cause QZ3and Q20to conduct such heavy currents that they burn out. As explained before, the negative voltage limit is reached when QI7saturates and can no longer drive the base of Q23 negative. As V, is taken positive (by V igoing negative and Vl going positive), Q23 conducts ~ base current to QI4.The maximum output current is less, and current source Q 1 3supplies limited by the current of 0.22 mA available for driving QI4.As V1, V2,and V, go positive, the current in QI4 increases, and the current in Q 1 3is~ progressively diverted to the base of Q14.The maximum possible output current delivered by Q14 is thus

374

Chapter 5

Output Stages

If DFI4 = 100, the maximum output current is 22 mA. The driver stage may thus limit the maximum positive current available from the output stage. However, this output current level is only reached if RL is small enough so that Q13,4 does not saturate on the positive voltage excursion. The stage preceding the driver in this circuit is QI7.AS mentioned above, the negative voltage limit of V, is reached when Q17 saturates. The bias current of 0.68 mA in Q17is much greater than the base current of Q23,and thus Q23 produces very little loading on Q17.Consequently, voltage V, at the base of (223can be driven to within VCE(sat)of either supply voltage with only a very small fractional change in the collector current of Q17. Finally, we will now examine the detail of the fabrication of diodes Q18and Q19in the 741. The actual circuit is shown in Fig. 5.20b with the output protection circuitry omitted. Diode Q19conducts only a current equal to the base current of Q18plus the bleed current in pinch resistor Rlo. Transistor Q18 thus conducts most of the bias current of current source Q13*. This arrangement is used for two reasons. First, the basic aim of achieving a voltage drop equal to two base-emitter voltages is achieved. Since Q18 and QI9 have common collectors, however, they can be placed in the same isolation region, reducing die area. Second, since Q19 conducts only a small current, the bias voltage produced by Q18 and Q19 across the bases of Q14 and Qzo is less than would result from a connection as shown in Fig. 5 . 2 0 ~This . observation is important because output transistors Q14and QZ0 generally have emitter areas larger than the standard device geometry (typically four times larger or more) so that they can maintain high PF while conducting large output currents. Thus in the circuit of Fig. 5.20a, the bias current in Q14and Q20 would be about four times the current in Q18and Q19,which would be excessive in a 741-type circuit. However, the circuit of Fig. 5.20b can be designed to bias Q14 and to a current comparable to the current in the diodes, even though the output devices have a large area. The basic reason for this result is that the small bias current in Q19in Fig. 5.20b gives it a smaller base-emitter voltage than for the same device in Fig. 5.20a, reducing the total bias voltage between the bases of Q14 and Qzo. The results described above can be illustrated quantitatively by calculating the bias currents in QI4and QZ0of Fig. 5.20b. From KVL, and thus

If we assume that the circuit is biased for V, then llC141 = llC201 and (5.82) becomes

=

0 V and also that PF14>> 1 and P F 2 > ~> 1,

from which

Equation 5.83 may be used to calculate the output bias current in circuits of the type shown in Fig. 5.20b. The output-stage bias current from (5.83) is proportional to and For this specific example, the collector current in QI9 is approximately equal to the current in Rlo if PF is large and thus

G.

5.4 Class B Push-PullOutput Stage

375

If the base currents of QI4 and QZ0 are neglected, the collector current of Qlg is To calculate the output-stage bias currents from (5.83), values for the various reverse saturation currents are required. These values depend on the particular IC process used, but typical values are IS18= Isl9 = 2 X 1 0 - l ~ A, IS14= 41S18= 8 X 10-'S A, and 1S20 = 4 X 10-l5 A. Substitution of these data in (5.83) gives IC14 = -IC20 = 0.16 mA.

EXAMPLE For the output stage of Fig. 5.20a, calculate bias currents in all devices for V, = + 10 V. Assume that Vcc = 15 V, RL = 2 kfl, and PF = 100. For simplicity, assume all devices have equal area and for each device

Assuming that Q14supplies the load current for positive output voltages, we have

Substitution in (5.84) and rearranging gives

Also

Thus

-

ICl9 Icls = -Ic23= (0.22 - 0.05) mA

=

0.17 rnA

Substitution in (5.84) and rearranging gives

Thus Vbe20 =

-(Vbel9

+ Vbel8

-

Vbel4)

=

-525 mV

Use of (5.84) gives Iczo= -5.9 p A

and the collector current in Q20 is quite small as predicted. Finally

376

Chapter 5

B

Output Stages

5.4.4 All-npn Class B Output Stage71819

The Class B circuits described above are adequate for many integrated-circuit applications where the output power to be delivered to the load is of the order of several hundred milliwatts or less. However, if output-power levels of several watts or more are required, these circuits are inadequate because the substrate pnp transistors used in the output stage have a limited current-carrying capability. This limit stems from the fact that the doping levels in the emitter, base, and collector of these devices are not optimized for pnp structures because the npn devices in the circuit have conflicting requirements. A circuit design that uses high-power npn transistors in both halves of a Class B configuration is shown in Fig. 5.22. In this circuit, common-emitter transistor Ql delivers power to the load during the negative half-cycle, and emitter follower Q2 delivers power during the positive half-cycle. To examine the operation of this circuit, consider Vitaken negative from its quiescent value so that Q lis off and Zc1 = 0. Then diodes D 1and D2must both be off and all of the collector current of Q3is delivered to the base of Q2. The output voltage then has its maximum positive value V:. If RL is big enough, Q3 saturates and

To attain this maximum positive value, transistor Q3must saturate in this extreme condition. In contrast, Q2 in this circuit cannot saturate because the collector of Q2 is connected to the positive supply and the base voltage of Q2 cannot exceed the positive supply voltage. The condition for Q3 to be saturated is that the nominal collector bias current IQ3 in Q3(when Q3is not saturated) should be larger than the required base current of Q2when V, = V:. Thus we require

Since Q2supplies the current to RL for V . > 0, we have

11

v2

,l

JLDl

I D 2

v1

-

+L

Vi -

Figure 5.22 All-npn Class B output -Vcc

stage.


377

Substitution of (5.87) and (5.85) in (5.86) gives the requirement on the bias current of Q3 as

Equation 5.88 also applies to the circuit of Fig. 5 . 2 0 ~ It . gives limits on Ic3, PZ,and RL for V , to be able to swing close to the positive supply. If IQ3 is less than the value given by (5.88), V , will begin clipping at a positive value less than that given by (5.85) and Q 3 will never saturate. Now consider V imade positive to turn Q, on and produce nonzero I,,. Since the base of Q2 is more positive than its emitter, diode DI will turn on in preference to D2, which will be off with zero volts across its junction. The current IC1will flow through D1 and will be drawn from Q3, which is assumed saturated at first. As I,, increases, Q3 will eventually come out of saturation, and voltage V2 at the base of Q2 will then be pulled down. Since Q2 acts as an emitter follower, V, will follow V2 down. This behavior occurs during the positive half of the cycle, and Ql acts as a driver with Q2 as the output device. When V , is reduced to 0 V, the load current is zero and I,. = 0. This point corresponds to Zc1 = (IC3(, and all of the bias current in Q3 passes through D1 to Ql. If lC1 is increased further, V , stays constant at 0 V while V 2is reduced to 0 V also. Therefore, V 1is negative by an amount equal to the diode voltage drop of D1, and thus power diode D2 turns on. Since the current in D1 is essentially fixed by Q3,further increases in l,, cause increasing current to flow through D2. The negative half of the cycle consists of Ql acting as the output device and feeding RL through D2. The maximum negative voltage occurs when Ql saturates and is

where Vd2is the forward voltage drop across D2. The sequence just described gives rise to a highly nonlinear transfer characteristic, as shown in Fig. 5.23, where V , is plotted as a function of Icl for convenience. When V, is

Figure 5.23 Transfer characteristic of the circuit of Fig. 5.22 from I,, to V,.

378 Chapter 5

a

Output Stages

positive, the current IC1 feeds into the base of Q2 and the small-signal gain is

where the impedance of D1 is assumed negligible. That is, the impedance at the base of Q2 is equal to the parallel combination of the output resistances of Qland Q3 and the input resistance of emitter follower Q2. When V, in Fig. 5.22 is negative, ZC1 feeds RL directly and the small-signal gain is

where the impedance of D2 is assumed negligible. Note the small deadband in Fig. 5.23 where diode D2 turns on. This deadband can be eliminated by adding a second diode in series with D 1 .In practice, negative feedbackmust be used around this circuit to linearize the transfer characteristic, and such feedback will reduce any crossover effects. The transfer characteristic of the circuit from Vi to V, is even more nonlinear than shown in Fig. 5.23 because it includes the exponential nonlinearity of Ql . In integrated-circuit fabrication of the circuit of Fig. 5.22, devices Ql and Q2 are identical large-power transistors. In high-power circuits (delivering several watts or more), they may occupy 50 percent of the whole die. Diode D2 is a large-power diode that also occupies considerable area. These features are illustrated in Fig. 5.24, which is a die photo of the 791 high-power op amp. This circuit can dissipate l 0 W of power and can deliver 15 W of output power into an 8 - 0 load. The large power transistors in the output stage can be seen on the right-hand side of the die. Finally, the power and efficiency results derived previously for the complementary Class B stage apply equally to the all-npn Class B stage if allowance is made for the voltage drop in D2. Thus the ideal maximum efficiency is 79 percent.

Figure 5.24 Die photo of the 791 high-power op amp.


379

5.4.5 Quasi-Complementary Output Stageslo The all-npn stage described above is one solution to the problem of the limited powerhandling capability of the substrate pnp. Another solution is shown in Fig. 5.25, where a composite pnp has been made from a lateral p n p Q3 and a high-power npn transistor Q4. This circuit is called a quasi-complementary output stage. The operation of the circuit of Fig. 5.25 is almost identical to that of Fig. 5.20. The pair Q3-Q4is equivalent to a p n p transistor as shown in Fig. 5.26, and the collector current of Q3 is

The composite collector current Ic is the emitter current of Q4, which is

The composite device thus shows the standard relationship between Zc and VBEfor a p n p transistor. However, most of the current is carried by the high-power npn transistor. Note VC, Qa 11

4l

Q2

I t Q6 !L

Q5

+0

v, -

B0

Figure 5.25 Quasi-complementary Class B output stage.

-t

\ [c3

Q4

C

the composite connection and a p n p transistor.

380 Chapter 5

Output Stages

that the magnitude of the saturation voltage of the composite device is ( I v ~ ~+~VBE4). ( ~ ~ ~ ) ~ This magnitude is higher than normal because saturation occurs when Q3 saturates, and VBE4 must be added to this voltage. The major problem with the configuration of Fig. 5.25 is potential instability of the local feedback loop formed by Q3 and Q4,particularly with capacitive loads on the amplifier. The stability of feedback loops is considered in Chapter 9. The quasi-complementary Class B stage can also be effectively implemented in BiCMOS technology. In the circuit of Fig. 5.25, the compound bipolar device Q3-Q4can be replaced by the MOS-bipolar combination" of Fig. 5.27, where Q4 is a large-area high-current bipolar device. The overall transfer characteristic is

Equation 5.92 shows that the composite PMOS device appears to have a WIL ratio (PF4 1) times larger than the physical PMOS device M3. With this circuit, one of the diodes Q5 or Q6 in Fig. 5.25 would now be replaced by a diode-connected PMOS transistor to set up a temperature-stable standby current in the output stage. A bias bleed resistor can be connected from the base to the emitter of Q4 to optimize the bias current in M3 and to speed up the turn-off of Q4 in high-frequency applications by allowing reverse base current to remove the base charge. Such a resistor can also be connected from the base to the emitter of Q4 in Fig. 5.25.

+

5.4.6 Overload Protection The most common type of overload protection in integrated-circuit output stages is shortcircuit current protection. As an example, consider the 741 output stage shown in Fig. 5.28 with partial short-circuit protection included. Initially assume that R6 = 0 and ignore Q15. The maximum positive drive delivered to the output stage occurs for Vi large positive. If RL = 0 then V, is held at zero volts and V, in Fig. 5.28 is equal to Vbe14.Thus, as Vi is taken positive, QI8, and QI9will cut off and all of the current of Q I 3is~fed to QI4. If this is a high-PF device, then the output current can become destructively large:

then IcI4= 500 X 0.22 = 110 mA

D

Figure 5.27 Compound highcurrent PMOS connection.

5.4 Class B push-Pull Output Stage

'lASo

381

Q I ~ A

Figure 5.28 Schematic of the 741 op amp

-vcc

If Vcc

=

showing partial short-circuit protection.

15 V, this current level gives a power dissipation in QI4 of

which is sufficient to destroy the device. Thus the current under short-circuit conditions must be limited, and this objective is achieved using R6 and Q15for positive V,. The short-circuit protection operates by sensing the output current with resistor R6 of about 25 C l . The voltage developed across R6 is the base-emitter voltage of Q15, which is normally off. When the current through R6 reaches about 20 mA (the maximum safe level), QI5begins to conduct appreciably and diverts any further drive away from the base of Q14.The drive current is thus harmlessly passed to the output instead of being multiplied by the PF of Q14. The operation of this circuit can be seen by calculating the transfer characteristic of QI4 when driving a short-circuit load. This can be done using Fig. 5.29.

Also

From (5.94)

But

382

Chapter 5 m Output Stages

Figure 5.29 Equivalent circuit for the calculation of the effect of &l5 on the transfer characteristic of QI4in Fig. 5.28 when RL = 0.

Substitution of (5.95) and (5.96) in (5.97) gives

The second term on the left side of (5.98) stems from QI5. If this term is negligible, then Ic14 = PF141ias expected. The transfer characteristic of the stage is plotted from (5.98) in Fig. 5.30, using PF14 = 500, IS15 = 10-l4 A, and R = 25 Cl. For a maximum drive of Ii = 0.22 mA, the value of IcI4is effectively limited to 24 rnA. For values of ICl4 below 20 mA, QI5 has little effect on circuit operation. Similar protection for negative output voltages in Fig. 5.29 is achieved by sensing the voltage across R7 and diverting the base drive away from one of the preceding stages.

5.5 CMOS Class AB Output Stages The classical Class AB topology of Fig. 5.13 can also be implemented in standard CMOS technology. However, the output swing of the resulting circuit is usually much worse than in the bipolar case. Although the swing can be improved using a common-source configuration, this circuit suffers from poor control of the quiescent current in the output devices. These issues are described below.

/

/ 1

/

/

,I' No protection / [cl 4 = PFI4It

40 -

a 30-

/

I I / / I

E

I

I

I

With protection

I

I

I

I

I

0.1

I

I

0.2 I;(mA)

I

Figure 5.30 Transfer characteristic of the circuit of Fig. 5.29 with and without protection transistor Ql5 (&4 = 500).

5.5 CMOS Class AB Output Stages

383

5.5.1 Common-Drain Configuration

Figure 5.3 1 shows the common-drain class-AB output configuration. From KVL, Ignoring the body effect, VSG5 + VGS4 is constant if the bias current from Mg is constant. Under these conditions, increasing VgS1decreases Vsg2and vice versa. For simplicity, assume at first that a short circuit is connected from the drain of M4 to the drain of Ms. Then VsG5 + VGS4 = 0 and V,,, = Vgs2 from (5.99). For M 1 to conduct nonzero drain current, VgS1 > V,, is required. Similarly, Vgs2 < Vt2 is required for M2 to conduct nonzero drain current. With standard enhancement-mode devices, Vtl > 0 and Vt2 < 0. Therefore, M 1and M 2do not both conduct simultaneously under these conditions, which is a characteristic of a Class-B output stage. When V, > 0, M1 operates as a source follower and M 2 is off. Similarly, M2 operates as a source follower and M1 is off when v, < 0. In Fig. 5.3 1, however, VSG5+ VGS4 0 and both M 1 and M2 are biased to conduct nonzero drain current when V, = 0, which is a characteristic of a Class-AB output stage. If Vtl = Vt4 and Vt2 = Vr5, using (1.157) in (5.99) with ID5 = - ID4 gives

If V,

=

0, then Id2

=

-Id

l

and (5.100) can be rearranged to give

where I D 1 = Idl with V, = 0. The key point of this equation is that the quiescent current in the output transistors is well controlled with respect to the bias current that flows in the diode-connected transistors, as in the bipolar case.

1

-

+ss

Figure 5.31 Complementary sourcefollower CMOS output stage based on traditional bipolar implementation.

384 Chapter 5

Output Stages

An important problem with this circuit is that its output swing can be much less than the corresponding bipolar circuit with equal supply voltages. For V, > 0, Vgsl > Vtl and M1 acts as a source follower. Therefore,

I = lVGS3- Vr31. The minimum Vsd3 required to operate M3 as a current source is [Vov3 From (5.102), the maximum output voltage V: is The minimum output voltage can be found by similar reasoning. (See Problem 5.21.) Although (5.103) appears to be quite similar to (5.81) if Vcc in Fig. 5.20 is equal to VDDin Fig. 5.3 l , the limit in (5.103) is usually much less than in (5.81) for three reasons. First, the gate-source voltage includes a threshold component that is absent in the base-emitter voltage. Second, the body effect increases the threshold voltage Vtl as V, increases. Finally, the overdrive part of the gate-source voltage rises more steeply with increasing current than the entire base-emitter voltage because the overdrive is proportional to the square root of the current and the base-emitter voltage is proportional to the logarithm of the current. In practice, the output voltage swing can be increased by increasing the WIL ratios of the output devices to reduce their overdrives. However, the required transistor sizes are sometimes so large that the parasitic capacitances associated with the output devices can dominate the overall performance at high frequencies. Thus the circuit of Fig. 5.3 1 is generally limited to much smaller currents than its bipolar equivalent. W

EXAMPLE An output stage such as shown in Fig. 5.31 is required to produce a maximum output voltage of 0.7 V with RL = 35 0 and VDD = Vss = 1.5 V. Using the transistor parameters in Table 2.4, find the required WIL of M1. Assume IVov31= 100 mV, and ignore the body effect. From (5.103),

Since Table 2.4 gives Vrl

=

0.6 V,

With V, = 0.7 V, the current in the load is (0.7 V)l(35 a) = 20 rnA. If Id2= 0 under these conditions, Idl = 20 mA. Rearranging (1.157) gives

rn

which is a very large transistor. 5.5.2 Common-Source Configuration with Error Amplifiers Another alternative is the use of quasi-complementary configurations. In this case, a common-source transistor together with an error amplifier replaces an output sourcefollower device. A circuit with this substitution for both output transistors is shown conceptually in Fig. 5.32.l2>l37l4 The combination of the error amplifier and the common-source


Error amplifier

-

VDD

\

Error amplifier

385

-vs5

Figure 5.32 A complementary Class AB output stage using embedded common-source output devices.

device mimics the behavior of a source follower with high dc transconductance. The function of the amplifiers is to sense the voltage difference between the input and the output of the stage and drive the gates of the output transistors so as to make the difference as small as possible. This operation can be viewed as negative feedback. A key advantage of the use of negative feedback here is that it reduces the output resistance. Since negative feedback is covered in Chapter 8, we will analyze this structure with straightforward circuit analysis. To find the output resistance, consider the small-signal model of this output stage shown in Fig. 5.33. The current i, is

Rearranging this equation to solve for vJit gives

This equation shows that increasing the gain A of the error amplifiers reduces R, and that R, is much less than the drain-source resistance of M 1 or M:! because of the negative feedback. To find the transfer characteristic, consider the dc model of the output stage shown in Fig. 5.34. The model includes the input-referred offset voltages of the error amplifiers as

Figure 5.33 Small-signal model of the output stage in Fig. 5.32 used to find R,.

386

Chapter 5

Output Stages

Figure 5.34 A dc model of the output stage in Fig. 5.32 used to find the transfer characteristic.

voltage sources. Assume kb(WIL)l = k;(WIL)2 = kf(WIL) and -Vt1 = Vt2 = Vt. Also assume that the error amplifiers are designed so that -ID1 = ID2 = IQ when Vi = 0, Vosp = 0, and VosN = 0. Under these conditions, V, = 0 and

where

With nonzero input and offsets, the output may not be zero. As a result, the differential input to the top error amplifier changes from zero to V, - (Vi - VOSP). Similarly, the differential input to the bottom error amplifier changes from zero to V, - (Vi - VOSN). Assuming that the output of each error amplifier changes by its gain A times the change in its input,

If M 1and M 2 operate in the active region,

Also, I = -v0 O

RL

From KCL at the output, Substituting (5.110)-(5.114) into (5.11 5) and rearranging gives

(5.114)


387

where g, = kl(WIL)V,, as shown in (1.180). The term (2Ag, RL)is the gain around the feedback loop or the loop gain and is usually chosen to be high enough to make the slope of the transfer characteristic to be unity within an allowable gain error. (The concept of loop gain is described in Chapter 8.) The gain error here is approximately 1/(2Ag,RL). The key point is that the error is reduced if A, g,, or RL are increased. With nonzero offsets, (5.116) shows that the circuit also displays an offset error. If A(Vosp - VosN) > 1,

Therefore, the input offset voltage of the buffer is about -(VOSP + VOSN)/2. Equation 5.116 is valid as long as both M1 and M2 operate in the active region. If the magnitude of the output voltage is large enough, however, one of the two output transistors turns off. For example, when V iincreases, V, also increases but the gain is slightly less than unity. As a result, the differential inputs to the error amplifiers both I but reduce Id2, decrease, decreasing VgS1 and Vgs2.In turn, these changes increase /ld1 and M2 turns off for large enough V i . To find the portion of the transfer characteristic with M, in the active region but M 2 off, the above analysis can be repeated with Id2 = 0. See Problem 5.23. The primary motivation for using the quasi-complementary configuration is to increase the output swing. If the output transistors are not allowed to operate in the triode region, the output voltage can pull within an overdrive of either supply. This result is an improvement compared to the limit given in (5.103) for the common-drain output stage mostly because the threshold voltages of the output transistors do not limit the output swing in the common-source configuration. Although quasi-complementary circuits improve the output swing, they suffer from two main problems. First, the error amplifiers must have large bandwidth to prevent crossover distortion problems for high input frequencies. Unfortunately, increasing the bandwidth of the error amplifiers worsens the stability margins, especially in the presence of large capacitive loads. As a result, these circuits present difficult design problems in compensation. The topics of stability and compensation are covered in Chapter 9. Second, nonzero offset voltages in the error amplifiers change the quiescent current flowing in the output transistors. From a design standpoint, the quiescent current is chosen to be barely high enough to limit crossover distortion to an acceptable level. Although further increases in the quiescent current reduce the crossover distortion, such increases also increase the power dissipation and reduce the output swing. Therefore, proper control of the quiescent current with nonzero offsets is also a key design constraint. One way to control the quiescent current is to sense and feedback a copy of the current.12 This method is not considered further here. Another way to limit the variation in the quiescent current is to design the error amplifiers to have low gain.l3>l4The concept is that the quiescent current is controlled by the gate-source voltages on the output transistors,

388

Output Stages

Chapter 5

which in turn are controlled by the outputs of the error amplifiers. Therefore, reducing the error-amplifier gain reduces the variation of gate-source voltages and the quiescent current for a given v'ariation in the offset voltages. To study this situation quantitatively, define the quiescent current in the output devices as the common-mode component of the current flowing from VDD to - Vss with Vi = 0. Then

Subtraction is used in the above equation because the drain current of each transistor is defined as positive when it flows into the transistor. Substituting (5.110)-(5.113) into (5.119) gives

Since V,

=

0 if Vosp

From (5.118) with V i

=

=

VOSN = 0, (5.120) shows that

0,


Define AIQ as the change in IQ caused by nonzero offsets; that is,


To evaluate the magnitude of AIQ, we will compare it to the quiescent current with zero offsets by dividing (5.126) by (5.121). The result is


389

Therefore, to keep the fractional change in the quiescent current less than a given amount, the maximum error-amplifier gain is

For example, if V,, = 200 mV, Vosp - VOSN= 5 mV, and up to 20 percent variation in the quiescent current is allowed, (5.129) shows that the error amplifier gain should be less than about 8.13,14 Figure 5.35 shows a schematic of the top error amplifier and M1 from Fig. 5.32.14 A complementary structure used to drive M2 is not shown. The difference between V i and V, is sensed by the differential pair Mll and M12, which is biased by the tail current source ITAIL.The load of the differential pair consists of two parts: current mirror MI3 and M14 and common-drain transistors MI5 and MI6. The purpose of the common-drain transistors is to reduce the output resistance of the error amplifier to set its gain to a well-defined low value. The gates of the common-drain transistors are biased by a negative feedback loop including MI3,M17,IBIAS,and M15. This circuit adjusts the voltage at the gate of MI5 SO that MI7 operates in the active region and conducts IBIAs.Although negative feedback is studied in Chapter 8, the basic idea can be understood here as follows. If 1IDI71 is less than IBIAS,current source IBIAS pulls the gate voltage of MI5down. Since MI5 operates as a source follower, the source of MI5is pulled down, increasing )IDl31. Because M13and MI7 together form a current mirror, (10171 also increases until (IDl7[ = IBIASSimilar reasoning shows that this equality is established when 1IDI7( is initially greater than IBIAS.If MI5and M17 are enhancement-mode devices, MI7operates in the active region because VGDI7= VsG15 = (Vrl5/-k (Vovl5(> 0 > VtI7; therefore, the channel does not exist at the drain of MI7. Since MI3 and M17form a current mirror,

-G Figure 5.35 Schematic of the top error amplifier and output transistor M , .

390

Output Stages

Chapter 5

Since M13 and M14also form a current mirror, and since (WIL)14 = (WIL)13,

With Vi

=

V,,

From KCL, 1016 = ID14

+ ID11


= ID16 when IDll= IDl2, Since ID15

Therefore, ignoring channel-length modulation,


This equation shows that the drain current in Ml is controlled by IBIAs and a ratio of transistor sizes if the offset voltage of the error amplifier is zero so that V, = 0 when Vi = 0. In practice, (WIL)l >> (WIL)17SO that little power is dissipated in the bias circuits. Another design consideration comes out of these equations. To keep the gain of the error amplifier low under all conditions, MI6 must never cut off. Therefore, from (5.133), (IDl4( should be greater than the maximum value of IDll. Since the maximum value of IDll is ITAIL,(5.131) and (5.133) show that

To find the gain of the error amplifier, the key observation is that the small-signal resistance from the drain of M13 to ground is zero, ignoring channel-length modulation. This result stems from the operation of the same negative feedback loop that biases the gate of MI5.If the small-signal voltage at the drain of M13 changes, the negative feedback loop works to undo the change. For example, suppose that the drain voltage of M13 increases. This change reduces the gate voltage of MI5 because MI7 operates as a common-source amplifier. Then the drain voltage of MI3 falls because M I 5 operates as a source follower. Ignoring channel-length modulation, the drain voltage of Ml3 must be held exactly constant because id17 = 0 if IBIASis constant. Therefore, the small-signal resistance at the input of the current mirror M13 and M14is zero. AS a result, none of the small-signal drain current from M12 flows into the source of MI5. Instead, it is all mirrored to the output of the error amplifier by M13and M14.Furthermore, the small-signal drain current from Mll flows directly to the output of the error amplifier. Therefore, the short-circuit transconductance of the error amplifier is the same with or without the common-drain transistors MI5 and MI6.Without these transistors, the error amplifier is simply a differential pair with a


391

current-mirror load. From (4.143), G m = gm11 = gm12

Ignoring channel-length modulation, the output resistance is set by common-drain transistor MI6.From (3.84),

Therefore, the gain of the error amplifier is

5.5.3 Alternative Configurations The main potential advantage of the common-source output stage described in the last section is that it can increase the output swing compared to the common-drain case. However, the common-source configuration suffers from an increase in harmonic distortion, especially at high frequencies, for two main reasons. First, the bandwidth of the error amplifiers is usually limited, to avoid stability problems. Second, the gain of these amplifiers is limited to establish adequate control on the quiescent output current. 5.5.3.1 Combined Common-Drain Common-Source Configuration

One way to overcome this problem is to use a combination of the common-drain and common-source configurations shown in Fig. 5.31 and Fig. 5.32.15 The combined schematic is shown in Fig. 5.36. The key aspect of this circuit is that it uses two buffers connected to the output: a Class-AB common-drain buffer ( M 1 - M 2 ) and a Class-B quasi-complementary common-source buffer (Mll-MI2 and the error amplifiers A). The common-source buffer is dominant when the output swing is maximum, but off with zero output. On the other hand, the common-drain buffer controls the quiescent output current and improves the frequency response, as described next. From KVL,

Figure 5.36 Combined common-drain, common-source output stage.

392 Chapter 5 If Vtl

=

Output Stages

Vt4,this equation can be rewritten as

Therefore, when Vi is adjusted so that V1 (1.166), V,,] = Vov4if

=

0, M1-M5force V,

=

0 if VOv1= Vov4.From

Substituting (5.101) into (5.144) and rearranging shows that Vovl = Vov4if

We will assume that this condition holds so that V, = 0 when V1 = 0. In this case, MI1 and M12 are designed to be cut off. This characteristic stems from small offsets designed into the error amplifiers. These offsets are shown as voltage sources Vos in Fig. 5.36 and can be introduced by intentionally mismatching the input differential pair in each error amplifier. With V1 = V, = 0 and Vos > 0, the error amplifiers are designed to give Vgsll > Vtll and Vgs12< Vt12 SO that M l land MI2 are off. As a result, the quiescent output current is controlled by the common-drain stage and its biasing circuit M1-M5, as shown in (5.101). As Vi decreases from the value that forces V1 = 0, V1 increases and V, follows but with less than unity gain if RL is finite. Therefore V1 - V, increases, and both VSsl1and Vgs12decrease, eventually turning on Mll but keeping M12 off. After MI1 turns on, both Idl and IIdI1Iincrease as V, rises until Vgsl - Vtl reaches its maximum value. Such a maximum occurs when the output swing from the common-source stage is greater than that of the common-drain stage. As V, rises beyond this point, pdllJincreases but Idl decreases, and the common-source stage becomes dominant. From (5.103), the output swing allowed by the common-drain stage in Fig. 5.31 is limited in part by Vgsl, which includes a threshold component. On the other hand, the output swing limitation of common-source stage in Fig. 5.32 does not include a threshold term, and this circuit can swing within an overdrive of the positive supply. So with proper design, we expect the common-source stage to have a larger output swing than the common-drain stage. When the two circuits are combined as in Fig. 5.36, however, the output swing is limited by the driver stage that produces V1. Define V: as the maximum value of V1 for which M3 operates in the active region. Then

Since V1 is the input to the common-source stage, the maximum output V: can be designed to be

Comparing (5.147) with (5.103) shows that the positive swing of the combined output stage in Fig. 5.36 exceeds that of the common-drain output stage in Fig. 5.31 provided that Vgs4 < Vgsl when V, = V:. This condition is usually satisfied because Id4 V i l l and Vgs12< V t I 2SO that M1 and M12 are off when V i = 0. As a result, the quiescent output current of this output stage is controlled by M 1 , M2, and the A l amplifiers. Figure 5.39 shows a schematic of the top A I amplifier and M 1 from Fig. 5.38.17 A complementary configuration is used for the bottom A l amplifier but is not shown for simplicity. The difference between V i and V, is sensed by the differential pair M3 and M4. The load of the differential pair consists of two parts: diode-connected transistors M 5and M6 and current sources IBIAS, which are implemented by the outputs of p-channel current mirrors in practice. The purpose of the diode-connected transistors is to limit the gain of the error amplifier to a small value so that the output quiescent current is well controlled. Ignoring channel-length modulation, the gain of this error amplifier is

where A l is the gain from the differential input to the differential output of the error amplifier. This equation shows that the gain is determined by the ratios of the transconductance of a differential-pair transistor to that of a load transistor. Substituting (1.180) into (5.148)


395

Figure 5.39 Schematic of the top A, amplifier and output transistor M , .

for each transistor, and rearranging gives

This equation shows that the gain is determined by the product of the ratios of the transconductance parameters, the transistor sizes, and the bias currents. From KCL at the drain of M5, where ID3> IBIAS.Substituting (5.150) into (5.149) gives

This equation shows that the purpose of the IBIAs current sources is to allow the bias current in a transistor in the differential pair to exceed that in a diode-connected load. As a result, the term in parentheses in (5.151) is greater than unity and contributes to the required gain. Now consider the effect of the offset Vos in Fig. 5.38. In practice, the offset is implemented in Fig. 5.39 by choosing the width of M3 to be less than the width of M4 by about 1 20 percent.17 Assume that V, = 0 when Vi = 0. Increasing Vos reduces 103, making [ID5 less than the value given in (5.150). Since M5 and M1 form a current mirror, a positive offset reduces [ID1I. Under the assumption that V, = 0 when V i = 0, the differential pair in the error amplifier operates with Vgs3 = Vgs4. Therefore, if Vt3 = Vt4, Vov3 = Vod. From (1.166),

into (5.152) and rearranging gives Substituting ID3+ ID4= ITAIL

396

Chapter 5

Output Stages

when V, = V i = 0. Similarly, a positive offset in the bottom AI amplifier as labeled in Fig. 5.38 reduces ID2. If the tail and bias current in the top Al amplifier are identical to the corresponding values in the bottom Al amplifier, and if the fractional mismatches in the differential pairs are identical, the reductions in (ID1(and ID2 caused by the mismatches intentionally introduced into the differential pairs are equal and V, = 0 when Vi = 0 is assumed. In other words, the offset of the entire output stage shown in Fig. 5.38 is zero even with nonzero Vos in the error amplifiers. Because a design goal is to bias M1 in the active region when Vi = 0, the offset must be chosen to be small enough that ID3> 0 when V, = Vi = 0. Also, the error amplifiers contain some unintentional mismatches stemming from random effects in practice. Because another design goal is to bias MI1 in cutoff, the random component must not be allowed to be larger than the systematic offset in magnitude and opposite in polarity. Therefore, Vos is chosen to be bigger than the expected random offset. Since the quiescent output current is controlled by the AI error amplifiers along with M1 and M2, the gain of the A2 error amplifiers driving Mll and M12need not be small. With large A2, MI1 or M12 becomes the dominant output device for large output magnitudes if the aspect ratios of MI1and M12are at least as big as M1 and M2, respectively. Furthermore, increasing A2 has the advantage of increasing the loop gain when MI1 or M I 2 turns on. This loop gain is related to the product of A2, gmllor &12, and RL.Increasing the loop gain reduces the error between the input and output, as shown in Chapter 8. If Mll conducts, increasing A2 allows the output stage to drive reduced loads with constant g,ll and error. If the load is fixed, increasing A2 allows the transconductance to be reduced, which in turn allows (WIL)ll to be reduced. One potential concern here is that reducing the transistor sizes also reduces the range of outputs for which the devices operate in the active region. If Mll operates in the triode region, its drain-source resistance roll is finite, and the loop gain is proportional to the product A2gmll(ro1111 RL). Thus, operation of MI1 in the triode region increases the error by reducing g,ll and roll. However, increasing A2 compensates for this effect. Therefore, a key advantage of the output-stage configuration shown in Fig. 5.38 is that it allows the output swing with a given level of nonlinearity to be increased by allowing the dominant transistor to operate in the triode region. The Al and A2 amplifiers together form the two-stage error amplifiers that drive Mll and M12.The A2 amplifiers operate on the differential outputs of the AI amplifiers. Since the common-mode components of the outputs of the AI amplifiers are well controlled by diode-connected loads, differential pairs are not required at the inputs of the A2 amplifiers. Figure 5.40 shows a schematic of the top A2 amplifier.17 A complementary configuration used for the bottom A2 amplifier is not shown for simplicity. The inputs are applied to the gates of common-source transistors M21 and M22. The cascode current mirror M23M26 then converts the differential signal into a single-ended output. Because the output resistance of the cascode-current mirror is large compared to the output resistance of the common-source transistor M22, A2

cl

gm227-022

(5.154)

and A2 = 70 in Ref.17. To determine the range of input voltages for which Mll and M I 2 are both off, let Vgll represent the voltage from the gate of Mll to ground. Assuming that the gains Al and A2 are constant,

where K is a constant. If the differential input voltage to the top A2 amplifier shown in + SO that Id21 = Id22. Substituting this Fig. 5.40 is zero, Vgll = -Vss +


397

Figure 5.40 Schematic of the top A2 amplifier.

-V.ss

boundary condition into (5.155) gives K

= - Vss

+ Vt25 + Vov25;therefore,

Also, (5.117) with g , = g,l = g,z gives V, in terms of V i for the output stage in Fig. 5.38 as long as the random offset is negligible, both M 1 and M2 operate in the active region, and M l l and M12 are off. Since the gates of M 1 and M2 are each driven by only one output of the correspondingAI amplifiers, A = A1/2.With these substitutions, (5.117) gives

To turn M on, V,, < VDD - (V,, 1. Substituting this condition and (5.157) into (5.156) gives

where Vi(h,) is the minimum value of Vifor which M l l conducts nonzero drain current. To interpret this result, let A2 m. Then to turn M l l on, the required differential input voltage of the top A2 amplifier VZt = 0. Therefore, the required differential input of the top A 1 amplifier is zero; that is, +

This equation and (5.157) are both plotted in Fig. 5.41. As the input voltage increases, the output voltage follows with a slope less than unity if RL is finite, as shown by the solid plot. Therefore, as V iincreases, V i- V, also increases. To turn M I 1barely on, this difference must be equal to Vos so that the circuit operates at the intersection of the two lines in Fig. 5.41. Substituting (5.157) into (5.159) gives

This equation agrees with the result that would be obtained by allowing A2 -+ in (5.158). The term in parentheses in (5.160) is equal to the reciprocal of the difference in the slopes of the two lines in Fig. 5.41.

398 Chapter 5

Output Stages

, V, +OS

Figure 5.41 Graphical interpretation of which is the minimum Vi needed to turn on MI1 in Fig. 5.38.

Vi(min)

R ,'

L

EXAMPLE

Find the minimum input voltage in Fig. 5.38 for which Mll turns on, assuming at first that Az CO and then that A2 = 70. Let Vos = 10 mV, Al = 8, g,l = 5 m m ,RL = 60 1(1, VDD = Vss = 2.5 V, Vtll = -0.7 V, Vt25 = 0.7 V, and Vov25= 0.1 V. From (5.160), Vi,,inl = l 0 mV[1 + 8(0.005)(60)] = 34 mV +

when A2

m

+

m.

On the other hand, when A2

=

70, (5.158) shows that

This example shows that the minimum input voltage required to turn on M11 is reduced from the value given in (5.160) when A2 is finite, because the fractional term in (5.158) is positive. The key point of this analysis is that Mll and M12in Fig. 5.38 remain off for only a small range of input voltages. Therefore, the nonlinearity introduced by turning on M1l or MI2 occurs when lVil is small. As a result, this circuit is well suited for the ISDN (Integrated Service Digital Network) line-driving application for which it was designed because the required four-level output code does not include zero, avoiding distortion that would be introduced by turning Mll and M12on or off17 if a zero-level output pulse were required.

PROBLEMS 5.1 A circuit as shown in Fig. 5.1 has Vcc = 15 V , R I R2 = 0 , R 3 = 5 kQ,RL = 2 klR, V C E ~=~ 0.2 ~ ~ ,V, and V~,E(~") = 0.7 V. All device areas are equal. (a) Sketch the transfer characteristic from Vi to V,. (b) Repeat (a) if RL = 10 kS1. (C) Sketch the waveform of V, if a sinusoidal input voltage with an amplitude (zero to peak) of 10 V is applied at Vi in (a) and (b) above. (d) Use SPICE to verify (a), (b), and (c) and also to determine second and third harmonic distortion in V, for the conditions in (c).

5.2 (a) For the circuit of Problem 5.1, sketch load lines in the &-V,, plane for RL = 2 kQ and

RL

=

10kS1.

(b) Calculate the maximum average sinusoidal output power that can be delivered to RL (both values) before clipping occurs in (a) above. Sketch corresponding waveforms for IC1,VCe1,and P,, . (C) Calculate the circuit efficiency for each value of RL in (b). (Neglect power dissipated in Q3 and R3.) (d) Select RL for maximum efficiency in this circuit and calculate the corresponding average output power with sinusoidal signals.

Problems

5.3 (a) Prove that any load line tangent to a power hyperbola makes contact with the hyperbola at the midpoint of the load line. (b) Calculate the maximum possible instantaneous power dissipation in Ql for the circuit of Problem 5.1 with RL = 2 k 0 and RL = l0 k n . (C) Calculate the average power dissipated in Q , for the circuit of Problem 5.1 with RL = 2 ka and RL = 10 k a . Assume that V, is sinusoidal with an amplitude equal to the maximum possible before clipping occurs. 5.4 If / 3 ~= 100 for Ql in Problem 5.1, calculate the average signal power delivered to Q , by its driver stage if V, is sinusoidal with an amplitude equal to the maximum possible before clipping occurs. Repeat for RL = 10 k a . Thus calculate the power gain of the circuit. 5.5 Calculate the incremental slope of the transfer characteristic of the circuit of Problem 5.1 at the quiescent point and at the extremes of the signal swing with a peak sinusoidal output of 1 V and RL = 2 k n . 5.6 (a) For the circuit of Problem 5.1, draw load lines in the I,-V,, plane for RL = 0 and RL m. Use an I, scale from 0 to 30 mA. Also draw constant power hyperbolas for P, = 0.1 W ,0.2 W , and 0.3 W. What is the maximum possible instantaneous power dissipation in Q, for the above values of RL? Assume that the driver stage can supply a maximum base current to Q1 of 0.3 mA &d PF = 100 for Q , . (b) If the maximum allowable instantaneous power dissipation in Q, is 0.2 W, calculate the minimum allowable value of RL. (A graphical solution is the easiest.) 5.7 Calculate the incremental slope of the transfer characteristic of the circuit of Fig. 5.8 at the quiescent point and at the extremes of the signal swing with vi = Vli sinwt and Ci = 0.5 V : (a) Let A: = A, when v i is maximum. (b) Let A,Q = A . when vi = 0. (C) Let A; = A, when vi is minimum. Assume that V , = 0, VDo = 2.5V, Za = 1 mA, and RL + m. Also, assume that (WIL)] = 1000, k' = 200 p.AN2, Vto = 0.7 V , 4f= 0.3 V , and y = 0.5 V'". 5.8 When the distortion is small, the second and third harmonic-distortion terms of an amplifier can be calculated from the small-signal gains at the quiescent and extreme operating points. Starting with the power series given in (5.41), -+

399

(a) Calculate an expression for the small-signal gain A, = dv,ldvi. (b) Let vi = v^i sin wt as in (5.52), and derive expressions for A,: AVQ,and A; as defined in Problem 5.7. ( C ) Define two normalized differential gain error terms as (i) E+ = (A: - A,Q)IA,~ (ii) E- = (A; - A,Q)IA,Q and calculate expressions for (Ef E-) and (E+ - E-). (d) Compare the results of part (c) with (5.54) and (5.57) to calculate HD2 and H D 3 in terms of E+ and E-. (ej Use the results of part (d) and Problem 5.7 to calculate H D 2 and HD3 for the circuit of Fig. 5.8 under the conditions given in Problem 5.7. Compare the results to the results of the Example in Section 5.3.2. 5.9 Calculate second-harmonic distortion in the common-source amplifier with a depletion load shown in Fig. 4 . 2 0 ~for a peak sinusoidal input voltage Bi = 0.01 V and V D = ~ 3 V. Assume that the dc input voltage is adjusted so that the dc output voltage is 1 V. For simplicity, assume that the two transistors have identical parameters except for unequal threshold voltages. Let WIL = 100, k' = 200 (*AN2, and A = 0. Assume Vll vsB, =o 0.6 V , V ? /vSB2=o= -0.6 V , +f = 0.3 V , and y = 0.5 V1I2.Use SPICE to verify the result. 5.10 The circuit of Fig. 5.10 has Vcc = 15 V, RL = 2 kfi, V B E ( ~=~ )0.6 V, and VC~(sao = 0.2 V. (a) Sketch the transfer characteristic from V ito V, assuming that the transistors turn on abruptly for Vbe = V B E ( ~ ) . (b) Sketch the output voltage waveform and the collector current waveform in each device for a sinusoidal input voltage of amplitude 1 V, 10 V, 20 v. ( C ) Check (a) and (b) using SPICE with Is = 10-l6 A , ~ F= 100,rb = 100 CR, and r, = 20 IR for each device. Use SPICE to determine second and third harmonic distortion in V, for the conditions in (b). 5.1 1 For the circuit of Fig. 5.10, assume that Vcc = 12 V, RL = 1 kQ, and VC,qsat, = 0.2 V. Assume that there is sufficient sinusoidal input voltage available at V, to drive V,, to its limits of clipping. Calculate the maximum average power that can be delivered to RL before clipping occurs, the corresponding efficiency, and the maximum

+

1

400 Chapter 5

Output Stages

instantaneous device dissipation. Neglect crossover distortion. 5.12 For the circuit of Problem 5.10, calculate and sketch the waveforms of I,I, V,,, , and P, I for device Qr over one cycle. Do this for output voltage amplitudes (zero to peak) of 11.5 V, 6 V, and 3 V. Neglect crossover distortion and assume sinusoidal signals. 5.13 In the circuit of Fig. 5.13, Vcc = 12 V, IQ = 0.1 mA, RL = 1 kfl, and for all devices IS = 10-'5A, PF = 150. Calculate the value of V, and the current in each device for V, = 0, ? 5 V, and C 10 V. Then sketch the transfer characteristic from V, = 1 0 V t o V , = -10V. 5.14 For the output stage of Fig. 5.18, assume that Vcc = 15 V and for all devices VCE(sat)0.2 V, = 0.7 V, and PF = 50. (a) Calculate the maximum positive and negative limits of V, for RL = 10 k R and RL = 2 k R . (b) Calculate the maximum average power that can be delivered to RL before clipping occurs for RL = 10 k R and RL = 2 k f i . Calculate the corresponding circuit efficiency (for the output devices only) and the average power dissipated per output device. Neglect crossover distortion and assume sinusoidal signals. 5.15 For the output stage of Fig. 5.20n, assume that Vcc = 15 V, PF(pnp) = 50, P ~ ( n p n )= 200, and for all devices VRE(on)= 0.7 V, Vc,qsat) = 0.2 V, Is = 10-l4 A. Assume that the magnitude of the collector current in Q13*is 0.2 mA.

(a) Calculate the maximum positive and negative limits of V, for RL = 10 k n , RL = 1 k R , and RL = 200 R. (b) Calculate the maximum average power that can be delivered to RL = 1 kfl before clipping occurs, and the corresponding circuit efficiency (for the output devices only). Also calculate the peak instantaneous power dissipation in each output device. Assume sinusoidal signals. 5.16(a) For the circuit of Problem 5.15, calculate the maximum possible average output power than can be delivered to a load RL if the instantaneous power dissipation per device must be less than 100 mW. Also specify the corresponding value of RL and the circuit efficiency (for the output devices only). Assume sinusoidal signals. (b) Repeat (a) if the maximum instantaneous power dissipation per device is 200 mW. 5.17 For the circuit of Problem 5.15, calculate bias currents in 1220, Q19, &l*, and Q14 for V, = -10 V with RL = 1 k R . Use Is = 10-13A for all devices. 5.18 An all-npn Darlington output stage is shown in Fig. 5.42. For a11 devices VLiE(,,,,)= 0.7 V, VCE(sat) = 0.2 V, PF = 100. The magnitude of the collector current in Q3 is 2 mA. (a) If RL = 8 R , calculate the maximum positive and negative limits of V,,. (b) Calculate the power dissipated in the circuit for V, = 0 V.

Figure 5.42 All-npn Darlington

output stage.

Problems 401 (C) Calculate the maximum average power that can be delivered to RL = 8 Ln before clipping occurs and the corresponding efficiency of the complete circuit. Also calculate the maximum instantaneous power dissipated in each output transistor. Assume that feedback is used around the circuit so that V, is approximately sinusoidal. (d) Use SPICE to plot the clc transfer characteristic from Vi to V, as V, is varied over the complete output voltage range with RL = 8 R. For Ql, Q5, and D1 assume Is = lO-I5 A, rb = 1 0, r, = 0.2 p, = 100, and VA = 30 V. Assume Q4, Q2, D2, and D3 are 11100 the size of the large devices. For Q3 assume r, = 50 C! and VA = 30 V. 5.19 For the circuit of Fig. 5.25, assume that Vcc = 15 V, &(pnp) = 30, PF(npn) = 150, Is(npn) = 10-l4 A, Is(pnp) = lO-I5 A, and for all devices VeE(on) = 0.7 V, VCE(sat)= 0.2 V. ASsume that Q5 and Q6 are npn devices and the collector current in Q7 is 0.15 mA. (a) Calculate the maximum positive and negative limits of V, for RL = 1 k R . (b) Calculate quiescent currents in Ql-Q7 for v, = 0 v. (C) Calculate the maximum average output power (sine wave) that can be delivered to RL if the maximum instantaneous dissipation in any device is 100 mW. Calculate the corresponding value of RL,and the peak currents in Q3 and Q4.

a,

5.20 A BiCMOS Class AB output stage is shown in Fig. 5.43. Device parameters are ~ ) 0.8 V, P ~ ( n p n )= 80, P F ( P ~ P )= 20, V B E ( ~ = ppC,, = 26 p m 2 , and V, = -0.7 V. (a) Calculate bias currents in all devices for v, = 0. (b) Calculate the positive and negative limits of V, for RL = 200 Ln. Thus calculate the maximum average power that can be delivered to RL before clipping occurs. (C) Use SPICE to check (a) and also to plot the complete dc transfer characteristic of the circuit from Vi to V,. Also plot the waveforms of ],I, Ic2, and Id2 for a sinusoidal output voltage at V, of 2 V and then 4 V zero-to-peak. In the simulation, assume bipolar parameters as in Fig. 2.32 and MOS parameters as in Table 2.3 (apart from the values of PF and pFLpCox given above). 5.21 Find the minimum output voltage for the circuit in Fig. 5.3 1. 5.22 Design a CMOS output stage based on the circuit of Fig. 5.3 1 to deliver 5 1 V before clipping at V, with RL = 1 kQ and VDD = Vss = 2.5 V. Use 10 p A bias current in M3 and 100 p A idling current in M 1 and M?. Set (WILj3 = 5011 and (W/& = 2511. Specify the WIL for M1 -M6 that minimizes the total chip area. Use the transistor parameters in Table 2.3 except assume that Leff = Ldrwn for simplicity. The minimum channel

Figure 5.43 BiCMOS Class AB output stage.

402 Chapter 5

Output Stages

length is 1 pm. Assume the body of each n-channel transistor is connected to -Vss, and the body of each p-channel transistor is connected to VDD.Use SPICE to verify your design by plotting the V, vs. Vi characteristic. 5.23 For the circuit in Fig. 5.34, assume that the input voltage Vi is high enough that M 1 operates in the active region but M2 is cut off. Using the same assumptions as in the derivation of (5.116), show that V , is related to V, by the following expression

(C)

RL

=

100

a.

(d) The maximum allowed gain error with zero

offsets and all transistors operating in the active region is 1 percent. (e) In Fig. 5.35, (WIL),, = (WIL)1/100 and ( W / L ) 1 3= (WIL)14 = (WIL)IIIO. Similarly, in Problem 5.24, (WIL)27 = (WIL)2/100 and (W/L)23 = (W/L)24 = (WIL)2/10. (f) To control the quiescent current, the maximum allowed error-amplifier gain is 5. (g) Your solution is allowed to use four ideal 1 V," current sources, two in each error amplifier. To alv, = vi + - vosp + A W low these ideal current sources to be replaced by ~ I - A ~ R ~ L real transistors in a design step not required in this problem, the voltage across each ideal current source in Fig. 5.35 must be at least 0.5 V when - + 2k'-V i + ---- - Vosp LA RL2 ( w V, 2 0. Similarly, the voltage across each ideal current source in the complementary circuit from 5.24 Using a circuit that is the complement of Problem 5.24 must be at least 0.5 V when V, 5 0. the one in Fig. 5.35, draw the schematic for the botdo not cut (h) To guarantee that M I 6 and tom error amplifier and output transistor M2,which off under these conditions, assume ITAIL = 51BIAS are shown in block diagram form in Fig. 5.32. In in Fig. 5.35 and IrArLP = 51BIASP in Problem 5.24. the error amplifier, label the transistors as M21 - M 2 7 , (i) For both n- and p-channel transistors, aswhere M 2 , is the complement of M 1 l , M22 is the sume that h = 0 , Ld = Xd = 0, and ignore the complement of M12,etc. Also, label the current body effect. Use Ldmn = 1 k m for all transistors, and ITAIL as I B I A ~and P use Table 2.3 for other transistor parameters. sources complementary to IBTAs and ITAILP, respectively. (j) The distortion of the output stage should be 5.25 Using the schematics from Fig. 5.35 and minimized under the above conditions. Problem 5.24, design the output stage shown in Verify your design using SPICE. Fig. 5.32 to satisfy the following requirements. (a) VDD = Vss = 2.5 V. (b) The standby power dissipation should be no more than 70 mW.

1

References

403

REFERENCES 1. E. M. Cherry and D. E. Hooper. Amplihing Devices and Low-Pass AmplGer Design. Wiley, New York, 1968, Ch. 9. 2. E. Fong and R. Zeman. "Analysis of Harmonic Distortion in Single-Channel MOS Integrated Circuits," IEEE Journal of Solid-State Circuits, Vol. SC- 17, pp. 83-86, February 1982. 3. Y. P. Tsividis and D. L. Fraser, Jr. "Harmonic Distortion in Single-Channel MOS Integrated Circuits," IEEE Journal of Solid-State Circuits, Vol. SC-16, pp. 694-702, December l98 1. 4. E. M. Cherry and D. E. Hooper. Op. cit., Ch. 16. 5. J. Millman and C. C. Halkias. Integrated Electronics. McGraw-Hill, New York, 1972, Ch. 18. 6. A. B. Grebene. Analog Integrated Circuit Design. Van Nostrand Reinhold, New York, 1972, Ch. 5-6. 7. T. M. Frederiksen and J. E. Solomon. "A High-Performance 3-Watt Monolithic Class-B Power Amplifier," IEEE Journal of Solid-state Circuits, Vol. SC-3, pp. 152-160, June 1968. 8. P. R. Gray. "A 15-W Monolithic Power Operational Amplifier," IEEE Journal of Solid-State Circuits, Vol. SC-7, pp. 474480, December 1972. 9. R. G. Meyer and W. D. Mack. " A Wideband Class AB Monolithic Power Amplifier," IEEE Journal of Solid-State Circuits, Vol. 24, pp. 7-12, February 1989. 10. E. L. Long and T. M. Frederiksen. "HighGain 15-W Monolithic Power Amplifier with Internal Fault Protection," IEEE Journal of Solid-State Circuits, Vol. SC-6, pp. 3 5 4 4 , February 1971.

11. K. Tsugaru, Y. Sugimoto, M. Noda, T. Ito, and Y. Suwa. "A Single-Power-Supply 10-b Video BiCMOS Sample-and-Hold IC," IEEE Journal of Solid-State Circuits, Vol. 25, pp. 653459, June 1990. 12. K. E. Brehmer and J. B. Wieser. "LargeSwing CMOS Power Amplifier," IEEE Journal of Solid-State Circuits, Vol. SC-18, pp. 624-629, December 1983. 13. B. K. Ahuja, P. R. Gray, W. M. Baxter, and G. T. Uehara. "A Programmable CMOS Dual Channel Interface Processor for Telecommunications Applications," IEEE Journal of SolidState Circuits, Vol. SC-19, pp. 892-899, December 1984. 14. H. Khorrarnabadi. "A CMOS Line Driver with 80 dB Linearity for ISDN Applications," IEEE Journal of Solid-State Circuits, Vol. 27, pp. 539544, April 1992. 15. J. A. Fisher. "A High-Performance CMOS Power Amplifier," IEEE Journal ofsolid-State Circuits, Vol. SC-20, pp. 1200-1205, December 1985. 16. K. Nagaraj. "Large-Swing CMOS Buffer Amplifier," IEEE Journal of Solid-State Circuits, Vol. 24, pp. 181-183, February 1989. 17. H. Khorramabadi, J. Anidjar, and T. R. Peterson. "A Highly Efficient CMOS Line Driver with 80-dB Linearity for ISDN U-Interface Applications," IEEE Journal of Solid-State Circuits, Vol. 27, pp. 1723-1729, December 1992.

OperationalAmplifiers with Single-EndedOutputs In the previous three chapters, the most important circuit building blocks utilized in analog integrated circuits (ICs) have been studied. Most analog ICs consist primarily of these basic circuits connected in such a way as to perform the desired function. Although the variety of standard and special-purpose custom ICs is almost limitless, a few standard circuits stand out as perhaps having the widest application in systems of various kinds. These include operational amplifiers, voltage regulators, and analog-to-digital (AID) and digital-to-analog (DIA) converters. In this chapter, we will consider monolithic operational amplifiers (op amps) with single-ended outputs, both as an example of the utilization of the previously described circuit building blocks and as an introduction to the design and application of this important class of analog circuit. Op amps with fully differential outputs are considered in Chapter 12, and voltage-regulator circuits are considered in Chapter 8. The design of AID and DIA converters is not covered, but it involves application of the circuit techniques described throughout the book. An ideal op amp with a single-ended output has a differential input, infinite voltage gain, infinite input resistance, and zero output resistance. A conceptual schematic diagram is shown in Fig. 6.1. While actual op amps do not have these ideal characteristics, their performance is usually sufficiently good that the circuit behavior closely approximates that of an ideal op amp in most applications. In op-amp design, bipolar transistors offer many advantages over their CMOS counterparts, such as higher transconductance for a given current, higher gain (g,r,), higher speed, lower input-referred offset voltage and lower input-referred noise voltage. (The topic of noise is considered in Chapter l l.) As a result, op amps made from bipolar transistors offer the best performance in many cases, including for example dc-coupled, lowoffset, low-drift applications. For these reasons, bipolar op amps became commercially significant first and still usually offer superior analog performance. However, CMOS technologies have become dominant in building the digital portions of signal-processing systems because CMOS digital circuits are smaller and dissipate less power than their bipolar counterparts. Since these systems often operate on signals that originate in analog form, analog circuits such as op amps are required to interface to the digital CMOS circuits. To reduce system cost and increase portability, analog and digital circuits are now often integrated together, providing a strong economic incentive to use CMOS op amps. In this chapter, we first explore several applications of op amps to illustrate their versatility in analog circuit and system design. CMOS op amps are considered next. Then a general-purpose bipolar monolithic op amp, the 741, is analyzed, and the ways in which the performance of the circuit deviates from ideality are described. Design considerations for improving the various aspects of monolithic op-amp low-frequency performance are described. The high-frequency and transient response of op amps are covered in Chapters 7 and 9.

6.1 Applications of Operational Amplifiers

405

Figure 6.1 Ideal operational

amplifier.

6.1 Applications of Operational Amplifiers 6.1.1 Basic Feedback Concepts

Virtually all op-amp applications rely on the principles of feedback. The topic of feedback amplifiers is covered in detail in Chapter 8; we now consider a few basic concepts necessary for an understanding of op-amp circuits. A generalized feedback amplifier is shown in Fig. 6.2. The block labeled a is called the forward or basic amplifier, and the block labeled f is called the feedback network. The gain of the basic amplifier when the feedback network is not present is called the open-loop gain, a, of the amplifier. The function of the feedback network is to sense the output signal S, and develop a feedback signal Sfb , which is equal to f S,, where f is usually less than unity. This feedback signal is subtracted from the input signal Si, and the difference S, is applied to the basic amplifier. The gain of the system when the feedback network is present is called the closed-loop gain. For the basic amplifier we have

and thus

where T = a f is called the loop gain. When T becomes large compared to unity, the closed-loop gain becomes

Since the feedback network is composed of passive components, the value off can be set to an arbitrary degree of accuracy and will establish the gain at a value of l1f if T >> 1, independent of any variations in the open-loop gain a. This independence of closed-loop performance from the parameters of the active amplifier is the primary factor motivating the wide use of op amps as active elements in analog circuits. For the circuit shown in Fig. 6.2, the feedback signal tends to reduce the magnitude of S, below that of the open-loop case (for which f = 0)when a and f have the same sign. This case is called negative feedback and is the case of practical interest in this chapter.

406 Chapter 6

Operational Amplifiers with Single-Ended Outputs

-

-

a

L

Si

+

T

*S*

-

f S ~ b

4

Figure 6.2 A conceptual feedback amplifier.

With this brief introduction to feedback concepts, we proceed to a consideration of several examples of useful op-amp configurations. Because these example circuits are simple, direct analysis with Kirchoff's laws is easier than attempting to consider them as feedback amplifiers. In Chapter 8, more complicated feedback configurations are considered in which the use of feedback concepts as an analytical tool is more useful than in these examples. 6.1.2 Inverting Amplifier The inverting amplifier connection is shown in Fig. 6 . 3 ~ . ' , We ~ 8 ~assume that the op-amp input resistance is infinite, and that the output resistance is zero as shown in Fig. 6.1. From KCL at node X,

Since Rz is connected between the amplifier output and the inverting input, the feedback is negative. Therefore, V iwould be driven to zero with infinite open-loop gain. On the

Figure 6.3 (a) Inverting amplifier configuration. ( b )Noninverting amplifier configuration. ( c ) Voltage-follower configuration.


407

other hand, with finite open-loop gain a,


If the gain of the op amp is large enough that

then the closed-loop gain is

When the inequality in (6.7) holds, (6.8) shows that the closed-loop gain depends primarily on the external passive components RI and R2. Since these components can be selected with arbitrary accuracy, a high degree of precision can be obtained in closed-loop performance independent of variations in the active device (op-amp) parameters. For example, if the op-amp gain were to change from 5 X lo4 to 105, this 100 percent increase in gain would have almost no observable effect on closed-loop performance provided that (6.7) is valid. EXAMPLE Calculate the gain of the circuit Fig. 6.3a, for a 10 kfl. From (6.6) with a = 104,

From (6.6) with a

=

=

104and a

=

105,and RI = 1kcR, R2 =

105,

The large gain of op amps allows the approximate anaIysis of circuits like that of Fig. 6 . 3 to ~ be performed by the use of summing-point constraints.' If the op amp is connected in a negative-feedback circuit, and if the gain of the op amp is very large, then for a finite value of output voltage the input voltage must approach zero since

Thus one can analyze such circuits approximately by assuming a priori that the op-amp input voltage is driven to zero. An implicit assumption in doing so is that the feedback is negative, and that the circuit has a stable operating point at which (6.10) is valid.

408 Chapter 6

m


The assumption that V i = 0 is called a summing-point constraint. A second constraint is that no current can flow into the op-amp input terminals, since no voltage exists across the input resistance of the op amp if Vi = 0. This summing-point approach allows an intuitive understanding of the operation of the inverting amplifier configuration of Fig. 6 . 3 ~ Since . the inverting input terminal is forced to ground potential, the resistor RI serves to convert the voltage Vs to an input current of value VsIR1.This current cannot flow in the input terminal of an ideal op amp; therefore, it flows through R2, producing a voltage drop of VsR21RI.Because the op-amp input terminal operates at ground potential, the input resistance of the overall circuit as seen by Vs is equal to R1. Since the inverting input of the amplifier is forced to ground potential by the negative feedback, it is sometimes called a virtual ground. 6.1.3 Noninverting Amplifier

The noninverting amplifier is shown in Fig. - 6 . 3 b . l ~Using ~ ~ ~ Fig. 6.1, assume that no current flows into the inverting op-amp input terminal. If the open-loop gain is a , Vi = V,la and

Rearranging (6.1 1) gives aR1

The approximation in (6.12) is valid to the extent that aRII(RI+ R2) >> 1. In contrast to the inverting case, this circuit displays a very high input resistance as seen by V , because of the type of feedback used. (See Chapter 8.) Also unlike the inverting case, the noninverting connection causes the common-mode input voltage of the op amp to be equal to V,. An important variation of this connection is the voltage follower, in which R1 + and R2 = 0. This circuit is shown in Fig. 6.3c, and its gain is close to unity if a >> 1. 6.1.4 Differential Amplifier

The differential amplifier is used to amplify the diflerence between two voltages. The circuit is shown in Fig. 6 . 4 . ' ~For ~ this circuit, Iil = 0 and thus resistors R1 and R2 form a voltage divider. Voltage V , is then given by

The current I1 is

The output voltage is given by V, = V,

-

I2R2


409

Figure 6.4 Differential amplifier configuration.

If the open-loop gain is infinite, the summing-point constraint that Vi = 0 is valid and forces V, = V,. Substituting V, = V,, (6.13), and (6.1'4) into (6.15) and rearranging gives

The circuit thus amplifies the difference voltage (V1 - V2). Differential amplifiers are often required to detect and amplify small differences between two sizable voltages. For example, a typical application is the measurement of the difference voltage between the two arms of a Wheatstone bridge. As in the case of the noninverting amplifier, the op amp of Fig. 6.4 experiences a common-mode input that is almost equal to the common-mode voltage (V1 + V2)/2 applied to the input terminals when R2 >> R 1 . 6.1.5 Nonlinear Analog Operations By including nonlinear elements in the feedback network, op amps can be used to perform nonlinear operations on one or more analog signals. The logarithmic amplifier, shown in Fig. 6.5, is an example of such an application. Log amplifiers find wide application in instrumentation systems where signals of very large dynamic range must be sensed and recorded. The operation of this circuit can again be understood by application of the summing-point constraints. Because the input voltage of the op amp must be zero, the

1 -

Figure 6.5 Logarithmic amplifier configuration.

410

Chapter 6


resistor R serves to convert the input voltage V, into a current. This same current must then flow into the collector of the transistor. Thus the circuit forces the collector current of the transistor to be proportional to the input voltage. Furthermore, the transistor operates in the forward-active region because VcB = 0. Since the base-emitter voltage of a bipolar transistor in the forward-active region is logarithmically related to the collector current, and since the output voltage is just the emitter-base voltage of the transistor, a logarithmic transfer characteristic is produced. In terms of equations,

and

Thus

The log amplifier is only one example of a wide variety of op-amp applications in which a nonlinear feedback element is used to develop a nonlinear transfer characteristic. For example, two log amplifiers can be used to develop the logarithm of two different signals. These voltages can be summed, and then the exponential function of the result can be developed using an inverting amplifier connection with R1 replaced with a diode. The result is an analog multiplier. Other nonlinear operations such as limiting, rectification, peak detection, squaring, square rooting, raising to a power, and division can be performed in conceptually similar ways.

6.1.6 Integrator, Differentiator The integrator and differentiator circuits, shown in Fig. 6.6, are examples of using op amps with reactive elements in the feedback network to realize a desired frequency response or time-domain response.lr2 In the case of the integrator, the resistor R is used to develop a current I I that is proportional to the input voltage. This current flows into the capacitor C, whose voltage is proportional to the integral of the current Il with respect to time. Since the output voltage is equal to the negative of the capacitor voltage, the output is proportional to the integral of the input voltage with respect to time. In terms of equations,

Figure 6.6 ( a ) Integrator configuration. ( b ) Differentiator configuration.


41 1

and V,

=

t. l,'

--

Z2dr

+ V. (0)

Combining (6.20) and (6.21) yields

The performance limitations of real op amps limit the range of V, and the rate of change of V, for which this relationship is maintained. In the case of the differentiator, the capacitor C is connected between V, and the inverting op-amp input. The current through the capacitor is proportional to the time derivative of the voltage across it, which is equal to the input voltage. This current flows through the feedback resistor R, producing a voltage at the output proportional to the capacitor current, which is proportional to the time rate of change of the input voltage. In terms of equations,

6.1.7 Internal Amplifiers The performance objectives for og amps to be used within a monolithic analog subsystem are often quite different from those of general-purpose op amps that use external feedback elements. In a monolithic analog subsystem, only a few of the amplifiers must drive a signal off-chip where the capacitive and resistive loads are significant and variable. These amplifiers will be termed output bufers, and the amplifiers whose outputs do not go off chip will be termed internal amplijiers. Perhaps the most important difference is that the load an internal amplifier has to drive is well defined and is often purely capacitive with a value of a few picofarads. In contrast, stand-alone general-purpose amplifiers usually must be designed to achieve a certain level of performance that is independent of changes in capacitive loads up to several hundred picofarads and resistive loads down to 2 kln or less. 6.1.7.1 Switched-Capacitor Amplifier In MOS technologies, capacitors instead of resistors are often used as passive elements in feedback amplifiers in part because capacitors are often the best available passive components. Also, capacitors can store charge proportional to analog signals of interest, and MOS transistors can act as switches to connect to the capacitors without offset and with little leakage, allowing the discrete-time signal processing of analog quantities. The topic of MOS switched-capacitor amplifiers is one important application of internal amplifiers. Here, we introduce the application to help explain the construction of MOS op amps. Figure 6.7 shows the schematic of an inverting amplifier with capacitive feedback in contrast to the resistive feedback shown in Fig. 6.3a. If the op amp is ideal, the gain from a change in the input AV, to a change in the output AV, is still given by the ratio of the impedance of the feedback element C2 to the impedance of the input element Cl, or

(6.25)

412

Chapter 6


"0

--

Figure 6.7 Inverting amplifier configuration with capacitive feedback without dc bias for the inverting op-amp input.

Unlike the case when resistors are used as passive elements, however, this circuit does not provide dc bias for the inverting op-amp input because the impedances of both capacitors are infinite at dc. To overcome this problem, switches controlled by a two-phase nonoverlapping clock are used to control the operation of the above circuit. The resulting circuit is known as a switched-capacitor amplijel: Figure 6 . 8 shows ~ the schematic of a switched-capacitor amplifier. Each switch in the schematic is controlled by one of two clock phases and 42, and the timing diagram is shown in Fig. 6.8b. We will assume that each switch is closed when its controlling clock signal is high, and open when its clock signal is low. Since and are never both high at the same time, the switches controlled by one clock phase are never closed at the same time as the switches controlled by the other clock phase. Because of this property, the clock signals in Fig. 6.8b are known as nonoverlapping. For example, the left side of Cl is connected to the input V, through switch S , when is high and to ground through switch S 2 when 42 is high, but this node is never simultaneously connected to both the input and ground. To simplify the description of the operation of switched-capacitor circuits, they are often redrawn twice, once for each nonoverlapping clock phase. Figures 6 . 8 ~and 6.8d show the connections when is high (during + l ) and when 42 is high (during 42), respectively. Switches that are closed are assumed to be short circuits, and switches that are open are assumed to be open circuits. To find the output for a given input, an analysis based on charge conservation is used. After switch Sg opens, the charge on the plates of the capacitors that connect to the op-amp input node is conserved until this switch closes again. This property stems partly from the fact that the passive elements connected to the op-amp input node are capacitors, which conduct zero dc current. Also, if the op amp is constructed with an MOS differential input pair, the op-amp input is connected to the gate of one transistor in the differential pair, and the gate conducts zero dc current. Finally, if we assume that switch S3 conducts zero current when it is open, the charge stored cannot leak away while S3 is open. Since both sides of C2 are grounded in Fig. 6.8c, the charge stored on the plates of the capacitors that connect to the the op-amp input node during 4, is

Because the input voltage is sampled or stored onto capacitor Cl during 41, this phase is known as the input sample phase. If the op amp is ideal, the voltage V ifrom the inverting op-amp input to ground is driven to zero by negative feedback during $2. Therefore, the charge stored during is Because the sampled charge appears on Cl during c$1 and on C2 during 42,$2 is known as the charge-transfer phase. By charge conservation, Q2 = Ql ; therefore,

6.1 Applications of Operational Am~lifierS

4 13

Figure 6.8 (a) Schematic of a switched-capacitor amplifier with ideal switches. (6) Timing diagram of clock signals. ( c )Connections during $1. (d) Connections during $2.

In (6.28). V, represents the input voltage at the end of + l , and V, represents the output voltage at the end of C$2. The shape of the output voltage waveform is not predicted by (6.28) and depends on the rates at which the capacitors are charged and discharged. In practice, these rates depend on the bandwidth of the op amp and the resistances of the closed switches. The result in (6.28) is valid as long as the op amp is ideal, the input V, is dc, and the intervals over which #q and C$z are high are long enough to completely charge

414 Chapter 6


and discharge the associated capacitors. The ratio of VJV, in (6.28) is positive because if the voltage applied between the left side of Cl and ground decreases V, > 0 during from a positive value to zero during 49. Therefore, this negative change in the applied voltage during 49 is multiplied by a negative closed-loop amplifier gain, giving a positive ratio in (6.28). MOS technologies are well suited to building switched-capacitor circuits for two key reasons. First, the dc current that flows into the input terminals of MOS op amps is zero as long as the inputs are connected only to the gates of MOS transistors. In contrast, bipolar op amps have nonzero dc input currents that stem from finite PF in bipolar transistors. Second, the switches in Fig. 6.8 can be implemented without offset by using MOS transistors, as shown in Fig. 6.9a. The arrows indicating the source terminals of M 1 - M 5 are arbitrarily chosen in the sense that the source and drain terminals are interchangeable. (Since the source is the source of electrons in n-channel transistors, the source-to-ground voltage is lower than the drain-to-ground voltage.) Assume that the clock voltages alternate between - Vss and VDDas shown in Fig. 6.9b. Also assume that all node voltages are no lower than - Vss and no higher than VDD.Finally, assume that the transistor threshold voltages are positive. Under these conditions, each transistor turns off when its gate is low. Furthermore, each transistor turns on when its gate is high as long as its source operates at least a threshold below VDD. If V, is a dc signal, all drain currents approach zero as the capacitors become charged. As the drain currents approach zero, the MOS transistors that are on operate in the triode region, where the drain-source voltage is zero when the

v,, +ss

st ----

- - - -----

(b)

Figure 6.9 ( a ) Schematic of a switched-capacitor amplifier with n-channel MOS transistors used as switches. (b) Clock waveforms with labeled voltages.


41 5

drain current is zero. Therefore, the input voltage V, is sampled onto Cl with zero offset inserted by the MOS transistors operating as switches. This property of MOS transistors is important in the implementation of switched-capacitor circuits. In contrast, bipolar transistors operating as switches do not give zero collector-emitter voltage with zero collector current. The switched-capacitor amplifier shown in Fig. 6.9a is important in practice mainly because the gain of this circuit has little dependence on the various parasitic capacitances that are present on all the nodes in the circuit. These undesired capacitances stem in part from the drain-body and source-body junction capacitances of each transistor. Also, the opamp input capacitance contributes to the parasitic capacitance on the op-amp input node. Furthermore, as described in Section 2.10.2, the bottom plates of capacitors Cl and C2 exhibit at least some capacitance to the underlying layer, which is the substrate or a well diffusion. Since the gain of the circuit is determined by charge conservation at the op-amp input node, the presence of parasitic capacitance from any node except the op-amp input to any node with a constant voltage to ground makes no difference to the accuracy of the circuit. (Such parasitics do reduce the maximum clock rate, however.) On the other hand, parasitic capacitance on the op-amp input node does affect the accuracy of the circuit gain, but the error is inversely proportional to the op-amp gain, as we will now show. Let C p represent the total parasitic capacitance from the op-amp input to all nodes with constant voltage to ground. If the op-amp gain is a, the voltage from the inverting op-amp input to ground during 42 is given by (6.10). Therefore, with finite op-amp gain, Cl and C p are not completely discharged during &. Under these conditions, the charge stored on the op-amp input node during becomes

When the op-amp gain becomes infinite, (6.29) collapses to (6.27), as expected. Setting Q2 in (6.29) equal to Q1 in (6.26) by charge conservation gives

This closed-loop gain can be written as

where E is a gain error given by

0, and the gain of the switched-capacitor amplifier approaches CI/C2as As a + m, E predicted in (6.28). As a result, the circuit gain is said to be parasitic insensitive to an extent that depends on the op-amp gain. One important parameter of the switched-capacitor amplifier shown in Fig. 6.9a is the minimum clock period. This period is divided into two main parts, one for each clock phase. The duration of 42 must be long enough for the op-amp output to reach and stay within a given level of accuracy. This time is defined as the op-amp settling time and +

41 6

Chapter 6

Operational Amplifiers with Single-EndedOutputs

depends on the switch resistances, the circuit capacitances, and the op-amp properties. The settling time is usually determined by SPICE simulations. Such simulations should be run for both clock phases because the op-amp output voltage during is not well controlled in practice. If the op amp is ideal, this output voltage is zero. With nonzero offset voltage, however, the output voltage will be driven to a nonzero value during that depends on both the offset voltage and the op-amp gain. If the op-amp gain is large, the offset can easily be large enough to force the output voltage to clip near one of the supplies. The output voltage at the end of can be thought of as an initial condition for the circuit during $2. If the initial condition and the desired final output at the end of $2 happen to have far different values, the time required for the output to reach a given level of accuracy during $2 can be increased. Furthermore, nonzero offset can increase the time required for the op-amp output voltage to reach a constant level during c)1. Although the circuit output voltage defined in (6.30) only appears during $2, failure to reach a constant output voltage during causes the initial condition defined above to vary, depending on the value of V, at the end of the preceding c)2. As a result of this memory effect, the circuit can behave as a filter (which is possibly nonlinear), weighting together the results of more than one previous input sample to determine any given output. The key point is that an increase in the minimum duration of either phase requires an increase in the minimum clock period. This effect should be included in simulation by intentionally simulating with nonzero offset voltages. One way to reduce the effect of nonzero offset voltage on the minimum clock period is to include a reset switch at the op-amp output. If the op amp has a single-ended output as shown in Fig. 6.9a, such a switch can be connected between the op-amp output and a bias point between the two supplies. On the other hand, if the op amp has differential outputs as described in Chapter 12, such a reset switch can be connected between the two op-amp outputs. In either case, the reset switch would be turned on during and off during 49.The main value of such a reset switch is that it can reduce both the maximum output voltage produced by a nonzero offset voltage during and the time required to reach this value, in turn reducing the effect of nonzero offset on the minimum durations of both phases. The accuracy of the switched-capacitor amplifier shown in Fig. 6.9a is limited by several other factors that we will now consider briefly. First, even with an ideal op amp, the gain depends on the ratio of capacitors C1/C2, which is not controlled perfectly in practice because of random-mismatch effects. Second, op-amp offset limits the minimum signal that can be distinguished from the offset in the switched-capacitor amplifier. As shown in Section 3.5.6, the input-referred offset of CMOS differential pairs is usually worse than for bipolar differential pairs. This property extends to op amps and stems partly from the reduced transconductance-to-current ratio of MOS transistors compared to their bipolar counterparts and partly from the threshold mismatch term, which appears only in the MOS case. Third, the charge-conservation equation and accuracy of the switchedcapacitor amplifier are affected by the charge stored under the gates of some of the MOS transistors acting as switches in Fig. 6.9a. For example, some of the charge stored under ~ injected onto the op-amp input node after M3 is the gate of transistor M3 in Fig. 6 . 9 is turned off. Techniques to overcome these limitations are often used in practice but are not considered here. 6.1.7.2 Switched-Capacitor Integrator

Another application of an internal op amp, a switched-capacitor integrator, is illustrated . circuit is widely utilized as the basic element of in its simplest form in Fig. 6 . 1 0 ~This monolithic switched-capacitor filters for two main reasons. First, the frequency response


417

Figure 6.10 (a)Schematic of a

switched-capacitor integrator. (b) Timing diagram. (c) Continuoustime equivalent circuit for input frequencies much less than the clock frequency. of the integrator is insensitive to the various parasitic capacitances that are present on all nodes in the circuit. Second, using switched-capacitor integrators as the basic elements, the synthesis of desired filter frequency responses is relatively straightforward. In this section, we will analyze the frequency response of the switched-capacitor integrator. The integrator consists of an op amp, a sampling capacitor CS,an integrating capacitor Cl, and four MOS transistor switches. The load capacitance shown represents the sampling capacitor of the following integrator, plus any parasitic capacitances that may be present. Typical values for the sampling, integrating, and load capacitances are labeled in Fig. 6.10a. Figure 6.10b shows the timing diagram of two nonoverlapping clock signals, 4, and &, that control the operation of the circuit as well as typical input and output waveforms.

418 Chapter 6


During the interval when clock phase is high, transistors M 1 and M3 operate in the triode region and serve to charge the sampling capacitor to a voltage that is equal to the input voltage. Subsequently, clock signal falls. Then clock signal c$2 rises, causing transistors M2 and M4 to turn on and the sampling capacitor to be connected between the inverting op-amp input, which is sometimes called the summing node, and ground. If the op amp is ideal, the resulting change in the summing-node voltage causes the op-amp output to move so that the summing-node voltage is driven back to ground. After the transient has gone to completion, the voltage across CS is driven to zero. To find the relationship between the input and output, a charge-conservation analysis is used. After transistor M l opens in Fig. 6.10a, the charge on the plates of the capacitors connected to node Top and the inverting op-amp input is conserved until M 1 closes again. Define points [n]and [ n + 1/21 as the time indexes at which c$1 and +2 first fall in Fig. 6.10b, respectively. Point [n + l] is defined as the next time index at which +I falls. The points [n]and [n + l ] are separated by one clock period T. If the switches and the op amp are ideal, the charge stored at time index [n]is Under the same conditions, the charge stored at time index [n + 1/21 is From charge conservation, Q[n + 1/21 = Q[n].Also, the charge stored on Cl is constant during under these conditions; therefore, V,[n + l] = V,[n + 1/21, Combining these relations gives

Thus, one complete clock cycle results in a change in the integrator output voltage that is proportional to the value of the input voltage and to the capacitor ratio. Equation 6.35 can be used to find the frequency response of the integrator by using the fact that the operation of delaying a signal by one clock period T in the time domain corresponds to multiplication by the factor e - j w T in the frequency domain. Thus

Therefore, the integrator frequency response is

Using the identity sin

=

1

-(,JX

.

- ,-jx)

2j in (6.37) with

X =

wT/2 we find

-V0 v 3 ( j w ) = ~ ( oT/2 CI sin wT/2 where

)('

- jw

T12

2 jwTI2

)=A( jw

sinoTI2

e-juT/2

)

(6.39)

6.2 Deviations from ldeality in Real Operational Amplifiers

419

where r is the time constant of the integrator. Here f is the clock frequency, equal to IIT. For input frequencies that are much less than the clock frequency, the quantity oT is much less than unity, and the right-most term in parentheses in (6.39) reduces to unity. The remaining term is simply the frequency response of an analog integrator, as desired. In practical designs, the excess phase and magnitude error contributed by the term in parentheses in (6.39) must often be taken into account. From a conceptual standpoint, however, the circuit can be thought of as providing an analog integration of the signal. Note that the time constant of the integrator is the same as would occur if the sampling capacitor and switches were replaced by a continuous-value resistor of value l/(f C S ) .This equivalence is illustrated in Fig. 6.10~. A key advantage of a switched-capacitor integrator compared to its continuous-time counterpart is that the time constant of the switched-capacitor integrator can be much better controlled in practice. The time constant of a continuous-time integrator depends on the product of a resistance and a capacitance as in (6.22). In monolithic technologies, resistance and capacitance values do not track each other. Therefore, the time constant of a continuous-time integrator is not well controlled over variations in process, supply, and temperature in general. However, the time constant of a switched-capacitor integrator is determined by the ratio of two capacitor values and the clock frequency, as in (6.40). If the two capacitors have the same properties, the ratio is well controlled even when the absolute values are poorly controlled. Since the clock frequency can be precisely determined by a crystal-controlled clock generator, the time constant of a switched-capacitor integrator can be well controlled in monolithic technologies. A key requirement for the op amps in Figs. 6 . 9 ~and 6 . 1 0 ~is that dc currents at the input terminals must be extremely small to minimize the loss of charge over the time when the above analyses assumed that charge was conserved. Therefore, switched-capacitor amplifiers and integrators are ideally suited to the use of op amps with MOS transistors in the input stage.

6.2 Deviations from ldeality in Real Operational Amplifiers Real op amps deviate from ideal behavior in significant ways. The main effects of these deviations are to limit the frequency range of the signals that can be accurately amplified, to place a lower limit on the magnitude of dc signals that can be detected, and to place an upper limit on the magnitudes of the impedance of the passive elements that can be used in the feedback network with the amplifier. This section summarizes the most important deviations from ideality and their effects in applications. 6.2.1 Input Bias Current An input stage for a bipolar transistor op amp is shown in Fig. 6.11. Here Ql and Q2 are the input transistors of the amplifier. The base currents of Ql and Q2 flow into the amplifier input terminals, and the input bias current is defined as the average of the two input currents:

Nonzero bias current violates the assumption made in summing-point analysis that the current into the input terminals is zero. Typical magnitudes for the bias current are 10 to 100 nA for bipolar input devices and less than 0.001 pA for MOS input devices. In dc

420

Chapter 6

W

OperationalAmplifiers with Single-EndedOutputs

Figure 6.1 1 Typical op-amp input

stage.

inverting and noninverting amplifiers, this bias current can cause undesired voltage drops in the resistors forming the feedback network, with the result that a residual dc voltage appears at the output when the amplifier is ideal in all other ways and the external input voltage is zero. In integrator circuits, the input bias current is indistinguishable from the current being integrated and causes the output voltage to change at a constant rate even when V, is zero. To the extent that the currents are equal in the two input leads, however, their effects can be canceled in some applications by including a balancing resistor in series with one of the input leads so that the same resistance is seen looking away from each op-amp input. For example, the differential amplifier of Fig. 6.4 produces zero output with V1 = V2 = 0 if identical currents flow in both op-amp input leads. In practice, however, the two input currents are not exactly equal because of random mismatches, causing nonzero output in Fig. 6.4 when V1 = V2 = 0. 6.2.2 Input Offset Current

For the emitter-coupled pair shown in Fig. 6.11, the two input bias currents will be equal only if the two transistors have equal betas. Geometrically identical devices on the same IC die typically display beta mismatches that are described by a normal distribution with a standard deviation of a few percent of the mean value. Since this mismatch in the two currents varies randomly from circuit to circuit, it cannot be compensated by a fixed resistor. This aspect of op-amp performance is characterized by the input offset current, defined as

Consider the differential amplifier in Fig. 6.4. Repeating the analysis in Section 6.1.4 for that circuit with nonzero Ios and V1 = V 2 = 0 gives a dc output voltage of

If Ios = 0, then V. = 0 here. This equation shows that the error in the dc output voltage is proportional to both the input offset current and the feedback resistance under these conditions. The key point is that the size of the feedback resistance is limited by the maximum offset current that can arise and by the allowed error in the dc output voltage in practice. See Problem 6.6.


421

6.2.3 lnput Offset Voltage

As described in Chapter 3, mismatches result in nonzero input offset voltage in amplifiers. The input offset -- voltage - --. is the differential"-input that must b,e,emliedl~.drbe the - voltage -- . -output to-zero. For unti'imme6monoiithic op amps, this offset is typically 0. l to 2 mV for bpolar input__d_efic_es-and1 to mV for MOS inpit devices. This offset can be nulled - --- ----- 20-. with an external potentiometer in the case of stand-alone op amps; however, the variation of offset with temperature (called drzfi) does not necessarily go to zero when the input offset is nulled. In dc amplifier applications, the offset and drift place a lower limit on the magnitude of the dc voltage that can be accurately amplified. In some sampled-data applications such as switched-capacitor filters, the input offset voltage of the op amp is sampled and stored on the capacitors every clock cycle. Thus the input offset is effectively canceled and is not a critical parameter. This same principle is used in chopper-stabilized op amps. --v

-m-

_____ I

-U

- m .

"

6.2.4 Common-Mode lnput Range

The common-mode input range is the range of dc common-mode input voltages for which all transistors in the first stage of an op amp operate in the forward-active region. Over this range, the op amp behaves normally with its offset voltage and input bias current within specifications. Including one or both power-supply voltages in the common-mode input range is sometimes important. 6.2.5 Common-Mode Rejection Ratio (CMRR)

If an op amp has a differential input and a single-ended output, its small-signal output voltage can be described in terms of its differential and common-mode input voltages (vid and vic) by the following equation where Ad, is the differential-mode gain and A,, is the common-mode gain. As defined in (3.1U), the common-mode rejection ratio of the op amp is

/ 1

Adm CMRR = A,,

From an applications standpoint, the CMRR can be regarded as t h e ~ h a n g ein input offset voltage that results from a unit change in common-mode input For example, .-.*... voltage. . ~assume that we apply zero common-mode input voltage to the amplifier and then apply just enough differential voltage to the input to drive the output voltage to zero. The dc voltage we have applied is just the input offset voltage Vos. If we keep the applied differential voltage constant and increase the common-mode input voltage by an amount AVic, the output voltage will change, by an amount

I__

W

To drive the output voltage back to zero, we will have to change the differential input voltage by an amount

Thus we can regard the effect of finite CMRR as causing a change in the input offset voltage whenever the common-mode input voltage is changed. Using (6.45) and (6.47),

422 Chapter 6

OperationalAmplifiers with Single-Ended Outputs

we obtain

In circuits such as the differential amplifier of Fig. 6.11, an offset voltage is produced that is a function of the common-mode signal input, producing a voltage at the output that is indistinguishable from the desired signal. For a common-mode rejection ratio of 104 (or 80 dB), (6.48) shows that a 10-V common-mode signal produces a l-mV change in the input offset voltage.

6.2.6 Power-Supply Rejection Ratio (PSRR) In (6.44), we assumed that the power-supply voltages are constant so that the op-amp output voltage depends only on the differential'and common-mode input voltages provided to the op amp. In practice, however, the power-supply voltages are not exactly constant, and variations in the power-supply voltages contribute to the op-amp output. Figure 6.12 shows a block diagram of an op amp with varying power-supply voltages. The small-signal variation on the positive and negative power supplies is vdd and v,,, respectively. If vi, = 0 is assumed for simplicity, the resulting small-signal op-amp output voltage is

where A+ and A are the small-signal gains from the positive and negative powersupplies to the output, respectively. Since op amps should be sensitive to changes in their this differential-mode input voltage but insensitive to changes in their supply voltages, equation is rewritten below in a form that simplifies comparison of these gains: -

where

PSRR+

=

Adm A+

-

and

PSRR

Adm A-

= -

Figure 6.12 Block diagram of an op amp with varying power-supply voltages.

-

-

.-p


Vdd

vsS

PSRR*

PSRR-

423

"DD

-'r

Figure 6.13 Block diagram of an op amp with supply variations modeled in the input differential loop and with vi, = 0.

Figure 6.13 shows one way to interpret (6.50), where the diagram in Fig. 6.12 is redrawn using an op amp with constant power supplies. To set the output in Fig. 6.13 equal to that in Fig. 6.12, the power-supply variations from Fig. 6.12 are included as equivalent differential inputs in Fig. 6.13. Equation 6.50 and Fig. 6.13 show that the power-supply rejection ratios should be maximized to minimize the undesired contributions to the op-amp output voltage. In practice, the power-supply rejection ratios are functions of frequency and often 7 -. d~gegs,e f~ gcreae= frecquency, Power-supply rejection ratio has become an increasingly important parameter in MOS amplifierdesign as the level of integration increases. With small-scale integration, few tran&&ors could be integrated on one integrated circuit. Therefore, analog and digital functions were isolated from each other on separate chips, avoiding some coupling from the digital circuits to the analog supplies. Also, such separation provides an opportunity to filter interference generated by the digital circuits at the printed-circuit-board level w j t t external capacitors connected in parallel with the supplies, With large-scale integration, however, many transistors can be integrated on one integrated circuit. Integrating analog and digital functions on the same chip reduces cost but increases the coupling from the digital circuits to the analog supplies. In principle, monolithicfilter __ _-capxitarscan be used to reduce the resulting supply variations; however, the required areas of such capacitors are large in practice. For example, if the oxide thickness is 100 A,the capacitance per unit area is 3.45 Wpm2. For a capacitor of 0.01 ~ . L(a F commonly used value to filter supplies on printed-circuit boards), the required area is 1.7 mm2. Since many integrated circuits occupy areas less than 100 mm2, this single capacitor would account for a significant fraction of the cost of many integrated circuits. To reduce the cost, instead of concentrating only on reducing supply variations through filtering, another option is to build circuits with low sensitivities to power-supply variations. The use of fully differential circuit techniques has emerged as an important tool in this effort. Fully differential circuits represent all signals of interest as differences between two corresponding quantities such as voltages or currents. If two identical signal paths are used to determine corresponding quantities, and if the coupling from supply variations to one quantity is the same as to the other quantity, the difference can be independent of the supply variations and the coupling in principle. In practice, mismatches cause differences in the two signal paths, and the coupling may not be identical, causing imperfect cancellation. Also, if the power-supply noise is large enough, nonlinearity may result and limit the extent of the cancellation. Although the op amps considered in this chapter have differential inputs, they are not fully differential because their outputs are single-ended. Fully differential op amps are considered in Chapter 12.

424

Chapter 6


6.2.7 Input Resistance

In bipolar transistor input stages, the input resistance is typically in the 100 kCl to l MO range. Usually, however, the voltage gain is large enough that this input resistance has little effect on circuit performance in closed-loop feedback configurations. Op amps whose inputs are connected to the gates of MOS transistors _ have e s s-entm--. infinite input resistance in principle. In practice, however, MOS-transistor gates connected through package pins to the outsideworld must be protected against damage by static electricity. This protection is typically achieved by connecting back-biased clamping diodes from VDDand Vss to the gate, and thus the effective input leakage currents are determined by junction leakage and are of the order of picoamps. However, protection is required only at the inputs and outputs of integrated circuits. In internal applications, where op-amp inputs are not connected to the external pins of an integrated circuit, protection is not required and op amps with MOS transistor gates as inputs do realize ultra-high input resistance. XI

6.2.8 Output Resistance

General-purpose bipolar op amps usually use a buffer as an output stage, which typically, produces an output resistance on thkordder of 40 Cl to 100 Cl. On the other hand, - .-- in MOS technologies, internal op amps usually do not have to drive resistive loads. T h e r e s i c internal MOS op amps usually do not use a buffer output stage, and the resulting output resistance can be much larger than in the bipolar case. In both cases, however, the output resistance does not strongly affect the closed-loop performance except as it affects stability under large capacitive loading, and in the case of power op amps that must drive a small load resistance.

6.2.9 Frequency Response Because of the capacitances associated with devices in the op amp, the voltage gain decreases at high frequencies. This fall-off must usually be controlled by the addition of extra capacitance, called compensation capacitance, to ensure that the circuit does not oscillate when connected in a feedback loop. (See Chapter 9.) This aspect of op-amp behavior is characterized by the unity-gain bandwidth, which is the frequency at which the magnitude of the open-loop voltage gain is equal to unity. For general-purpose amplifiers, this frequency is typically in the 1 to 100 MHz range. This topic is considered in detail in Chapters 7 and 9. A second aspect of op-amp high-frequency behavior is a limitation of the rate at which the output voltage can change under large-signal conditions. This limitation stems from the limited current available within the circuit to charge the compensation capacitor. This maximum rate, called the slew rate, is described more extensively in Chapter 9. 6.2.10 Operational-Amplifier Equivalent Circuit

The effect of some of these deviations from ideality on the low-frequency performance of an op amp in a particular application can be calculated using the equivalent circuit shown in Fig. 6.14. (This model does not include the effects of finite PSRR or CMRR.) Here, the represent the average value of dc current flowing into the two current sources labeled IBIAS input terminals. The polarity of these current sources shown in Fig. 6.14 applies for an npn transistor input stage. The current source labeled Ios represents the diference between the currents flowing into the amplifier terminals. For example, if a particular circuit displayed

.

6.3 Basic Two-Stage MOS Operational Amplifiers 425

Figure 6.14 Equivalent circuit for the operational amplifier including input offset voltage and current, input and output resistance, and voltage gain.

a current of 1.5 p A flowing into the noninverting input terminal and a current of 1 p A flowing into the inverting input terminal, then the value of IBIAs in Fig. 6.14 would be 1.25 pA, and the value of Ios would be 0.5 FA.

6.3 Basic Two-Stage MOS Operational Amplifiers Figure 6.15 shows a schematic of a basic two-stage CMOS op amp.4~5*6 A differential input stage drives an active load followed by a second gain stage. An output stage is usually not used but may be added for driving heavy loads off-chip. This circuit configuration provides good common-mode range, output swing, voltage gain, and CMRR in a simple circuit that

Figure 6.15 Basic two-stage CMOS operational amplifier.

426 Chapter 6


+ss

Figure 6.16 Moredetailed schematic diagram of a typical twostage CMOS operational amplifier.

can be compensated with a single capacitor. The circuit is redrawn in Fig. 6.16, where the ideal current sources are replaced with transistor current mirrors. In this section, we will analyze the various performance parameters of this CMOS op-amp circuit. 6.3.1 Input Resistance, Output Resistance, and Open-Circuit Voltage Gain

The first stage in Fig. 6.16 consists of a p-channel differential pair MI-M2 with an nchannel current mirror load M3-M4 and a p-channel @ j 4 m s a w c e M5. The second stage consists of an n-channel common-source amplifier M6 with a ;channel currentsource load MT. Because the op-amp inputs are connected to the gates of MOS transistors, the input resistance is essentially infinite when the op amp is used in internal applications, which do not require the protection diodes described in Section 6.2.7. For the same reason, the input resistance of the second stage of the op amp is also essentially infinite. The output resistance is the resistance looking back into the second stage with the op-amp inputs connected to small-signal ground:

Although this output resistance is almost always much larger than in general-purpose bipolar op amps, low output resistance is usually not required when driving purely-capacitive loads. Since the input resistance of the second stage is essentially infinite, the voltage gain of the amplifier in Fig. 6.16 can be found by considering the two stages separately. The first stage is precisely the same configuration as that considered in Section 4.3.5. The smallsignal voltage gain is ..-

.

V -

6.3 Basic Two-Stage MOS Operational Amplifiers

427

where Gml and R,, are the transconductance and output resistance of the first stage, respectively. From (4.143) and (4.149), Similarly, the second-stage voltage gain is where R, is given in (6.52). As a result, the overall gain of the amplifier is AV = AvlAv2 . __ -

=

-gm1 (~02IIro4)gm6(ro6llr07)

(6.56)

This equation shows that the overall gain is related to the quantity (g,ro)2. Recall from (3.27) that

Therefore, the overall voltage gain is a strong function of the Early voltage (which is proportional to the effective channel length) and the overdrive (which is set by the bias conditions). rn

EXAMPLE Calculate the gain of the op amp in Fig. 6.16 assuming that it uses the 0.8-km process technology described in Table 2.3. Also, assume that Leff = 0.8 k m and IV,,I = /vGS V*l = 0.2 V for all devices. Let ID2, ID4, ID6, and ID7represent the bias currents flowing into the drains of M 2 , M4, M6, and M7, respectively. Since ID4= -ID2and ID7 = -ID6, (6.56) shows that

where the absolute-value function has been used so that each quantity in (6.58) is positive. From (1.181), A,,

=

-

(

)(

)

2 2 V A ~ V A ~ v~61v.47 IVovll Vov6 IV,42(+ VA4 V A + ~ IVA~I

because ID,= ID2with zero differential input. From (1.163),

Substituting (6.60) into (6.59) with the given data and dXd/dVDs from Table 2.3 gives

428 Chapter 6


The overall gain can be increased by either increasing the channel lengths of the devices to increase the Early voltages or by reducing the bias current to reduce the overdrives.

6.3.2 Output Swing

+

The output swing is defined to be the range of output voltages V , = V. v, for which all transistors operate in the active regionso that the gain calculated in (6.56)is approximately constant. From inspection of Fig. 6.16, M6 operates in the triode region if the output voltage is less than Vov6- VSS.Similarly, M7 operates in the triode region if the output voltage is more than VDD- I Vnv71. Therefore, the output swing is This inequality shows that the op amp can provide high gain while its output voltage swings within one overdrive of each supply. Beyond these limits, one of the output transistors enters the triode region, where the overall gain of the amplifier would be greatly diminished. As a result, the output swing can be increased by reducing theovgdfiyxsof the output transistors. 6.3.3 Input Offset Voltage In Sections 3.5.6 and 6.2.3, the input offset voltage of a differential amplifier was defined as the differential input voltage for which the differential output voltage-.is zero.-. Because the op amp in Fig. 6.16 has a single-ended output, this definition must be modified here. Referring to the voltage between the output node and ground as the output voltage, the most straightforward modification is to define the input offset voltage of the op amp as the differential input voltage for which the op-amp output voltage is zero. This definition is reasonable if VDD= Vss because setting the output voltage to zero maximizes the allowed variation in the output voltage before one transistor operates in the triode region provided that Vov6= IVov71.If VDD# Vss, however, the output voltage should be set midway between the supply voltages to maximize the output swing. Therefore, we will define the input offset voltage of op amps with differential inputs and single-ended outputs as the differential input voltage for which the dc output voltage is midway between the supplies. The offset voltage of an op amp is composed of two components: the systematic offset and the random offset. The former results from the design of the circuit and is present even when all the matched devices in the circuit are identical. The latter results from mismatches in supposedly identical pairs of devices. Systematic Offset Voltage. In bipolar technologies, the gain of each stage in an op amp

can be quite high (on the order of 500) because the g,r, product is usually greater than 1000. As a result, the input-referred offset voltage of a bipolar op amp usually depends mainly on the design of the first stage. In MOS technologies, however, the g,r, product is usually between about 20 and 100, reducing the gain per stage and sometimes causing the offset of the second stage to play an important role in determining the op-amp offset voltage. To study the systematic offset, Fig. 6.17 shows the op amp of Fig. 6.16 split into two separate stages. If the inputs of the first stage are grounded, and if the matching is perfect, then the dc drain-source voltage of M4 must be equal to the dc drain-source voltage of M 3 . This result stems from the observation that if VDS3 = VDS4,then VDsl = VDS2and ID, = ID2 = ID5/2.Therefore, with VDS3 = VDS4,ID3 = ID4 = -ID5/2. AS a result, VDS3must be equal to VDS4because this operating point is the only point for which the


429

F

J

M 2 1 ~ .

4

tJ0

0

0

+

-%S

Figure 6.17 Two-stage amplifier with first and second stages disconnected to show the effect of interstage coupling on inputreferred offset voltage.

current flowing out of the drain of M2 is equal to the current flowing into the drain of M 4 . For example, increasing the drain-source voltage of M4 would increase the current flowing into the drain of M4 but decrease the current flowing out of the drain of M2 because of the effects of channel-length modulation. Therefore, the dc drain-source voltages of M3 and M4 must be equal under these conditions. On the other hand, the value of the gate-source voltage of M6 required to set the amplifier output voltage midway between the supplies may differ from the dc output voltage of the first stage. If the first stage gain is 50, for example, each 50-mV difference in these voltages results in 1 mV of input-referred systematic offset. Ignoring channel-length modulation in M5 and M7, the current in these transistors is independent of their drain-source voltages if they operate in the active region. To set the output voltage midway between the supplies, the gate-source voltage of M6 should be chosen so that the drain current of M6 is equal to the drain current of M7 while both transistors operate in the active region. When the input of the second stage is connected to the output of the first stage, VGS6= VDS4. With perfect matching and zero input voltages, VDS4 = VDS3= VGS3and Vt3 = Vt4 = Vt6. Therefore, is required. Substituting (1.166) into (6.62)gives

In other words, requiring that the transistors have equal overdrives is equivalent to requiring that they have equal drain-current-to-W11 ratios (or current densities). Since ID3= ID^ = lJ~51/2and 106 = 11~71,

Since Ms and M7 have equal gate-source voltages,

430

Chapter 6 r Operational Amplifiers with Single-Ended Outputs


With the aspect ratios chosen to satisfy (6.66), M3, M4, and M6 operate with equal current densities. In the active region, the current density of a device depends not only on its gate-source voltage, but also on its drain-source voltage to some extent. Since the gate-source voltages and current densities of M 3 , M4, and M6 are equal, the drain-source voltages of these transistors must also be equal. Therefore, the dc output voltage under these conditions is

To find the systematic offset voltage at the op-amp output, a voltage midway between the supplies should be subtracted from the output voltage in (6.67). To refer the systematic offset voltage to the op-amp input, this difference should be divided by the op-amp gain. The result is

where A, is the op-amp gain given in (6.56). In most cases, the dc output voltage will not be midway between the supplies because VGS3 = Vt3+ VovS# (VDD+ VSS)/2. Therefore, the systematic offset is usually nonzero. Although the systematic offset voltage is nonzero in general, the choice of aspect ratios as given in (6.66) can result in an operating point that is insensitive to process variations, as explained next. Equation 2.35 shows that the effective channel length of a MOS transistor differs from its drawn length by offset terms caused by the side diffusion of the source and drain (Ld) and the depletion region width around the drain ( X d ) . Similarly, the effective width of a MOS transistor differs from the drawn width by an offset term dW caused by the bird'sbeak effect in the oxide described in Section 2.9.1. To keep the ratio in (6.66) constant in the presence of process-induced variations in Ld, Xd, and dW, the drawn channel lengths and widths of the ratioed transistors can each be chosen to be identical. In this case, the ratio in (6.66) can be set equal to any rational number J I K by connecting J identical devices called n-channel units in parallel to form M3 and M4 while K n-channel units in parallel form M6. Then if M5 is constructed of 2J identical devices calledp-channel units, M7 should be constructed from K p-channel units. In practice for matched devices, the channel lengths are almost never ratioed directly because the use of small channel lengths for high-speed operation would result in a large sensitivity to process variations. On the other hand, the channel widths of matched devices are sometimes ratioed directly when the width is large enough to make the resulting sensitivity to process variations insignificant. A key point of this analysis is that the use of identical channel lengths for M3, M4, and M6 conflicts with a combination of other requirements. First, for stability reasons described in Chapter 9, M6 should have a large transconductance and thus a short channel length. Second, for low noise and random input offset voltage, M g and M4 should have a small transconductance and therefore a long channel length. Noise is considered in Chapter 11, and random input offset voltage is considered next. Random Input Offset Voltage. As described in Section 3.5.6, source-coupled pairs gener-

ally display a higher random offset than their bipolar counterparts. Ignoring the contribution of the second stage in the op amp to the input-referred random offset, a straightforward


43 1

analysis for the offset voltage of the circuit of Fig. 6.16, which is analogous to the analysis leading to (3.248), gives

The first term represents the threshold mismatch of the input transistors. The second is the threshold mismatch of the current-mirror-load devices and is minimized by choosing the WIL ratio of the load devices so that their transconductance is small compared to that of the input transistors. For this reason, selecting a longer channel length for M, and M4 than for M 1 and M2 reduces the random input offset voltage. The third term represents the effects of WIL mismatches in the input transistors and loads and is minimized by operating the input transistors at low values of overdrive, typically on the order of 50 to 200 mV. 6.3.4 Common-Mode Rejection Ratio For the op amp in Fig. 6.16, (6.45) gives

where CMRRl is the common-mode rejection ratio of the first stage. The second stage does not contribute to the common-mode rejection ratio of the op amp because the second stage has a single-ended input and a single-ended output. In (4.182) and (4.183), the common-mode rejection ratio of a stage with a differential pair and a current-mirror load was calculated assuming perfect matching. Applying (4.183) here gives

where g m ( d p ) and r,(d,) are the transconductance and output resistance of M1 and M 2 , gm(rnir)and ro(mjr) are the transconductance and output resistance of M , and M4, and r,,il is the output resistance of M s . By a process similar to the derivation of (6.59), this equation can be simplified to give

where Vov(dp)and VA(dp) are the overdrive and Early voltage of the differential pair, and Vov(n,ir)and VA(mir)are the overdrive and Early voltage of the mirror. Equation 6.72 shows that the common-mode rejection ratio of the op amp can be increased by reducing the overdrive voltages. Another way to increase the common-mode rejection ratio is to replace the simple current mirror Ms and M8 with one of the high-output-resistance current mirrors considered in Chapter 4. Unfortunately. such a replacement would also worsen the common-mode input range.

432 Chapter 6


6.3.5 Common-Mode Input Range

The common-mode input range is the range of dc common-mode input voltages for which all transistors in the first stage of the op amp operate in the active region. To operate in the active region, the gate-drain voltages of n-channel transistors must be less than their thresholds so that their channels do not exist at their drains. Similarly,p-channel transistors operate in the active region only if their gate-drain voltages are more than their thresholds, again so that their channels do not exist at their drains. With a pure common-mode input V I c applied to the inputs of the op amp in Fig. 6.16,

The gate-drain voltage of M1 and M2 is

When V I c is reduced to the point at which VGDl= VGD2= Vtl = Vt2,M1 and M2 operate at the edge between the the triode and active regions. This point defines the lower end of the common-mode range, which is

If Vlc is too high, however, MS operates in the triode region. The drain-source voltage of M5 is

From the standpoint of drain-source voltages, n-channel transistors operate in the active region only if their drain-source voltage is more than their overdrive. On the other hand, p-channel transistors operate in the active region only if their drain-source voltage is less than their overdrive. Therefore, the upper end of the common-mode input range is Since M1 and Ms are p-channel transistors, their overdrives are negative; that is, their gate-source voltages must be less than their thresholds for the channel to exist at the source. Furthermore, if M1 is an enhancement-mode device, its threshold is negative because it is p-type. Under this assumption, the common-mode range limits in (6.75) and (6.77) can be rewritten as

This inequality shows that the magnitudes of the overdrive terms should be minimized to maximize the common-mode range. Also, the body effect on the input transistors can be used to increase the range. If the bodies of M1 and M:! are connected to VDDas implied in Fig. 6.16, the source-body voltage of these transistors is low when Vlc is high. Therefore, the upper limit in (6.78) can be found approximately by using the zero-bias value of V t l . On the other hand, when Vlc decreases, the source-body voltage of M1 and M2 becomes more negative, widening the depletion region around the source and making the threshold voltage of these transistors more negative. Therefore, the body effect can be used to include the negative supply in the common-mode range. EXAMPLE

For the two-stage CMOS op amp in Fig. 6.16, choose the device sizes to give a dc voltage gain greater than 5000 and a peak output swing of at least 1 V. Use the 0.4 p m CMOS


433

model parameters in Table 2.4. Use bias currents of IZD1 I = 11D21 = 100 pA, and ID6= 400 pA. Assume VDD = Vss = 1.65 V +- 0.15 V. Assume perfect matching and that all transistors operate in the active (or saturation) region with dc voltages VIc = 0 (where Vlc is the common-mode input voltage), VI = 0 and V. 0. Ignore the body effect. To simplify the design, a drawn channel length L = 1 p m will be used for all transistors. This selection avoids short-channel effects that degrade output resistance and cause transistor operation to deviate from the square-law equations. Since the peak output swing should be 1 V and the magnitude of each supply is at least 1.5 V, (6.61) shows that

-

To maximize the transition frequency fT of each device subject to this constraint, we will 1 = 106 = 400 p A gives choose Vov6 = I Vov71 = 0.5 V. Using (1.157) with lID7

and

Since VovS= Vov7by KVL and

+ ZD2

=

From (6.66),

Since the common-mode input range should include Vlc = 0, the allowed overdrives on M 1 and M2 are limited by (6.771, and rearranging this equation with VIc = 0 and VoD = 1.5 V gives

Therefore,

From (6.59) and (6.60) with Leff = Ldrwn- 2Ld, and using data from Table 2.4,

This calculation assumes that dXdldVDs and Leffare constant for each type of transistor, allowing us to use constant Early voltages. In practice, however, dXdldVDs and Leff

434 Chapter 6

rn

m


both depend on the operating point, and accurate values of the Early voltages are rarely available to circuit designers when channel lengths are less than about 1.5 pm. As a result, circuit simulations are an important part of the design process. SPICE simulation of the op amp under the conditions described above gives a gain of about 6200, which shows that the hand calculations are accurate within about 20 percent.

6.3.6 Power-Supply Rejection Ratio (PSRR)

To calculate the PSRR from the V d d supply for the op amp in Fig. 6.16, we will divide the small-signal gain A + = v o h d d into the gain from the input. For this calculation, assume that the V,, supply voltage is constant and that both op-amp inputs in Fig. 6.16 are If this current is connected to small-signal grounds. The current in M8 is equal to IBIAS. constant, the gate-source voltage of M S must be constant because M8 is diode connected. Therefore, v,,~ = v,,~ - v,,7 = 0, and the g, generators in M5 and M7 are inactive. As a result, if r,g = rtail -+ CO and r,7 + m, v o h d d = 0. TOfind the gain with finite r,,il and r,7, consider the small-signal diagrams shown in Fig. 6.18, where the g, generators for M5 and M7 are omitted because they are inactive. In Fig. 6.18a, the output is defined as v,,, and the vdd supply variation is set equal to zero at the point where rt,il is connected. In Fig. 6.18b, the output is defined as v,b, and the vdd supply variation is set equal to zero at the point where ro7 is connected. We will find v,, and v,b separately and use superposition to find the total gain v o h d d = (voa vob)lvdd. In Fig. 6.18a, the first stage experiences no variation, and v& = 0. Therefore, g,6 is inactive, and the output stage appears as a simple voltage divider to the supply variation. Since the dc drain current in M6 is equal and opposite to that in M 7 ,

+

Figure 6.18 Small-signal diagrams of the two-stage op amp used to calculate the coupling from v,(,,to the output ( a )through the second stage and (b) through the first stage.


435

In Fig. 6.18b,

where the first term on the right side represents the gain of the first stage, and the second term represents the gain of the second stage. The vdd input to the first stage in Fig. 6.18b is applied between the top of rtail and ground while the gates of M1 and M2 are grounded. This situation is equivalent to grounding the top of rtail and applying a voltage of - v d d between the gates of M 1 and M2 and ground. In other words, the vdd input in Fig. 6.18b appears as a common-mode input vi, = - v d d to the first stage. Therefore, the gain of the first stage can be expressed as

where Gm[cm]is the common-mode transconductance of the first stage and Rot is the output resistance of the first stage. Substituting (4.149), (4.166), (4.173), and (4.179) into (6.81) gives

Substituting (6.83), (6.55), and (6.52) into (6.80) gives

If Vov3 = Vov6as in (6.62) to control the systematic offset, gm6/gm(rnir) = ID6/1D3. Since the dc drain current in M6 is equal and opposite to that in M?,

because VA5 = VA7 and /ID5(= 21D3.Combining (6.79) and (6.85) gives

for low frequencies with perfect matching because Therefore, from (6.5 l),PSRR+ the coupling from v d d to the output through the first stage cancels that through the second stage. In practice, mismatch can increase the common-mode transconductance of the first stage as shown at the end of Section 4.3.5.3, disrupting this cancellation and decreasing the low-frequency PSRR+ . To calculate the PSRR from the Vs, supply for the op amp in Fig. 6.16, we will calculate the small-signal gain A- = volvss and then normalize to the gain from the input. -+

436

Chapter 6

=


For this calculation, assume that the Vddsupply voltage is constant and that both op-amp inputs in Fig. 6.16 are connected to small-signal grounds. Under these conditions, M1 and M2 act as common-gate amplifiers, attempting to keep the bias current in M3 and M4 constant. If the drain current of M3 is constant, the gate-source voltage of M3 must be constant because M3 is diode connected. Therefore, vgs3 = 0. Since v d s = vg,3, and since vds4 = vds3 under these conditions, vds4 = vgS6 = 0. Therefore, gm6 is inactive, and the output stage appears as a simple voltage divider to the supply variation. Since the drain current in M6 is equal and opposite to that in M7,


PSRR-

=

-

A-

v0

(6.8 8)

This equation gives the low-frequency supply rejection from the negative supply. This rejection worsens as frequency increases. The topic of frequency response is covered in detail in Chapters 7 and 9, but the essence of this behavior can be understood without a complete frequency-response analysis. As the applied frequency increases, the impedance of the compensation capacitor Cc in Fig. 6.16 decreases, effectively shorting the gate of M6 to its drain for high-frequency ac signals. If the gate-source voltage on M6 is constant, the variation on the negative supply is fed directly to the output at high frequencies. Therefore, A- = 1 at frequencies high enough to short circuit Cc, assuming that Cc >> CL, where CL is the load capacitance of the op amp connected between the op-amp output and ground. The same phenomenon causes the gains Admand A+ to decrease as frequency increases, so that the PSRR+ remains relatively constant with increasing frequency. Since A increases to unity as Ad, decreases, however, PSRR- decreases and reaches unity at the frequency where (Adml= 1. Power-Supply Rejection and Supply Capacitance. Another important contribution to nonzero gain between the power supplies and the op-amp output is termed supply ~ a ~ a c i t a n c eThis . ~ . ~phenomenon manifests itself as a capacitive coupling between one or both of the power supplies and the op-amp input leads when the op amp is connected with capacitive feedback Cl as shown in Fig. 6.19. For simplicity, assume that the opamp open-loop gain is infinite. If the supply-coupling capacitance is C,,,, the gain from C,,,, to the op-amp output is -CsuplCI.Figure 6.19 shows two possible sources of supply capacitance, which are the gate-drain and gate-source capacitance of M 1 . Four important ways in which supply capacitance can occur are described below.

1. If the drain current of M3 is constant, a variation on Vs, causes the voltage from the drain of M1 to ground to vary to hold the gate-source voltage of M3 constant. This variation couples to the summing node through the gate-drain capacitance of M 1; that is, the supply capacitance CSup= Cgdl.This problem is usually overcome by the use of cascode transistors in series with the drains of the input transistors. 2. A variation on Vddor V,, causes the current flowing in the tail current source to vary. To understand the effect of this bias-current variation, consider Fig. 6.20a, which shows a


437

Figure 6.19 Supply capacitance in a two-stage MOS amplifier with capacitive feedback.

+

p-channel source follower whose biasing current source Itail = ITAIL itailis not constant. The source follower models the behavior of M 1in Fig. 6.19 from the standpoint of variation in Itailfor two reasons. First, the voltage from the gate of M1 to ground is held to small-signal ground by negative feedback. Second, MOS transistors that operate in the active region are controlled mainly by their gate-source voltages. For simplicity, ignore the body effect because it is not needed to demonstrate the problem here. The small-signal diagram of the source follower is shown in Fig. 6.20b. From KCL at the source,

Rearranging this equation gives itail ro hail -(6.90) l+gd-0 g, Therefore, nonzero itdl arising from supply variations causes nonzero v, in the source follower. Similarly, in Fig. 6.19, the voltage from the source of M 1 to ground varies

v,

=

'

Figure 6.20 (a) Source follower

and (b) small-signal diagram to calculate the dependence of v, on itail.

438

Chapter 6


with Itail,and this variation couples to the summing node through the gate-source capacitance of M 1 ; that is, the supply capacitance Csup= Cgsl.A supply-independent bias reference is usually used to overcome this problem. 3. If the substrate terminal of the input transistors is connected to a supply or a supplyrelated voltage, then the substrate bias changes as the supply voltage changes. In turn, substrate bias variation changes the threshold through the body effect, which changes the gate-source voltage. Again, this mechanism can be studied with the help of a source follower, as shown in Fig. 6.21a. Here ITAZis assumed to be constant, but Vdd = VDD+ vdd is assumed to vary. The small-signal diagram is shown in Fig. 6.21b. From KCL at the source,

Rearranging this equation gives

Therefore, nonzero vdd in the source follower in Fig. 6.21 causes nonzero v,. Similarly, in Fig. 6.19, the voltage from the source of M1 to ground varies with Vdd, and this variation couples to the summing node through the gate-source capacitance of M 1;that is, the supply capacitance CSup= Cgsl. A solution to this problem is to place the input transistors in a well and connect the well to the sources of the input transistors to eliminate the body effect. This solution has two potential disadvantages. First, it disallows the use of the body effect on the input devices to increase the common-mode input range of the op amp, as described in Section 6.3.5. Second, this solution dictates the polarity of the input transistors in a given process. For example, in a p-well process, the input devices must be n-channel devices to place them in a p well. This requirement might conflict with the polarity of the input transistors that would be chosen for other reasons. For example, p-channel input transistors would be used to minimize the input-referred flicker noise. (See Chapter 11 .) 4. Interconnect crossovers in the op-amp and system layout can produce undesired capacitive coupling between the supplies and the summing node. In this case, the supply capacitance is a parasitic or undesired capacitance. This problem is usually overcome

Figure 6.21 ( a ) Source follower and (b) small-signal diagram to calculate the dependence of v, on vdd

through the body effect.


439

with careful layout. In particular, one important layout technique is to shield the op-amp inputs with metal lines connected to ground. The result of supply capacitance can be quite poor power-supply rejection in switchedcapacitor filters and other sampled-data analog circuits that use capacitive feedback. In addition to the solutions to this problem mentioned above, another solution is to use fully differential op amps, which have two outputs. The output voltage of interest is the voltage difference between these outputs. Fully differential op amps, which are considered in Chapter 12, overcome the supply capacitance problem to the extent that the coupling from a given supply to one output is the same as to the other output.

6.3.7 Effect of Overdrive Voltages The overdrive of a MOS transistor can be reduced by reducing the ratio of its drain current to its WIL. Reducing the overdrive voltages in the op amp in Fig. 6.16 improves the op-amp performance by increasing the voltage gain as shown by (6.59), increasing the swing as shown by (6.61), reducing the input offset voltage as shown by (6.69), increasing the CMRR as shown by (6.72), increasing the common-mode range as shown by (6.78), and increasing the power-supply rejection ratio as shown by (6.88). These observations are valid provided that the transistors in the op amp operate in strong inversion. Also, increasing the channel lengths increases the corresponding Early voltages as shown by (1.163), and thereby increases the op-amp gain, common-mode rejection ratio, and power-supply rejection ratio as shown by (6.59), (6.72), and (6.88). Unfortunately, the transition frequency of MOS transistors is proportional to the overdrive and inversely proportional to the square of the channel length from (1.209). Therefore, reducing overdrives and increasing the channel lengths degrades the frequency response of the transistors and in turn the amplifier. Thus we find a fundamental tradeoff between the frequency response and the other measures of performance in CMOS op-amp design.

6.3.8 Layout Considerations

A basic objective in op-amp design is to minimize the mismatch between the two signal paths in the input differential pair so that common-mode input signals are rejected to the greatest possible extent. Mismatch affects the performance of the differential pair not only at dc, where it causes nonzero offset voltage, but also at high frequencies where it reduces the common-mode and power-supply rejection ratios. Figure 6 . 2 2 shows ~ a possible layout of a differential pair. Five nodes are labeled: two gates, two drains, and one source. Connections to each region are omitted for simplicity. The sources of the two transistors are connected to each other by merging the two sources together into one diffusion region. Although such a layout saves area and minimizes undesired capacitance connected to the sources. this layout is not optimum from the standpoint of matching in part because it is sensitive to alignment shifts between masks that define various layers in an integrated circuit. The key problem is that the layout in Fig. 6 . 2 2 ~ ~ uses only mirror symmetry in the sense that each transistor is a mirror image of the other. For example, suppose that two additional grounded segments of metal are added to the layout to produce the layout shown in Fig. 6.2227. In exactly these locations, the parasitic capacitance Cpl from D 1to ground is equal to the parasitic capacitance CP2from D2 to ground. However, if the mask that defines the metal shifts to the right compared to the mask that defines the diffusion, C p l increases but Cp2decreases, creating mismatch. In

440 Chapter 6


Figure 6.22 Differential-pair layouts with mirror symmetry.

practice, balancing the parasitics in a way that is insensitive to alignment shifts is most important in amplifiers that have both differential inputs and differential outputs. Such amplifiers are considered in Chapter 12. , transisFigure 6.23 shows layouts that overcome these problems. In Fig. 6 . 2 3 ~ - bthe tors are drawn using translational symmetry; that is, each transistor is a copy of the other without rotation. Another option is shown in Fig. 6.23c, where each transistor has been split into two pieces. To maintain the same widthllength ratio as in the previous drawings, the width of each transistor in Fig. 6 . 2 3 has ~ been reduced by a factor of two. This structure has both translational and mirror symmetry. Structures with translational symmetry are insensitive to alignment shifts. One limitation of these layouts is that they are sensitive to process gradients perpendicular to the line of symmetry. For example, in Fig. 6.23c, suppose the oxide thickness increases from left to right. Then the gate stripes connected to G1 have thinner oxide than those connected to G2, causing the transistors to have unequal thresholds and unequal transconductance parameters. The effects of process-related gradients across the die can be partially alleviated by use of common-centroid geometries. Figure 6.24 shows a commoncentroid layout of the differential pair. Each side of the differential pair is split into two components that are cross connected in the layout. In a geometric sense, the centroid of both composite devices lies at center of the structure. Because any gradient can be decomposed into horizontal and vertical components, this layout overcomes the effect of linear process gradients in any direction. Figure 6.24 also shows two layers of metal used to cross connect the devices. One layer of metal is drawn with solid lines. The other is drawn with dashed lines. The two


Figure 6.23

441

Differential-pair layouts with translational symmetry.

layers connect at intersections only where dots are drawn. The interconnect drawn here is shift insensitive and balanced in the sense that any signal line that crosses a node on one side of the differential pair also crosses the corresponding node on the other side. This balance helps to keep undesired signals in common-mode form so they can be rejected by the differential pair. Finally, the only line that crosses the metal connected to the two input gates is the metal line to the sources of the differential pair. This characteristic is important because such crossings create a small parasitic capacitance between the two layers that cross, and can allow undesired signals to couple to the op-amp inputs. Since op amps are designed to have high gain, op-amp inputs are the most sensitive nodes in analog integrated circuits. Therefore, if any signal line is allowed to cross one gate, it should also cross the other to balance the parasitic capacitances. Since the parasitics may not be perfectly matched in practice, however, avoiding crossings is better than balancing them. In Fig. 6.24, the gates are allowed to cross the source of the differential pair because the transistors themselves already provide a large capacitance between each gate and the source in the form of the gate-source capacitance of each transistor. A disadvantage of common-centroid layouts is also apparent in Fig. 6.24. That is, the need to cross-connect the devices increases the separation between matched devices and may worsen matching in cases where linear process gradients are not the main limitation. Therefore, the value of a common-centroid layout must be determined on a case-by-case basis.

442

Chapter 6


Figure 6.24 Common-centroid S

structure for the MOS differential pair.

6.4 Two-Stage MOS Operational Amplifiers with Cascodes The basic two-stage op amp described above is widely used with many variations that optimize certain aspects of the performance. In this section, we consider an important variation on the basic circuit to increase the voltage gain. The voltage gain that is available from the basic circuit shown in Fig. 6.16 may be inadequate in a given application to achieve the required accuracy in the closed-loop gain. For example, suppose the basic op amp uses transistors with g,r, = 20 and is connected in the voltage-follower configuration shown in Fig. 6 . 3 ~The . op-amp gain is given in (6.56) and is less than (g,r,)2 in practice. For simplicity, assume that the op-amp gain is about (g,r,)2, or 400 in this case. The closed-loop gain is given by (6.12) and is approximately unity because R2 = 0 in the follower configuration. The error in this approximation is one part in the op-amp gain or at least 0.25 percent. In precision applications, this error may be too large to meet the given specifications, requiring an increase in the op-amp gain. One approach to increasing the op-amp gain is to add another common-source gain stage to the op amp so that the overall gain is approximately (g,rO)' instead of (g,r0l2. An important problem with this approach, however, stems from the fact that op amps are

6.4 Two-Stage MOS Operational Amplifiers with Cascodes

443

intended to be used in negative-feedback configurations. In practice, op-amp frequency response is not constant. If the op amp introduces an additional phase shift of 180' at some frequency, the negative feedback that was intended becomes positive feedback at that frequency, and the op amp may be unstable. The topics of frequency response and stability are covered in detail in Chapters 7 and 9, respectively. The key point here is that if an op amp is unstable in a given feedback configuration, it does not act as an amplifier but as a latch or oscillator. To avoid this problem, op amps are usually designed with no more than two gain stages because each stage contains a node for which the impedance to ground is high and as a result contributes a significant pole to the op-amp transfer function. Since the phase shift from one pole approaches -90•‹ asymptotically, an op amp with no more than two poles cannot provide the 180•‹phase shift that is required to convert negative feedback into positive feedback. To increase the voltage gain without adding another common-source gain stage, common-gate transistors can be added. Together with a common-source transistor, a cornmon-gate transistor forms a cascode that increases the output resistance and gain of the stage while contributing a less significant pole to the amplifier transfer function than would be contributed by another common-source stage. Figure 6.25 illustrates the use of cascodes to increase the voltage gain of a two-stage amplifier. Here, a series connection of two transistors, one in the common-source connection and one in the common-gate connection, replace each common-source transistor in the first stage. Therefore, M 1 and M I Ain Fig. 6.25 replace M 1 in Fig. 6.16. Similarly, M 2 and M Z Ain Fig. 6.25 replace M2 in Fig. 6.16. Transistor M9 and current source Ic have also been added to bias the gates of M I A and M2,4. In practice, the WIL of M9 is chosen so that M1 and M2 are operated barely in the active region. The effect of these replacements is to increase the unIoaded output impedance of the differential pair by a factor that is approximately equal to g,r, of the cascode device. If the current mirror M3 - M4 were not also cascoded, however, the output resistance of the first stage including the current-mirror load would be limited by the mirror. To overcome this limitation, a cascode current mirror shown in Fig. 4.9 is used instead. As a result,

Figure 6.25 Two-stage amplifier with cascoded first stage.

444 Chapter 6


the stage gain and output resistance including the load are increased by approximately a factor g,r,. In this circuit, Mlo and Mll are included to level shift the output of the first stage down by VGslo so that the second stage input is driven by a signal whose dc level is VGS3 above - Vss. If the aspect ratios are chosen to satisfy (6.66), and if each common-gate transistor is identical to its common-source counterpart, the systematic offset voltage with this level shift is given by (6.68), where the op-amp gain here is on the order of (g,~-,)~ instead of (g,r,)2 in Fig. 6.16. One disadvantage of this circuit is a substantial reduction in the common-mode input range. (See Problem 6.16.) To overcome this problem, cascoding could be added instead to the second stage. In that case, however, the output swing of the op amp would be degraded by the cascodes.

6.5 MOS Telescopic-Cascode Operational Amplifiers As mentioned in the previous section, cascode configurations may be used to increase the voltage gain of CMOS transistor amplifier stages. In many applications, the stage gain can be increased enough so that a single common-source-common-gate stage can provide enough voltage gain to meet the accuracy requirements. The first stage of Fig. 6.25 is sometimes used by itself as an op amp and provides a gain comparable to the gain of the two-stage op-amp in Fig. 6.16. This structure has been called a telescopic-cascode op ampg because the cascodes are connected between the power supplies in series with the transistors in the differential pair, resulting in a structure in which the transistors in each branch are connected along a straight line like the lenses of a refracting telescope. The main potential advantage of telescopic cascode op amps is that they can be designed so that the signal variations are entirely handled by the fastest-polarity transistors in a given process. Such designs use fully differential configurations and are considered in Chapter 12. In addition to the poor common-mode input range calculated in Problem 6.16, another disadvantage of the telescopic-cascode configuration is that the output swing is small. For example, ignore M6, M7, Mlo, MI1, and Cc in Fig. 6.25 and define the dc op-amp output ~ ground. For simplicity, voltage as the voltage Vol from the drains of M2A and M 4 to assume that all transistors are enhancement mode with identical overdrive magnitudes. To calculate the output swing, first consider the cascode current mirror by itself. If Vss = 0, the minimum output voltage for which M4 and M 4 operate ~ in the active region would be given by (4.59). With nonzero Vss, this condition becomes

The presence of a threshold term in this equation is an important limitation because it causes a substantial reduction in the allowed output swing. Fortunately, this limitation can be overcome by using one of the high-swing cascode current mirrors shown in Figs. 4.11 and 4.12, which would eliminate the threshold term from (6.93) and give

With this change, we can see that to achieve a gain comparable to (g,~-,)~in one stage, the swing is limited at best to two overdrives away from the supply. In contrast, the basic two-stage op amp in Fig. 6.16 gives about the same gain but allows the output to swing within one overdrive of each supply, as shown by (6.61). To find the maximum output voltage swing of the telescopic-cascode op amp, consider the cascoded differential pair shown in Fig. 6.25. Assume that the common-mode input

6.5 MOS Telescopic-Cascode Operational Amplifiers

445

from the gates of M 1and M2 to ground is Vlc.The voltage from the source of MI and. M2 to ground is (6.95) V S = V I C+ (hp( + (VovI To operate M5 in the active region, its source-drain voltage should be at least I V,,

I. Therefore,


If we assume that M9 and Ic are chosen to operate M 1 and M2 at the edge of the active region, the maximum output voltage for which M2 and h!t2A operate in the active region is


This equation shows another limitation of the telescopic-cascode op amp from the standpoint of output swing; that is, the maximum output voltage depends on the common-mode input. However, this limitation as well as the limitation on the common-mode input range calculated in Problem 6.16 can be overcome in switched-capacitor circuits. Such circuits allow the op-amp common-mode input voltage to be set to a level that is independent of all other common-mode voltages on the same integrated circuit. This property holds because the only coupling of signals to the op-amp inputs is through capacitors, which conduct zero dc current even with a nonzero dc voltage drop. Assuming that the op-amp inputs are biased to the maximum common-mode input voltage for which MS operates in the active region, the maximum output voltage can be found by substituting the maximum Vlcfrom (6.97) into (6.99), which gives

This equation shows that the maximum output voltage of a telescopic op amp that consists of the first stage of Fig. 6.25 with optimum common-mode input biasing is three overdrives less than the positive supply. This result stems from the observation that three transistors (M5, M2, and M 2 ~are ) connected between VDD and the output. In contrast, (6.94) shows that the minimum output swing is limited by two overdrives. To determine the minimum required supply voltage difference, we will subtract (6.94) from (6.loo), which gives

assuming that the magnitudes of all the overdrives are all equal. Rearranging this equation gives VDD - (-VSS)

=

V~~(rnax) - Vol(rnin) 5IVovl

(6.102)

This equation shows that the minimum difference between the supply voltages in a telescopic cascode op amp must be at least equal to the peak-to-peak output signal swing plus five overdrive voltages to operate all transistors in the active region. For example, with a peak-to-peak output swing of 1 V and IVo,,I = 100 mV for each transistor, the minimum difference between the supply voltages is 1.5 V. In practice, this calculation has two main limitations. First, if transistors are deliberately biased at the edge of the active region, a small change in the process, supply, or

Chapter 6


temperature may cause one or more transistors to operate in the triode region, reducing the output resistance and gain of the op amp. To avoid this problem, transistors in practical op amps are usually biased so that the magnitude of the drain-source voltage of each transistor is more than the corresponding overdrive by a margin of typically at least one hundred millivolts. The margin allowed for each transistor directly adds to the minimum required supply voltage difference. Second, this calculation determines the supply requirements only for transistors between the output node and each supply, and other branches may require a larger supply difference than given in (6.102). For example, consider the path from one supply to the other through MS, M1, MIA,M 3 ~and , M3 in Fig. 6.25. Ignore the body effect for simplicity. Since MgAand M3 are diode connected, the drain-source voltage of each is V, + V,,. Furthermore, if the WIL of M 3 is~ reduced by a factor of four to build the high-swing cascode current mirror shown in Fig. 4.11, the voltage drop from the drain of MSAto the source of M3 is 2Vt + 3V0,. If the other three transistors in this path are biased the required supply difference for all the transistors in this path to so that lVDsl = Iv, I, operate in the active region is 2Vt + 61V,, 1 . This requirement exceeds the requirement given in (6.102) if 2Vt + )Vo,/is more than the peak-to-peak output swing. However, this result does not pose a fundamental limitation to the minimum required power-supply voltage because low-threshold devices are sometimes available. The minimum supply voltage difference in (6.102) includes five overdrive terms. In contrast, the corresponding equation for the op amp in Fig. 6.16 would include only two overdrive terms, one for M6 and the other for M7. The presence of the three extra overdrive terms increases the minimum required supply difference or reduces the allowed overdrives for a given supply difference. The extra three overdrive terms in (6.102) stem from the two cascode devices and the tail current source. The overdrives from the cascodes should be viewed as the cost of using cascodes; however, the overdrive of the tail current source can be eliminated from the minimum required supply difference using the circuit described in the next section.

6.6 MOS Folded-Cascode Operational Amplifiers Figure 6.26 shows two cascode circuits where VDD = 0 for simplicity. In Fig. 6.26a, both M1 and M I Aare p-channel devices. In Fig. 6.26b, M1 is still ap-channel device but M I A

Figure 6.26 ( a )Standard cascode configuration. (b) Folded-cascode configuration.

6.6 MOS Folded-CascodeOperational Amplifiers

447

is now an n-channel device. In both cases, however, M 1 is connected in a common-source configuration, and M I Ais connected in a common-gate configuration. Small-signal variations in the drain current of M 1 are conducted primarily through M I Ain both cases because lBWs is a constant current source. Therefore, both circuits are examples of cascodes. The cascode in Fig. 6.26b is said to be folded in the sense that it reverses the direction of the ~ i ~ a l - f l back o k toward ground. This reversal has two main ackantagks when used-with -a differential pair. First, it increases the output swing. Second, it increases the commonmode input range. Figure 6.27 shows a simplified schematic of a circuit that applies the folded-cascode structure to both sides of a differential pair. As in Fig. 6.266, M1 and M I Aform one cascode structure in Fig. 6.27. Also, M2 and MZAform another. The current mirror converts the differential signal into a single-ended output by sending variations in the drain current of M I Ato the output. The resulting op amp is called afolded-cascode op amp.5j10A complete schematic is shown in Fig. 6.28. Bias is realized by making the currents in current sources M l l and M12 larger than (Iv5)/2.Thus W -

W -

Compared to the other op-amp configurations we have considered, the folded-cascode configuration improves the common-mode input range. The upper end of the range is the same as in the basic two-stage op amp and the telescopic cascode op amp. On the other hand, the lower end of the range can be reduced significantly compared to both other configurations if VBIAs2is adjusted so that M l l and M12 operate at the edge of the active region. Under this condition, the bias voltage from the drain of M 1 to - Vss is V,,11, which can be much less than in the other configurations. See (6.75), (6.77), and Problem 6.18. To calculate the output swing, first consider the p-type cascode current mirror by itself. Since M3 and M j A are diode connected, the voltage from VDD to the gate of M4A is

COMMON Current mirror

I

Figure 6.27 Simplified schematic of a folded-cascode op amp.

448

Chapter 6


-"ss

Figure 6.28 More detailed schematic of a folded-cascode op amp.

21VtpI + 21V,,]. Therefore, the source-drain voltage of M4 is I VtpI + I V,, operate in the active region is output for which both M4 and

1,

and the maximum

This equation is analogous to (6.93) where an n-type cascode current mirror limits the minimum output swing of the telescopic op amp. The threshold term in this equation can be eliminated by using a p-type version of one of the high-swing cascode current mirrors shown in Figs. 4.11 and 4.12. The result is

To find the minimum output voltage, assume that VBIAS2is adjusted so that M I 2operates at the edge of the active region. Then the drain-source voltage of M I 2is V,, and the minimum output voltage for which both M2* and M I 2 operate in the active region is

Therefore, a folded-cascode op amp can provide nearly constant voltage gain while its output swings within two overdrives of each supply. In contrast, the output of a telescopiccascode op amp can swing within two overdrives of one supply and three overdrives of the other while providing nearly constant gain. The small-signal voltage gain of this circuit at low frequencies is

where G, is the transconductance and R, is the output resistance. When all the transistors operate in the active region, the range of typical gain magnitudes is from several hundred

6.6 MOS Folded-Cascode Operational Amplifiers

449

to several thousand. Because of the action of the current mirror M3 - M4, variation in the drain current of M1 and M2 contribute constructively to the transconductance. Therefore,

To find R,, both inputs are connected to ac ground. Although the input voltages do not move in this case, the sources of M1 - M2 do not operate at ac ground. However, connecting this node to small-signal ground as shown in Fig. 6 . 2 9 causes ~ little change in R, because of the action of the current mirror M3 - M4, as explained next. Let zdl and id2 represent the small-signal drain currents of M1 and M2 respectively. Also, let Aid*and Aid;! represent the corresponding changes in idl and id2caused by connecting the sources of M1 - M2 to a small-signal ground as shown in Fig. 6 . 2 9 ~If. r, + m, Aidl = Aid2because this connection introduces equal changes in the gate-source voltages of M1 and M2. Then Aidl flows in the source of MIA,where it is mirrored to the output with a gain of unity if r, -+ in M3 - M4. Therefore, KCL at the output shows that Aidl and Aid2 cancel, causing no change to the output current i, or the output resistance R,. As a result, R, can be found, assuming that the sources of M1 - M2 operate at ac ground. In practice, r, in all the transistors is finite, and R, is altered slightly by connecting this point to ac ground for two reasons. First, Aidl and Aid2 are not exactly equal with finite r, because vd,l and Vds2 are not exactly equal. Differences between vd,, and Vds2 stem from finite r, in MIA and M2Abecause M3 and M 3 are ~ diode connected but their counterparts M4 and M4* are not diode connected. Second, the small-signal current gain of the current mirror is not exactly unity with finite r, because vds3 and Vds4 are not exactly equal. However, the change in the output resistance introduced by these considerations is usually negligible. (These effects are related to the explanation of how a

Figure 6.29 ( a ) Test voltage source applied to the output to calculate the output resistance. (b) Simplified circuit.

450 Chapter 6


current-mirror load increases the common-mode rejection ratio of a differential pair presented in Section 4.3.5.3.) With the sources of M1 - M2 connected to ac ground, the drain current of M1 is constant. Furthermore, the Thgvenin equivalent resistances presented to the gates of M4 and M 4 are ~ small because M3 and M 3 are ~ diode connected. So little error is introduced by assuming that the gates of M4 and M 4 are ~ connected to small-signal ground. Therefore, the calculation of R, can be carried out using the circuit of Fig. 6.29b. By inspection,

The output resistance of transistor current sources with nonzero source resistance was considered in Chapter 4. The result is the same as for a common-source amplifier with source degeneration. The incremental resistance in the source of M 2 is~ the ro of M2 in parallel with the r, of MI2 while the incremental resistance in the source of M 4 is~ the r, of M4. From (3.107),

and

An important advantage of this circuit is that the load capacitance CL performs the compensation function (see Chapter 9). Thus no additional capacitance (such as Cc in previous circuits) need be added to keep the amplifier from oscillating when connected in a feedback loop. Furthermore, in the basic two-stage op amp, Cc feeds the variation from one power supply forward to the op-amp output at high frequencies, as described in Section 6.3.6. This feedforward does not occur in one-stage op amps such as the folded cascode and telescopic cascode structures, improving their high-frequency power-supply rejection ratios from the V,, supply.

6.7 MOS Active-Cascode Operational Amplifiers One way to increase the gain of the folded-cascode op amp without cascading additional stages is to add another layer of cascodes. See Problem 6.21. Although this approach gives a gain on the order of (grnro)3,it reduces the output swing by at least another overdrive in each direction. This reduction becomes increasingly important as the difference between the power-supply voltages is reduced in scaled technologies. To increase the op-amp gain without reducing the output swing, the active-cascode technique described in Chapter 3 can be used." Fig. 6 . 3 0 ~shows the schematic of a folded-cascode op amp with active cascodes. The gates of each of the four cascode transistors MIA,M 2 ~M, 3 ~and , M 4 are ~ no longer connected to a constant bias source but instead to the output of an amplifier. These auxiliary amplifiers are themselves connected in negative feedback loops to increase the resistance looking into the drain of each cascode transistor. As shown by (3.133), the active-cascode configuration increases the output resistance by increasing the effective transconductance of the cascode transistor by (a + l), where a is the voltage gain of the auxiliary amplifier. Let the gains of the auxiliary amplifiers driving M3.4 and MdAbe Al. Applying (3.133) to

6.7 MOS Active-Cascode Operational Amplifiers

45 1

Figure 6.30 (a) Folded-cascode op amp with active-cascode gain-enhancement auxiliary ampli-

fiers.

(6.11 1) to find the output resistance looking into the drain of M 4 gives ~

Let the gains of the auxiliary amplifiers driving MIAand be A2. Applying (3.133) to (6.110) to find the output resistance looking into the drain of MZAgives

To find the overall op-amp gain, (6.112) and (6.113) can be substituted into (6.109) and the result in (6.107). This analysis shows that the gain enhancement in the folded-cascode op amp does not rely on the use of auxiliary amplifiers driving the gates of M I Aand M 3 ~ . However, these auxiliary amplifiers are included in Fig. 6 . 3 0 ~because they reduce the systematic offset of the folded-cascode op amp. Also, using identical auxiliary amplifiers balances the two signal paths until the differential to drive the gates of both MIAand signal is converted into single-ended form by the current mirror. In Fig. 6.30a, the auxiliary amplifiers with gain AI drive the gates of M3* and M4A so that the voltages from the drains of M3 and M4 to ground are approximately equal to VBIAS2.For simplicity, assume that the overdrive voltages for all p- and n-channel transistors operating in the active region are VoVpand V,,,, respectively. Also assume that all n-channel transistors have positive thresholds and all p-channel transistors have negative thresholds. To maximize the positive output swing of the folded-cascode amplifier, the voltage drop from VDDto VBIAS2is chosen to be about (Vo,,(. Therefore, the Al amplifiers

452

Chapter 6


-"ss

(4 Figure 6.30 (b) Auxiliary amplifier with gain Al. ( c )Auxiliary amplifier with gain AZ. (d) Bias circuit.

must operate with a high common-mode input voltage. If these amplifiers use ap-channel differential input pair, the maximum common-mode input voltage would be no more than VDD - IVt,l - 21V0,,I. To overcome this limitation, the AI amplifiers use an n-channel differential pair M21 and MZZ.as shown in Fig. 6.30b. In operation, the dc voltage from VDD to the output of the A1 amplifiers is about lvtpl+ 21~~,,lso that the source-drain voltages of M3 and M4 are )V,,,l. Therefore, the gate-drain voltage of Mz2 is approximately IV,,I + IV,,,I, and MZ2 operates in the active region only if its threshold (with the body effect) is greater than this value. A similar argument can be made to explain the use of p-channel differential pairs in the auxiliary amplifiers with gain A2. The schematic is shown in Fig. 6.30c, and the common-mode inputs are close to Vss in this case. Figure 6.30d shows a circuit that produces the bias voltages needed in Fig. 6.30~-c. The voltage from VDDto VsrAsl is l Vtpl + I V,", 1, and the voltage from VBIAS4to VSS is V,, + V,,,. Transistor MIo5 forces MlO6to operate in the triode region, and the voltage from VDDto VBIASZis at least I V,,,( if

6.8 Bipolar Operational Amplifiers

ignoring body effect as in (4.73). Similarly, the voltage from VBIASSto Vss is at least V,,

453 if

One potential problem with the structure shown in Fig. 6 . 3 0 is ~ instability in the feedback loops around the auxiliary amplifiers. To avoid instability, a compensation capacitor can be placed from each auxiliary-amplifier output to a small-signal ground. Since the AI amplifiers are used to improve the performance of a p-channel current mirror, where signals are referenced to VDD,compensation capacitors for the Al amplifiers Ccl are connected to VDD. Similarly, compensation capacitors for the A2 amplifiers CC2are connected to Vss. The need for such capacitors stems from the observation that the capacitance looking into the gates of MIA,M 2 ~M3A, , and M4Acan be quite small because the gate-source capacitances of these transistors are bootstrapped. This expression means that the source of each of these transistors follows its gate when the corresponding drain current is constant. If the gate-source voltages are exactly constant, zero ac current flows into the gatesource capacitances, and the capacitances looking into the gates of the cascode transistors are independent of their gate-source capacitances. In practice, the gate-source voltages are not exactly constant because of variations in the drain currents caused by variations in the differential input voltage of the folded-cascode op amp, but the bootstrapping effect is significant. As a result, the load capacitances of the auxiliary amplifiers are dominated by parasitics that may vary considerably over variations in processing unless a capacitor is added at the output of each auxiliary amplifier. The issue of stability in feedback amplifiers is considered in detail in Chapter 9.

6.8 Bipolar Operational Amplifiers The basic topology used for most bipolar-transistor op amps is shown in simplified form in Fig. 6.3 1. As in the case of the basic two-stage MOS op amp, it consists of an input stage with a differential pair and a current-mirror load followed by a second stage with a common-emitter amplifier and an active load. Most MOS technologies are complementary

Figure 6.31

amplifier.

Basic two-stage bipolar operational

454

Chapter 6


in the sense that the performance of the p-channel transistors is almost as good as the n-channel transistors in the same technology. However, as mentioned in Section 2.5.2, most bipolar transistor technologies produce pnp transistors that are far inferior to the npn transistors in the same process because the lightly doped n-type epitaxial material is used to form the base of the pnp transistors. As a result, the collector-base depletion region extends mostly into the base, and the base must be made wide enough to accommodate this depletion region. Since (1.21 1) shows that the transition frequency of a bipolar transistor is inversely proportional to the square of its base width, the fT of pnp transistors is usually much lower than for npn transistors in the same process. Although the performance of the pnp transistors can be improved by increasing the complexity of the integrated-circuit processing, such changes increase cost. To minimize cost, a key challenge in bipolar opamp design is often to produce high-performance op amps with fast npn transistors but slow pnp transistors. One example of such circuit design is the 741 op amp, where thepnp devices are used in a way that reduces their impact on the frequency response of the op amp. In this section, we analyze the 741 op amp. It is a widely used stand-alone op amp, and its popularity stems from the fact that it is internally compensated (see Chapter 9) and is a relatively simple circuit that can be made to fit on a die less than 1 mm (40 mils) on a side. It has large voltage gain and good common-mode and differential-mode input voltage ranges. The 741 circuit is shown in Fig. 6.32a.3 The analysis is carried out in three parts. First the operation of the circuit is described qualitatively, and then a dc analysis is carried out to determine the quiescent currents and voltages in the circuit. Finally, a small-signal analysis is carried out to determine the voltage gain, input resistance, and output resistance. Qualitative Description of Circuit Operation. A simplified conceptual circuit diagram is

shown in Fig. 6.32b. The input transistors Ql and Q2 are emitter followers that maintain high input resistance and low input current. They drive the emitters of the common-base differential pair of pnp devices Q3 and Q4. The transistors Q5 and Q6 form an active load for Q3 and Q4. These six transistors taken together actually perform three separate functions that must be carried out in monolithic op-amp realizations. 1. They provide a differential input that is relatively insensitive to common-mode voltages, has high input resistance, and provides some voltage gain. The realization of some voltage gain in the input stage is desirable since the noise and offset voltage associated with the second and later stages are divided by this gain when referred to the input. 2. Level shifting. The pnp transistors produced by standard IC technology have poor frequency response, as described in Section 2.5.2. Thus the most desirable approach to an op-amp realization would be to use only npn transistors. Somewhere in the amplifier, however, the dc level of the signal path must be shifted in the negative direction to maximize the range of possible op-amp output voltages. In general-purpose amplifiers like the 741, this shift is usually accomplished by inserting lateral pnp transistors in the signal path. In the 741, the emitters of the pnp devices Q3 and Q4 operate near the input voltages while the collectors rest at a potential very near the negative supply. 3. Differential to single-ended conversion. The op amps considered in this chapter have differential inputs and single-ended outputs, so within the circuit a conversion must be made to single-ended operation. The simplest approach would be to simply take one of the outputs of an emitter-coupled pair and feed that into a single-ended circuit. However, this approach tends to result in high sensitivity to common-mode input voltages, as described in Chapter 4. To reduce the sensitivity to common-mode inputs, an active-load circuit is used, as realized by transistors Q5 and Q6.

456 Chapter 6


VC,

Output

Figure 6.32 (b) Simplified, conceptual schematic diagram of the 741 amplifier.

Transistor QI6 is an emitter follower that reduces the loading effect of QI7 on the output of the actively loaded first stage. Transistor Q17is a common-emitter amplifier that also has an active load formed by Q13B.This amplifier stage provides large voltage gain. Transistor Q23 is another emitter follower that prevents the output stage from loading the output of the gain stage. Transistors QI4 and Qzo form the Class AB output stage. Transistor QI3is a multicollector lateral pnp The geometry of the device is shown in Fig. 6.33. Note that the collector ring has been split into two parts, one that faces three-

Where Is = saturation current of structure with both collectors connected together

Figure 6.33

Electrical equivalent for multicollector lateral pnp.


457

fourths of the emitter periphery and collects the holes injected from that periphery, and a second that faces one-fourth of the emitter periphery and collects holes injected from that face. Thus the structure is analogous to two pnp transistors whose base-emitter junctions are connected in parallel and one of which has an Is that is one-fourth that of a standard pnp transistor and the other an Is that is three-fourths that of a standard pnp with fuIly enclosed emitter, This equivalence is depicted in Fig. 6.33. 6.8.1 The dc Analysis of the 741 Operational Amplifier

The first step in evaluating the performance of the circuit is to determine the quiescent operating current and voltage of each of the transistors in the circuit. This dc analysis presents a special problem in op-amp circuits because of the very high gain involved. If we were to begin the dc analysis with the assumption that the two input terminals are grounded and then try to predict the output voltage, we would find that a small variation in the beta or output resistance of the devices in the circuit would cause large changes in the output voltage we predict. In fact, the calculation would usually show that the output stage would not operate in the active region but would be saturated in one direction or the other. This problem exists in practice; for a voltage gain of 105,only 0.1 mV of input offset voltage is required to drive the output into saturation with 2 10-V power supplies when the input voltage is zero. Thus the dc analysis must start with an assumption that the circuit is enclosed in a feedback loop that forces the output to some specified voltage, which is usually zero. We can then work backward and determine the operating points within the circuit. A second assumption that simplifies the analysis is to assume that for the dc analysis, the output resistance of the transistors does not greatly affect the dc currents flowing in the circuit. This assumption results in 10 to 20 percent error in the calculated currents. Of course, the output resistance must be included in the small-signal analysis since it strongly affects the gain for the active-load amplifiers. in We first calculate the currents in the biasing current sources Qlo and Fig. 6 . 3 2 ~This . subcircuit is shown in Fig. 6.34. Neglecting base currents and assuming that all transistors are in the forward-active region, we can calculate the reference

-V,, = -1 5 V

Figure 6.34 Bias circuitry for the 741.

458

Chapter 6


current as

= 0.7 V. where we have assumed that VBE(on) The combination of Qll and Qlo forms a Widlar current source, as described in Chapter 4. The output current I I must be found by trial-and-error solution of the relation

The result is II

=

19 p A

The currents I2 and I3 are three-fourths and one-fourth of the reference current, respectively, 12=0.55mA 13=0.18mA The circuit can now be simplified to the form shown in Fig. 6.35. We first determine the bias currents in the input stage. For this analysis, we will neglect the effects of the dc base currents flowing in the npn transistors since these transistors typically have betas of several hundred. Since the betas of the lateral pnp transistors are typically much lower than for the npn transistors, however, we will consider the effects

-v,,=

-15

v

Figure 6.35 Simplified schematic of the 741 with idealized biasing current sources.


459

of the pnp base currents. Since Q8 and Q9 are identical, and since the effect of finite Early voltage is ignored, Icx = Ic9. Therefore, from KCL at the collector of Qx,

If we neglect the base current of Ql and Q2, then KCL at the collectors of Ql and Q2 together with (6.116) gives

From KCL at the collector of Q9,

19 p A = -Ic9

+

IE~ 1 + Ppnp

+

IE~ 1 + Ppnp

=

-1,-91 ")l

+ ( l1 + P p n p

(6.118)

where (6.117 ) has been used. Substitution of (6.118) in (6.116) gives

Substitution of (6.119) into (6.117) with IE3 + IE4= (IC3+ IC4)(1+ l l p p n p )gives

Equation 6.120 shows that the input stage of the 741 op amp is biased so that the sum of IC3 and IC4 is insensitive to pp,, and about equal to Iclo in magnitude. This result can also be predicted by observing that the input stage of the 741 uses a structure similar to a Wilson current mirror. In Fig. 4.14, transistors Ql and Q3 sense and feedback the current in Q2, which is the output current of the Wilson current mirror. In Fig. 6.35, transistors Q8 and Q9 sense and feed back the sum of the currents in Q3 and Q4. As a result, if IC3+ IC4 in the 741 op amp is viewed as the output of a Wilson current mirror whose input is Iclo = 19 FA, (6.120) agrees with (4.100). If the differential op-amp input voltage is zero, the base-emitter voltages of Ql and Q2 are equal and the current IA splits into two equal parts. As a result, Q1 - Q6 each have collector current magnitudes of about 9.5 pA if the pnp beta is reasonably large. On the other hand, if the differential input voltage is nonzero, the base-emitter voltages and collector currents of Ql and Q2 are unequal. However, from KCL at the collector of Q8, Icl IC2 is still given by (6.119). Because the feedback in the input stage of the 741 op amp acts to stabilize the sum of IC3 and IC4, it k an example of a common-mode negative-feedback loop. The 19 FA current source pulls down on the bases of Q3 and Q4, increasing dc currents in Q3, Q4, Q,, IQz, Qx, and Q9 until 1Ic9l = 19 FA and equilibrium is established. This

+

460 Chapter 6


feedback action affects the common-mode (bias) quantities only and is not felt by differential signals in the circuit, since the bases of Q3 and Q4 and the collectors of Ql and Qz are differential-mode ac grounds. Common-mode feedback is studied in Chapter 12. The magnitudes of the collector currents of transistors Q5 and Q6 are equal to those of transistors Q3 and Q4 if base currents are neglected. We must now calculate the dc collector current in transistor Q7. The emitter current of Q7 consists of the base current of Q5 and Q6, which we will neglect, and the current flowing in the 50-kfl resistor. The voltage across this resistor is the sum of the base-emitter drop of Q5 or Q6 and the drop across the l-kCl resistors in series with the emitters of Q5and Q6. The base-emitter drop, A and a collector current of 9.5 pA, is 537 mV. The voltage assuming an Is of drop across the l-kfl resistors is 9.5 mV, so that the current in the 50-kfl resistor is 547 mVl50 klR or l l pA. Thus the collector current of Q7 is equal to 11 pA. We next consider transistor QI6in Fig. 6.35. The voltage from the base of QI7to - VEE is equal to the base-emitter voltage of QI7 plus the drop across the 100-Cl resistor. If the output voltage of the amplifier is to be zero as we have assumed, the collector current of Q17must be equal to the current supplied by current source Q13B,which is 550 pA. Then the voltage at the base of QI7with respect to - VEEis

Assuming a beta of 250, the base current of Q17is

Thus the collector current of QI6 is the sum of the current in the 50-kCl resistor in its emitter and the base current of QI7,or

We now consider the output stage shown in Fig. 6.36, assuming for the time being that base currents are negligible. If this is true, all of the 180-pA from the current source flows through transistor Qz3. We must now determine the dc bias currents in Q14, Q]*, Q19, and Q20.We assume that the circuit is connected with feedback in such a way that the output is driven to zero volts, and the output current is zero. Thus Ic14and Iczoare and IcI9, we will use an iterative approach. First, neglect equal in magnitude. To find ICI8 the base current of transistor Q18.Then the collector current of Q19will be approximately 0.6 V140 klR or 15 pA. Under this assumption, the collector current of QI8 would be approximately (180 - 15) pA or 165 FA. Second, recalculating the collector current of QI9 taking the base current in Q18into account gives

Then IC18 = ( l 8 0 - 16) p A or 164 pA. Further iterations could be used to improve the accuracy; however, since the second iteration produced little change from the first, this result is satisfactory. Now that we know the currents in QI8and Q19, we can estimate the output transistor bias current using (5.83), repeated below for convenience:


46 1

Schematic of output stage of the 741. V o U is ~ zero for the bias current calculation. Figure 6.36

Here we have neglected the voltage drops across the small resistors in series with the emitters of QI4 and Q20. The actual quiescent current that flows in the output transistors depends on their Is values, which depend on their physical geometry. Both of these transistors must carry large currents while maintaining good beta when a small value of load resistance is attached to the output, so they are made with larger geometry than the other transistors in the circuit. The specific geometry used varies with manufacturer but the Is of these devices is typically about three times as large as a small geometry device. Thus Referring to the schematic diagram of Fig. 6.32a, we can see that the circuit contains several devices that are active only during overload conditions. Transistors Qls, Qzl, Q22,Q2,4,and Q23Bare normally off. Transistor Q15 turns on only when the voltage drop across R6 exceeds about 550 mV. When QI5 turns on, it limits the emitter current of Q14 to VBE1S(on)/R6. Further increases in the output current are conducted through Qls, which provides a current gain of about unity from its collector to its emitter. Since the maximum = 180 pA, the current that can be provided to the collector of QI5 is limited by maximum output current flows almost entirely in the emitter of Q14and is approximately 0.55 V / 27 fl 20 mA. Thus QI5 performs short-circuit protection, preventing damage to the amplifier due to excess current flow and power dissipation should the output be shorted, for example, to the negative power supply. Transistors Q21,Q22, and Q24 perform a similar function for the case of the output sinking current, such as when the output is shorted to the positive power supply. As in the previous case, Qzl turns on only when the voltage drop across R7 exceeds about 550 mV. In this case, however, the collector of Q21is not simply connected to the base of Qzobecause Q23,,4does not operate as a current source. Instead Qz3,4operates as an emitter follower that sinks an increasing emitter current as its base voltage is decreased. To limit the maximum current that can flow in Q20to a level that will not destroy this device, the current in QZ3,4must also be limited under these conditions. Therefore, when current flows in Qzl, it is mirrored through Q24 to Q22, where it pulls down on the base of Q16.Because

-

462 Chapter 6


the gain is noninverting from the base to the emitter of QI6but inverting from the base to the collector of QI7,pulling the base of QI6 down increases the base voltage on Q23A.This feedback loop sets the maximum current in Qzo to VEB21(on)/R7 or 25 mA. Finally, an extra emitter on the substratepnp transistor &23 is included to prevent QI6 from burning out if Q17were allowed to saturate. The extra emitter can be thought of as a separate transistor Q23B.Assume that the inverting input terminal is overdriven so as to make it more positive than the noninverting terminal by enough voltage to turn off Ql. Without Q23B,the current into the base of QI6would be 19 pA. This current would be amplified by the beta of Q16,which can be as high as 1000, giving an emitter current of up to 19 rnA. This current would flow into the base of Q17(which would saturate) and finally to - VEE through the 100-fl resistor in the emitter of Q17.As a result, the power dissipation in Q16 would be (19 mA) (30 V), or about 600 mW. The extra emitter on Q23prevents QI7 from saturating by diverting the base drive away from QI6when VCBof QI7 reaches zero volts. Since Q17cannot saturate, its base current remains small under all conditions, limiting the power dissipation in QI6to approximately (16 pA)(30V), or about 0.5 mW.

6.8.2 Small-Signal Analysis of the 741 Operational Amplifier Our next objective is to determine the small-signal properties of the amplifier. We will break the circuit up into its three stages-the input stage, gain stage, and output stage-and determine the input resistance, output resistance, and transconductance of each stage. Consider first the ac schematic of the input stage as shown in Fig. 6.37. Here we have assumed a pure differential-mode input to the circuit; we will consider common-mode inputs later. As a result, the collectors of Ql and Q2 as well as the bases of Q3 and Q4 operate at ac ground. We first calculate the transconductance of the stage by shorting the output to ground and calculating the output current that results when a differential input is

* Figure 6.37 Input stage ac schematic and small-signal, two-port equivalent circuit.


463

applied. With the output of the first stage connected to a small-signal ground, the activeload circuit Q5 - Q7 produces a current iC6 that is approximately equal in magnitude and opposite in sign to the collector current iC3 of Q 3 . Thus iOutis equal to -(ic4 - ic3),andto calculate the transconductance G, we need only consider the circuit shown in Fig. 6.38a. Since the resistance presented to the collector of Q3 is relatively small compared to r, of Q3, we need not consider the output resistances of the devices in this calculation. The smallsignal equivalent half-circuit for Fig. 6 . 3 8 is ~ shown in Fig. 6.38b. For the half-circuit

and KCL at the emitters gives

here

POIis the POof Q1 and POSis the POof Q 3 .

Combining these equations gives

Figure 6.38 (a) ac schematic and (b)

small-signal equivalent half-circuit for calculation of the transconductance of the input stage.

464

Chapter 6


Assuming (Icll = IIc31, then g,l

= gm3.We

also assume that Pal, PO3>> 1. Thus

and

From the symmetry of the circuit,

and, referring to Fig. 6.37,

Thus the overall transconductance of the input stage is

This calculation also yields the differential input resistance of the stage. From Fig. 6.38b, the resistance R,, seen looking into the emitter of Q3 is given by

This resistance appears in the emitter of Q * ,so that using (3.90) we find that

Assuming again that Pal >> 1, P O 3 >> 1 , and g,l

=

g,,?,

Solving for Rid yields

where PO = 250 is assumed. The differential-mode input resistance of the amplifier is thus four times the input resistance of one of the input transistors. In this calculation, we have neglected the fact that when v i d changes, the output voltage of the first stage changes and produces feedback to the input through the output resistance of Q4. This effect produces a difference between the input resistances seen at the two input terminals. We now calculate the output resistance R,, of the input stage. To find RO1,both inputs are connected to ac ground. Although the input voltages do not move in this case,


465

Figure 6.39 (a) Test voltage source v, applied to the output of the input stage for calculation of

the output resistance. (b) Simplified circuit.

the collectors of Ql - Q2 as well as the bases of Q3 - Q4 do not operate at ac ground. causes However, connecting these nodes to small-signal grounds as shown in Fig. 6 . 3 9 ~ little change in Rol because of the action of the current mirror Q5 - Q7, as explained next. Let i,, represent the small-signal collector current of Q,, where n is an integer and 1 5 n 5 7. Also, let Ai,, represent the change in i, caused by connecting the collectors of Ql - Q2 and the bases of Q3 - Q4 to a small-signal ground as shown If. r, + CC in Q, - Q,, Aic3 = Aic4 because these connections introin Fig. 6 . 3 9 ~ ~ duce equal changes in the base-emitter voltages of Q3 and Q4. Ignoring base currents, Aic3 flows in the collector of Q5,where it is mirrored to the stage output with a gain of unity if r, + in Q5 - Q6. Therefore, KCL at the stage output shows that AiC4 and kc6 cancel, causing no change to the output current i, or the output resistance Rol. As a result, Rol can be found assuming that the collectors of Q , - Q2 and the bases of Q3 - Q4 operate at ac ground. In practice, PO and r, in Ql - Q7 are finite, and RO1 is altered slightly by connecting these points to ac ground for two reasons. First, AiC3 and Aic4 are not exactly equal with finite r, because vce3 and vce4 are unequal. Second, the small-signal current gain of the current mirror is not exactly unity with finite r, because vce5 and vc,6 are unequal. Also, finite p. introduces a currentmirror gain error because not all of Aic3 flows in Q5, where it can be mirrored to the output. However, the change in the output resistance introduced by these considerations is usually negligible. (These effects are related to the explanation of how a currentmirror load increases the common-mode rejection ratio of a differential pair presented in Section 4.3.5.3.)

466

Chapter 6


With the collectors of Ql - Q2 and the bases of Q3 - Q4 connected to ac ground, the collector current of Q3 is constant. Furthermore, the ThCvenin equivalent resistance presented to the base of Q6 is small compared to r, of Q6, SO little error is introduced by assuming that the base of Q6 is connected to a small-signal ground. Therefore, the calculation of RO1can be carried out using the circuit of Fig. 6.39b. By inspection,

The incremental resistance in the emitter of Q6 is equal to 1 k a , while the incremental resistance in the emitter of Q4 is the re of Q2. The output resistance of transistor current sources with a resistance in the emitter was considered in Chapter 4. The result is the same as for a common-emitter amplifier with emitter degeneration. Equation 3.98 can be used to give

Assuming Po4>> 1 and

For

Tnpn =

2 X 10p4,Ic

>> gm6(1k a ) , we obtain =

9.5 FA, qpnp= 5 X 1 0 - ~we find RO1= 6.8 MR

(6.14 1 )

Thus the equivalent circuit for the input stage is as shown in Fig. 6.40. We now turn to the second stage, shown in Fig. 6.41a. Again we must calculate the input resistance, transconductance, and output resistance of the stage. We begin by calculating the input resistance. We first calculate the ThCvenin equivalent resistance seen looking into the base of transistor Q17, designated Reql in Fig. 6.41a. Utilizing the results from Chapter 3 for the input resistance of a common-emitter amplifier with a resistance in the emitter,

Here we have neglected the effects of the output resistance of Q17.The positive feedback contributed by r017 actually decreases Reql slightly. The circuit can now be reduced to the form shown in Fig. 6.4 1b. The input resistance of the stage is

0

2.7 MQ

"id

6.8 MQ

O

Figure 6.40 Two-port equivalent circuit for the input stage.


467

Figure 6.41 (a) Small-signal equivalent circuit for second stage. (b) Circuit for calculation of input resistance. (c) Two-port equivalent circuit for second stage.

Combining (6.142) and (6.143) gives

We assume that the transistors have a Do of 250. Transistor QI6 operates at a current of 16 pA whereas Q17 operates at 550 FA. Evaluating (6.144), we find

We next calculate the transconductance of the stage. If we assume that the voltage gain of the emitter follower Q16 is nearly unity, the transconductance Gm2of the stage is just that of transistor Q17 with the 100-Cl resistor in the emitter:

The output resistance of the stage RO2is the output resistance of QIsBin parallel with that seen looking into the collector of QI7. Again utilizing (3.98), we find

468 Chapter 6


(6.148) can be evaluated to give Ro2 = 83 kcR Thus we have developed Ri2,Ro2, and Gm2for the second stage. A two-port equivalent circuit is shown in Fig. 6.41~. We now turn to the output stage. A schematic diagram is shown in Fig. 6.42. The output either sources or sinks current, depending on the output voltage and load. As a result, the input resistance and output resistance of the output stage is heavily dependent on the particular value of output voltage and current. As will become evident, the input resistance of the output stage is much larger than the output resistance of the preceding stage, and as a result the actual value of the input resistance of the output stage does not strongly influence the voltage gain of the circuit. Thus we simply assume, for example, the output current is 2 mA and that this current is flowing out of the output terminal. We further assume that the load resistance is 2 k 0 . Since the output current is flowing out of the output stage, transistor QI4operates in the active region and transistor QZ0conducts "cc

Figure 6.42 (a) Simplified output-stage circuit of the 741. (b) Small-signal circuit when sourcing current. ( c ) Circuit for calculation of R,,,.


469

only a small amount of current. The small-signal equivalent circuit for this case is shown in Fig. 6.42b. The voltage gain is approximately unity since the circuit consists of two emitter followers in series. We now calculate the input resistance Ri3 of the output stage. We first calculate the resistance seen looking into the base of transistor QI4, which is designated Req2in Fig. 6.42b. Using the results from Chapter 3 on emitter followers, we find

We next calculate the Thkvenin equivalent resistance seen at the emitter of QZ3,looking toward diodes QI8 and QI9. This resistance is designated Req3in Fig. 6.42b, and is seen by inspection to be

Finally, the input resistance of the stage is that of emitter follower Q23 with a resistance Req3in its emitter, or

Transistor Q23 and the two diodes operate a current of 180 pA, while QI4 operates at 2 mA. Assuming an npn POof 250 and a pnp POof 50, (6.154)can be evaluated to yield

and thus Ri3 = 9.1 MQ

This input resistance is much larger than the output resistance of the preceding stage, and as a result the gain of the amplifier is not strongly affected by variations in load resistance attached to the output of the amplifier. We now caIculate the output resistance of the output stage. We must include the output resistance of the preceding stage in this calculation; the small-signal equivalent circuit for performing the calculation is shown in Fig. 6 . 4 2 ~ . The resistance seen looking to the left from the base of QI4is

The resistance seen looking into the output terminal is then

To this resistance we must add the series current-limiting resistance R6, which is 27 Cl. The actual value of R,,, is thus 48 R. The output resistance will change with operating point and is heavily dependent on the current flowing in the output transistor. Small-Signal Performance of the Complete Circuit. The small-signal equivalent circuit for the complete amplifier is shown in Fig. 6.43. The voltage gain is

470 Chapter 6 W Operational Amplifiers with Single-EndedOutputs R,, = 48 Q

Figure 6.43 Small-signal equivalent circuit for the complete 741.

Note that both stages contribute about the same gain. The second stage loads the first, reducing its gain by about half. This loading gives the gain of the circuit a beta dependence that will cause the gain to vary with temperature and process variations. However, the output stage does not significantly load the output of the second stage and the voltage gain is almost independent of the load resistance attached to the output. The input and output resistances of the complete amplifier are

Inclusion of Second-Order Effects in the Analysis; Computer Analysis. The objective of the first-order approximate analysis procedure just carried out for the 741 was to develop an insight into the factors that are most important in affecting circuit performance. However, the simplifying assumptions made in the analysis limit the accuracy of the results related to dc operating points and voltage gain. The principal violations of the assumptions made are as follows:

The output resistance of the transistors was neglected in the dc analysis. Actually, the collector current of a typical lateral pnp transistor increases about 30 percent when VCE increases from zero to 15 V, assuming that the base-emitter voltage is held constant and that V A is about 50 V. For the npn devices, the figure is 12 percent, assuming a V A of 130 V. As a result, the bias currents in the circuit increase by from 10 to 30 percent over those calculated, reducing the calculated small-signal resistance levels. The variation of transistor beta with current has been neglected. As described in Chapter 1, the transistor current gain falls at low collector current levels due to recombination in the emitter-base depletion region. As a result, the input stage devices Q, to Q7 and device have substantially lower small-signal current gain than was assumed in the analysis. The principal effect of this fall-off is to reduce the voltage gain of the amplifier and increase the input bias current. When a detailed quantitative prediction is required regarding the performance of such circuits, a SPICE computer analysis is generally less time consuming than attempting a hand analysis, taking into account the second-order effects. Such an analysis applied to the 741 yields the bias levels shown in Fig. 6.44. 6.8.3 lnput Offset Voltage, lnput Offset Current, and Common-Mode Rejection Ratio of the 741

Two important aspects of the performance of op amps are the input offset voltage and current. These deviations from ideality limit the ability of the circuit to amplify small dc


Transistor

Ic (pA)

Transistor

471

Zc (pA) 482.9 172.7 Off 16.87 687.3 204.0 16.38 -173.4 Off Off -219.7 Off Off

Figure 6.44 Computer-predicted dc bias levels of the 74 1 operational amplifier obtained from SPICE.

signals accurately, since the offsets are indistinguishable from the signal. The calculation of these quantities is somewhat tedious.12 In this section, we describe the factors influencing the offset voltage and current of the 741 circuit qualitatively. The input offset voltage of differential amplifiers can be shown to be primarily dependent on the offset voltage of the first stage, provided that the voltage gain of the first stage is reasonably high.' The input stage of the 741 is somewhat complex, consisting of three pairs of transistors, Q1 - Q2, Q3 - Q4, and Q5 - Q6.The stage provides level shifting and differential-to-single-ended conversion as well as differential amplification. As a result, mismatches in each of the three device pairs, as well as mismatches in the resistor pair RI - R2, contribute to the input offset voltage of the circuit. A typical offset voltage of about 2.6 mV would be expected for the 741 assuming typical transistor mismatch and resistor mismatch data.12 The input offset current of the circuit results primarily from mismatches in the beta of the two input transistors Ql and Q2. A typical input offset current of about 4 nA would be expected for the circuit.12 This value is highly dependent on the actual matching of transistor beta achieved in the circuit for the low current level at which the input stage operates. As described in Section 6.2.5, the common-mode rejection ratio can be regarded as the change in input offset voltage that results from a unit change in common-mode input voltage. This change in input offset voltage stems from two separate effects. First, when the common-mode input voltage changes, current-source transistors Q9 and QIo experience a change in collector-emitter voltage. Because of the finite output resistance of these devices, their collector current changes, which results in a change in the bias current in the input stage. If resistors R1 and R2 were not present, this change in the bias current would not change the input offset voltage, but the presence of these resistors results in a change in the ratio of the collector currents of Q5 and Q6 if a mismatch exists between Q5 and Q6, or if a mismatch exists between R I and R2. This change in the ratio of the collector currents of Q5 and Q6 results in a . change in the ratio of the currents flowing in Q , - Q2 and in Q3 - Q4, and a change in the input offset voltage. The second source of input offset voltage change is caused by changes in the collectoremitter voltages of Ql, Q2, Q3, and Q4 when the input common-mode voltage is changed. As a result, if a base-width mismatch exists in these devices, the ratio of the

472 Chapter 6


saturation currents of Ql and Q2 and the ratio of the saturation currents of Q3 and Q4 will vary also. These ratio variations result in changes in the input offset voltage. Comparison of Calculated Performance Parameters and Experimentally Observed Values. The calculated and observed values of typical performance parameters of the 741

are shown in the following table.

Calculated Open-loop gain Input resistance Input bias current Input offset current Input offset voltage Output resistance

324,000 2.7 MLR

38 nA 3.8 nA12 2.6 mVl2 48 n

Observed (typical) 200,000 2.0 MLn 80 nA 10 nA 2 mV 75 LR

The differences between the calculated and observed parameters result from differences between typical device parameters obtained in production and those assumed in the analysis, and from the approximations made in the hand analysis. We now turn from the analysis problem to that of improving the performance parameters of the 741 by circuit modifications.

6.9 Design Considerationsfor Bipolar Monolithic Operational Amplifiers Operational-amplifier design involves trade-offs between the various dc, small-signal, and transient performance parameters as well as the die size and resultant cost. In the 741, the principal design objective was to obtain an internally compensated circuit with moderate dc and ac performance while maintaining a small inexpensive die. However, by the use of more complex circuitry, the dc, small-signal, and transient performance of the circuit can be greatly improved. Frequently, steps taken to improve the transient behavior degrade dc parameters such as input offset voltage and input bias current. In this section we explore design approaches to the improvement of the input parameters: input offset voltage, input bias current, and input offset current of the 741. Since the frequency response and compensation of op amps are described extensively in Chapter 9, we defer the description of optimization of transient behavior and slew rate until then. Applications of Precision Operational Amplifiers. The input characteristics of op amps,

including the input offset voltage and drift, input bias current and drift, and input offset current and drift, determine the lower limit of the magnitude of dc signals that can be accurately amplified. These performance parameters are most important in instrumentation applications where very small dc potential differences must often be measured. A typical example is the thermocouple amplifier shown in Fig. 6.45. A thermocouple is a junction of two dissimilar metals that produces a potential difference that varies with temperature. When used as temperature sensors, two junctions are used in series with one held at a reference temperature. The potential difference produced by the series combination of the junctions is then proportional to the temperature difference between them. These devices have a usable sensing temperature range that extends to several thousand degrees, and

6.9 Design Considerations for Bipolar Monolithic Operational Amplifiers

473

0

A

reference junction

Figure 6.45 Differential temperature-

sensing amplifier using thermocouples.

+ Figure 6.46 Equivalent circuit of the thermocouple amplifier including Ios and Vos.

they are useful in furnace controllers and other such systems. For iron-constantan thermocouples, the output voltage is about 50 pVI0C. The offset voltage and current of the op amp used will limit the resolution of this temperature-measuring system. The equivalent circuit with these imperfections included is shown in Fig. 6.46. By use of the summing-point constraints the output can be calculated to be

where AV; = (V1 - V 2 )and we have assumed for simplicity that R2 >> R I . The output contains an error term that depends on the input characteristics of the amplifier. In this case, the input offset current and voltage, and not input bias current, are the critical quantities. For example, if we use a 741 in this circuit with an iron-constantan thermocouple, the input offset voltage of 2.6 mV alone will give an error in the measured temperature of

In such a critical application, an external potentiometer would be used to null the offset voltage of the 741 to zero to eliminate this large error. This nulling is accomplished by connecting an external potentiometer between R1 and R2 in the 741 circuit. However, the limiting factor would then become the drift of the input offset voltage with temperature.

474 Chapter 6


This drift can be calculated by differentiating the equation for the offset with respect to temperature.12 The result shows that nulling the offset reduces but does not eliminate the drift. In particular, the resistor mismatch term AR1-2/R1-2will generally have nonzero temperature dependence because of the presence of the nulling potentiometer with a different temperature coefficient than that of the diffused resistors. The actually observed behavior is that nulling the 741 improves the drift somewhat over the unnulled state, and the residual offset voltage temperature coefficient has a typical value of about 3 to 5 kV/OC. This level of drift in the thermocouple temperature-sensor application would result in an error of 0. 1•‹Cin the sensed temperature for every degree change in the ambient temperature experienced by the op amp. This sensitivity of sensed temperature to ambient temperature would be unacceptable in many precision process control systems. Therefore, a need exists for op amps with substantially better input offset voltage and input offset current drift than the 74 1. While in this particular example the offset voltage was most important, many applications involve high source impedances so that the input bias and offset current are also important. 6.9.1 Design of Low-DrifiOperational Amplifiers

The offset voltage of multistage differential amplifiers depends primarily on the offset of the first stage, provided that the stage has sufficiently high voltage gain. Thus the design of low-offset amplifiers is primarily a problem of designing an input stage in which as few component pairs as possible contribute to the stage offset voltage. In the 741, the input stage is relatively complicated since it provides gain, level shifting, and differential-tosingle-ended conversion. A more optimum circuit from the standpoint of drift and offset is one that contains fewer devices to contribute to the offset voltage.13 The simplest differential stage is the resistively loaded emitter-coupled pair shown in Fig. 6.47. From (3.216), the offset of this stage is

The drift of this offset with temperature is given by

Figure 6.47 Resistively loaded emittercoupled pair.


475

Assume that the standard deviation of resistor matching is 1 percent and that of Is matching is 5 percent. Using (3.220), the standard deviation of the offset of the resistively loaded emitter-coupled pair alone is about 1.3 mV and the unnulled drift at room temperature is 4.4 p,VI0C. These results are about half of the corresponding values for the 741 op amp. Therefore, this circuit is advantageous for use as the input stage of low-drift op amps. One approach to the incorporation of this stage in the op amp is to simply use an emitter-coupled pair followed by a 741 or equivalent. An example of such an approach is the 725 op amp.l2>l3The gain of the input stage is chosen to be large enough that the second-stage does not contribute significantly to the offset and drift, yet the collector resistors must be kept small enough that the frequency response of the overall circuit is not excessively degraded by the response of the first stage. If the collector resistors RC in Fig. 6.47 could be adjusted to null the offset in the emitter-coupled pair input stage, then nulling of the offset would in principle simultaneously null the offset drift. However, the external potentiometer used to adjust the collector resistor ratio generally displays different temperature dependence than the diffused resistors so that a new drift component is introduced because the RC mismatch factor becomes temperature dependent. In practice, temperature drifts of offset on the order of 1 to 2 FVIOC are achievable with external potentiometer nulling. Offset Trimming Techniques. An alternate approach to the realization of very low drift is

the nulling of the offset voltage using on-chip resistances that are inserted or removed from the circuit under the control of an on-chip programmable read-only memory.14 A schematic diagram of such a circuit is shown in Fig. 6.48. The collector resistors consist of a large

Figure 6.48 Input-stage circuit for on-chip discrete trimming using fusible or shortable links. Resistance R' is much smaller than RC.

476 Chapter 6


portion ( R c ) in series with a smaller portion that is divided up into binary-weighted segments (R', 2R', and 4R'). The single-pole switches shown connected across the resistors are fusible links of aluminum that can be opened by a current pulse. The offset can be nulled when the devices are tested in wafer form, and the nulling does not introduce additional drift components because the collector resistances are all monolithic components of the same type. Since the resistors are binary weighted, the number of discrete steps into which the adjustment range is divided is proportional to 2" where n is the number of fusible links in one collector. This technique is a powerful and low-cost method for improving the input characteristics of precision monolithic op amps. With this technique, input offset voltages of less than 50 J.LVcan be realized. Layout Considerations. A basic objective in the design of precision circuits is the min-

imization of the input offset voltage, which requires the minimization of the mismatch between the collector resistors and the input devices. One factor that limits the attainable matching is the photolithographic resolution. Therefore, an important parameter is the size of the resistor or transistor being defined in relation to the resolution. If the width of a resistor or the emitter area of a bipolar transistor is increased, then the effect of a constant amount of edge-location uncertainty decreases proportionately, improving matching. The second factor limiting the matching is process-related gradients across the die. The effects of this factor can be partially alleviated by use of appropriate geometries that cause the device mismatch to be insensitive to certain types of process gradients. Such geometries are termed common centroid, and Fig. 6.49 shows a common-centroid layout for a bipolar differential pair. Here the transistors making up the pair are formed from cross-connected segments of a quad of transistors. In a geometric sense, the centroid of both composite devices lies at center of the structure. An example of the use of such a geometry is in the first stage of the 725 op amp,12*13where the input devices in Fig. 6.47 are split into a quad and cross-connected to provide the common-centroid geometry. The 725 op amp achieves a typical input offset voltage of 500 p V , which is about a factor of four lower than for the 741 op amp. 6.9.2 Design of Low-Input-Current Operational Amplifiers

In instrumentation applications in which the signal source has a low internal impedance, the input offset voltage and its associated drift usually place a lower limit on the dc voltage than can be resolved. When the source impedance is high, however, the input bias current and input offset current of the op amp flowing in the source resistance or the gain-setting resistors can be important in limiting the ability of the circuit to resolve small dc signals. Furthermore, many applications involve the direct sensing of currents; a good example is the photodiode amplifier shown in Fig. 6.50. Such photodetectors are used in a variety of applications where the level of ambient light must be sensed. Typical photodiode output currents vary from the picoampere level to the microampere level over the light flux range of interest, so that the input current of the op amp in Fig. 6.50 will limit the lower level of light flux that can be resolved. A need thus exists in this application as well as others for op amps with input currents much lower than that of the 741. In the 741, the input bias current is the average base current of the input devices. To reduce this value, we might consider several alternatives, including reduction of the bias current in the input stage, insertion of a current source to cancel the input current, an increase in the beta of the input devices, or the use of MOS input transistors. Unfortunately, reducing the bias current of the stage degrades the frequency response of the circuit, as will be described in Chapter 7. Furthermore, the current gain of integrated-circuit


477

OB2

Bl"

Figure 6.49 Common-centroid geomE

etry for the emitter-coupled pair.

npn transistors tends to fall rapidly at current levels below 1 pA unless special steps are added to the fabrication process. The techniques that have gained wide acceptance are the use of a canceling current source (bias-current cancellation), an increase in the beta of the input devices (superbeta transistors), and the use of MOSFETs as the input transistors. We will describe each of these approaches. Bias-Current Cancellation. Since the input bias current of the 741 op amp is equal to

the average collector current of the input transistors divided by the average beta of the input transistors, a second current equal to the input current is derivable from the collector

4 Photodiode

Figure 6.50 Integrating photodiode

amplifier.

478

Chapter 6


Figure 6.5 1 Conceptual schematic of inputcurrent cancellation scheme. The IslAscurrent sources are equal in value to the base current of the input devices.

current of the input transistors by performing a division by beta. This current then can be fed back into the input terminal via a current mirror, completely canceling the input bias current in principle. A conceptual schematic of such an input stage is shown in Fig. 6.51. This technique indeed does result in a large reduction in the input bias current, the amount of the reduction being limited by the matching of the betas of the npn transistors in the circuit. Unfortunately, however, it does not improve the input offset current. A practical input-current-cancellation circuit is shown in Fig. 6.52. In this circuit, transistor Qg, together with diodes Qlo and Qll, serve to bias the emitters of Q6 and Q8 at a potential three diode drops more positive than the emitters of Q 1and Q2. Diodes Q7 and

-VEE

Figure 6.52 Typical bias-current-cancellation circuit.


479

Q5 are forward biased since they carry the base currents of Q3 and Q4, and so the bases of Q3 and Q4 are two diode drops above the emitters of Q1 and Q2. The emitters of Q3 and Q4 are then one diode drop above the emitters of Q* and Q2, and these input transistors operate at approximately zero collector-base bias. Assuming the beta of the npn devices is large, the collector current of Q3 and Q4 is approximately equal to that of input transistors Ql and Q2. If the npn betas are all the same, then the base currents of Q3 and Q4 are the same as the base currents of Ql and Q2. Thepnp current mirrors, Q5, Q6, Q7 and Qs, then take this base current and supply a nearly identical current back into the base of Ql and Q2. With perfect matching, the extent of the cancellation depends on the magnitudes of the pnp and npn betas. In practice, the npn betas are high but the pnp betas are rather low in this circuit because the pnp devices themselves operate at very low current level. Also, the betas of the npn transistors do not match precisely. As a result, a mismatch of from 5 to 20 percent typically exists between the base current of Ql and the collector current of Q6. The resulting residual input current is typically .one-fifth to one-twentieth of the original uncompensated input current. The input offset current, on the other hand, is made worse by the presence of the cancellation circuitry. The input offset current is the sum of the original mismatch in the base currents Ql and Q2, plus the mismatch in the collector currents of Q6 and Q8. The latter depends on the beta matching of the pairs Q3 - Q4, Q5 - Q6, and Q7- Q8, and on the Is matching of Q5- Q6, and Q7- Q8. The offset current will be worsened by a factor of two to four compared with the uncompensated case. The input noise current is also increased, as described in Chapter 11. An example of a typical bias current compensated amplifier is the OP-07,14 which also incorporates offset trimming as described in Section 6.9.1 and shown in Fig. 6.48. The resulting circuit has a typical input offset voltage of 50 pV, a typical input bias current of 4 nA, and a typical offset current of 4 nA. Superbeta Transistors. A second approach to decreasing the input bias current is to in-

crease the current gain of the input-stage transistors.15 A practical method of achieving this result is the use of superbeta transistors as described in Section 2.7.2. From a circuit standpoint, application of these devices requires the design of an input stage in which the input devices are never subjected to a collector-emitter voltage of more than 1 or 2 V. This restriction can be satisfied using a cascode configuration as shown in Fig. 6.53. The diodes D1 and D2, together with current source Zl, bias the bases of Q3 and Q4 at a potential two diode drops above the emitters of Ql and Q2.This results in zero collector-base voltage in Ql and Q2. The 108 is a typical super-beta op amp15 and has an input bias current of 3 nA and an offset current of 0.5 nA. Operational Amplifiers with MOS Input Transistors. A third practical alternative for

achieving low input bias current is the use of MOS transistors as the input devices. As described in Section 6.2, MOS transistors have intrinsic gate currents on the order of femtoamps, giving ultra-low input bias currents in internal applications, where protection diodes are not required. One way to use MOS transistors at the op-amp inputs is simply to replace the bipolar differential pair with an MOS differential pair. Since MOS transistors give a low transconductance-to-current ratio, however, this direct substitution reduces the transconductance for a fixed tail bias current as shown by (1.181) and (1.182). As a result, sourcecoupled pairs of MOS transistors inherently display higher input-referred random offset voltage than bipolar pairs for the same level of geometric mismatch or process gradient

480 Chapter 6 m Operational Amplifiers with Single-EndedOutputs

"out

.pdevices

Q

I2 (greater than I , )

I V-

Figure 6.53 Super-P input stage using cascode configuration.

as described in Section 3.5.6.7. To avoid the reduction in the transconductance, an alternative is to drive a bipolar differential pair with MOS source followers. In this case, the transconductance is determined by the bipolar transistors and the input-referred bias and offset currents are zero, but the MOS transistors contribute significantly to the inputreferred random offset voltage. See Problem 6.31. Therefore, the use of MOS devices at the inputs of an op amp overcomes the problems associated with nonzero input currents at the expense of worsening the offset voltage.

PROBLEMS 6.1 For the circuit of Fig. 6.54, determine the output current as a function of the input voltage. Assume that the transistor operates in the active region.

when the input voltage is zero. Assume a nonzero input bias current, but zero input offset current and input offset voltage.

+ Figure 6.54 Circuit for Problem 6.1


6.2 Determine the output voltage as a function of the input voltage for the circuit of Fig. 6.55. Assume the op amp is ideal. 6.3 In the circuit of Fig. 6.56, determine the correct value of R, so that the output voltage is zero

6.4 The differential instrumentation amplifier shown in Fig. 6.57 must have a voltage gain of 103 with an accuracy of 0.1 percent. What is the minimum required open-loop gain of the op amp? Assume the op amp open-loop gain has a tolerance

-*


"out

*

Problems

481

MOS switches with zero on-resistance and infinite off-resistance. 6.9(a) Calculate and sketch the output voltage waveform of the switched-capacitor integrator of Fig. 6 . 1 0 ~from t = 0 to t = 20 p s assuming a fixed V , = 1 V and a clock rate of 1 MHz. Assume an ideal MOS op amp with infinite gain and zero output rise time. Assume ideal MOS switches with zero on-resistance and infinite off-resistance. (b) Compare the result for (a) with the output waveform of the continuous-time equivalent circuit of Fig. 6 . 1 0 ~ . (C) Investigate the effect on the output voltage waveform in (a) of a finite voltage gain of 1000 in the MOS op amp. 6.10 Calculate the low-frequency PSRR from the Vdd and V,, power supplies for the commonsource amplifier shown in Fig. 6.58. Assume the transistor is biased in the active region.

-


of +l00 percent, -50 percent. Neglect the effects of Rio and Routin the op amp. 6.5 Once the offset voltage of the differential amplifier in Problem 6.4 is adjusted to zero, the input-referred offset voltage must remain less than 1 mV in magnitude for common-mode input voltages between t 10 V. What is the minimum CMRR allowable for the amplifier to meet this requirement?

6.6 Consider the differential amplifier shown in Fig. 6.4. Choose values of R I and R? for which the gain is equal to - 10 and the magnitude of the dc output voltage is less than or equal to - 10 mV with V, = V2 = 0. Assume that the op amp is ideal except that llosl = 100 nA. 6.7 Suppose an op amp with PSRRt = 10 is connected in the voltage-follower configuration shown in Fig. 6 . 3 ~ The . input V, is set to zero, but a low-frequency ac signal with peak magnitude vSup = 20 mV is is superimposed on the positive power supply. Calculate the peak magnitude of the output voltage. 6.8 In the switched-capacitor amplifier of Fig. 6.9a, assume that the source of M4 is connected to V, instead of to ground. Calculate the output voltage that appears during $2 for a given V,. Assume the op amp is ideal except that it has a finite gain a and a nonzero input capacitance Cp. Assume ideal


6.1 1 Draw a two-stage op amp similar to the op amp in Fig. 6.16 except reverse the polarity of every transistor. For example, the resulting op amp should have an n-channel input pair. Calculate the following parameters: (a) low-frequency voltage gain, (b) output swing, (c) systematic input offset voltage assuming (6.66) is satisfied, (d) common-mode rejection ratio, (e) common-mode input range, and (f) low-frequency power-supply rejection ratio from both supplies. 6.12(a) Equation 6.69 gives the random input offset voltage of the op amp in Fig. 6.16. Explain the polarity of each term in (6.69) by assuming that the matching is perfect except for the term under consideration. Keep in mind that the overdrive is negative forp-channel transistors. Therefore, (6.69) predicts that the offset stemming from W3 > W4 is negative.

482

Chapter 6


(b) Repeat (a) for an op amp that uses an nchannel differential pair and a p-channel currentmirror load. Equation 6.69 still applies in this case. 6.13 (a) Calculate the random input offset voltage for the op amp in Fig. 6.16. Assume the matching is perfect except that V13- Vrq = 10mV. Also assume that all transistors have equal WIL and operate in the active region. Ignore short-channel effects and use the data in Table 2.4. (b) Repeat (a) for an op amp that uses an nchannel differential pair and a p-channel currentmirror load. (C) Which of these two configurations gives lower input offset voltage? Explain. 6.14 List and explain at least three reasons to select a two-stage op amp with an n-channel input pair instead of with a p-channel input pair for a given application. 6.15 Calculate bias currents and the lowfrequency small-signal voltage gain for the CMOS op amp of Fig. 6.59. Use the parameters given in Table 2.4, and assume that Xd = 0.1 Km and dXdldVDs = 0.04 pm/V for all the transistors at the operating point. Calculate the input cornrnonmode range assuming that the wells of M , and M2

are connected to their common-source point. Calculate the low-frequency gain from each supply to the output. Check these calculations with SPICE simulation~. 6.16 Calculate the common-mode input range of the op amp in Fig. 6.25. Assume that all the transistors are enhancement-mode devices with IV,/ = 1 V, and ignore the body effect. Also assume that the biasing is arranged so that IV,,I = 0.2 V for each transistor except Mq. Finally, assume that M , and M2 are biased at the edge of the active region by Mg and Zc. 6.17 Draw a telescopic-cascode op amp similar to the first stage in Fig. 6.25 except use an n-channel input pair and a high-swing p-type cascode currentmirror load. Calculate the maximum output swing in terms of the common-mode input voltage. Determine the optimum common-mode input voltage for maximizing the output swing, and calculate the swing with this common-mode input voltage under the same assumptions given in Problem 6.16. 6.18 Calculate the common-mode input range of the folded-cascode op amp in Fig. 6.28. Assume that all the transistors are enhancement-mode devices with IV,1 = l V, and ignore the body effect.

Figure 6.59 Circuit for Problem

6.15.

Problems

Also assume that the biasing is arranged so that /V,,I = 0.2 V for each transistor. Finally, assume that MI1and MI2are biased at the edge of the active region. 6.19 Find the low-frequency voltage gain from variation on each power supply to the op-amp output in Fig. 6.28. Assume that the bias voltages VB~ASI, VBIAS~, and VB1AS3are produced by the circuit shown in Fig. 6.60, where M106 is the only transistor that operates in the triode region. Assume that the WIL ratios are chosen so that all transistors in the op amp operate in the active region. Compare your calculations to SPICE simulations. Use models and supply voltages of your choice provided that the above conditions are satisfied. 6.20 Design a CMOS op amp based on the folded-cascode architecture of Fig. 6.28 using supply voltages of 21.5 V. Use the bias circuit of Fig. 4.42 (with M g and M4 cascoded) to generate the bias current ZsrAs.Then design an extension to this bias circuit that produces the bias voltages VBTASI, V B I A Sand ~ , VBIAS~ based on ]BIAS.The output current-drive capability is to be + 100 pA, the output voItage-swing capability 1.5 Volts peakpeak, and the input common-mode range should extend from 0.5 V to the negative supply. Matching requirements dictate a minimum effective channel length of 1 pm. To make the gain insensitive to small shifts in the operating point, design the

483

circuit so that the magnitude of the drain-source voltage for each transistor operating in the active region exceeds the magnitude of its overdrive by at least 100 mV. Specify all device geometries and bias currents. The process is the n-well process with parameters given in Table 2.4. Assume Xd = 0 and y = 0 . 2 5 ~ "for~ both n- andp-channel transistors, but ignore the body effect in the hand calculations. Use SPICE to verify and refine your design as well as to determine the gain. 6.2 1 Draw the schematic of a folded-cascodeop amp similar to the op amp in Fig. 6.28 except with two layers of both n- andp-type cascodes. Choose a current mirror that maximizes the output swing. Assume that all transistors have equal overdrive magnitude~except where changes are needed to maximize the output swing. Use the models in Table 2.4 and ignore the body effect. Specify the WIL ratios in multiples of (WIL),. 6.22 For the folded-active-cascode op amp in Fig. 6.30, choose the device sizes to give a peakpeak output swing of at least 2.5 V. Use the 0.4 pm CMOS model parameters in Table 2.4 except Iet y = 0.25 and Xd = 0 for all transistors and Vlo = 0.7 V and -0.7 V for nchannel and p-channel transistors, respectively. Assume the drawn channel length is L = 1 p m is used for all transistors to simplify the design. With Z B ~ ~=s 25 p,A, the bias currents shouId be

+ss

Figure 6.60 Bias circuit for Problem 6.19.

484 Chapter 6


lI~sl= IDII= 1012 = 1025 = 1 1 ~ 3 5 1 = 200 p A . Assume VDD = Vss = 1.65 V and that the matching is perfect. When the dc input voltage V! = 0, assume that all transistors except MIo6 and M114 operate in the active region with equal overdrive magnitudes. To make the gain insensitive to small shifts in the operating point, design the circuit so that the magnitude of the drain-source voltage for each transistor operating in the active region exceeds the magnitude of its overdrive by at least 100 mV. Ignore the body effect in the hand calculations. Use SPICE to verify your design, to choose the widths of MIo6and M114, and to determine the gain. Also, use SPICE to determine the gain if Vlo = 0.6 V for n-channel transistors and Va = -0.8 V for p-channel transistors, as given in Table 2.4. Explain the resulting change in the op-amp gain. 6.23 Suppose that the peak-peak output swing requirement in Problem 6.22 is reduced while the other conditions are held constant. This change allows the overdrive magnitude to be increased. Which transistor in the bias circuit of Fig. 6.30d enters the triode region first if the overdrive magnitude~are increased uniformly? Explain. Exclude and M I l 4from consideration because they are deliberately operated in the triode region. How can the bias circuit be redesigned to increase the allowed overdrive magnitude while operating all transistors except MLO6 and in the active region? What are the disadvantages of the modified bias circuit?

6.24(a) Figure 6 . 6 1 ~shows a folded version of the op amp in Fig. 6.15. A differential interstage level-shifting network composed of voltage sources V has been inserted between the first and second stages. Assume that current source I I is implemented using an n-channel transistor with overdrive of V,,,, which is equal to the overdrives of the other n-channel transistors shown in Fig. 6 . 6 1 ~ . Assume that current sources 12 and 1 3 are each implemented using one p-channel transistor with an overdrive of V,,,. In the resulting op amp, only nchannel transistors conduct time-varying currents. Find the input common-mode range and the maximum output swing of the op-amp in terms of VDD, - Vss, the level-shift voltage V, the threshold voltages of individual transistors, and the overdrives Vovn and V,,,. (b) Figure 6.61b shows a realization of an active floating level shift (active battery). Design this level-shift circuit to give a battery voltage of 1.5 V with a small-signal resistance less than 1 kfi at I = 100 p A dc. Ignore the body effect. Use IB= 100 p A and VDD = Vs, = 1.65 V. Use SPICE to plot the large-signal I - V characteristic for V = 0 to 1.65 V. Use pnCox= 194 p,A/V2, A = 0, and V , = 0.6 V. For SPICE simulations, connect the lower end of the battery to the negative supply. 6.25 In the input stage of the 741, calculate the collector current change in Q, and Q2 when the power-supply voltage is reduced from -C15 V to + l 0 V. Neglect the effects of finite output resistance in the transistors. Check with a SPICE

Figure 6.61 Circuits for Problem 6.24.

Problems

485

-VEE (b)

-VEE

(4 Figure 6.62 Circuits for Problem 6.26.

simulation and then add finite output resistance in the transistors and compare the results. 6.26 Shown in Fig. 6.62 are two alternate schemes for biasing the 741 input stage. In each case determine the required values of IREFto give an input transistor collector current of 10 pA. Neglect npn base currents. Assume that the pnp beta is 50 and V A -, for all devices. Assume that devices of the same type are identical. Check your results with SPICE and also use SPICE to compare the smallsignal transconductance of the stages for a differential input voltage drive. (Use a dc bias voltage of 1.6 V relative to - VEE on the output.) Discuss any differences. 6.27 Shown in Fig. 6.63 is an alternate outputstage biasing scheme using a VBEmultiplier. Determine the bias current as a function of the resistor ratio RdRI.Determine the resistor ratio required to give abias current of 50 pA. Does IBIASremain constant overtemperature?Assume that the output transistors Q3and Q4have a saturation current that is five times that of the small-geometry devices. Neglect the portion of the 200 p A flowing through R2 and R I , and neglect base currents. Assume Is = low5 A. Use SPICE to calculate bias currents in the circuit using your calculated resistor ratio and RI = 100k 0 . Plot thevariation in IBIAS from -5S•‹C to +125OC. 6.28 Determine the gain of the 741 if the bias current level in the input stage is doubled. 6.29 How is the gain of the 741 affected if the 100-fl resistor in the emitter of QI7 is removed? Find the new value of voltage gain.

-VEE


6.30 Determine the common-mode input voltage range of the 741. By connecting the 741 in a unity-gain feedback configuration such as in Fig. 6.3c, use SPICE to investigate the effect of the common-mode input voltage limits by plotting out the overall dc transfer characteristic of the voltage follower and relating the features of the plot to the 741 parameters.

Chapter 6


VDD = "cc

R1

+L

lr

+

R2

+

-

lI

M. ll

(P

VlLI

f\

-Vs = -VEE Figure 6.64 Circuit for Problem 6.31.

6.31 Calculate the input referred random offset voltage of a bipolar differential pair with resistive loads driven by source followers, as shown in Fig. 6.64. Assume nonzero mismatch occurs in the following parameters: the thresholds of the MOS

transistors, the WIL of the MOS transistors, the bias currents, the saturation currents of the bipolar transistors, and the load resistors. Ignore the body effect.

References

487

REFERENCES 1. G. E. Tobey, J. G. Graeme, and L. P. Huels-

man. Operational AmpliJiers. McGraw-Hill, New York, 1971. 2. J. V. Wait, L. P. Huelsman, and G. A. Korn. Introduction to Operational AmpliJier Theory and Applications. McGraw-Hill, New York, 1975. 3. D. Fullagar. "A New High-Performance Monolithic Op Amp," Fairchild Semiconductor Applications BrieJ May 1968. 4. D. A. Hodges, P. R. Gray, and R. W. Brodersen. "Potential of MOS Technologies for Analog Integrated Circuits," IEEE Journal of Solid-State Circuits, Vol. SC-13, pp. 285-294, June 1978. 5. P. R. Gray and R. G. Meyer. "MOS Operational Amplifier Design-A Tutorial Overview," IEEE Journal of Solid-State Circuits, Vol. SC- 17, pp. 969-982, December 1982. 6. Y. P. Tsividis. "Design Considerations in Single-Channel MOS Analog Integrated CircuitsA Tutorial," IEEE Journal of Solid-State Circuits, Vol. SC-13, pp. 383-391, June 1978. 7. W. C. Black, Jr., D. J. Allstot, and R. A. Reed. "A High Performance Low Power CMOS Channel Filter," IEEE Journal of Solid-State Circuits, Vol. SC- 15, pp. 929-938, December 1980. 8. H. Ohara, P. R. Gray, W. M. Baxter, C. E Rahim, and J. L. McCreary. "A Precision LowPower PCM Channel Filter with On-Chip Power Supply Regulation," IEEE Journal of Solid-State Circuits, Vol. SC- 15, pp. 1005-1 0 13, December 1980.

9. G. Nicollini, P. Confalonieri, and D. Senderowicz, "A Fully Differential Sample-andHold Circuit for High-speed Applications," IEEE Journal of Solid-State Circuits, Vol. 24, pp. 14611465, October 1989. 10. T. C. Choi, R. T. Kaneshiro, R. W. Brodersen, P. R. Gray, W. B. Jett, and M. Wilcox. "HighFrequency CMOS Switched-Capacitor Filters for Communications Application," IEEE Journal of Solid-State Circuits, Vol. SC- 18, pp. 652-664, December 1983. 11. K. Bult and G. J. G. M. Geelen. "A FastSettling CMOS Op Amp for SC Circuits with 90dB DC Gain," IEEE Journal of Solid-State Circuits, Vol. 25, pp. 1379-1384, December 1990. 12. P. R. Gray and R. G. Meyer. Analysis and Design of Analog Integrated Circuits, Third Edition, Wiley, New York, 1993. 13. G. Erdi. "A Low-Drift, Low-Noise Monolithic Operational Amplifier for Low-Level Signal Processing," Fairchild Semiconductor Applications BrieJ July 1969. 14. G. Erdi. "A Precision Trim Technique for Monolithic Analog Circuits," IEEE Journal of Solid-State Circuits, Vol. SC-10, pp. 412416, December 1975. 15. R. J. Widlar. "Design Techniques for Monolithic Operational Amplifiers," IEEE Journal of Solid-State Circuits, Vol. SC-4, pp. 184-191, August 1969.

Frequency Responseof IntegratedCircuits 7.1 Introduction The analysis of integrated-circuit behavior in previous chapters was concerned with lowfrequency performance, and the effects of parasitic capacitance in transistors were not considered. However, as the frequency of the signal being processed by a circuit increases, the capacitive elements in the circuit eventually become important. In this chapter, the small-signal behavior of integrated circuits at high frequencies is considered. The frequency response of single-stage amplifiers is treated first, followed by an analysis of multistage amplifiers. Finally, the frequency response of the 741 operational amplifier is considered, and those parts of the circuit that limit its frequency response are identified.

7.2 Single-Stage Amplifiers The basic topology of the small-signal equivalent circuits of bipolar and MOS single-stage amplifiers are similar. Therefore in the following sections, the frequency-response analysis for each type of single-stage circuit is initially carried out using a general small-signal model that applies to both types of transistors, and the general results are then applied to each type of transistor. The general small-signal transistor model is shown in Fig. 7.1. Table 7.1 lists the parameters of this small-signal model and the corresponding parameters that transform it into a bipolar or MOS model. For example, Cin in the general model becomes C, in the bipolar model and C,, in the MOS model. However, some devicespecific small-signal elements are not included in the general model. For example, the g,o generator and capacitors CSband Cgbin the MOS models are not incorporated in the general model. The effect of such device-specific elements will be handled separately in the bipolar and MOS sections. The common-emitter and common-source stages are analyzed in the sections below on differential amplifiers. 7.2.1 Single-Stage Voltage Amplifiers and the Miller Effect

Single-transistor voltage-amplifier stages are widely used in integrated circuits. Figures 7 . 2 and ~ 7.2b show the ac schematics for common-emitter and common-source amplifiers with resistive loads, respectively. Resistance Rs is the source resistance, and RL is the load resistance. A simple linear model that can be applied to both of these circuits is shown in Fig. 7 . 2 ~The . elements in the dashed box form the general small-signal transistor model from Fig. 7.1 without r,. We will assume that the output resistance of the transistor r , is much larger than RL. Since these resistors are connected in parallel in the small-signal

7.2 Single-Stage Amplifiers B or G

rx

489

- CorD

ro

I

Figure 7.1 A general small-signal transistor model.

EorS

circuit, r, can be neglected. An approximate analysis of this circuit can be made using the Miller-effect approximation. This analysis is done by considering the input impedance seen looking across the plane AA in Fig. 7 . 2 ~To . find this impedance, we calculate the current il produced by the voltage v1 . il = (vl - vO)scf

(7.1)

KCL at the output node gives

+ - + (v, v0

- vl)sCf = 0 RL From (7.2),the voltage gain A , from v, to v, can be expressed as

g,v1

Using v,

=

(7.2)

AV(s)vlfrom (7.3) in (7.1) gives il = [l - A,(s)]sCf v l

Equation 7.4 indicates that the admittance seen looking across the plane AA has a value [l - A,(s)]sCf. This modification to the admittance sCf stems from the voltage gain across CS and is referred to as the Miller effect. Unfortunately, this admittance is complicated, due to the frequency dependence of AV(s). Replacing the voltage gain AV(s) in (7.4) with its low-frequency value AVo= Av(0), (7.4) indicates that a capacitance of

Table 7.1 Small-Signal Model Elements

/

General Model

/

Bipolar Model

/

MOS~odel

490

Chapter 7

Frequency Response of Integrated Circuits

Figure 7.2 ( a ) An ac schematic of a common-emitter amplifier. (b) An ac schematic of a commonsource amplifier. ( c )A general model for both amplifiers.

is seen looking across plane AA. The use of the low-frequency voltage gain here is called the Miller approximation, and CM is called the Miller capacitance. From (7.3), AVo = A,(O) = -gmRL; therefore, (7.5) can be written as The Miller capacitance is often much larger than Cf because usually gmRL >> 1. We can now form a new equivalent circuit that is useful for calculating the forward transmission and input impedance of the circuit. This is shown in Fig. 7.3 using the Millereffect approximation. Note that this equivalent circuit is not useful for calculating highfrequency reverse transmission or output impedance. From this circuit, we can see that at high frequencies the input impedance will eventually approach v,. The physical origin of the Miller capacitance is found in the voltage gain of the circuit. At low frequencies, a small input voltage v1 produces a large output voltage v, = AVovl = -gmRLvl of opposite polarity. Thus the voltage across Cf in Fig. 7 . 2 is ~ (1 + gmRL)vl and a correspondingly large current il flows in this capacitor. The voltage across CM

Figure 7.3 Equivalent circuit for Fig. 7 . 2 using ~ the Miller approximation.

7.2 Single-Stage Amplifiers

49 1

in Fig. 7.3 is only vl, but CM is larger than C f by the factor (1 + g,RL); therefore, CM conducts the same current as C f . In Fig. 7.3, the Miller capacitance adds directly to Cin and thus reduces the bandwidth of the amplifier, which can be seen by calculating the gain of the amplifier as follows:

where Ct

=

CM + -Cin

Substitution of (7.7) in (7.8) gives the gain ('I. 1Ua)

where K is the low-frequency voltage gain and p , is the pole of the circuit. Comparing (7.10a) and (7. lob) shows that

This analysis indicates that the circuit has a single pole, and setting s = jo in (7.10b) shows that the voltage gain is 3 dB below its low-frequency value at a frequency

As C*,RL, or RS increase, the -3-dB frequency of the amplifier is reduced. The exact gain expression for this circuit can be found by analyzing the equivalent circuit shown in Fig. 7.4. The poles from an exact analysis can be compared to the pole found using the Miller effect. In Fig. 7.4, a Norton equivalent is used at the input where

KCL at node X gives

492 Chapter 7

m


X

ii

0

Y

CIfI I I II

+

+ R

v1

-

Figure 7.4 Figure 7 . 2 redrawn ~ using a Norton equivalent circuit

-

KCL at node Y gives

Equation 7.16a can be written as

and thus 1 + scf RL -vo gm - scf -

v1 =


and the transfer function can be calculated as

Substitution of ii from (7.14) in (7.18) gives

Substitution of R from (7.13) into (7.19) gives, for the low-frequency gain,

as obtained in (7.10). Equation 7.19 shows that the transfer function volvi has a positive real zero with magnitude g m / C f .This zero stems from the transmission of the signal directly through C f to the output. The effect of this zero is small except at very high frequencies, and it will be neglected here. However, this positive real zero can be important in the stability analysis of some operational amplifiers, and it will be considered in detail in Chapter 9. The denominator of (7.19) shows that the transfer function has two poles, which are usually real and widely separated in practice. If the poles are at p1 and p2, we can write the denominator of (7.19) as

7.2 Single-StageAmplifiers

493

and thus

We now assume that the poles are real and widely separated, and we let the lower frequency pole be p1 (the dominant pole) and the higher frequency pole be p2 (the nondominant pole). Then ( p 2 (>> ] p l (and (7.22) becomes

If the coefficient of s in (7.23) is compared with that in (7.19), we can identify

If the value of R from (7.13) is substituted in (7.24), then the dominant pole is

This value of p, is almost identical to that given in (7.1 lb) by the Miller approximation. The only difference between these equations is in the last term in the denominator of (7.25), RLIR, and this term is usually small compared to the (1 + g,RL) term. This result shows that the Miller-effect calculation is nearly equivalent to calculating the dominant pole of the amplifier and neglecting higher frequency poles. The Miller approximation gives a good estimate of w -3dB in many circuits. Let us now calculate the nondominant pole by equating the coefficient of s2 in (7.23) with that in (7.19), giving

Substitution of p1 from (7.24) in (7.26) gives 1 + - +l R L C ~ RCin

1 RLG

+

")

Cin

The results in this section were derived using a general small-signal model. The general model parameters and the corresponding parameters for a bipolar and MOS transistor are listed in Table 7.1. By substituting values from Table 7.1, the general results of this section will be extended to the bipolar common-emitter and MOS common-source amplifiers, which appear in the half-circuits for differential amplifiers in the following sections. 7.2.1.1 The Bipolar Differential Amplifier: Differential-Mode Gain

A basic building block of analog bipolar integrated circuits is the differential stage shown in Fig. 7.5. For small-signal differential inputs at vi, the node E is a virtual ground, and we

494 Chapter 7


Figure 7.5 Bipolar differential amplifier circuit.

-VEE

can form the differential-mode (DM) ac half-circuit of Fig. 7.6a. The gain of this commonemitter circuit is equal to the DM gain of the full circuit. The circuit analysis that follows applies to this DM half-circuit as well as any single-stage common-emitter amplifier of the form shown in Fig. 7.6a. The small-signal equivalent circuit of Fig. 7.6a is shown in Fig. 7.6b and, for compactness, the factor of 112 has been omitted from the input and

(b)

Figure 7.6 (a) Differential-mode ac half-circuit for Fig. 7.5. (b) Small-signal equivalent circuit

for (a).


495

output voltages. This change does not alter the analysis in any way. Also, for simplicity, the collector-substrate capacitance of the transistor has been omitted. Since this capacitance would be connected in parallel with RL, its effect could be included in the following analysis by replacing RL with ZL, where ZL equals RL in parallel with C,,. The small-signal circuit in Fig. 7 . 2 becomes ~ the circuit in Fig. 7.6b when the bipolar model parameters in the second column of Table 7.1 are substituted for the general model parameters in Fig. 7 . 2 ~Therefore, . the analysis results from the previous section can be used here. Substituting the values in the second column of Table 7.1 into (7.19), the voltage gain is given by

where R

=

(Rs + rb)llr,. Using (7.25), the dominant pole is given by

Calculation of p1 using (7.11b), which is based on the Miller-effect approximation, gives

where

is the Miller capacitance. Equation 7.30 gives virtually the same p1 as (7.29) if RLIR g,l(C, + C,) = w~ and thus Jp21> W T . (Recall that is the transition frequency for the transistor, as defined in Chapter 1.) Consequently, ]p2] is a very high frequency; therefore, Ipl I is almost always much less than Jp21,as assumed. In the s plane, the poles of the amplifier are thus widely separated, as shown in Fig. 7.7. OT

S

X

X

P2

P1

plane

WC

Figure 7.7 Typical pole positions for the circuit in Fig. 7.4.

496 Chapter 7

m


EXAMPLE Using the Miller approximation, calculate the - 3-dB frequency of a common-emitter transistor stage using the following parameters:

Rs fT =

=

1 kfl

Yb =

400MHz(atIc

200a

=

Ic

=

1 rnA) C,

1 mA =

PO = 100

0.5pF RL

=

5kCl

The transistor small-signal parameters are

Using (1.129) gives

Thus C,

=

14.8 pF

Substitution of data in (7.3 1) gives for the Miller capacitance

This term is much greater than C, and dominates the frequency response. Substitution of values in (7.30) gives

Ipll

- l 1000+200+2600

1012 2 v (1000 + 200)2600 14.8 + 96.7

f-yB = - - -

2n-

=

1.74 MHz

For comparison, using (7.29) gives [pl( = 10.7 Mrad/s and fP3& = 1.70 MHz, which is in close agreement with the value using the Miller effect. The low-frequency gain can be calculated from (7.28) as

W

The gain magnitude at low frequency is thus 36.1 dB and the gain versus frequency on log scales is plotted in Fig. 7.8 for frequencies below and slightly above Ipl l. 7.2.1.2 The MOS Differential Amplifier: Differential-Mode Gain A MOS differential amplifier with resistive loads is shown in Fig. 7.9. The differential-

mode (DM) ac half-circuit and the corresponding small-signal circuit are shown in Figs. 7 . 1 0 ~and 7. lob, respectively. For compactness, the factor of 112 has been omitted from the input and output voltages in Fig. 7. lob, but this change does not alter the analysis in any way. This circuit is a common-source amplifier. The g,b generator and source-body capacitance Csb are not shown; they have no effect because vb, = 0 here. For simplicity, the drain-body capacitance Cdbof the transistor has been omitted. Since this capacitance would be connected in parallel with RL, its effect could be handled in the following analysis by replacing RL with ZL, where ZL equals RL in parallel with Cdb. For simplicity, the gate-body capacitance Cgbis ignored. It could be included by simply adding it to C,

7,2 Single-Stage Amplifiers

497

1.74 MHz

Figure 7.8 Gain magnitude versus frequency for the circuit in Fig. 7.3 using typical bipolar

transistor data.

since Cgb appears in parallel with Cg, in the common-source amplifier. However, usually C,, >> Cgb,SO Cgs+ Cgb '= Cgs. The analysis of this ac circuit applies to this DM half-circuit as well as any single-stage common-source amplifier of the form shown in if Fig. 7.10a. The small-signal circuit in Fig. 7.10b is the same as the circuit in Fig. 7 . 2 ~ we rename the model parameters as listed in Table 7.1. Therefore, we can use the results of the analysis of Fig. 7 . 2 ~Substituting . the values from the third column in Table 7.1 in (7.19), the exact transfer function is given by

Figure 7.9 MOS differential

amplifier circuit.

498

Chapter 7


(6)

Figure 7.10 ( a ) Differential-mode ac half-circuit for Fig. 7.9. (b) Small-signal equivalent circuit for ( a ) .

Using (7.25), the dominant pole is given by

Calculation of p1 using (7.1lb), which is based on the Miller-effect approximation, gives

is the Miller capacitance. Equation 7.35 gives nearly the same value for p1 as (7.34) if RLIRs grnl(Cg,+ Cgd + Cgb) = W T and thus Ip2/> WT. (Recall that w r is the transition frequency for the transistor, as defined in Chapter 1.) Consequently, Ip21 is a very high frequency; therefore, lpl l is almost always much less than IpzI.In the s plane, the poles of the amplifier are thus widely separated, as shown in Fig. 7.7.

7.2 Single-StageAmplifiers

499

EXAMPLE

Using the Miller approximation, calculate the sistor stage using the following parameters:

- 3-dB

frequency of a common-source tran-

f~ = 400 MHz (at ID = 1 rnA) Cgd = 0.5 pF

-

Cgb = 0 RL

=

5ka

The small-signal transconductance is

Using (1.207) from Chapter 1 and Cgb = 0 gives

c,,

14.1 m A N + Cgd = O T = Z.rr(400 MHz)

=

5.6 pF

Thus

Substitution of data in (7.36) gives for the Miller capacitance

This capacitance is much greater than Cg, and dominates the frequency response. Substitution of values in (7.35) gives

For comparison, using (7.34) gives [ p ll = 23.1 Mrads and f-3dB = 3.7 MHz, which is close to the result using the Miller effect. The low-frequency gain can be calculated from (7.33) as

7.2.2 Frequency Response of the Common-Mode Gain for a Differential Amplifier

In Chapter 3, the importance of the comrnon-mode (CM) gain of a differential amplifier was described. It was shown that low values of CM gain are desirable so that the circuit can reject undesired signals that are applied equaIly to both inputs. Because undesired CM signals may have high-frequency components, the frequency response of the CM gain is important. The CM frequency response of the differential circuits in Figures 7.5 and 7.9 can be calculated from the CM half-circuits shown in Figs. 7.11a and 7.11b. In Fig. 7.11, RT and CT are the equivalent output resistance and capacitance of the tail current source. Since impedances common to the two devices are doubled in the CM half-circuit, RT and CT become ~ R and T CT/2, respectively. A general small-signal equivalent circuit for . parallel combination of 2RT and CT/2 will be Fig. 7.1 1a-b is shown in Fig. 7 . 1 1 ~ The referred to as Z T .

500

Chapter 7


Figure 7.1 1 ( a ) Common-mode ac half-circuit for Fig. 7.5. ( h )Common-mode ac half-circuit for Fig. 7.9. (c) A general model for both half-circuits.

~ quite complex. Howcver, the important aspects The complete analysis of Fig. 7 . 1 1 is of the frequency response can be calculated by making some approximations. Consider the time constant RTCT.The resistance RT is the output resistance of the current source and is usually greater than or equal to the r, of a transistor. Let us assume that this resistance is on the order of 1 MC?.The capacitor CT includes C,, of the bipolar current-source transistor or Cdb of the current-source transistor plus CSbof the input transistors in the MOS circuit. Typically, CT is 1 pF or less. Using RT = 1 Mfl and CT = 1 pF, the time constant RTCT is 1 FS, and the break frequency corresponding to this time constant is 1/(2.;rrRTCT)= 166 kHz. Below this frequency the impedance ZT is dominated by RT, and above this frequency CT dominates. Thus as the frequency of operation is increased, the impedance ZT will exhibit frequency variation before the rest of the circuit. We now calculate the frequency response assuming that CT is the only significant capacitance. Since the impedance ZT is high, almost all of vi, appears across ZT if is small. Therefore, we can approximate the CM gain as

where


501


ACm(s)=

voc -(S) Vic

= --(lRL

~ R T

+ sCTRT)

Equation 7.40 shows that the CM gain expression contains a zero, which causes the CM gain to rise at 6 dB1octave above a frequency w = lIRTCT. This behavior is undesirable because the CM gain should ideally be as small as possible. The increase in CM gain cannot continue indefinitely, however, because the other capacitors in the circuit of Fig. 7. l l c eventually become important. The other capacitors cause the CM gain to fall at very high frequencies, and this behavior is shown in the plot of CM gain versus frequency in Fig. 7 . 1 2 ~ . The differential-mode (DM) gain Admof the circuit of Fig. 7.5 or 7.9 is plotted versus frequency in Fig. 7.12b using (7.10). As described earlier, IAd,l begins to fall off at a frequency given by f = 1/2rRCt, where R = (Rs+ rx)l\rinand C, = Gin + CM. As pointed out in Chapter 3, an important differential amplifier parameter is the commonmode rejection ratio (CMRR) defined as

The CMRR is plotted as a function of frequency in Fig. 7 . 1 2 ~by simply taking the magnitude of the ratio of the DM and CM gains. This quantity begins to decrease at frequency

Figure 7.12 Variation with frequency of the gain parameters for the differential amplifier in Fig. 7.5 or 7.9. ( a )Cornmonmode gain. (b) Differentialmode gain. ( c ) Common-mode rejection ratio.

502

Chapter 7


f = 1 / 2 r R T C T when IA, ( begins to increase. The rate of decrease of CMRR further increases when (Adm( begins to fall with increasing frequency. Thus differential amplifiers are far less able to reject CM signals as the frequency of those signals increases.

7.2.3 Frequency Response of Voltage Buffers

Single-stage voltage buffers are often used in integrated circuits. The ac circuits for bipolar and MOS voltage buffers are shown in Figs. 7 . 1 3 ~and 7.13b, respectively. A small-signal model that can be used to model both of these circuits is shown in Fig. 7 . 1 3 ~Resistance . Rs is the source resistance, and RL is the load resistance. We will assume that the output resistance of the transistor r, is much larger than RL. Since these resistors are in parallel in the small-signal circuit, r, can be neglected. The series input resistance in the transistor model and the source resistance are in series and can be lumped together as R: = Rs + r,. For simplicity, the effect of capacitor Cf in.Fig. 7.1 is initially neglected, a reasonable approximation if R; is small. The effect of Cf is to form a low-pass circuit with R,; and to cause the gain to decrease at very high frequencies. From Fig. 7.13c,

2.. =

v1

-

Zin

(c)

Figure 7.13 (a) An ac schematic of an emitter-follower amplifier. (b) An ac schematic of a

source-follower amplifier. (c) A general model for both amplifiers.

(7.43)


ii

v0 + gmvl = RL

503 (7.45)

Using (7.43) and (7.44) in (7.45) gives

and thus

Using (7.46) and (7.43) in (7.42) gives

Collecting terms in this equation, we find

where

P1 =

1 RI Gin

--

with

Equation 7.47 shows that, as expected, the low-frequency voltage gain is about unity if g,RL >> 1 and g,RL >> (R$ + RL)lrin.The high-frequency gain is controlled by the presence of a pole at p1 and a zero at zl. 7.2.3.1 Frequency Response of the Emitter Follower

The small-signal circuit for the emitter follower in Fig. 7 . 1 3 ~is shown in Fig. 7.14. We initially ignore C,, as in the general analysis in Section 7.2.3. The transfer function for the emitter follower can be found by substituting the appropriate values in Table 7.1 into (7.47) through (7.50). If g, RL >> 1 and gmRL >> (R; + RL)IrT,where R$ = Rs + r b , the low-frequency gain is about unity. The zero and pole are given by

504

Chapter 7


Figure 7.14 Small-signal model for the emitter follower in Fig. 7 . 1 3 ~ .

where

Typically, the zero has a magnitude that is slightly larger than the pole, and both are approximately equal to w~ of the device. In particular, if gmRL >> l and R$ (Rs + rb), a comparison of (7.60) and (7.61) shows that (zoJdecreases as frequency increases and the output impedance appears capacitive. However, at collector currents of more than several hundred micro amperes, we usually find that llg, < (Rs + Q). Then lzol increases with frequency, which represents inductive behavior that can have a major influence on the circuit behavior, particularly when driving capacitive loads. If l/g, = (Rs + rb) then the output impedance is resistive and independent of frequency over a wide bandwidth. To maintain this condition over variations in process, supply, and temperature, practical design goals are Rs = l/g, and r b > 1 for the bipolar transistor. If transistors T1 and T2 have equal bias currents and device dimensions, then g , ~ = gm2. Since the load resistance seen by T 1 is about 11gm2,the magnitude of the voltage gain from vi to v, is about unity. Thus the influence of the Miller effect on T1 is minimal, even for fairly large values of RL. Since the current-buffer stage T2 has a wide bandwidth (see Section 7.2.4), the cascode circuit -+

1

526

Chapter 7

Frequency Response ofhegrated Circuits

(b)

Figure 7.29 Cascode circuit connections ( a ) bipolar and (b) MOS.

overall has good high-frequency performance when compared to a single common-emitter or common-source stage, especially for large RL. (See problems 7.29 and 7.30.) If the assumption that rO2 -+ is removed, the magnitude of the voltage gain from vi to v, can be larger than one. For example, RL might be the output resistance of a cascoded current source in an amplifier stage. In this case, RL is large compared to r,~,and the input resistance of the current buffer T2 is given by

from Section 3.3.5.1 [ignoring body effect in the MOS transistor and assuming rb/(POt l ) > 1 for the bipolar transistor]. Since this resistance is significantly bigger than l/gm2when RL >> ro2,the magnitude of the gain from vi to v, can be significantly larger than one. However, this gain is still much smaller in magnitude than the gain from vi to v,; therefore, the Miller effect on T1 is smaller with the cascode transistor T2 than without it. To further reduce the Miller effect when RL is large, the input resistance of the current buffer in (7.132) can be reduced by replacing the cascode transistor with the active cascode shown in Chapter 3. A useful characteristic of the cascode is the small amount of reverse transmission that occurs in the circuit. The current-buffer stage provides good isolation that is requiredin highfrequency tuned-amplifier applications. Another useful characteristic of the cascode is its high output resistance. This characteristic is used to advantage in current-source design, as described in Chapter 4, and in operational amplifier design, as described in Chapter 6. As an example of the calculation of the -3-dB frequency of a cascode amplifier, consider the circuit of Fig. 7.30. The input differential pair is biased using a resistor R3. If

-

-

i f 3 Multistage Amplifier Frequency Response

v

-

527

-

-VEE

Figure 7.30

Cascode differential amplifier.

comrnon-mode rejection is an important consideration, R3 can be replaced with an active current source. The resistive divider composed of RI and R2 sets the bias voltage at the bases of Q3 and Q4, and this voltage is chosen to give adequate collector-emitter bias voltage for each device. For purposes of analysis, the circuit is assumed driven with source resistance Rs from each base to ground. If the base of Q2 is grounded, the frequency response of the circuit is not greatly affected if Rs is small. The circuit of Fig. 7.30 can be analyzed using the ac differential half-circuit of Fig. 7.3 l a . Note that in forming the differential half-circuit, the common-base point of Q3 and Q4 is assumed to be a virtual ground for differential signals. The frequency response (v,lv,)( j w ) of the circuit of Fig. 7.3 la will be the same as that of Fig. 7.30 if R3 in Fig. 7.30 is large enough to give a reasonable value of common-mode rejection. The small-signal equivalent circuit of Fig. 7.31a is shown in Fig. 7.31b. I

EXAMPLE Calculate the low-frequency, small-signal gain and -3-dB frequency of the circuit of Fig. 7.30 using the following data: Rs = 1 k n , RE = 75 a, Rg = 4 kfi, RL = 1 k 0 , RI = 4 k a , R2 = lOkfi, and Vcc = VEE= 10V. Devicedataarep = 200, VB,qon) = 0.7 V, TF = 0.25 ns, rb = 200 R, r,(active region) = 150 a,C j e o = 1.3 pF, CPo = = 0.58 V, and n, = 0.5. 0.6pF, = 0.6 V, CCso= 2pF, The dc bias conditions are first calculated neglecting transistor base currents. The voltage at the base of Q3 and Q4 is

The voltage at the collectors of Ql and Q2 is

528

Chapter 7 a Frequency Response of Integrated Circuits

"S

2

-(b)

Figure 7.31 (a) The ac differential half-circuit of Fig. 7.30. (b) Small-signal equivalent of the circuit in (a).

Assuming that the bases of Ql and Q2 are grounded, we can calculate the collector currents of Q,and Q2 as

The dc analysis is completed by noting that the voltage at the collectors of Q3 and Q4 is VC3 = VCC - IC3RL = 10 V

-

1.15V = 8.85 V

The low-frequency gain can be calculated from the ac differential half-circuit of Fig. 7.3 la, using the results derived in Chapter 3 for a stage with emitter resistance. If we neglect base resistance, the small-signal transconductance of Ql including RE is given by (3.93) as

The small-signal input resistance of Q l including RE is given by (3.90) as Ril = r,l

+ ( p + l)RE = 19.5 k i l

As shown in Chapter 3, the common-base stage has a current gain of approximately unity, and thus the small-signal collector current of Q1 appears in the collector of Q3.By inspection, the voltage gain of the circuit of Fig. 7.3 1a is

To calculate the - 3-dB frequency of the circuit, the parameters in the small-signal equivalent circuit of Fig. 7.3 1b must be determined. The resistive parameters are gl, = gm3 = qIcllkT = 44.2 M ,r,l = r,s = plgml = 4525 il, r,l = r,g = 150 Q, rbl =

7.3 Multistage Amplifier Frequency Response

529

rb3 = 200 0 , and Rs + rb = 1.2 kR. Because of the low resistances in the circuit, transistor output resistances are neglected. The capacitive elements in Fig. 7.31b are calculated as described in Chapter 1. First consider base-emitter, depletion-layer capacitance Cj,. As described in Chapter 1, the value of Cje in the forward-active region is difficult to estimate, and a reasonable approximation is to double Cjeo. This gives Cje = 2.6 pF. From (1.104) the base-charging capacitance for Ql is

Use of (1.118) gives

Since the collector currents of Q, and Q3 are equal, CT3 = CT1 = 13.7 pF. The collector-base capacitance C, of Ql can be calculated using ( 1.117a) and noting that the collector-base bias voltage of Ql is Vcsl = 3.6 V. Thus

The collector-substrate capacitance of Q l can also be calculated using (1.117a) with a collector-substrate voltage of Vcs = Vcl -k VEE = 13.6 V. (The substrate is assumed connected to the negative supply voltage.) Thus we have

Similar calculations show that the parameters of Q3 are CF3 = 0.20 pF and Ccs3 = 0.35 pF. The -3-dB frequency of the circuit can now be estimated by calculating the zerovalue time constants for the circuit. First consider CT1. The resistance seen across its terminals is given by (7.122), which was derived for the emitter follower. The presence of resistance in series with the collector of Ql makes no difference to the calculation because of the infinite impedance of the current generator g,l v1 . Thus from (7.122)

Note that the effect of RE is to reduce RTol,which increases the bandwidth of the circuit by reducing the zero-value time constant associated with CT1. This time constant has a value The collector-substrate capacitance of Ql sees a resistance equal to r,l plus the commonbase stage input resistance, which is

and thus CCs1sees a resistance

530 Chapter 7


Figure 7.32 (a) Circuit for the calculation of RPolfor Q , . (b) Equivalent circuit for the circuit

in (a).

The zero-value time constant is The zero-value time constant associated with C P 1of Ql can be determined by calculating the resistance RPol seen across the terminals of CP1using the equivalent circuit of Fig. 7 . 3 2 ~To . simplify the analysis, the circuit in Fig. 7 . 3 2 is ~ transformed into the circuit of Fig. 7.32b, where the transistor with emitter degeneration is represented by parameters Ril and G,,1, which were defined previously. The circuit of Fig. 7.32b is in the form of a common-emitter stage as shown in Fig. 7.25, and the formula derived for that case can be used now. Thus from (7.117) where The load resistance RL1 is just calculated values, we obtain

rcl

plus the input resistance of Q3.Using the previously RLl = 174 IR

Substituting into (7.133) gives


53 1

The zero-value time constant associated with CP1is thus

C P 1RPol = 0.23 X 3.27 ns

=

0.75 ns

Because the input impedance of the common-base stage is small, the contribution of C P 1 to the sum of the zero value time constants is much smaller than that due to CT1. The time constant associated with CTgof Q3 can be calculated by recognizing that (7.122) derived for the emitter follower also applies here. The effective source resistance Rs is zero as the base is grounded, and the effective emitter resistance RL is infinite because the collector of Ql is connected to the emitter of Q3. Thus (7.122) gives

The zero-value time constant associated with CTgis thus The time constant associated with collector-base capacitance Cp3of Q3 can be calculated using (7.133) with Gml equal to zero since the effective value of RE is infinite in this case. In (7.133) the effective value of RI is just rb and thus

and RL3 is the load resistance seen by Q3. Thus

and the time constant is

CP3Rpo3= 0.2

X

1.35 ns

=

0.27 ns

Finally, the collector-substrate capacitance of Q3 sees a resistance and

Ccs3RcsO3 = 0.35 X 1.15 ns

=

0.4 ns

The sum of the zero-value time constants is thus The -3-dB frequency is estimated as f-3d~ =

I

1 - 28.4 MHz --

2.rrXTo

Computer simulation of this circuit using SPICE gave a -3-dB frequency of 34.7 MHz. The computer simulation showed six poles, of which the first two were negative real poles with magnitudes 35.8 MHz and 253 MHz. The zero-value time constant analysis has thus given a reasonable estimate of the -3-dB frequency and has also shown that the major limitation on the circuit frequency response comes from Cml of Q l . The circuit can thus be broadbanded even further by increasing resistance RE in the emitter of Q,,since the calculation of RTol showed that increasing RE will reduce the value of RTol. Note that this change will reduce the gain of the circuit.

532 Chapter 7


Further useful information regarding the circuit frequency response can be obtained from the previous calculations by recognizing that Q3 in Fig. 7.3 1 effectively isolates CcL3 and Ccs3from the rest of the circuit. In fact, if r b 3 is zero then these two capacitors are connected in parallel across the output and will contribute a separate pole to the transfer function. The magnitude of this pole can be estimated by summing zero-value time constants for CpS and Ccs3alone to give CTo = 0.67 ns. This time constant corresponds to a pole with magnitude 1/(2n-2To) = 237 MHz, which is very close to the second pole calculated by the computer. The dominant pole would then be estimated by summing the rest of the time constants to give CTo = 4.93 ns, which corresponds to a pole with magnitude 32.3 MHz and is also close to the computer-calculated value. This technique can be used any time a high degree of isolation exists between various portions of a circuit. To estimate the dominant pole of a given section, the zero-value time constants may be summed for that section. In this example, the bandwidth of the differential-mode gain was estimated by computing the zero-value time constants for the differential half-circuit. The bandwidth of the common-mode gain could be estimated by computing the zero-value time constants for the common-mode half-circuit.

7.3.5 Frequency Response of a Current Mirror Loading a Differential Pair A CMOS differential pair with current-mirror load is shown in Fig. 7 . 3 3 ~ The . current mirror here introduces a pole and a zero that are not widely separated. To show this result, consider the simplified small-signal circuit in Fig. 7.33b for finding the transconductance G, = iolvid with v, = 0. The circuit has been simplified by letting r, + a for all transistors and ignoring all capacitors except C,. Here C, models the total capacitance from node X to ground, which consists of Cgs3,Cgs4,and other smaller capacitances. With a purely differential input, node Y is an ac ground. The zero-value time constant associated with C, is To = C,lgm3; therefore,

An exact analysis of this circuit yields a transfer function with a pole given by (7.134) and a zero at z = -2gm3/C,. (See problem 7.48.) The magnitudes of the pole and zero are separated by one octave. The magnitude and phase responses for G,(s) are plotted in Fig. 7.34. The phase shift from this pole-zero pair is between 0 and - 19.4 degrees. The frequency-response plot can be explained as follows. The drain currents in the differential pair are idl = gmlvid/2and id2 = -gmlvid/2. At low frequencies, M gand M4 mirror idl, giving for the output current

At high frequencies (a -. a),C, becomes a short, so v,,4

+

0 and id4 -+ 0. Therefore,

These equations show that the transconductance falls from g,l at low frequencies to gm112 at high frequencies. This result stems from the observation that the current mirror does not contribute to the output current when C, becomes a short. The change in the transconductance occurs between frequencies (p1 and 121. This analysis shows that the pole and zero are both important in this circuit. Since C, -- Cgs3 Cgs4 = 2Cgs3, (7.134) gives Ip1 " gm3/2Cgs3= ~ ~ ( ~ Therefore, ~ ) / 2 . the pole-zero pair has an effect only at very high

+

7.3 Multistage Amplifier Frequency Response 533

(b)

Figure 7.33 (a) Differential pair with current-mirror load and ( 6 ) a simplified small-signal model.

frequencies, and the effect of this pair is much less than that of either an isolated pole or zero. Analysis of a bipolar version of the circuit in Fig. 7.33a gives a similar result.

7.3.6 Short-circuit Time Constants Zero-value time-constant analysis (which is sometimes called open-circuit time-constant anaIysis) can be used to estimate the smallest-magnitude pole of an amplifier. This estimated pole magnitude is approximately equal to the -3-dB frequency of the gain of a dc-coupled amplifier with a low-pass transfer function. Another type of time-constant analysis is called short-circuit time-constant analysis. Short-circuit time constants can be used to estimate the location of the largest-magnitude pole. While short-circuit time-constant analysis is often used to estimate the lower -3-dB frequency in ac-coupled amplifiers,1,2 we will use these time constants to estimate the magnitude of the nondominant pole in dc-coupled amplifiers that have only two widely spaced, real poles.

534 Chapter 7


blkl

Frequency (radls)

bllzl

Frequency (radls)

(4

Q

Gm

(degrees)

Figure 7.34 (a) Magnitude and (b) phase versus frequency of the transconductance G,, for the circuit in Fig. 7.33.

= i,lvid

The short-circuit time-constant formulas will be derived for the small-signal circuit in Fig. 7.24. Equations 7.91 to 7.93 describe this circuit, and (7.94) is the determinant A(s) of these equations. This determinant can be written as

since the zeros of A(s) are the poles of the transfer function. Expanding the right-most expression and equating the coefficients of s2 gives

Now a formula for calculating K2/K3 will be derived. Evaluating the determinant of the circuit equations in (7.91) to (7.93),the term K3 that multiplies s3 in (7.94) is given


535

by K3 = C,C, C,

(7.139)

and the K2 term is K2

=

gllC&~

+g 2 2 c ~ + c ~g33C,cEL

(7.140)

From (7.139) and (7.140), the ratio K2/K3 is

where rii = llgii. Now, let us examine each term in the right-most expression. The first term is ll(rl C,). Using (7.91), rll = l/gl can be found as

That is, rll is the resistance in parallel with C,, computed with C, removed from the circuit and with the other capacitors C, and C, shorted. (Note that shorting C, makes v2 = 0; shorting C, makes vs = 0.) Therefore, the product rllC, is called the shortcircuit time constant for capacitor C,. Similarly, from (7.92)

This r22 is the resistance in parallel with C,, computed with C, removed from the circuit and with the other capacitors C, and C, shorted. Finally, from (7.93)

So r33 is the resistance in parallel with C,, computed with C, removed from the circuit and with the other capacitors C, and C, shorted. Using (7.142) to (7.144), (7.141) can be rewritten as

where r,i is the short-circuit time constant associated with the ith capacitor in the circuit. The short-circuit time constant for the ithcapacitor is found by multiplying its capacitance by the driving-point resistance in parallel with the ith capacitor, computed with all other capacitors shorted. Combining (7.138) and (7.145) gives

This key equation relates the sum of the poles and the sum of the reciprocals of the shortcircuit time constants. This relationship holds true for any small-signal circuit that consists of resistors, capacitors, and controlled sources, assuming that the circuit has no loops of capacitors.' If a circuit has n poles and pole p, has a magnitude that is much larger than the magnitude of every other pole, then a general version of (7.146) can be written as

536

Chapter 7


For a circuit that has only two widely spaced, real poles, (7.147) simplifies to

This simple relationship allows the magnitude of the nondominant pole to be readily estimated from the short-circuit time constants. EXAMPLE

Estimate the nondominant pole magnitude for the circuit in Fig. 7.35 with Rs = 10 k a

C,,

=

1 pF

RL = 10 k a

Cf = 20 pF

g,

=

3 mAN

This circuit has two poles because it has two independent capacitors. First, we will 1 Cf. With C,, shorted and the indepencalculate the short-circuit time constant ~ $ for dent source set to zero, we have v1 = 0, so the current through the dependent source is also zero. Therefore, the resistance seen by C f is just RL, and the corresponding time constant is

To find the short-circuit time constant for C,,, we short Cf and find the resistance seen by C,, .With C f shorted, the dependent source is controlled by the voltage across it; therefore, it acts as a resistance of llg,. This resistance is in parallel with RL and Rs, so the shortcircuit time constant for C,, is

From (7.148), 1 200ns

+ 0.312ns

=

-3.21 Grads

(7.150)

if the poles are real and widely spaced. An exact analysis of this circuit gives p2 = -3.20 Grads, which is very close to the estimate above, and p1 = - 156 krad/s. Using zero-value time constants, the dominant-pole magnitude can be estimated. From (7.124), the zero-value time constant for Cf is

Figure 7.35 Example circuit for calculating

short-circuit time constants.

7.4 Analysis of the Frequency Response of the 741 Op Amp

537

The zero-value time constant for C,, is simply Therefore, (7. l l l ) gives

Exact analysis of this circuit gives p1 = - 156 kradls, which is the same as the estimate above. This example demonstrates that for circuits with two widely spaced, real poles, time constant analyses can give accurate estimates of the magnitudes of the dominant and nondominant poles. In this case of wideIy spaced poles, note that p1 and p2 can be accurately estimated using only one time constant for each pole. Since Cf is large compared to C,, and the resistance Cf sees when computing its zero-value time constant is large compared to the resistance seen by Cgs,a reasonable conclusion is that C,, has negligible effect near the frequency / p lI. Therefore, the most important zero-value time constant in (7.l l l ) for estimating p1 is the time constant for Cf (computed with Cgs replaced with an open circuit). Using only that time constant from (7.15 l), we estimate 1 P I " - - 6.4 - v s - - 156 kradfs which is a very accurate estimate of p ] . If the real poles are widely separated and the dominant pole was set by Cf, a reasonable assumption is that C f is a short circuit near the frequency (p21.Therefore, the important short-circuit time constant in (7.150) is the time constant for C,,, computed with Cf shorted. Using only that time constant from (7.149) in (7.148) gives

B

which is an accurate estimate of p;?. This last set of calculations shows that if two real poles are widely spaced and if one capacitor is primarily responsible for p1 and another capacitor is responsible for p;?,we need only compute one zero-value time constant to estimate p1 and one short-circuit time constant to estimate p;?.

7.4 Analysis of the Frequency Response of the 741 O p Amp Up to this point the analysis of the frequency response of integrated circuits has been limited to fairly simple configurations. The reason for this is apparent in previous sections, where the large amount of calculation required to estimate the dominant pole of some simple circuits was illustrated. A complete frequency analysis by hand of a large integrated circuit is thus out of the question. However, a circuit designer often needs insight into the frequency response of large circuits such as the 741 op amp, and, by making some sensible approximations, the methods of analysis described previously can be used to provide such information. We will now illustrate this by analyzing the frequency response of the 741.

7.4.1 High-Frequency Equivalent Circuit of the 741 A schematic of the 741 is shown in Fig. 6 . 3 2 ~Its . frequency response is dominated by the 30-pF integrated capacitor C,, which is a compensation capacitor designed to prevent the

538

Chapter 7


= = + Figure 7.36

An ac schematic of the high-frequency gain path of the 741.

circuit from oscillating when connected in a feedback loop. The choice of C, and its function are described in Chapter 9. Since the 741 contains over 20 interconnected transistors, a complete analysis is not attempted even using zero-value time-constant techniques. In order to obtain an estimate of the frequency response of this circuit, the circuit designer must be able to recognize those parts of the circuit that have little or no influence on the frequency response and to discard these from the analysis. As a general rule, elements involved in the bias circuit can often be eliminated, and those portions of the circuit that are differential can be replaced by a half-circuit. This approach leads to the ac schematic of Fig. 7.36, which is adequate for an approximate calculation of the high-frequency behavior of the 741. All bias elements have been eliminated except where they contribute parasitic elements to the gain path, and these are represented by RP,, C p l ,Rp2,and Cp2.In the output stage, either Q14or Qzowill be conducting, depending on whether the output voltage is positive or negative, and the frequency response of the circuit will be slightly different in these two cases. Transistor QI4is assumed conducting in the schematic of Fig. 7.36. The major approximation in Fig. 7.36 is neglect of the frequency limitations of the input-stage active load that has been eliminated from the gain path. However, the output resistance and capacitance of Q6 are included as part of Rpl and C p l .More detailed calculation and computer simulation show that these are reasonable approximations. As mentioned above, the frequency response of the 741 is dominated by C,, and the -3-dB frequency can be estimated by considering the effect of this capacitance alone. However, as described in Chapter 9, the presence of poles other than the dominant one has a crucial effect on the behavior of the circuit when feedback is applied. The magnitude of the nondominant poles is thus of considerable interest, and methods of estimating their magnitudes are described. First we calculate the -3-dB frequency of the circuit. 7.4.2 Calculation of the - 3-dB Frequency of the 741 The -3-dB frequency of the circuit of Fig. 7.36 can be estimated by calculating the zerovalue resistance Rco seen by C,. This can be calculated from the ac circuit of Fig. 7.37a, where the input resistance of QZ3is assumed very high and is neglected. The calculation of Rco can be greatly simplified by representing the circuit of Fig. 7 . 3 7 ~as shown in Fig. 7.37b. Quantities Ri,, R,,, and G,, are the input resistance, output resistance, and

7.4 Analysis of the Frequency Response of the 741 Op Amp

539

Figure 7.37 (a) Circuit for the calculation of the zero-value time constant for C,. (b) Equivalent circuit for the circuit in (a).

transconductance, respectively, of the circuit of Fig. 7.37a. These quantities were calculated in Chapter 6 using nominal device data but a more accurate calculation allowing for p variation with bias current yields the following values: . Ric

=

Ro4(JRpllJRi16 = 1.95 MK?

R,,

=

RoI7(IRp2= 86.3 k n

Gm, = 6.39 mAN

Note that RP1is the effective output resistance of Q6 and RPz is the effective output resistance of Q13Bin the schematic of Fig. 6.32a. Since the circuit of Fig. 7.37b is topologically the same as that of Fig. 7.24, (7.117) can now be used to estimate Rco.

This extremely large resistance when combined with C,

=

30 pF gives a time constant

This totally dominates the sum of the zero-value time constants and gives a -3-dB frequency of

A computer simulation of the complete 741 gave f-3dB = 5.0 Hz. An alternative means of calculating the effect of the frequency compensation is using the Miller effect as described in Section 7.2.1. The compensation capacitor is connected from the base of QI6to the collector of QI7and the voltage gain between these two points can be calculated from the equivalent circuit of Fig. 7.376:

540

Chapter 7 1 Frequency Response of Integrated Circuits

From (7.5) the Miller capacitance seen at the base of QI6 is CM = (1 - A,)C,

and substitution of (7.153) in (7.154) gives

This extremely large effective capacitance at the base of Q16swamps all other capacitances and, when combined with resistance Ri, = 1.95 M f l from the base of Q16to ground, gives a - 3-dB frequency for the circuit of

This is the same value as predicted by the zero-value time-constant approach. Note that an additional capacitor is introduced into the circuit along with C,. This is the capacitance described in Chapter 2 from the underside of C, to the substrate. In this case, capacitor C, is connected so that the parasitic capacitance exists from the base of Q16 to ground and is thus swamped by the Miller effect due to C,. The parasitic capacitance has a relatively large value (about 14 pF) because of the large area of the 30-pF capacitor. This capacitor consumes an area 16 rnil square in a chip that is 56 mil square, and thus occupies an area about 13 times that of a typical transistor in the circuit. (1000 mil = 1 inch = 25.4 mm.) It is interesting to note that if the compensation capacitor is removed and the zerovalue time constants of the circuit are calculated, then the -3-dB frequency of the circuit is found to be 18.9 kHz.This is dominated by the capacitance Cpl, which is about 3.4 pF and is composed largely of collector-substrate capacitance from Q6 and Q22.The resistance seen by Cpl is Ric = 1.95 Mln as calculated above, giving a time constant of 6.6 ps. 7.4.3 Nondominant Poles of the 741

The foregoing calculations have shown that the 30-pF compensation capacitor produces a dominant pole in the 741 with a magnitude of 4.9 Hz. From the complexity of the circuit it is evident that there will be a large number of poles with larger magnitudes that we now consider. Transistors Q16and QI7form the gain stage around which the compensation capacitor is connected. After C, is connected, the transfer function of this pair contains a pole with a magnitude of 4.9 Hz plus higher frequency poles. As shown in Chapter 9, these higher frequency poles are much less significant after C, is connected, but they still contribute phase shift at the unity-gain frequency of the amplifier (which is about 1.25 MHz). The exact calculation of these higher frequency poles is quite difficult, however. Other sources of higher frequency poles are the active load, which has been omitted from Fig. 7.36, and also the lateral pnp emitter follower Q23.Computer simulation shows that both of these parts of the circuit contribute phase shift at the unity-gain frequency of 1.25 MHz. As in the previous case, hand calculation of the frequency response of these portions of the circuit is difficult and requires consideration of all parasitic elements.

7,4 Analysis of the Frequency Response of the 741 Op Amp

541

Figure 7.38 Small-signal equivalent

circuit of Q4 in Fig. 7.36. There is, however, one portion of the circuit of Fig. 7.36 that contributes a nondominant pole that can be calculated. This is the lateral pnp common-base stage Q4. This stage is driven by the n p n emitter follower Q 2 , which may be assumed to have a frequency response that is much broader than that of Q4 because the fT of an n p n device is much higher than that of a lateral pnp. Neglecting frequency effects in Q2, we may assume that Q4 is fed by vi in series with l/gm2,which is the resistance seen looking into the emitter of Q2 if Rs is small. In addition, the collector of Q4 may be assumed to be feeding an ac short circuit, since the large Miller capacitance produced by C, results in a very low impedance at the collector of Q4. The small-signal equivalent circuit of Q4 can thus be drawn as in Fig. 7.38, and this is effectively isolated from the rest of the circuit. As a result, this stage contributes a separate pole whose magnitude can now be estimated using zero-value time-constant techniques. Note that rb4 and Cp4 are neglected. We first calculate the small-signal parameters of the circuit of Fig. 7.38. The bias levels were calculated in Chapter 6 as Ic2 = -IC4 = 12 FA and thus gm2 = g,4 = 0.46 m m .A typical value of C j e for a lateral pnp in forward bias is 0.6 pF. Assuming TF = 25 ns for the lateral pnp, we can calculate the base charging capacitance for Q4 using (1.104) in Chapter 1:

Using (l.l 18) gives Even at this low bias current, the C, of the lateral pnp is still dominated by Cb because the transit time TF is SO large. The magnitude of the pole contributed by Q 4 can now be calculated by determining the resistance RTo4seen by CT4.This is simply l/gm2in parallel with the input resistance Thus of Q4, which is approximately l/gnZ4.

and, consequently,

The magnitude of the pole contributed by Q4 is thus

A negative real pole at - 15 MHz appears in the poles and zeros of the 741 as calculated by computer and described in Chapter 9. This is the pole contributed by Q4, and the slight difference in magnitude from the value calculated above is due to the more accurate

542 Chapter 7


modeling in the computer. Note that a pole with magnitude 12.6 MHz contributes 6•‹of phase shift at the unity-gain frequency of 1.25 MHz and this is a significant amount. However, nondominant poles contributed by QI6, QI7, QZ3,and the active load also produce significant phase shift at the unity-gain frequency, and an accurate estimate of the total circuit phase shift can only be made by computer simulation or direct measurement. However, the calculations of this section allow the designer to isolate those parts of the circuit contributing excess phase shift and to make design changes where necessary to improve this aspect of circuit performance.

7.5 Relation Between Frequency Response and Time Response In this chapter the effect of increasing signal frequency on circuit performance has been illustrated by considering the circuit response to a sinusoidal input signal. In practice, however, an amplifier may be required to amplify nonsinusoidal signals such as pulse trains or square waves. In addition, such signals are often used in testing circuit frequency response. The response of a circuit to such input signals is thus of some interest and will now be calculated. Initially we consider a circuit whose small-signal transfer function can be approximated by a single-pole expression

where K is the low-frequency gain and p1 is the pole of the transfer function. As described earlier, the -3-dB frequency of this circuit for sinusoidal signals is w-3d~ = - p , . NOW consider a small input voltage step of amplitude v, applied to the circuit. If we assume that the circuit responds linearly, we can use (7.156) to calculate the circuit response using vi(s) = V,/$. Thus

and the circuit response to a step input is The output voltage thus approaches Kv, and the time constant of the exponential in (7.157) together with vi. The rise time of the is - U p l . Equation 7.157 is sketched in Fig. 7 . 3 9 ~ output is usually specified by the time taken to go from 10 percent to 90 percent of the final value. From (7.157) we have

From (7.158) and (7.159) we obtain, for the 10 percent to 90 percent rise time,

This equation shows that the pulse rise time is directly related to the -3-dB frequency of the circuit. For example, if f-3dB = 10 MHz, then (7.160) predicts t, = 35 ns. If a square wave is applied to a circuit with a single-pole transfer function, the response is as shownin Fig. 7.39b. The edges of the square wave are rounded as described above for a single pulse,

7.5 Relation Between Frequency Response and Time Response

t,.= 10%

543

- 90% rise time

Figure 7.39 ( a ) Step response of a linear circuit with gain K and a single-pole transfer function. (b) Response of a linear circuit with a single-pole when a square-wave input is applied.

The calculations in this section have shown the relation between frequency response and time response for small signals applied to a circuit with a single-pole transfer function. For circuits with multiple-pole transfer functions, the same general trends apply, but the pulse response may differ greatly from that shown in Fig. 7.39. In particular, if the circuit transfer function contains complex poles leading to a frequency response with a high-frequency peak (see Chapter 9), then the pulse response will exhibit overshoot3 and

544 Chapter 7


t

Figure 7.40 Typical step response of a linear circuit whose transfer function contains complex poles.

damped sinusoidal oscillation as shown in Fig. 7.40. Such a response is usually undesirable in pulse amplifiers. Finally, it should be pointed out that all the foregoing results were derived on the assumption that the applied signals were small in the sense that the amplifier acted linearly. If the applied pulse is large enough to cause nonlinear operation of the circuit, the pulse response may differ significantly from that predicted here. This point is discussed further in Chapter 9.

PROBLEMS 7.1 (a) Use the Miller approximation to calculate the -3-dB frequency of the small-signal voltage gain of a common-emitter transistor stage as shown in Fig. 7 . 2 using ~ Rs = 5 kfl, RL = 3 kfl, and the following transistor parameters:

300 f l , I, = 0.5 mA, p = 200, fT = 500 MHz (at I, = 0.5 mA), C, = 0.3 pF, C,, = 0, and V A = m. (b) Calculate the nondominant pole magnitude for the circuit in (a). Compare your answer with a SPICE simulation. 7.2 Repeat Problem 7.1 for the MOS commonsource stage shown in Fig. 7.2b using Rs = 10 kR, RL = 5 kfl, ID = 0.5 mA, and the following NMOS transistor data: rb =

NMOS: W = 100 Km, Ldrwn= 2 pm, Ld = 0.2 bm, Xd = 0, h = 0, k; = 60 p A N 2 , y = 0, C.,b = Cdb = 0, Cox= 0.7 fF/(p,m2), and CRd = 14 fF. 7.3 Calculate an expression for the output impedance of the circuit in Problem 7.1 as seen by RL and form an equivalent circuit. Plot the magnitude of this impedance on log scales from f = 1 kHzto f = 100MHz.

7.4 Repeat Problem 7.3 for Rs = 0 and

Rs

=

M.

7.5 Repeat Problem 7.3 for the MOS circuit in Problem 7.2. 7.6 A bipolar differential amplifier as shown in Fig. 7.5 has IEE = 1 mA. The resistor values and transistor data are as given in Problem 7.1. If the tail current source has an associated resistance RT = 300 kR and capacitance CT = 2 pF as defined in Fig. 7.1la, calculate the CM and DM gain and CMRR as a function of frequency. Sketch the magnitude of these quantities in decibels from f = 10 kHz to f = 20 MHz, using a log frequency scale. Compare your answer with a SPICE simulation. 7.7 A MOS differential amplifier is shown in Fig. 7.9. For this circuit, carry out the calculations in Problem 7.6. Use Iss = 1 mA, the values of RT = 300 kfl and CT = 2 pF as defined in Fig. 7.11 b, and the transistor data in Problem 7.2. 7.8 A lateral pnp emitter follower has Rs = = -300 FA, 250 R, rb = 200 R , p = 50, fT = 4 MHz, RE = 4 kR, C p = 0, and r , = m. Calculate the small-signal voltage gain as a function of frequency. Sketch the magnitude of the

Problems

voltage gain in decibels from f = 10 kHz to f = 20 MHz, using a log frequency scale. 7.9 Calculate the values of the elements in h e small-signal equivalent circuits for the input and output impedances of the emitter follower of problem f.8. Sketch the magnitudes of these impedances as a function of frequency from f = 10 kHz to f = 20 MHz, using log scales. Use SPICE to determine the small-signal step response of the circuit for a resistive load of 1 kO and then a capacitive load of 400 pF. Use a I-mV input pulse amplitude with zero rise time. Comment on the shape of the time-domain responses. (Bias the circuit with an ideal 300-pA current source connected to the emitter for the capacitive load test.) 7.10 For the source follower in Fig. 7.13b, find the low-frequency gain and plot the magnitude and phase of its voltage gain versus frequency from f = 10 kHz to f = 20 GHz, using log scales. Compare your plot with a SPICE simulation. Use the transistor data given in Problem 7.2 with a resistive load of 1 kfl and then a capacitive load of 400 pF. In both cases, take ID = 0.5 mA. Use a I-mV input pulse amplitude with zero rise time. Comment on the shape of the time-domain responses. (Bias the circuit with an ideal 0.5 mA current source connected to the source for the capacitive load test.) 7.1 1 (a) Find expressions for R I , Rz, and L in the output impedance model for a MOS source follower assuming RS >> llg,, y # 0, and v,b = v,. (b) Plot the magnitude of the output impedance versus frequency from f = 10 kHz to f = 10 GHz, using log scales, when Rs = 1 MO, g, = 0.3 M ,and y = 0. 7.12 A common-base stage has the following parameters: Ic = 0.5 rnA, C, = 10 pF, C, = 0.3 pF, rb = 200 fl, p = 100, ro = m, RL = 0, and Rs = m. (a) Calculate an expression for the smallsignal current gain of the stage as a function of frequency and thus determine the frequency where the current gain is 3 dB below its low-frequency value. (b) Calculate the values of the elements in the small-signal equivalent circuits for the input and output impedances of the stage and sketch the magnitude~of these impedances from f = 100 kHz to f = 100 MHz using log scales. 7.13 Repeat Problem 7.12 for a NMOS common-gate stage using RL = 0 and Rs = W . Use ID = 0.5 mA and the MOS transistor data in Problem 7.2. Plot the impedance magnitudes from f = 100kHzto f = 100GHz.

545

7.14 The ac schematic of a common-emitter stage is shown in Fig. 7 . 2 ~ Calculate . the lowfrequency small-signal voltage gain volvi and use the zero-value time-constant method to estimate the -3-dBfrequenc~for& = 10kO =5

Data: p = 200, f~ = 600 MHz (at Ic = 1 mA), C, = 0.2 pF, C j e = 2 pF, CCS= 1 pF, r b = 0, r, = W, and Ic = 1 mA. 7.15 Repeat Problem 7.14 if an emitter degeneration resistor of value 300 O is included in the circuit. 7.16 Repeat Problem 7.14 if a resistor of value 30 kfl is connected between collector and base of the transistor. 7.17 Repeat the calculations in Problem 7.14 for the cornmon-source stage in Fig. 7.2b. Take VDB= 7.5 V and ID = 0.5 mA. Use the same transistor data and resistor values as in Problem 7.2 with the following exceptions: 1. C,, and Cgd are not given, but fT = 3 GHz. 2. Cdb is not equal to 0. Calculate the zerobias drain-bulk capacitance as Cdbo = AD(Cjo)+ P D ( C ~ ~ ~where O ) , AD = (5 pm)W, and use PD = W. Let Cjo = 0.4 fF/(pm2) and CjJWo= 0.4 W p m . Then use (1.202) with t,90 = 0.6 V to calculate C d b . 7.18 Repeat Problem 7.14 using a NMOS transistor in place of the bipolar transistor. Use ID = 0.5 rnA and the transistor data in Problem 7.2. 7.19 Repeat Problem 7.18 if a 900 Ck sourcedegeneration resistor is included in the circuit. 7.20 Repeat Problem 7.18 if a resistor of value 50 kfl is connected between drain and gate of the transistor. 7.21 A Darlington stage and a cornmoncollector-comrnon-emitter cascade are shown schematically in Fig. 7.41, where Rs = 100 kO and RL = 3 kfl. (a) Calculate the low-frequency small-signal voltage gain v,lvi for each circuit. (b) Use the zero-value time-constant method to calculate the -3-dB frequency of the gain of each circuit. Data: /3 = 100, f~ = 500 MHz at Ic = 1 mA, C, = 0.4pF, C j e = 2 p F , C,, = 1 pF, rb = 0, r, = W, Icl = 10 pA, and IC2 = 1 mA. (Values of C,, C,,, and C j , are at the bias point.) 7.22 Repeat Problem 7.21 if a bleed resistor of 15 kO is added from the emitter of Ql to ground, which increases the collector bias current in Qlto 50 FA.

546

Chapter 7 W Frequency Response of Integrated Circuits

7.23 Repeat Problem 7.21 if the input signal is a current source of value i, applied at the base of Q l . (That is, ii replaces the voltage source vi and resistance Rs.) The transfer function is then a transresistance v,lii. 7.24 Replace the bipolar transistors in Fig. 7.41 with NMOS transistors. Repeat the calculations in Problem 7.21, using Rs = 100 k f i , RL = 3 kfl, and the NMOS transistor model data in Problem 7.2, but use Cdb= 200 fF and C,b = 180 fF here. Take ID, = 50 pA and ID2 = 1 mA.

Figure 7.42 Amplifier stage.

(a)Darlington stage and (6) common-collector-common-emitter stage.

7.26 Repeat Problem 7.25 with the following changes: l . Replace Ql with a p-channel MOS transistor, M 1 . Replace Q2 and Q3 with n-channel MOS transistors, M2 and M3. 2. Add a resistor of value llg,, from the gate to the source of M 1 . 3. Take VSUPPLY = 2.5 V. 4. Use the formula for C(ibO given in Problem 7.17. 5. For all transistors: Ldrwn= 2 pm, Ld = 0.2 pm, Xd = 1 pm, and y = 0. W1 = 200 pm and W 2 = W3 = 100 pm. Use (1.201) and (1.202) with $0 = 0.6 V for the junction capacitances. Use the equations in Problem 7.17 for CdhO.

7.25 An amplifier stage is shown in Fig. 7.42 where bias current IBis adjusted so that V0 =

N M O S data: V,, = 1 V, kl, = 60 p,AN2, A, = 1/(100 V), C,, = 0.7 f ~ / ( ~ r n * Cjo ), = 0.4 fF/(pm2), and CjSwo= 0.4 fF/em.

Figure 7.41 The ac schematics of

0 V dc. Take VsUppLy= 10 V. (a) Calculate the low-frequency, small-signal transresistance v,lii and use the zero-value timeconstant method to estimate the -3-dB frequency.

PMOS data: V,, = - 1 V, k; = 20 [&I = ll(50 V), C,, = 0.7 fF/(pm2), Cjo = 0.2 fF/(pm2), and CjSwo= 0.2 fF/pm. 7.27 A differential circuit employing active Data: npn: p = 100, fT = 500 MHz at Ic = loads is shown in Fig. 7.43. Bias voltage VB is ad1 mA, C,o = 0.7 pF, Cj, = 3 pF (at the bias justed so that the collectors of Q, and Q2 are at point), C,o = 2 pF, = 0, and VA = 120 V. AS+5 V dc. Biasing resistors are RB1= 10 kfl and sume n = 0.5 and $0 = 0.55 V for all junctions. RB2 = 20 k!2. Calculate the low-frequency, smallpnp: P = 50, fT = 4 MHz at Zc = -0.5 mA, signal voltage gain v,/vi, and use the zero-value CPo = 1.0 pF, Cj, = 3 pF (at the bias point), time-constant method in the DM half-circuit to esChsO= 2 pF, rb = 0, and (VA(= 50 V. Assume timate the -3-dB frequency of the DM gain. Use the device data in Problem 7.25. n = 0.5 and $o = 0.55 V for all junctions. (b) Repeat (a) if a 20-pF capacitor is connected from collector to base of Q , .

Problems

547

Figure 7.43 Differential circuit with active loads.

7.28 Repeat Problem 7.27, replacing the bipolar transistors with MOS transistors. Assume that the values of Rsl and RB2 set ID5 = 1 mA. Use W1 = W2 = W 5 = W6 = 100km, W3 = W4 = 50 pm, and LdWn= 2 pm. See Problem 7.26 for all other MOS transistor data. 7.29 The ac schematics of a common-source stage and a common-source-common-gate (cascode) stage are shown in Fig. 7.44 with Rs = 10 kfl and RL = 20 kfl. Using the transistor and operating-point data in Problem 7.2: (a) Calculate the low-frequency, small-signal voltage gain v,,/vi for each circuit.

(4 Figure 7.44 An ac schematic of

(b) Use the zero-value time-constant method to calculate and compare the -3-dB frequencies of the gain of the two circuits. (C) Estimate the 10 to 90 percent rise time for each circuit for a small step input and sketch the output voltage waveform over 0 to 300 ns for a l-mV step input. 7.30 Replace the NMOS transistors in Fig. 7.44 with npn transistors. The resulting ac schematics are of a common-emitter stage and a commonemitter-common-base (cascode) stage. Repeat the calculations in Problem 7.29 using Rs = 5 k a , RL = 3 kR, and the following data.

(b)

(a)common-source stage and (b) cascode stage.

548

Chapter 7 W Frequency Response of Integrated Circuits

-6 V Figure 7.45 Arilplifier stage.

Data: IC = 1 mA, p = 100, rb = 0, C,, = 1 pF, C, = 0.4 pF, f~ = 500 MHz (at Ic = 1 mA), and r, = m. 7.31 An amplifier stage is shown in Fig. 7.45. (a) Calculate the low-frequency, small-signal voltage gain v,lvi. (b) Apply the zero-value time-constant method to the DM half-circuit to calculate the -3-dB frequency of the gain. Data: CCso= 2 pF, CPo = 0.5 pF, C j , = 4 pF (at the bias point), fT = 500 MHz (at Ic = 2 mA), /3 = 200, r,, = 0, and r, = m. Assume n = 0.5 and $0 = 0.55 V for all junctions. (C) Use SPICE to find the small-signal gain and bandwidth of the amplifier and also the magnitude and phase of the transfer function at 100 MHz. (d) Investigate the influence of base resistance by repeating (c) with rb = 200 fl and comparing the results. 7.32 Repeat Problem 7.3 1 with n-channel MOS transistors replacing all bipolar transistors. Assume W = 100 pm, Ldrwn = 2 pm, L d = 0.2 pm, Xd = 0, A = 0, k; = 60 p,A/V2, y = 0, V , = 1 V, C,, = 0.7 fFlFm2, C,! = 0.15 W p m , Cjo = 0.4 f17pm2, and Cj,,$,o= 0.4 fF1p.m. Use (1.201) = 0.6 V for the junctions. and (1.202) with Use the information in Problem 7.17 to calculate Cdbo= CshO.Skip part (d) in Problem 7.3 1. 7.33 The ac schematic of a wideband MOS current amplifier is shown in Fig. 7.46. The WIL of M2 is four times that of M , and corresponding bias currents are ID^ = 1 rnA and 1 0 2 = 4 mA. Calculate the low-frequency, small-signal current gain i,l& and use the zero-value time-constant method to estimate the -3-dB frequency. Calculate the 10 to

90 percent rise time for a small step input. Data at the operating point: M1: Cgd = 0.05 pF, Cgs = 0.2 pF, Csb = Cdb = 0.09pF, V,,, = 0.3V, andr, = cc. M2: Cgd = 0.2 pF, Cgs= 0.8 pF, C,yb = Cdb = 0.36pF, V,,, = 0.3 V, andr, = a. 10

4--

Figure 7.46 An ac schematic of a MOS current

amplifier. 7.34 Replace the MOS transistors in the amplifier in Fig. 7.46 with bipolar npn transistors. The emitter area of Q2 is four times that of Ql and corresponding bias currents are Icl = 1 mA and IC2= 4 mA. Repeat the calculations in Problem 7.33 using the following data.

Data at the operating point: Q , : /3 = 200, 7 , ~ = 0.2 ns, C , = 0.2pF, C j , = 1 pF, C,, = 1 pF,rb = 0, andr, = m. Q 2 :p = 2 0 0 , q = 0.2ns, C, = 0.8pF,C,, = 4pF,Cc, = 4pF,rh = O,andr, = m. 7.35 A two-stage amplifier is shown in Fig. 7.47. Calculate the low-frequency, small-signal gain and use the zero-value time-constant method to estimate the -3-dB frequency. Calculate the 10 to 90 percent rise time for a small step input. Use SPICE to determine the -3-dB frequency and also

Problems

l0 ka

10 kL2

5 kQ

5WZ C

l b

549

0

+

v0

--

-6v Figure 7.47 Two-stage amplifier.

the frequency where the phase shift in the transfer function is - 135" beyond the low-frequency value. Data: p = 200, fT = 600 MHz at Ic = 1 mA, C, = 0.2 pF, C j e = 2 pF, C,, = 1 pF, rb = 0, VB,qon)= 0.6 V, and r, = m. (Values of C,, C,,, and Cje are at the bias point.)

7.36 A two-stage bipolar amplifier is shown in Fig. 7.48. Calculate the low-frequency, smallsignal voltage gain v,/vi and use the zero-value time-constant method to estimate the -3-dB frequency. Use a DM half-circuit for the differential pair. Use SPICE to estimate the first and second most dominant poles of the circuit.

Figure 7.48 Two-stage amplifier with pnp second stage.

550 Chapter 7


Figure 7.49 Wideband MOS amplifier stage.

Data: npn: j3 = 200, fT = 400 MHz (at Ic = 1 mA), C, = 0.3 pF, C,, = 3 pF, C,, = 1.5 pF, rb = 0, VB,yonj= 0.6 V, and r , = m. pnp: P = 100, fT = 6 MHz (at Zc = -0.5 mA), C, = 0 . 3 p F , C j , = 3pF,Cb, = 1.5pF,rb = 0, VBE(on) = -0.6 V, and r, = m. (All values of C,, C,,, Cbs,and Cj, are at the bias point.) 7.37(a) A wideband MOS amplifier stage is shown in Fig. 7.49. Calculate the small-signal, low-frequency gain and use the zero-value timeconstant method to estimate the -3-dB bandwidth. Use p,C,, = 60 PAN', to, = 20 nm, C,[ = 0.3 f F / ( ~ mof gate width), $, = 0.6 V, V , = 0.7 V, y = 0.4 VIf2, A = 0, and V. = 2.5 V dc. For Cdb and Csb,use CdbO= CsbO=

0.8 @/(pm of gate width). Assume that the substrate is grounded. Compare your calculation with a SPICE simulation, and also use SPICE to estimate the second most dominant pole. Use SPICE to plot the small-signal bandwidth as the dc input voltage is varied from 0 to 5 V. (b) Calculate the small-signal gain and -3-dB bandwidth including short-channel effects with %, = 1.5 X 106 Vlm. Assume the same bias currents as in (a) and model MOSFET shortchannel effects with a resistor in series with the source. Connect the device capacitances to the lower end of the added source resistor. 7.38 A CMOS amplifier stage is shown in Fig. 7.50. Select WIL for M 1 and Ms to give

Figure 7.50 CMOS amplifier stage.

Problems

V , = V. = 2.5 V dc and ]IDI = 100 p A bias in all devices. The minimum value of L and W is 2 pm. Calculate the small-signal, low-frequency gain and the -3-dB frequency of the stage. Verify with SPICE. Use device data from Problem 7.37(a) with IAl = 0.03 V-', p&,, = 30 p,AN2, and V t p = -0.7 V. 7.39 For the BiCMOS circuit of Fig. 3.78, use the zero-value time-constant method to estimate the first and second most dominant poles of the circuit. Assume an input voltage drive. Use bipolar transistor data from Fig. 2.32 and MOSFET parameters Cgd = 90 fF, Csh = Cdb = 200 fF, and C,, = 200 fF at the bias point. Further assume p,C,, = 40 p m 2 , Vt = 0.8 V, h = 0, and y = 0. Use SPICE to check your result. 7.40 Use the zero-value time-constant method to estimate the small-signal dominant pole for the current gain of the MOS cascode current mirror of Fig. 4.9. Assume an input ac current source in parallel with IIN and a zero load impedance with VOut = VGS3+ VGS4. The bias current IIN= 100 pA. Compare your answer with the fT value of the devices. Device parameters are p,C,, = 60 FAN2, y = 0, A = 0, V, = 0.7 V, W = 10 pm, L,ff = 1 pm, C,, = 20 fF,Cgd = 3 fF, Csb = Cdb = 10 fFat the bias point. Compare your answer with a SPICE simulation of the bandwidth of the circuit and use SPICE to find the bandwidth for IIN= 50 p A and IIN = 200 pA. 7.41 Repeat Problem 7.40 including shortchannel effects with %, = 1.5 X 106 Vlm. 7.42 Use the short-circuit time-constant method to estimate the nondominant pole that originates at the drain nodes of M 1 and M2 in the CMOS folded cascode of Fig. 6.28. Assume the gates of M**,M ~ AM5, , M I 1 ,and M l t are biased from low-impedance points and that a voltage drive is applied at v,. All device sizes and pararneters are as given in Problem 7.40 except for M l l and MI2, which have twice the width of the other transistors. All bias currents are 100 p,A except for M s , M11, and M12, which have )ID) = 200 pA. Assume VGD of M l l and M 1 2 is zero volts. Use CL = 1 pF and p&,, = 30 F A N 2 . How much phase shift is contributed to the amplifier transfer function by this nondominant pole at the amplifier unity-gain frequency? Check your calculations with SPICE simulations. 7.43 A MOS cascode stage is shown in Fig. 7.44b. Replace the load resistor with a load capacitor CL = 2 pF. Assume the total capacitance that connects to the drain of M, can be modeled by a

551

capacitor C , = 0.2 pF from that drain to ac ground. Ignore all other capacitors. Therefore, the gain for this circuit has only two poles. For both transistors, take ID = 100 pA, W = 20 km, Leff = 0.5 pm, k' = 180 p m 2 , and h = 0.04 V-'. (a) Use zero-value time constants to estimate the dominant pole. (b) Use short-circuit time constants to estimate the nondominant pole. (c) Compare your answers with a SPICE simulation. 7.44(a) For the common-emitter amplifier in Problem 7.1, use zero-value time constants to estimate the dominant pole and short-circuit time constants to estimate the nondominant pole. (b) Compare your estimates with a SPICE simulation. 7.45(a) Use zero-value time constants to estimate the dominant pole and short-circuit time constants to estimate the nondominant pole for the common-source amplifier in Problem 7.2. (b) Compare your answers with a SPICE simulation. 7.46(a) An integrator is shown in Fig. 7.51. Use zero-value time constants to estimate the dominant pole and short-circuit time constants to estimate the nondominant pole for this circuit. Use R = 2 0 k n , C = 50pF,Ci, = 0.2pF,aV= 1000, and R, = 5 kfl. (b) Compare your answers with a SPICE simulation. 7.47 Add a 0.5 pF load capacitor from the output to ground to the integrator in Fig. 7.51. When this capacitor is added, the circuit has a loop of three capacitors. Direct application of the shortcircuit time-constant method here gives zero for each short-circuit time-constant. (Verify this.) The problem here is that three short-circuit time constants are being calculated for the three capacitors, and the sum of the reciprocal of these time constants equals the sum of three poles, as shown in (7.146). However, this circuit has only two poles because only two of the capacitor voltages are independent. An alternative approach to estimating the nondominant pole is to calculate the zero-value time constants and determine if one zero-value time constant is much larger than the others. If so, the capacitor associated with the largest zero-vdue time constant is shorted, and one time constant for the remaining capacitors, which are in parallel, is the short-circuit time constant. Cany out these steps,

552 Chapter 7 W Frequency Response of Integrated Circuits

Figure 7.5 1 An integrator stage.

and compare the estimated nondominant pole with a SPICE simulation. 7.48 Find an expression for G,(s) = io(s)lvid(s)for the circuit in Fig. 7.33 and verify the equations for the pole and zero given in Section 7.3.5.

7.49 Calculate the pole and zero associated with the current-mirror load in Fig. 7.33 if ID, = - 100 FA, l vov3 / = 0.2 V, and C, = 0.1 pF

REFERENCES 1. P. E. Gray and C. L. Searle. Electronic Principles: Physics, Models, and Circuits. Wiley, New York, 1969. 2. A. S. Sedra and K. C. Smith. Microelectronic Circuits. Oxford University Press, New York, 1998.

3. K. Ogata. Modern Control Engineering. Second Edition, Prentice-Hall, Englewood Cliffs, N.J., 1990. 4. R. D. Thorton, et al. Multistage Transistor Circuits. Wiley, New York, 1965.

Feedback

Negative feedback is widely used in amplifier design because it produces several important benefits. One of the most significant is that negative feedback stabilizes the gain of the amplifier against parameter changes in the active devices due to supply voltage variation, temperature changes, or device aging. A second benefit is that negative feedback allows the designer to modify the input and output impedances of the circuit in any desired fashion. Another significant benefit of negative feedback is the reduction in signal waveform distortion that it produces, and for this reason almost all high-quality audio amplifiers employ negative feedback around the power output stage. Finally, negative feedback can produce an increase in the bandwidth of circuits and is widely used in broadband amplifiers. However, the benefits of negative feedback listed above are accompanied by two disadvantages. First, the gain of the circuit is reduced in almost direct proportion to the other benefits achieved. Thus, it is often necessary to make up the decrease in gain by adding extra amplifier stages with a consequent increase in hardware cost. The second potential problem associated with the use of feedback is the tendency for oscillation to occur in the circuit, and careful attention by the designer is often required to overcome this problem. In this chapter, the various benefits of negative feedback are considered, together with a systematic classification of feedback configurations. Two different methods for analyzing feedback circuits are presented. The problem of feedback-induced oscillation and its solution are considered in Chapter 9.

8.1 Ideal Feedback Equation Consider the idealized feedback configuration of Fig. 8.1. In this figure Si and S, are input and output signals that may be voltages or currents. The feedback network (which is usually linear and passive) has a transfer function f and feeds back a signal S f b to the input. At the input, signal S f b is subtracted from input signal Siat the input differencing node. Error signal S, is the difference between Si and S f b , and S, is fed to the basic amplifier with transfer function a. Note that another common convention is to assume that Si and S f b are added together in an input summing node, and this leads to some sign changes in the analysis. It should be pointed out that negative-feedback amplifiers in practice have an input differencing node and thus the convention assumed here is more convenient for amplifier analysis. From Fig. 8.1

554

Chapter 8

Feedback

Basic amplifier

Figure 8.1 Ideal feedback configuration.

Feedback network

assuming that the feedback network does not load the basic amplifier. Also


Substituting (8.4) in (8.1) gives S, = a s i

-

af S ,

and thus

Equation 8.5 is the fundamental equation for negative feedback circuits where A is the overall gain with feedback applied. ( A is often called the closed-loop gain.) It is useful to define a quantity T called the loop gain such that and

T is the total gain around the feedback loop. If T >> l , then, from (8.5), gain A is given by

That is, for large values of loop gain T, the overall amplifier gain is determined by the feedback transfer function f . Since the feedback network is usually formed from stable, passive elements, the value of f is well defined and so is the overall amplifier gain. The feedback loop operates by forcing S f b to be nearly equal to Si. This is achieved by amplifying the difference S, = Si - S f b ,and the feedback loop then effectively minimizes error signal S,. This can be seen by substituting (8.5) in (8.4) to obtain

and this leads to

8.3 Effect of Negative Feedback on Distortion

555

As T becomes much greater than 1, S, becomes much less than Si.In addition, substituting (8.5) in (8.2) gives

and thus

If T >> 1, then S f b is approximately equal to Si.That is, feedback signal S is a replica of the input signal. Since S f b and S, are directly related by (8.2), it follows that if I f l < 1, then S , is an amplified replica of Si.This is the aim of a feedback amplifier.

8.2 Gain Sensitivity In most practical situations, gain a of the basic amplifier is not well defined. It is dependent on temperature, active-device operating conditions, and transistor parameters. As mentioned previously, the negative-feedback loop reduces variations in overall amplifier gain due to variations in a. This effect may be examined by differentiating (8.5) to obtain

and this reduces to

If a changes by 6a, then A changes by S A where

The fractional change in A is

This can be expressed as

Equation 8.12 shows that the fractional change in A is reduced by (1 + T) compared to the fractional change in a. For example, if T = 100 and a changes by 10 percent due to temperature change, then the overall gain A changes by only 0.1 percent using (8.12).

8.3 Effect of Negative Feedback on Distortion The foregoing results show that even if the basic-amplifier gain a changes, the negative feedback keeps overall gain A approximately constant. This suggests that feedback should be effective in reducing distortion because distortion is caused by changes in the slope of

556

Chapter 8

Feedback

Figure 8.2 Basic-amplifier transfer characteristic.

the basic-amplifier transfer characteristic. The feedback should tend to reduce the effect of these slope changes since A is relatively independent of a. This is explained next. Suppose the basic amplifier has a transfer characteristic with a nonlinearity as shown in Fig. 8.2. It is assumed that two regions exist, each with constant but different slopes a1 and a2. When feedback is applied, the overall gain will still be given by (8.5) but the appropriate value of a must be used, depending on which region of Fig. 8.2 is being traversed. Thus the overall transfer characteristic with feedback applied will also have two regions of different slope, as shown in Fig. 8.3. However, slopes A l and A2 are almost equal because of the effect of the negative feedback. This can be seen by substituting in (8.5) to give

Thus the transfer characteristic of the feedback amplifier of Fig. 8.3 shows much less nonlinearity than the original basic-amplifier characteristics of Fig. 8.2. Note that the horizontal scale in Fig. 8.3 has been compressed as compared to Fig. 8.2 in order to allow easy comparison of the two graphs. This scale change is necessary because

Figure 8.3 Feedback-amplifier transfer characteristic corresponding to the basic-amplifier characteristic of Fig. 8.2.

8.4 Feedback Configurations

557

the negative feedback reduces the gain. The reduction in gain by the factor (1 + T), which accompanies the use of negative feedback, presents few serious problems, since the gain can easily be made up by placing a preamplifier in front of the feedback amplifier. Since the preamplifier handles much smaller signals than does the output amplifier, distortion is usually not a problem in that amplifier. One further point that should be made about Figs. 8.2 and 8.3 is that both show hard saturation of the output amplifier (i.e., the output becomes independent of the input) at an output signal level of Soz. Since the incremental slope a g = 0 in that region, negative feedback cannot improve the situation as A3 = 0 also, using (8.5).

8.4 Feedback Configurations The treatment in the previous sections was based.on the idealized configuration shown in Fig. 8.1. Practical feedback amplifiers are composed of circuits that have current or voltage signaIs as inputs and produce output currents or voltages. In order to pursue feedback amplifier design at a practical level, it is necessary to specify the details of the feedback sampling process and the circuits used to realize this operation. There are four basic feedback amplifier connections. These are specified according to whether the output signal S , is a current or a voltage and whether the feedback signal S f b is a current or a voltage. It is apparent that four combinations exist and these are now considered. 8.4.1 Series-Shunt Feedback

Suppose it is required to design a feedback amplifier that stabilizes a voltage transfer function. That is, a given input voltage should produce a well-defined proportionaI output voltage. This will require sampling the output voltage and feeding back a proportional voltage for comparison with the incoming voltage. This situation is shown schematically in Fig. 8.4. The basic amplifier has gain a, and the feedback network is a two-port with transfer function f that shunts the output of the basic amplifier to sample v,. Ideally, the impedance z22f = m, and the feedback network does not load the basic amplifier. The feedback voltage v f b is connected in series with the input to allow comparison with vi and, ideally, z l l f = 0. The signaI v, is the dzrerence between vi and vfb and is fed to the basic amplifier. The basic amplifier and feedback circuits are assumed unilateral in that the basic amplifier transmits only from v, to v, and the feedback network transmits only from v, to vfb. This point will be taken up later. This feedback is called series-shunt feedback because the feedback network is connected in series with the input and shunts the output. Basic amplifier

+

0

+

--

0

a

V€

--

--

Vi

+ "0

-

Feedback network

+ "fb

-

o z11,,=0-

f

-

Z22f

= 00

Figure 8.4 Series-shunt feedback configuration.

558

Chapter 8

Feedback

Figure 8.5 Series-shunt con-

figuration fed from a finite source impedance.

From Fig. 8.4 =

av,

Vfb =

fvo

v.

V e = Vj

-

Vfb

From (8.15), (8.16), and (8.17),

Thus the ideal feedback equation applies. Equation 8.18 indicates that the transfer function that is stabilized is v,/vi, as desired. If the circuit is fed from a high source impedance as shown in Fig. 8.5, the ratio v,lvj is still stabilized [and given by (8.18)],but now vi is given by

where Zi is the input impedance seen by vi. If z, = Zi, then vi depends on Zi, which is not usually well defined since it often depends on active-device parameters. Thus the overall gain v,/v, will not be stabilized. Consequently, the full benefits of gain stabilization are achieved for a series-shunt feedback amplifier when the source impedance is low compared to the input impedance of the closed-loop amplifier. The ideal driving source is a voltage source. Consider now the effect of series-shunt feedback on the terminal impedances of the amplifier. Assume the basic amplifier has input and output impedances zi and z, as shown in Fig. 8.6. Again assume the feedback network is ideal and feeds back a voltage f v, as shown. Both networks are unilateral. The applied voltage vj produces input current ii and output voltage v,. From Fig. 8.6 V, =

av,

V , = VG

'i

Basic amplifier

-

0

+ av,

"i

+ f v0

Z,

0

+ v0

-

-

Feedback network 0

0

C

Figure 8.6 Series-shunt configuration with finite impedances in the basic amplifier.

8.4 Feedback Configurations

559

Substituting (8.20) in (8.21) gives Vi = V ,

+ afv,

=

~ , ( 1+ a f )

Also


Thus, from (8.24), input impedance Ziwith feedback applied is

Series feedback at the input always raises the input impedance by (1 + T). The effect of series-shunt feedback on the output impedance can be calculated using the circuit of Fig. 8.7. The input voltage is removed (the input is shorted) and a voltage v applied at the output. From Fig. 8.7


From (8.28) output impedance Z0with feedback applied is

Shunt feedback at the output always lowers the output impedance by ( I + T). This makes the output a better voltage source so that series-shunt feedback produces a good voltage amplijier. It stabilizes v ~ I v ~raises , Z;, and lowers 2,. The original series-shunt feedback amplifier of Fig. 8.6 can now be represented as shown in Fig. 8 . 8 ~using (8.18), (8.25), and (8.29). As the forward gain a approaches infinity, the equivalent circuit approaches that of Fig. 8.8b, which is an ideal voltage amplifier.

Figure 8.7 Circuit for the calculation of the output impedance of the series-shunt feedback configuration.

560 Chapter 8

a

Feedback

Figure 8.8 (a) Equivalent circuit of a series-shunt feedback amplifier. ( b ) Equivalent circuit of a series-shunt feedback amplifier for a -. m.

8.4.2 Shunt-Shunt Feedback This configuration is shown in Fig. 8.9. The feedback network again shunts the output of the basic amplifier and samples v, and, ideally, z 2 2 f = 00 as before. However, the feedback network now shunts the input of the main amplifier as well and feeds back a proportional current f v,. Ideally, z l l f = so that the feedback network does not produce any shunt loading on the amplifier input. Since the feedback signal is a current, it is more convenient to deal with an error current i, at the input. The input signal in this case is ideally a current ii and this is assumed. From Fig. 8.9

where a is a transresistance,

where f is a transconductance, and

v. i,

= =

az, ii - i f b

Substitution of i f bfrom (8.31) in (8.33) gives

i,

=

ii - f v,

Basic amplifier

Figure 8.9 Shunt-shunt feedback configuration.

8.4 Feedback Configurations 561


Rearranging terms we find

Again the ideal feedback equation applies. Note that although a and f have dimensions of resistance and conductance, the loop gain T = af is dimensionless. This is always true. In this configuration, if the source impedance z, is finite, a division of input current ii occurs between z, and the amplifier input, and the ratio v0lii will not be as well defined as (8.35) suggests. The full benefits of negative feedback for a shunt-shunt feedback amplifier are thus obtained for z, >> Zi, which approaches a current-source drive. The input impedance of the circuit of Fig. 8.9 can be calculated using (8.32) and (8.35) to give

The input impedance Ziwith feedback is


Thus shunt feedback at the input reduces the amplifier input impedance by (1 + T). This is always true. It is easily shown that the output impedance in this case is

as before, for shunt feedback at the output. Shunt-shunt feedback has made this amplifier a good transresistance amplifier. The transfer function volii has been stabilized and both Ziand 2, are lowered. The original shunt-shunt feedback amplifier of Fig. 8.9 can now be represented as shown in Fig. 8 . 1 0 ~using (8.35), (8.38), and (8.39). As forward gain a approaches infinity, the equivalent circuit approaches that of Fig. 8.10b, which is an ideal transresistance amplifier. 8.4.3 Shunt-Series Feedback The shunt-series configuration is shown in Fig. 8.11. The feedback network samples i, and feeds back a proportional current i f b = f i,. Since the desired output signal is a current i,, it is more convenient to represent the output of the basic amplifier with a Norton equivalent. In this case both a and f are dimensionless current ratios, and the ideal input source is a

562 Chapter 8

Feedback

I

I

G4 Basic amplifier

Figure 8.10 (a) Equivalent circuit of a shunt-shunt feedback amplifier. (b) Equivalent circuit of a shunt-shunt feedback amplifier for a -. m.

-

I 10

l

-

lfb

-

Zllf'"

-

Feedback network

-

222,.

=0

a. .

-

Figure 8.1 1 Shunt-series feedback configuration.

current source ii. It can be shown that

This amplifier is a good current amplifier and has stable current gain i,/ii, low Zi, and high 2,.

8.4.4 Series-Series Feedback The series-series configuration is shown in Fig. 8.12. The feedback network samples i, and feeds back a proportional voltage v f b in series with the input. The forward gain a is a transconductance and f is a transresistance, and the ideal driving source is a voltage

8.5 Practical Configurations and the Effect of Loading

563

Basic amplifier

1 &L

I

Feedback networ

Figure 8.12 Series-series feedback configuration.

source vi. It can be shown that

This amplifier is a good transconductance amplifier and has a stabilized gain iolvi,as well as high Ziand 2,.

8.5 Practical Configurations and the Effect of Loading In practical feedback amplifiers, the feedback network causes loading at the input and output of the basic amplifier, and the division into basic amplifier and feedback network is not as obvious as the above treatment implies. In such cases, the circuit can always be analyzed by writing circuit equations for the whole amplifier and solving for the transfer function and terminal impedances. However, this procedure becomes very tedious and difficult in most practical cases, and the equations so complex that one loses sight of the important aspects of circuit performance. Thus it is profitable to identify a basic amplifier and feedback network in such cases and then to use the ideal feedback equations derived above. In general it will be necessary to include the loading effect of the feedback network on the basic amplifier, and methods of including this loading in the calculations are now considered. The method will be developed through the use of two-port representations of the circuits involved, although this method of representation is not necessary for practical calculations, as we will see.

8.5.1 Shunt-Shunt Feedback Consider the shunt-shunt feedback amplifier of Fig. 8.9. The effect of nonideal networks may be included as shown in Fig. 8.13a, where finite input and output admittances are assumed in both forward and feedback paths, as well as reverse transmission in each. Finite source and load admittances ys and y~ are assumed. The most convenient two-port

564 Chapter 8

Feedback Basic amplifier I

I

+ YS

v

"i

--

--

v

Feedback network

New basic amplifier

I

II

~ 1 1 f

~1 l a

YL

------------------,-.---------------J

New feedback network r-------------0

0

l+ l I vo I I I-

1 I

I I I I I

L -------------- J (b)

Figure 8.13 ( a ) Shunt-shunt feedback configuration using the y-parameter representation. (b) Circuit of ( a ) redrawn with generators y 2 ~vi and y12av, omitted.

representation in this case is the short-circuit admittance parameters or y parameters,' as used in Fig. 8 . 1 3 ~The . reason for this is that the basic amplifier and the feedback network are connected in parallel at input and output, and thus have identical voltages at their terminals. The y parameters specify the response of a network by expressing the terminal currents in terms of the terminal voltages, and this results in very simple calculations when two networks have identical terminal voltages. This will be evident in the circuit calculations to follow. The y-parameter representation is illustrated in Fig. 8.14. From Fig. 8.13a, at the input

Summation of currents at the output gives

565

8.5 Practical Configurations and the Effect of Loading

il = Yll v1

+

i, = Y21 v1

+ Y22 v2

Y21 = -

Y12 "2

I

vl i2 v 2 = 0

i =

I

V,

=0

Figure 8.14 The y-parameter

representation of a two-port.

Solving (8.46) and (8.47) by using (8.48) and (8.49) gives

The equation can be put in the form of the ideal feedback equation of (8.35) by dividing by Yiyo to give

Comparing (8.51) with (8.35) gives

At this point, a number of approximations can be made that greatly simplify the calculations. First, we assume that the signal transmitted by the basic amplifier is much greater than the signal fed forward by the feedback network. Since the former has gain (usually large) while the latter has loss, this is almost invariably a valid assumption. This means that

Second, we assume that the signal fed back by the feedback network is much greater than the signal fed back through the basic amplifier. Since most active devices have very small reverse transmission, the basic amplifier has a similar characteristic, and this assumption is almost invariably quite accurate. This assumption means that

> 1, we can describe this behavior by substituting (8.170) and (8.172) in (8.171) to give

which shows R, to be a function of V. if a, V R ,and rOaare fixed. If the output current drawn from the regulator changes by AIo, then V. changes by AVo, where

8.7 The Voltage Regulator as a Feedback Circuit

595


This equation allows calculation of the load regulation of the regulator. This is a widely used specification, which gives the percentage change in V. for a specified change in I. and should be as small as possible. Another common regulator specification is the line regulation, which is the percentage change in output voltage for a specified change in input voltage. Since V. is directly proportional to VR, the line regulation is determined by the change in reference voltage VR with changes in input voltage and depends on the particular reference circuit used. As an example of a practical regulator, consider the circuit diagram of the 723 monolithic voltage regulator shown in Fig. 8.37. The correspondence to Fig. 8.36 can be recognized, with the portion of Fig. 8.37 to the right of the dashed line being the voltage amplifier with feedback. The divider resistors R I and R2 in Fig. 8.36 are labeled RA and RB in Fig. 8.37 and are external to the chip. The output power transistor Q I 5is on the chip and is Darlington connected with QI4 for high gain. Differential pair Qll and Q I 2 ,together with active load Q8, contribute most of the gain of the amplifier. Resistor RC couples the reference voltage to the amplifier and C2 is an external capacitor, which is needed to prevent oscillation in the high-gain feedback loop. Its function is discussed in Chapter 9.

EXAMPLE Calculate the bias conditions and load regulation of the 723. Assume the total supply voltage is 15 V. The bias calculation begins at the left-hand side of Fig. 8.37. Current source I I models a transistor current source that uses a junction field-effect transistor (JFET)~that behaves like an n-channel MOS transistor with a negative threshold voltage. Diodes DI and D2 are Zener diode^.^ When operating in reverse breakdown, the voltage across a Zener diode is nearly constant as described in Chapter 2. The Zener diode D1 produces a voltage drop of about 6.2 V, which sets up a reference current in Q2:

Note that IC2 is almost independent of supply voltage because it is dependent only on the Zener diode voltage. The voltage across R I and Q2 establishes the currents in current sources Q3, Q7, and Q*.

Current source Q3 establishes the operating current in the voltage reference circuit composed of transistors Q4, Q5,(26, resistors R6, R,, R$, and Zener diode D2. This circuit can be recognized as a variation of the Wilson current source described in Chapter 4, and

8.7 The Voltage Regulator as a Feedback Circuit

the negative feedback loop forces the current in Q6 to equal ZC3

SO

597

that

where the base current of Q4 has been neglected. The output reference voltage V Ris composed of the sum of the Zener diode voltage D2 plus the base-emitter voltage of Q6, giving a reference voltage of about 6.8 V. The current in the Zener is established by VBE6and Rs giving

The Darlington pair Q4, Q5 helps give a large loop gain that results in a very low output impedance at the voltage reference node. Resistor R6 limits the current and protects Q5 in case of an accidental grounding of the voltage reference node. Resistor R7 and capacitor Cl form the high-frequency compensation required to prevent oscillation in the feedback loop. Note that the feedback is shunt at the output node. Any changes in reference-node voltage (due to loading for example) are detected at the base of Q6, amplified, and fed to the base of Q4 and thus back to the output where the original change is opposed. The biasing of the amplifier is achieved via current sources Q7 and Q8. The current in Q7 also appears in Qlo (neglecting the base current of Q9). Transistor Q13has an area twice that of Qlo and one half the emitter resistance. Thus

Transistor Q9 provides current gain to minimize the effect of base current in Qlo and QI3. This beta-helper current mirror was described in Chapter 4. The bias current in each half of the differential pair Q12is thus

ell,

Since Q8 and R5 are identical to Q7 and R4, the current in Q8 is given by

Transistor Q8 functions as an active load for Q12,and, since the collector currents in these two devices are nominally equal, the input offset voltage for the differential pair is nominally zero. The current in output power transistor Qls depends on the load resistance but can go as high as 150 rnA before a current-limit circuit (not shown) prevents further increase. Resistor R12provides bleed current so that QI4always has at least 0.04 mA of bias current, even when the current in QI5 is low andlor its current gain is large. In order to calculate the load regulation of the 723, (8.175) indicates that it is necessary to calculate the open-loop gain and output resistance of the regulator amplifier. For this purpose, a differential ac equivalent circuit of this amplifier is shown in Fig. 8.38. Load resistance RL12is the output resistance presented by Q8, which is

Assuming that the magnitude of the Early voltage of Q8 is 100 V and Ic8 = - 174 pA, we can calculate the value of RLI2as

598

Chapter 8

Feedback

Figure 8.38 An ac equivalent circuit of the regulator amplifier of the 723 voltage regulator.

Since gmll = gm12,the impedance in the emitter of Q12halves the transconductance and gives an effective output resistance of

where r o l ~is the output resistance of Q I 2 alone and is 575 ka if the Early voltage is 100 v. Thus ROlz = 1.15 M a (8.187) The external load resistance RL determines the load current and thus the bias currents in Q14 and Q15.However, RL is not included in the small-signal calculation of output resistance because this quantity is the resistance seen by RL looking back into the circuit. Thus, for purposes of calculating the ac output resistance, RL may be assumed infinite and the output Darlington pair then produces no loading at the collector of Q12.The voltage gain of the circuit may then be calculated as

-

I (1. 15114.42) X 106 26 2

--

The output resistance r,, of the circuit of Fig. 8.38 is the output resistance of a Darlington emitter follower. If R12is assumed large compared with r,ls then r,,

=

1 gm15

+

(

l

1

P0(15)

gm14

+

")

P0(14)

where

If we assume collector bias currents of 20 mA in Q I 5and 0.5 mA in Q14together with = = 100, then substitution in (8.189) gives rm

=

[l.?

+

(52 +

9133000)1 100

8.8 Feedback Circuit Analysis Using Return Ratio

599

Substituting for r,, and a in (8.175) and using V R = 6.8 V , we obtain, for the load regulation,

where AIo is in Amps. If AIo is 50 mA, then (8.192) gives = 2 X 10-'

=

0.02 percent

v0

W

This answer is close to the value of 0.03 percent given on the specification sheet. Note the extremely small percentage change in output voltage for a 50-rnA change in load current.

8.8 Feedback Circuit Analysis Using Return Ratio The feedback analysis presented so far has used two-ports to manipulate a feedback circuit into unilateral forward amplifier and feedback networks. Since real feedback circuits have bilateral feedback networks and possibly bilateral amplifiers, some work is required to find the amplifier a and feedback f networks. The correct input and output variables and the type of feedback must be identified, and the correct two-port representation (y, z, h, or g) must be used. After this work, the correspondence between the original circuit and modified two-ports is small, which can make these techniques difficult to use. Alternatively, a feedback circuit can be analyzed in a way that does not use twoports. This alternative analysis, which is often easier than two-port analysis, is called return-ratio analysis.5,6,7Here, the closed-loop properties of a feedback circuit are described in terms of the return ratio for a dependent source in the small-signal model of an active device. The return ratio for a dependent source in a feedback loop is found by the following procedure: 1. Set all independent sources to zero. 2. Disconnect the dependent source from the rest of the circuit, which introduces a break in the feedback loop. 3. On the side of the break that is not connected to the dependent source, connect an independent test source S, of the same sign and type as the dependent source. 4. Find the return signal S, generated by the dependent source.

Then the return ratio (a)for the dependent source is 3 = -s,/s,,'where the variable s represents either a current or a voltage. Figure 8 . 3 9 ~shows a negative feedback amplifier that includes a dependent voltage source. Figure 8.39b shows how the circuit is modified to find the return ratio. The dependent source is disconnected from the rest of the circuit by breaking the connections at the two X's marked in Fig. 8.39a. A test signal vt is connected on the side of the break that is not connected to the controlled source. The return signal v, is measured at the open circuit across the controlled source to find the return ratio CQ = -vr/vr.

600

Chapter 8

Feedback

(b)

Figure 8.39 (a)A feedback circuit that gives an inverting voltage gain. The "X" marks indicate where the loop will be broken. (b) The circuit in ( a )modified to find the return ratio for the dependent voltage source.

EXAMPLE

Find the return ratio for the circuit in Fig. 8.39b. The return ratio can be found with little computation because the resistors form a voltage divider

The return voltage v, is v,

=

-avv,


Figure 8.40~is a single-stage feedback circuit. Its small-signal model shown in Fig. 8.40b includes a dependent current source. Figure 8 . 4 0 ~illustrates how the return ratio is found in this case. Here, the dependent source is disconnected from the rest of the circuit, and a test current source it is connected on the side of the break that is not connected to the dependent source. A short circuit is applied across the dependent current source to provide a path for the return current i, to flow. The return ratio is computed as 3 = -i,./it.


601

Figure 8.40 (a)A transresistance feedback circuit. (b) The small-signal model for the circuit in (a). The "X" marks indicate where the loop will be broken. (c) The circuit in (6)modified to find the return ratio for the dependent current source.

8.8.1 Closed-Loop Gain Using Return Ratio A formula for the closed-loop gain of a feedback amplifier in terms of the return ratio will now be derived. Consider a feedback amplifier as shown in Fig. 8.41. The feedback amplifier consists of linear elements: passive components, controlled sources, and transistor small-signal models. A controlled source with value k that is part of the small-signal model of an active device is shown explicitly. The output of the controlled source is S,,, and the

602 Chapter 8

m

Feedback

Rest of feedback amplifier

Figure 8.41 Linear feedback amplifier used to derive the closed-loop gain formula.

controlling signal is S;,. The equation that describes the controlled source is

(For example, the output of the controlled source in Fig. 8.40b is S,, = g,vb,; the controlling signal is sic = vbe, and the value of the controlled source is k = g,.) Each signal s in the figure is labeled as if it is a voltage, but each signal could be either a current or a voltage. Because the feedback amplifier is linear, signals sic and soul can be expressed as linear functions of the outputs of the two sources, so, and Sin,

The terms B,, B2, and H in (8.198) and (8.199) are defined by

So B , is the transfer function from the input to the controlling signal evaluated with k = 0, BZ is the transfer function from the dependent source to the output evaluated with the input source set to zero, and H is the transfer function from the output of the dependent source to the controlling signal evaluated with the input source set to zero, times - 1. Also, the direct feedthrough d is given by

which is the transfer function from the input to the output evaluated with k = 0. The calculation of d usually involves signal transfer through passive components that provide a signal path directly from the input to output, a path that goes around rather than through the controlled source k. Equations (8.197), (8.198), and (8.199) can be solved for the closed-loop gain. Substituting (8.197) in (8.198) and rearranging gives Sic =

I

B1 +

kHSin


603

Substituting (8.197) in (8.199), then substituting (8.201) in the resulting equation and rearranging terms gives the closed-loop gain A

The term kH in the denominator is equal to the return ratio, as will be shown next. The return ratio is found by setting sin = 0, disconnecting the dependent source from the circuit, and connecting a test source S, where the dependent source was connected. After these changes, S,, = st and (8.198) becomes

Then the output of the dependent source is the return signal S,

=

ksiC =

-

kHs,. Therefore

So the closed-loop gain in (8.202) can be rewritten as

where

Here g is the gain from sin to sOutif H = 0 and d = 0, and d is the direct signal feedthrough, which is the value of A when the controlled source is set to zero ( k = 0). The closed-loop gain formula in (8.205a) requires calculations of four terms: B1, B2, d , and That equation can be manipulated into a more convenient form with only three terms. Combining terms in (8.205b) using a common denominator 1 + % gives

a.

Defining

allows (8.207) to be rewritten as

This is a useful expression for the closed-loop gain. Here, if % + m, then A = A, because l and dl(1 + 9)4 0. So A, is the closed-loop gain when the feedback %/(l + 3 ) circuit is ideal (that is, when 3 + W). A block-diagram representation of (8.209) is shown in Fig. 8.42. The gain around the feedback loop is %, and the effective forward gain in the loop is %A,. A key difference between the two-port and return-ratio analyses can be seen by comparing Figs. 8.1 and 8.42. +

604 Chapter 8

Feedback

Sout

Figure 8.42 A block diagram for the closed-loop gain formula in (8.209).

In the two-port analysis, all forward signal transfer through the amplifier and the feedback network is lumped into a. In the return-ratio analysis, there are two forward signal paths: one path ( d ) for the feedforward through the feedback network and another path (%A,) for the effective forward gain. Typically, A, is determined by a passive feedback network and is equal to l1f from two-port analysis. The value of A, can be found readily since A, = A when k m. Letting k + causes = kH -+ m. (Here we assumed k > 0. If k < 0 in a negative feedback circuit, then 3 + m when k -W.) When k -. m, the controlling signal S,, for the dependent source must be zero if the output of the dependent source is finite. The controlled source output will be finite if the feedback is negative. These facts can be used to find A, with little computation in many circuits, as is demonstrated in the next example.

-

-

EXAMPLE

Compute the closed-loop gain for the circuit of Fig. 8.40 using (8.209).Use the component values given in the figure. To use (8.209), A,, 3,and d are needed. Here, the only controlled source is the g, source, so k = g,. Also, sin = iin,sOut = v,, and sic = v b e . TO find A,, let g, + a, which forces the controlling voltage vb, to equal zero, assuming that the output current from the g, generator is finite. With vb, = 0, no current flows through r,, and therefore the input current iin flows through RF to produce v,. Thus Am

=

I

=

7

lin g,,

Next, d is found by setting k to output

= g,

-RF

=

-2Ok.n.

=m

= 0

and computing the transfer function from input

. Finally, the return ratio for the g, generator can be calculated using Fig. 8 . 4 0 ~Applying a current-divider formula gives the current i, through r, as


605


Then, using (8.209),

In (8.209), the second term that includes d can be neglected whenever Id( > 1 and are biased in the forward-active region. Find the output resistance. Blackman's impedance formula can be used here because there is a feedback loop formed by the current mirror Q1-Q3with Q2.With all transistors forward active and PF >> 1,


61 1

"cc

,l

(4

Figure 8.46 (a)The Wilson current mirror. (b) The circuit with each transistor replaced by its small-signal model. ( c ) The small-signal model modified for calculation of 3

for gm,.

Output port

Icl = IC2= Ic3= IREF. (The output is connected to other circuitry that is not shown, so Ic2is nonzero.) The smaI1-signal model is shown in Fig. 8.46b, where diode-connected Ql is modeled by a resistor of value l/gml. Resistor r,3, which is in parallel with l/gml, = PO/gml> > 1/gml).Also r03 is ignored, assuming that is ignored (since r,3 = POlgm3 it is much larger than the resistance looking into the base of Q2. Selecting k = gm3and calculating the first term in (8.238)gives

since setting g,3 = 0 forces the current through r,:! to be zero. Therefore, the voltage across r,2 is zero, which causes the current through the gm2source to be zero. The return ratios in Blackman's formula can be found using the circuit shown in . let us find %(output port open). When the output port is open, the current Fig. 8 . 4 6 ~First, in the g,2 generator can only flow through the parallel resistor r,z, so the currents through r,2 and l/gml are equal and are supplied by the test source it. Therefore,

612 Chapter 8

Feedback

Also l r = grn3V.x

Combining these two equations gives %(output open)

lr gm3 = -T = - = It gm1

1

where gml = gm3 because Zcl = IC3. When the output port is shorted, the current through the gm2 generator is not restricted to flow only through r,2. First, notice that with the output port shorted, r02 is in parallel with l/gml,so ro2 can be ignored. With this simplification, the current through the resistance l/gml is from the test and gm2 sources, so

Now Vy =

-0 7 r 2

Combining these two equations gives V, =

1 -(-it

lt

-

irgm2rT2)= --(l

gm1

where the relation PO =

gm2rp2

gm1

+ PO)

(8.253)

has been used. The return current is (8.254)

l r = gm3V.x

Therefore %(output shorted)

ir

gm3 -(l

It

gm1

= -T =

+ PO)= 1 + PO

Substituting in Blackman's formula gives

This approximate result agrees with (4.91), which was derived without the use of Blackman's formula.

8.8.3 Summary-Return-Ratio Analysis Return-ratio analysis is an alternative approach to feedback circuit analysis that does not use two-ports. The loop transmission is measured by the return ratio 3.The return ratio is a different measure of loop transmission than a f from two-port analysis. (The return ratio % is referred to as loop gain in some textbooks. That name is not associated with 9,here to avoid confusion with T = a f , which is called loop gain in this chapter.) For negative feedback circuits, % > 0.In an ideal feedback circuit, % + m and the closedloop gain is A,, which typically depends only on passive components. The actual gain of a feedback circuit is close to A, if % >> l. Blackman's impedance formula (8.238) gives the closed-loop impedance in terms of two return ratios. Return-ratio analysis is often simpler than two-port analysis of feedback circuits. For example, return-ratio analysis uses equations that are independent of the type of feedback, and simple manipulations of the circuit allow computation of the various terms in the equations. In contrast, two-port analysis uses different two-port representations for each of the

8.9 Modeling lnput and Output Ports in Feedback Circuits

613

four feedback configurations (series-series, series-shunt, shunt-series, and shunt-shunt). Therefore, the type of feedback must be correctly identified before undertaking two-port analysis. The resulting two-ports for the amplifier and feedback networks must be manipulated to find the open-loop forward gain a and the open-loop input and output impedances. With two-port analysis, the open-loop impedance is either multiplied or divided by (1 + T) to give the closed-loop impedance, depending upon the type of feedback. In contrast, Blackman's formula gives an equation for finding the closed-loop impedance, and this one equation applies to any port in any feedback circuit.

8.9 Modeling lnput and Output Ports in Feedback Circuits Throughout this chapter, the source and load impedances have been included when analyzing a feedback circuit. For instance, the inverting voltage-gain circuit in Fig. 8.47a, with source resistance Rs and load resistance RL, can be analyzed using the two-port or return-ratio methods described in this chapter. The resulting model is shown in Fig. 8.47b. The source and load resistances do not appear explicitly in the model, but the gain A, input resistance Ri, and output resistance R, are functions of the source and load resistances. Therefore, use of this model requires that both the source and load resistances are known. However, both the source and load are not always known or fixed in value. For example, a feedback amplifier might have to drive a range of load resistances. In that case, it would be desirable to have a simple model of the amplifier with the following properties: the elements in the model do not depend on the load, and the effect of a load on the gain can be easily calculated. If only one of the resistances Rs and RL is known, a useful model can be generated. First, consider Fig. 8 . 4 7 ~when the source resistance is unknown but the load is known. Then, the model in Fig. 8.47~can be used. Here, the key differences from the model in Fig. 8.47b are that R: and A' are used rather than Riand A, Rs is shown explicitly, and the controlling voltage for A' is the voltage vi across R: rather than the source voltage vs. (The single-prime mark here denotes that the quantity is computed with Rs unknown.) The input resistance R: and gain A' are computed with the load connected and with an ideal input driving network. Here, the Thkvenin driving network is ideal if the source resistance Rs is zero. (If the input is a Norton equivalent consisting of a current source and parallel source resistance, R,' and A' are found with Rs 4 a.)The resulting A' and R: are not functions of Rs. The source resistance Rs in Fig. 8 . 4 7 ~forms a voltage divider with RI; therefore, the overall voltage gain can be found by

Next, consider Fig. 8.47a when the load is unknown but the source resistance is known. Fig. 8.47d shows the appropriate model. Here, the key differences from the model in Fig. 8.47b are that R: and A" are used rather than R, and A, and RL is shown explicitly. (The double-prime mark denotes that the quantity is computed with RL unknown.) The output resistance R: and gain A" for this ThCvenin model are computed assuming an ideal load, which is an open circuit here (RL+ m). The load resistance RL in Fig. 8.47d forms a voltage divider with R:, so the loaded voltage gain is

'.'. = A" Vs

RL R';,+ RL

614

Chapter 8

Feedback

"0

"S

-

Figure 8.47 (a) An inverting-gain feedback amplifier. (b) A model for ( a )based on feedback analysis with known load and source resistances. ( c )Another model for (a)based on known load resistance and unknown source resistance. (d) A different model for (a) based on known source resistance and unknown load.

EXAMPLE

Model Fig. 8 . 4 7 ~with the circuit in Fig. 8.47d, assuming the load resistance is unknown. The model in Fig. 8.47d can be used when RL is unknown. Using return-ratio analysis, the calculations of R: and A" are as follows. With RL -+ m, the circuit in Fig. 8 . 4 7 ~is identical to Fig. 8.39a, and therefore the return ratio is given by (8.196):

Problems

615

The output resistance with RL 03, R:, can be found using Blackman's formula. First, the output resistance with the controlled source set to zero is +

The return ratio with the output port open is given in (8.259). The return ratio with the output port shorted is zero because shorting the output eliminates the feedback. Therefore, for the closed-loop output resistance, (8.238) gives

Calculation of A" requires that A: and d" be found with RL

-+

a.

and

Using the results for A:,

a",and d", we can compute

[Typically, the dl'l(l + a")term is small and can be ignored.] The voltage gain when a resistive load is connected can be found using (8.258). The only element of the model that was not computed is the input resistance Ri.It is a function of RL,SO it can only be computed once RL is known. The output-port model in Fig. 8.47d could be drawn as a Thkvenin or Norton equivalent. With the Thtvenin equivalent shown (a controlled voltage source in series with an m. When the output port is modoutput resistance), R: and A" are computed with RL eled by a Norton equivalent with a controlled current source and parallel output resistance, their values are found with RL = 0. -+

PROBLEMS Note: In these problems, loop transmission is used generically to refer to loop gain T = a f or return ratio 3. 8.1 (a) In a feedback amplifier, forward gain a

= 100,000 and feedback factor f

= 10d3.Calculate overall gain A and the percentage change in A if a changes by 10 percent. (b) Repeat (a) if f = 0.1. 8.2 For the characteristic of Fig. 8.2 the following data apply:

(a) Calculate and sketch the overall transfer characteristic of Fig 8.3 for the above amplifier when placed in a feedback loop with f = 1 0 - ~ . (b) Repeat (a) with f = 0.1. 8.3(a) For the conditions in Problem 8.2(b), sketch the output voltage waveform S, and the error voltage waveform S, if a sinusoidal input voltage Si with amplitude 1.5 V is appIied. (b) Repeat (a) with an input amplitude of 2 V. 8.4 Verify (8.40), (8.41), and (8.42) for a shunt-series feedback amplifier. 8.5 Verify (8.43), (8.44), and (8.45) for a series-series feedback amplifier.

616 Chapter 8

Feedback

Figure 8.48 An ac schematic of a shunt-shunt feedback amplifier. 8.6 For the shunt-shunt feedback amplifier of Fig. 8.15a, take RF = 100 k a and RL = 15 k a . For the op amp, assume that Ri = 500 kfl, R, = 200 0 , and a, = 75,000. Calculate input resistance, output resistance, loop transmission, and closed-loop gain: (a) Using the formulas from two-port analysis (Section 8.5). (b) Using the formulas from return-ratio analysis (Section 8.8). 8.7 The ac schematic of a shunt-shunt feedback amplifier is shown in Fig. 8.48. All transistors have ID = 1 mA, WIL = 100, k' = 60 pkJV2, and h = ll(50 V). (a) Calculate the overall gain v,/&, the loop transmission, the input impedance, and the output impedance at low frequencies. Use the formulas from two-port analysis (Section 8.5). (b) If the circuit is fed from a source resistance of 1 k 0 in parallel with ii, what is the new output resistance of the circuit? 8.8(a) Repeat Problem 8.7(a) with all NMOS transistors in Fig. 8.48 replaced by bipolar npn transistors. All collector currents are 1 mA and p = 200, VA = 50 V, and rb = 0. (b) If the circuit is fed from a source resistance of 1 k 0 in parallel with ii, what is the new output resistance of the circuit?

8.9 Repeat Problem 8.7 using the formulas from return-ratio analysis (Section 8.8). 8.10 Repeat Problem 8.8 using the formulas from return-ratio analysis (Section 8.8). .8.11 The half-circuit of a balanced monolithic series-series triple is shown in Fig. 8.18a. Calculate the input impedance, output impedance, loop gain, and overall gain of the half-circuit at low frequencies using the following data:

RE2 = 2 9 0 0 R, = 1 . 9 k a RL1 = 10.6kS1 RL2 = 6 k 0

RE,

=

For the transistors, I,-, = 0.5 mA, IC2 = 0.77 rnA, IC3 = 0.73 mA, P = 120, r b = 0, and VA = 40 V. 8.12 Repeat Problem 8.11 if the output signal is taken as the voltage at the emitter of Q 3 . 8.13 A feedback amplifier is shown in Fig. 8.49. Device data are as follows: P , = 200, P,,, = 100, IVBE(on)I= 0.7 V, r b = 0, and IVAI = M. If the dc input voltage is zero, calculate the overall gain v,lvi, the loop gain, and the input and output impedance at low frequencies. Compare your answers with a SPICE simulation. Also use SPICE to plot the complete large-signal transfer characteristic and find the second and third harmonic distortion in v, for a sinusoidal input voltage with peak-peak amplitude of 0.5 V at vi.

Figure 8.49 Feedback amplifier circuit.

Problems

617

Figure 8.50 Balanced series-shunt feedback amplifier.

8.14 Replace npn transistors Q1 -Q2 in Fig. 8.49 with NMOS transistors M 1 - M 2 , and replace the pnp transistor Q3 with PMOS transistor M3. Also, replace the 1.25 kcR resistor in the drain of M1 with a 4.35 kfl resistor. Repeat the calculations and simulations in Problem 8.13. For all transistors, use WIL = 100, y = 0, and lhl = 0. Also, V,, = -V,, = 1 V, k,', = 60 @ A N 2and , kh = 20 8.15 A balanced monolithic series-shunt feedback amplifier is shown in Fig. 8.50. (a) If the common-mode input voltage is zero, calculate the bias current in each device. Assume that PF is large. (b) Calculate the voltage gain, input impedance, output impedance, and loop gain of the circuit at low frequencies using the following data:

p

= 100

t-b

= 50

VA =

CO

VBE(on) = 0.7 V

(c) Compare your answers with a SPICE simulation (omit the loop gain) and also use SPICE to plot the complete large-signal transfer characteristic. If the resistors have a temperature coefficient of +l000 ppmIoC, use SPICE to determine the temperature coefficient of the circuit gain over the range -55'C to + 125'C. 8.16 How does the loop gain T = a f of the circuit of Fig. 8.50 change as the following circuit elements change? Discuss qualitatively.

(a) 50 S1 emitter resistor of the input stage (b) 500 -12 feedback resistor (C)

200 Cl load resistor on the output

8.17 The ac schematic of a shunt-series feed-

back amplifier is shown in Fig. 8.3 1. Element values are RF = 1 k-12, RE = 100 Ln, R L ~= 4 kcR, Rs = l/ys = 1 k 0 , and ZL = 0. Device data: P = 200, r b = 0, Zcl = 1 ~ = 2 1 mA, V A = 100 v. (a) Calculate the overall gain i,lii, the loop transmission, and the input and output impedances at low frequencies. (b) If the value of RLl changes by + l 0 percent, what is the approximate change in overall transmision and input impedance? 8.18(a) Repeat Problem 8.17(a) with RF = 5 k 0 , RE = 200 0,RL1 = 10 kfi, and y, = 0. (b) If the collector current of Ql increases by 20 percent, what will be the approximate change in overall gain and output resistance? 8.19 Calculate the transconductance, input impedance, output impedance, and loop transmission at low frequencies of the local seriesfeedback stage of Fig. 8.34 with parameters RE = 200 cR, ,l3 = 150, 1, = 1 mA,rb = 200 0, and V* = 80 V.

618 Chapter 8

Feedback

-6 V Figure 8.51 Circuit diagram of the 733 wideband monolithic amplifier.

8.20 A commercial wideband monolithic feedback amplifier (the 733) is shown in Fig. 8.51. This consists of a local series-feedback stage feeding a two-stage shunt-shunt feedback amplifier. The current output of the input stage acts as a current drive to the shunt-shunt output stage. (a) Assuming all device areas are equal, calculate the collector bias current in each device. (b) Calculate input impedance, output impedance, and overall gain v,lvi for this circuit at low frequencies with RL = 2 k n . Also calculate the loop gain of the output stage.

Data: p = 100, rb =0, r, = a. ( c ) Compare your answers with a SPICE simulation of the bias currents, input and output impedances, and the voltage gain. 8.21 If the 723 voltage regulator is used to realize an output voltage V , = 10 V with a l - k 0 load, calculate the output resistance and the loop gain of the regulator. If a 500-0 load is connected to the regulator in place of the l-kSZ load, calculate the new value of V,. Use SPICE to determine the line regulation and load regulation of the circuit. Use I I = 1 mA, p = 100, VA = 100 V, A, and rh = 0. Is =

8.22 Assume the BiCMOS amplifier of Fig. 3.78 is fed from a current source. Calculate the low-frequency small-signal transresistance v,lii, the loop gain, and the input and output impedances of the circuit. Use data as in Problem 3.17. Compare your answers with a SPICE simulation and also use SPICE to plot the complete large-signal transfer characteristic of the circuit. 8.23 A variable-gain CMOS amplifier is shown in Fig. 8.52. Note that M4 represents shunt feedback around M6. Assuming that the bias value of Vi is adjusted so that VGD6= 0 V dc, calculate bias currents in all devices and the small-signal voltage gain and output resistance for V , equal to 3 V and then 4 V. Compare your answer with a SPICE simulation and use SPICE to plot out the complete large-signal transfer characteristic of the circuit. Use p,C,, = 60 p ~ / ~ p2&,,, = 30 p ~ ~ 2 , V,, = 0.8V, V*, = -0.8V, A, = A, = 0,and y, = 0.5 V'I2. 8.24 A CMOS feedback amplifier is shown in Fig. 8.53. If the dc input voltage is zero, calculate the overall gain v,lvi and the output resistance. Compare your answer with a SPICE

Problems

619

* Figure 8.52 Variable-gain CMOS amplifier for Problem 8.23.

v,,=-5v Figure 8.53 CMOS feedback amplifier for Problem 8.24.

simulation. Use p,C,, = 60 X 10-6 AN', ppC,, = 30 X 10-6 A N 2 , Vt, = 0.8 V, V t p = -0.8 V, h , = (h,l = 0.03 V-', and y , = y, = O . 8.25 An active-cascode gain stage is shown in Fig. 8.54. Assume the amplifier Al has a voltage gain a = 1 X 103 and infinite input impedance. 2 ,= 0.3 V, For the transistors, k; = 140 p ~ / ~V,, y = 0, and h, = 0.03 V - ' . Assume all transistors are active. Calculate the output resistance using Blackman's impedance formula. Then calculate the voltage gain v,lvi. 8.26 Use Blackman's impedance formula to find the output resistance of the active-cascode current source in Fig. 8.55. Express the result in

terms of g,l, gm2, r , ~ ,ro2, and a , which is the voltage gain of the op amp. Assume all transistors are active with (WIL), = (WIL):= (WIL)3 and y = 0. (The drain of M2 connects to other circuitry that is not shown.) Also, assume that the op amp has infinite input impedance and zero output impedance. (a) Carry out the calculations with respect to controlled source g,,z. (b) Repeat the calculations with respect to the voltage-controlled voltage source a in the amplifier. (C) Compare the results of (a) and (b).

620

Chapter 8

Feedback

-4

-

Figure 8.54 An active-cascode

gain stage. 4

"DD

V~~~~

11

C-

+ss

8.27 Use return-ratio analysis and Blackman's impedance formula to find the closed-loop gain, return ratio, input resistance, and output resistance for the inverting gain amplifier in Fig. 8.56. For the op amp, assume that Ri = 1 MO, R, = 10 kO, and a, = 200.

Rout

Figure 8.55 An active-

cascode current source. 8.28 An ac schematic of a local shunt-shunt feedback circuit is shown in Fig. 8.57. Take RF = 100 kO and RL = 15 kO. For the MOS transistor, ID = 0.5 mA, WIL = 100, k' = 180 p,A/V2,and

Figure 8.56 An inverting feedback amplifier.

Problems

Figure 8.57 A local shunt-shunt feedback

amplifier. r, = m. Calculate input resistance, output resistance, loop transmission, and closed-loop gain: (a) Using the formulas from two-port analysis (Section 8.5). (b) Using the formulas from return-ratio analysis (Section 8.8). 8.29 Replace the MOS transistor in Fig. 8.57 by a npn transistor. Take RF = 2 kR, RL = 2 k R , p = 200, Ic = 1 mA, r!, = 0, and V A = 100 V. (a) Repeat Problem 8.28(a). (b) Repeat Problem 8.28(b). 8.30 A voltage-follower feedback circuit is shown in Fig. 8.58. For the MOS transistor, ID = 0.5 mA, k' = 180 p,.4IV2, r, = m, WIL = 100, /+r( = 0.3 V, and y = 0.3 VU2. For the op amp, assume that R, = 1 M R , R, = 10 k R , and a , = 1,000. Calculate input resistance, output resistance. loop transmission, and closed-loop gain:

621

(a) Using the formulas from two-port analysis (Section 8.5). (b) Using the formulas from return-ratio analysis (Section 8.8). 8.31 Replace the MOS transistor in Fig. 8.58 with a npn transistor. For the transistor, Zc = 0.5 mA and r, = m. (a) Repeat the calculations in Problem 8.30(a). (b) Repeat the calculations in Problem 8.30(b). 8.32 For the noninverting amplifier shown in Fig. 8.59, R I = 1 kS1, and R2 = 5 kCl. For the op amp, take R, = l M R , R, = 100 R , and a, = 1 X 104. Calculate input resistance, output resistance, loop transmission, and closed-loop gain: (a) Using the formulas from two-port analysis (Section 8.5). (b) Using the formulas from return-ratio analysis (Section 8 -8). 8.33 Calculation of return ratio begins by breaking a feedback loop at a controlled source. However, breaking a feedback loop at a controlled source is often impossible in a SPICE simulation because the controlled source (e.g., the g, source in a transistor's small-signal model) is embedded in a small-signal model. Therefore, it cannot be accessed or disconnected in simulation. A technique that can be used to simulate the return ratio with SPICE is illustrated in Fig. 8.60 for the circuit in Fig. 8.59. First, the independent source V i is set to zero. Next, ac

Figure 8.58 A voltage follower.

Figure 8.59 A noninverting feedback

amplifier.

622

Chapter8

--

L

Feedback

- id

41

r,n

V

--

Figure 8.60 The feedback circuit in

-

Fig. 8.59 modified to calculate ( a ) %: and (b) 3;.

m

(4

test signals v, and i, are injected into the loop at a convenient point (e.g., at the "X" in Fig. 8.59), creating two modified versions of the circuit as shown in Fig. 8.60a and 8.60b. Using Fig. 8.60a, calculate %l = -&lid. Using Fig. 8.60b, calculate !B.: = - V , , , / V ~ . The amplitudes of test signals i, and v, do not affect %: or Also, these ac test signals do not affect the dc operating point of the feedback circuit. The return ratio % for the controlled source is related to 3:and 3;by"

%L.

(a) Compute 92; and a:, for the circuit in Fig. 8.60. Use element values from Problem 8.32. Then combine these values using the equation above to find %.

&

(b) Compute % directly by breaking the loop at the a , controlled source. Compare the results in (a) and (b). (C) Carry out a SPICE simulation to find 9; and 3;. Then combine these values using the equation above to find %. Compare with your results from (a). 8.34(a) Calculate the loop gain T = af for the series-shunt feedback circuit in Fig. 8.59 using h-parameter two-ports. Take RI = 200 kR, and R2 = 100 k 0 . For the op amp, assume Ri = 50 k l l , R, = 1 M l l , and a , = 1 X 103. (b) If the input source location and type in Fig. 8.59 are changed as shown in Fig. 8.61, the feedback is now shunt-shunt. Calculate the loop

+ "0

m

-

-

I

Figure 8.61 The feedback circuit in Fig. 8.59 with a different inputsignal source.

References

623

gain T = a f for this shunt-shunt feedback circuit using y-parameter two-ports. Use the element values in (a). (C) Calculate the return ratio 3 for the circuit in Fig. 8.61, again using the element values in (a).

This return ratio is the same as the return ratio for the circuit in Fig. 8.59. Why? (d) Compare the results in (a), (b), and (c).

I . C. A. Desoer and E. S. Kuh, Basic Circuit Theory, McGraw-Hill, New-York, 1969. 2. J. E. Solomon and G. R. Wilson, "A Highly Desensitized, Wideband Monolithic Amplifier," IEEE J. Solid State Circuits, Vol. SC- 1 , pp. 19-28, September 1966. 3. A. B. Grebene, Analog Integrated Circuit Design, Van Nostrand Reinhold, New York, 1972, Chapter 6. 4. R. S. Muller and T. I. Kamins, Device Electranics for Integrated Circuits, Wiley, New York, 1977. 5. H. W. Bode, Network Analysis and Feedback Anlplijer Design, Van Nostrand, New York, 1945.

6. E. S. Kuh and R. A. Rohrer, Theory of Linear Active Networks, Holden-Day, San Francisco, 1967. 7. S. Rosenstark, Feedback Amplijer Principles, MacMillan, New York, 1986. 8.' B. Nikolic and S. Marjanovic, "A General Method of Feedback Amplifier Analysis," IEEE Int'l Symp. on Circuits and Systems, pp. 415418, Monterey, CA, 1998. 9. R. B. Blackman, "Effect of Feedback on Impedance,'' Bell Sys. Tech. J., Vol. 23, pp. 269-277, October 1943. 10. R. D. Middlebrook, "Measurement of Loop Gain in Feedback Systems," Int. J. Electronics, Vol. 38, no. 4, pp. 485-512, 1975.

Frequency Response and Stability of Feedback Amplifiers 9.1 Introduction In Chapter 8, we considered the effects of negative feedback on circuit parameters such as gain and terminal impedance. We saw that application of negative feedback resulted in a number of performance improvements, such as reduced sensitivity of gain to active-device parameter changes and reduction of distortion due to circuit nonlinearities. In this chapter, we see the effect of negative feedback on the frequency response of a circuit. The possibility of oscillation in feedback circuits is illustrated, and methods of overcoming these problems by compensation of the circuit are described. Finally, the effect of compensation on the large-signal high-frequency performance of feedback amplifiers is investigated. Much of the analysis in this chapter is based on the ideal block diagram in Fig. 9.1. This block diagram includes the forward gain a and feedback factor f, which are the parameters used in two-port analysis of feedback circuits in Chapter 8. The equations and results in this chapter could be expressed in terms of the parameters used in the return-ratio analysis in Chapter 8 by an appropriate change of variables, as shown in Appendix A9.1. The equations and relationships in this chapter are general and can be applied to any feedback circuit. However, for simplicity we will often assume the feedback factor f is a positive, unitless constant. One circuit that has such anf is the series-shunt feedback circuit shown in Fig 8.24. In this circuit, the feedback network is a resistive voltage divider, sof is a constant with 0 5 f 5 1. The forward gain a is a voltage gain that is positive at low frequencies. This circuit gives a noninverting closed-loop voltage gain.

9.2 Relation Between Gain and Bandwidth in Feedback Amplifiers Chapter 8 showed that the performance improvements produced by negative feedback were obtained at the expense of a reduction in gain by a factor (l + T), where T is the loop gain. The performance specifications that were improved were also changed by the factor ( l + T). In addition to the foregoing effects, negative feedback also tends to broadband the amplifier. Consider first a feedback circuit as shown in Fig. 9.1 with a simple basic amplifier whose gain function contains a single pole

625

9.2 Relation Between Gain and Bandwidth in Feedback Amplifiers

-

--

"6

"i

0

b

0 V"

Figure 9.1 Feedback circuit configuration.

where a0 is the low-frequency gain of the basic amplifier and p1 is the basic-amplifier pole in radians per second. Assume that the feedback path is purely resistive and thus the feedback function f is a positive constant. Since Fig. 9.1 is an ideal feedback arrangement, the overall gain is

where the loop gain is T(s) = a(s)f .Substitution of (9.1) in (9.2) gives

From (9.3) the low-frequency gain A. is

where To

=

a. f

=

low-frequency loop gain

The - 3-dB bandwidth of the feedback circuit (i.e., the new pole magnitude) is (1 +a, f Ipl I from (9.3). Thus the feedback has reduced the low-frequency gain by a factor (1 + To), which is consistent with the results of Chapter 8, but it is now apparent that the -3-dB frequency of the circuit has been increased by the same quantity (1 + To). Note that the gain-bandwidth product is constant. These results are illustrated in the Bode plots of Fig. 9.2, where the magnitudes of a ( j w ) and A(jw) are plotted versus frequency on log ) a

Gain magnitude dB

Figure 9.2 Gain magnitude versus frequency for the basic amplifier and the feedback amplifier.

626

Chapter 9

Frequency Response a n d Stability of Feedback Amplifiers jm

A s

Pole position for finite To

-

= U

(1 + To) p1

Oh,

plane

h

0

P1

Figure 9.3 Locus of the pole of the circuit of Fig. 9.1 as loop gain To varies.

scales. It is apparent that the gain curves for any value of To are contained in an envelope bounded by the curve of la(jw)l. Because the use of negative feedback allows the designer to trade gain for bandwidth, negative feedback is widely used as a method for designing broadband amplifiers. The gain reduction that occurs is made up by using additional gain stages, which in general are also feedback amplifiers. Let us now examine the effect of the feedback on the pole of the overall transfer function A(s). It is apparent from (9.3) that as the low-frequency loop gain To is increased, the magnitude of the pole of A(s) increases. This is illustrated in Fig. 9.3, which shows the locus of the pole of A(s) in the s plane as To varies. The pole starts at p1 for To = 0 and moves out along the negative real axis as To is made positive. Figure 9.3 is a simple root-locus diagram and will be discussed further in Section 9.5.

9.3 Instability and the Nyquist Criterion1 In the above simple example the basic amplifier was assumed to have a single-pole transfer function, and this situation is closely approximated in practice by internally compensated general-purpose op amps. However, many amplifiers have multipole transfer functions that cause deviations from the above results. The process of compensation overcomes these problems, as will be seen later. Consider an amplifier with a three-pole transfer function

where I p l 1 , lp21, and lp3 I are the pole magnitudes in radls. The poles are shown in the S plane in Fig. 9.4 and gain magnitude la(jw)l and phase ph a ( j o ) are plotted versus frequency in jw

1

s

plane

Figure 9.4

Poles of an amplifier

in the s plane.

9.3 Instability and the Nyquist Criterion

627

scale

scale

Figure 9.5 Gain and phase versus frequency for a circuit with

a three-pole transfer function. ,,X,$;wp f d l ( '

'

Fig. 9.5 assuming about a factor of 10 separation between the poles. Only asymptor-.VS are shown for the magnitude plot. At frequencies above the first pole magnitude Ipl l, the plot of Ja(jw)Jfalls at 6 dB/octave and ph a ( j o ) approaches -90". Above Ip21these become 12 dB/octave and - 180", and above Ip31they become 18 dBIoctave and -270". The frequency where ph a(jw) = - 180" has special significance and is marked w180, and the value of la(jw)l at this frequency is also. If the three poles are fairly widely separated (by a factor of 10 or more), the phase shifts at frequencies [pl1, Ip21, and Ip3( are approximately -45", - 135", and -225", respectively. This will now be assumed for simplicity. In addition, the gain magnitude will be assumed to follow the asymptotic cusve and the effect of these assumptions in practical cases will be considered later. Now consider this amplifier connected in a feedback loop as in Fig. 9.1 with f a positive constant. Since f is constant, the loop gain T(jw) = a(jw)f will have the same variation with frequency as a(jw). A plot of af ( j o ) = T(jw) in magnitude and phase on a polar plot (with w as a parameter) can thus be drawn using the data of Fig. 9.5 and the magnitude of f . Such a plot for this example is shown in Fig. 9.6 (not to scale) and is called a Nyquist diagram. The variable on the curve is frequency and varies from o = -a to w = a.For o = 0, (T(jo)l = To and ph T(jw) = 0, and the curve meets the real axis with an intercept To. As o increases, as Fig. 9.5 shows, ( a ( j o ) (decreases and ph a( jw) becomes negative and thus the plot is in the fourth quadrant. As w + m, ph a( j o ) + - 270" and (a(jo)l + 0. Consequently, the plot is asymptotic to the origin and is tangent to the imaginary axis. At the frequency 0 1 8 0 the phase is - 180" and the curve crosses the negative real axis. If la(jo 180) f l > 1 at this point, the Nyquist diagram will encircle the point (- 1,O) as shown, and this has particular significance, as will now become apparent. For

628

Chapter 9

Frequency Response a n d Stability of Feedback Amplifiers

w negative and increasing in magnitude

A

Re

Figure 9.6 Nyquist diagram [polar plot of T ( j w )in magnitude and phase] corresponding to the characteristic of Fig. 9.5 (not to scale).

the purposes of this treatment, the Nyquist criterion for stability of the amplifier can be stated as follows: "Consider a feedback amplifier with a stable T ( s )(i.e., all poles of T ( s ) are in the left half-plane). If the Nyquist plot of T (jw ) encircles the point (- 1, O),the feedback amplifier is unstable." This criterion simply amounts to a mathematical test for poles of transfer function A(s) in the right half-plane. If the Nyquist plot encircles the point (-1, O), the amplifier has poles in the right half-plane and the circuit will oscillate. In fact the number of encirclement~of the point (- l, 0) gives the number of right half-plane poles and in this example there are two. The significance of poles in the right half-plane can be seen by assuming that a circuit has a pair of complex poles at (al2 j w l ) where crl is positive. The transient response of the circuit then contains a term K1 exp a1 t sin o lt, which represents a growing sinusoid if a1 is positive. (K1 is a constant representing initial conditions.) This term is then present even if no further input is applied, and a circuit behaving in this way is said to be unstable or oscillatory. The significance of the point (- 1,O) can be appreciated if the Nyquist diagram is assumed to pass through this point. Then at the frequency w 180, T (jw ) = a( jw )f = - 1 and A ( j w ) = using (9.2) in the frequency domain. The feedback amplifier is thus calculated to have a forward gain of infinity, and this indicates the onset of instability and oscillation. This situation corresponds to poles of A(s) on the jw axis in the s plane. If To is then increased by increasing a0 or f , the Nyquist diagram expands linearly and then encircles (- 1,O). This corresponds to poles of A(s) in the right half-plane, as shown in Fig. 9.7. From the above criterion for stability, a simpler test can be derived that is useful in most common cases. "If IT( jw)l > 1 at the frequency where ph T ( j w ) = - 1 80•‹,then the amplifier is unstable." The validity of this criterion for the example considered here is apparent from inspection of Fig. 9.6 and application of the Nyquist criterion. In order to examine the effect of feedback on the stability of an amplifier, consider the three-pole amplifier with gain function given by (9.6) to be placed in a negative-feedback loop with f constant. The gain (in decibels) and phase of the amplifier are shown again in


629

Nyquist diagram passes through (-1, 0)when poles are here poles are here

Figure 9.7 Pole positions corresponding to different Nyquist diagrams.

Fig. 9.8, and also plotted is the quantity 2010glo l/f . The value of 2010glo 11f is approximately equal to the low-frequency gain in decibels with feedback applied since

and thus

log scale

Figure 9.8 Amplifier gain and phase versus frequency showing the phase margin.

630 Chapter 9

m

Frequency Response and Stability of Feedback Amplifiers

Consider the vertical distance between the curve of 2010glo la(jw)l and the line 20 log,, l1f in Fig. 9.8. Since the vertical scale is in decibels this quantity is

Thus the distance X is a direct measure in decibels of the loop-gain magnitude, IT( jw)l. The point where the curve of 2010glo la(jw)l intersects the line 2010glo l1f is the point where the loop-gain magnitude IT(jw)l is 0 dB or unity, and the curve of la(jw)l in decibels in Fig. 9.8 can thus be considered a curve of IT(jo)l in decibels fi the dotted line at 20 loglo l1f is taken as the new zero axis. The simple example of Section 9.1 showed that the gain curve versus frequency with feedback applied (2010glo I ~ ( j w ) lfollows ) the 20 logloA. line until it intersects the gain curve 20 loglo la(jo)l. At higher frequencies the curve 20 loglo IA(jo)l simply follows the curve of 20 loglo la(jw)l for the basic amplifier. The reason for this is now apparent in that at the higher frequencies the loop gain IT( j o ) ( + 0 and the feedback then has no inJEuence on the gain of the amplifier. Figure 9.8 shows that the loop-gain magnitude IT(jw)l is unity at frequency WO. At this frequency the phase of T(jw) has not reached - 180" for the case shown, and using the modified Nyquist criterion stated above we conclude that this feedback loop is stable. Obviously IT(jw)\ < 1 at the frequency where ph T(jw) = - 180". If the polar Nyquist diagram is sketched for this example, it does not encircle the point (- 1,O). As IT(jw)l is made closer to unity at the frequency where ph T(jw) = - 180", the amplifier has a smaller margin of stability, and this can be specified in two ways. The most common is the phase margin, which is defined as follows: Phase margin = 180•‹+(ph T(j o ) at frequency where IT( jw)l = 1). The phase margin is indicated in Fig. 9.8 and must be greater than 0" for stability. Another measure of stability is the gain margin. This is defined to be l/IT(jw)\ in decibels at the frequency where ph T(jw) = - 180•‹,and this must be greater than 0 dB for stability. The significance of the phase-margin magnitude is now explored. For the feedback amplifier considered in Section 9.1, where the basic amplifier has a single-pole response, the phase margin is obviously 90" if the low-frequency loop gain is reasonably large. This is illustrated in Fig. 9.9 and results in a very stable amplifier. A typical lower allowable limit for the phase margin in practice is 45", with a value of 60" being more common. Consider a feedback amplifier with a phase margin of 45" and a feedback function f that is real (and thus constant). Then where wo is the frequency defined by Now IT(jwo)l

=

Ja(jwo)f l = 1 implies that

assuming that f is positive real.


631

Figure 9.9 Gain and phase versus frequency for a single-pole basic amplifier showing the phase margin for a low-frequency loop gain To.

The overall gain is

Substitution of (9. 1l) and (9.12) in (9.14) gives

and thus

using (9.13). The frequency wo, where IT(jwo)l = 1, is the nominal - 3-dB point for a single-pole basic amplifier, but in this case there is 2.4 dB (1.3 X ) ofpeaking above the low-frequency gain of l/ f . Consider a phase margin of 60". At the frequency wo in this case and Following a similar analysis we obtain

In this case there is no peaking at w this frequency.

=

wo, but there has also been no gain reduction at

632

Chapter 9


Finally, the case where the phase margin is 90" can be similarly calculated. In this case and A similar analysis gives

As expected in this case, the gain at frequency wg is 3 dB below the midband value. These results are illustrated in Fig. 9.10, where the normalized overall gain versus frequency is shown for various phase margins. The plots are drawn assuming the response is dominated by the first two poles of the transfer function, except for the case of the 90" phase margin, which has one pole only. As the phase margin diminishes, the gain peak becomes larger until the gain approaches infinity and oscillation occurs for phase margin = 0". The gain peak usually occurs close to the frequency where IT(jw)l = 1, but for a phase margin of 60" there is 0.2 dB of peaking just below this frequency. Note that after the peak, the gain curves approach an asymptote of - 12 dB/octave for phase margins other than 90". This is because the open-loop gain falls at - 12 dB/octave due to the presence of two poles in the transfer function. The simple tests for stability of a feedback amplifier (i.e., positive phase and gain margins) can only be applied when the phase and gain margins are uniquely defined. The phase margin is uniquely defined if there is only one frequency at which the magnitude of the loop gain equals one. Similarly, the gain margin is uniquely defined if there is only one frequency at which the phase of the loop gain equals - 180". In most feedback circuits, these margins are uniquely defined. However, if either of these margins is not uniquely

Relative frequency

I -1 2 dEVoctave Figure 9.10 Normalized overall gain for feedback amplifiers versus normalized frequency for various phase margins. Frequency is normalized to the frequency where the loop gain is unity.

9.4 Compensation

633

defined, then stability should be checked using a Nyquist diagram and the Nyquist criterion. The loop gain T = a f can be examined to determine the stability of a feedback circuit, as explained in this section. Alternatively these measures of stability can be applied to the return ratio a, as explained in Appendix A9.1. Techniques for simulating and T = a f using SPICE have been developed, based on methods for measuring loop transmi~sion.~,' These techniques measure the loop transmission at the closed-loop dc operating point. An advantage of SPICE simulation of the loop transmission is that parasitics that might have an important effect are included. For example, parasitic capacitance at the op-amp input introduces frequency dependence in the feedback network in Fig. 8.24, which may degrade the phase margin.

9.4 Compensation 9.4.1 Theory of Compensation

Consider again the amplifier whose gain and phase is shown in Fig. 9.8. For the feedback circuit in which this was assumed to be connected, the forward gain was Ao, as shown in Fig. 9.8, and the phase margin was positive. Thus the circuit was stable. It is apparent, however, that if the amount of feedback is increased by making f larger (and thus A. smaller), oscillation will eventually occur. This is shown in Fig. 9.11, where fi is chosen to give a zero phase margin and the corresponding overall gain is A I = l/ f i . If the feedback

Figure 9.1 1 Gain and phase versus frequency for a three-pole basic amplifier. Feedback factor fi

gives a zero phase margin and factor

A gives a negative phase margin.

634

Chapter 9

W


-

is increased to f2 (and A2 l1f2 is the overall gain), the phase margin is negative and the circuit will oscillate. Thus if this amplifier is to be used in a feedback loop with loop gain larger than a. fi, efforts must be made to increase the phase margin. This process is known as compensation. Note that without compensation, the forward gain of the feedback amplifier cannot be made less than A1 = 11fl because of the oscillation problem. The simplest and most common method of compensation is to reduce the bandwidth of the amplifier (often called narrowbanding). That is, a dominant pole is deliberately introduced into the amplifier to force the phase shift to be less than - 180" when the loop gain is unity. This involves a direct sacrifice of the frequency capability of the amplifier. If f is constant, the most difficult case to compensate is f = l, which is a unity-gain feedback configuration. In this case the loop-gain curve is identical to the gain curve of the basic amplifier. Consider this situation and assume that the basic amplifier has the same characteristic as in Fig. 9.11. To compensate the amplifier, we introduce a new dominant pole with magnitude lpDl, as shown in Fig. 9.12, and assume that this does not affect the original amplifier poles with magnitudes Ipl 1, lp21, and ]p3).This is often not the case but is assumed here for purposes of illustration. The introduction of the dominant pole with magnitude ]pDl into the amplifier gain function causes the gain magnitude to decrease at 6 dB1octave until frequency [ p ll is reached, and over this region the amplifier phase shift asymptotes to -90'. If frequency lpDl is chosen so that the gain la(jw)l is unity at frequency lpll as shown, then the loop gain is also unity at frequency Ipll for the assumed case of unity feedback with f = 1. The phase margin in this case is then 45", which means that the amplifier is stable. The original amplifier would have been unstable in such a feedback connection.

Phase after / compensation

Figure 9.12 Gain and phase versus frequency for a three-pole basic amplifier. Compensation for unity-gain feedback operation (f = 1) is achieved by introduction of a negative real pole with magnitude I p D I.

9.4 Compensation 635

The price that has been paid for achieving stability in this case is that with the feedback removed, the basic amplifier has a unity-gain bandwidth of only Ipl I , which is much less than before. Also, with feedback applied, the loop gain now begins to decrease at a frequency /pD/,and all the benefits of feedback diminish as the loop gain decreases. For example, in Chapter 8 it was shown that shunt feedback at the input or output of an amplifier reduces the basic terminal impedance by [ l + T(jw)]. Since T ( j o ) is frequency dependent, the terminal impedance of a shunt-feedback amplifier will begin to rise when IT(jw)l begins to decrease. Thus the high-frequency terminal impedance will appear inductive, as in the case of zo for an emitter follower, which was calculated in Chapter 7. (See Problem 9.8.) EXAMPLE Calculate the dominant-pole magnitude required to give unity-gain compensation of the 702 op amp with a phase margin of 45". The low-frequency gain is a0 = 3600 and the ~ MHz. ) circuit has poles at -(p1/2n-) = l MHz, - (p212m-) = 4 MHz, and - ( ~ ~ 1 =2 40 In this example, the second pole p2 is sufficiently close to p1 to produce significant phase shift at the amplifier -3-dB frequency. The approach to this problem will be to use the approximate results developed above to obtain an initial estimate of the required dominant-pole magnitude and then to empirically adjust this estimate to obtain the required results. The results of Fig. 9.12 indicate that a dominant pole with magnitude lpDl should be introduced so that gain a0 = 3600 is reduced to unity at )pl/2.rrl = 1 MHz with a 6-dB1octave decrease as a function of frequency. The product lalw is constant where the slope of the gain-magnitude plot is -6 dB1octave; therefore

This would give a transfer function

where the pole magnitudes are in radians per second. Equation 9.21 gives a unity-gain frequency [where la(jw)l = l ] of 780 kHz. This is slightly below the design value of 1 MHz because the actual gain curve is 3 dB below the asymptote at the break frequency Ipl 1 . At 780 kHz the phase shift obtained from (9.21) is - 139" instead of the desired - 135" and this includes a contribution of - l l" from pole p2. Although this result is close enough for most purposes, a phase margin of precisely 45" can be achieved by empirically reducing lpDluntil (9.21) gives a phase shift of - 135" at the unity gain frequency. This occurs for IpD/2~= l 260 Hz, which gives a unity-gain frequency of 730 kHz. Consider now the performance of the amplifier whose characteristic is shown in Fig. 9.12 (with dominant pole magnitude lpDl) when used in a feedback loop with f < 1 (i.e., overall gain A. > 1). This case is shown in Fig. 9.13. The loop gain now falls to unity at frequency w, and the phase margin of the circuit is now approximately 90". The -3-dB bandwidth of the feedback circuit is U,. The circuit now has more compensation than is needed, and, in fact, bandwidth is being wasted. Thus, although it is convenient to compensate an amplifier for unity gain and then use it unchanged for other applications (as is done in many op amps), this procedure is quite wasteful of bandwidth. Fixed-gain amplifiers that are designed for applications where maximum bandwidth is required are usually

636 Chapter 9


W

1

log scale

-1 2 dB/octave

tI

I

-225" -270"

Phase margin

-

Figure 9.13 Gain and phase versus frequency for an amplifier compensated for use in a feedback loop with f = 1 and a phase margin of 45". The phase margin is shown for operation in a feedback loop with f < 1.

compensated for a specified phase margin (typically 45" to 60") at the required gain value. However, op amps are general-purpose circuits that are used with differing feedback networks with f values ranging from 0 to 1. Optimum bandwidth is achieved in such circuits if the compensation is tailored to the gain value required, and this approach gives much higher bandwidths for high gain values, as seen in Fig. 9.14. This figure shows compensation of the amplifier characteristic of Fig. 9.11 for operation in a feedback circuit with forward gain Ao. A dominant pole is added with magnitude Ipbl to give a phase margin of 45". Frequency lpbl is obviously >> IpD(,and the -3-dB bandwidth of the feedback amplifier is nominally Ipl l, at which frequency the loop gain is 0 dB (disregarding peaking). The - 3-dB frequency from Fig. 9.13 would be only w , = Ipl llAo if unity-gain compensation had been used. Obviously, since A. can be large, the improvement in bandwidth is significant. In the compensation schemes discussed above, an additional dominant pole was assumed to be added to the amplifier, and the original amplifier poles were assumed to be unaffected by this procedure. In terms of circuit bandwidth, a much more efficient way to compensate the amplifier is to add capacitance to the circuit in such a way that the original amplifier dominant pole magnitude [pll is reduced so that it performs the compensation function. This technique requires access to the internal nodes of the amplifier, and knowledge of the nodes in the circuit where added capacitance will reduce frequency [pll. Consider the effect of compensating for unity-gain operation the amplifier characteristic of Fig. 9.11 in this way. Again assume that higher frequency poles p2 and p3 are unaffected by this procedure. In fact, depending on the method of compensation, these

9,4 Compensation

637

Figure 9.14 Gain and phase versus frequency for an amplifier compensated for use in a feedback loop with f < 1 and a phase margin of 45". Compensation is achieved by adding a new pole p; to the amplifier.

poles are usually moved up or down in magnitude by the compensation. This point will be taken up later. Compensation of the amplifier by reducing Ipl ( is shown in Fig. 9.15. For a 45"-phase margin in a unity-gain feedback configuration, dominant pole magnitude ]p;l must cause the gain to fall to unity at frequency Ip21 (the second pole magnitude). Thus the nominal bandwidth in a unity-gain configuration is Ip21,and the loop gain is unity at this frequency. This result can be contrasted with a bandwidth of Ipl l, as shown in Fig. 9.12 for compensation achieved by adding another pole with magnitude lpDl to the amplifier. In practical amplifiers, frequency Ip2(is often 5 or 10 times frequency [ p ll and substantial improvements in bandwidth are thus achieved. The results of this section illustrate why the basic amplifier of a feedback circuit is usually designed with as few stages as possible. Each stage of gain inevitably adds more poles to the transfer function, complicating the compensation problem, particularly if a wide bandwidth is required.

9.4.2 Methods of Compensation In order to compensate a circuit by the common method of narrowbanding described above, it is necessary to add capacitance to create a dominant pole with the desired magnitude. One method of achieving this is shown in Fig. 9.16, which is a schematic of the first two stages of a simple amplifier. A large capacitor C is connected between the collectors of the input stage. The output stage, which is assumed relatively broadband, is not shown.

638

Chapter 9


log10 a0 -6 dB/octave I

Gain curve

!

\

W \

\

log scale \ \

j

l

iginal phase

i

I

compensation

-270" Figure 9.15 Gain and phase versus frequency for an amplifier compensated for use in a feedback loop with f = 1 and a phase margin o f 45".Compensation is achieved by reducing the magnitude I p l l of the dominant pole of the original amplifier.

A differential half-circuit of Fig. 9.16 is shown in Fig. 9.17, and it should be noted that the compensation capacitor is doubled in the half-circuit. The major contributions to the dominant pole of a circuit of this type (if Rs is not large) come from the input capacitance of Q4 and Miller capacitance associated with Q4. Thus the compensation as shown will reduce the magnitude of the dominant pole of the original amplifier so that it performs the required compensation function. Almost certainly, however, the higher frequency poles of the amplifier will also be changed by the addition of C. In practice, the best method +VC,

(1

To output stage

11

lI (1

II

l,

C 0 T

0

1

Figure 9.16 Compensation of an amplifier by introduction of a large capacitor C.

9.4 Compensation

Figure 9.17

639

Differential half-circuit of Fig. 9.16

of approaching the compensation design is to use computer simulation to determine the original pole positions. A first estimate of C is made on the assumption that the higher frequency poles do not change in magnitude and a new computer simulation is made with C included to check this assumption. Another estimate of C is then made on the basis of the new simulation, and this process usually converges after several iterations. The magnitude of the dominant pole of Fig. 9.17 can be estimated using zero-value time constant analysis. However, if the value of C required is very large, this capacitor will dominate and a good estimate of the dominant pole can be made by considering C only and ignoring other circuit capacitance. In that case the dominant-pole magnitude is

where and One disadvantage of the above method of compensation is that the value of C required is quite large (typically > 1000 pF) and cannot be realized on a monolithic chip. Many general-purpose op amps have unity-gain compensation included on the monolithic chip and require no further compensation from the user. (The sacrifice in bandwidth caused by this technique when using gain other than unity was described earlier.) In order to realize an internally compensated monolithic op amp, compensation must be achieved using capacitance less than about 50 pF. This can be achieved using Miller multiplication of the capacitance as shown in Fig. 9.18 for the 741 op amp. The 30-pF compensation capacitor is connected around the Darlington pair Ql6-Ql7 and produces a pole with magnitude 4.9 Hz, as shown in Chapter 7 using zero-value time constant analysis. The resulting gain and phase curves for the 741 are shown in Fig. 9.19. These curves were generated using the program SPICE and typical 741 device data. Use of these data shows that the unity-gain frequency is 1.25 MHz, the phase margin is 80", and the low-frequency gain is 108 dB. It should be pointed out that somewhat different performance is obtained from some commercial 741 circuits because of different integrated circuit processes giving different device parameters. As well as allowing use of a small capacitor that can be integrated on the monolithic chip, this type of compensation has another significant advantage. This is due to the phe. ~ illustrate pole splitting, the important poles and zeros of the nomenon of pole ~ p l i t t i n g To 741 as calculated by a computer program before and after compensation are plotted (not to scale) in Fig. 9.20. Before compensation, the circuit has two important low-frequency poles with magnitudes 18.9 kHz and 328 kHz. Computer simulations show that the

640 Chapter 9


Figure 9.18 Simplified schematic of the 741 op amp showing compensation by Miller effect using

a 30-pF capacitor connected around the Darlington pair QI6-Q17.

dominant pole with magnitude 18.9 kHz is produced largely by shunt capacitance at the base of QI6.Computer runs made with charge storage deleted in various parts of the circuit show that the pole with magnitude 328 kHz is also contributed by transistors QI6 and QI7. The rest of the poles and zeros come from various parts of the circuit, including input and output stages. Voltage gain, dB

t

120

Phase

I

\

Figure 9.19 Gain and phase versus frequency for the 741 op amp.

9.4 Compensation

641

16.4 MHz

X

L

3.9 MHz I I

s plane

I I

-15 MHz

"

1

-1 0 MHz

I I

I

X

j

-1 8.9 kHz

"l

A

X-

-2.7 MHz

-328 kHz

I

-1 6.4 MHz

y 21.7 MHz 16.9 MHz

s plane

I

-21.7 MHz

@)

Poles and zeros of the 741 op amp as calculated by computer. (a)Before compensation. (b) After compensation. (Not to scale.) Figure 9.20

After compensation, there is a dramatic change in the poles and zeros of the circuit, as shown in Fig. 9.20b. The amplifier now has a dominant pole with magnitude 5 Hz as desired, but an additional bonus has been gained because the original second-most-dominant pole with magnitude 328 kHz has been effectively removed. The second and higher most dominant poles now form a cluster with real magnitudes 10 to 15 MHz and include complex poles. Since the amplifier gain must be made to fall to unity at a frequency below the second-most-dominant pole magnitude (for adequate phase margin), the removal of the pole with magnitude 328 kHz has greatly increased the realizable bandwidth of the circuit. If this pole did not move, the compensation capacitor would have to be adjusted to cause the gain of the 741 to fall to unity at a frequency less than 328 kHz. The splitting of the two low-frequency poles of the 741 described above is a rather complex process involving other higher frequency poles and zeros in the Darlington pair.

642

Chapter 9


However, the process involved can be illustrated by assuming the Darlington pair is replaced by a single transistor. A similar pole-splitting process then occurs, as will now be illustrated. If the Darlington pair QI6-Ql7 of Fig. 9.18 is replaced by a single transistor, the transfer function of this stage can be calculated from the approximate equivalent circuit of Fig. 9.21. The stage is fed from a current i, out of the previous stage. Resistors RI and R2 represent total shunt resistance at input and output, including transistor input and output resistance, and Cl and C2 represent total shunt capacitance at input and output. Capacitor C represents transistor collector-base capacitance plus compensation capacitance. For the circuit of Fig. 9.21,

From (9.25) and (9.26)

v. is

-

( g m - CsW2R1 ~+S[(C~+C)R~+(C~+C)R~+~~R~R~C]+S~R~R~(C~C~

The circuit transfer function has a positive real zero at

which usually has such a large magnitude in bipolar circuits that it can be neglected. This is often not the case in MOS circuits because of their lower g,. This point is taken up later. The circuit has a two-pole transfer function. If p1 and p2 are the poles of the circuit, then the denominator of (9.27) can be written

and thus

if the poles are real and widely separated, which is usually true. Note that p1 is assumed to be the dominant pole.

Figure 9.21 Small-signal equivalent circuit of a single transistor stage. Feedback capacitor C includes compensation capacitance.

9.4 Compensation

643

If the coefficients in (9.27) and (9.30) are equated then

and this can be approximated by

since the Miller effect due to C will be dominant if C is large and gmRI, gmR2 >> 1. Equation 9.31 is the same result for the dominant pole as is obtained using zero-value time constant analysis. The nondominant pole p2 can now be estimated by equating coefficients of s2 in (9.27) and (9.30) and using (9.32).

Equation 9.32 indicates that the dominant-pole magnitude Ipl 1 decreases as C increases, whereas (9.33) shows that ) p 2 ]increases as C increases. Thus, increasing C causes the poles to split apart. As C becomes very much greater than Cl and C2, the value of Ip21 approaches gm/(C1+ C2), which is usually a relatively high frequency (tens or hundreds a, p2 -gm/(C2 + Cl). of MHz for typical parameter values). In the limit as C Since Fig. 9.21 has only two poles, this nondominant pole could be estimated using shortcircuit time constants, as described in Chapter 7. Assuming C is large and determines the dominant pole [as shown in (9.32)], then p2 can be estimated from the time constants for the other capacitors when C is shorted. With C shorted, Cl and C2 are connected in parallel and can be treated as a single capacitor. Also, the voltage that controls the g, generator (vl in Fig. 9.21) appears across the generator. Therefore, the generator acts like a resistance of value l/gm, which is in parallel with R2. Assuming llg, <SR2, the short-circuit time constant for Cl + C2 is r = (l/g,)(C1 + C2); therefore, (p21= 117 = g,/(C1 + C2). It is interesting to note that the poles of the circuit of Fig. 9.21 for C = 0 are

-

+

Thus as C increases from zero, the locus of the poles of the circuit of Fig. 9.21 is as shown in Fig. 9.22.

Poles split

1

S

plane

I

Figure 9.22 Locus of the poles of the circuit of Fig. 9.21 as C is increased from zero, for the case

-1IRlC1 > -1/R2C2.

644

Chapter 9


Another explanation of pole splitting is as follows. The circuit in Fig. 9.21 has two poles. The compensation capacitor across the second stage provides feedback and causes the second stage to act like an integrator. The two poles split apart as C increases. One pole moves to a low frequency (toward dc), and the other moves to a high frequency (toward -m) to approximate an ideal integrator, which has only one pole at dc. The previous calculations have shown how compensation of an amplifier by addition of a large Miller capacitance to a single transistor stage causes the nondominant pole to move to a much higher frequency. A similar process occurs in the 741 op amp and is the reason for the elimination of the pole with magnitude 328 kHz after compensation, as shown in Fig. 9.20. It is interesting to consider the performance attainable if the 741 is compensated by simply adding shunt capacitance to ground at the base of QI6 in Fig. 9.18. In order to achieve the same phase margin of 80" using the same device parameters, it was found by computer simulation that a compensation capacitance of 0.3 pF was required. This gave a dominant pole with magnitude 0.27 Hz and a unity-gain frequency of only 63 kHz. The second most dominant.pole had a magnitude 294 kHz. Thus very little movement of the second most dominant pole had occurred, and the change that did occur was a decrease in the pole magnitude. As a consequence, the realizable bandwidth of the circuit when compensated in this way is only 1/20 of that obtained with Miller effect compensation. The other disadvantage is that a capacitance of 0.3kF cannot be included on the monolithic chip. The effect of different methods of compensation described above can be seen in the circuit of Fig. 9.21. If Cl is made large in that circuit to produce a dominant pole, then - l/R1Cl. The nondominant pole can be the pole can be calculated from (9.31) as p1 estimated by equating coefficients of s2 in (9.27) and (9.30) and using this value of p]. This gives p2 = - 1/R2(C2+ C). This value of p2 is approximately the same as that given by (9.34b), which is for C = 0 and is before pole splitting occurs. Thus, creation of a dominant pole in the circuit of Fig. 9.21 by making Cl large will result in a second pole magnitude lpzl that is much smaller than that obtained if the dominant pole is created by increasing C . The same general trend is true in the more complex situation that exists in the 741 op amp. The results derived in this section are useful in further illuminating the considerations of Section 7.3.3. In that section, it was stated that in a common-source cascade, the existence of drain-gate capacitance tends to cause pole splitting and to produce a dominantpole situation. If the equivalent circuit of Fig. 9.21 is taken as a representative section of a cascade of common-source stages (C2 is the input capacitance of the following stage) and capacitor C is taken as Cgd,the calculations of this section show that the presence of Cgd does, in fact, tend to produce a dominant-pole situation because of the pole splitting that occurs. Thus, the zero-value time constant approach gives a good estimate of W - 3 d ~ in such circuits. The theory of compensation that was developed in this chapter was illustrated with some bipolar-transistor circuit examples. The theory applies in general to any active circuit, but the unique device parameters of MOSFETs cause some of the approximations that were made in the preceding analyses to become invalid. The special aspects of MOS amplifier compensation are now considered.

-

9.4.3 Two-Stage MOS Amplifier Compensation The basic two-stage CMOS op amp topology shown in Fig. 6.16 is essentially identical to its bipolar counterpart. As a consequence, the equivalent circuit of Fig. 9.21 can be used to represent the second stage with its compensation capacitance. The poles of the

9.4 Compensation

645

scale)

scale)

Figure 9.23 Typical gain and phase of the CMOS op amp of Fig. 6.16.

circuit are again given by (9.32) and (9.33) and the zero by (9.27a). In the case of the MOS transistor, however, the value of g, is typically an order of magnitude lower than for a bipolar transistor, and the break frequency caused by the right half-plane zero in (9.27) may actually fall below the nominal unity-gain frequency of the amplifier. The effect of this is shown in Fig. 9.23. At the frequency lzl the gain characteristic of the amplifier flattens out because of the contribution to the gain of +6 dB/octave from the zero. In the same region the phase is made 90" more negative by the positive real zero. As a consequence, the amplifier will have negative phase margin and be unstable when the influence of the next most dominant pole is felt. In effect, the zero halts the gain roll-off intended to stabilize the amplifier and simultaneously pushes the phase in the negative direction. Note also from (9.33) that the low g, of the MOSFET will tend to reduce the value of lp21 relative to a bipolar amplifier. Another way to view this problem is to note from Fig. 9.21 that at high frequencies, feedforward through C tends to overwhelm the normal gain path via g, of the second stage if g, is small. The feedforward path does not have the 180" phase shift of the normal gain stage, and thus the gain path loses an inverting stage. Any feedback applied around the overall amplifier will then be positive instead of negative feedback, resulting in oscillation. At very high frequencies, C acts like a short circuit diode-connecting the second stage, which then simply presents a resistive load of l/g, to the first stage, again showing the loss of 180"of phase shift. The right half-plane (RHP) zero is caused by the interaction of current from the g, generator and the frequency-dependent current that flows forward from the input node to

646

Chapter 9


the output node through C. The current through C in Fig. 9.21 is

This current can be broken into two parts: a feedback current if = sCv, that flows from the output back toward the input and a feedforward current iff = sCvl that flows forward from the input toward the output. This feedforward current is related to vl. The current g,vl from the controlled source flows out of the output node and is also related to vl. Subtracting these two currents gives the total current at the output node that is related to v1 : (9.36) i,, = ( g m - sC)vl A zero exists in the transfer function where this current equals zero, at z = g,/C. Three techniques have been used to eliminate the effect of the RHP zero. One approach is to put a source follower in series with the compensation c a p a ~ i t o ras , ~ shown in Fig. 9 . 2 4 ~The . source follower blocks feedforward current through C from reaching the output node and therefore eliminates the zero. This will be shown by analyzing Fig. 9.21 with C replaced by the model in Fig. 9.246. Here the source follower is modeled as an ideal voltage buffer. Equation 9.25 still holds because the same elements are connected to the input node and the voltage across C remains v , - vl. However, summing currents at the output node gives a different equation than (9.26) because no current flows through C to the output node due to the buffer. The new equation is

Combining this equation with (9.25) gives

The zero has been eliminated. Assuming g,R1, g,R2 >> 1 and C is large, the same steps that led from (9.27) to (9.32) and (9.33) give

P2

=

gmC -

(Cl

+ C)C2

rrr

gm -c 2

Figure 9.24 (a) Compensation capacitor C in Fig. 9.21 is replaced by C in series with a source follower. (b) A simple model for the capacitor and source follower.

9.4 Compensation

647

The dominant pole p1 is unchanged, and p2 is about the same as before if Cz >> C l . This approach eliminates the zero, but the follower requires extra devices and bias current. Also, the source follower has a nonzero dc voltage between its input and output. This voltage will affect the output voltage swing since the source-follower transistor must remain in the active region to maintain the desired feedback through C . A second approach to eliminate the RHP zero is to block the feedforward current This figure shows through C using a common-gate transistor, ' O as illustrated in Fig. 9.25~. a two-stage op amp, with the addition of two current sources of value I2 and transistor M l l . The compensation capacitor is connected from the op-amp output to the source of M l l . Here, common-gate M l l allows capacitor current to flow from the output back toward the input of the second stage. However, the impedance looking into the drain of M I 1 is very large. Therefore, feedforward current through C is very small. If the feedforward current is zero, the RHP zero is eliminated. A simplified small-signal model for the commongate stage and compensation capacitor is shown in Fig. 9.2%. Here common-gate M l l is modeled as an ideal current buffer. Replacing C in Fig. 9.21 with the model in Fig. 9.25b yields


+ Figure 9.25 (a)A two-stage CMOS op amp with common-gate M I 1connected to compensation capacitor C. (b) Simple small-signal model for M , , and C.

648 Chapter 9


The zero has been eliminated. Again assuming g,R1, gmR2 >> 1 and C is large, the poles are

The dominant pole is the same as before. However, the nondominant pole p2 is different. This p2 is at a higher frequency than in the two previous approaches because C >> C , when C and C2 are comparable. (In this section, we assume that the two-stage MOS op amp in Fig. 9.21 drives a load capacitor C2 that is much larger than parasitic capacitance Cl ;therefore C2 >> Cl .) Therefore, a smaller compensation capacitor C can be used here for a given load capacitance C2, when compared to the previous approaches. The increase in lpal arises because the input node is not connected to, and therefore is not loaded by, the compensation capacitor. An advantage of this scheme is that it provides better highfrequency negative-power-supply rejection than Miller compensation. (Power-supply rejection was introduced in Section 6.3.6.) With Miller compensation, C is connected from the gate to drain of M6, and it shorts the gate and drain at high frequencies. Assuming Vgs6 is approximately constant, high-frequency variations on the negative supply are coupled directly to the op-amp output. Connecting C to common-gate M l l eliminates this coupling path. Drawbacks of this approach are that extra devices and dc current are needed to . if there is a mismatch between the I2current implement the scheme in Fig. 9 . 2 5 ~Also, sources, the difference current must flow in the input stage, which disrupts the balance in the input stage and affects the input-offset voltage of the op amp. When the first stage of the op amp uses a cascode transistor, the compensation capacitor can be connected to the source of the cascode device as shown in Fig. 9.26." This connection reduces the feedforward current through C, when compared to connecting C to if the voltage swing at the source of the cascode device is smaller than the swing node at its drain. This approach eliminates the feedforward path, and therefore the zero, if the

m,

in-

4

--4

,

0

$\ -I

C II

l

11

-

+ss

Figure 9.26 A two-stage CMOS op amp with a cascoded current-mirror load in the input stage,

and with the compensation capacitor C connected to the cascode node.

9.4 Compensation

649

voltage swing at the source of the cascode device is zero. An advantage of this approach is that it avoids the extra devices, bias current, and mismatch problems in Fig. 9 . 2 5 ~ . A third way to deal with the RHP zero is to insert a resistor in series with the compensation capacitor, as shown in Fig. 9.27a.l2vl3 Rather than eliminate the feedforward current, the resistor modifies this current and allows the zero to be moved to infinity. If the zero moves to infinity, the total forward current at the output node that is related to v1 must go to zero when w m. When o m, capacitor C is a short circuit and therefore the feedforward current is only due to RZ: +

+

When this current is added to the current from the g, source, the total current at the output node that is related to v1 is

when o -t m. If Rz = llg,, this term vanishes, and the zero is at infinity. The complete transfer function can be found by carrying out an analysis similar to that performed for Fig. 9.21, which gives

where

-----__ -IncreasingRz

,/--0

/

/

M'

1

\

S

plane

/'

/'

1

X

R,>gm

X

Rz= 0

Figure 9.27 ( a ) Small-signal equivalent circuit of a compensation stage with nulling resistor. (bj Pole-zero diagram showing movement of the transmission zero for various values of Rz.

650

Chapter 9


Again assuming g,R1, gmR2>> 1 and C is large, the poles can be approximated by

The first two poles, p1 and p2, are the same as for the original circuit in Fig. 9.21. The third pole is at a very high frequency with lp31 >> lp21 because typically Cl > \p2)). Since the gain roll-off from Ipll to lp21is -6 dBIoctave, la(jw)( w is constant from [pl[ to IP21. Therefore, a0

IPII

=

1

(9.49)

1~21

where ao

= g m 1 (ro2llro4)gm6(ro6llro7) =

grnlRlgm6R2

is the dc gain of the op amp. Substitution of (9.47) and (9.50) into (9.49) gives

(9.50)

652

Chapter 9


The capacitance C2 at the output is dominated by the 5-pF load capacitance, and the internal parasitic capacitance Cl is much smaller than 5 pF (SPICE simulation gives Cl = 120 fF). Therefore Cl + C2 = 5 pF. From the example in Section 6.3.5, we find and Substituting these values into (9.5 1) and rearranging gives

To eliminate the zero due to feedforward through C, a resistor RZ of value l/gm6 = 645 fl can be connected in series with the compensation capacitor C. (In practice, this resistance should be implemented with an NMOS transistor that is a copy of M6 biased in the triode region, so that RZ = l/gm6.See Problem 9.23.) SPICE simulations (using models based on Table 2.4) of the op amp before and after compensation give the magnitude and phase plots shown in Fig. 9.29. Before compensation, the amplifier is unstable and has a phase margin of -6". After compensation with RZ = 645 R and C = 3.2 pF the phase margin improves to 41" with a unity-gain frequency of 35 MHz, and the gain margin is 15 dB. This phase margin is less than the desired 45". The simulated value of g,6 is 1.32 mA/V and differs somewhat from the calculated gm6,because the formulas used to calculate g, are based on square-law equations that are only approximately correct. Changing RZ to l/gm6(SPICE) = 758 gives a phase margin of 46" with a unity-gain frequency of 35 MHz, and the gain margin is 22 dB. Without RZ, the phase margin is 14", so eliminating the right-half-plane zero significantly improves the phase margin. Two earlier assumptions can be checked from SPICE simulations. First, Cl = 120 fF from SPICE and C2 = 5 pF; therefore, the assumption that Cl > lp21follows from Ip31= l/(RzC1) = gm6/C1,lpal = gm6/C2,and Cl l , the pole magnitude given by (9.119) is usually much larger than the zero magnitude. This will be assumed

+

678 Chapter 9

m


Figure 9.44 Root locus for the circuit of Fig. 9.41 assuming the basic amplifier contributes two poles to T ( s ) and the feedback circuit contributes one zero.

and the effects of the pole will be neglected, but if (RE + RF)IREbecomes comparable to unity, the pole will be important and must be included. The basic amplifier of Fig. 9.42 has two significant poles contributed by Ql and Q2. Although higher magnitude poles exist, these do not have a dominant influence and will be neglected. The effects of this assumption will be investigated later. The loop gain of the circuit of Fig. 9.41 thus contains two forward-path poles and a feedback zero, giving rise to the root locus of Fig. 9.44. For purposes of illustration, the two poles are assumed to be p1 = - 10 X 106 rads and p;! = -20 X 106 rads and the zero is z = -50 X 106 rad/s. For convenience in the calculations, the numbers will be normalized to 106 radls. Assume now that the loop gain of the circuit of Fig. 9.41 can be varied without changing the parameters of the basic amplifier of Fig. 9.42. Then a root locus can be plotted as the loop gain changes, and using rules 1 and 2 indicates that the root locus exists on the axis between p1 and p2, and to the left of z. The root locus must thus break away from the axis between p1 and p2 at a1 as shown, and return again at 02. One branch then extends to the right along the axis to end at the zero while the other branch heads toward infinity on the left. Using rule 6 gives

Solution of (9.120) for a1 gives

Obviously 01 = - 15.4 and the other value is cr2 = -84.6. Note that these points are equidistant from the zero, and, in fact, it can be shown that in this example the portion of the locus that is off the real axis is a circle centered on the zero. An aspect of the root-locus diagrams that is a useful aid in sketching the loci is apparent from Fig. 9.39 and Fig. 9.44. The locus tends to bend toward zeros as if attracted and tends to bend away from poles as if repelled. The effectiveness of the feedback zero in compensating the amplifier is apparent from Fig. 9.44. If we assume that the amplifier has poles p1 and p2 and there is no feedback zero, then when feedback is applied the amplifier poles will split out and move parallel poles to the j w axis. For practical values of loop gain To, this would result in "high

9.5 Root-LocusTechniques

679

Figure 9.45 Poles of the transfer function of the

feedback amplifier of Fig. 9.41. The transfer function contains no zeros.

near the j w axis, which would give rise to an excessively peaked response. In practice, oscillation can occur because higher magnitude poles do exist and these would tend to give a locus of the kind of Fig. 9.39, where the remote poles cause the locus to bend and enter the right half-plane. (Note that this behavior is consistent with the alternative approach of considering a diminished phase margin to be causing a peaked response and eventual instability.) The inclusion of the feedback zero, however, bends the locus away from the j w axis and allows the designer to position the poles in any desired region. An important point that should be stressed is that the root locus of Fig. 9.44 gives the poles of the feedback amplifier. The zero in that figure is a zero of loop gain T ( s )and thus must be included in the root locus. However, the zero is contributed by the feedback network and is not a zero of the overall feedback amplifier. As pointed out in Section 9.5.2, the zeros of the overall feedback amplifier are the zeros of basic amplifier a(s) and the poles of feedback network f ( S ) . Thus the transfer function of the overall feedback amplifier in this case has two poles and no zeros, as shown in Fig. 9.45, and the poles are assumed placed at 45"to the axis by appropriate choice of z. Since the feedback zero affects the root locus but does not appear as a zero of the overall amplifier, it has been called a phantom zero. On the other hand, if the zero z were contributed by the basic amplifier, the situation would be different. For the same zero, the root locus would be identical but the transfer function of the overall feedback amplifier would then include the zero as shown in Fig. 9.46. This zero would then have a significant effect on the amplifier characteristics. This point is made simply to illustrate the difference between forward path and feedbackpath zeros. There is no practical way to introduce a useful forward-path zero in this situation. Before leaving this subject, we mention the effect of higher magnitude poles on the root locus of Fig. 9.44, and this is illustrated in Fig. 9.47. A remote pole p3 will cause the locus to deviate from the original as shown and produce poles with a larger imaginary part than expected. The third pole, which is on the real axis, may also be significant in the final amplifier. Acceptable performance can usually be obtained by modifying the value of z from that calculated above. Finally, the results derived in this chapter explain the function of capacitors C p and CF in the circuit of the MC 1553 series-series triple of Fig. 8.21a, which was described in Chapter 8. Capacitor C p causes pole splitting to occur in stage Q2 and produces a dominant pole in the basic amplifier, which aids in the compensation. However, as described above, a large value of C p will cause significant loss of bandwidth in the amplifier, and so a feedback zero is introduced via C F ,which further aids in the compensation by moving the root locus away from the j w axis. The final design is a combination of two methods of compensation in an attempt to find an optimum solution.

680 Chapter 9


W

"., '. *.

s

plane

..

%

45".b' 7 *

W O

0'@

,'

Z

J

/' ,','

Figure 9.46 Poles and zeros of the transfer function of the feedback amplifier of Fig. 9.41 if the zero is assumed contributed by the basic amplifier.

Figure 9.47 Root locus of the circuit of Fig. 9.41 when an additional pole of the basic amplifier is included. (Not to scale.)

9.6 Slew Rate8 The previous sections of this chapter have been concerned with the small-signal behavior of feedback amplifiers at high frequencies. However, the behavior of feedback circuits with large input signals (either step inputs or sinusoidal signals) is also of interest, and the effect of frequency compensation on the large-signal, high-frequency performance of feedback amplifiers is now considered. 9.6.1 Origin of Slew-Rate Limitations

A common test of the high-frequency, large-signal performance of an amplifier is to apply a step input voltage from 0 to + S V as shown in Fig. 9.48. This figure shows an op amp in a unity-gain feedback configuration and will be used for purposes of illustration in this development. Suppose initially that the circuit operates linearly when this input is applied, and further that the circuit has a single-pole transfer function given by

9.6 Slew Rate

681

Figure 9.48 Circuit for testing slew-rate performance.

where

and f, is the -3-dB frequency. Since the circuit is connected as a voltage follower, the low-frequency gain A will be close to unity. If we assume that this is so, the response of the circuit to this step input [Vi(s)= 5/s] is given by 1

3 v T . For a MOS differential pair, II,I 211 if 1 vid1 > ,,~IV,,,~1 . (See Chapter 3.) Thus, when Vid = 5 V as described above, the input stage limits and I, 211 (assuming that , , ~ I v ,I , -0.6 V. (c) Equivalent circuit for Vi, < -0.6 V. (d) dc transfer characteristic. ( e ) Re-

sponse to sinusoidal input.

waveform as shown in Fig. 10.1. In many signal-processing applications this error would be too large to be acceptable. The performance of the rectifier can be greatly enhanced by the addition of active elements. Consider the active rectifier of Fig. 10.3. The diode has been replaced by a subcircuit consisting of a diode together with an operational amplifier with a gain a. We first consider the I-V characteristic of the diode op amp combination. If we assume that the op amp is ideal, then the current into its input terminals is zero and all of the current (I) flows through the diode and into the output terminal of the op amp. The forward drop in the diode is equal to the difference between the op amp input voltage V iand the op amp output voltage V,, so that the diode current I is

The op amp has a gain a, so that V, = -aV; Note that the output voltage of the circuit VOutis not the output voltage of the op amp V,. The output of the op amp serves only to drive the diode. The output voltage of the circuit is equal to the input voltage of the op amp. For the case in which the diode is forward biased, this voltage can be found by combining (10.1) and (10.2):

10.2 Precision Rectification

705

Notice that the forward voltage drop is reduced by a factor (a + 1) compared with the diode alone. Since a voltage gain a of many thousands is readily obtained in an op amp, the factor that determines the forward drop in the circuit will actually be the input offset voltage of the op amp itself. When the input voltage is made positive, the op amp drives the diode into the reversebiased state, and the behavior of the circuit is not well described by (10.3). Because of the presence of the diode, no current larger than the reverse leakage current of the diode can flow into the composite device. Thus, when the input voltage of Fig. 10.3 becomes positive, no current flows in the resistor and op amp input voltage Vi becomes equal to Vin. This causes the output voltage of the op amp to be driven in the negative direction until the output stage saturates. Thus, for positive input voltages, input voltage Vin is applied directly across the op amp input terminals and the amplifier saturates. The dc transfer characteristic of the rectifier of Fig. 1 0 . 3 is ~ shown in Fig. 10.3b. Note that the curve closely approaches that of an ideal rectifier. Improved Precision Half-Wave Rectifier. The rectifier circuit of Fig. 10.3 has the property that for positive inputs the operational amplifier output saturates in the negative direction. As illustrated in Fig. 10.3c, the op-amp output voltage is required to change instantaneously from this saturated voltagp, (V,-) to +0.6 V when the input waveform passes through zero. Because of the limited slew rate of real operational amplifiers (see Chapter 9), this cannot occur, and the output waveform will not be a precisely rectified version of the input waveform as the frequency of the input sinusoid is increased. An alternate circuit that greatly alleviates this problem is shown in Fig. 10.4. This circuit is similar to the original one except that one additional diode D 2and one additional resistor are added. For input voltages less than zero, operation of the circuit is exactly the same as the circuit of Fig. 10.3. The equivalent circuit for this condition is shown in Fig. 10.4b. Diode D 1is forward biased and the op amp is in the active region. The inverting input of the op amp is clamped at ground by the feedback through D1, and, since no current flows in R2, the output voItage is also at ground. When the input voltage is made positive, no current can flow in the reverse direction through D 1so the output voltage of the op amp V, is driven in the negative direction. This reverse biases D 1and forward biases D2. The resulting equivalent circuit is shown in Fig. 1 0 . 4 ~and is simply an inverting amplifier with a forward-biased diode in series with the output lead of the op amp. Because of the

Figure 10.3 Active precision halfwave rectifier. (a)Rectifier circuit.

706 Chapter 10 a Nonlinear Analog Circuits "out

Figure 10.3 ( b )dc transfer characteristic. The output voltage for Via< 0 is in the microvolt range if the op amp has no offset. (c) Input and output waveforms for the precision half-wave rectifier. V, is output voltage of the op amp. During the positive excursions of the input, V, takes on the value of V ; , which is the output voltage at which the op amp output stage saturates.

10.2 Precision Rectification 707

R2 o+

Vin

"out

(4 Figure 10.4 Improved precision rectifier. (a)Rectifier circuit. (b) Equivalent circuit for Vi,

< 0.

(c)Equivalent circuit for Vi, > 0.

large gain of the op amp, this diode has no effect on its behavior as long as it is forward biased, and so the circuit behaves as an inverting amplifier giving an output voltage of

As shown in Fig. 10.5, the output voltage of the operational amplifier need only change in value by approximately two diode drops when the input signal changes from positive to negative. Actually, this is but one of a wide variety of active-rectifier circuits, some of which are capable of even faster operation.'

708 Chapter 10

Nonlinear Analog Circuits

Figure 10.5 Waveforms within the improved precision rectifier for a sinusoidal input.

10.3 Analog Multipliers Employing the Bipolar Transistor In analog-signal processing the need often arises for a circuit that takes two analog inputs and produces an output proportional to their product. Such circuits are termed analog multipliers. In the following sections we examine several analog multipliers that depend on the exponential transfer function of bipolar transistors.

10.3.1 The Emitter-Coupled Pair as a'Simple Multiplier The emitter-coupled pair, shown in Fig. 10.6, was shown in Chapter 3 to produce output currents that are related to the differential input voltage by

10.3 Analog Multipliers Employing the Bipolar Transistor

709

Figure 10.6 Emitter-coupled pair.

where base current has been neglected. Equations 10.5 and 10.6 can be combined to give the difference between the two output currents:

AIc

=

(2)

Icl - lC2 = IEE tanh -

This relationship is plotted in Fig. 10.7 and shows that the emitter-coupled pair by itself can be used as a primitive multiplier. We first assume that the differential input voltage Vidis much less than VT. If this is true, we can utilize the approximation tanh- V i d 2vT

Vid -2vr

2vr

-vss + V G S ~+ vtl EXAMPLE Modify the single-ended two-stage op amp from the examples in Section 6.3.5 and Section 9.4.3 into a fully differential op amp. It will be used in the feedback circuit shown in Fig. 12.25, which represents the connections in a switched-capacitor circuit when one clock is high (assuming the switches are ideal). The capacitor values are CS = 2 pF, CF = 5 pF, and CL = 2 pF. Design for l-V peak output swing and phase margins of 45" or greater in the DM and CMFB loops. Use VDD = Vss = 1.65 V, and design for a CM output voltage of 0 V. ll Cl,

+ V",

"sd

v02

-

-

CF

Figure 12.25. A fully differential op amp with capacitive load and feedback.

840 Chapter 12 or V,,

=

Fully Differential Operational Amplifiers

0.35 V for M21-M24.From (1. l V ) , we get

The only remaining device sizes to be determined are for matched transistors M26 and M27.Each device acts as a current source carrying 200kA. For those transistors to act as current sources, they should always be active. Focusing on M26, we want Vov26< Vds26(min). TOdetermine Vds26(min), consider an extreme case when M21just turns off as VO1swings down to its lowest value. In this case, carries 200 pA, and

The gate voltage of is VCM= 0. Therefore, the minimum source-body voltage for M22, which is the minimum drain-source voltage of M26, is

Since Vsb22is not zero, the threshold voltage of

is given by (1.140) as

l = 0.33 V and y = Using the data in Table 2.4, (1.141), and (2.28), we calculate 0.28 [assuming Vsb22is small and using NA + Nsi as the effective substrate doping in (1.14l)I. Solving (12.82) and (12.83) gives VtZ2= 0.67 V, Vs22(min)= - 1.17 V, and If we chose Vov26= 0.38 V (to allow for a -0.1 V shift in VCM),then

Also, (WIL)27 = 14 since and MZ7are matched. In the example in Section 9.4.3, a compensation capacitor of 3.2 pF provided a 45" phase margin for a feedback factor of unity and a 5-pF load. The DM half-circuits for this example with the independent voltage sources Vsl and Vs2 set to zero are shown in Fig. 12.27~.Here, we have assumed that CL is much larger than the input capacitance of the CM-sense devices M21-M24.The two feedback networks connect between the two halfcircuits in this negative feedback circuit. The feedback factor is less than one because it is set by the capacitive divider formed by CF and CS.Also, the feedback networks affect the capacitive loading at the outputs. The upper DM half-circuit in Fig. 12.27a is redrawn in Fig. 12.27b with the feedback loop broken. Here, capacitor Cidhis the capacitance looking into the gate of M 1 in the DM half-circuit, which is the same as the capacitance looking into the gate of M2. Looking into the gate of M2, we see Cgs2and overlap capacitance CgdZ increased by the Miller effect as in (7.5); therefore,

=

Z3 j i . r apm2 R ) ( i i prn)(O.82 pm) + 0.35( P

3

(77 pm)(i

+ 137) = 3.9 pP

12.6 Fully Differential Op Amps

841

II

C

+ CS

Y,d 2

+ - -"id 2 0

ro 4

-

-

0

(b)

Figure 12.27. (a)The DM half-circuits for Figs. 12.25 and 12.26. (b)The upper DM half-circuit in (a) with the feedback loop broken.

Here, we used L2 = 1 p m - 2Ld = 0.82 pm and adml = -gm2(ro2((ro4)= - 137 for the low-frequency gain of the first stage. These values follow from the example in Section 6.3.5. The total capacitive load from the output to ground in the DM half-circuit is

Here, we have assumed that CL is much larger than the junction capacitance and other parasitic capacitances at the op-amp output. The DM feedback factor is

842

Chapter 12

Fully Differential Operational Amplifiers

Substituting (12.84), (12.85), and values for gm2 = gml and gm6 from the example in Section 9.4.3 into (12.74),we have

This compensation capacitor gives a 45" phase margin in the DM half-circuit (ignoring the right-half-plane zero).

f

M5h

\

C

Vir

-

II tF

,l

' 0

4

,p CL-

,V ,

CM half-circuit for CM sense

-

Other CM half-circuit for op amp (M,, M, ... M,)

for CM sense

CM half-circuit for CM sense

I

half of M,

1

- M27

Figure 12.28. (a)The CM half-circuits for Figs. 12.25 and 12.26. (b) The upper CM half-circuit

in (a) simplified.

12.6 Fully Differential Op Amps

*

Vcmc

C

-

II *1 r0

-

4

843

v,,

, - CM half-circuit for CM sense

-

5". -

(4 Figure 12.28. (c) The CM half-circuit in (b),focusing on the CMFB loop (loop # 1).

The CM half-circuits are shown in Fig. 1 2 . 2 8 ~with the source voltages Vsl and VS2 set to zero. Only the upper CM half-circuit is shown in detail. The capacitive feedback networks connect between the two CM half-circuits. A simplified drawing of the upper CM half-circuit is shown in Fig. 12.28b. The key simplification here is that capacitor CF, which was connected to the input of the lower CM half-circuit (which is the gate of M1) in Fig. 12.28a, now connects to the gate of M2. This change does not affect the CM analysis because the elements and signals in the two CM half-circuits are identical. In the CM half-circuit in Fig. 12.28b, there are two feedback loops. One loop is the CMFB loop that includes the CM-sense block. We will refer to this loop as loop # l . This loop is a negative feedback loop, since there are three inverting stages in the loop: actively loaded common-source stages MSh and M6, and the inverting CM-sense circuit. The magnitude of the low-frequency gain in this loop is large because each common-source stage provides significant voltage gain. The other feedback loop goes through the op amp from vi, to v,, and then back from v,, to the input vi, through the capacitive divider formed by CF and CS,and it will be called loop #2. Here, loop #2 is a positive feedback loop because it contains two inverting gain stages. This feedback loop is stable, however, because the loop gain in loop #2, which is the product of the forward gain a:, and the feedback factor through the capacitive divider, has a magnitude that is less than one at all frequencies. The forward gain a;, in this loop, which is a:, = v0,Ivi, with the CMFB (loop # 1) active, has a magnitude that is less than unity due to the presence of the CMFB loop (loop #l), which works to force v,, = 0. (See Problem 12.27.) To explain this low gain, first consider the CM half-circuit with loop # l disabled. In this case, if vi, is nonzero, Id2 changes, which changes Vgs6 and produces a nonzero v,,. When the CMFB loop # l is enabled, this loop senses any nonzero v,, and adjusts V,, to produce a change in Id5 that counteracts the change in Id2 to give v,, = 0. The magnitude responses of the loop gains for these two loops are plotted in Fig. 12.29, ignoring any zeros and poles other than the dominant and nondominant poles, p , , and pz,, associated with the Miller-compensated gain stage in Fig. 12.28b. Here, loop # 1 is assumed to be compensated so that its unity-gain frequency is equal to 1 ~ 2 ~which 1, gives a 45"phase margin. Since loop #2 is stable, we need only focus on the stability and compensation of the high-gain CMFB loop (loop # 1). This CMFB loop is shown in Fig. 12.28~.Here, the lumped load capacitance C2, includes the output loading due to CL and the capacitive feedback network, including the capacitance Cichlooking into the gate of M2 in Fig. 12.28b. This capacitance is smaller than Cidhbecause M2 has a large source degeneration resistance (ro5h)that provides local CM feedback. This feedback increases the impedance (decreases the capacitance) looking into the gate of M2. Also, this feedback reduces the magnitude of the voltage gain from the

844

Chapter 12 m Fully Differential Operational Amplifiers

Figure 42.29. Plots of the loop gains for the two feedback loops in the CM half-circuit in Fig. 12.286.

gate to the drain of M2, which decreases the Miller input capacitance due to Cgd2.Therefore, assuming Cich

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